CN115906751A - Mask layout correction method - Google Patents

Mask layout correction method Download PDF

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Publication number
CN115906751A
CN115906751A CN202211289154.8A CN202211289154A CN115906751A CN 115906751 A CN115906751 A CN 115906751A CN 202211289154 A CN202211289154 A CN 202211289154A CN 115906751 A CN115906751 A CN 115906751A
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mask layout
dead pixel
matching
library
graph
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介浩宇
丁明
闫歌
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Shenzhen Jingyuan Information Technology Co Ltd
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Shenzhen Jingyuan Information Technology Co Ltd
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Priority to PCT/CN2022/133978 priority Critical patent/WO2023134309A1/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72Repair or correction of mask defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Processing Or Creating Images (AREA)
  • Closed-Circuit Television Systems (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

The invention relates to the technical field of photoetching friendliness, in particular to a mask layout correction method, which comprises the following steps: providing an initial mask layout, and acquiring graph point information in the initial mask layout by using the mask layout; matching the graph point information in the initial mask layout with dead pixel information in a preset mask layout matching library, wherein the mask layout matching library comprises the dead pixel information of the mask layout and correction point information corresponding to the dead pixel information of the mask layout; and if the dead pixel information is matched with the information of a certain figure point in the initial mask layout, correcting the initial mask layout by using the correction point information corresponding to the dead pixel of the mask layout. The invention provides a mask layout repairing method, aiming at solving the problem that the existing mask layout correcting method needs to consume huge computing resources.

Description

Mask layout correction method
Technical Field
The invention relates to the technical field of graph repair, in particular to a mask layout correction method.
Background
The simulation model simulates the optical process in the photoetching machine, so that a designer can observe the imaging result of the design without actual production, and the design graph is corrected according to the imaging result to improve the yield and the stability during production.
However, correcting the reticle using the existing reticle correction method requires a huge amount of computing resources and time.
Disclosure of Invention
The invention provides a mask layout repairing method, aiming at solving the problem that the existing mask layout correcting method needs to consume huge computing resources.
In order to solve the technical problems, the invention provides the following technical scheme: a mask layout correction method comprises the following steps: providing an initial mask layout, wherein the initial mask layout comprises a plurality of graphic points, and each graphic point has corresponding graphic point information; matching the graph point information in the initial mask layout with dead pixel information in a preset mask layout matching library, wherein the matching library comprises mask layout dead pixel information and correction point information corresponding to the mask layout dead pixels; and if the dead pixel information is matched with the information of a certain figure point in the initial mask layout, correcting the initial mask layout by using the correction point information corresponding to the dead pixel of the mask layout.
Preferably, the providing an initial mask layout further includes: establishing a dead pixel library with dead pixels of the mask layout; correcting each mask domain dead pixel in the dead pixel library to obtain a correction point corresponding to the mask domain dead pixel, and storing the correction point corresponding to the mask domain dead pixel in a correction library; and combining the dead pixel library and the correction library into the matching library.
Preferably, the method for correcting each mask layout dead pixel in the dead pixel library is as follows: inputting each dead pixel of the mask layout into a preset simulation correction model; and the simulation correction model simulates and corrects the dead pixel of the mask pattern to obtain the correction point corresponding to the dead pixel of the mask pattern.
Preferably, the matching of the graphic point information in the initial mask layout and the dead pixel information in a preset dead pixel library includes: and carrying out pattern matching on the pattern points in the initial mask layout and at least part of the mask layout dead points in the dead point library.
Preferably, the pattern matching includes: and matching the graph point information in the initial mask plate with the dead pixel information in a preset dead pixel library according to a preset matching rule.
Preferably, the preset matching rule includes fuzzy matching and precise matching.
Preferably, the exact match comprises the steps of: positioning a target line segment in the graph point information, and calculating a check value of a target graph; searching a line segment to be matched in the matching library; according to the information of positioning rotation and mirror image of the line segment to be matched, taking the graph in a rectangular area formed by the line segment to be matched as a target graph to be matched, and reversely converting the graph into the form of the target graph; and calculating a check value according to the length of the line segment in the target to be matched, wherein if the check value is the same as that of the target graph, the matching is successful.
Preferably, the exact match comprises the steps of: positioning a target line segment in the graph point information, and calculating a check value of a target graph; searching a line segment to be matched in the matching library; according to the information of positioning rotation and mirror image of the line segment to be matched, taking the graph in a rectangular area formed by the line segment to be matched as a target graph to be matched, and reversely converting the graph into the form of the target graph; and calculating a check value according to the length of the line segment in the target to be matched, wherein if the check value is the same as that of the target graph, the matching is successful.
