CN117389114A - Mask design layout blurring detection method, storage medium and pattern repairing equipment - Google Patents

Mask design layout blurring detection method, storage medium and pattern repairing equipment Download PDF

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Publication number
CN117389114A
CN117389114A CN202311140408.4A CN202311140408A CN117389114A CN 117389114 A CN117389114 A CN 117389114A CN 202311140408 A CN202311140408 A CN 202311140408A CN 117389114 A CN117389114 A CN 117389114A
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design layout
mask design
bad point
matching
information
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何平
阮文胜
张鸿儒
丁明
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Dongfang Jingyuan Electron Ltd
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Dongfang Jingyuan Electron Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441Optical proximity correction [OPC]
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70533Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F18/00Pattern recognition
    • G06F18/20Analysing
    • G06F18/22Matching criteria, e.g. proximity measures
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F18/00Pattern recognition
    • G06F18/20Analysing
    • G06F18/24Classification techniques
    • G06F18/241Classification techniques relating to the classification model, e.g. parametric or non-parametric approaches

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  • Computer Vision & Pattern Recognition (AREA)
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  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

The present invention relates to the field of mask layout detection technology, and in particular, to a mask design layout blur detection method, a storage medium, and a pattern repair apparatus. The method comprises the following steps: providing an initial mask design layout, and obtaining graphic point information of the initial mask design layout; providing a preset bad point database, breaking the bad point pattern into a plurality of patterns formed by rectangles through design rule inspection in the bad point database so as to carry out fuzzy classification on the bad point information and obtain the bad point information after the fuzzy classification; matching the graphic point information in the initial mask design layout with the bad point information in a preset bad point database, and judging that the bad point exists in the initial mask design layout if the matching is successful. The invention solves the technical problems that the pattern in the mask is usually missing or slightly modified in a large amount, and the probability of matching the pattern by an accurate pattern matching method is greatly reduced.

Description

Mask design layout blurring detection method, storage medium and pattern repairing equipment
[ field of technology ]
The present invention relates to the field of mask layout detection technology, and in particular, to a mask design layout blur detection method, a storage medium, and a pattern repair apparatus.
[ background Art ]
In the manufacturing process of a semiconductor integrated circuit, modeling is required to be carried out on the design layout of a chip photoetching mask for many times, and bad points generated by modeling are modified so as to repair potential defects in mask design.
The simulation of the mask design of the chip is complex and time-consuming, and the modification of the mask is a repeated and tedious process, and because the pattern of the mask design is usually repeated and the part generating the dead pixel is repeated, the time and flow for detecting the mask defect can be greatly shortened by applying the pattern matching technology.
The mask layout has repeatability and a large number of tiny differences or pattern defects, so that bad points cannot be classified and the positions of the bad points cannot be detected due to different hash check values, the probability of matching an accurate pattern matching method to the pattern is greatly reduced, and the flow of O P C (optical proximity effect correction) and the number of times of layout modification cannot be effectively reduced.
In contrast, the method introduces D R C (design rule checking) result information of the mask design layout in the pattern matching process, carries out fuzzy classification on bad points of L R C (lithography rule checking), establishes a bad point database, and carries out fuzzy matching on a new mask design layout through the bad points in the bad point database, thereby finding out potential L R C bad points of the mask design layout.
[ invention ]
The invention provides a mask design layout fuzzy detection method, a storage medium and pattern repair equipment, which are used for solving the technical problem that patterns in a mask are usually missing or are slightly modified in a large quantity, and the probability of matching the patterns by an accurate pattern matching method is greatly reduced.
The invention provides a mask design layout fuzzy detection method, which comprises the following steps:
providing an initial mask design layout, and obtaining graphic point information of the initial mask design layout;
providing a preset bad point database, breaking the bad point pattern into a plurality of patterns formed by rectangles through design rule inspection in the bad point database so as to carry out fuzzy classification on the bad point information and obtain the bad point information after the fuzzy classification;
and matching the graphic point information in the initial mask design layout with the bad point information in a preset bad point database, and judging that the bad point exists in the initial mask design layout if the matching is successful.
Preferably, constructing the bad point database specifically includes the following steps:
performing photoetching rule inspection on graphic point information in a mask design layout, and extracting bad point information;
Performing fuzzy classification on the bad point information extracted by the photoetching rule inspection;
and storing the bad point information after fuzzy classification into a bad point database.
Preferably, the fuzzy classification of the dead pixel information includes the steps of:
and checking the part which does not accord with the rule in the dead pixel image through the D R C rule to obtain weak points of the width and gap relation, and breaking the polygons in all the graphic frames into the graphics consisting of the rectangles.
Preferably, after extracting the dead pixel information and before performing fuzzy classification, the method further comprises the following steps:
expanding the dead pixel images in the dead pixel information outwards to obtain expanded dead pixel images;
and storing the images of the dead spots before and after expansion into the dead spot information.
Preferably, the bad point information after fuzzy classification is stored in a bad point database, and the following steps are needed:
and cutting out a design layout of the dead point patterns by using a boundary box of one pattern in each dead point grade, wherein the design layout is stored in a G D S file format.
Preferably, the matching rule of the bad point information in the preset bad point database is fuzzy matching, and specifically comprises the following steps:
splitting the graph in the bad point database into a plurality of rectangles according to a first preset splitting rule;
Splitting the initial mask design layout into a plurality of rectangles with a second preset splitting rule,
selecting rectangles with widths and gaps within a preset range;
calculating the position information of rectangles obtained by two splitting rules in a graphic frame, and calculating the size information of the rectangles;
according to the position information of the rectangle in the graphic frame obtained by splitting the initial mask design layout, the possible graphic position is reversely pushed;
and matching the position and size information of the rectangle obtained by splitting the initial mask design layout with the rectangle obtained by splitting the graph in the bad point database, and calculating the number of the matched rectangles.
