JP2011061149A - Common transport device, and processing system using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a common transport device capable of efficiently suppressing temperature rise of a transport mechanism for transporting a processing object. <P>SOLUTION: This common transport device with a plurality of processors 24A-24D each used for processing a processing object W connected to a peripheral part thereof includes: a transport vessel 28 brought into a vacuum atmosphere; a transport mechanism 46 arranged in the transport vessel, and made bendable and turnable for transporting the processing object; and heat reflection suppression surfaces 62, 64 arranged on a ceiling part 28A side and a bottom part 28B side of the transport vessel and along a region extending along a projection surface of a track on which the processing object held to at least the transport mechanism moves. Thus, the temperature rise of the transport mechanism for transporting the processing object is efficiently suppressed. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a processing system that performs a predetermined process on an object to be processed such as a semiconductor wafer, and a common transfer device used therefor.

  In general, in a semiconductor device manufacturing process, various types of thin film deposition processing, modification processing, oxidation diffusion processing, annealing processing, etching processing, and the like are sequentially performed on a semiconductor wafer. For example, taking a single-wafer processing system as an example, in order to perform these various processes, a plurality of processing apparatuses that can perform processing in succession are commonly connected to one common transport apparatus, so-called clusters. Making a mold processing system. In this processing system, the semiconductor wafer is transported between the processing devices using a transport mechanism provided in the common transport device, so that necessary processing is performed in each processing device each time. This is performed continuously and efficiently (for example, Patent Documents 1 and 2).

  An example of a conventional processing system comprising this type of cluster processing apparatus will be described with reference to FIG. As shown in FIG. 5, this processing system is configured by connecting four processing devices 4 </ b> A to 4 </ b> D via a gate valve G around one common transport device 2 having a hexagonal shape, for example. The common transfer device 2 is connected to a rectangular carry-in transfer device 8 via two load lock chambers 6A and 6B.

  Gate valves G are interposed in the connecting portions between the load lock chambers 6A and 6B and the common transfer device 2 and the carry-in transfer device 8, respectively. Further, for example, three introduction ports 10 for placing a cassette capable of accommodating a plurality of semiconductor wafers and an orienter 12 for aligning the semiconductor wafer W are connected to the carry-in side transfer device 8.

  In the carry-in side transfer device 8, a carry-in side transfer mechanism 14 that holds the semiconductor wafer W and is capable of bending, stretching, turning up and down, and linear movement is provided. In the common transfer apparatus 2, a transfer mechanism 16 having two arms 16A and 16B for holding the semiconductor wafer W is provided, and these arms 16A and 16B can be bent and stretched and turned. Here, for example, as described above, the semiconductor wafer W is subjected to predetermined processing corresponding to each of the processing apparatuses 4A to 4D while being transported by the transport mechanism 16 so as to walk over the processing apparatuses 4A to 4D. .

JP 2004-119635 A JP 2007-260624 A

  By the way, in the above-described conventional processing system, in each of the processing apparatuses 4A to 4D, the temperature of the semiconductor wafer W may reach 700 to 1100 ° C. depending on the processing mode. In such a case, if the high-temperature semiconductor wafer W is held and transferred by the transfer mechanism 16, the temperature of the transfer mechanism 16 itself rises considerably even if the transfer period is as short as about 5 to 10 seconds. There was a case.

  If the transfer mechanism 16 is heated excessively, the arms 16A and 16B of the transfer mechanism 16 themselves are thermally expanded to cause warpage, and the position accuracy when the semiconductor wafer is transferred is lowered, or the transfer mechanism 16 is driven. There have been problems such as deterioration of the timing belt for use or deterioration of the bearing for rotation causing malfunction. In this case, the surfaces of the arms 16A and 16B that hold the semiconductor wafer W are mirror-finished to suppress the temperature rise as much as possible, but this is not sufficient as a countermeasure.

  The present invention has been devised to pay attention to the above problems and to effectively solve them. The present invention is a common transport apparatus that can efficiently suppress a temperature rise of a transport mechanism that transports an object to be processed, and a processing system using the common transport apparatus.

  According to a first aspect of the present invention, in a common transfer apparatus in which a plurality of processing apparatuses for processing an object to be processed are connected to a peripheral portion, a transfer container in a vacuum atmosphere, and the process container provided in the transfer container Projection of a transport mechanism that can be bent and stretched to transport a body, and a trajectory on which the object to be processed that is held at least on the transport mechanism moves on the ceiling side and the bottom side of the transport container And a heat reflection suppressing surface provided along a region along the surface.