Preferably, part or all of the dead pixel information in the dead pixel library is selected to form the preset dead pixel library.
Preferably, if the matching is successful, the correction point information corresponding to the mask layout bad point is used for replacing the pattern point information in the initial mask layout for correction.
Preferably, the method further comprises the following steps after the correction: continuously matching the graph point information in the initial mask layout with the dead pixel information in the dead pixel library, and if the matching is successful, continuously correcting the initial mask layout; and if the matching fails, outputting the corrected mask layout.
Another technical solution of the present invention for solving the above technical problems is: a computer readable storage medium having computer program instructions thereon, the computer program instructions when executed by a processor implementing a method of mask layout correction as described above.
Another technical solution for solving the above technical problems of the present invention is: a graph repairing device comprises a device body and a device running program, wherein the device body implements the mask layout correction method when executing the device running program.
Compared with the prior art, the mask layout repairing method provided by the invention has the following beneficial effects:
1. the invention provides a mask layout correction method, which comprises the following steps: providing an initial mask layout, and acquiring graph point information in the initial mask layout by using the mask layout; matching the graph point information in the initial mask layout with dead pixel information in a preset mask layout matching library, wherein the matching library comprises mask layout dead pixel information and correction point information corresponding to the mask layout dead pixels; and if the dead pixel information is matched with the information of a certain figure point in the initial mask layout, correcting the initial mask layout by using the corrected point information corresponding to the dead pixel of the mask layout. And matching the initial mask layout with the dead pixel of the matching library, and performing better dead pixel detection on the initial mask layout through the dead pixel of the matching library. And the part successfully matched with the dead pixel of the matching library on the initial mask layout is directly replaced by the correction point corresponding to the dead pixel, so that the time required by repair is reduced. Aiming at the overall design graph, the simulation of key areas is carried out, the graph is matched with the dead pixel of the matching library, and then the correction point corresponding to the dead pixel is used for replacing and correcting the graph with correction, so that the time can be greatly saved, and meanwhile, only a small amount of operation is needed, and the resources are saved. The problem of correcting the design graph by using a small amount of resources is solved.
2. The invention provides a mask layout repairing method, which provides an initial mask layout and comprises the following steps: establishing a dead pixel library with dead pixels of the mask layout; correcting each mask domain dead pixel in the dead pixel library to obtain a correction point corresponding to the mask domain dead pixel, and storing the correction point corresponding to the mask domain dead pixel in the correction library; and combining the dead pixel library and the correction library into a matching library. And establishing a dead pixel library according to the required dead pixel or past experience, wherein the dead pixel library mainly comprises the dead pixel aiming at the initial mask layout, and the required dead pixel is adopted, so that redundant matching is not performed in the subsequent matching process, the time is reduced, and the resources are saved. The dead points are corrected by adopting simulation software to obtain correction points which correspond to the dead points one by one and establish a correction library, so that the dead points of the corrected mask layout can be directly replaced and corrected subsequently without performing simulation correction again, the time is saved, the operation is reduced, and the resources are saved. The established bad point library and the matching library formed by the correction library can ensure that the corresponding correction points of the bad points matched subsequently can be found in the matching library to be directly replaced and corrected, and the problem of correction errors can not occur, so that the time is saved, the operation is reduced, and the resources are saved.
3. The invention provides a mask layout repairing method, which corrects each mask layout dead pixel in a dead pixel library in the following modes: inputting the dead pixel of each mask pattern into a simulation correction model; and the simulation correction model simulates and corrects the bad points of the mask pattern to obtain correction points corresponding to the bad points of the mask pattern. And inputting the dead pixel of each mask pattern into a simulation repair model to simulate and correct the dead pixel of the mask pattern to obtain a corrected point. The dead pixel replacement method can only carry out simulation repair on the dead pixel of the mask layout, can facilitate direct dead pixel replacement in the later period, does not need redundant simulation operation, and saves resources.
4. The mask layout repairing method provided by the invention matches the graph point information in the initial mask layout with the dead pixel information in the preset dead pixel library, and comprises the following steps: and carrying out pattern matching on the initial mask layout points and at least part of mask layout dead points in the dead point library. The dead pixel in the required dead pixel library is selected for matching, the dead pixel in the required dead pixel library can be specifically selected for matching with the initial mask layout under the condition of confirming the type of the dead pixel of the initial mask layout to be solved, the calculation amount required by matching can be reduced, the time is reduced, and resources are saved.
5. The invention provides a mask layout repairing method, and the pattern matching comprises the following steps: and matching the graph point information in the initial mask plate with the dead pixel information in the preset dead pixel library according to a preset matching rule. The pattern matching is carried out by setting the matching rules, different matching rules can be set according to the conditions as required, and then the optimal matching effect is achieved, and meanwhile unnecessary operation can be reduced.
