JP2007027339A - Plasma processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum processing device capable of improving a yield of processing. <P>SOLUTION: The vacuum processing device comprises a processing chamber 207 arranged in a vacuum vessel wherein plasma is formed inside, a sample stand 212 whereby a sample for processing is laid in the upper surface arranged at the lower part in this processing chamber, a plate 208 having a guide hole for introducing processing gas into this processing chamber arranged above the processing chamber 207, a conveyance container 218 whereby a sample for processing is conveyed in a decompressed inside connected with the vacuum vessel 202, and a gate valve 217 whereby a passage intercommunicating the inside of this conveyance container 218 and the inside of the vacuum vessel is opened and closed. While introducing a predetermined gas from the guide hole in a vacuum vessel after adjusting the pressure in a conveyance container almost equal to the pressure in this vacuum vessel, the gate valve 217 is opened so that the sample is conveyed between the vacuum vessel 202 and the vacuum conveyance container 218. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a vacuum processing apparatus provided with a processing container for forming a plasma inside a decompressed vacuum container and processing a sample arranged in the container, and a sample transport container connected to the vacuum container and a vacuum The present invention relates to a vacuum processing apparatus having a valve for opening and closing each internal communication with a container.

  In such a vacuum processing apparatus, a sample such as a semiconductor wafer is processed using plasma formed by supplying an electric field or a magnetic field to a processing gas supplied into the processing container having a vacuum container. It is. In addition, the inside of the vacuum vessel constituting the processing vessel is depressurized to form plasma, but if the sample is placed in the vessel at atmospheric pressure and then the vessel is depressurized to process the sample, It is difficult and time-consuming to set the inside and the sample to conditions suitable for processing. For this reason, another vacuum vessel such as a load lock (unload lock) chamber in which the internal pressure can be varied between atmospheric pressure and a predetermined reduced pressure while the sample is held inside, or a reduced pressure state. A configuration in which a vacuum transfer container, which is another vacuum container in which a transfer device such as a robot arm for transferring a sample is arranged, is connected to the processing container is employed.

  Furthermore, a load lock chamber, an unload lock chamber, and a plurality of processing containers arranged according to different required processes are arranged around a vacuum transfer container having a transfer device inside, and these are connected, and the load lock chamber A device that improves the efficiency of sample processing is known in which a sample is exchanged with each processing container through an atmospheric transfer chamber under atmospheric pressure connected to an unload lock chamber.

  In these vacuum processing equipment, after the sample in the cassette at atmospheric pressure is transferred from the atmospheric transfer chamber to the load lock chamber, the valve that opens and closes the opening is closed to transfer the pressure in the load lock chamber to the vacuum. The pressure is reduced to a pressure substantially equal to the pressure in the container or the processing container. After depressurization, the valve on the vacuum transfer container side is opened, and the sample is taken out by the robot arm in the processing container, transferred, and placed on the sample stage in the processing container. After the valve for opening and closing the communication between the processing container and the vacuum transfer container is closed and the sample is processed in the vacuum container, the valve is opened and the sample is taken out by the robot arm. Thereafter, the sample is transported to another processing container for another processing, or returned to the cassette through the reverse path.

  Thus, when a sample is conveyed under the pressure reduced between the several containers of a vacuum processing apparatus, the communication between these is opened and closed using the valve | bulb arrange | positioned between each container. If the pressures in the containers on both sides of the valve before opening the valve are not equal, a gas flow will occur from the high pressure side container to the low side container when the valve is opened. In such a vacuum processing apparatus, a processing gas having corrosiveness is included in the gas in the container, and the corrosive gas is transported to the inside of the other container or the sample surface by the flow of these gases. There was a risk of adverse effects.

  In order to solve such a problem, there has been considered a technique of opening the valve after appropriately adjusting the pressure in the containers on both sides of the valve before opening the valve.

  As an example of such a prior art, the thing disclosed by Unexamined-Japanese-Patent No. 7-211761 (patent document) is known. In this prior art, a plurality of processing chambers for processing an object to be processed and a load lock chamber for loading / unloading the object to / from the outside are connected to a common transfer chamber. In addition to the workpiece transport path that communicates with each other, a bypass path that connects them and an on-off valve provided on the bypass path, the gas in the common transport chamber is allowed to flow to another room through the bypass path, and After the pressure is made equal to or slightly lower than the pressure in the common transfer chamber, the valve is opened. With this configuration, when the valve is opened to communicate with each other, gas flows into the other transfer chamber in the common transfer chamber, for example, the corrosive gas remaining in the processing chamber is prevented from flowing into the common transfer chamber. Is.

Japanese Patent Laid-Open No. 7-211761

  The above-described prior art is intended to prevent gas from other chambers from flowing into the transfer chamber when a valve that opens and closes between the transfer chamber and the other chamber is opened. However, since the following points have not been fully considered, problems have occurred.