  As described above, in the common transfer apparatus in which a plurality of processing apparatuses for processing an object to be processed are connected to the periphery, the objects to be processed that are held at least by the transfer mechanism on the ceiling side and the bottom side of the transfer container. Since the heat reflection suppression surface is provided along the region along the projection plane of the moving locus, heat can be efficiently radiated from the object to be processed to the heat reflection suppression surface, and as a result, the object to be processed It is possible to efficiently suppress the temperature rise of the transport mechanism that transports.

  The invention according to claim 8 is a processing system for processing an object to be processed, and is openable and closable at the common transfer device according to any one of claims 1 to 7 and a peripheral portion of the common transfer device. And a plurality of processing devices connected to each other via a gate valve configured to perform processing on the object to be processed.

According to the common transport device and the processing system using the same according to the present invention, the following excellent operational effects can be exhibited.
In a common transfer apparatus in which a plurality of processing apparatuses for processing an object to be processed are connected to a peripheral part, a trajectory along which the object to be processed held on at least the transfer mechanism on the ceiling side and the bottom side of the transfer container moves. Since the heat reflection suppression surface is provided along the region along the projection surface, heat can be efficiently radiated from the object to be processed to the heat reflection suppression surface, and as a result, conveyance for conveying the object to be processed. The temperature rise of the mechanism can be efficiently suppressed.
Therefore, since it is possible to suppress thermal expansion of the transport mechanism, it is possible to increase the positional accuracy when the object to be processed is transferred, and it is also possible to suppress the deterioration of the transport mechanism and the occurrence of malfunction.

  In particular, as described in claim 6, the temperature rise of the transport mechanism can be more effectively suppressed by providing cooling means at the ceiling and bottom of the processing container. .

It is a schematic plan view which shows an example of the processing system which has the common conveying apparatus which concerns on this invention. It is a schematic sectional drawing which shows a processing system. It is a top view which shows the deformation | transformation Example of the shape of a heat reflection suppression surface. It is a fragmentary sectional view showing modification 4 of the heat reflection suppression surface. It is a figure which shows an example of the conventional processing system which consists of a cluster processing apparatus.

  Hereinafter, an embodiment of a common transfer apparatus according to the present invention and a processing system used therefor will be described in detail with reference to the accompanying drawings. FIG. 1 is a schematic plan view showing an example of a processing system having a common transport apparatus according to the present invention, and FIG. 2 is a schematic sectional view showing the processing system.

  First, an example of a processing system having a common transport apparatus according to the present invention will be described. As shown in FIGS. 1 and 2, the processing system 22 includes a plurality of, in this case, four processing apparatuses 24A, 24B, 24C, which perform a predetermined process on a semiconductor wafer W that is an object to be processed in a vacuum atmosphere. 24D, and the four processing devices 24A to 24D have a common transport device 26 according to the present invention connected to the peripheral portion. In the processing in these four processing apparatuses 24A to 24D, all processes performed in a vacuum atmosphere such as a film forming process, an etching process, and an oxidation diffusion process are applied as necessary, and at a process temperature of at least 600 ° C. or more. A processing apparatus for performing a heat treatment is included. In the processing apparatuses 24A to 24D, mounting tables 25A, 25B, 25C, and 25D for mounting the semiconductor wafer W are provided.

  The common transfer device 26 includes, for example, a hexagonal transfer container 28 that can be evacuated and returned to atmospheric pressure, and the four processing devices 24A to 24D can be opened and closed on each side of the periphery. The gate valves G are connected to each other.

  Two load lock chambers 30A and 30B for carrying the semiconductor wafer W in and out of the remaining two sides of the transfer container 28 without breaking the vacuum are respectively connected to the transfer container 28 through gate valves G. It is connected. In the load lock chambers 30A and 30B, holding tables 32A and 32B for temporarily holding the semiconductor wafer W are provided, respectively. In addition, a horizontally long load chamber 34 is commonly connected to the opposite sides of the load lock chambers 30A and 30B via gate valves G, respectively. One side of the load chamber 34 is provided with an I / O port 36 for mounting a cassette (not shown) that can accommodate a plurality of semiconductor wafers, and the semiconductor wafer is positioned at one end in the longitudinal direction thereof. An orienter 40 is provided.

