JP2003115519A - Manufacturing method of semiconductor device, semiconductor manufacturing apparatus, load lock chamber, substrate storage case and stocker - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which has little amount of foreign matters with fine grain diameters on a substrate such as a processed wafer and has little defects of a pattern formed on a substrate, a semiconductor manufacturing device, a load lock chamber, a substrate storage case and a stocker. SOLUTION: The semiconductor device has a pressure reduction process for reducing pressure inside a load lock chamber 1 after a substrate 10 is carried into the load lock chamber 1. The manufacturing method of the semiconductor device has a process for mounting the substrate 10 on a heating table 6 inside the load lock chamber 1 and a heating process for heating the substrate 10 by the heating table 6.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing method, a semiconductor manufacturing apparatus, a load lock chamber, a substrate storage case, and a stocker for loading a substrate such as a wafer or a liquid crystal substrate into a substrate processing chamber. .

[0002]

2. Description of the Related Art A conventional semiconductor manufacturing apparatus will be briefly described below with reference to FIG. FIG. 9 is a schematic diagram showing a conventional semiconductor manufacturing apparatus. In the figure, 1 is a load lock chamber that can be adjusted to be equal to the pressure in the wafer processing chamber, and 3 is a gate valve (second valve) provided at the boundary with the outside for loading / unloading the wafer into / from the load lock chamber 1. (Gate valve), 4 is a gate valve (first gate valve) provided at the boundary with the load lock chamber 1 for loading / unloading the wafer into / from the wafer processing chamber, and 7 is a load lock chamber including a purge valve and a pipe. 1 is a purge line for supplying an inert gas or the like to return the chamber to atmospheric pressure, 8 is a vacuum exhaust system for evacuating the load lock chamber 1, and 10 is a wafer processing chamber via the load lock chamber 1. Wafers (substrates) that are carried into the wafer, 11 is a cassette that stores a plurality of wafers 10, 15 is a wafer processing chamber (substrate processing chamber) that performs process processing such as processing, film formation, and impurity diffusion of the wafers 10, 16 Wafer holder for holding the wafer 10 by the wafer processing chamber 15, 18 denotes a vacuum pumping system for evacuating the wafer processing chamber 15.

In the semiconductor manufacturing apparatus configured as described above, the wafer 10 is carried in and out of the apparatus in the following procedure. First, a cassette 11 containing a plurality of wafers 10
Are transported to the vicinity of the gate valve 3 in the load lock chamber 1 by a transport device (not shown). Then, the gate valve 3 is opened, and one wafer 10 in the cassette 11 is loaded into the load lock chamber 1. Thereafter, the gate valve 3 is closed, and the pressure in the sealed load lock chamber 1 is reduced by the vacuum exhaust system 8 until it becomes equal to the pressure in the wafer processing chamber 15. Here, the inside of the wafer processing chamber 15 is maintained at a predetermined pressure by the vacuum exhaust system 18. Further, the interior of the load lock chamber 1 is gently decompressed by a so-called slow vent for the purpose of preventing the foreign matter from rising in the interior.

Next, the gate valve 4 of the load lock chamber 1 is depressurized to the same pressure as the wafer processing chamber 15.
Is released. Then, the wafer 10 is transferred onto the wafer holder 16 in the wafer processing chamber 15 by a transfer device (not shown). Then, after the gate valve 4 is closed, a desired process treatment is performed on the wafer 10 in the wafer treatment chamber 15.

Wafer 10 that has undergone the desired process treatment
After that, the gate valve 4 is opened and closed to be transferred to the load lock chamber 1 again. Then, by opening the purge valve of the purge line 7 and supplying an inert gas into the load lock chamber 1, the pressure in the sealed load lock chamber 1 is returned to the atmospheric pressure (initial pressure). After that, the gate valve 3
Is opened and the wafer 10 is returned to the predetermined stage of the cassette 11. Then, the same process as described above is performed on still another wafer 10.

[0006]

In the above-mentioned prior art, when a foreign substance adheres to the surface of the wafer and a pattern is subsequently formed on the wafer, the foreign substance causes a pattern defect. In general, foreign substances having various particle sizes are attached to the processed wafer. Then, the foreign matter having a grain size which is more than half of the minimum processing dimension of the formed pattern causes the pattern defect. Therefore, for example, when forming a pattern having a gate length of 0.13 μm, it is necessary to take care so that foreign matter having a particle size of 0.065 μm or more does not adhere to the wafer.

However, in recent years, the miniaturization of the processing relating to the semiconductor device has been promoted for the purpose of high integration of the semiconductor device, and the particle size of the foreign matter to be the target of the pattern defect is becoming smaller and smaller. Specifically, development of a semiconductor device having a pattern processing dimension of 0.1 μm has been actively pursued, and 0.0 which has not been a problem so far in the past.
Adhesion of foreign matter of about 5 μm onto the wafer has become a problem.

