JPH11354514A - Cluster tool device and film formation method - Google Patents

Cluster tool device and film formation method

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Publication number
JPH11354514A
JPH11354514A JP16080098A JP16080098A JPH11354514A JP H11354514 A JPH11354514 A JP H11354514A JP 16080098 A JP16080098 A JP 16080098A JP 16080098 A JP16080098 A JP 16080098A JP H11354514 A JPH11354514 A JP H11354514A
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chamber
film
drying
object
processed
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JP16080098A
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Japanese (ja)
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Koichiro Saga
幸一郎 嵯峨
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Sony Corp
ソニー株式会社
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Abstract

PROBLEM TO BE SOLVED: To remove contamination after cleaning and drying and improve the cleanliness of film formation surface by providing a cleaning/drying chamber, a removing chamber, a film forming chamber, and a common transfer chamber which is communicated in common with the removing chamber and film forming chamber, connects them with each other and blocks them as well, and carry in/out an object to be processed.
SOLUTION: This cluster tool device 1 is provided with a common transfer chamber 4 formed in a shape of a hexagonal container in its center. Around the common transfer chamber 4, a first cassette chamber 5 and a second cassette chamber 6 as a wafer take-out port, a chamber 10 for removing organic substance, a first film forming chamber 7, a second film forming chamber 8, and a third film forming chamber 9 are connected respectively with it through gate valves 11 to 16 which are provided in a manner to be opened/closed. Further, a single tank type cleaning/drying device 2 is directly connected with the chamber 10 for removing organic substance on the opposite side thereof to the common transfer chamber 4 for example. Thus, the contamination on the interface between an object to be processed and a growth film can be eliminated, permitting the formation of high-quality thin film.
COPYRIGHT: (C)1999,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、例えば半導体ウエハに異なる一連の処理を行う複数の処理室を集合させて結合したクラスターツール装置に係わる。 The present invention relates is related to the cluster tool apparatus coupled by a set of a plurality of processing chambers for performing a series of processes different semiconductor wafer, for example.

【0002】 [0002]

【従来の技術】一般に、半導体装置にあっては、最近の高密度化、高集積化の要請に応じて、極薄かつ高品質なポリシリコン膜、窒化シリコン膜、酸化シリコン膜、チタン膜、コバルト膜、酸化タンタル膜等が要求されている。 In general, in the semiconductor device, the recent high density, the request of high integration, very thin, high-quality polysilicon film, a silicon nitride film, a silicon oxide film, a titanium film, cobalt film, tantalum oxide film or the like is required. このように薄膜形成及び成長の技術を応用する半導体装置の製造プロセスでは、半導体の結晶表面の残留不純物が作製される半導体装置の品質に極めて大きな影響を及ぼす。 In a manufacturing process of a semiconductor device thus applying the technology of the thin film formation and growth, very large influence on the quality of the semiconductor device residual impurities of the semiconductor crystal surface is prepared.

【0003】例えばシリコン結晶表面の場合、その表面に存在する自然酸化膜、有機汚染物、重金属等の残留不純物は、薄膜ゲート酸化膜の高精度の制御を困難にしたり、絶縁耐圧などの電気特性の劣化を招来する。 [0003] For example, in the case of silicon crystal surface, the natural oxide film existing on the surface, organic contaminants, residual impurities such as heavy metals is or difficult highly precise control of the thin gate oxide film, the electrical properties such as dielectric strength to lead to the deterioration. また、 Also,
メタルオーミックコンタクトの作製において、直列抵抗の増加や整流特性の劣化、窒化シリコン膜の膜厚ばらつきといった、プロセス阻害要因や素子性能低下要因として働く。 In the preparation of the metal ohmic contact, the deterioration of the growth and the rectification characteristics of the series resistance, such as variation in film thickness of the silicon nitride film serves as a process inhibiting factors and device performance degradation factor.

【0004】従って、成膜処理前における半導体ウエハの管理も細心の注意を払わなければならず、成膜処理前においてウエハ表面に付着している汚染物を、洗浄処理等により効率的に除去する技術が、半導体ウエハから作製される半導体装置の電気的な欠陥の低減を図るために重要になっている。 [0004] Thus, the management of the semiconductor wafer before the film forming process must also pay close attention, contaminants adhering to the wafer surface before the film forming process, efficiently removed by cleaning or the like technology has become important to reduce the electrical defects of a semiconductor device manufactured from the semiconductor wafer.

【0005】前述の洗浄処理の手段としては、乾式処理と湿式処理の2つがあるが、乾式処理は未だ研究段階で実用化が充分確立されておらず、実際の製造ラインでは一般に湿式処理が多く採用されている。 [0005] As the aforementioned cleaning process unit, there are two dry processing and wet processing, dry processing has not been put into practical use well established in yet research phase, generally wet processing often in the actual production line It has been adopted. この湿式処理の手段としては、例えば過酸化水素、硫酸−過酸化水素、 As a means for this wet treatment, such as hydrogen peroxide, sulfuric acid - hydrogen peroxide,
硝酸、水酸化アンモニウム−過酸化水素、塩酸−過酸化水素、フッ酸等の化学薬品水溶液が使用される。 Nitrate, ammonium hydroxide - hydrogen peroxide, hydrochloric acid - hydrogen peroxide, is a chemical solution such as hydrofluoric acid. 最近では、フッ酸−過酸化水素やオゾン添加超純水等が使用されるようになってきている。 In recent years, hydrofluoric acid - hydrogen peroxide and ozone added ultrapure water and the like have come to be used.