  In the load chamber 34, a load-side transfer arm 42 that can be bent and stretched is provided so as to be movable along the guide rail 44 in the longitudinal direction. The inside of the load chamber 34 is at atmospheric pressure or slightly positive pressure from atmospheric pressure.

  In the transfer container 28 of the common transfer device 26, a transfer mechanism 46 that can be bent and stretched in order to transfer the semiconductor wafer W is provided. Specifically, the transfer mechanism 46 has two arms 46A and 46B that can be bent and stretched and turned, and a state in which the semiconductor wafer W is placed on the distal ends of these arms 46A and 46B. Thus, the semiconductor wafer W is transferred between the processing apparatuses 24A to 24D and between the two load lock chambers 30A and 30B.

  That is, when the semiconductor wafer W is to be picked up or placed with respect to each of the processing devices 24A to 24D and the load lock chambers 30A and 30B, the corresponding arm is bent forward and backward to move forward or backward. When the arm is directed in the direction, the arm 46A, 46B is operated to be turned (rotated) about the center fulcrum while the arm 46A, 46B is bent or retracted. In order to perform the above operation, a timing belt and a large number of bearings (not shown) are incorporated in the transport mechanism 46.

This will be described more specifically with reference to FIG. In FIG. 2, the processing device 24A is shown as a representative of the four processing devices 24A to 24D, and the load lock chamber 20A is shown as a representative of the two load lock chambers 20A and 20B. In the processing apparatus 24A, for example, a processing gas is supplied and a predetermined process, for example, a heat treatment such as a film forming process is performed in a vacuum atmosphere to introduce a predetermined processing gas, N ₂ gas, or the like. 50 is provided. The gas exhaust port 51 for exhausting the atmosphere in the processing apparatus 24A is provided with a vacuum exhaust system (not shown) so that the exhaust can be performed. The mounting table 25A is provided with heating means 52 for heating the semiconductor wafer W during heat treatment. As the heating means 52, a heating lamp or the like may be used.

  Further, in the other processing apparatuses 24B to 24D, various processes to be continuously processed are performed on the semiconductor wafer. As described above, at least one of the four processing apparatuses 24A to 24D has the semiconductor wafer W. However, for example, a heat treatment (film formation treatment, oxidative diffusion treatment, annealing treatment, etc.) that is exposed to 600 ° C. or higher is performed.

The load lock chamber 20A is provided with a gas introduction port 54 for introducing, for example, N ₂ gas as an inert gas, and a gas exhaust port 56 connected to a vacuum exhaust system (not shown). Thereby, as described above, the vacuum atmosphere and the atmospheric pressure atmosphere can be alternately realized in a short time when the semiconductor wafer W is transferred.

The transport container 28 of the common transport device 26 is also provided with a gas introduction port 58 for introducing, for example, N ₂ gas as an inert gas, and a gas exhaust port 60 connected to a vacuum exhaust system (not shown). However, unlike the load lock chambers 20A and 20B, the inside of the transport container 28 is always maintained in a vacuum atmosphere during system operation. On the ceiling surface side and the bottom surface side of the transfer container 28, at least the heat reflection suppression surfaces 62 and 64, which are the features of the present invention, along the projected plane of the trajectory along which the semiconductor wafer W held by the transfer mechanism 46 moves. Is formed.

  Specifically, the whole of the transport container 28 including the ceiling portion 28A and the bottom portion 28B is formed of aluminum or an aluminum alloy. The heat reflection suppressing surfaces 62 and 64 are formed by subjecting the surface (lower surface) of the ceiling portion 28A and the surface (upper surface) of the bottom portion 28B to anodization, respectively. The ceiling portion 28A is provided with a maintenance opening / closing lid made of aluminum or aluminum alloy (not shown).

  Here, the heat reflection suppressing surfaces 62 and 64 have substantially the same width as the diameter of the semiconductor wafer W and are formed in a donut shape or a circular ring shape as shown in FIG. It follows the trajectory. In other words, when the semiconductor wafer W held by the transfer mechanism 46 turns, the projection surface of the semiconductor wafer W in the vertical direction moves along the heat reflection suppression surfaces 62 and 64. In this case, the distance between the semiconductor wafer W and each of the heat reflection suppressing surfaces 62 and 64 is, for example, about 70 to 140 mm, although it depends on the size of the semiconductor wafer W to be processed. The widths of the heat reflection suppression surfaces 62 and 64 may be slightly smaller than the diameter of the semiconductor wafer W or may be set slightly larger.