  That is, the substance in the connected chamber, for example, the processing chamber moves in the direction of the sample due to the gas flow from the common transfer chamber flowing into the communicated chamber with the valve opened. In the above prior art, since the pressure difference between the two chambers is about 99 mTorr, it is described that there is no rolling up of particles or the like, but in actuality, the product adhered to the surface inside the processing chamber or near the surface There has been a problem that the staying product rides on the gas flow and reaches the sample stage and adheres to the sample surface as a foreign substance. For this reason, the prior art has not taken into account the problem that the yield of processing is impaired.

  Further, in the above prior art, a bypass path that connects two connected chambers is provided, and the pressure difference is adjusted to a predetermined value by the flow path resistance when gas passes through the bypass path. In such a configuration, it takes a long time to adjust the pressure difference as desired, and it takes a long time to transport the sample. In particular, the problem that it takes time until the sample is taken out of the processing chamber after the processing of the sample is finished, and the efficiency of the processing is impaired, has not been considered.

  An object of the present invention is to provide a vacuum processing apparatus with improved processing yield.

  Another object of the present invention is to provide a vacuum processing apparatus with improved processing efficiency.

  The above-described object is to provide a processing chamber in which a plasma is formed inside a vacuum vessel, a sample stage disposed in the lower part of the processing chamber and on which a sample to be processed is placed, and above the processing chamber. A plate having an introduction hole for introducing a processing gas into the processing chamber, a transport container in which the sample to be processed is transported through the reduced pressure connected to the vacuum container, and the transport A gate valve that opens and closes a passage that communicates the inside of the container and the inside of the vacuum container, and introduces a predetermined gas from the introduction hole into the vacuum container while the pressure in the vacuum container This is achieved by a vacuum processing apparatus which opens the gate valve after adjusting the pressure to be approximately equal and transfers the sample between the vacuum container and the vacuum transfer container.

  In addition, a processing chamber disposed in a vacuum vessel and generating plasma therein, a sample stage disposed in a lower portion of the processing chamber and on which a sample to be processed is placed, and the vacuum vessel are connected. A transport container for transporting the sample to be processed through the decompressed interior; and a gate valve for opening and closing a passage communicating between the interior of the transport container and the interior of the vacuum container. The pressure in the processing chamber and the pressure in the transfer container are adjusted to be approximately equal while introducing a predetermined gas from a hole disposed at a position facing the substrate, and then the gate valve is opened to remove the sample from the vacuum container. And a vacuum processing apparatus for transporting between the vacuum transport container.

  Furthermore, the vacuum container is achieved by being detachably connected to the vacuum transfer container. Furthermore, the predetermined gas is achieved by being an inert gas. Furthermore, after processing the sample, the pressure is once reduced to a low pressure, the pressure in the processing chamber and the pressure in the transfer container are adjusted to be approximately equal while introducing the predetermined gas, and then the gate valve is opened. This is accomplished by unloading the sample from the vacuum vessel.

  A first embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 is a top view showing an outline of a configuration of a vacuum processing apparatus according to a first embodiment of the present invention.

  In this figure, the vacuum processing apparatus 100 according to the present embodiment is broadly divided into a vacuum side block 101 on the lower side of the figure and an atmosphere side block 102 on the lower side of the figure.

  The atmosphere-side block 102 has a plurality of mounting tables on which upper surfaces of cassettes 109 that can store a plurality of substrates such as semiconductor wafers to be processed in the vacuum processing apparatus 100 are stored. This is provided with one or more atmospheric transfer containers 108 mounted on the front side of the apparatus, which is the lower side in the figure. Inside the atmospheric transfer container 108, a transfer chamber that is a space in which the sample in the cassette 109 is transferred is arranged. As in this embodiment, a dummy cassette 110 for storing dummy wafers may be disposed adjacent to the two cassettes 109.

  The vacuum side block 101 is provided on the side wall corresponding to each side of the polygon of the vacuum transfer container 112 arranged in the center and the vacuum transfer container 112 having a substantially polygonal shape (substantially hexagonal in the present embodiment). And a plurality of vacuum vessels attached and connected thereto.

That is, the etching processing container portions 103a and 103a ′ each having two vacuum processing chambers on the two upper side walls (the rear side of the apparatus) of the vacuum transfer container 112, each having a processing chamber in which a sample is etched. Also, etching processing units 103 and 103 ′ are provided that include beds 103 b and 103 b ′ which are disposed below and house the equipment necessary for the operation of the vacuum vessel and the etching processing in the processing chamber inside thereof. Further, an ashing processing container portion including a vacuum container having a processing chamber in which a sample is ashed (ashed) inside each of two side walls of the vacuum transfer container 112 on the left and right sides (the left and right sides of the apparatus). Ashing processing units 104 and 104 ′ including 104a and 104a ′ and the vacuum containers and ashing processing beds 104b and 104b ′ are arranged.