Preferably, the first preset splitting rule and/or the second preset splitting rule are D R C rules.
Preferably, the method further comprises the following steps after matching:
continuously matching the graphic point information in the initial mask design layout with the bad point information in a preset bad point database, and if the matching is successful, correcting the initial mask design layout;
and outputting the corrected mask design layout when the matching fails.
The present invention also provides a computer readable storage medium having stored thereon computer program instructions which, when executed by a processor, implement the mask design layout blur detection method described above.
The invention also provides a graph repairing device, which comprises a device running program and a device body for executing the device running program, wherein the device body realizes the mask design layout fuzzy detection method when executing the device running program.
Compared with the prior art, the mask design layout blurring detection method, the storage medium and the pattern repairing equipment provided by the invention have the following advantages:
1. the embodiment of the invention provides a mask design layout blurring detection method, which comprises the following steps: providing an initial mask design layout, and obtaining graphic point information of the initial mask design layout; providing a preset bad point database, breaking the bad point pattern into a plurality of patterns formed by rectangles through design rule inspection in the bad point database so as to carry out fuzzy classification on the bad point information and obtain the bad point information after the fuzzy classification; matching the graphic point information in the initial mask design layout with the bad point information in a preset bad point database, and judging that the bad point exists in the initial mask design layout if the matching is successful.
It will be appreciated that there is typically a lack of pattern or a large number of minor modifications to the pattern in the mask, and the probability of matching to the pattern using an exact pattern matching method is greatly reduced.
It can be understood that the bad point database of the invention comprises bad point information, the bad points in the bad point database are matched with the initial mask design layout, and the bad point detection can be better carried out on the initial mask design layout through the bad points of the bad point database, thereby avoiding the operation of repeatedly using the O P C (optical proximity correction) to check and repair the bad points of the mask design layout, simplifying the process of the bad point check, and greatly improving the detection efficiency.
It should be noted that, the invention also carries out fuzzy classification on the bad point information in the bad point database by a D R C (design rule checking) method, breaks the bad point pattern into patterns formed by a plurality of rectangles, determines the matching degree by the matched rectangles, and then enables similar but different bad point patterns to be represented by one pattern by setting a threshold value, thereby simplifying the number of bad points in the database and reducing the number of patterns matched by the subsequent bad point patterns.
2. The mask design layout fuzzy detection method provided by the embodiment of the invention comprises the following steps of: performing photoetching rule inspection on graphic point information in a mask design layout, and extracting bad point information; performing fuzzy classification on the bad point information extracted by the photoetching rule inspection; and storing the bad point information after fuzzy classification into a bad point database.
It can be appreciated that the invention establishes the dead point database according to the required dead points or the past experience, the dead point database mainly comprises dead point information aiming at the initial mask design layout, the required dead points are adopted, the unnecessary matching is not required in the subsequent matching process, the dead points existing on the mask design layout can be directly replaced and corrected in the subsequent process, the simulation and correction are not required again, the time is saved, the resources consumed by the matching operation are reduced, and the problem of correction errors is avoided.
3. The fuzzy classification of the bad point information comprises the following steps: and checking the part which does not accord with the rule in the dead pixel image through the D R C rule to obtain weak points of the width and gap relation, and breaking the polygons in all the graphic frames into the graphics consisting of the rectangles.
In the invention, D R C (design rule checking) result information of the mask design layout is introduced in the pattern matching process, bad points of L R C (lithography rule checking) are subjected to fuzzy classification, a bad point database is established, and new mask design layout is subjected to fuzzy matching through the bad points in the bad point database, so that potential L R C bad points in the mask design layout are found.
It can be understood that the invention can select the dead pixel in the dead pixel library according to the condition of the initial mask design layout or the type of the dead pixel in the mask design layout to be repaired according to the requirement, thereby selecting the dead pixel in the required dead pixel library to match with the mask design layout to be repaired.
4. The mask design layout fuzzy detection method provided by the embodiment of the invention further comprises the following steps after the dead pixel information is extracted and before fuzzy classification is carried out: expanding the dead pixel images in the dead pixel information outwards to obtain expanded dead pixel images; and storing the images of the dead spots before and after expansion into the dead spot information.
It will be appreciated that the simulation of a chip mask design is complex and time consuming, and that the modification of the mask is a repetitive and cumbersome process, as the pattern of the mask design layout is typically repetitive, so are the sites where bad spots are generated.
It should be noted that, the pattern of the mask design layout has repeatability, and meanwhile, there is a large amount of tiny differences or pattern missing, so that the hash check values are different and the bad points cannot be classified and the positions of the bad points can not be detected, and the probability of successful matching can be improved by expanding the bad point images in the bad point information outwards.
5. The mask design layout fuzzy detection method provided by the embodiment of the invention stores the bad point information after fuzzy classification into a bad point database, and the method comprises the following steps: cutting out a design layout of the dead pixel graph by using a boundary box of one graph in each dead pixel level, and storing the design layout in a G D S file format.
It can be understood that the bad point information stored in the bad point database is cut out in advance by utilizing the boundary box of the graph so as to facilitate the matching of the initial mask design layout to the bad point information in the follow-up process; it should be noted that the gs file format is the format of the graphic data description language file most commonly used in the design of integrated circuit board diagrams.