The present invention has been made in order to solve the above problems, and in particular, a substrate such as a wafer which has been subjected to a process treatment has a small amount of foreign matter having a particle size of 0.05 μm or more, An object of the present invention is to provide a semiconductor device manufacturing method, a semiconductor manufacturing apparatus, a load lock chamber, a substrate storage case, and a stocker, in which the pattern formed on the semiconductor substrate has few defects.

[0009]

The inventor of the present application has come to know the following matters as a result of repeated research for solving the above problems. That is, water molecules or organic molecules (such as alcohol) attached to the surface of the substrate are condensed and attached in the form of ice on the substrate surface in a depressurized state, particularly in a load lock chamber close to a vacuum state. Then, in the depressurization step of the load lock chamber, ice-like water molecules and the like formed on the substrate become foreign matter nuclei, and the contaminants with extremely few surfaces are collected and the residue becomes nuclei. Process processing such as film formation is performed. Then, after the processing is completed, the foreign matter nucleus itself becomes a foreign matter on the wafer, or the foreign matter nucleus grows due to the residue and becomes a foreign matter on the wafer. The particle size of foreign matter formed on this wafer is 0.05.
It is about μm.

The present invention has been made in order to solve the above problems based on the above research results. That is, in the method for manufacturing a semiconductor device according to the first aspect of the present invention, the substrate is placed in the load lock chamber. A method of manufacturing a semiconductor device, comprising: a depressurizing step of depressurizing the load-lock chamber after loading the substrate onto a heating table in the load-lock chamber; and heating the substrate by the heating table. And a heating step to perform.

According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the first aspect of the present invention.
The method further comprises a removing step of removing foreign matter adhering to the substrate before the substrate is carried into the load lock chamber.

According to a third aspect of the present invention, in the method of manufacturing a semiconductor device according to the second aspect, the removing step is a step of removing foreign matter adhering to the substrate with an air curtain. It is a thing.

According to a fourth aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the second aspect, wherein the removing step is performed in the substrate storage case having the substrate held therein. This is a step of removing foreign matter adhering to the.

According to a fifth aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the first aspect, wherein the heating temperature of the substrate in the heating step is 80 to 80. It is set to 150 degrees.

Further, the load lock chamber according to the invention of claim 6 is arranged in parallel with the substrate processing chamber for processing the substrate through the first gate valve, and the pressure in the chamber is controlled by the substrate. A load lock chamber that can be adjusted to a pressure equal to the pressure in the processing chamber, and is provided with a single or a plurality of substrates and a heating table for heating the substrates.

The load lock chamber according to a seventh aspect of the present invention is the load lock chamber according to the sixth aspect of the present invention, in which a cassette accommodating a plurality of the substrates can be carried in and out of the chamber.

Further, a load lock chamber according to the invention of claim 8 is the load lock chamber according to the invention of claim 6, further comprising a second gate valve for loading / unloading the substrate into / from the chamber. An air curtain is installed near the outside of the gate valve.

A load lock chamber according to a ninth aspect of the present invention is the load gate chamber according to any one of the sixth to eighth aspects, in which a second gate valve for loading / unloading the substrate into / from the chamber is used. And the second gate valve is
It is provided at a position facing a door of a substrate storage case that internally holds a cassette that stores a plurality of the substrates.

According to a tenth aspect of the present invention, in the load lock chamber according to the ninth aspect of the invention, the substrate storage case can introduce a cleaning gas for cleaning the surface of the substrate from the outside. It was formed.

Further, in the load lock chamber according to the invention of claim 11, in the invention of claim 9 or 10, the second gate valve and the door of the substrate storage case are opposed to each other. In this case, the peripheral area of the second gate valve and the door can be sealed.

A semiconductor manufacturing apparatus according to a twelfth aspect of the present invention includes the load lock chamber according to any one of the sixth to eleventh aspects.

A substrate storage case according to a thirteenth aspect of the present invention is a substrate storage case which internally holds a cassette for storing a plurality of substrates, wherein the cleaning gas purifies the surface of the substrate. Is equipped with a port that can be introduced from the outside.

Further, the board storage case according to the invention of claim 14 is the same as that of the invention of claim 13,
The port includes a filter capable of introducing the purification gas, and an engagement portion that engages with a valve that restricts discharge of the purification gas provided in a gas supply device that supplies the purification gas, By mounting on the gas supply device, the valve is opened and the cleaning gas is introduced into the inside through the filter.

The board storage case according to the invention of claim 15 is the same as the invention according to claim 14,
The gas supply device is provided in the stocker.

A stocker according to a sixteenth aspect of the present invention is a stocker having a shelf for mounting and storing a substrate storage case for internally holding a cassette for storing a plurality of substrates, the stocker comprising: Purification gas for purifying the surface of the substrate in the substrate storage case is supplied into the substrate storage case when the substrate storage case is placed on the shelf.

The stocker according to a seventeenth aspect of the present invention is the stocker according to the sixteenth aspect of the present invention, wherein a pipe portion for guiding the cleaning gas to the mounting surface side of the substrate storage case and the substrate storage case. And a valve that opens in tandem with the placement of.