  Further, a load lock chamber or an unload lock, which is a vacuum container for exchanging samples between these containers, is attached to and connected to the side walls between the atmospheric transfer container 108 and the vacuum transfer container 112. Chambers 113 and 113 'are arranged. In the present embodiment, these are both high-vacuum pressures and atmospheric transfer containers 108, each of which has an unprocessed or processed sample placed therein, and is approximately equal to the pressure in the vacuum container in each processing unit or vacuum transfer container 112. It is configured to be able to be adjusted to a predetermined value by changing the pressure with respect to the substantially atmospheric pressure. With this configuration, the sample can be exchanged between the atmosphere side block 102 and the vacuum side block 101 from one side to the other side or vice versa.

  The load lock chambers or unload lock chambers 113 and 113 ′ have functions equivalent to those of both companies, and whether to transport the sample in one direction or in both directions is appropriately determined according to the specifications. In the following, both are simply referred to as a load lock chamber.

  In the vacuum processing apparatus 100 having such a configuration, a sample such as a semiconductor wafer to be processed stored in the cassette 109 is taken from the cassette 109 by a robot arm (not shown) disposed in the transfer chamber in the atmospheric transfer container 108. It is taken out and transferred, and is transferred to one of the load lock chambers 113 (or 113 ') through an opening formed in the side wall of the atmospheric transfer container 108, and placed on a sample table (not shown) disposed inside these. Placed.

  After the opening is closed and sealed, the inside of the load lock chamber 113 is evacuated to reduce the internal pressure to a predetermined pressure substantially equal to the pressure in the vacuum transfer container 112. After confirming that the pressure has reached a predetermined pressure, the opening on the side of the vacuum transfer container 112 is opened, and a robot arm (not shown) arranged in the vacuum transfer container 112 takes out the sample on the sample table in the load lock chamber 113. The inside of the transfer chamber in the vacuum transfer container 112 is transferred and moved into one of the processing units, for example, the processing chamber in the vacuum container of the etching processing unit 103. The sample transported into the vacuum vessel is placed on a sample stage in the vacuum vessel. After the opening that connects the inside of the vacuum container of the etching processing unit 103 and the transfer chamber in the vacuum transfer container 112 is closed by an opening / closing device such as a gate valve, the sample is etched in the vacuum container.

  After the etching process is completed, the opening is opened, and the sample is transported in the reverse order or direction as described above, or is transported into the ashing processing unit 104 (or 104 ′) and subjected to the ashing process, and then vacuum transported. The container 112 is transported and stored in the original cassette 109 through the load lock chamber 113 (or 113 ′) and the atmospheric transport chamber in the atmospheric transport container 108.

  The configuration of the vacuum processing apparatus according to the present invention will be described in detail with reference to FIG. FIG. 2 is a vertical cross-sectional view schematically showing an outline of a configuration of a processing vessel that is a vacuum vessel of the vacuum processing apparatus shown in FIG. 1 and its surroundings. In particular, this figure shows the configuration of the processing container portion 103a of the etching processing unit 103 shown in FIG.

  In this figure, as described above, the etching processing unit 103 is roughly divided into two in the vertical direction, the upper part is a processing container part 103a including a vacuum container and a processing chamber inside thereof, the lower part is a vacuum container, the operation of the processing chamber, It is a bed 103b (not shown) for storing equipment required for processing.

The processing unit 103a is connected to and supported by the bed 103b and the vacuum transfer container 112 above the bed 103b. In the present embodiment, the bed 103b has a substantially rectangular parallelepiped shape as in the other processing units. Thus, an operator can get on the processing container portion 103a and perform the operation easily when performing the operation such as maintenance.

  The processing container portion 103a includes processing containers 201 and 202, which are vacuum containers, and an electromagnetic wave supply device disposed on the side and upper sides of the processing container 201. A radio wave source 203 that forms a radio wave in the UHF band and a waveguide means 204 such as a coaxial cable connected thereto are disposed above the processing vessel 201 and a plate-like lid member 205 that forms the upper portion of the processing vessel 201. Yes.

  The lid member 205 has a disk-shaped antenna 205a at the upper part thereof, and a dielectric plate that constitutes the lid member 205 by arranging the antenna 205a to which the waveguide means 204 is connected to transmit the radio wave. Radio waves are introduced into the processing chamber 207 and the vacuum chamber 216 disposed inside the processing vessels 201 and 202 via the members. Further, a magnetic field generated by a solenoid coil 206 disposed around the processing vessel 201 and a part of the waveguide unit 204 above the processing vessel 201 is supplied into the processing chamber 207 and the vacuum chamber 216.

A shower plate 208 is disposed below the lid member 205 and facing the inside of the processing chamber 207 with a predetermined gap between the shower plate 208 and the shower plate 208. A plurality of holes communicating with the inside of the processing chamber 207 are arranged, and these holes serve as gas introduction holes 209 through which processing gas is introduced into the processing chamber 207. The gap between the shower plate 208 and the lid member 205 is a buffer chamber 210 to which processing gas is supplied and diffuses. The buffer chamber 210 and the plurality of gas introduction holes 209 communicate with each other, and the buffer chamber 210 By passing through, the uneven distribution of the processing gas introduced into the processing chamber 207 via the gas introduction hole 209 is further reduced.

