JP5477132B2 - Mask pattern manufacturing apparatus, mask pattern manufacturing method, and mask manufacturing method - Google Patents

Description

  The present invention relates to a mask pattern manufacturing apparatus that performs optical proximity correction (OPC), a manufacturing method, and a method of manufacturing a mask that has been subjected to optical proximity correction.

  A rule-based OPC technique is widely used when optical proximity effect correction is performed on an exposure mask or reticle pattern. In the rule-based OPC method, correction is performed for each line segment constituting the outline of the pattern to be corrected based on the line width of the pattern and the distance to the edge of the pattern facing the line segment. The correction amount is prepared in advance as a correction table.

  As the pattern integration degree increases, the number of line segments subject to rule-based OPC increases explosively, and the correction processing time increases. In order to prevent an increase in processing time, a template pattern and a correction pattern to which a rule-based OPC technique is applied are prepared in advance. When the correction target pattern matches the template pattern, the correction pattern of the template pattern can be directly adopted as the correction pattern of the correction target pattern. For this reason, it is not necessary to apply the rule-based OPC method for each line segment constituting the outline of the correction target pattern.

JP 2008-310353 A JP 2010-26420 A

  If a template pattern that matches the correction target pattern is not prepared, the conventional rule-based OPC method must be applied to the correction target pattern.

According to one aspect of the invention,
A template storage area in which a template pattern including a plurality of element patterns and a correction pattern of the template pattern are stored;
A rule-based optical proximity effect correction table storing a correction amount when performing pattern correction by the rule-based optical proximity effect correction method;
A correction target pattern storage area in which a correction target pattern including a plurality of element patterns is stored;
A processing device,
The processor is
The template pattern stored in the template storage area is compared with the correction target pattern stored in the correction target pattern storage area, and a portion where both match is extracted as a matching portion. , Extracted as a mismatch,
Of the correction target pattern, the part affected by the correction amount when applying the rule-based optical proximity effect correction method due to the mismatched part is extracted as a correction required part,
Performing the first correction based on the correction pattern stored in the template storage area for the portions other than the correction required portion of the matching portion of the correction target pattern,
There is provided a mask pattern manufacturing apparatus that performs second correction on the correction required portion and the mismatched portion of the correction target pattern based on the rule-based optical proximity effect correction table.

According to another aspect of the invention,
Comparing the template pattern and the correction target pattern, extracting a matching part as a matching part, and extracting a non-matching part as a mismatching part;
Extracting a portion of the correction target pattern that is affected by the correction amount based on the rule-based optical proximity effect correction due to the mismatched portion as a correction required portion;
Performing a first correction based on a correction pattern prepared corresponding to the template pattern for a portion other than the portion to be corrected among the matching portions of the correction target pattern;
Performing the second correction by applying the rule-based optical proximity effect correction method to the correction required portion and the mismatched portion of the correction target pattern;
A mask pattern manufacturing method is provided.

  According to still another aspect of the present invention, there is provided a mask manufacturing method using the mask pattern manufacturing method.

  When the correction target pattern and the template pattern partially match, a part of the correction pattern prepared for the template pattern can be applied. As a result, the amount of calculation based on the rule-based optical proximity effect correction method can be reduced.

It is a block diagram of the mask pattern production apparatus by an Example. It is a top view which shows an example of a template pattern. It is a top view which shows an example of a correction target pattern. It is a flowchart of the mask pattern preparation method by an Example. It is a figure of the correction object pattern for demonstrating the method to extract a mismatching part. It is a figure of the correction object pattern for demonstrating the method of extracting a correction required part. It is a figure of the correction object pattern for demonstrating the method to extract a front part. It is a figure which shows the correction pattern of parts other than a correction required part and a front part among matching parts. It is a figure which shows the correction pattern of a mismatching part and a correction required part. It is a figure which shows the correction pattern of the front part. It is a figure which shows the synthetic | combination correction pattern. It is a figure which shows the mismatching part of the model element pattern for demonstrating the method by a modification, a correction target element pattern, and a correction target element pattern. It is the schematic of exposure apparatus.

  FIG. 1 is a block diagram of a mask pattern manufacturing apparatus according to an embodiment. The mask pattern manufacturing apparatus according to the embodiment includes a processing device 10, a storage device 11, an input device 12, and an output device 13. In the storage device 11, a template storage area 15, a rule base OPC table 16, a correction target pattern storage area 17, a correction pattern storage area 18, and a program area 19 are secured. The program area 19 stores a computer program executed by the processing device 10.

  The template storage area 15 stores pattern data of a plurality of template patterns and correction pattern pattern data obtained by applying the rule-based OPC method to each of the template patterns. The rule base OPC table stores information necessary for applying the rule base OPC method. As an example, when the pattern dimension (pattern width) in the direction orthogonal to the line segment constituting the outline of the pattern and the distance to the edge of the adjacent pattern facing the line segment are determined, the rule base OPC table is By referencing, the correction amount of the line segment (specifically, the movement amount of the line segment) can be obtained.