6. According to the mask layout repairing method provided by the invention, the preset matching rules comprise fuzzy matching and accurate matching. Different matching rules are selected according to different conditions, so that the required effect can be better achieved, and meanwhile, resources are not wasted. When the dead pixel of the initial mask layout needs to be accurately found out, accurate matching can be adopted to perform accurate graph matching so as to avoid errors. When a large amount of dead pixel detection is needed, fuzzy matching can be adopted for matching, and the time needed by matching is further reduced.
7. The mask layout repairing method provided by the invention selects part or all of the dead pixel information in the dead pixel library to form the preset dead pixel library. The dead pixel selection can be carried out on the dead pixel library according to the condition of the initial mask layout or the type of the dead pixel of the mask layout required to be repaired, so that the dead pixel in the required dead pixel library is selected to be matched with the mask layout to be repaired. Unnecessary operation can be better reduced, time is saved, and resources are saved.
8. According to the mask layout repairing method provided by the invention, if the matching is successful, the information of the correction point corresponding to the bad point of the mask layout is used for replacing the information of the initial mask layout for correcting. After the initial mask layout and the dead pixels in the dead pixel library are successfully matched, the corresponding positions of the dead pixels in the matched dead pixel library in the correction library are used for replacing the corresponding positions on the initial mask layout, so that the dead pixels can be directly corrected without singly performing simulation correction on the initial mask layout, the time for repairing the dead pixels on the initial mask layout is shortened, the process of re-simulation is reduced, and resources are saved.
9. The invention provides a mask layout repairing method, which further comprises the following steps after correction: continuously matching the graph point information in the initial mask layout with the dead pixel information in the dead pixel library, and if the matching is successful, continuously correcting the initial mask layout; and if the matching fails, outputting the corrected mask layout. And outputting the corrected mask layout after the initial graph dead pixel replacement correction is finished, and directly outputting the corrected mask layout without performing simulation operation on the initial mask layout to obtain the corrected mask layout. The time for repairing the mask layout is saved, and the use of resources is reduced.
10. The present invention provides a computer readable storage medium having computer program instructions thereon which, when executed by a processor, implement the above-described method. The computer-readable storage medium has the same beneficial effects as the mask layout correction method, and is not described herein again.
11. The graph repairing device provided by the invention comprises a device body and a device running program, and the mask layout correction method is realized when the device body executes the device running program. The graph repairing device has the same beneficial effects as the mask layout correcting method, and the description is omitted here.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a flowchart of a mask layout repairing method according to a first embodiment of the present invention.
Fig. 2 is a flowchart of step S0 of a mask layout repairing method according to a first embodiment of the present invention.
Fig. 3 is a flowchart of step S0b of a mask layout repairing method according to a first embodiment of the present invention.
Fig. 4 is a flowchart of step S1 of a mask layout repairing method according to a first embodiment of the present invention.
Fig. 5 is a flowchart of a mask layout repairing method in step S12 according to a first embodiment of the present invention.
Fig. 6 is a schematic diagram of a target graph of a mask layout repairing method according to a first embodiment of the present invention.
Fig. 7 is a schematic diagram of finding candidate positions in a mask layout repairing method according to a first embodiment of the present invention.
FIG. 8 is a diagram illustrating tolerance values of a mask layout repairing method according to a first embodiment of the present invention.
Fig. 9 is schematic diagrams of four cases when a target line segment 1 of the mask layout repair method provided in the first embodiment of the present invention is horizontal.
Fig. 10 is schematic diagrams of four cases when the target line segment 1 of the mask layout repair method provided in the first embodiment of the present invention is vertical.
Fig. 11 is a schematic diagram of a ignore box of a mask layout repairing method according to a first embodiment of the present invention.
FIG. 12 is a flowchart for providing global graph repair according to a second embodiment of the present invention.
Fig. 13 is a diagram of a circuit design of a block of 20um to 20um provided in the second embodiment of the present invention.
Fig. 14 is a bad dot pattern of a block 1um × 1um provided in the second embodiment of the present invention.
Fig. 15 is a modified graph of a block 1um × 1um provided in the second embodiment of the present invention.
Fig. 16 is a global graph provided by the second embodiment of the present invention.
Fig. 17 is a partial cut of a global graphic provided by the second embodiment of the present invention, wherein the global graphic has a broken dot pattern.
Fig. 18 is a modified global graph provided in the second embodiment of the present invention.
Fig. 19 is a partial cut of a corrected dot pattern in the corrected global pattern according to the second embodiment of the present invention.
Fig. 20 is a schematic diagram of a computer-readable storage medium according to a third embodiment of the present invention.
