CN114063384A - Mask pattern correction method - Google Patents
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- CN114063384A CN114063384A CN202210044740.XA CN202210044740A CN114063384A CN 114063384 A CN114063384 A CN 114063384A CN 202210044740 A CN202210044740 A CN 202210044740A CN 114063384 A CN114063384 A CN 114063384A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- Preparing Plates And Mask In Photomechanical Process (AREA)
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Abstract
The invention relates to the technical field of photoetching friendliness, in particular to a mask pattern correction method, which comprises the following steps of: providing an initial mask pattern, wherein the initial mask pattern comprises a plurality of pattern points, and each pattern point has corresponding pattern point information; matching the graph point information in the initial mask graph with dead pixel information in a preset mask graph matching library, wherein the matching library comprises mask graph dead pixel information and correction point information corresponding to the mask graph dead pixels; and if the dead pixel information is matched with certain pattern point information in the initial mask pattern, correcting the initial mask pattern by using the correction point information corresponding to the dead pixel of the mask pattern. The invention provides a mask pattern repairing method, aiming at solving the problem that the existing mask pattern correcting method needs to consume huge computing resources.
Description
Technical Field
The invention relates to the technical field of pattern repair, in particular to a mask pattern correction method.
Background
The simulation model simulates the optical process in the photoetching machine, so that a designer can observe the imaging result of the design without actual production, and the design graph is corrected according to the imaging result to improve the yield and the stability during production.
However, correcting the mask pattern using the existing mask pattern correction method requires a huge amount of calculation resources and time.
Disclosure of Invention
The invention provides a mask pattern repairing method, aiming at solving the problem that the existing mask pattern correcting method needs to consume huge computing resources.
In order to solve the technical problems, the invention provides the following technical scheme: a mask pattern correction method comprising the steps of: providing an initial mask pattern, wherein the initial mask pattern comprises a plurality of pattern points, and each pattern point has corresponding pattern point information; matching the graph point information in the initial mask graph with dead pixel information in a preset mask graph matching library, wherein the matching library comprises mask graph dead pixel information and correction point information corresponding to the mask graph dead pixels; and if the dead pixel information is matched with certain pattern point information in the initial mask pattern, correcting the initial mask pattern by using the correction point information corresponding to the dead pixel of the mask pattern.
Preferably, the providing an initial mask pattern further comprises: establishing a dead pixel library with the mask pattern dead pixels; correcting each mask pattern bad point in the bad point library to obtain a corrected point corresponding to the mask pattern bad point, and storing the corrected point corresponding to the mask pattern bad point in a correction library; and combining the bad pixel library and the correction library into the matching library.
Preferably, the manner of correcting each mask pattern dead pixel in the dead pixel library is as follows: inputting each mask pattern dead pixel into a simulation correction model; and the simulation correction model simulates and corrects the mask pattern dead pixel to obtain the correction point corresponding to the mask pattern dead pixel.
Preferably, the matching of the pattern dot information in the initial mask pattern and the dead pixel information in a preset dead pixel library includes: and carrying out pattern matching on pattern points in the initial mask pattern and at least part of mask pattern dead pixels in the dead pixel library.
Preferably, the pattern matching includes: and matching the graph point information in the initial mask graph with the dead pixel information in a preset dead pixel library according to a preset matching rule.
Preferably, the preset matching rule includes fuzzy matching and precise matching.
Preferably, part or all of the dead pixel information in the dead pixel library is selected to form the preset dead pixel library.
Preferably, if the matching is successful, the correction point information corresponding to the mask pattern bad point is used to replace the pattern point information in the initial mask pattern for correction.
Preferably, the method further comprises outputting the corrected mask pattern after the correction.
Another technical solution for solving the above technical problems of the present invention is: a computer readable storage medium having computer program instructions thereon which, when executed by a processor, implement a mask pattern correction method as described above.
Another technical solution for solving the above technical problems of the present invention is: a graph repairing device comprises a device body and a device running program, wherein the device body realizes the mask graph repairing method when executing the device running program.