【0006】しかしながら、湿式処理の最後には、基板表面を乾燥させる必要があり、この乾燥方式としては、 However, at the end of the wet treatment, it is necessary to dry the substrate surface, as the drying method,
遠心力により水を除去するスピン乾燥法と、イソプロピルアルコールに代表される有機溶剤蒸気による乾燥手段が一般的に用いられている。 Spin drying method to remove water by centrifugal force, drying means with an organic solvent vapor typified by isopropyl alcohol are generally used. ここで、スピン乾燥法では、小さな水玉が最後まで乾燥しきれずに残留するいわゆるウォーターマークと呼ばれる水しみが残留することが多く、洗浄後にタングステンシリサイド膜の成長に続いてドライエッチングを行ったときに、このウォーターマークの部分がエッチングマスクとなり、エッチング残渣となることがある。 Here, when the spin drying method, subjected to dry etching small waterdrop is often water stains so-called water mark remaining without being completely dried to the end remains, after washing following the growth of the tungsten silicide film , the portion of this watermark serves as an etching mask, it may be an etching residue.

【0007】そこで、最近、イソプロピルアルコールに代表される有機溶剤蒸気による乾燥手段が好んで使用されるようになってきている。 [0007] Therefore, recently, an organic solvent vapor due to drying means, typified by isopropyl alcohol has come to be used prefers.

【0008】一方、洗浄後、次のウエハ処理装置までのウエハ搬送中に、クリーンルーム内の空気中に存在する有機ガスや、プラスチックの搬送ボックスから放出される有機ガスがウエハ表面に吸着する。 On the other hand, after washing, during wafer transfer until the next wafer processing apparatus, and an organic gas present in the air in the clean room, organic gases released from the transport box plastic is adsorbed on the wafer surface. この有機ガスは、 The organic gas,
ウエハをクリーンルーム内の空気にさらす又はプラスチックケース内に保管しておくだけでも、極めて短時間の内にウエハ表面に吸着する。 Wafer even only keep a in air exposure or plastic case in the clean room, is adsorbed on the wafer surface within a very short time.

【0009】洗浄乾燥後においてもウエハ表面に有機汚染物質が残っていると、膜の密着性が低下したり、膜厚の制御が良好に行えない。 [0009] Organic contaminants on the wafer surface even after washing and drying remains, adhesiveness is lowered in the film, can not satisfactorily perform the control of the film thickness.

【0010】このようにウエハ搬送中に有機物が吸着するのを防止するため、搬送ボックスからの放出ガスを少なくする、不活性ガスを充填した密閉ボックスで搬送する、洗浄機と成膜装置を直接結合させて搬送させる等の対策が提案されている。 [0010] Since the organic matter in this way the wafer transfer is prevented from adsorption, reducing the emission gas from the conveying box and transported in a sealed box filled with an inert gas, the washer and the film forming apparatus directly measures such as to transport coupled to form have been proposed.

【0011】 [0011]

【発明が解決しようとする課題】しかしながら、搬送中での有機物の吸着を防止したとしても、乾燥に使用されるイソプロピルアルコール等の有機物質が洗浄乾燥中に吸着してしまうと、成膜工程に悪影響を及ぼすことになる。 [SUMMARY OF THE INVENTION However, even prevent the adsorption of organic matter in the transport, the organic substances such as isopropyl alcohol which is used for drying will be adsorbed in the washing and drying, the film-forming process It will be adversely affected.

【0012】従って、品質の良好な極薄膜を生産性よく成膜できる技術が充分には開発されていないのが現状である。 Accordingly, the sufficient technology that can produce good deposition good ultrathin film quality has not yet been developed.

【0013】上述した問題の解決のために、本発明においては、洗浄乾燥後の汚染物を除去して、成膜面の清浄度を高めて品質の良好な成膜を行うことができるクラスターツール装置及び成膜方法を提案するものである。 [0013] In order to solve the above problems, in the present invention, to remove contaminants after washing and drying, the cluster tool to increase the cleanliness of the deposition surface can be performed better deposition quality it is to propose an apparatus and film forming method.

【0014】 [0014]

【課題を解決するための手段】本発明のクラスターツール装置は、被処理体を洗浄し、洗浄前に被処理体の表面に付着している汚染及び不要な膜を除去し、被処理体を乾燥させる洗浄乾燥室と、洗浄乾燥室において洗浄中及び乾燥中に被処理体の表面に吸着した有機物を含む汚染物を除去する除去処理室と、除去処理室で有機物が除去された被処理体の表面に成膜処理を施す成膜処理室と、 Means for Solving the Problems] cluster tool apparatus of the present invention, washing the object to be processed, adhering to the surface of the object to be processed are contaminated and removal of the unnecessary film before washing, the object to be processed and washing and drying chamber for drying, during washing in the washing and drying chamber and during the drying and removal process chamber to remove contaminants containing the adsorbed organic matter on the surface of the object, the object to be processed which organic matter has been removed by the removal processing chamber and the deposition treatment chamber for performing a film forming process on the surface of,
除去処理室と成膜処理室とに共通に連通されかつ遮断可能に連結され、被処理体の搬入及び搬出を行う共通搬送室とを備えたものである。 Removal processing chamber and in communication with the common and deposition treatment chamber and can be shut off to be connected, in which a common transfer chamber for loading and unloading of the object.

【0015】本発明の成膜方法は、洗浄中及び乾燥中に被処理体の表面に吸着した有機物を含む汚染物を除去した後、大気に曝さずに成膜処理を行うものである。 The film forming method of the present invention, after removal of the contaminants including the adsorbed organic matter on the surface of the object to during washing and drying, is performed a film forming process without being exposed to the atmosphere.