[0027]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will now be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are designated by the same reference numerals, and the duplicate description thereof will be appropriately simplified or omitted.

Embodiment 1. Hereinafter, Embodiment 1 of the present invention will be described in detail with reference to FIGS. First Embodiment FIG. 1 is a schematic diagram of a semiconductor manufacturing apparatus showing a first embodiment of the present invention. In FIG. 1, 1 is a load lock chamber that can be adjusted to be equal to the pressure in the wafer processing chamber, and 3 is a gate valve (second valve) provided at the boundary with the outside for loading / unloading the wafer into / from the load lock chamber 1. Gate valve) 4 is a gate valve (first gate valve) provided at the boundary with the load lock chamber 1 for loading / unloading the wafer into / from the wafer processing chamber,
Reference numeral 6 denotes a heating table (heating device) for mounting the wafer and heating the wafer, and 7 denotes a purge valve, a pipe, a break filter, etc., and supplies an inert gas or the like to the load lock chamber 1 to return the chamber to atmospheric pressure. Purge line, 8 is a vacuum exhaust system for evacuating the load lock chamber 1,
Is a wafer (substrate) that is loaded into the wafer processing chamber through the load lock chamber 1, 11 is a cassette that stores a plurality of wafers 10, and 15 is a wafer that performs process processing such as processing, film formation, and impurity diffusion of the wafer 10. Processing room (substrate processing room), 1
Reference numeral 6 denotes a wafer holder for holding the wafer 10 in the wafer processing chamber 15, and 18 denotes a vacuum exhaust system for evacuating the inside of the wafer processing chamber 15.

Here, the heating table 6 is internally provided with a heating element such as a lamp or a heater. Further, the surface of the heating table 6 on which the wafer 10 is placed is formed of a material having good thermal conductivity. The heating table 6 configured in this way heats the wafer 10 placed on the heating table 6 in the range of, for example, 80 to 150 degrees by the heat generated from the heating element. The temperature on the wafer 10 can be controlled by, for example, a thermometer that contacts the wafer surface to detect the surface temperature and a control unit that changes the output of the heating element based on the detection value of the thermometer. .

In the semiconductor manufacturing apparatus configured as described above, the wafer 10 is carried in and out of the apparatus in the following procedure. First, a cassette 11 containing a plurality of wafers 10
Is transported to a predetermined position near the gate valve 3 in the load lock chamber 1 by a transport device (not shown). Then, the gate valve 3 is opened, the wafer 10 in the cassette 11 is loaded into the load lock chamber 1, and then placed on the heating table 6.

At this time, the wafer 10 placed on the heating table 6 is heated to a predetermined temperature by receiving the heat of the heating element described above. Therefore, water and organic substances attached to the wafer 10 are evaporated and removed from the surface of the wafer 10. Further, the purge valve of the purge line 7 is opened, and a gas such as nitrogen or dry air is supplied into the load lock chamber 1. As a result, the pressure inside the load lock chamber 1 becomes higher than that of the outside (positive pressure), and the outside air is prevented from entering the chamber.

After that, the gate valve 3 is closed, and the evacuation system 8 starts the evacuation of the load lock chamber 1. At this time, the purge valve of the purge line 7 is closed to shut off the supply of nitrogen and dry air into the room. Then, the vacuum exhaust system 8 reduces the pressure in the load lock chamber 1 until it becomes equal to the pressure in the wafer processing chamber 15.

Here, the wafer 10 on the heating table 6 is continuously heated even during the depressurization process of the load lock chamber 1. Therefore, moisture or the like does not adhere to the surface of the wafer 10, and it is possible to prevent the formation of fine foreign matter on the wafer 10 in a low pressure environment.

Next, the gate valve 4 of the load lock chamber 1 is depressurized to a pressure equal to the pressure in the wafer processing chamber 15.
Is released. Then, the wafer 10 is transferred onto the wafer holder 16 in the wafer processing chamber 15 by a transfer device (not shown). Then, after the gate valve 4 is closed, a desired process treatment is performed on the wafer 10 in the wafer treatment chamber 15.

Wafer 10 that has undergone desired process processing
After that, the gate valve 4 is opened and closed to be transferred to the load lock chamber 1 again. Then, by opening the purge valve of the purge line 7 and supplying gas into the load lock chamber 1, the pressure inside the load lock chamber 1 in the sealed state is returned to the atmospheric pressure (initial pressure). After that, the gate valve 3 is opened and the wafer 10 is returned to the predetermined stage of the cassette 11. Then, the same process as described above is performed on still another wafer 10. Even when another wafer 10 is loaded into the load lock chamber 1, gas is supplied into the chamber from the purge line 7 to prevent foreign matter from being rolled up in the chamber.