Fig. 21 is a schematic diagram of a graphic repair apparatus according to a fourth embodiment of the present invention.
The attached drawings indicate the following:
100. a computer-readable storage medium; 200. a graphic repair device;
110. computer program instructions; 210. an apparatus body; 220. the device runs the program.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and implementation examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. Referring to fig. 1, a first embodiment of the present invention provides a mask layout correction method, including the following steps: s1, providing an initial mask layout, wherein the initial mask layout comprises a plurality of graphic points, each graphic point has corresponding graphic point information, and the graphic point information in the initial mask layout is obtained; s2: matching the graph point information in the initial mask layout with dead pixel information in a preset mask layout matching library, wherein the matching library comprises mask layout dead pixel information and correction point information corresponding to the mask layout dead pixel information; s3: and if the dead pixel information is matched with the information of a certain figure point in the initial mask layout, correcting the initial mask layout by using the corrected point information corresponding to the dead pixel of the mask layout. It can be understood that, in the first embodiment of the present invention, the initial mask layout is matched with the dead pixel in the matching library, and the dead pixel detection can be better performed on the initial mask layout by using the dead pixel in the matching library.
Furthermore, in the first embodiment of the present invention, the part of the initial mask layout successfully matched with the dead pixel of the matching library is directly replaced with the correction point corresponding to the dead pixel, so that the time required for repair is reduced.
Furthermore, in the first embodiment of the present invention, aiming at the global design pattern, the simulation of the key area and the matching of the pattern with the dead pixel of the matching library are performed, and then the correction point corresponding to the dead pixel is used to replace and correct the pattern to be corrected, so that the time can be greatly saved, and at the same time, only a small amount of operation is required, thereby saving the resources. The design pattern can be corrected by using a small amount of resources.
Referring to fig. 2, a first embodiment of the present invention provides a mask layout correction method, which further includes, before step S1, step S0: s0a: establishing a dead pixel library with dead pixels of the mask layout; s0b: correcting bad points of each mask pattern in the bad point library to obtain correction points corresponding to the bad points of the mask patterns, and storing the correction points corresponding to the bad points of the mask patterns in a correction library; s0c: and combining the dead pixel library and the correction library into a matching library. It is to be understood that, in the first embodiment of the present invention, the bad point library and the correction library together constitute a bad point matching library. Specifically, in the first embodiment of the present invention, the dead pixel library may be established according to a required dead pixel or previous experience, and the dead pixel library mainly includes a dead pixel for the initial mask layout, and the required dead pixel library element is adopted, so that redundant matching is not performed in the subsequent matching process, time is reduced, and resources are saved. Specifically, in the first embodiment of the present invention, the dead pixels are corrected by using the simulation software to obtain the correction points corresponding to the dead pixels one to one, so that the dead pixels of the corrected mask layout can be directly replaced and corrected subsequently without performing simulation correction again, thereby saving time, reducing operation, and saving resources.
Furthermore, in the first embodiment of the present invention, the matching library formed by the established dead pixel library and the correction library can ensure that the corresponding correction point of the subsequently matched dead pixel can be found in the matching library to directly replace and correct the dead pixel, and the problem of correction error does not occur, so that time is saved, calculation is reduced, and resources are saved.
Referring to fig. 3, a first embodiment of the present invention provides a mask layout correction method, in step S0b, a method for correcting each mask layout dead pixel in a dead pixel library is as follows: s0b1: inputting the dead pixel of each mask pattern into a simulation correction model; s0b2: and the simulation correction model simulates and corrects the dead pixel of the mask pattern to obtain a correction point corresponding to the dead pixel of the mask pattern. It can be understood that, in the first embodiment of the present invention, each mask layout dead pixel is input into the simulation repair model to perform simulation and correction on the mask layout dead pixel, so as to obtain a correction point. Therefore, the dead pixel of the mask layout is simulated and repaired, the dead pixel replacement can be conveniently and directly carried out in the later period, redundant simulation operation is not needed, and resources are saved.
Referring to fig. 4, a first embodiment of the present invention provides a mask layout correction method, where step S1 includes: s11: inputting an initial mask layout; s12: and carrying out pattern matching on the pattern points in the initial mask pattern and at least part of mask pattern dead points in the dead point library. It can be understood that, in the first embodiment of the present invention, the dead pixel in the required dead pixel library is selected for matching, and the dead pixel in the required dead pixel library can be specifically selected to match with the initial mask layout under the condition that the type of the dead pixel of the initial mask layout to be solved is determined, so that the computation amount required for matching can be reduced, the time is reduced, and the resources are saved.