【0016】上述の本発明のクラスターツール装置によれば、洗浄乾燥室において洗浄中及び乾燥中に被処理体の表面に吸着した有機物を含む汚染物を、除去処理室で除去して被処理体の表面を清浄化することができる。 According to the above-described cluster tool system of the present invention, contaminants comprising organic substances adsorbed on the surface of the workpiece during the during the washing and drying in a washing drying chamber, is removed by removing the process chamber the workpiece it is possible to clean the surface of. また、各処理室間の被処理体の搬送は、除去処理室と成膜処理室とに共通に連通されかつ遮断可能に連結された共通搬送室を介して行われるため、この間の被処理体表面の汚染を抑制することができる。 The transport of the object between the processing chambers, to be done via a common transfer chamber connected to be communicated with and shut off in common to the removal processing chamber and the film formation treatment chamber, during which the object to be processed it is possible to suppress the contamination of the surface.

【0017】上述の本発明の成膜方法によれば、被処理体の表面に吸着した有機物を含む汚染物を除去した後、 According to the film forming method of the invention described above, after removal of the contaminants including the adsorbed organic matter on the surface of the object,
大気に曝さないで成膜処理を行うので、被処理体の表面を清浄化した状態で成膜を行うことができる。 Since the film deposition process without being exposed to the air, it is possible to perform film formation while cleaning the surface of the object.

【0018】 [0018]

【発明の実施の形態】本発明は、被処理体を洗浄し、洗浄前に被処理体の表面に付着している汚染及び不要な膜を除去し、被処理体を乾燥させる洗浄乾燥室と、洗浄乾燥室において洗浄中及び乾燥中に被処理体の表面に吸着した有機物を含む汚染物を除去する除去処理室と、除去処理室で有機物が除去された被処理体の表面に成膜処理を施す成膜処理室と、除去処理室と成膜処理室とに共通に連通されかつ遮断可能に連結され、被処理体の搬入及び搬出を行う共通搬送室とを備えたクラスターツール装置である。 DETAILED DESCRIPTION OF THE INVENTION The present invention provides washing the object to be processed, adhering to the surface of the object to be processed are contaminated and removing unnecessary film before washing, the washing and drying chamber to dry the object to be processed a removal processing chamber for removing contaminants comprising the adsorbed organic matter on the surface of the workpiece during the during the washing and drying in the washing and drying chamber, the film formation process on the surface of the object which organic matter has been removed by the removal processing chamber a deposition treatment chamber for performing, communicated with the common and removal processing chamber and the film formation treatment chamber and can be shut off to be connected is the cluster tool apparatus that includes a common transfer chamber for loading and unloading of the workpiece .

【0019】また本発明は、上記クラスターツール装置において、除去処理室は、被処理体を加熱する加熱ヒータを有して成る構成とする。 [0019] The present invention, in the cluster tool apparatus, removal processing chamber has a structure comprising a heater for heating the object to be processed.

【0020】また本発明は、上記クラスターツール装置において、除去処理室は、被処理体に紫外線を照射する手段と、オゾンガスを供給する手段とを有して成る構成とする。 [0020] The present invention, in the cluster tool apparatus, removal processing chamber, means for irradiating ultraviolet rays onto the object, a configuration comprising a means for supplying ozone gas.

【0021】本発明は、洗浄中及び乾燥中に被処理体の表面に吸着した有機物を含む汚染物を除去した後、大気に曝さずに成膜処理を行う成膜方法である。 [0021] The present invention is, after removal of the contaminants including the adsorbed organic matter on the surface of the object to during washing and drying, a film forming method for performing a film forming process without being exposed to the atmosphere.

【0022】図1は本発明の一実施の形態として本発明に係るクラスターツール装置の概略構成図(平面図)を示す。 [0022] Figure 1 shows a schematic diagram of a cluster tool apparatus according to the present invention as one embodiment of the present invention (plan view). 本実施の形態においては、被処理体として半導体ウエハWを用い、この半導体ウエハWの表面にシリコン窒化膜を減圧CVD(化学的気相成長)処理により成膜する場合を例にとって説明する。 In this embodiment, a semiconductor wafer W as an object to be processed, the case of forming this silicon nitride film on the surface of the semiconductor wafer W under reduced pressure CVD (chemical vapor deposition) process as an example.

【0023】図1に示すように、このクラスターツール装置1は、例えばアルミニウムから成る6角形の容器状になされた共通搬送室4をその中心に有して成り、共通搬送室4の周辺に、ウエハ取り出し口として第1カセット室5及び第2カセット室6、有機物除去処理室10、 As shown in FIG. 1, the cluster tool apparatus 1 includes, for example, the common transfer chamber 4 has been made to the hexagonal container shape formed of aluminum having in its center, around the common transfer chamber 4, first cassette chamber 5 and a second cassette chamber 6 as a wafer outlet, organic substance removing treatment chamber 10,
第1の成膜処理室7、第2の成膜処理室8及び第3の成膜処理室9をそれぞれ開閉可能になされたゲートバルブ11〜16を介して連結されている。 The first deposition treatment chamber 7 are connected via a second film deposition process chamber 8 and the third gate valve 11 to 16 are respectively openably made the deposition treatment chamber 9. また、有機物除去処理室10の共通搬送室4に対して反対側には例えば単槽式の洗浄乾燥装置2が直接接続されている。 Also, cleaning and drying apparatus 2 is on the opposite side for example of the single-vessel to the common transfer chamber 4 of the organic substance removing treatment chamber 10 are directly connected.