Compared with the prior art, the mask pattern repairing method provided by the invention has the following beneficial effects:
1. the invention provides a mask pattern correction method, which comprises the following steps: providing an initial mask pattern, wherein the initial mask pattern comprises a plurality of pattern points, and each pattern point has corresponding pattern point information; matching the graph point information in the initial mask graph with dead pixel information in a preset mask graph matching library, wherein the matching library comprises mask graph dead pixel information and correction point information corresponding to the mask graph dead pixels; and if the dead pixel information is matched with the information of a certain pattern point in the initial mask pattern, correcting the initial mask pattern by using the correction point information corresponding to the dead pixel of the mask pattern. And matching the initial mask pattern with the bad points in the matching library, and performing better bad point detection on the initial mask pattern through the bad points in the matching library. And the part of the initial mask pattern successfully matched with the dead pixel of the matching library is directly replaced by the correction point corresponding to the dead pixel, so that the time required by repair is reduced. Aiming at the overall design graph, the simulation of key areas is carried out, the graph is matched with the dead pixel of the matching library, and then the correction point corresponding to the dead pixel is used for replacing and correcting the graph with correction, so that the time can be greatly saved, and meanwhile, only a small amount of operation is needed, and the resources are saved. The problem of correcting the design graph by using a small amount of resources is solved.
2. The invention provides a mask pattern repairing method, which provides an initial mask pattern and comprises the following steps: establishing a dead pixel library with mask pattern dead pixels; correcting each mask pattern dead pixel in the dead pixel library to obtain a corrected point corresponding to the mask pattern dead pixel, and storing the corrected point corresponding to the mask pattern dead pixel in the correction library; and combining the dead pixel library and the correction library into a matching library. And establishing a dead pixel library according to the required dead pixel or past experience, wherein the dead pixel library mainly comprises the dead pixel aiming at the initial mask pattern, and the required dead pixel is adopted, so that redundant matching is not performed in the subsequent matching process, the time is reduced, and the resources are saved. The dead pixels are corrected by adopting simulation software to obtain correction points which correspond to the dead pixels one by one to establish a correction library, so that the dead pixels of the corrected mask graph can be directly replaced and corrected subsequently without performing simulation correction again, the time is saved, the operation is reduced, and the resources are saved. The established bad point library and the matching library formed by the correction library can ensure that the corresponding correction points of the bad points matched subsequently can be found in the matching library to be directly replaced and corrected, and the problem of correction errors can not occur, so that the time is saved, the operation is reduced, and the resources are saved.
3. The invention provides a mask pattern repairing method, which corrects each mask pattern dead pixel in a dead pixel library in the following mode: inputting each mask pattern dead pixel into a simulation correction model; and the simulation correction model simulates and corrects the mask pattern dead pixel to obtain a correction point corresponding to the mask pattern dead pixel. And inputting each mask pattern dead pixel into a simulation repairing model to perform simulation and correction of the mask pattern dead pixel to obtain a corrected point. The method can only carry out simulation restoration on the mask pattern dead pixel, can be convenient for directly carrying out dead pixel replacement in the later period, does not need to carry out redundant simulation operation, and saves resources.
4. The invention provides a mask pattern repairing method, which matches pattern point information in an initial mask pattern with dead pixel information in a preset dead pixel library and comprises the following steps: and carrying out pattern matching on the initial mask pattern points and at least partial mask pattern dead pixels in the dead pixel library. The method selects the dead pixel in the required dead pixel library for matching, can specifically select the dead pixel in the required dead pixel library to match with the initial mask pattern under the condition of confirming the dead pixel type of the initial mask pattern to be solved, can reduce the computation required by matching, reduce the time and save the resources.
5. The invention provides a mask pattern repairing method, and pattern matching comprises the following steps: and matching the graph point information in the initial mask graph with the dead pixel information in the preset dead pixel library according to a preset matching rule. The matching rules are set for pattern matching, different matching rules can be set according to the required conditions, and therefore the optimal matching effect is achieved, and meanwhile unnecessary operation can be reduced.
6. According to the mask pattern repairing method provided by the invention, the preset matching rule comprises fuzzy matching and accurate matching. Different matching rules are selected according to different conditions, so that the required effect can be better achieved, and meanwhile, resources are not wasted. When the dead pixel of the initial mask pattern needs to be accurately found out, accurate matching can be adopted, and accurate pattern matching is carried out so as to avoid errors. When a large amount of dead pixel detection is needed, fuzzy matching can be adopted for matching, and the time needed by matching is further reduced.
7. The invention provides a mask pattern repairing method, which selects part or all of dead pixel information in a dead pixel library to form a preset dead pixel library. The bad pixel selection can be carried out on the bad pixel library according to the condition of the initial mask pattern or the type of the bad pixels of the mask pattern required to be repaired, so that the bad pixels in the required bad pixel library are selected to be matched with the mask pattern to be repaired. Unnecessary operation can be better reduced, time is saved, and resources are saved.