  In the present embodiment, the buffer chamber 210 communicates with a processing gas supply path 223 that is a gas supply pipe disposed on the upper side wall of the processing container 201, and is connected to the buffer chamber 210 via the processing gas source 220 and the processing gas supply path 223. It is communicated.

  A stage including a sample stage 212 on which a sample to be processed is placed is arranged at a position below the processing chamber 207 and facing the shower plate 208.

  The sample stage 212 is disposed at the center of the substantially cylindrical processing container 201, and the sample placement on the sample stage 212 is formed by a space formed between the side wall of the processing container 201 and the periphery of the sample stage 212. The space inside the processing chamber 207 above and below the unit communicates with the vacuum chamber 216. A susceptor ring 213 that covers and protects a part of the surface of the sample table 212 is disposed around the surface of the sample table 212 that is disposed on the upper surface of the sample table 212 and on which a sample such as a semiconductor wafer to be processed is mounted. Has been placed.

  The stage also includes a support device 214 that supports and moves the sample stage 212 in the vertical direction (substantially vertical direction) in the figure, and includes a support beam 214a and an actuator 214b that is a driving means connected to the support beam 214a below the support beam 214a. And have. Further, a supply path for fluid such as electric power and gas supplied to the sample table 212 is arranged inside the support device 214. Further, around the support beam 214a, a bellows 215 is disposed that expands and contracts by sealing the inside of the processing container 202 with respect to the outer peripheral atmosphere including the actuator 214b.

  Further, the sample stage 212 is supplied with electric power from a high-frequency power source (not shown), and also functions as an electrode for setting the potential of the sample placed above the plasma to a predetermined value.

Further, in the present embodiment, an inner wall member 211 that covers the inner surface of the processing container 201 and the side surface facing the processing chamber 207 is disposed inside the processing container 201. This inner wall member 211 is a dielectric cylindrical member 211a that covers the inner wall surface of the substantially cylindrical processing vessel 201, and a member that is disposed below and supports the dielectric cylindrical member 211a, and a ground electrode for plasma in the processing chamber 207. And a ground member 211b. In the present embodiment, the processing vessels 201 and 202 are grounded by a predetermined means.

  The ground member 211b is attached to the processing container 201 or the processing container 202, and includes a cylindrical flange portion whose lower end extends to the vacuum chamber 216 side. A space between the flange portion and the sample table 212 is provided. And the gas in the processing chamber 207 moves downward.

  Thereby, the flow in which the introduced processing gas moves downward through the outer peripheral side of the sample table 212 is suppressed from being biased in the circumferential direction of the sample table 212 and the sample, and the bias in processing of the sample due to plasma is reduced.

An exhaust device for exhausting and decompressing the vacuum chamber 216 inside the processing container 202 and the inside of the processing chamber 207 inside the processing container 201 is disposed below the processing container 202. The exhaust device includes a dry pump 232 that exhausts the inside of the processing chamber 207 and the vacuum chamber 216 to reduce the atmospheric pressure, and is disposed upstream of the dry pump 232 to be in a predetermined high vacuum state from the decompressed state. In order to achieve this, a turbo molecular pump 230 to be evacuated, and a plurality of rotations that adjust the communication between the turbo molecular pump 230 and the processing vessel 202 and the vacuum chamber 216 and change the size of the opening of the passage between them. A variable valve 231 having a plate-like flap is provided.

  By adjusting the size of the opening due to the operation of the variable valve 231 and the height of the exhaust performance by the turbo molecular pump 230 and the dry pump 232, the exhaust amount speed and thus the pressure in the processing chamber 207 and the vacuum chamber 216 are adjusted. .

  The vacuum transfer container 112 is also attached to the lower part of the vacuum transfer container 112 in order to reduce the pressure in the vacuum transfer chamber 218 inside the vacuum transfer container 112 where the sample is transferred under reduced pressure. ing. This exhaust device has a configuration including a turbo molecular pump 219 having a function equivalent to that of the turbo molecular pump 230, and the pressure in the vacuum transfer chamber 218 is reduced to a value substantially equal to the pressure in the vacuum chamber 216 or the processing chamber 207. It can be decompressed.

Further, an inert gas introduction path 227 is connected to the lower part of the vacuum transfer container 112 in order to introduce a predetermined inert gas into the vacuum transfer chamber 218. The inert gas introduction path 227 communicates with the inert gas source 224, and the MFC 225 for adjusting the flow rate of the inert gas and the upstream introduction valve 226 are disposed on the inert gas introduction path. The pressure in the vacuum transfer chamber 218 is adjusted to a desired value by introducing an inert gas that is adjusted by the operation of the MFC 225 and the introduction valve 226 and by adjusting the amount of exhaust by the exhaust device including the turbo molecular pump 219. Is done.

  The processing gas is supplied from a gas cylinder or the like provided in the processing gas source 220, and an MFC (mass flow controller) 221 that is a flow rate controller disposed on the processing gas supply path 223 and an introduction disposed downstream thereof. By the operation of the valve 222, the amount of gas flowing in the processing gas supply path 223 is adjusted, and the supply amount to the processing container 201 is adjusted.