【0024】単槽式の洗浄乾燥装置2は、複数の酸及びアルカリ水溶液による処理、純水によるリンス、イソプロピルアルコール(IPA)による乾燥処理を順に行える構成の装置である。 The cleaning and drying apparatus 2 single-tank, the processing by the plurality of acid and alkali aqueous solution, an apparatus of the pure water by rinsing sequentially performed comprises a dry process with isopropyl alcohol (IPA).

【0025】有機物除去処理室10は、洗浄乾燥中に吸着したIPA等の有機物を含む汚染物を加熱や紫外線照射及びオゾンガス供給によって完全に分離除去する除去処理室である。 The organic substance removing treatment chamber 10 is a removal process chamber be completely separated off by heating or UV irradiation and ozone gas supply contaminants comprising organic substances such as IPA adsorbed during the washing and drying. この有機物除去処理室の一形態の概略構成図を図2に示す。 It shows a schematic diagram of an embodiment of the organic substance removing treatment chamber in FIG.

【0026】図2に示す有機物除去処理室10は、例えば全面が炭化シリコンでコートされたカーボン製の加熱ヒータ20が埋め込まれており、載置台21上に載置した半導体ウエハWを所定の温度、例えば200℃程度に加熱し得るようになっている。 The organic substance removing treatment chamber 10 shown in FIG. 2, for example, the entire surface of the heater 20 made of carbon coated is embedded in silicon carbide, the semiconductor wafer W mounted on the mounting table 21 a predetermined temperature , and it is able to heat, for example, about 200 ° C..

【0027】共通搬送室4内には、内部に取り込んだ半導体ウエハWの位置決めを行う回転位置決め機構と、半導体ウエハWを保持した状態で屈伸及び回転可能になされた多関節アーム機構により成る搬送アーム3が配置されており、これを屈伸、回転させることによって各室間に渡ってウエハを搬入・搬出しうるようになっている。 [0027] The common transfer chamber 4, the transfer arm comprising a rotational positioning mechanism for positioning the semiconductor wafer W taken inside, the articulated arm mechanism is adapted to allow bending and rotation while holding the semiconductor wafer W 3 is arranged, bending it, so that the can loading and unloading the wafer over between chambers by rotating.
この共通搬送室4も不活性ガス、例えば窒素ガスの供給と、真空引きが可能になされている。 The common transfer chamber 4 is also an inert gas, the supply of for example nitrogen gas, which is adapted to allow vacuum.

【0028】続いて、本実施の形態のクラスターツール装置1の動作について説明する。 [0028] Next, the operation of the cluster tool apparatus 1 of this embodiment. まず、図1に基づいて半導体ウエハWに対する処理の全体の流れから説明する。 First, a description from the overall flow of processing for the semiconductor wafer W on the basis of FIG. 最初に、共通搬送室4を含む各成膜処理室7,8, First, the deposition treatment chamber 7, 8 include a common transfer chamber 4,
9は、未使用時にはベース圧として例えば5×10 -6 9, non example 5 × 10 -6 as the base pressure at the time of use T
orr程度の高い真空度に維持されて、自然酸化膜の形成を防止している。 It is maintained at orr about high vacuum, thereby preventing the formation of a natural oxide film.

【0029】次に、洗浄乾燥装置2においてIPA蒸気により乾燥した半導体ウエハWを、一枚ずつゲートドア17を介して有機物除去処理室10内へ搬入し、この有機物除去処理室10内を密閉して上述したベース圧まで真空引きする。 Next, the semiconductor wafer W is dried by IPA vapor in cleaning and drying device 2, via a one by one gate door 17 and carried into the organic substance removal treatment chamber 10, to seal the organic substance removing treatment chamber 10 evacuated to above base pressure. そして、半導体ウエハWを加熱又は紫外線照射及びオゾンガス供給することにより、半導体ウエハW表面に吸着しているIPA等の有機物を脱離又は直接分解させて除去する。 Then, by heating or UV irradiation and ozone gas supplying semiconductor wafers W, the organic matter such as IPA adsorbed on the semiconductor wafer W surface is decomposed desorption or directly removed.

【0030】脱離した有機物を充分排気した後に、ゲートバルブ11を開にして、予めベース圧に維持されている共通搬送室4内の搬送アーム3を伸ばして半導体ウエハWを一枚取り出し、これを回転位置決め機構18により半導体ウエハWのオリエンテーションフラットを検出することにより位置合わせする。 [0030] After thorough exhaust desorbed organics, the gate valve 11 is opened, take out a sheet of semiconductor wafer W by extending the transfer arm 3 of the common transfer chamber 4 which are maintained in pre-base pressure, which aligning by detecting the orientation flat of the semiconductor wafer W by the rotational positioning mechanism 18. 位置合わせ後の半導体ウエハWは、再度搬送アーム3を用いて開状態に成されたゲートバルブ13或いは16を介して予めベース圧になされている第1の成膜処理室7或いは第2の成膜処理室8内に導入される。 Semiconductor wafer W after alignment, a first deposition treatment chamber 7 or the second formation that have been made in advance based pressure through a gate valve 13 or 16 has been made in an open state by using the transfer arm 3 again It is introduced into the film processing chamber 8. このように最初の成膜処理を行う成膜処理室として、2つの成膜処理室7,8を設けた理由は、成膜処理に要する時間に鑑みてスループットを向上させるためである。 As deposition treatment chamber for performing this way the first film forming process, the reason for providing the two deposition treatment chamber 7 and 8, in order to improve the throughput in view of the time required for the film forming process. ここでCVD処理により所定の温度で窒化シリコン膜が成膜されることになる。 Here the silicon nitride film at a predetermined temperature is to be deposited by CVD process.