With reference to fig. 4, a first embodiment of the present invention provides a method for correcting a mask layout, and the method for pattern matching in step S12 includes: and matching the graph point information in the initial mask plate with the dead pixel information in the preset dead pixel library according to a preset matching rule. It can be understood that, in the first embodiment of the present invention, the matching rule is set for pattern matching, and different matching rules can be set according to the required situation, so as to achieve the optimal matching effect and reduce unnecessary operations.
Further, in the first embodiment of the present invention, the pattern point in the initial mask layout is matched with the dead pixel in the preset dead pixel library in a manner of matching according to the hash value of the pattern. Specifically, the hash value calculation is performed on the dead pixel in the dead pixel library, the hash value calculation is performed on the graph point in the initial mask layout, and the hash values of the same graph are equal, that is, if the graph point in the initial mask layout has the hash value same as that of the dead pixel, it is indicated that the graph point is matched with the dead pixel.
Referring to fig. 5, a first embodiment of the present invention provides a method for correcting a mask layout, in step S12, the method further includes the following steps: s12a: and setting a matching rule, wherein the matching rule comprises fuzzy matching and precise matching. It can be understood that, in the first embodiment of the present invention, the matching rule is set for pattern matching, and different matching rules can be set according to the required situation, so as to achieve the optimal matching effect and reduce unnecessary operations.
Specifically, in the first embodiment of the present invention, when the dead pixel of the initial mask layout needs to be accurately found, accurate matching may be adopted to perform accurate pattern matching so as to avoid errors. When a large amount of dead pixel detection is needed, fuzzy matching can be adopted for matching, and the time needed by matching is further reduced.
It should be understood that the precise matching is to use two line segments with the largest distance and perpendicular to each other as a target line segment, and determine whether the graph to be matched and the given graph feature value are completely consistent, where the graph in the rectangular region formed by the target line segment is the graph to be matched. Namely, the two sides of the precise matching are respectively the graph in the initial mask layout and the graph in the mask layout matching library. The precise matching comprises the following steps: positioning a target line segment in the graph point information as a line segment to be matched in the mask layout subsequently, and calculating a check value of the target graph; searching and searching a line segment combination with the same length and spatial relationship with the line segment to be matched in the mask layout; acquiring a graph in a rectangle formed by the line segment combination as a target to be matched; reversely converting the target to be matched into the form of a target graph according to the information of positioning rotation and mirror image of the line segment to be matched; and calculating a check value according to the target to be matched, and if the check value is the same as that of the target graph, successfully matching.
Illustratively, locating a target line segment in the target graph: and inputting information such as layout files, marking frames and the like, and recording the target graph as the selected area of the marking frame. As shown in fig. 6, the distances from all the edges in the mark box to the lower left corner and the lower right corner of the search box are respectively sorted, the edges with the midpoint closest to the vertexes of the two search boxes are respectively found, and the lengths of the two edges and the distances between the midpoints of the two edges on the X axis and the Y axis are used as matching bases.
Calculating a check value of the target graph: and moving the lower left corner of the target graph frame to coincide with the origin of coordinates, respectively calculating the hash values of the X coordinate and the Y coordinate of the first line segment of the target graph, gradually iterating until all the line segments calculate the hash values, and adding the width and the height of the mark frame to calculate the hash values, namely the final check value of the target graph. hash is a standard verification method that can convert a data into a string of unique long integers. For one line segment, the following calculation is carried out, the initial hash value is made to be 0, the hash value is recalculated after each value is added, the x coordinate and the y coordinate of two end points of the line segment are added in sequence, and the formula is as follows
Figure 822624DEST_PATH_IMAGE001
For a certain graph, all line segments are traversed by the above method to obtain a final hash value, namely the check value of the target graph.