Next, with reference to FIGS. 2 and 3, foreign substances on the surface of the wafer 10 manufactured by the semiconductor manufacturing apparatus according to the first embodiment will be described. 2A is a schematic state diagram showing the state of foreign matter on the wafer surface manufactured by the conventional semiconductor manufacturing apparatus, and FIG. 2B is a schematic state diagram of the wafer surface manufactured by the semiconductor manufacturing apparatus of FIG. It is a schematic state diagram which shows the state of a foreign material. Here, in FIGS. 2A and 2B, as the wafer 10 to be loaded into the semiconductor manufacturing apparatus, a wafer having about 100 foreign matters C adhered to its surface in advance was used. The foreign material C in the figure has a particle size of 0.065 μm or more.

As shown in FIGS. 2 (a) and 2 (b), there are about 500 foreign substances C on the surface of the wafer 10 manufactured by the conventional semiconductor manufacturing apparatus, whereas in FIG. The surface of the wafer 10 manufactured by the semiconductor manufacturing apparatus has about 1
There are 00 foreign substances C. As described above, the surface of each wafer 10 had about 100 foreign matter C adhered thereto in advance before being loaded into the apparatus.
In the case of 0, the increase of the foreign matter C is about 400 in the conventional case, and is almost 0 in the first embodiment. As described above, according to the first embodiment, the foreign matter C formed on the wafer 10 is greatly reduced.

FIG. 3 is a schematic graph showing the relationship between the particle size and the number of foreign particles on the surface of the wafer manufactured by the semiconductor manufacturing apparatus of FIG. In FIG. 3, the horizontal axis represents the particle size of the foreign matter, and the vertical axis represents the cumulative number of the foreign matter (the cumulative number is sequentially added from the largest particle size). Also, a broken line K in FIG.
Indicates the relationship between the particle size and the number of foreign particles on the wafer surface manufactured by the conventional semiconductor manufacturing apparatus, and the solid line L indicates the relationship between the particle size and the number of foreign particles on the wafer surface manufactured by the semiconductor manufacturing apparatus of FIG. Indicates.

As shown in FIG. 3, in the conventional device shown by the broken line K, the cumulative number of foreign particles sharply increases when the particle size of the foreign particles becomes 0.1 μm or less, whereas in the present embodiment shown by the solid line L. In the case of form 1, the cumulative number of foreign particles gradually increases until the particle size of the foreign particles is about 0.05 μm. As described above, according to the first embodiment, the foreign matters formed on the wafer 10 are greatly reduced.

As described above, in the semiconductor manufacturing apparatus configured as in the first embodiment, almost all foreign matters having a grain size of 0.05 μm or more are formed on the wafer 10 which has been processed. Therefore, it is possible to provide a semiconductor device in which the pattern formed on the wafer 10 has few defects.

Although the wafer 10 is used as the substrate in the first embodiment, a substrate other than the wafer 10, for example,
The present invention can be applied to a liquid crystal substrate or the like.
Even in that case, the same effect as that of the first embodiment can be obtained.

Embodiment 2. Hereinafter, the second embodiment of the present invention will be described in detail with reference to FIG. Second Embodiment FIG. 4 is a schematic diagram of a semiconductor manufacturing apparatus showing a second embodiment of the present invention. The second embodiment differs from the first embodiment in that the cassette can be housed mainly in the load lock chamber. Figure 4
In FIG. 1, 1 is a load lock chamber, 3 and 4 are gate valves, 6 is a heating table, 7 is a purge line, 8 and 18 are vacuum exhaust systems, 10 is a wafer, 11 is a cassette, 15 is a wafer processing chamber, and 16 is a wafer. A holding stand is shown. Here, the load lock chamber 1 is formed so that the gate valve 3 can be opened and the cassette 11 can be loaded and held from the outside.

In the semiconductor manufacturing apparatus configured as described above, the wafer 10 is carried in and out of the apparatus in the following procedure. First, the gate valve 3 is opened, and the cassette 11 containing a plurality of wafers 10 is transferred to a predetermined position near the heating table 6 in the load lock chamber 1 by a transfer device (not shown). Then, the plurality of wafers 10 in the cassette 11
Are placed on the heating table 6. After that, the gate valve 3
Will be closed.

At this time, the plurality of wafers 10 placed on the heating table 6 are heated to a predetermined temperature. Therefore, water and organic substances attached to the wafer 10 are evaporated and removed from the surface of the wafer 10. Further, the purge valve of the purge line 7 is opened, gas such as nitrogen is supplied into the load lock chamber 1, and the evaporated water and organic substances in the chamber are expelled to the outside by the vacuum exhaust system 8.

Thereafter, the vacuum exhaust system 8 reduces the pressure in the load lock chamber 1 until it becomes equal to the pressure in the wafer processing chamber 15. Here, the wafer 10 on the heating table 6
Is continuously heated even during the depressurization process of the load lock chamber 1. Therefore, it is possible to prevent the formation of foreign matter on the wafer 10 in a low pressure environment without adhering moisture or the like to the surface of the wafer 10.