  In addition, the pressure in the processing container 201 or the processing container 202 is adjusted by adjusting the supply of the processing gas and the exhaust by the exhaust device. It is detected by the pressure sensor provided in the. The output of the detected result is transmitted to the control device 228 connected thereto, and is detected as pressure in the control device 228.

  The control device 228 is connected to operation parts constituting the etching processing unit 103 such as the exhaust device including the MFC 221, the introduction valve 222, the variable valve 231, and the exhaust device including the turbo molecular pump 219, and indicates the state of the operation. A signal having information is received, and a signal for instructing the operation of these components to be in a predetermined state is transmitted. In this way, the processing and operation of the etching processing unit 103 are adjusted.

In the processing container portion 103a, the processing gas supplied to the buffer chamber 210 from the plurality of gas introduction holes 209 formed in the shower plate 208 enters the processing chamber 207 from above the sample mounting surface on the sample stage 212. Supplied. Further, the processing chamber 207 and the vacuum chamber 216 communicating with the processing chamber 207 are exhausted by an exhaust device such as a turbo molecular pump 230 disposed at the bottom of the processing container 202, and the processing chamber 207 introduces processing gas. It is adjusted to a predetermined pressure while receiving.

  In this state, the processing gas is excited by the action of the electric field or magnetic field supplied into the processing chamber 207 via the lid member 205 and the wall member of the processing container 202, and the plasma is generated in the sample table 212 in the processing chamber 207 and the shower above it. It is generated in a space formed between the plate 208 and the distribution of plasma in the processing chamber 207 is adjusted by adjusting these electric and magnetic fields.

  At this time, the sample stage 212 is moved in a state in which the sample is placed to the position illustrated by the dotted line by the operation of the support device 214 by the dotted line. More specifically, the ground member 211b rises to a height position near the upper end and near the lower end of the cylindrical member 211a. In this way, the space in the processing chamber 207 is reduced, and a higher plasma density is realized to improve the efficiency of sample processing.

  Next, the configuration of gas supply and exhaust of the processing container 103a will be described in more detail with reference to FIG. FIG. 3 is a longitudinal sectional view for schematically explaining the outline of the processing container section shown in FIG. 2 and the surrounding configuration.

  As described above, the control device 228 is connected to the MFC 221, the introduction valve 222, the gate valve 217, the exhaust device, the radio wave source 203, the solenoid coil 206, and the like disposed on the processing gas supply path 223. The operation is adjusted by sending and receiving signals.

  As shown in FIG. 3, in this embodiment, a sample is processed using a plurality of types of processing gases. For this reason, the plurality of processing gas sources 220a, 220b, 220c, and 220d have h. Each gas source is connected to a processing gas pipe 301a, 301b, 301c, 301d that joins the processing gas supply path 223.

  Among the processing gas sources 220, the processing gas source 220a stores Ar, which is an inert gas, and this Ar gas is used as a gas for diluting other highly reactive gases. Then, the gas is introduced into the processing chamber 207 from the gas introduction hole 209 via the processing gas supply path 223.

  MFCs 221a, 221b, 221c, and 221d and introduction valves 222a, 222b, 222c, and 222d are disposed on the processing gas pipelines 301a, 301b, 301c, and 301d, respectively, and the operation of the controller 228 adjusts these operations. Thus, the flow rate and speed of each processing gas supplied to the processing container 201 are set to desired values. Further, by adjusting the operation of the radio frequency power source connected to the radio wave source 203, the solenoid coil 206, and the electrode in the sample stage 212, plasma having a desired density, distribution, and intensity is formed. Here, the shower plate 208 constitutes the ceiling surface of the processing chamber 207 and faces the generated plasma.

Further, the pressure in the processing chamber 207 and the vacuum chamber 216 is adjusted by adjusting the operation of the exhaust device below the processing container 202. Such adjustment is performed by transmitting an operation command to each unit based on the result of detecting the processing state in the processing chamber using the inert gas introduction path 227 or the like.

  The control device 228 is connected to a support device 214 that supports the sample stage 212, and the position of the sample stage 212, the attachment / detachment of the sample from the sample placement surface, and the like are adjusted according to the order and procedure of sample processing. The

  In particular, when the sample is exchanged between the vacuum transfer container 112 and the processing container unit 103a, the pressure in the two containers and the height positions of the gate valve 217 and the sample stage 212 for opening and closing the communication between them are determined. The operation to be set is instructed according to the current processing state and order.

  FIG. 4 is a flowchart showing an example of a sample processing flow of the etching processing unit according to the present embodiment.

  In this figure, a loading step 401 in which a sample to be processed is transferred from the vacuum transfer container 112 into the processing containers 201 and 202, and a processing step in which the sample to be processed is loaded and then placed on the sample stage 212 for processing. 402 and an unloading step 403 in which the processed sample is unloaded from the sample stage 212, transferred from the processing containers 201 and 202, and transferred into the vacuum transfer container 112.