Finding the position and conversion information of the candidate graph: when the length of a certain line segment is equal to that of the first target line segment, all the line segments in the mask layout matching library are traversed, the candidate graph is determined to possibly exist, all possible candidate frames are drawn, and as shown in fig. 7, the subsequent screening operation is carried out. And according to the direction relation of the two target line segments, the rotation and mirror image information of the candidate graph can be obtained. As illustrated in fig. 8 and 9, when the target line segment 1 is vertical and horizontal, 8 possible cases are selected, the marker box is selected, the candidate graph is reversely converted into the form of the target graph, and the check value calculation is prepared. Calculating a check value and matching: and calculating the hash values of all the candidate image frames by using the method, if the check value of the candidate image frame is equal to the check value of the target graph, successfully matching, and outputting the coordinate information of the candidate image frame. Fuzzy matching is based on exact matching, and fuzzy parts of matching patterns are removed before a check value is calculated so as to tolerate moderate changes of specific parts, and the fuzzy matching method comprises the following steps of: positioning a target line segment in the graph point information, removing a fuzzy part and calculating a target graph check value; searching a target line segment in a mask layout matching library to find a candidate graph; reversely converting the information into the form of a target graph according to the positioning rotation and mirror image information of the target line segment; and removing the fuzzy part, calculating a check value according to the length of the residual line segment, and if the check value is the same as the target graph, successfully matching. It should be understood that the fuzzy part can be divided into two types, one type is an ignore box, and all graphs in the ignore box are deleted when the check value is calculated; and the other type of time-tolerant line deletes the fuzzy information when calculating the check value and shortens the line segment connected with the tolerant line to the minimum value of the tolerant interval. And when the information of the fuzzy side section or the neglected frame is input, starting a fuzzy matching function. The ignore frame is to directly delete all the graphics in the candidate frame region for the target graphics, and for the candidate frame, as shown in fig. 10 (the dotted line frame represents the ignore frame), firstly obtain the rotation and mirror image information thereof by the above method, and delete all the graphics in the corresponding position region. The fuzzy edge is an input edge which can be extended or shortened, and meanwhile tolerance values are required to be input to set the applicable range of the fuzzy edge. The line segment connected to the blurred edge is made into a special target line segment, and the special target line segment is reduced to the lowest value of the tolerance value to calculate the verification value, as shown in fig. 11, the tolerance line does not participate in the calculation of the verification value.
Referring to fig. 5, the first embodiment of the present invention provides a mask layout correction method, which further includes the following steps after step S12a: s12b: and selecting part or all of the dead pixel information in the dead pixel library to form a preset dead pixel library. It can be understood that, in the first embodiment of the present invention, the dead pixel selection may be performed on the dead pixel library according to the condition of the initial mask layout or according to the type of the dead pixel of the mask layout to be repaired, so as to select the dead pixel in the required dead pixel library to perform matching with the mask layout to be repaired. Unnecessary operation can be better reduced, time is saved, and resources are saved. Specifically, step S12a and step S12b are both performed between step S11 and step S12, and the order of step S12a and step S12b is not required in the embodiment of the present invention.
A first embodiment of the present invention provides a mask layout correction method, where step S3 includes: s31: matching is successful; s32: and correcting by using correction point information corresponding to the bad point of the mask layout instead of the initial mask layout information. It can be understood that, in the first embodiment of the present invention, if the matching is successful, the correction point information corresponding to the bad point of the mask layout is used to replace the pattern point information in the initial mask layout for correction. Specifically, after the initial mask layout and the dead pixels in the dead pixel library are successfully matched, the corresponding positions of the dead pixels in the initial mask layout are replaced by the corresponding correction points of the dead pixels in the matched dead pixel library in the correction library, so that the dead pixels can be directly corrected without independently performing simulation correction on the initial mask layout, the time for repairing the dead pixels on the initial mask layout is shortened, the process of secondary simulation is reduced, and resources are saved.
The first embodiment of the present invention provides a mask layout correction method, which further includes the following steps after step S3: s4: and outputting the corrected mask layout. It can be understood that, in the first embodiment of the present invention, the corrected mask layout is output after the initial graph dead pixel replacement correction is completed, and the corrected mask layout can be obtained without performing simulation operation on the initial mask layout, that is, the corrected mask layout can be directly output. The time for repairing the mask layout is saved, and the use of resources is reduced.
Preferably, the outputting the corrected mask layout further includes the following steps: continuously matching the graph point information in the initial mask layout with the dead pixel information in the dead pixel library, and if the matching is successful, continuously correcting the initial mask layout; and if the matching fails, outputting the corrected mask layout.
To sum up, the first embodiment of the present invention provides a mask layout correction method, which includes first establishing a dead pixel library and a correction library and a dead pixel matching library in which dead pixels and correction points are in one-to-one correspondence, then inputting an initial mask layout, setting a matching rule and selecting a dead pixel to be matched, then replacing a dead pixel on the initial mask layout with a dead pixel successfully matched with the dead pixel by using a correction point corresponding to the dead pixel, and finally outputting the corrected initial mask layout.
With reference to fig. 12 to 19, a mask layout correction method according to a second embodiment of the present invention is provided. It is to be understood that the second embodiment of the present invention employs a circuit design pattern of 20um × 20um as the global design pattern and a dead pixel library including a dead pixel pattern of 1um × 1um, and a correction library including a correction pattern of 1um × 1um, matches the dead pixel pattern in the dead pixel library in the global design pattern, and replaces it with the correction pattern in the correction library. Specifically, in the second embodiment of the present invention, the specific process is as follows: s201: inputting a global design graph; s202: carrying out pattern matching; s203: carrying out graph replacement and correction; s204: outputting the corrected global graph; it can be understood that, the second embodiment of the present invention adopts the method for correcting the mask layout described in the first embodiment, which has the same beneficial effects as the first embodiment, and is not described herein again.