8. According to the mask pattern repairing method provided by the invention, if the matching is successful, the information of the correction points corresponding to the bad points of the mask pattern is used for replacing the information of the initial mask pattern to correct. After the initial mask graph and the bad points in the bad point library are successfully matched, the corresponding positions of the bad points in the matched bad point library in the correction library are used for replacing the corresponding positions on the initial mask graph, so that the initial mask graph can directly correct the bad points without independently performing simulation correction, the time for restoring the bad points on the initial mask graph is shortened, the process of re-simulation is reduced, and resources are saved.
9. The invention provides a mask pattern repairing method, which further comprises the following steps after correction: and outputting the corrected mask pattern.
And outputting the corrected mask pattern after the initial pattern dead pixel replacement correction is finished, and directly outputting the corrected mask pattern without carrying out simulation operation on the initial mask pattern to obtain the corrected mask pattern. The time for repairing the mask pattern is saved, and the use of resources is reduced.
10. The present invention provides a computer readable storage medium having computer program instructions thereon, which when executed by a processor implement the above-described method. The computer-readable storage medium has the same advantages as the mask pattern correction method, and is not described herein again.
11. The graph repairing device provided by the invention comprises a device body and a device running program, wherein the device body realizes the mask graph repairing method when executing the device running program. The pattern correction apparatus has the same beneficial effects as the mask pattern correction method, and details are not repeated herein.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a flowchart of a mask pattern repair method according to a first embodiment of the present invention.
Fig. 2 is a flowchart of step S0 of a mask pattern repairing method according to a first embodiment of the present invention.
Fig. 3 is a flowchart of step S0b of a mask pattern repairing method according to a first embodiment of the present invention.
Fig. 4 is a flowchart of step S1 of a mask pattern repairing method according to a first embodiment of the present invention.
Fig. 5 is a flowchart illustrating a step S12 of a mask pattern repairing method according to a first embodiment of the present invention.
Fig. 6 is a flowchart of step S3 of a mask pattern repairing method according to a first embodiment of the present invention.
Fig. 7 is a flowchart of step S4 of a mask pattern repairing method according to a first embodiment of the present invention.
FIG. 8 is a flowchart of a second embodiment of the present invention for providing global graph repair.
Fig. 9 is a diagram of a circuit design of a block 20um by 20um according to a second embodiment of the present invention.
Fig. 10 is a graph of a bad dot pattern of 1um x 1um provided in the second embodiment of the present invention.
Fig. 11 is a modified graph of a block 1um x 1um according to a second embodiment of the present invention.
Fig. 12 is a global graph provided by the second embodiment of the present invention.
Fig. 13 is a partial cut of a dotted pattern of the global pattern provided by the second embodiment of the present invention.
Fig. 14 is a modified global graph provided in the second embodiment of the present invention.
Fig. 15 is a partial cut of a corrected dot pattern in the corrected global pattern according to the second embodiment of the present invention.
Fig. 16 is a schematic diagram of a computer-readable storage medium according to a third embodiment of the present invention.
Fig. 17 is a schematic diagram of a graphic repair apparatus according to a fourth embodiment of the present invention.
The attached drawings indicate the following:
100. a computer-readable storage medium; 200. a graphic repair device;
110. computer program instructions; 210. an apparatus body; 220. the device runs the program.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. Referring to fig. 1, a mask pattern correction method according to a first embodiment of the present invention includes the following steps:
s1, providing an initial mask pattern, wherein the initial mask pattern comprises a plurality of pattern points, and each pattern point has corresponding pattern point information;
s2: matching the graph point information in the initial mask graph with dead pixel information in a preset mask graph matching library, wherein the matching library comprises mask graph dead pixel information and correction point information corresponding to the mask graph dead pixels;
s3: and if the dead pixel information is matched with the information of a certain pattern point in the initial mask pattern, correcting the initial mask pattern by using the correction point information corresponding to the dead pixel of the mask pattern.
It can be understood that, in the first embodiment of the present invention, the initial mask pattern is matched with the bad pixels in the matching library, and the bad pixels in the initial mask pattern can be better detected by matching the bad pixels in the library.
Furthermore, in the first embodiment of the present invention, the part of the initial mask pattern that is successfully matched with the dead pixel in the matching library is directly replaced with the corrected point corresponding to the dead pixel, so that the time required for repair is reduced.
Furthermore, in the first embodiment of the present invention, the simulation of the key area and the matching of the dead pixel of the matching library to the graphic are performed for the global design graphic, and then the replacement and correction of the graphic with correction are performed by using the correction point corresponding to the dead pixel, so that the time can be greatly saved, and at the same time, only a small amount of calculation is required, thereby saving the resources. The problem of correcting the design graph by using a small amount of resources is solved.