  Here, the heat reflection suppressing surfaces 62 and 64 are subjected to black alumite treatment, and the emissivity is set to be 0.5 or more. Thereby, the radiant heat radiated from the semiconductor wafer W can be efficiently absorbed without being reflected as much as possible. Thus, by providing the heat reflection suppression surfaces 62 and 64 on the ceiling portion 28A side and the bottom portion 28B side, which are surfaces facing the surface of the semiconductor wafer W, the radiant heat of the semiconductor wafer W is efficiently suppressed by each heat reflection. By being absorbed by the surfaces 62 and 64, the heat radiation of the semiconductor wafer W can be promoted. In this case, the heat radiation of the semiconductor wafer W can be greatly promoted by setting the radiation rate of the heat reflection suppressing surfaces 62 and 64 to preferably 0.9 or more. In addition, since the surface of each arm 46A, 46B is also mirror-finished, it can suppress that the arm itself is heated by the radiation of the semiconductor wafer W also from this point.

  The ceiling portion 28A and the bottom portion 28B are provided with cooling means 66 and 68 for cooling them, respectively, and the refrigerant flows through the cooling means 66 and 68. As this refrigerant, for example, cooling water can be used.

<Operation of the present invention>
Next, the operation of the common transport apparatus and the processing system of the present invention configured as described above will be described. First, an unprocessed semiconductor wafer W is picked up by the load-side transfer arm 42 from the I / O port 36 provided in the load chamber 34 and loaded into the load chamber 34 side. The semiconductor wafer W is transferred to the orienter 40 by the load-side transfer arm 42 and is aligned here. The semiconductor wafer W after this alignment is carried into the load lock chamber that is in the atmospheric pressure atmosphere of one of the two load lock chambers 30A and 30B.

  After the load lock chamber is in a vacuum atmosphere, the gate valve G on the side of the transport container 28 in the common transport device 26 that has been previously in a vacuum atmosphere is opened to communicate with the interior of the transport container 28. Then, by operating the transfer mechanism 46, one of the two arms 46A and 46B picks up the semiconductor wafer W in the load lock chamber and takes it into the transfer container 28. Then, after closing the gate valve G, the semiconductor wafer W is loaded into, for example, the first processing apparatus 24A to perform the first processing.

  In this way, the semiconductor wafer W that has been subjected to predetermined processing, for example, heat treatment, in the first processing apparatus 24 </ b> A uses one of the two arms 46 </ b> A and 46 </ b> B of the transfer mechanism 46. Depending on the mode of processing, for example, it is sequentially transferred to the second processing device 24B, the third processing device 24C, and the fourth processing device 24D, and each processing is performed in each processing device 24B to 24D each time. Will be given. Then, the semiconductor wafer W that has been processed is unloaded to the I / O port 36 side where the processed semiconductor wafer W is placed along a path opposite to the above-described transfer path.

  Here, the operation in the common transport device 26 according to the present invention will be described with attention. When the heat treatment is performed on the semiconductor wafer W in the first to fourth processing apparatuses 24A to 24D, the semiconductor wafer temperature reaches about 700 to 1100 ° C. depending on the process temperature. When the semiconductor wafer W in the high temperature state is held and transported by the arms 46A and 46B, even if the holding time is as short as about 5 to 10 seconds, the arms 46A and 46B themselves are gradually heated, as described above. There is a risk of malfunction such as malfunction.

  However, in the case of the present invention, the heat reflection suppressing surfaces 62 and 64 are formed on the ceiling portion 28A and the bottom portion 28B of the transfer container 28 along the projection planes of the transfer locus of the semiconductor wafer W, respectively. Radiant heat radiated from W can be efficiently absorbed without being reflected as much as possible.

  In this case, since the inside of the transfer container 28 is in a vacuum atmosphere, it is almost difficult to cool the semiconductor wafer by convection. However, as described above, heat radiation by radiation is efficiently performed by the heat reflection suppression surfaces 62 and 64. Since it can absorb, the semiconductor wafer W can be cooled efficiently. In this case, since the emissivities of the heat reflection suppression surfaces 62 and 64 are set to 0.5 or more, the radiant heat can be absorbed while being reflected as little as possible.

  Thereby, heat dissipation of the semiconductor wafer W is promoted, and the semiconductor wafer W can be more efficiently cooled accordingly. In this case, the emissivity is desirably as large as possible in order to promote heat dissipation of the semiconductor wafer W, preferably 0.9 or more, and ideally, “emissivity = 1” is desirable, but technically The maximum possible emissivity is, for example, about “0.95”.