6. The fuzzy detection method for the mask design layout provided by the embodiment of the invention is fuzzy matching with the matching rule of the bad point information in the preset bad point database, and specifically comprises the following steps: splitting the graph in the bad point database into a plurality of rectangles according to a first preset splitting rule; splitting the initial mask design layout into a plurality of rectangles according to a second preset splitting rule, and selecting the rectangles with widths and gaps within a preset range; calculating the position information of rectangles obtained by two splitting rules in a graphic frame, and calculating the size information of the rectangles; according to the position information of the rectangle in the graphic frame obtained by splitting the initial mask design layout, the possible graphic position is reversely pushed; and matching the position and size information of the rectangle obtained by splitting the initial mask design layout with the rectangle obtained by splitting the graph in the bad point database, and calculating the number of the matched rectangles.
It can be appreciated that the invention introduces a fuzzy matching method, so that when matching graphics, the mask design layout with incomplete polygons and certain modification can be matched, and the probability of successful matching is improved.
When a large number of dead pixels are detected, fuzzy matching is adopted to match, so that the time required for matching can be reduced, the optimal matching effect can be achieved, and meanwhile, unnecessary operation can be reduced.
7. According to the mask design layout fuzzy detection method provided by the embodiment of the invention, the first preset splitting rule and/or the second preset splitting rule are D R C rules.
It can be appreciated that the first preset splitting rule is used to split the graph in the bad point database into a plurality of rectangles, the second preset splitting rule is used to split the initial mask design layout into a plurality of rectangles, and rectangles with widths and gaps within the preset range are selected.
It should be noted that, by using the D R C rule to perform fuzzy classification on the patterns in the dead point database and the patterns in the initial mask design layout, the matching degree is determined by the matched rectangle, and the dead point patterns similar but not identical to each other can be represented by the same pattern by setting a threshold value, so as to simplify the number of dead points in the dead point database and reduce the number of patterns matched by the subsequent dead point patterns.
8. The mask design layout blurring detection method provided by the embodiment of the invention further comprises the following steps after matching: continuously matching the graphic point information in the initial mask design layout with the bad point information in a preset bad point database, and if the matching is successful, correcting the initial mask design layout; and outputting the corrected mask design layout when the matching fails.
It can be understood that after the initial graph dead pixel replacement and correction are completed, the corrected mask design layout is output, and the corrected mask design layout can be obtained without performing simulation operation on the initial mask design layout, namely, the corrected mask design layout can be directly output.
Performing simulation of key areas aiming at the global design patterns, performing bad point matching on the bad point patterns in the mask design layout and a bad point database, and then performing replacement correction on the patterns to be corrected in the mask design layout by using correction points corresponding to the bad points; through the design, time can be greatly saved, and only a small amount of operation is needed to correct the mask design layout, so that resources are greatly saved. It can be understood that the part of the initial mask design layout which is successfully matched with the dead pixel of the matching library is directly replaced by the correction point corresponding to the dead pixel, so that the time required for repairing the mask design layout can be reduced.
9. The embodiment of the invention also provides a computer readable storage medium, on which computer program instructions are stored, which when executed by a processor, implement the mask design layout blur detection method described above.
The computer readable storage medium has the same advantages as the mask design layout blur detection method described above, and will not be described here.
10. The embodiment of the invention also provides a graph repairing device which comprises a device running program and a device body for executing the device running program, wherein the device body realizes the mask design layout fuzzy detection method when executing the device running program.
The graphic repairing device has the same beneficial effects as the mask design layout blurring detection method, and detailed description is omitted here.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a mask design layout blur detection method according to a first embodiment of the present invention.
Fig. 2 is a schematic flowchart of step S2 in a mask design layout blur detection method according to the first embodiment of the present invention.
Fig. 3 is a schematic diagram of points constituting a rectangle obtained by D R C (design rule check) in step S22 of a mask design layout blur detection method according to the first embodiment of the present invention.
Fig. 4 is a schematic diagram of breaking polygons in a graphics frame into a graphics composed of rectangles in step S22 of a mask design layout blur detection method according to a first embodiment of the present invention.
Fig. 5 is a schematic diagram of checking the intersection number of rectangular center distances in a graph in step S22 of a mask design layout blur detection method according to the first embodiment of the present invention.
Fig. 6 is a schematic flowchart of a mask design layout blur detection method according to the first embodiment of the present invention, which is executed after step S21 and before step S22.
Fig. 7 is a schematic flowchart of step S3 in a mask design layout blur detection method according to the first embodiment of the present invention.
FIG. 8 is a schematic diagram of a mask design layout blur detection method according to the first embodiment of the present invention, in which step S34 is a graph frame that is reversely deduced from a rectangle.
Fig. 9 is a schematic flowchart of a mask design layout blur detection method according to the first embodiment of the present invention, which is executed after step S3.
Fig. 10 is a schematic diagram of a frame of a computer-readable storage medium according to a second embodiment of the present invention.
Fig. 11 is a schematic diagram of a framework of a graphic repair apparatus according to a third embodiment of the present invention.
The attached drawings are used for identifying and describing:
1. a computer-readable storage medium; 11. computer program instructions;
2. a graphic repair device; 21. the equipment runs a program; 22. an apparatus body.
[ detailed description ] of the invention
The present invention will be described in further detail with reference to the accompanying drawings and examples of implementation in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
In the embodiments provided herein, it should be understood that "B corresponding to a" means that B is associated with a, from which B can be determined. It should also be understood that determining B from a does not mean determining B from a alone, but may also determine B from a and/or other information.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. Those skilled in the art will also appreciate that the embodiments described in the specification are alternative embodiments and that the acts and modules referred to are not necessarily required for the present invention.
In various embodiments of the present invention, it should be understood that the sequence numbers of the foregoing processes do not imply that the execution sequences of the processes should be determined by the functions and internal logic of the processes, and should not be construed as limiting the implementation of the embodiments of the present invention.