Referring to fig. 2, a mask pattern correction method according to a first embodiment of the present invention further includes step S0 before step S1:
s0 a: establishing a dead pixel library with mask pattern dead pixels;
s0 b: correcting each mask pattern dead pixel in the dead pixel library to obtain a corrected point corresponding to the mask pattern dead pixel, and storing the corrected point corresponding to the mask pattern dead pixel in the correction library;
s0 c: and combining the dead pixel library and the correction library into a matching library.
It is to be understood that, in the first embodiment of the present invention, the bad point library and the correction library together constitute a bad point matching library. Specifically, in the first embodiment of the present invention, a dead pixel library may be established according to a required dead pixel or past experience, and the dead pixel library mainly includes a dead pixel for an initial mask pattern, and the required dead pixel is adopted, so that redundant matching is not performed in a subsequent matching process, thereby reducing time and saving resources.
Specifically, in the first embodiment of the present invention, the dead pixels are corrected by using the simulation software to obtain the correction points corresponding to the dead pixels one by one, so that the dead pixels of the corrected mask pattern can be directly replaced and corrected subsequently without performing simulation correction again, thereby saving time, reducing operation and saving resources.
Furthermore, in the first embodiment of the present invention, the matching library formed by the established dead pixel library and the correction library can ensure that the corresponding correction point of the subsequently matched dead pixel can be found in the matching library to directly replace and correct the dead pixel, and the problem of correction error does not occur, so that time is saved, operation is reduced, and resources are saved.
Referring to fig. 3, a first embodiment of the present invention provides a mask pattern correction method, in step S0b, a method for correcting each mask pattern dead pixel in the dead pixel library includes:
s0b 1: inputting each mask pattern dead pixel into a simulation correction model;
s0b 2: and the simulation correction model simulates and corrects the mask pattern dead pixel to obtain a correction point corresponding to the mask pattern dead pixel.
It can be understood that, in the first embodiment of the present invention, each mask pattern dead pixel is input into the simulation repair model to perform simulation and correction of the mask pattern dead pixel, so as to obtain a corrected point. Therefore, the mask pattern dead pixel is simulated and repaired, the dead pixel replacement can be conveniently and directly carried out at the later stage, redundant simulation operation is not needed, and resources are saved.
Referring to fig. 4, a mask pattern correction method according to a first embodiment of the present invention is provided, wherein step S1 includes:
s11: inputting an initial mask pattern;
s12: and carrying out pattern matching on the pattern points in the initial mask pattern and at least partial mask pattern dead pixels in the dead pixel library.
It can be understood that, in the first embodiment of the present invention, the bad pixels in the required bad pixel library are selected for matching, and the bad pixels in the required bad pixel library can be specifically selected to match with the initial mask pattern under the condition that the bad pixel type of the initial mask pattern to be solved is confirmed, so that the computation amount required for matching can be reduced, the time is reduced, and the resources are saved.
Referring to fig. 4, a mask pattern correction method is provided in the first embodiment of the present invention, and the pattern matching method in step S12 includes: and matching the graph point information in the initial mask graph with the dead pixel information in the preset dead pixel library according to a preset matching rule.
It can be understood that, in the first embodiment of the present invention, the matching rule is set for pattern matching, and different matching rules can be set according to the required situation, so that the optimal matching effect is achieved and unnecessary operations can be reduced.
Further, in the first embodiment of the present invention, the pattern point in the initial mask pattern is matched with the dead pixel in the preset dead pixel library in a manner of matching according to the hash value of the pattern.
Specifically, the hash value calculation is performed on the dead pixel in the dead pixel library, the hash value calculation is performed on the graph point in the initial mask graph, and the hash values of the same graph are equal, that is, if the graph point in the initial mask graph has the same hash value as the dead pixel, the graph point is matched with the dead pixel.
Referring to fig. 5, the first embodiment of the present invention provides a mask pattern correction method, further comprising the following steps in step S12:
s12 a: and setting a matching rule, wherein the matching rule comprises fuzzy matching and precise matching.
It can be understood that, in the first embodiment of the present invention, the matching rule is set for pattern matching, and different matching rules can be set according to the required situation, so that the optimal matching effect is achieved and unnecessary operations can be reduced.
Specifically, in the first embodiment of the present invention, when the bad point of the initial mask pattern needs to be accurately found, the accurate matching may be adopted to perform the accurate pattern matching so as to avoid the error. When a large amount of dead pixel detection is needed, fuzzy matching can be adopted for matching, and the time needed by matching is further reduced.
Referring to fig. 5, the first embodiment of the invention provides a mask pattern correction method, which further includes the following steps after step S12 a:
s12 b: and selecting part or all of the dead pixel information in the dead pixel library to form a preset dead pixel library.