  In the carry-in step 401, in the present embodiment, the pressure in the processing chamber 207 or the vacuum chamber 216 inside the processing vessels 201 and 202 and the pressure in the vacuum transfer chamber 218 in the vacuum transfer vessel 112 are adjusted to be approximately equal. At this time, it is desirable to adjust the pressure in the processing chamber 207 or the vacuum chamber 216 and the vacuum transfer chamber 218 to be the same or slightly so that the pressure in the processing chamber 207 or the vacuum chamber 216 is lowered.

In step 404 of carry-in step 401, a gas source of an inert gas such as Ar, which is one of the processing gas sources 220, is provided in the processing containers 201 and 202 in order to adjust the pressure in both chambers. The gas from 220a passes through the gas inlet hole 209 disposed in the shower plate 208 constituting the top surface above the processing chamber 207 via the processing gas pipe 301a, the processing gas supply path 223, and the buffer chamber 210. Supplied.

  At this time, as in step 405, the exhaust device is driven and the pressure in the processing chamber 207 and the vacuum chamber 216 is set to a predetermined value based on the relationship between the flow rate, speed and exhaust amount of the supplied Ar gas, and the exhaust speed. Therefore, the variable valve 231 constituting the exhaust device is set to an angle corresponding to a predetermined pressure value, and the opening degree of communication between the exhaust device and the processing container 202 is set. In the present embodiment, all the flaps of the variable valve 231 are rotated so as to be in contact with each other and the communicating openings are closed. Actually, the vacuum chamber 216 communicates with the inlet of the turbo molecular pump 230 of the exhaust device through a slight gap between the flaps. Is discharged.

  After waiting for a predetermined time to elapse between the introduction of the gas from the gas introduction hole 209 and the exhaust by driving the exhaust device (step 406), the gate valve 217 is opened (step 407). After the elapse of the predetermined time, the pressure in the vacuum transfer chamber 218 in the adjacent vacuum transfer vessel 112 and the vacuum chamber 216 in the process vessel 202 or the process chamber 207 is partitioned by the gate valve 217 by the introduced Ar gas. As described above, it is adjusted to be approximately the same and is in a steady state. In the present embodiment, the pressure in the vacuum transfer chamber 218 is about 10 Pa, and the pressure in the vacuum chamber 216 or the processing chamber 207 is about 9.5 Pa.

  After the gate valve 217 is opened, the sample placed on the robot arm (not shown) in the vacuum transfer container 112 passes through the gate opened and closed by the gate valve 217, moves the sample into the vacuum chamber 216, and is set to a predetermined height. The sample is placed on the sample placement surface on the table 212 (step 408).

  After the robot arm moves again into the vacuum transfer chamber 218, the gate valve 217 is driven to close the gate (step 409), and the vacuum chamber 216 and the processing chamber 207 are exhausted in accordance with a command from the controller 228. , The pressure in the processing chamber 207 or the vacuum chamber 216 is reduced, and the sample is adjusted to an appropriate pressure in the stage before processing (step 410). In the present embodiment, the pressure in the processing chamber 207 or the vacuum chamber 216 when processing the sample is about 0.1 Pa. At this time, the flap of the variable valve 231 is rotated so that the opening degree of communication between the exhaust device and the processing container 202 is larger than that in steps 405 and 406, and the exhaust amount or speed is increased.

  In process step 402, the sample is processed. In the present embodiment, a plurality of types of processing gases from the processing gas source 220 are introduced into the processing chamber 207 through the plurality of gas introduction holes 209 of the shower plate 208, and an electric field and a magnetic field are supplied to the sample chamber. Etching is started (step 411). Usually, the pressure in the processing chamber 207 or the vacuum chamber 216 is increased as compared to the step 410. When the etching process is completed (step 412), the supply of the processing gas from the processing gas source 220 is stopped, and the pressure in the processing chamber 207 or the vacuum chamber 216 is reduced by driving the exhaust device, so that a higher degree of vacuum is achieved. It will be in the state of. In the present embodiment, the pressure is about 0.1 Pa.

  In this way, adverse effects on the sample being transferred due to the processing gas remaining in the processing chamber 207 or the vacuum chamber 216 or the reaction product gas before the sample transfer can be reduced.

  In the carry-out step 403, Ar gas is first introduced into the processing chamber 207 from the gas source 220a, and the pressure in the processing chamber 207 or the vacuum chamber 216 is increased (step 414). Similarly to step 405, after the variable valve 231 is set to an opening corresponding to the desired pressure value in step 415, the system waits for a predetermined time (step 416), and the pressure in the processing chamber 207 or the vacuum chamber 216 is set to the desired value. After confirming that the value is reached, the gate valve 217 is opened (step 417). Similar to the loading step 401, the pressure in the processing chamber 207 or the vacuum chamber 216 is substantially the same as the pressure in the vacuum transfer chamber 218, and preferably the same or slightly higher pressure in the vacuum transfer chamber 218. Is done. In step 415, the opening of the variable valve is closed as in step 405.