Next, the gate valve 4 of the load-lock chamber 1 is depressurized to the same pressure as the wafer processing chamber 15.
Is released. Then, the plurality of wafers 10 on the heating table 6
One of them is transferred onto the wafer holder 16 in the wafer processing chamber 15 by a transfer device (not shown). And
After the gate valve 4 is closed, a desired process treatment is performed on the wafer 10 in the wafer treatment chamber 15. The wafer 10 that has undergone the desired process is then transferred to the load lock chamber 1 again by opening and closing the gate valve 4.

This process treatment is performed on all of the plurality of wafers 10 placed on the heating table 6, and the wafers 10 that have undergone the process treatment are stored in the cassette 11 in the load lock chamber 1. Then, by opening the purge valve of the purge line 7 and supplying gas into the load lock chamber 1, the pressure in the sealed load lock chamber 1 is returned to the atmospheric pressure. After that, open the gate valve 3,
The cassette 11 is carried out of the load lock chamber 1.

As described above, in the semiconductor manufacturing apparatus configured as in the second embodiment, as in the case of the first embodiment, almost no fine foreign matter is present on the wafer 10 after the process treatment. Wafer 1 because it is not formed
It is possible to provide a semiconductor device with few defects in the pattern formed on the substrate.

In the second embodiment, the wafer 10 is heated by the heating table 6 before the decompression of the load lock chamber 1 is started by the vacuum exhaust system 8. The timing of the heating process of the wafer 10 is not limited to this, and for example, the wafer 10 may be heated by the heating table 6 after the pressure reduction of the load lock chamber 1 is started. Also in this case, the same effect as that of the second embodiment can be obtained.

Embodiment 3. Hereinafter, the third embodiment of the present invention will be described in detail with reference to FIG. FIG. 5 is a schematic diagram of a semiconductor manufacturing apparatus showing a third embodiment of the present invention. The third embodiment differs from the first embodiment in that an air curtain is installed mainly near the gate valve of the load lock chamber. In FIG. 5, 20 indicates an air curtain. Here, the air curtain 20 is provided near the outside of the load lock chamber 1 of the gate valve 3. Then, the purified air is supplied to the gate valve 3
Is jetted from the air curtain 20 so as to cover the opening when the is opened.

In the semiconductor manufacturing apparatus configured as described above, the wafer 10 is carried in and out of the apparatus in the following procedure. First, a cassette 11 containing a plurality of wafers 10
However, it is transported to a predetermined position near the gate valve 3 near which the air curtain 20 is provided by a transport device (not shown). Then, the gate valve 3 is opened, the wafer 10 in the cassette 11 is loaded into the load lock chamber 1, and the heating table 6
Placed on top.

At this time, the wafer 10 in the cassette 11 is
Will be carried into the load lock chamber 1 across the air flow ejected from the air curtain 20 (the portion shown by the broken line in the figure). Due to this air flow, water and organic substances attached to the surface of the wafer 10 are blown off to some extent. Therefore, before the wafer 10 is loaded into the load lock chamber 1, the water and the like on its surface are removed to some extent.

After the wafer 10 is placed on the heating table 6, the gate valve 3 is closed. Then, as in the first embodiment, the load lock chamber 1 is depressurized while heating the wafer 10. Then, as in the case of the first embodiment, the wafer 10 is loaded into the wafer processing chamber 15 to perform a desired process, and then the wafer 10 is transferred to the load lock chamber 1 again.

As described above, in the semiconductor manufacturing apparatus configured as in the third embodiment, as in the above-described respective embodiments, almost no fine foreign matter is present on the wafer 10 after the process treatment. Wafer 1 because it is not formed
It is possible to provide a semiconductor device with few defects in the pattern formed on the substrate. Further, as an effect peculiar to the third embodiment, since foreign matters such as water on the wafer 10 are removed before the wafer 10 is loaded into the load lock chamber 1, the heating table 6 is used to remove the foreign matter on the wafer 10. The step of removing water and the like can be efficiently performed in a short time.

In the third embodiment, the air curtain 20 installed in the vicinity of the gate valve 3 means all devices for purifying the surface of an object by the flow of gas, for example, a device such as a clean tunnel. It also includes.

Fourth Embodiment Hereinafter, the fourth embodiment of the present invention will be described in detail with reference to FIGS. 6 is a schematic diagram of a semiconductor manufacturing apparatus showing a fourth embodiment of the present invention. Further, FIG. 7 is a schematic diagram showing the vicinity of the substrate storage case and the stocker in the semiconductor manufacturing apparatus of FIG. 7A is a schematic diagram showing a state before the substrate storage case is placed on the shelf in the stocker, and FIG.
[Fig. 4] is a schematic view showing a state in which a substrate storage case is placed on a shelf in a stocker. The fourth embodiment differs from the third embodiment in that a substrate storage case is used instead of the air curtain to remove foreign matter on the wafer surface before loading the wafer into the load lock chamber. .