  Pattern data of a correction target pattern is input from the input device 12. This pattern data is stored in the correction target pattern storage area 17. The pattern data of the correction pattern generated by the processing device 10 is output from the output device 13.

  FIG. 2 shows an example of a template pattern stored in the template storage area 15 (FIG. 1). The template storage area 15 stores a plurality of such template patterns. Each of the template patterns 20 includes a plurality of isolated element patterns 21. As an example, the template pattern 20 shown in FIG. 2 includes eight element patterns 21. The template pattern 20 is obtained, for example, by extracting a part from a design pattern of a large-scale semiconductor integrated circuit (LSI).

  A line segment constituting the outer shape of each element pattern 21 extends in the horizontal direction (X direction) or the vertical direction (Y direction). One element pattern 21A is noted in the description of the pattern correction method according to the embodiment. The shape of the element pattern 21A is an L shape (saddle shape) having six vertices. The six vertices are numbered in order from A1 to A6 counterclockwise.

  FIG. 3 shows an example of the correction target pattern 30 stored in the correction target pattern storage area 17 (FIG. 1). Similar to the template pattern, the correction target pattern 30 includes a plurality of isolated element patterns 31. One element pattern 31A is noted in the description of the pattern correction method according to the embodiment. The shape of the element pattern 31A is an F shape having ten vertices. The ten vertices are numbered in order from B1 to B10 counterclockwise.

  FIG. 4 is a flowchart of a mask pattern manufacturing method according to the embodiment. The flowchart shown in FIG. 4 is executed by the processing apparatus 10 based on the computer program stored in the program area 19 of FIG.

  In step S1, pattern matching between the correction target pattern 30 (FIG. 3) stored in the correction target pattern storage area 17 (FIG. 1) and a plurality of template patterns stored in the template storage area 15 (FIG. 1). I do. In step S2, it is determined whether a matching template pattern is detected. If a matched template pattern is detected, steps S11, S12, and S13 are executed. These steps will be described later. If no matching template pattern is detected, a template pattern with the highest matching rate is extracted in step S3. As an example, a template pattern 20 (FIG. 2) is extracted.

  Various parameters can be used as the matching rate. For example, among the vertices of the element pattern 31 included in the correction target pattern 30, the number of vertices that match the vertex of the element pattern included in the template pattern can be employed as the matching rate. Alternatively, the length of the portion that matches the line segment that forms the outer shape of the element pattern included in the template pattern among the line segments that form the outer shape of the element pattern 31 included in the correction target pattern 30 is used as the matching rate. May be.

  In step S4, a portion that matches the template pattern 20 and a portion that does not match are extracted from the correction target pattern 30. The matched part is called a “matched part”, and the unmatched part is called a “mismatched part”. When the matching rate is calculated, if the matching part and the mismatching part have already been extracted, it is not necessary to repeat the same procedure in step S4.

  With reference to FIG. 5, a method for extracting the matching portion 32 and the mismatching portion 33 of the correction target pattern 30 will be described. The coordinates of the vertices A1, A2, A3, A4, A5, A6 of the element pattern 21A (hereinafter referred to as “model element pattern”) included in the template pattern 20 (FIG. 2) are included in the correction target pattern 30, respectively. This coincides with the coordinates of the vertices B1, B2, B3, B8, B9, and B10 of the pattern 31A (hereinafter referred to as “correction target element pattern”). The vertices B4, B5, B6, and B7 of the element pattern 31A do not match.

  Among the vertices that match the correction target element pattern 31A and the template element pattern 21A, vertices that are adjacent to each other in both the template element pattern 21A and the correction target element pattern 31A are extracted. In the example shown in FIG. 5, the vertices A1 and A2, A2 and A3, A4 and A5, A5 and A6, A6 and A1 of the template element pattern 21A are extracted, and the vertices B1, B2, and B2 of the correction target element pattern 31A are extracted. B3, B8 and B9, B9 and B10, and B10 and B1 are extracted. Line segments B1B2, B2B3, B8B9, B9B10, and B10B1 having these vertices as both ends of the correction target element pattern 31A are extracted as matching portions 32.

  Among the vertices that match the correction target element pattern 31A and the template element pattern 21A, vertices that are adjacent to each other in the template element pattern 21A but not adjacent to each other in the correction target element pattern 31A are extracted. In the example shown in FIG. 5, the vertices A3 and A4 of the template element pattern 21A and the vertices B3 and B8 of the correction target element pattern 31A are extracted. Vertices included between the vertices B3 and B8 of the correction target element pattern 31A are extracted. In the example shown in FIG. 5, vertices B4 to B7 are extracted.