  After the sample is unloaded from the sample mounting surface on the sample table 212 and moved into the vacuum transfer container 112 by the reverse procedure of step 408, the gate valve 217 is driven to close the gate (step 419). Thereafter, in order to lower the pressure in the processing chamber 207 or the vacuum chamber 216 again to achieve a high degree of vacuum as in Step 410, the exhaust amount or speed of the exhaust by the exhaust device is increased.

  FIG. 5 shows the relationship between the flow of processing according to different orders and procedures of the vacuum processing apparatus according to the above embodiment and the change in pressure in the processing chamber or the vacuum chamber. FIG. 5 is a graph showing the flow of sample processing and the change in pressure in the processing chamber or the vacuum chamber according to different orders and procedures in the vacuum processing apparatus shown in FIG.

  In the first sequence shown in FIG. 5 (a) above, as shown in FIG. 4, the sample is unloaded after the processing from the sample loading step, and once inside the processing chamber 207 or the vacuum chamber 216 after the sample processing. Evacuate to high vacuum and depressurize. Thereafter, Ar gas is again introduced into the processing chamber 207 or the vacuum chamber 216 to increase the pressure.

That is, the pressure in the processing chamber 207 or the vacuum chamber 216 is increased to approximately the same as that in the vacuum transfer chamber 218 in the loading step, and after the pressure is reduced to a high vacuum level in the processing step, the processing gas is introduced to Processing is performed. The pressure in the processing chamber 207 or the vacuum chamber 216 during processing is a pressure between the pressure in the loading step and the high vacuum level. After the processing is completed, the pressure in the processing chamber 207 or the vacuum chamber 216 is increased again to approximately the same as the pressure in the vacuum transfer chamber 218 again in the transfer step after being evacuated and decompressed to a high degree of vacuum. In this state, the gate valve 217 is opened, the sample is taken out and the gate valve 217 is closed, and then the inside of the processing chamber 207 or the vacuum chamber 216 is again decompressed to a high degree of vacuum.

  On the other hand, depending on the sample to be processed, it may not be necessary to reduce the pressure to a high degree of vacuum after the processing is completed in the processing step. For example, in the case where a sample to be processed that has a relatively small amount of corrosive gas or a low amount of highly reactive reaction product is a target to be processed, the adverse effect on these samples during sample transfer is small. The pressure reduction step may be deleted if necessary, or the degree of vacuum is stopped in a relatively low state, and the pressure in the next processing chamber 207 or vacuum chamber 216 and the pressure in the vacuum transfer chamber 218 are substantially equal. In order to achieve this, it is possible to proceed to the step of increasing the pressure by introducing gas.

The lower graph shown in FIG. 5B shows the pressure fluctuation in the vacuum chamber 216 or the processing chamber 207 during such processing. In this sequence, after the processing of the sample in the processing step is completed, the pressure in the processing chamber 207 or the vacuum chamber 216 is increased from the pressure as it is to a pressure substantially equal to the pressure in the vacuum transfer chamber 218. . The operation at this time is equivalent to the operation from step 414 to step 417 in the unloading step 403 shown in FIG.

  As shown in the above embodiment, when the processed sample is carried out from the processing chamber 207 or the processing containers 201 and 202, the pressure in the processing containers 201 and 202 and the vacuum transfer adjacent to each other with the gate valve 217 interposed therebetween. The gate valve 217 is opened with the pressure in the container 112 being substantially equal, preferably the same or slightly higher in the vacuum transfer container 112. At this time, the pressure in the processing container after processing is increased so as to be equal to the pressure in the vacuum transfer container 112.

  For this purpose, Ar gas, which is an inert gas, is introduced into the processing chamber 207 from the gas introduction hole 209 of the shower plate 208 that forms the inner wall surface of the processing chamber 207 and faces the plasma. Since the gate is opened in a state where the gas is introduced and substantially equal to the pressure in the vacuum transfer chamber 218, the processing gas and deposits in the processing containers 201 and 202 may move into the vacuum transfer chamber 218. Thus, the adverse effect on the sample and the adverse effect on the vacuum transfer container 112 when the sample is transferred in the vacuum transfer chamber 218 are reduced.

  Further, when the gate is opened, gas is introduced into the processing chamber 207 from above the sample or the sample stage 212 and moves downward. Further, in the present embodiment, the inner wall member 211 including the ground member 211b is disposed in the processing chamber 207 or the vacuum chamber 216 to restrict the flow and prevent the gas from flowing into the vacuum transfer chamber 218 from the side gate. The movement of the gas and the product in the sample direction of the resulting gas is suppressed.

  In addition, since the inert gas is introduced from the introduction hole arranged on the inner wall surface of the processing chamber 207 facing the plasma, the introduction of the gas reduces the products on the inner wall surface that move toward the sample, Adverse effects are reduced. For example, the inside of the processing chamber 207 which is the space in the processing chamber 201 from the introduction hole arranged in the outer surface of the shower plate 208, the cylindrical member 211a or the grounding member 211b, the sample stage 212, etc. constituting the inner surface of the processing chamber 207 To be introduced. These introduction holes are arranged at a position substantially equal to or higher than the height position where the sample being processed is arranged, and the inside of the processing container 201 is exhausted from the exhaust device arranged below the sample stage 212. Is desirable. These members are preferably members made of a conductor or a semiconductor to which electric power is applied or which acts as an electrode for plasma.