It can be understood that, in the first embodiment of the present invention, the bad pixel selection may be performed on the bad pixel library according to the condition of the initial mask pattern or according to the type of the bad pixel of the mask pattern that needs to be repaired, so as to select the bad pixel in the needed bad pixel library to be matched with the mask pattern to be repaired. Unnecessary operation can be better reduced, time is saved, and resources are saved.
Specifically, step S12a and step S12b are both performed between step S11 and step S12, and the order of step S12a and step S12b is not required in the embodiment of the present invention.
Referring to fig. 6, a mask pattern correction method according to a first embodiment of the present invention is provided, wherein step S3 includes:
s31: matching is successful;
s32: and correcting by using correction point information corresponding to the bad points of the mask pattern instead of the initial mask pattern information.
It is understood that, in the first embodiment of the present invention, if the matching is successful, the correction point information corresponding to the bad point of the mask pattern is used to replace the pattern point information in the initial mask pattern for correction.
Specifically, after the initial mask pattern and the dead pixel in the dead pixel library are successfully matched, the corresponding position of the dead pixel in the initial mask pattern is replaced by using the corresponding correction point of the dead pixel in the matched dead pixel library in the correction library, so that the dead pixel can be directly corrected by the initial mask pattern without independently performing simulation correction, the time for repairing the dead pixel in the initial mask pattern is reduced, the process of re-simulation is reduced, and resources are saved.
Referring to fig. 7, a mask pattern correction method according to a first embodiment of the present invention includes the following steps after step S3:
s4: and outputting the corrected mask pattern.
It can be understood that, in the first embodiment of the present invention, the corrected mask pattern is output after the initial pattern dead pixel replacement correction is completed, and the corrected mask pattern can be obtained without performing simulation operation on the initial mask pattern, that is, the corrected mask pattern can be directly output. The time for repairing the mask pattern is saved, and the use of resources is reduced.
To sum up, a first embodiment of the present invention provides a mask pattern correction method, which includes first establishing a dead pixel library and a correction library and a dead pixel matching library corresponding to dead pixels and correction points one to one, then inputting an initial mask pattern, setting a matching rule and selecting a dead pixel to be matched, then replacing a dead pixel on the initial mask pattern with a dead pixel on the initial mask pattern successfully matched with the dead pixel by using a correction point corresponding to the dead pixel, and finally outputting the corrected initial mask pattern.
Referring to fig. 8 to 15, a mask pattern correction method according to a second embodiment of the present invention is provided.
It is to be understood that the second embodiment of the present invention employs a 20um x 20um circuit design pattern as a global design pattern and a defective dot library including a 1um x 1um defective dot pattern, and a correction library including a 1um x 1um correction pattern, matches the defective dot pattern in the defective dot library in the global design pattern, and replaces it with the correction pattern in the correction library.
Specifically, in the second embodiment of the present invention, the specific process is as follows:
s201: inputting a global design graph;
s202: carrying out pattern matching;
s203: carrying out graph replacement and correction;
s204: outputting the corrected global graph;
it can be understood that the second embodiment of the present invention adopts the method for correcting a mask pattern described in the first embodiment, which has the same advantages as the first embodiment, and therefore, the description thereof is omitted here.
Referring to fig. 12 and 13, in the second embodiment of the present invention, a matching rule is set for matching, that is, hash value calculation is performed on the global design pattern and the dead dot pattern, and the matching of the hash values of the global design pattern and the dead dot pattern is successful.
It is to be understood that fig. 12 is a global graph, and fig. 13 is a partial cut of a graph having a broken dot in the global graph.
Referring to fig. 14 and fig. 15, in the second embodiment of the present invention, for the bad point after successful matching, the bad point in the global graph is modified and replaced by the modification point in the modification base corresponding to the bad point in the bad point base, so as to obtain the modified global graph.
It is to be understood that fig. 14 is a modified global graph, and fig. 15 is a partial cut of the modified global graph with a modified dot pattern.
Referring to fig. 16, a computer-readable storage medium 100 having computer program instructions 110 thereon is provided according to a third embodiment of the present invention, wherein the computer program instructions 110 are executed by a processor to implement the mask pattern correction method.
It is to be understood that the computer-readable storage medium 100 in the third embodiment of the present invention stores therein computer program instructions 110, and the computer program instructions 110 can be called by the processor to execute a mask pattern correction method described in the first embodiment. The computer-readable storage medium 100 has the same advantages as the mask pattern correction method described above, and thus, the description thereof is omitted here.