  From the vertices B4 to B7, the vertex B3 or B8 and the one having the same X coordinate or Y coordinate are extracted. In the example shown in FIG. 5, the X coordinates of the vertices B4 and B7 coincide with the X coordinates of the vertices B3 and B8.

  From the vertices B3 and B8 extracted first and the vertices B4 and B7 extracted next, vertices adjacent to each other are extracted. In the example shown in FIG. 5, vertices B3 and B4 are adjacent to each other, and vertices B7 and B8 are adjacent to each other. A line segment B3B4 and a line segment B7B8 having vertices adjacent to each other as both ends are extracted as the matching portion 32. Of the line segments constituting the outline of the correction target element pattern 31A, line segments B4B5, B5B6, B6B7 other than the matching part 32 are extracted as the non-matching part 33. In FIG. 5, the coincidence portion 32 is indicated by a solid line, and the inconsistency portion 33 is indicated by a broken line.

  The same process is performed for the other element patterns 31 included in the correction target pattern 30. In FIG. 5, the correction target element pattern 30 other than the correction target element pattern 31 </ b> A matches the corresponding element pattern 21 of the template pattern 20.

  In step S5 (FIG. 4), a portion affected by the mismatch portion 33 is extracted from the match portion 32.

  This extraction method will be described with reference to FIG. The line segment B4B5 included in the mismatched portion 33 is translated in two directions (downward and upward in FIG. 6) orthogonal to the line segment. Among the line segments constituting the outline of the correction target element pattern 31, the line segment that first intersects with the locus of the line segment B4B5 is detected. The detected line segment is extracted as a correction required portion 34. In FIG. 6, a line segment C7C8 that first intersects with the locus formed when the line segment B4B5 is translated downward is detected. The line segment that first intersects the locus formed when the line segment B4B5 is translated upward is the line segment B6B7 of the non-matching portion 33. When a line segment of the non-matching portion 33 is detected, it is not necessary to extract it as the correction required portion 34.

  Similarly, the line segment C1C2 and the line segment C3C4 are detected from the locus formed when the line segment B5B6 is translated. Since the line segments C1C2 and C3C4 are not included in the non-matching portion 33, they are extracted as the correction required portion 34. The line segment C5C6 is extracted as the correction required portion 34 from the locus formed when the line segment B6B7 is translated.

  Hereinafter, the reason for extracting the portion 34 requiring correction will be described. When pattern correction is performed using the rule-based OPC method, the correction amount is the distance (pattern width) from the correction target line segment to the edge opposite to the correction target line segment, and the correction target line segment. It is determined by the distance to the next pattern.

  For example, attention is paid to the line segment B7B8 shown in FIG. The distance from the line segment B7B8 included in the matching portion 32 to the line segment B1B2 opposite to the line segment B7B8, and the element pattern 31 facing the line segment B7B8 (the element on the right side of the element pattern 31A in FIG. 6) The distance to the pattern) is equal to the size of the corresponding portion of the template pattern 20 (FIG. 2). For this reason, the correction amount of the corresponding line segment of the template pattern 20 can be applied as it is as the correction amount of the line segment B7B8.

  Next, attention is paid to the line segment C1C2 shown in FIG. The line segment B5B6 on the opposite side to the line segment C1C2 is included in the mismatched portion 33. The distance from the line segment C1C2 to the line segment B5B6 is different from the distance from the portion corresponding to the line segment C1C2 of the template element pattern 21A (FIG. 2) to the opposite line segment A3A4. For this reason, the line segment C1C2 itself matches the corresponding line segment of the template pattern 20, but the correction amount of the template pattern 20 cannot be applied as it is. In this way, a line segment to which the correction amount of the template pattern 20 cannot be applied as it is is extracted as the correction required portion 34.

  In step S6 (FIG. 4), a line segment that is closed to the correction target pattern 30 and cannot be applied with the rule-based OPC technique is extracted from the correction target pattern 30 as a front line portion.

  With reference to FIG. 7, the detection method of the line segment which should be extracted as a front part is demonstrated. In the rule-based OPC method, the correction amount of the correction target line segment depends on the distance from the line segment to the pattern facing the line segment. For this reason, among the line segments in the correction target pattern 30, for the line segments that do not face the element pattern 31 in the correction target pattern 30, the distance to the pattern that faces the line segment cannot be specified. . That is, the rule-based OPC method cannot be applied to such a line segment by closing the correction target pattern 30. Such a line segment is extracted as the front line portion 35.

  Specifically, when the correction target pattern 30 is irradiated with the parallel light beam from the positive direction of the X axis, the negative direction, the positive direction of the Y axis, and the negative direction, the irradiated part is a front part. 35 is extracted. In FIG. 7, the front portion 35 is indicated by a thin dotted line.