【0031】尚、必要に応じて、さらに続いて第3の成膜処理室9において半導体ウエハWに成膜処理を行う。 [0031] Incidentally, if necessary, a film forming process on a semiconductor wafer W in the third deposition treatment chamber 9 further followed.

【0032】次に、図2を参照して有機物除去処理について説明する。 Next, a description will be given with reference to organic substance removal treatment to FIG. 図2は、図1に示した有機物除去処理室10の構成の一形態の一部内部の構成を示す側面図である。 Figure 2 is a side view showing the internal structure part of a form of construction of the organic substance removing treatment chamber 10 shown in FIG.

【0033】この有機物除去処理室10は、その室内に、半導体ウエハWが載置される載置台21及びこの載置台21の下に半導体ウエハWの加熱を行う加熱ヒータ20が設けられ、また上方には紫外線照射手段として紫外線光源(水銀ランプ)22が設けられている。 [0033] The organic substance removing treatment chamber 10 has on its interior, a heater 20 for heating the semiconductor wafer W is provided under the mounting table 21 and the mounting table 21 on which the semiconductor wafer W is placed, also above ultraviolet light source (mercury lamp) 22 is provided as the ultraviolet light irradiation means to. 紫外線光源22と載置台との間には、透過板23が設けられ、 Between the mounting table and the ultraviolet light source 22, the transmission plate 23 is provided,
紫外線を透過すると共に半導体ウエハWの加熱により発生するガスから紫外線光源22を遮蔽する。 Shielding the ultraviolet light source 22 from the gas generated by heating of the semiconductor wafer W with transmits ultraviolet rays.

【0034】有機物除去処理室10の前後には、図1に示した半導体ウエハWの出し入れを行うゲートバルブ1 [0034] before and after the organic substance removing treatment chamber 10, the gate valve 1 for loading and unloading of the semiconductor wafer W shown in FIG. 1
1及びゲートドア17が接続されている。 1 and gate door 17 is connected. また、透過板23の位置のやや下にオゾンガス供給管25が接続され、オゾンガス供給管25とは反対側の下部に排気管2 Further, ozone gas supply pipe 25 is connected to a slightly lower position the transmission plate 23, the exhaust pipe 2 to the bottom of the opposite side of the ozone supply pipe 25
4が接続され、排気管24の他端は真空ポンプ26に接続されている。 4 is connected, the other end of the exhaust pipe 24 is connected to a vacuum pump 26. これにより、有機物除去処理室10の室内の透過板23より下の部分にオゾンガスを流すことができる。 Thus, it is possible to flow the ozone gas in the portion below the transmission plate 23 of the chamber of the organic substance removing treatment chamber 10.

【0035】この有機物除去処理室10により、例えば次のように有機物の処理を行う。 [0035] The organic substance removing treatment chamber 10, for example, performs the processing of organic matter as follows. 載置台21上に載置された半導体ウエハWは、例えば加熱ヒータ20により所定の温度例えば200℃程度に加熱される。 Semiconductor wafer W placed on the mounting table 21 is, for example, heated to a predetermined degree of temperature, for example 200 ° C. by the heater 20. 或いは、オゾンガスを供給管25から供給しながら、上方に位置する紫外線照射手段の紫外線光源(水銀ランプ)22から例えば波長が254nmの紫外線UVを放出し、この紫外線は透過板23を透過して半導体ウエハWの表面に照射される。 Alternatively, while supplying an ozone gas from a supply pipe 25, by emitting an ultraviolet light source (mercury lamp) ultraviolet UV from 22 example wavelength 254nm ultraviolet light irradiation means located above, the ultraviolet rays transmitted through the transmission plate 23 semiconductor It is applied to the surface of the wafer W. この紫外線照射のエネルギーが、有機物とウエハ表面との結合エネルギー以上となることにより、有機物がウエハ表面から離脱し、真空ポンプ26の吸引力により排気管24から吸引されて排除される。 The energy of the ultraviolet irradiation, by the above coupling energy between organic matter and the wafer surface, organics are extracted from the wafer surface, it is eliminated is sucked from the exhaust pipe 24 by the suction force of the vacuum pump 26.

【0036】続いて、半導体ウエハWがゲートバルブ1 [0036] Then, the semiconductor wafer W is gate valve 1
1を介して共通搬送室4に搬送される。 It is conveyed to the common transfer chamber 4 via the 1. そして、アーム3によりゲートバルブ16を介して第1の成膜処理室7 The first deposition process chamber through a gate valve 16 by the arm 3 7
内の真空(例えば10 -7 Pa以上)を落とすことなく、 Without degrading the vacuum (e.g., 10 -7 Pa or more) of the inner,
第1の成膜処理室7内に搬入され、所定の圧力、温度で一定時間原料ガスを流して例えば窒化シリコン膜等の成膜が行われる。 Is carried into the first film forming treatment chamber 7, a predetermined pressure, film formation, for example, a silicon nitride film or the like by passing a predetermined time a raw material gas at temperature is performed.

【0037】そして、清浄度が維持された半導体ウエハW表面に成膜するため、第1の成膜処理室7内に原料ガスを導入すると、半導体ウエハW表面に成膜が開始される。 [0037] Then, for forming a film on the semiconductor wafer W surface cleanliness is maintained, the introduction of raw material gas into the first film forming process chamber 7, the film formation is started on the semiconductor wafer W surface.