In particular, the computer-readable storage medium 100 may be an electronic memory such as a flash memory, an EEPROM (electrically erasable programmable read only memory), an EPROM, a hard disk, or a ROM.
Optionally, the computer-readable storage medium 100 includes a non-volatile computer-readable medium.
In particular, the computer-readable storage medium 100 has storage space for computer program instructions 110 for performing any of the method steps of the above-described method. The program instructions may be read from or written to one or more computer program products. Alternatively, the computer program instructions 110 may be compressed in a suitable form.
Referring to fig. 17, a fourth embodiment of the present invention provides a pattern repairing apparatus 200, which includes an apparatus main body 210 and an apparatus running program 220, wherein the apparatus main body 210 implements the mask pattern correcting method when executing the apparatus running program 220.
It is understood that, when the graphic repair apparatus 200 in the fourth embodiment of the present invention is running, the apparatus body 210 executes the apparatus running program 220 to implement the method described in the first embodiment. The same advantageous effects of the pattern correction apparatus 200 as those of the mask pattern correction method described above are not described herein.
In the embodiments provided herein, it should be understood that "B corresponding to a" means that B is associated with a from which B can be determined. It should also be understood, however, that determining B from a does not mean determining B from a alone, but may also be determined from a and/or other information.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. Those skilled in the art should also appreciate that the embodiments described in this specification are exemplary and alternative embodiments, and that the acts and modules illustrated are not required in order to practice the invention.
In various embodiments of the present invention, it should be understood that the sequence numbers of the above-mentioned processes do not imply an inevitable order of execution, and the execution order of the processes should be determined by their functions and inherent logic, and should not constitute any limitation on the implementation process of the embodiments of the present invention.
The flowchart and block diagrams in the figures of the present application illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will be understood that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
Compared with the prior art, the mask pattern correction method provided by the invention has the following beneficial effects:
1. the invention provides a mask pattern correction method, which comprises the following steps: providing an initial mask pattern, wherein the initial mask pattern comprises a plurality of pattern points, and each pattern point has corresponding pattern point information; matching the graph point information in the initial mask graph with dead pixel information in a preset mask graph matching library, wherein the matching library comprises mask graph dead pixel information and correction point information corresponding to the mask graph dead pixels; and if the dead pixel information is matched with the information of a certain pattern point in the initial mask pattern, correcting the initial mask pattern by using the correction point information corresponding to the dead pixel of the mask pattern. And matching the initial mask pattern with the bad points in the matching library, and performing better bad point detection on the initial mask pattern through the bad points in the matching library. And the part of the initial mask pattern successfully matched with the dead pixel of the matching library is directly replaced by the correction point corresponding to the dead pixel, so that the time required by repair is reduced. Aiming at the overall design graph, the simulation of key areas is carried out, the graph is matched with the dead pixel of the matching library, and then the correction point corresponding to the dead pixel is used for replacing and correcting the graph with correction, so that the time can be greatly saved, and meanwhile, only a small amount of operation is needed, and the resources are saved. The problem of correcting the design graph by using a small amount of resources is solved.
2. The invention provides a mask pattern repairing method, which provides an initial mask pattern and comprises the following steps: establishing a dead pixel library with mask pattern dead pixels; correcting each mask pattern dead pixel in the dead pixel library to obtain a corrected point corresponding to the mask pattern dead pixel, and storing the corrected point corresponding to the mask pattern dead pixel in the correction library; and combining the dead pixel library and the correction library into a matching library. And establishing a dead pixel library according to the required dead pixel or past experience, wherein the dead pixel library mainly comprises the dead pixel aiming at the initial mask pattern, and the required dead pixel is adopted, so that redundant matching is not performed in the subsequent matching process, the time is reduced, and the resources are saved. The dead pixels are corrected by adopting simulation software to obtain correction points which correspond to the dead pixels one by one to establish a correction library, so that the dead pixels of the corrected mask graph can be directly replaced and corrected subsequently without performing simulation correction again, the time is saved, the operation is reduced, and the resources are saved. The established bad point library and the matching library formed by the correction library can ensure that the corresponding correction points of the bad points matched subsequently can be found in the matching library to be directly replaced and corrected, and the problem of correction errors can not occur, so that the time is saved, the operation is reduced, and the resources are saved.
3. The invention provides a mask pattern repairing method, which corrects each mask pattern dead pixel in a dead pixel library in the following mode: inputting each mask pattern dead pixel into a simulation correction model; and the simulation correction model simulates and corrects the mask pattern dead pixel to obtain a correction point corresponding to the mask pattern dead pixel. And inputting each mask pattern dead pixel into a simulation repairing model to perform simulation and correction of the mask pattern dead pixel to obtain a corrected point. The method can only carry out simulation restoration on the mask pattern dead pixel, can be convenient for directly carrying out dead pixel replacement in the later period, does not need to carry out redundant simulation operation, and saves resources.