The flowcharts and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
The technical scheme of the invention applies D R C (design rule checking) result information of a mask design layout introduced in a pattern matching process, carries out fuzzy classification on bad points of L R C (lithography rule checking), establishes a bad point database, matches a new mask design layout through a fuzzy pattern matching method through the bad points in the database, and thus finds potential L R C bad points of the mask design layout. The following will explain the embodiments of the present invention.
Specifically, referring to fig. 1, a first embodiment of the present invention provides a mask design layout blur detection method, which includes the following steps:
s1: providing an initial mask design layout, and obtaining graphic point information of the initial mask design layout;
s2: providing a preset bad point database, breaking the bad point pattern into a plurality of patterns formed by rectangles through design rule inspection in the bad point database so as to carry out fuzzy classification on the bad point information and obtain the bad point information after the fuzzy classification;
s3: matching the graphic point information in the initial mask design layout with the bad point information in a preset bad point database, and judging that the bad point exists in the initial mask design layout if the matching is successful.
It can be understood that, if an exact matching algorithm is used, only the patterns with the same absolute pattern can be successfully matched, and the probability of matching the patterns by adopting the exact pattern matching method is greatly reduced, and the bad point database provided by the first embodiment of the invention comprises bad point information, a large number of bad points are stored in the bad point information, and the initial mask design layout and the bad points in the bad point database are matched; the method and the device adopt a fuzzy pattern matching method to match, and through the design, the method and the device can better detect the dead pixel of the initial mask design layout through the dead pixel in the database, avoid the operation of repeatedly using OPC (optical proximity correction) to check and repair the dead pixel of the mask design layout, simplify the flow of the dead pixel check, and greatly improve the detection efficiency.
OPC (Optical Proximity Correction) represents an optical proximity correction, i.e., a lithography correction. OPC is a technique for correcting deviations of a lithographic pattern in a chip manufacturing process, mainly by introducing small variations in the lithographic pattern to solve non-ideal effects such as optical scattering, refraction, etc. in the optical image forming process. The main objective of OPC is to improve parameters such as line Width (Width) control, pattern Alignment (Alignment), depth of Focus (Depth of Focus) and the like of a chip to improve manufacturing accuracy and performance of the chip.
It should be further noted that, the invention further carries out fuzzy classification on the dead pixel information in the dead pixel database by DRC (design rule checking) method, breaks the dead pixel pattern into patterns formed by a plurality of rectangles, determines the matching degree by the matched rectangles, and sets a threshold value to enable the similar but different dead pixel patterns to be represented by one pattern, thereby simplifying the dead pixel number in the database and reducing the pattern number of the subsequent dead pixel pattern matching.
Wherein the threshold value represents the proportion of the matched rectangle, and the threshold value is manually set, and when the set threshold value is higher, the blurring degree of the matched rectangle is lower; when the set threshold value is lower, the blurring degree of the matched rectangle is higher, and the bad dot pattern in the bad dot database is used as a reference to be matched with the pattern dot information in the initial mask design layout, so that the OPC flow and the modification times of the layout can be effectively reduced, and the probability of successful matching is improved.
Specifically, when the set threshold is 100%, the matching can be approximately accurate, that is, the technical scheme provided by the application can meet the fuzzy matching of the dead pixel information and the accurate matching of the dead pixel information.
DRC (Design Rule Check), which represents a design rule check, is a basic function in Electronic Design Automation (EDA) tools for checking whether the design meets the requirements of the manufacturing process, and ensuring the correctness and manufacturability of the design. DRC inspection comprises line width, space, area, holes and other aspects, and is mainly limited by design process, and the DRC inspection is formulated according to actual process so as to ensure that the final manufacturing result of the chip meets the specification requirement; specifically, the flow of DRC inspection is generally divided into two parts, namely "basic rule inspection", which is usually the most basic rule in inspecting chip design, such as the rule of line width, line-to-line distance, device pitch, etc., and "special rule inspection", which is to adjust the rule according to the actual situation of chip design to achieve the optimal manufacturing effect.
In the production process of the chip, the step of checking the drc is very important, because any manufacturing problem of the chip may cause damage to the finished chip, and the damage to the finished chip consumes huge production cost and design cost.
As an alternative embodiment, referring to fig. 2, constructing the dead point database specifically includes the following steps:
S21: performing photoetching rule inspection on graphic point information in a mask design layout, and extracting bad point information;
s22: performing fuzzy classification on the bad point information extracted by the photoetching rule inspection;
s23: and storing the bad point information after fuzzy classification into a bad point database.
It can be appreciated that the present invention builds a dead spot database based on the required dead spots or past experience, which includes primarily dead spot information for the original mask design layout.
Further, by adopting the required dead pixels, unnecessary matching in the subsequent matching process can be ensured, so that the dead pixels existing on the mask design layout can be directly replaced and corrected in the subsequent process, simulation and simulation correction are not required again, time is saved, resources consumed by matching operation are reduced, and correction errors are avoided.
In step S22, the fuzzy classification of the dead pixel information includes the steps of:
and checking the part which does not accord with the rule in the dead pixel image through the D R C rule to obtain weak points of the width and gap relation, and breaking the polygons in all the graphic frames into the graphics consisting of the rectangles.
It should be noted that, the weak points of the relation between the width and the gap refer to placing detection points on the analog image, checking the values of the width and/or the gap on the detection points, and when the values do not accord with the set threshold value, the detection points are marked as dead points; the threshold value is manually set, that is, the proportion of the matched rectangle, when the set threshold value is higher, the blurring degree of the matched rectangle is lower, and when the set threshold value is 100%, the matching can be approximated to be accurate.