  Thus, since the semiconductor wafer W can be efficiently cooled, it is possible to prevent the transfer mechanism 46 from being excessively heated. Accordingly, it is possible to prevent the arms 46A and 46B from being excessively thermally deformed due to thermal expansion, so that not only the positional accuracy when the semiconductor wafer W is transferred can be maintained high, but also the timing belt and the bearing of the transport mechanism 46. It is possible to prevent this malfunction from occurring by preventing the deterioration of the above.

  In addition, as the operation time of the processing system becomes longer, the temperature of the ceiling portion 28A and the bottom portion 28B of the transfer container 28 may also rise to act to suppress the heat radiation of the semiconductor wafer W. However, since the ceiling portion 28A and the bottom portion 28B are respectively provided with cooling means 66 and 68 to cool the ceiling portion 28A and the bottom portion 28B, the heat radiation of the semiconductor wafer W is not suppressed, and the semiconductor wafer W Can be efficiently dissipated continuously for a long time.

  In particular, the heat dissipation efficiency of the semiconductor wafer W is effective by the fourth power of the temperature difference between the semiconductor wafer W and the heat reflection suppressing surfaces 62 and 64. Therefore, the semiconductor wafer is provided by providing the cooling means 66 and 68. The cooling effect is particularly great. For example, the ceiling and bottom of a conventional processing container are made of pure aluminum alloy and have an emissivity of about 0.1, and the amount of heat transfer (heat dissipation) from the semiconductor wafer W to the transport container during normal transport is a maximum of 0.5. However, when the heat reflection suppression surfaces 62 and 64 (radiation rate: 0.8) are provided as in the present invention, the heat transfer amount (heat radiation amount) is 3.5 ° C. at the maximum. (8022J). From this point, the effect of promoting the heat dissipation of the semiconductor wafer in the present invention could be confirmed.

  As described above, according to the present invention, in the common transfer apparatus in which a plurality of processing apparatuses 24A to 24D for processing an object to be processed, for example, the semiconductor wafer W, are connected to the peripheral part, the ceiling part 28A side and the bottom part of the transfer container 28 are provided. Since the heat reflection suppression surfaces 62 and 64 are provided at least along the region along the projection plane of the trajectory on which the object to be processed held by the transport mechanism 46 moves on the 28B side, radiation from the object to be processed is provided. Therefore, it is possible to efficiently dissipate heat to the heat reflection suppressing surface, and as a result, it is possible to efficiently suppress the temperature rise of the transport mechanism 46 that transports the object to be processed.

  Therefore, since it is possible to suppress the thermal expansion of the transport mechanism 46, it is possible to increase the positional accuracy when the workpiece is transferred, and it is also possible to suppress the deterioration of the transport mechanism 46 and the occurrence of malfunction. .

<Modified Example>
In the embodiment described above, the heat reflection suppressing surfaces 62 and 64 are formed in a circular ring shape. However, the present invention is not limited to this, and various modified embodiments are possible. FIG. 3 is a plan view showing a modified example of the shape of the heat reflection suppressing surface. In the case of the modified embodiment 1 shown in FIG. 3A, when the arms 46A and 46B are bent and extended, the processing devices 24A to 24D and the load lock chambers 20A and 20B are started from the circular ring-shaped region provided at the center. The heat reflection suppression surfaces 62A to 62F and 64A to 64F are also provided in the region corresponding to the locus of the linear movement. The heat reflection suppression surfaces 62A to 62F indicate those provided on the ceiling portion 28A, and the heat reflection suppression surfaces 64A to 64F indicate those provided on the bottom portion 2B. According to this, the projection surface of the transfer locus of the semiconductor wafer W in the transfer container 28 can be completely covered with the heat reflection suppressing surface.

  In the case of the modified embodiment 2 shown in FIG. 3B, the heat reflection suppression surfaces 62 and 64 are formed in a regular hexagonal ring shape instead of a circular ring shape. If the projection surface of the movement locus of the semiconductor wafer W can be covered, the heat reflection suppression surfaces 62 and 64 having a polygonal shape can be used without being limited to the hexagon. 3C, the heat reflection suppression surfaces 62 and 64 are provided over the entire lower surface of the ceiling portion 28A of the transport container 28 and the entire upper surface of the bottom portion 2B. . In this case, heat dissipation from the semiconductor wafer W can be further promoted. These modified embodiments 1 to 3 can also exhibit the same operational effects as the embodiments described above with reference to FIGS. 1 and 2.