The sample table 212 is configured to be movable up and down by a support device that supports the sample table 212 from below. Further, when the gate is opened, the sample table 212 is arranged at a predetermined height above, and then the sample table 212 is set. It can also be lowered and placed at a predetermined height suitable for loading and unloading. Thereby, the influence of the gas flow in the lower vacuum chamber 216 that is opened and communicated can be further reduced, the occurrence of adhesion of foreign matter to the sample can be reduced, and the processing yield can be improved.

  In this embodiment, plasma generation uses ECR using UHF radio waves and a magnetic field from a solenoid coil. However, as a plasma generation source, capacitive coupling, inductive coupling, and microwaves are used. The present invention is not limited to the plasma generation method disclosed above.

  In the above-described embodiments, the plasma etching apparatus has been described as an example. However, the present invention can be widely applied to a processing apparatus in which an object to be processed such as a sample is heated in a reduced pressure atmosphere. For example, examples of the processing apparatus using plasma include a plasma etching apparatus, a plasma CVD apparatus, and a sputtering apparatus. Examples of the processing apparatus that does not use plasma include ion implantation, MBE, vapor deposition, and low pressure CVD.

It is an example of the whole layout drawing of a vacuum processing apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of the processing unit of the vacuum processing apparatus shown in FIG. It is a schematic diagram which shows the outline of a structure of the processing unit shown in FIG. It is a flowchart which shows the flow of a process of the vacuum processing apparatus shown in FIG. It is a graph which shows the flow of the process of the sample by a different order in the vacuum processing apparatus shown in FIG. 1, and the change of the pressure in a process chamber or a vacuum chamber.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 ... Vacuum processing apparatus, 101 ... Vacuum side block, 102 ... Atmosphere side block, 103 ... Etching processing unit, 104 ... Ashing processing unit, 108 ... Atmosphere side transfer container, 109 ... Cassette, 110 ... Dummy cassette, 112 ... Vacuum Side transfer container 113,
113 '... Load lock chamber, 201, 202 ... Processing vessel, 203 ... Radio wave source, 204 ... Wave guide means, 205 ... Lid member, 206 ... Solenoid coil, 207 ... Processing chamber, 208 ... Shower plate, 209 ... Gas introduction hole 210 ... Buffer chamber, 211 ... Inner wall member, 212 ... Sample stage, 213 ... Susceptor ring, 214 ... Supporting device, 215 ... Bellows, 216 ... Vacuum chamber,
217 ... Gate valve, 218 ... Vacuum transfer chamber, 219,230 ... Turbo molecular pump, 220 ... Process gas source, 221,225 ... Mass flow controller, 222,226 ... Introduction valve, 223 ... Process gas supply path, 224 ... Inert Gas source, 227 ... inert gas introduction path,
228 ... Control device, 231 ... Variable valve, 232 ... Dry pump.

Claims (5)

A processing chamber that is disposed in a vacuum vessel and generates plasma therein, a sample table that is disposed in the lower part of the processing chamber and on which a sample to be processed is placed, and is disposed above the processing chamber. A plate having an introduction hole for introducing a processing gas into the processing chamber, a transport container for transporting the sample to be processed through the decompressed interior connected to the vacuum container, and the interior of the transport container A gate valve that opens and closes a passage communicating with the inside of the vacuum vessel,
While introducing a predetermined gas into the vacuum vessel from the introduction hole and adjusting the pressure in the vacuum vessel and the pressure in the transfer vessel to be approximately equal, the gate valve is opened to remove the sample from the vacuum vessel. And a vacuum processing apparatus for transporting between the vacuum transport container. A processing chamber that is arranged in a vacuum vessel and in which plasma is formed, a sample stage that is arranged in the lower part of the processing chamber and on which a sample to be processed is placed, and is connected to the vacuum vessel to reduce the pressure. A transport container in which the sample to be processed is transported, and a gate valve that opens and closes a passage that communicates the interior of the transport container and the inside of the vacuum container,
The gate valve is opened after the pressure in the processing chamber and the pressure in the transfer container are adjusted to be substantially equal while introducing a predetermined gas through a hole disposed in the processing chamber and facing the plasma. And a vacuum processing apparatus for transporting the sample between the vacuum container and the vacuum transport container.   The vacuum processing apparatus according to claim 1, wherein the vacuum container is detachably connected to the vacuum transfer container.   The vacuum processing apparatus according to claim 1, wherein the predetermined gas is an inert gas. 5. The vacuum processing apparatus according to claim 1, wherein the pressure in the processing chamber and the pressure in the transfer container are introduced while the predetermined gas is introduced after the pressure is once reduced to a low pressure after the processing of the sample. Are adjusted to be approximately the same, and then the gate valve is opened to carry out the sample from the vacuum vessel.

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