Specifically, referring to fig. 3 and 4, in a preferred embodiment of the present invention, the dead pixel information extracted after performing the lrc (lithography rule inspection) is subjected to fuzzy classification, and weak points of the width and void relationship are obtained through the lrc (design rule inspection), specifically, two end points of the short side and two points on the long side corresponding to projection of the short side to the long side are configured into rectangles, and then polygons in all the graphic frames are broken into graphics composed of the rectangles.
LRC (Lithography Rule Checking), which represents a photolithography rule check, refers to knowing manufacturability issues that the chip design may face in the future in advance through a photolithography imaging model before performing a photolithography process, so as to reduce the probability of integrated circuit manufacturing failure as much as possible.
Further, after breaking polygons in all the graphic frames into graphics composed of rectangles, the specific determination method for performing fuzzy classification on dead pixels is as follows:
record length and height of all rectangles in each graphic frame, set rectangle in one of the graphic framesLength and height of (2) are respectively length 1 、height 1 The length and height of the rectangle in the other graphic frame are respectively length 2 、height 2
If the rectangle in the two graphic frames satisfies
length 1 =length 2 ∧height 1 =height 2
Or alternatively
length 1 =height 2 ∧height 1 =length 2
It is determined that the two rectangles are equal, where a is a logical or operator.
If the equal rectangles exceed the set threshold, i.e. the number of rectangles within the graphic frame multiplied by tolerance (tolerance, i.e. the ratio of the different rectangles tolerated), then the next decision operation can be performed.
The threshold and tolerance set above can be adjusted according to different application scenarios or use environments, the invention is not limited to the threshold and tolerance, and can be set according to specific practical situations, and any modification, equivalent replacement, improvement, etc. within the principle of the invention should be included in the protection scope of the invention.
Referring to FIG. 5, the number of intersections of the center distances of the rectangles in the pattern is checked, and if the number of intersections of the center distances exceeds the number of intersections of n rectangles for the pattern having n rectangles It is determined that the two patterns match successfully.
It should be further noted that, in the present invention, DRC (design rule inspection) result information of a mask design layout is introduced in the pattern matching process, fuzzy classification is performed on the bad points of the LRC (lithography rule inspection), a bad point database is established, and the new mask design layout is subjected to fuzzy matching through the bad points in the bad point database, so as to find the potential LRC bad points in the mask design layout.
It can be understood that the invention can select the dead pixel in the dead pixel library according to the condition of the initial mask design layout or the type of the dead pixel in the mask design layout to be repaired according to the requirement, thereby selecting the dead pixel in the required dead pixel library to match with the mask design layout to be repaired.
Specifically, referring to fig. 6, after extracting the dead pixel information and before performing fuzzy classification, the method further includes the following steps:
s211: expanding the dead pixel images in the dead pixel information outwards to obtain expanded dead pixel images;
s212: and storing the images of the dead spots before and after expansion into the dead spot information.
It can be appreciated that the simulation of the chip mask design is complex and time consuming, and the modification of the mask is a repetitive and cumbersome process, as the pattern of the mask design layout is usually repetitive, so the sites where bad spots are generated are also repetitive; the method is characterized in that the bad point image is expanded outwards, specifically, the user manually sets a numerical value to expand the same length from the up direction, the down direction, the left direction and the right direction of the bad point image to form a square, because the mask design layout image which is closer to the center has larger influence on the bad point.
It should be further noted that, in the photolithography rule inspection, the design layout of the chip is subjected to a process of simulating photolithography to obtain an approximate real image printed on the silicon wafer, while the pattern of the mask design layout has repeatability and also has a large number of tiny differences or pattern missing, so that the hash check values are different and bad points cannot be classified and the positions of the bad points cannot be detected, and the probability of successful matching can be improved by expanding the bad point images in the bad point information outwards.
Further, the bad point information after fuzzy classification is stored in a bad point database, and the following steps are needed:
cutting out a design layout of the dead pixel graph by using a boundary box of one graph in each dead pixel level, and storing the design layout in a G D S file format.
It can be appreciated that the defective pixel information stored in the defective pixel database is cut out in advance by using a boundary box of the graph, so that the matching of the initial mask design layout to the defective pixel information is facilitated.
It should be noted that the gD file format is the most commonly used graphic data description language file format in the design of integrated circuit board; as a standard file format in semiconductor chip design, GD S files are used to store layout information of the chip.
As another alternative embodiment, referring to fig. 7, the matching rule with the dead pixel information in the preset dead pixel database is fuzzy matching, which specifically includes the following steps:
s31: splitting the graph in the bad point database into a plurality of rectangles according to a first preset splitting rule;
s32: splitting the initial mask design layout into a plurality of rectangles according to a second preset splitting rule, and selecting the rectangles with widths and gaps within a preset range;
s33: calculating the position information of rectangles obtained by two splitting rules in a graphic frame, and calculating the size information of the rectangles;
s34: according to the position information of the rectangle in the graphic frame obtained by splitting the initial mask design layout, the possible graphic position is reversely pushed;
S35: and matching the position and size information of the rectangle obtained by splitting the initial mask design layout with the rectangle obtained by splitting the graph in the bad point database, and calculating the number of the matched rectangles.
In step S31, the same method as that used to construct the bad data database is used to find all widths and void ranges of the graph through the D R C rule, so as to split the graph in the bad data database into a plurality of rectangles; in step S32, the width and void relation of the original mask design layout is obtained in the same manner by the D R C rule in step S31, the mask design layout is split into rectangles, and only the rectangles whose width and void are within a preset range are left.
For step S33, calculating the position information of rectangles within the graphic frame obtained by two splitting rules, and calculating the size information of these rectangles; specifically, the position relation and the size relation of all rectangles on the graph relative to the lower left corner of the graph frame are calculated, x is taken as the abscissa of the center of the rectangle relative to the lower left corner of the graph frame, y is taken as the ordinate of the center of the rectangle relative to the lower left corner of the graph frame, dx is taken as the width of the rectangle, and dy is taken as the height of the rectangle.