<Modification Example 4>
In each of the embodiments described above, the surface of the material constituting the ceiling portion 28A or the bottom portion 28B of the transport container 28 is directly alumite-treated, but the present invention is not limited to this, and the surface of another member. The alumite treatment as described above may be performed, and this member may be attached in a planar shape as previously described with reference to FIGS. FIG. 4 is a partial cross-sectional view showing a modified example 4 of such a heat reflection suppressing surface. In FIG. 4, the ceiling portion 28 </ b> A of the transport container 28 is shown as a representative, but it is needless to say that the bottom portion 28 </ b> B is similarly formed.

  As shown in FIG. 4, here, the same heat reflection suppression surface 62 as described above is formed on the surface of the heat reflection suppression plate 70. As the heat reflection suppression plate 70, for example, a thin aluminum plate or an aluminum alloy plate is used, and the surface (lower surface) is subjected to black alumite treatment so that the emissivity is 0.5 or more. A surface 62 is formed. The heat reflection suppression plate 70 is attached to the ceiling portion 28 </ b> A with a bolt 72. In this case, a heat conductive grease 74 is interposed between the heat reflection suppressing plate 70 and the surface of the ceiling portion 28A of the transport container 28 so that the two are brought into close contact with each other so that the heat conductivity is improved. Yes. As this heat conductive grease 74, for example, HEAT SINKER (registered trademark) [Shin-Etsu Chemical Co., Ltd.] can be used. Also in this case, the same effect as each Example demonstrated previously can be exhibited. Of course, the above-described embodiments may be used in combination.

  In each of the above embodiments, the case where the four processing devices 24A to 24D are provided as the processing system has been described as an example, but the number of the processing devices is not particularly limited. Of course, the configuration of the load lock chambers 30A and 30B, the load chamber 34, and the like, which are structures on the introduction side for introducing the semiconductor wafer W into the processing system, are not limited to those described here.

  Although the semiconductor wafer is described as an example of the object to be processed here, the semiconductor wafer includes a silicon substrate and a compound semiconductor substrate such as GaAs, SiC, GaN, and the like, and is not limited to these substrates. The present invention can also be applied to glass substrates, ceramic substrates, and the like used in display devices.

DESCRIPTION OF SYMBOLS 22 Processing system 24A-24D Processing apparatus 25A-25D Mounting stand 26 Common conveying apparatus 28 Conveying container 28A Ceiling part 28B Bottom part 30A, 30B Load lock chamber 34 Load chamber 46 Conveying mechanism 46A, 46B Arm 52 Heating means 62, 64 Heat reflection suppression Surface 66, 68 Cooling means 70 Heat reflection suppressing plate 74 Thermally conductive grease

Claims (8)

In a common transport apparatus in which a plurality of processing apparatuses for processing an object to be processed are connected to a peripheral portion.
A transport container in a vacuum atmosphere;
A transport mechanism provided in the transport container and capable of bending and stretching to transport the object to be processed; and
A heat reflection suppressing surface provided along a region along a projection surface of a trajectory on which the object to be processed held at the transport mechanism moves on the ceiling side and the bottom side of the transport container;
A common transport apparatus characterized by comprising: The common conveyance device according to claim 1, wherein a radiation rate of the heat reflection suppressing surface is set to 0.5 or more. The common transfer apparatus according to claim 1, wherein the heat reflection suppressing surface is formed by subjecting the surface of the transfer container to an alumite treatment. The common transfer device according to claim 1, wherein the heat reflection suppressing surface is formed by attaching a heat reflection suppressing plate having a surface anodized to the surface of the processing container. The common conveyance device according to claim 4, wherein thermally conductive grease is interposed between the heat reflection suppressing plate and the surface of the conveyance container. The common transfer device according to any one of claims 1 to 5, wherein a cooling means is provided on each of a ceiling portion and a bottom portion of the processing container. The common transport apparatus according to claim 1, wherein the transport mechanism includes an arm that holds the object to be processed, and a surface of the arm is mirror-finished. . In a processing system for processing a workpiece,
A common conveyance device according to any one of claims 1 to 7,
A plurality of processing devices connected to the periphery of the common transfer device via a gate valve that can be opened and closed to perform processing on the object to be processed;
A processing system comprising:

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