6 and 7, 10 is a wafer and 11 is a wafer.
Is a cassette, 23 is a substrate storage case that holds the cassette 11 inside and is substantially sealed, 23a is a port provided on the bottom surface of the substrate storage case 23 for introducing a cleaning gas from the outside, and 25 is a substrate storage case 23. A door for loading / unloading the cassette 11 therein, 26 is a filter provided in the port 23a for introducing the cleaning gas, and 26a is an engagement provided in the port 23a for engaging with the valve of the stocker 30. And 30a are shelves (storage shelves) of the stocker 30 as a gas supply device for supplying the purifying gas to the substrate storage case, and 32 is provided in the stocker 30 so as to open in association with the placement of the substrate storage case 23. Valve 32a is a valve 3 that engages with the engaging portion 26a of the substrate storage case 23.
2 is a protruding portion, 35 is a pipe portion provided on the stocker 30 for guiding the cleaning gas to the mounting surface side (shelf 30a) of the substrate storage case 23, and 36 is the substrate storage case 23 mounted. 3 shows a gas outflow portion provided in the stocker 30 for accommodating the valve 32 and outflowing the purifying gas at the time.

Here, as shown in FIG.
The shelf 30a has a valve 32, a pipe 35, and a gas outlet 36.
Is equipped with. On the other hand, the port 23 of the board storage case 23
The a includes a filter 26 and an engaging portion 26a. Then, as shown in FIG. 7A, when the substrate storage case 23 is not placed on the shelf 30a, the stocker 30
Valve 32 closes the opening of the gas outlet 36. As a result, the purifying gas (the flow in the direction of the arrow in the figure) such as nitrogen or dry air introduced into the pipe portion 35 is generated.
The stocker 30 does not flow out of the stocker 30.
Held in.

On the other hand, as shown in FIG. 7B, when the substrate storage case 23 is placed on the shelf 30a, the protrusion 32a of the valve 32 and the engaging portion 26a of the port 23a are engaged with each other. To do. At this time, the valve 32 is pushed down by the weight of the substrate storage case 23 storing the cassette 11,
The opening of the stocker 30 is opened. As a result, the cleaning gas in the stocker 30 guided to the pipe portion 35 passes through the gap between the gas outflow portion 36 and the valve 32, and the filter 2
It is supplied into the substrate storage case 23 via 6. Then, when the cleaning gas is supplied into the substrate storage case 23, the cleaning gas causes a pollution source to become a substrate storage case 23.
In order to be ejected to the outside (outside the system), the board storage case 23
The surface of the wafer 10 inside and the inside of the substrate storage case 23 are cleaned. At this time, it is almost sealed (atmosphere is shut off)
The flow rate of the cleaning gas supplied into the substrate storage case 23 in the state is, for example, about 1 liter / minute. At this time, the introduced purification gas is discharged to the outside of the substrate storage case 23 through the gap of the substrate storage case 23, so that a rapid pressure increase in the substrate storage case 23 is suppressed.

In the semiconductor manufacturing apparatus configured as described above, referring to FIG. 6, wafer 10 is carried in and out of the apparatus in the following procedure. First, as described above, the shelf 30
The substrate storage case 23 placed on a and cleaned of the plurality of wafers 10 in the cassette 11 is transferred to a predetermined position near the gate valve 3 by a transfer device (not shown). Here, the door 25 of the substrate storage case 23 and the gate valve 3 of the load lock chamber 1 are in a positional relationship of facing each other.
Then, the door 25 and the gate valve 3 are opened, the wafer 10 in the cassette 11 is carried into the load lock chamber 1 from the substrate storage case 23, and placed on the heating table 6. Here, before the wafer 10 is loaded into the load lock chamber 1, foreign substances such as moisture on the surface of the wafer 10 are removed to some extent in the substrate storage case 23.

Then, after the wafer 10 is placed on the heating table 6, the door 25 and the gate valve 3 are closed. Then, as in the first embodiment, the load lock chamber 1 is depressurized while heating the wafer 10. Then, as in the case of the first embodiment, the wafer 10 is loaded into the wafer processing chamber 15 to perform a desired process, and then the wafer 10 is transferred to the load lock chamber 1 again.

As described above, in the semiconductor manufacturing apparatus configured as in the fourth embodiment, as in the above-described respective embodiments, almost no fine foreign matter is present on the wafer 10 after the process treatment. Wafer 1 because it is not formed
It is possible to provide a semiconductor device with few defects in the pattern formed on the substrate. Further, as an effect peculiar to the fourth embodiment, since the water or the like on the wafer 10 is removed before the wafer 10 is loaded into the load lock chamber 1, the water on the wafer 10 by the heating table 6 is removed. And the like can be efficiently performed in a short time.

The stocker 3 in the fourth embodiment is also used.
0 is for temporarily storing the cassette 11 when waiting from the previous step to the next step when performing various steps such as a photoengraving step and a washing step. At that time, by supplying the cleaning gas from the stocker 30 to the substrate storage case 23, organic contaminants adhering to the surface of the wafer 10 by the photoengraving process, water by the cleaning process, etc. are expelled and removed. Further, since the contamination in the substrate storage case 23 is also reduced, the time and effort required for cleaning the case between the steps can be reduced.