4. The invention provides a mask pattern repairing method, which matches pattern point information in an initial mask pattern with dead pixel information in a preset dead pixel library and comprises the following steps: and carrying out pattern matching on the initial mask pattern points and at least partial mask pattern dead pixels in the dead pixel library. The method selects the dead pixel in the required dead pixel library for matching, can specifically select the dead pixel in the required dead pixel library to match with the initial mask pattern under the condition of confirming the dead pixel type of the initial mask pattern to be solved, can reduce the computation required by matching, reduce the time and save the resources.
5. The invention provides a mask pattern repairing method, and pattern matching comprises the following steps: and matching the graph point information in the initial mask graph with the dead pixel information in the preset dead pixel library according to a preset matching rule. The matching rules are set for pattern matching, different matching rules can be set according to the required conditions, and therefore the optimal matching effect is achieved, and meanwhile unnecessary operation can be reduced.
6. According to the mask pattern repairing method provided by the invention, the preset matching rule comprises fuzzy matching and accurate matching. Different matching rules are selected according to different conditions, so that the required effect can be better achieved, and meanwhile, resources are not wasted. When the dead pixel of the initial mask pattern needs to be accurately found out, accurate matching can be adopted, and accurate pattern matching is carried out so as to avoid errors. When a large amount of dead pixel detection is needed, fuzzy matching can be adopted for matching, and the time needed by matching is further reduced.
7. The invention provides a mask pattern repairing method, which selects part or all of dead pixel information in a dead pixel library to form a preset dead pixel library. The bad pixel selection can be carried out on the bad pixel library according to the condition of the initial mask pattern or the type of the bad pixels of the mask pattern required to be repaired, so that the bad pixels in the required bad pixel library are selected to be matched with the mask pattern to be repaired. Unnecessary operation can be better reduced, time is saved, and resources are saved.
8. According to the mask pattern repairing method provided by the invention, if the matching is successful, the information of the correction points corresponding to the bad points of the mask pattern is used for replacing the information of the initial mask pattern to correct. After the initial mask graph and the bad points in the bad point library are successfully matched, the corresponding positions of the bad points in the matched bad point library in the correction library are used for replacing the corresponding positions on the initial mask graph, so that the initial mask graph can directly correct the bad points without independently performing simulation correction, the time for restoring the bad points on the initial mask graph is shortened, the process of re-simulation is reduced, and resources are saved.
9. The invention provides a mask pattern repairing method, which further comprises the following steps after correction: and outputting the corrected mask pattern.
And outputting the corrected mask pattern after the initial pattern dead pixel replacement correction is finished, and directly outputting the corrected mask pattern without carrying out simulation operation on the initial mask pattern to obtain the corrected mask pattern. The time for repairing the mask pattern is saved, and the use of resources is reduced.
10. The present invention provides a computer readable storage medium having computer program instructions thereon, which when executed by a processor implement the above-described method. The computer-readable storage medium has the same advantages as the mask pattern correction method, and is not described herein again.
11. The graph repairing device provided by the invention comprises a device body and a device running program, wherein the device body realizes the mask graph repairing method when executing the device running program. The pattern correction apparatus has the same beneficial effects as the mask pattern correction method, and details are not repeated herein.
The mask pattern correction method disclosed by the embodiment of the invention is described in detail above, and the principle and the embodiment of the invention are explained in the text by applying specific examples, and the description of the above embodiment is only used for helping to understand the method and the core idea of the invention; meanwhile, for the persons skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present description should not be construed as a limitation to the present invention, and any modification, equivalent replacement, and improvement made within the principle of the present invention should be included in the protection scope of the present invention.
Claims (11)
1. A mask pattern correction method characterized by: the method comprises the following steps:
providing an initial mask pattern, wherein the initial mask pattern comprises a plurality of pattern points, and each pattern point has corresponding pattern point information;
matching the graph point information in the initial mask graph with dead pixel information in a preset mask graph matching library, wherein the matching library comprises mask graph dead pixel information and correction point information corresponding to the mask graph dead pixels;
and if the dead pixel information is matched with certain pattern point information in the initial mask pattern, correcting the initial mask pattern by using the correction point information corresponding to the dead pixel of the mask pattern.