Referring to fig. 8, for step S34, it is necessary to find two rectangles of the same size within the graphic frame, and four cases can be deduced from two cases of rectangles (same angle and 90 degrees rotation in the graphic): the four possible rectangle in the graphic frame can be obtained for each rectangle, and the eight pushed-out graphic frame cases can be obtained after four conditions are pushed out by two conditions; in step S35, when matching the graphics position and size information, all rectangles in the four possible graphics frames are checked, and if the number of rectangles exceeds a set threshold ratio, it is determined that the matching is successful.
It can be appreciated that the invention introduces a fuzzy matching method, so that when matching graphics, the mask design layout with incomplete polygons and certain modification can be matched, and the probability of successful matching is improved.
Further, when a large number of dead pixels are detected, fuzzy matching is adopted to match, so that the time required for matching can be reduced, the optimal matching effect can be achieved, and meanwhile, unnecessary operation can be reduced.
Further, the first preset splitting rule and/or the second preset splitting rule are D R C rules.
In the first embodiment of the present invention, the first preset splitting rule and the second preset splitting rule are both D R C rules as examples. The specific splitting rules of the graphics and the initial mask design layout in the bad data database can be determined according to actual requirements, the invention is only illustrated by an embodiment, and any modification, equivalent replacement, improvement and the like which are within the principle of the invention are included in the protection scope of the invention.
It should be noted that, by using the D R C rule to perform fuzzy classification on the patterns in the dead point database and the patterns in the initial mask design layout, the matching degree is determined by the matched rectangle, and the dead point patterns similar but not identical to each other can be represented by the same pattern by setting a threshold value, so as to simplify the number of dead points in the dead point database and reduce the number of patterns matched by the subsequent dead point patterns.
As yet another alternative embodiment, referring to fig. 9, the method further includes the following steps after matching:
s4: continuously matching the graphic point information in the initial mask design layout with the bad point information in a preset bad point database, and if the matching is successful, correcting the initial mask design layout;
s5: and outputting the corrected mask design layout when the matching fails.
It can be understood that after the initial graph dead pixel replacement and correction are completed, the corrected mask design layout is output, the corrected mask design layout can be obtained without performing simulation operation on the initial mask design layout, and the corrected mask design layout is directly output.
Performing simulation of key areas aiming at the global design patterns, performing bad point matching on the bad point patterns in the mask design layout and a bad point database, and then performing replacement correction on the patterns to be corrected in the mask design layout by using correction points corresponding to the bad points; through the design, time can be greatly saved, and only a small amount of operation is needed to correct the mask design layout, so that resources are greatly saved. It can be understood that the part of the initial mask design layout which is successfully matched with the dead pixel in the dead pixel database is directly replaced by the correction point corresponding to the dead pixel, so that the time required for repairing the mask design layout can be reduced.
Referring to fig. 10, a third embodiment of the present invention provides a computer readable storage medium 1 having stored thereon computer program instructions 11, the computer program instructions 11 implementing the mask design layout blur detection method described above when executed by a processor.
It will be appreciated that the computer-readable storage medium 1 of the second embodiment of the present invention has stored therein computer program instructions 11, the computer program instructions 11 being executable by a processor to invoke a mask design layout blur detection method as described in the first embodiment above.
It should be noted that the computer-readable storage medium 1 has the same advantages as the above-mentioned mask design layout blur detection method, and will not be described herein.
In particular, the computer-readable storage medium 1 may be an electronic memory such as a flash memory, an EEPtROM (electrically erasable programmable read Only memory), an EPtROM, a hard disk, or an RoM; alternatively, the computer-readable storage medium 1 includes a nonvolatile computer-readable medium.
In particular, the computer-readable storage medium 1 has storage space for computer program instructions 11 that perform any of the method steps described above, which program instructions may be read from or written to one or more computer program products; alternatively, the computer program instructions 11 may be compressed in a suitable form.
Referring to fig. 11, a third embodiment of the present invention provides a graphic repair device 2, which includes a device running program 21 and a device body 22 executing the device running program 21, wherein the device body 22 implements the mask design layout blur detection method described above when executing the device running program 21.
It will be appreciated that when the pattern repair apparatus 2 according to the second embodiment of the present invention is operated, the apparatus body 22 executes the apparatus operation program 21 to implement the mask design layout blur detection method described in the first embodiment.
It should be noted that, the graphic repairing apparatus 2 has the same advantages as the above-mentioned method for detecting blurring of a mask design layout, and will not be described herein.
Compared with the prior art, the mask design layout blurring detection method, the storage medium and the pattern repairing equipment provided by the invention have the following advantages:
1. the embodiment of the invention provides a mask design layout blurring detection method, which comprises the following steps: providing an initial mask design layout, and obtaining graphic point information of the initial mask design layout; providing a preset bad point database, breaking the bad point pattern into a plurality of patterns formed by rectangles through design rule inspection in the bad point database so as to carry out fuzzy classification on the bad point information and obtain the bad point information after the fuzzy classification; matching the graphic point information in the initial mask design layout with the bad point information in a preset bad point database, and judging that the bad point exists in the initial mask design layout if the matching is successful.
It will be appreciated that there is typically a lack of pattern or a large number of minor modifications to the pattern in the mask, and the probability of matching to the pattern using an exact pattern matching method is greatly reduced.
It can be understood that the bad point database of the invention comprises bad point information, the bad points in the bad point database are matched with the initial mask design layout, and the bad point detection can be better carried out on the initial mask design layout through the bad points of the bad point database, thereby avoiding the operation of repeatedly using the O P C (optical proximity correction) to check and repair the bad points of the mask design layout, simplifying the process of the bad point check, and greatly improving the detection efficiency.