Referring to fig. 16 and 17, in the second embodiment of the present invention, a matching rule is set for matching, that is, hash value calculation is performed on the global design pattern and the dead dot pattern, and the matching of the hash values of the global design pattern and the dead dot pattern is successful. It is to be understood that fig. 16 is a global graph, and fig. 17 is a partial cut of a graph having a broken dot in the global graph.
Referring to fig. 18 and fig. 19, in the second embodiment of the present invention, for the bad point after successful matching, the bad point in the global graph is modified and replaced by the modification point in the modification base corresponding to the bad point in the bad point base, so as to obtain the modified global graph. It is to be understood that fig. 18 is a modified global graph, and fig. 19 is a partial cut of the modified global graph with a modified dot graph.
Referring to fig. 20, a computer-readable storage medium 100 is provided according to a third embodiment of the present invention, and has computer program instructions 110, where the computer program instructions 110 are executed by a processor to implement the above-mentioned method for correcting a reticle layout. It is understood that the computer-readable storage medium 100 in the third embodiment of the present invention stores computer program instructions 110, and the computer program instructions 110 can be called by the processor to execute a method for correcting a mask layout as described in the first embodiment. The computer-readable storage medium 100 has the same beneficial effects as the mask layout correction method described above, which are not described herein again.
In particular, the computer-readable storage medium 100 may be an electronic memory such as a flash memory, an EEPROM (electrically erasable programmable read only memory), an EPROM, a hard disk, or a ROM. Optionally, the computer-readable storage medium 100 includes a non-volatile computer-readable medium. In particular, the computer-readable storage medium 100 has storage space for computer program instructions 110 for performing any of the method steps of the above-described method. The program instructions may be read from or written to one or more computer program products. Alternatively, the computer program instructions 110 may be compressed in a suitable form.
Referring to fig. 21, a fourth embodiment of the present invention provides a graphic repair apparatus 200, which includes an apparatus body 210 and an apparatus running program 220, where the apparatus body 210 implements the mask layout correction method when executing the apparatus running program 220. It is understood that, when the graphic repair apparatus 200 in the fourth embodiment of the present invention is running, the apparatus body 210 executes the apparatus running program 220 to implement the method described in the first embodiment. The same beneficial effects of the pattern repair apparatus 200 with the above-mentioned mask layout correction method are not described herein again.
In the embodiments provided herein, it should be understood that "B corresponding to a" means that B is associated with a from which B can be determined. It should also be understood, however, that determining B from a does not mean determining B from a alone, but may also be determined from a and/or other information.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. Those skilled in the art should also appreciate that the embodiments described in this specification are exemplary and alternative embodiments, and that the acts and modules illustrated are not required in order to practice the invention.
The flowchart and block diagrams in the figures of the present application illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will be understood that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
The mask layout correction method disclosed by the embodiment of the invention is described in detail, the principle and the implementation mode of the invention are explained by applying specific embodiments, and the description of the embodiment is only used for helping to understand the method and the core idea of the invention; meanwhile, for the persons skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present description should not be construed as a limitation to the present invention, and any modification, equivalent replacement, and improvement made within the principle of the present invention should be included in the protection scope of the present invention.

Claims (13)

1. A mask layout correction method is characterized in that: the method comprises the following steps:
providing an initial mask layout, and acquiring graph point information in the initial mask layout;
matching the graph point information in the initial mask layout with dead pixel information in a preset mask layout matching library, wherein the mask layout matching library comprises mask layout dead pixel information and correction point information corresponding to the mask layout dead pixel information;
and if the dead pixel information is matched with the information of a certain figure point in the initial mask layout, correcting the initial mask layout by using the correction point information corresponding to the dead pixel of the mask layout.
2. The mask layout correction method according to claim 1, characterized in that: the providing of the initial mask layout further comprises:
establishing a dead pixel library with dead pixels of the mask layout;
correcting each mask domain dead pixel in the dead pixel library to obtain a corrected point corresponding to the mask domain dead pixel, and storing the corrected point corresponding to the mask domain dead pixel in a correction library;
and combining the bad pixel library and the correction library into the matching library.
3. The mask layout correction method according to claim 2, characterized in that: the mode of correcting each mask layout dead pixel in the dead pixel library is as follows:
inputting each dead pixel of the mask layout into a preset simulation correction model;
and the simulation correction model simulates and corrects the dead pixel of the mask pattern to obtain the correction point corresponding to the dead pixel of the mask pattern.