In the fourth embodiment, the stocker 30 is used as the gas supply device for supplying the cleaning gas to the substrate storage case 23. However, the gas supply device
The gas supply device is not limited to the stocker 30, and for example, a valve 32 or a pipe portion 35 may be provided in a transfer robot or a load port for transferring the substrate storage case 23.

Embodiment 5. Hereinafter, the fifth embodiment of the present invention will be described in detail with reference to FIG. FIG. 8 is a schematic diagram of a semiconductor manufacturing apparatus showing a fifth embodiment of the present invention. The fifth embodiment mainly differs from the fourth embodiment in the door position of the substrate storage case and the gate valve position of the load lock chamber. In FIG. 8, 10 is a wafer, and 11
Is a cassette, 23 is an atmosphere-shielded substrate storage case,
23a is a port, 25 is a door, 37 is a load lock chamber 1
3 shows a sealing wall provided around the gate valve 3 of FIG.

Here, as shown in FIG. 8, on the bottom surface of the substrate housing case 23, a port 23a for introducing the cleaning gas from the cleaning gas supply device and the cassette 11 are provided.
A door 25 for loading and unloading into and from the load lock chamber 1 is provided side by side in the same plane. On the other hand, on the ceiling surface of the load lock chamber 1, a gate valve 3 is provided at a position where it can face the door 25 of the substrate storage case 23. A sealing wall 37 is provided around the gate valve 3. By bringing the wall surface of the substrate storage case 23 into contact with the sealing wall 37, the peripheral region of the gate valve 3 and the door 25 can be sealed. The sealing wall 37
Are formed so as not to interfere with the opening and closing of the gate valve 3 and the door 25.

In the semiconductor manufacturing apparatus configured as described above, the wafer 10 is carried in and out of the apparatus by the following procedure. First, as in the case of the fourth embodiment, the substrate storage case 23 placed on the gas supply device and cleaned of the plurality of wafers 10 in the cassette 11 is brought into close contact with the sealing wall 37 by the transfer device (not shown). Is conveyed as shown in FIG. Then, the door 25 and the gate valve 3 are opened, and the cassette 11 in the substrate storage case 23 is transported to a predetermined position in the load lock chamber 1. Then, the wafer 10 in the cassette 11 is placed on the heating table 6. Then, in the same process as the process described in the second embodiment, the wafer 10 is loaded into the wafer processing chamber 15 and a desired process is performed, and then the wafer 10 is transferred to the load lock chamber 1 again. .

As described above, in the semiconductor manufacturing apparatus configured as in the fifth embodiment, as in the above-described respective embodiments, almost no fine foreign matter is present on the wafer 10 after the process treatment. Wafer 1 because it is not formed
It is possible to provide a semiconductor device with few defects in the pattern formed on the substrate. Further, as an effect peculiar to the fifth embodiment, foreign matter on the wafer 10 is removed before the wafer 10 is loaded into the load lock chamber 1. And
Since the wafer 10 is carried into the load lock chamber 1 while maintaining the cleaned state without exposing the wafer 10 to the outside air by the sealing wall 37, the step of removing foreign matters on the wafer 10 by the heating table 6 can be performed in a short time. Can be done efficiently.

In the fifth embodiment, the sealing wall 3
Although 7 is provided on the load lock chamber 1 side, the sealing wall 37 may be provided on the substrate storage case 23 side. Even when the gate valve 3 and the door 25 are provided on the side surfaces of the load lock chamber 1 and the substrate storage case 23 as in the fourth embodiment, the sealing wall 37 is installed in the fifth embodiment. You can Then, also in these cases, the same effect as that of the fifth embodiment is obtained.

It should be noted that the present invention is not limited to the above-described embodiments, and each embodiment may be appropriately modified within the scope of the technical idea of the invention, in addition to what is suggested in each embodiment. That is clear. Also, the number of the above-mentioned constituent members,
The position, shape, etc. are not limited to those in the above-described embodiment, and can be any number, position, shape, etc. suitable for carrying out the present invention.

[0071]

Since the present invention is constituted as described above, a method of manufacturing a semiconductor device having a small particle size and causing a pattern defect on a substrate such as a wafer which has been subjected to a process treatment and having a small particle diameter. , A semiconductor manufacturing apparatus, a load lock chamber, a substrate storage case, and a stocker can be provided.

[Brief description of drawings]

FIG. 1 is a schematic diagram of a semiconductor manufacturing apparatus showing a first embodiment of the present invention.

FIG. 2 is a schematic state diagram showing the state of foreign matter on the surface of a wafer manufactured by the semiconductor manufacturing apparatus of FIG.

FIG. 3 is a schematic graph showing the relationship between the particle size and the number of foreign particles on the surface of a wafer manufactured by the semiconductor manufacturing apparatus of FIG.