It should be noted that, the invention also carries out fuzzy classification on the bad point information in the bad point database by a D R C (design rule checking) method, breaks the bad point pattern into patterns formed by a plurality of rectangles, determines the matching degree by the matched rectangles, and then enables similar but different bad point patterns to be represented by one pattern by setting a threshold value, thereby simplifying the number of bad points in the database and reducing the number of patterns matched by the subsequent bad point patterns.
2. The mask design layout fuzzy detection method provided by the embodiment of the invention comprises the following steps of: performing photoetching rule inspection on graphic point information in a mask design layout, and extracting bad point information; performing fuzzy classification on the bad point information extracted by the photoetching rule inspection; and storing the bad point information after fuzzy classification into a bad point database.
It can be appreciated that the invention establishes the dead point database according to the required dead points or the past experience, the dead point database mainly comprises dead point information aiming at the initial mask design layout, the required dead points are adopted, the unnecessary matching is not required in the subsequent matching process, the dead points existing on the mask design layout can be directly replaced and corrected in the subsequent process, the simulation and correction are not required again, the time is saved, the resources consumed by the matching operation are reduced, and the problem of correction errors is avoided.
3. The fuzzy classification of the bad point information comprises the following steps: and checking the part which does not accord with the rule in the dead pixel image through the D R C rule to obtain weak points of the width and gap relation, and breaking the polygons in all the graphic frames into the graphics consisting of the rectangles.
In the invention, D R C (design rule checking) result information of the mask design layout is introduced in the pattern matching process, bad points of L R C (lithography rule checking) are subjected to fuzzy classification, a bad point database is established, and new mask design layout is subjected to fuzzy matching through the bad points in the bad point database, so that potential L R C bad points in the mask design layout are found.
It can be understood that the invention can select the dead pixel in the dead pixel library according to the condition of the initial mask design layout or the type of the dead pixel in the mask design layout to be repaired according to the requirement, thereby selecting the dead pixel in the required dead pixel library to match with the mask design layout to be repaired.
4. The mask design layout fuzzy detection method provided by the embodiment of the invention further comprises the following steps after the dead pixel information is extracted and before fuzzy classification is carried out: expanding the dead pixel images in the dead pixel information outwards to obtain expanded dead pixel images; and storing the images of the dead spots before and after expansion into the dead spot information.
It will be appreciated that the simulation of a chip mask design is complex and time consuming, and that the modification of the mask is a repetitive and cumbersome process, as the pattern of the mask design layout is typically repetitive, so are the sites where bad spots are generated.
It should be noted that, the pattern of the mask design layout has repeatability, and meanwhile, there is a large amount of tiny differences or pattern missing, so that the hash check values are different and the bad points cannot be classified and the positions of the bad points can not be detected, and the probability of successful matching can be improved by expanding the bad point images in the bad point information outwards.
5. The mask design layout fuzzy detection method provided by the embodiment of the invention stores the bad point information after fuzzy classification into a bad point database, and the method comprises the following steps: cutting out a design layout of the dead pixel graph by using a boundary box of one graph in each dead pixel level, and storing the design layout in a G D S file format.
It can be understood that the bad point information stored in the bad point database is cut out in advance by utilizing the boundary box of the graph so as to facilitate the matching of the initial mask design layout to the bad point information in the follow-up process; it should be noted that the GD S file format is the format of graphic data description language file most commonly used in the design of integrated circuit board.
6. The fuzzy detection method for the mask design layout provided by the embodiment of the invention is fuzzy matching with the matching rule of the bad point information in the preset bad point database, and specifically comprises the following steps: splitting the graph in the bad point database into a plurality of rectangles according to a first preset splitting rule; splitting the initial mask design layout into a plurality of rectangles according to a second preset splitting rule, and selecting the rectangles with widths and gaps within a preset range; calculating the position information of rectangles obtained by two splitting rules in a graphic frame, and calculating the size information of the rectangles; according to the position information of the rectangle in the graphic frame obtained by splitting the initial mask design layout, the possible graphic position is reversely pushed; and matching the position and size information of the rectangle obtained by splitting the initial mask design layout with the rectangle obtained by splitting the graph in the bad point database, and calculating the number of the matched rectangles.
It can be appreciated that the invention introduces a fuzzy matching method, so that when matching graphics, the mask design layout with incomplete polygons and certain modification can be matched, and the probability of successful matching is improved.
When a large number of dead pixels are detected, fuzzy matching is adopted to match, so that the time required for matching can be reduced, the optimal matching effect can be achieved, and meanwhile, unnecessary operation can be reduced.
7. According to the mask design layout fuzzy detection method provided by the embodiment of the invention, the first preset splitting rule and/or the second preset splitting rule are D R C rules.
It can be appreciated that the first preset splitting rule is used to split the graph in the bad point database into a plurality of rectangles, the second preset splitting rule is used to split the initial mask design layout into a plurality of rectangles, and rectangles with widths and gaps within the preset range are selected.
It should be noted that, by using the D R C rule to perform fuzzy classification on the patterns in the dead point database and the patterns in the initial mask design layout, the matching degree is determined by the matched rectangle, and the dead point patterns similar but not identical to each other can be represented by the same pattern by setting a threshold value, so as to simplify the number of dead points in the dead point database and reduce the number of patterns matched by the subsequent dead point patterns.
8. The mask design layout blurring detection method provided by the embodiment of the invention further comprises the following steps after matching: continuously matching the graphic point information in the initial mask design layout with the bad point information in a preset bad point database, and if the matching is successful, correcting the initial mask design layout; and outputting the corrected mask design layout when the matching fails.