4. The mask layout correction method according to claim 3, characterized in that: the step of matching the graphic point information in the initial mask plate with the dead pixel information in a preset dead pixel library comprises the following steps: and carrying out pattern matching on the pattern points in the initial mask layout and at least part of the mask layout dead points in the dead point library.
5. The mask layout correction method according to claim 4, characterized in that: the pattern matching includes: and matching the graph point information in the initial mask plate with the dead pixel information in a preset dead pixel library according to a preset matching rule.
6. The mask layout correction method according to claim 5, characterized in that: the preset matching rules comprise fuzzy matching and precise matching.
7. The mask layout correction method according to claim 6, characterized in that: the exact match includes the steps of: positioning a target line segment in the graph point information, and calculating a check value of a target graph; searching a line segment to be matched in the matching library; according to the information of positioning rotation and mirror image of the line segment to be matched, taking the graph in a rectangular area formed by the line segment to be matched as a target graph to be matched, and reversely converting the graph into the form of the target graph; and calculating a check value according to the length of the line segment in the target to be matched, wherein if the check value is the same as that of the target graph, the matching is successful.
8. The mask layout correction method according to claim 6, characterized in that: the fuzzy matching comprises the following steps: positioning a target line segment in the graph point information, removing a fuzzy part and calculating a target graph check value; searching a target line segment in the matching library to find a candidate graph; reversely converting the positioning rotation and mirror image information of the target line segment into the form of a target graph; and removing the fuzzy part, calculating a check value according to the length of the residual line segment, and if the check value is the same as the target graph, successfully matching.
9. The mask layout correction method according to claim 6, characterized in that: and selecting part or all of the dead pixel information in the dead pixel library to form the preset dead pixel library.
10. The mask layout correction method according to claim 9, characterized in that: and if the matching is successful, replacing the graph point information in the initial mask plate with the correction point information corresponding to the bad point of the mask plate for correction.
11. The mask layout correction method according to claim 1, characterized in that: the method further comprises the following steps after the correction:
continuously matching the graph point information in the initial mask layout with the dead pixel information in the dead pixel library, and if the matching is successful, continuously correcting the initial mask layout;
and if the matching fails, outputting the corrected mask layout.
12. A computer-readable storage medium having computer program instructions stored thereon, characterized in that: the computer program instructions, when executed by a processor, implement the method of any one of claims 1-11.
13. A graphic repair device characterized by: the method comprises an equipment body and an equipment running program, wherein the equipment body executes the equipment running program to realize the method according to any one of claims 1-11.
CN202211289154.8A 2022-01-14 2022-10-20 Mask layout correction method Pending CN115906751A (en)

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CN114063384A (en) * 2022-01-14 2022-02-18 深圳晶源信息技术有限公司 Mask pattern correction method
CN115879410B (en) * 2022-12-16 2024-05-17 华芯巨数(杭州)微电子有限公司 Mask layout violation automatic repair method, database training method, system and computer equipment
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Family Cites Families (13)

* Cited by examiner, † Cited by third party
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TW569295B (en) * 2001-09-29 2004-01-01 Toshiba Corp Producing method for mask pattern and manufacturing method for semiconductor device
JP3615182B2 (en) * 2001-11-26 2005-01-26 株式会社東芝 Optical proximity effect correction method and optical proximity effect correction system
CN100445875C (en) * 2007-01-26 2008-12-24 浙江大学 Method for correcting layering optical proximity effect
US9122160B2 (en) * 2013-03-15 2015-09-01 Globalfoundries Singapore Pte. Ltd. Method and apparatus for performing optical proximity and photomask correction
US9330225B2 (en) * 2014-06-05 2016-05-03 International Business Machines Corporation Photomask error correction
CN106338883B (en) * 2015-07-16 2020-05-08 中芯国际集成电路制造(上海)有限公司 Optical proximity correction method
CN105223772B (en) * 2015-10-29 2019-12-03 上海华力微电子有限公司 A kind of optical proximity correction method based on shape library optimization aim figure
US10656517B2 (en) * 2016-01-20 2020-05-19 Mentor Graphics Corporation Pattern correction in multiple patterning steps
CN107797375B (en) * 2016-08-31 2020-11-03 中芯国际集成电路制造(上海)有限公司 Method for correcting target pattern
KR102415583B1 (en) * 2017-06-30 2022-07-04 삼성전자주식회사 Method for optimizing OPC model and method for manufacturing semiconductor device using the same
CN108829948A (en) * 2018-05-30 2018-11-16 中国科学院微电子研究所 The method for building up in bad point library and establish system
CN111474819B (en) * 2020-04-26 2023-08-15 上海华力集成电路制造有限公司 Optical proximity correction method for optimizing MEEF
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