【0038】ここで、実際に上述の有機物除去処理室1 [0038] Here, actually of the above-mentioned organic substance removal treatment chamber 1
0を備えたクラスターツール装置1によって洗浄乾燥後に有機物除去処理を行った半導体ウエハWに、窒化シリコン膜を成膜して、膜特性の測定・評価を行った。 The organic substance removing treatment on the semiconductor wafer W performed after washing and drying by a cluster tool apparatus 1 having a 0, by forming a silicon nitride film was measured and evaluated for film properties.

【0039】窒化シリコン膜の成膜の条件は、例えば以下の条件とすることができる。 The film formation conditions of the silicon nitride film may be, for example, with the following conditions. 尚、単位sccmは、標準状態における流量(cm 3 /分)を示す。 The unit sccm denotes the flow rate in standard conditions (cm 3 / min). 原料ガスの種類及び流量:NH 3 /SiH 2 Cl 2 =3 The raw material gas type and flow rate: NH 3 / SiH 2 Cl 2 = 3
00sccm/30sccm 雰囲気圧力 :50Pa程度 成膜温度 :680℃ 00sccm / 30sccm atmosphere pressure: 50Pa about the film-forming temperature: 680 ℃

【0040】また、比較のため、有機物除去処理を行わなかった他は、同一の条件で窒化シリコン膜を成膜した場合の成膜速度特性も測定した。 Further, for comparison, other not subjected to organic substance removal treatment, it was also measured deposition rate characteristic obtained by depositing a silicon nitride film under the same conditions.

【0041】有機物除去処理を行った半導体ウエハWに成膜した窒化シリコン膜について、その成膜速度特性を測定したところ、図3中実線に示すように、成膜開始までの潜伏時間が、図3中破線で示す上述の比較例の場合よりも短かった。 [0041] The deposited silicon nitride film on a semiconductor wafer W subjected to organic substance removal treatment, was measured for its film forming speed characteristics, as shown in solid line in FIG. 3, the latency to initiation deposition, Figure shorter than the case of the above-described comparative example illustrated in 3 the dashed line.

【0042】上述の本実施の形態のクラスターツール装置1によれば、分子レベルで清浄化された半導体ウエハW表面に対して成膜を行うことができるので、半導体ウエハW表面に直ちに核が成長する成膜、つまり成膜が開始されるまでの潜伏期間がゼロの成膜を実現することができる。 [0042] According to the cluster tool apparatus 1 of the present embodiment described above, it is possible to form a film against cleaned semiconductor wafer W surface at the molecular level, immediately nuclei grown semiconductor wafer W surface deposition, that is, latent time of film formation is started can be achieved deposition of zeros. また、成膜時における異常核成長の発生を防止することができる。 Further, it is possible to prevent the occurrence of abnormal nucleus growth during deposition. この結果、膜厚、膜質が均一な膜を形成することができるので、安定した成膜が可能になる。 As a result, since it is possible to film thickness, film quality to form a uniform film, allowing stable film formation.

【0043】また、洗浄乾燥後に残留するIPA等の有機物の有機物除去処理室10による除去効果を加熱脱離ガスクロマトグラフィー質量分析計により分析した。 [0043] Also, the removal effect of the organic substance removing treatment chamber 10 of organic material such as IPA remaining after washing dried and analyzed by thermal desorption gas chromatography mass spectrometer. 図4は、上述の有機物除去手段による有機物の除去効果を示す、有機物のガスクロマトグラムである。 Figure 4 shows the effect of removing organic matter by the above-mentioned organic substance removal means is a gas chromatogram of organic matter. 図4Aは、 FIG. 4A,
洗浄乾燥後のウエハ表面の有機物の状態を示し、図4B It shows the state of the organic matter of the wafer surface after cleaning and drying, Fig. 4B
は、有機物除去処理室10での処理後に分析したウエハ表面の有機物の状態を示すガスクロマトグラムである。 Is a gas chromatogram showing the state of the organic matter of the processed in the analyzed wafer surface in the organic substance removal treatment chamber 10.

【0044】この結果から、図4Aで観察されたIPA [0044] From this result, it was observed in FIG. 4A IPA
によるピークが、有機物除去処理後は殆ど観察されず、 Peak due to the after organic substance removing treatment is hardly observed,
IPAが除去されたことが分かる。 It can be seen that the IPA has been removed. 即ち、有機物除去処理室10で、IPAを始めとする有機物が確実に除去され、ウエハ表面が完全に分子レベルで清浄化されることが明らかである。 That is, in the organic substance removal treatment chamber 10, organic matter, including IPA is reliably removed, it is clear that the wafer surface is cleaned completely molecular level.

【0045】以上説明したように本実施の形態のクラスターツール装置1によれば、次のように優れた作用効果を発揮することができる。 [0045] According to the cluster tool apparatus 1 of the present embodiment as described above, it can exhibit excellent effects and advantages as follows. 有機物除去処理室10において、半導体ウエハW表面に付着した有機物を含む汚染物が除去されるので、半導体ウエハWの薄膜成長面が容易に清浄化され、かつその清浄面を保持した状態で所要の薄膜が成長される。 In organic substance removing treatment chamber 10, since contaminants including organic substances adhering to the semiconductor wafer W is removed, the thin film growth surface easily cleaned semiconductor wafer W, and the required while maintaining the clean surface thin film is grown. 従って、基板と成長膜との界面の汚染が抑えられた高品質の薄膜の形成が可能となり、これにより高性能の半導体装置を製造することができる。 Thus, the formation of high quality thin contamination of the interface between the substrate and the growing film is suppressed becomes possible, thereby making it possible to manufacture a high-performance semiconductor device.