2. The mask pattern correction method according to claim 1, wherein: the providing of the initial mask pattern further comprises:
establishing a dead pixel library with the mask pattern dead pixels;
correcting each mask pattern bad point in the bad point library to obtain a corrected point corresponding to the mask pattern bad point, and storing the corrected point corresponding to the mask pattern bad point in a correction library;
and combining the bad pixel library and the correction library into the matching library.
3. The mask pattern correction method according to claim 2, wherein: the mode for correcting each mask pattern dead pixel in the dead pixel library is as follows:
inputting each mask pattern dead pixel into a simulation correction model;
and the simulation correction model simulates and corrects the mask pattern dead pixel to obtain the correction point corresponding to the mask pattern dead pixel.
4. The mask pattern correction method according to claim 3, wherein: the step of matching the graph point information in the initial mask graph with the dead pixel information in a preset dead pixel library comprises the following steps: and carrying out pattern matching on pattern points in the initial mask pattern and at least part of mask pattern dead pixels in the dead pixel library.
5. The mask pattern correction method according to claim 4, wherein: the pattern matching includes: and matching the graph point information in the initial mask graph with the dead pixel information in a preset dead pixel library according to a preset matching rule.
6. The mask pattern correction method according to claim 5, wherein: the preset matching rules comprise fuzzy matching and precise matching.
7. The mask pattern correction method of claim 6, wherein: and selecting part or all of the dead pixel information in the dead pixel library to form the preset dead pixel library.
8. The mask pattern correction method according to claim 7, wherein: and if the matching is successful, replacing the graph point information in the initial mask graph with the corrected point information corresponding to the mask graph bad point to correct.
9. The mask pattern correction method according to claim 1, wherein: the method further comprises, after the correcting: and outputting the corrected mask pattern.
10. A computer-readable storage medium having computer program instructions stored thereon, characterized in that: the computer program instructions, when executed by a processor, implement the method of any one of claims 1-9.
11. A graphic repair device characterized by: the method comprises an equipment body and an equipment running program, wherein the equipment body executes the equipment running program to realize the method according to any one of claims 1-9.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210044740.XA CN114063384A (en) | 2022-01-14 | 2022-01-14 | Mask pattern correction method |
| CN202211289154.8A CN115906751A (en) | 2022-01-14 | 2022-10-20 | Mask layout correction method |
| PCT/CN2022/133978 WO2023134309A1 (en) | 2022-01-14 | 2022-11-24 | Mask layout correction method |
| TW111146179A TWI818820B (en) | 2022-01-14 | 2022-12-01 | A method of mask map correction |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210044740.XA CN114063384A (en) | 2022-01-14 | 2022-01-14 | Mask pattern correction method |
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| CN202210044740.XA Withdrawn CN114063384A (en) | 2022-01-14 | 2022-01-14 | Mask pattern correction method |
| CN202211289154.8A Pending CN115906751A (en) | 2022-01-14 | 2022-10-20 | Mask layout correction method |
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| CN202211289154.8A Pending CN115906751A (en) | 2022-01-14 | 2022-10-20 | Mask layout correction method |
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| Country | Link |
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| CN (2) | CN114063384A (en) |
| TW (1) | TWI818820B (en) |
| WO (1) | WO2023134309A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115879410A (en) * | 2022-12-16 | 2023-03-31 | 华芯巨数(杭州)微电子有限公司 | Mask layout violation automatic repairing method, database training method, system and computer equipment |
| WO2023134309A1 (en) * | 2022-01-14 | 2023-07-20 | 深圳晶源信息技术有限公司 | Mask layout correction method |
| CN117270309A (en) * | 2023-09-08 | 2023-12-22 | 东方晶源微电子科技(北京)股份有限公司 | Simulated dead pixel repairing method, system and storage medium |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116736626B (en) * | 2023-08-10 | 2023-11-14 | 华芯程(杭州)科技有限公司 | Optical proximity correction method, device, equipment and computer readable storage medium |
| CN118135261B (en) * | 2024-05-06 | 2024-08-06 | 浙江大学 | Graph matching method and system for ultra-large scale layout |
| CN118363252B (en) * | 2024-06-18 | 2024-09-24 | 全芯智造技术有限公司 | Method, apparatus and medium for layout processing |
| CN118363253A (en) * | 2024-06-18 | 2024-07-19 | 全芯智造技术有限公司 | Method, apparatus and medium for layout processing |
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- 2022-10-20 CN CN202211289154.8A patent/CN115906751A/en active Pending
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Also Published As
| Publication number | Publication date |
|---|---|
| CN115906751A (en) | 2023-04-04 |
| TW202329038A (en) | 2023-07-16 |
| TWI818820B (en) | 2023-10-11 |
| WO2023134309A1 (en) | 2023-07-20 |
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