It can be understood that after the initial graph dead pixel replacement and correction are completed, the corrected mask design layout is output, and the corrected mask design layout can be obtained without performing simulation operation on the initial mask design layout, namely, the corrected mask design layout can be directly output.
Performing simulation of key areas aiming at the global design patterns, performing bad point matching on the bad point patterns in the mask design layout and a bad point database, and then performing replacement correction on the patterns to be corrected in the mask design layout by using correction points corresponding to the bad points; through the design, time can be greatly saved, and only a small amount of operation is needed to correct the mask design layout, so that resources are greatly saved. It can be understood that the part of the initial mask design layout which is successfully matched with the dead pixel of the matching library is directly replaced by the correction point corresponding to the dead pixel, so that the time required for repairing the mask design layout can be reduced.
9. The embodiment of the invention also provides a computer readable storage medium, on which computer program instructions are stored, which when executed by a processor, implement the mask design layout blur detection method described above.
The computer readable storage medium has the same advantages as the mask design layout blur detection method described above, and will not be described here.
10. The embodiment of the invention also provides a graph repairing device which comprises a device running program and a device body for executing the device running program, wherein the device body realizes the mask design layout fuzzy detection method when executing the device running program.
The graphic repairing device has the same beneficial effects as the mask design layout blurring detection method, and detailed description is omitted here.
The above describes in detail a mask design layout blur detection method, a storage medium and a pattern repair device disclosed in the embodiments of the present invention, and specific examples are applied to illustrate the principles and embodiments of the present invention, where the above description of the embodiments is only used to help understand the method and core idea of the present invention; meanwhile, as for those skilled in the art, according to the idea of the present invention, there are changes in the specific embodiments and the application scope, and in summary, the present disclosure should not be construed as limiting the present invention, and any modifications, equivalent substitutions and improvements made within the principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A mask design layout blurring detection method is characterized by comprising the following steps:
providing an initial mask design layout, and obtaining graphic point information of the initial mask design layout;
providing a preset bad point database, breaking the bad point pattern into a plurality of patterns formed by rectangles through design rule inspection in the bad point database so as to carry out fuzzy classification on the bad point information and obtain the bad point information after the fuzzy classification;
and matching the graphic point information in the initial mask design layout with the bad point information in a preset bad point database, and judging that the bad point exists in the initial mask design layout if the matching is successful.
2. The mask design layout blur detection method according to claim 1, wherein constructing the bad point database specifically comprises the steps of:
performing photoetching rule inspection on graphic point information in a mask design layout, and extracting bad point information;
performing fuzzy classification on the bad point information extracted by the photoetching rule inspection;
and storing the bad point information after fuzzy classification into a bad point database.
3. The mask design layout blur detection method according to claim 2, wherein the blur classification of the dead pixel information comprises the steps of:
And checking the part which does not accord with the rule in the dead pixel image through the D R C rule to obtain weak points of the width and gap relation, and breaking the polygons in all the graphic frames into the graphics consisting of the rectangles.
4. The mask design layout blur detection method according to claim 3, further comprising the steps of, after extracting the dead pixel information, before performing blur classification:
expanding the dead pixel images in the dead pixel information outwards to obtain expanded dead pixel images;
and storing the images of the dead spots before and after expansion into the dead spot information.
5. The mask design layout blur detection method according to claim 4, wherein storing the blur-classified bad point information into the bad point database requires the following steps:
and cutting out a design layout of the dead point patterns by using a boundary box of one pattern in each dead point grade, wherein the design layout is stored in a G D S file format.
6. The mask design layout ambiguity detection method according to claim 1, wherein the matching rule with the bad point information in the preset bad point database is ambiguity matching, and specifically comprises the following steps:
splitting the graph in the bad point database into a plurality of rectangles according to a first preset splitting rule;
Splitting the initial mask design layout into a plurality of rectangles according to a second preset splitting rule, and selecting the rectangles with widths and gaps within a preset range;
calculating the position information of rectangles obtained by two splitting rules in a graphic frame, and calculating the size information of the rectangles;
according to the position information of the rectangle in the graphic frame obtained by splitting the initial mask design layout, the possible graphic position is reversely pushed;
and matching the position and size information of the rectangle obtained by splitting the initial mask design layout with the rectangle obtained by splitting the graph in the bad point database, and calculating the number of the matched rectangles.
7. The mask design layout blur detection method according to claim 6, wherein:
the first preset splitting rule and/or the second preset splitting rule are D R C rules.
8. The mask design layout blur detection method according to claim 1, wherein the method further comprises the following steps after the matching:
continuously matching the graphic point information in the initial mask design layout with the bad point information in a preset bad point database, and if the matching is successful, correcting the initial mask design layout;
and outputting the corrected mask design layout when the matching fails.
9. A computer readable storage medium having stored thereon computer program instructions, characterized by:
the computer program instructions, when executed by a processor, implement the mask design layout blur detection method of any one of claims 1-8.
10. A graphic repair apparatus, characterized in that:
the mask design layout fuzzy detection method comprises an equipment running program and an equipment body for executing the equipment running program, wherein the equipment body realizes the mask design layout fuzzy detection method according to any one of claims 1-8 when executing the equipment running program.
CN202311140408.4A 2023-09-05 2023-09-05 Mask design layout blurring detection method, storage medium and pattern repairing equipment Pending CN117389114A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117891143A (en) * 2024-02-21 2024-04-16 广东工业大学 Photoetching hot spot detection method based on 2D overlapping judgment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117891143A (en) * 2024-02-21 2024-04-16 广东工业大学 Photoetching hot spot detection method based on 2D overlapping judgment

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