【0046】また、洗浄乾燥装置2に接続された有機物除去処理室10と複数の成膜処理室7,8を共通搬送室4を中心として集合させて設けて、洗浄乾燥工程で吸着するIPA等の有機物を除去した半導体ウエハWを途中で大気に曝すことなく連続的に処理を行うようにしたので、品質及び電気的特性の良好な極薄CVD膜を膜厚の制御よく形成することが可能となる。 [0046] Also, the organic substance removing treatment chamber 10 is connected to the cleaning and drying apparatus 2 a plurality of deposition treatment chamber 7, 8 is provided by a set around the common transfer chamber 4, IPA or the like to adsorb at washing drying since the semiconductor wafer W in which the organic matter removal was performed continuously processed without exposure to the atmosphere on the way, it can be formed with good control of the thickness of a good ultrathin CVD film quality and electrical characteristics to become. さらに、極薄ゲート酸化膜の高精度の制御や、絶縁耐圧等の電気特性の向上、メタルオーミックコンタクトにおける直列抵抗の減少や整流特性の向上といった、様々な素子性能の向上と歩留まり向上が可能になる。 Moreover, very accurate control of the thin gate oxide film, improvement in electric characteristics such as dielectric breakdown voltage, such as improvements in reducing or rectifying characteristics of the series resistance in the metal ohmic contact, can be improved and yield improvement of various device performance in Become.

【0047】尚、上述の図1に示した実施の形態においては、洗浄乾燥装置部2と有機物除去処理室10とがゲートドア17を介して接続されていたが、これら洗浄乾燥装置部と有機物除去処理室とをそれぞれ別に共通搬送室に接続して、これらの間のウエハの移送を一旦共通搬送室を介して行う構成としても、上述の実施の形態と同様の効果を得ることができる。 [0047] In the embodiment shown in FIG. 1 described above, a washing and drying device portion 2 and the organic substance removing treatment chamber 10 was connected via a gate door 17, the organic substance removing these cleaning and drying apparatus section by connecting the processing chamber to separate the common transfer chamber, respectively, have a structure to perform through the once common transfer chamber transfer of wafers between them, it is possible to obtain the same effect as the above embodiment. この場合は、共通搬送室を介してウエハを移動させる分の手間が増えるが、クラスターツール装置を設置するスペースの都合上、洗浄乾燥装置部と有機物除去処理室とを連接して設けることが難しい場合に適している。 In this case, although minute effort to move the wafer is increased through the common transfer chamber, for convenience of space for installing a cluster tool apparatus, it is difficult to provide by concatenating the cleaning and drying apparatus unit and the organic substance removing treatment chamber It is suitable for the case.

【0048】本発明のクラスターツール装置及び成膜方法は、上述の実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲でその他様々な構成が取り得る。 The cluster tool apparatus and film forming method of the present invention is not intended to be limited to the embodiments described above, various arrangements without departing from the spirit and scope of the present invention can take.

【0049】 [0049]

【発明の効果】上述の本発明によれば、洗浄乾燥工程で吸着する有機物を除去したウエハ等被処理体を途中で大気に曝すことなく連続的に処理を行うため、被処理体の薄膜成長面が容易に清浄化され、かつその清浄面を保持した状態で所要の薄膜を成長することができる。 Effects of the Invention According to the invention described above, for performing continuously processed without exposure to the air the wafer or the like object to be processed to remove the organic substances adsorbed by the washing and drying step in the middle, thin film growth of the target object surface can be easily cleaned, and can be grown required thin film while maintaining the clean surface. これにより、被処理体と成長膜との界面の汚染が抑えられた高品質の薄膜の形成が可能となり、品質及び電気的特性の良好な極薄膜を膜厚の制御よく形成することができる。 This enables formation of high quality thin interfacial contamination is suppressed between the growth film and object, it can be formed with good control of the thickness of a good ultrathin film quality and electrical characteristics.
従って、様々な素子性能の向上と歩留まり向上が可能になり、高性能の半導体装置を提供することができる。 Therefore, it becomes possible to improve the yield improvement of various device performance, it is possible to provide a high-performance semiconductor device.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明に係るクラスターツール装置の一実施の形態の概略構成図(平面図)である。 A 1 is a schematic diagram of an embodiment of a cluster tool apparatus according to the present invention (plan view).

【図2】図1のクラスターツール装置の有機物除去処理室の構成を示す図である。 2 is a diagram showing the structure of the organic substance removing treatment chamber of the cluster tool apparatus of Figure 1.

【図3】SiN膜の成膜時間と膜厚との関係を、本発明のクラスターツール装置による成膜方法と従来の成膜方法で比較した図である [3] The relationship between film formation time and the film thickness of the SiN film, is a graph comparing the film forming method of the conventional film deposition method of cluster tool apparatus of the present invention

【図4】有機物除去装置による有機物除去処理を行った効果を示すガスクロマトグラムである。 4 is a gas chromatogram showing the effects of performing the organic substance removing treatment by the organic substance removing device. A 洗浄乾燥直後のウエハ表面の吸着有機物を示すガスクロマトグラムである。 Is a gas chromatogram showing the adsorption organic substances on the wafer surface immediately after A cleaning and drying. B 有機物除去装置における処理の後のウエハ表面の吸着有機物を示すガスクロマトグラムである。 Is a gas chromatogram showing the adsorption organic substances on the wafer surface after treatment in the B organic removal device.