FIG. 4 is a schematic diagram of a semiconductor manufacturing apparatus showing a second embodiment of the present invention.

FIG. 5 is a schematic diagram of a semiconductor manufacturing apparatus showing a third embodiment of the present invention.

FIG. 6 is a schematic diagram of a semiconductor manufacturing apparatus showing a fourth embodiment of the present invention.

7 is a schematic diagram showing the vicinity of a substrate storage case and a stocker in the semiconductor manufacturing apparatus of FIG.

FIG. 8 is a schematic diagram of a semiconductor manufacturing apparatus showing a fifth embodiment of the present invention.

FIG. 9 is a schematic view showing a conventional semiconductor manufacturing apparatus.

[Explanation of symbols]

1 load lock chamber, 3 gate valve (second gate valve), 4 gate valve (first gate valve), 6 heating table, 7 purge line,
8, 18 Vacuum exhaust system, 10 wafers (substrate), 11 cassettes, 15 wafer processing chamber (substrate processing chamber), 16 wafer holding table, 20 air curtain, 23 substrate storage case, 23a port, 25 door, 26 filter, 26a Engagement part, 30 Stocker (gas supply device), 30
a shelf, 32 valves, 32a protrusion,
35 pipe part, 36 gas outflow part, 37 sealing wall.

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 5F031 CA02 CA05 DA01 DA09 DA17                       EA14 EA18 FA01 FA03 FA07                       FA11 FA15 JA08 JA46 MA11                       MA15 NA02 NA04 NA07 NA15                       NA17 PA23

Claims (17)

[Claims] 1. A method of manufacturing a semiconductor device, comprising: a decompressing step of decompressing a load lock chamber after the substrate is loaded into the load lock chamber, wherein the substrate is placed on a heating table in the load lock chamber. And a heating step of heating the substrate by the heating table, the method for manufacturing a semiconductor device. 2. The method of manufacturing a semiconductor device according to claim 1, further comprising a removing step of removing foreign matter attached to the substrate before the substrate is carried into the load lock chamber. 3. The method of manufacturing a semiconductor device according to claim 2, wherein the removing step is a step of removing foreign matter attached to the substrate with an air curtain. 4. The manufacturing of a semiconductor device according to claim 2, wherein the removing step is a step of removing foreign matter adhering to the substrate in a substrate storage case holding the substrate therein. Method. 5. The heating temperature of the substrate in the heating step is set to 80 to 150 degrees.
A method of manufacturing a semiconductor device according to claim 4. 6. A load lock chamber, which is arranged in parallel in a substrate processing chamber for processing a substrate via a first gate valve and is capable of adjusting the pressure in the chamber to be equal to the pressure in the substrate processing chamber. A load-lock chamber comprising a single or a plurality of substrates and a heating table for heating the substrates. 7. The load lock chamber according to claim 6, wherein a cassette for accommodating a plurality of the substrates is formed so as to be carried in and out of the chamber. 8. A second device for loading / unloading the substrate into / from the room.
7. The load lock chamber according to claim 6, further comprising a gate valve, wherein an air curtain is installed in the vicinity of the outdoor side of the second gate valve. 9. A second device for loading / unloading the substrate into / from the room.
7. The gate valve according to claim 6, wherein the second gate valve is provided at a position facing a door of a substrate storage case that internally holds a cassette that stores a plurality of the substrates. Item 9. The load lock chamber according to any one of items 8. 10. The load lock chamber according to claim 9, wherein the substrate storage case is formed so that a cleaning gas for cleaning the surface of the substrate can be introduced from the outside. 11. The peripheral region of the second gate valve and the door is formed so as to be hermetically sealed when the second gate valve and the door of the substrate housing case are opposed to each other. The load lock chamber according to claim 9 or 10. 12. A semiconductor manufacturing apparatus comprising the load lock chamber according to any one of claims 6 to 11. 13. A substrate storage case for internally holding a cassette for storing a plurality of substrates, comprising a port capable of introducing a cleaning gas for cleaning the surface of the substrate from the outside. Storage case. 14. The engagement, wherein the port engages with a filter capable of introducing the cleaning gas and a valve provided in a gas supply device for supplying the cleaning gas to restrict the discharge of the cleaning gas. 14. The substrate accommodating apparatus according to claim 13, wherein the valve is opened by placing the cleaning gas on the gas supply device, and the cleaning gas is introduced into the inside through the filter. Case. 15. The substrate storage case according to claim 14, wherein the gas supply device is provided in a stocker. 16. A stocker having a shelf for mounting and storing a substrate storage case for holding a cassette for storing a plurality of substrates therein, wherein the substrate storage case is mounted on the shelf. A stocker, wherein a purifying gas for purifying the surface of the substrate in the substrate storage case is supplied into the substrate storage case. 17. A pipe section for guiding the cleaning gas to the mounting surface side of the substrate storage case, and a valve that opens in conjunction with the mounting of the substrate storage case. The stocker according to 16.