【符号の説明】 DESCRIPTION OF SYMBOLS

1…クラスターツール装置(半導体処理装置)、2…洗浄乾燥装置部、3…搬送アーム、4…共通搬送室、5… 1 ... cluster tool apparatus (semiconductor processing apparatus), 2 ... cleaning and drying device section, 3 ... transporting arm 4 ... common transfer chamber, 5 ...
第1カセット室、6…第2カセット室、7…第1の成膜処理室、8…第2の成膜処理室、9…第3の成膜処理室、10…有機物除去処理室、11,12,13,1 First cassette chamber, 6 ... second cassette chamber, 7 ... first deposition treatment chamber, 8 ... second deposition treatment chamber, 9 ... third deposition treatment chamber, 10 ... organic substance removing treatment chamber, 11 , 12,13,1
4,15,16…ゲートバルブ、17…ゲートドア、1 4,15,16 ... gate valve, 17 ... gate door, 1
8…回転位置決め機構、20…加熱ヒータ、21…載置台、22…紫外線光源(水銀ランプ)、23…透過板、 8 ... rotational positioning mechanism, 20 ... heater, 21 ... table, 22 ... ultraviolet light source (mercury lamp), 23 ... transmission plate,
24…排気管、25…オゾンガス供給管、26…真空ポンプ、W…半導体ウエハ 24 ... exhaust pipe, 25 ... ozone gas supply pipe, 26 ... vacuum pump, W ... semiconductor wafer

Claims (4)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 被処理体を洗浄し、洗浄前に該被処理体の表面に付着している汚染及び不要な膜を除去し、該被処理体を乾燥させる洗浄乾燥室と、 前記洗浄乾燥室において洗浄中及び乾燥中に前記被処理体の表面に吸着した有機物を含む汚染物を除去する除去処理室と、 前記除去処理室で有機物が除去された前記被処理体の表面に成膜処理を施す成膜処理室と、 前記除去処理室と前記成膜処理室とに共通に連通されかつ遮断可能に連結され、前記被処理体の搬入及び搬出を行う共通搬送室とを備えたことを特徴とするクラスターツール装置。 1. A washing the object to be processed, attached to the surface of the 該被 processed contamination and unnecessary film is removed and before washing, the washing and drying chamber for drying the 該被 processed, the washing and drying and removal processing chamber for removing contaminants the and during dry cleaning comprising the organic material adsorbed on the surface of the object to be processed in the chamber, the film forming process wherein the organic substance is removed by the removal processing chamber on a surface of the object to be processed a deposition treatment chamber for performing the communicated removal processing chamber and in common to said deposition treatment chamber and can be shut off to be connected, that a common transfer chamber for loading and unloading of the workpiece cluster tool apparatus according to claim.
  2. 【請求項2】 前記除去処理室は、前記被処理体を加熱する加熱ヒータを有して成ることを特徴とする請求項1 Wherein said removal processing chamber, according to claim 1, characterized by comprising a heater for heating the object to be processed
    に記載のクラスターツール装置。 Cluster tool apparatus according to.
  3. 【請求項3】 前記除去処理室は、前記被処理体に紫外線を照射する手段と、オゾンガスを供給する手段とを有して成ることを特徴とする請求項1に記載のクラスターツール装置。 Wherein the removal processing chamber, a cluster tool apparatus according to claim 1, comprising: means for irradiating ultraviolet rays to the object to be processed, characterized by comprising a means for supplying ozone gas.
  4. 【請求項4】 洗浄中及び乾燥中に被処理体の表面に吸着した有機物を含む汚染物を除去した後、大気に曝さずに成膜処理を行うことを特徴とする成膜方法。 4. After removal of contaminants containing the adsorbed organic matter to during washing and drying the surface of the object, deposition method and performing a film forming process without being exposed to the atmosphere.
JP16080098A 1998-06-09 1998-06-09 Cluster tool device and film formation method Pending JPH11354514A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000070666A1 (en) * 1999-05-14 2000-11-23 Tokyo Electron Limited Method and apparatus for processing
EP1122333A2 (en) * 2000-01-31 2001-08-08 Motorola, Inc. UV cure process and tool for low k film formation
WO2006016448A1 (en) * 2004-08-13 2006-02-16 Shin-Etsu Handotai Co., Ltd. Apparatus for evaluating semiconductor wafer
US7360546B2 (en) 2002-04-09 2008-04-22 Sharp Kabushiki Kaisha Cleaning apparatus for semiconductor wafer
JP2011222630A (en) * 2010-04-06 2011-11-04 Mitsubishi Electric Corp Manufacturing method for photovoltaic device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000070666A1 (en) * 1999-05-14 2000-11-23 Tokyo Electron Limited Method and apparatus for processing
EP1122333A2 (en) * 2000-01-31 2001-08-08 Motorola, Inc. UV cure process and tool for low k film formation
EP1122333A3 (en) * 2000-01-31 2003-10-29 Motorola, Inc. UV cure process and tool for low k film formation
US7360546B2 (en) 2002-04-09 2008-04-22 Sharp Kabushiki Kaisha Cleaning apparatus for semiconductor wafer
WO2006016448A1 (en) * 2004-08-13 2006-02-16 Shin-Etsu Handotai Co., Ltd. Apparatus for evaluating semiconductor wafer
JP2006054375A (en) * 2004-08-13 2006-02-23 Shin Etsu Handotai Co Ltd Evaluation apparatus of semiconductor wafer
US7525327B2 (en) 2004-08-13 2009-04-28 Shin-Etsu Handotai Co., Ltd. Apparatus for evaluating semiconductor wafer
JP2011222630A (en) * 2010-04-06 2011-11-04 Mitsubishi Electric Corp Manufacturing method for photovoltaic device

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