  In step S7 (FIG. 4), for the line segments other than the correction required portion 34 and the front portion 35 in the matching portion 32, based on the correction pattern of the template pattern stored in the template storage area 15 (FIG. 1), Perform pattern correction.

  FIG. 8 shows an example of a correction pattern 40 obtained by correcting line segments other than the correction required portion 34 and the front line portion 35 in the matching portion 32. The correction pattern 40 is obtained by applying the correction pattern stored in the template storage area 15 (FIG. 1) as it is. Therefore, when calculating the correction amount of each correction target line segment, there is no need to perform an operation based on the rule-based OPC method. At this stage, no correction pattern has been determined for the inconsistent portion 33, the correction required portion 34, and the front portion 35.

  In step S8 (FIG. 4), the pattern correction is performed by applying the rule-based OPC method to the inconsistent portion 33 and the correction required portion 34.

  FIG. 9 shows an example of the correction pattern 41 of the mismatched portion 33 and the correction required portion 34. For the mismatched portion 33 and the correction required portion 34, the correction pattern prepared for the template pattern cannot be applied as it is. Therefore, the correction pattern 41 of the inconsistent portion 33 and the correction required portion 34 is obtained by performing an operation based on the rules stored in the rule base OPC table 16 (FIG. 1). This calculation can be performed by closing the correction target pattern 30 shown in FIG.

  In step S9 (FIG. 4), pattern correction is performed on the front portion by applying the rule-based OPC method.

  FIG. 10 shows an example of the correction pattern 42 of the front portion 35. The rule-based OPC method cannot be applied to the front line portion 35 by closing the correction target pattern 30. Therefore, the correction pattern 42 is obtained by applying the rule-based OPC technique including the surrounding patterns that affect the correction target pattern 30 shown in FIG.

  In step S10 (FIG. 4), the final correction pattern is generated by synthesizing the correction patterns obtained in steps S7 to S9.

  FIG. 11 shows an example of the combined correction pattern 37. Hereinafter, an example of the synthesis method will be described. In the positions corresponding to the points C1 and C2 shown in FIG. 10, the corrected line segments obtained for one line segment B1B2 of the correction target pattern 30 are discontinuous. In this case, what is necessary is just to add the line segment which connects the discontinuous part of the line segment after correction. The added line segment is orthogonal to the line segment B1B2. The corrected line segments intersect at the position corresponding to the convex vertex B7 toward the inside of the element pattern shown in FIG. In this case, a line segment inside the intersecting position may be deleted. Two corrected line segments are discontinuous at the position corresponding to the convex vertex D toward the outside of the correction target pattern 30 shown in FIG. In this case, the two corrected line segments may be extended until they come into contact with each other.

  If a matched line segment is detected in step S2 of FIG. 4, in step S11, a front portion that is closed to the correction target pattern 30 and cannot be applied with the rule-based OPC technique is extracted. This process is the same as step S6.

  Next, in step S12, a correction pattern is generated for a portion other than the front portion based on the template correction pattern. This correction method is the same as the method in step S7. In step S13, a correction pattern is generated by applying the rule-based OPC method to the front portion. The correction pattern generation method is the same as the method of step S9. Thereafter, in step S10, a correction pattern is synthesized.

  In the above embodiment, even if a template pattern that completely matches the correction target pattern 30 (FIG. 5) is not detected, the template correction pattern can be applied as it is to a part of the correction target pattern 30. For this reason, the amount of calculation using the rule-based OPC method can be reduced. Compared with a method in which the rule-based OPC method is applied to all portions of the correction target pattern 30, it is possible to generate a correction pattern more efficiently.

  Next, a modification of step S4 (FIG. 4) of the above embodiment will be described with reference to FIGS. 12A to 12C.

  12A and 12B, the template element pattern 21A of the template pattern 20 (FIG. 2) and one correction target element pattern 31A of the correction target pattern 30 (FIG. 3) are shown again. By the same method as that shown in FIG. 5 of the first embodiment, the vertices A3 and A4 of the template element pattern 21A are extracted as non-matching vertices, and the vertices B3 to B8 are extracted from the correction target element pattern 31A. In the above embodiment, the vertices that did not match were analyzed in more detail, and line segments B3B4 and B7B8 were extracted as matching parts. In the modified example, all line segments having the mismatched vertices at both ends are extracted as mismatched parts without performing detailed analysis. In the example shown in FIG. 12C, line segments B3B4, B4B5, B5B6, B6B7, and B7B8 are extracted as the mismatched portion 23.

  In the modified example, the line segment extracted as the inconsistent portion 33 is longer than that in the above embodiment. For this reason, the amount of calculation when applying the rule-based OPC method in step S8 increases. However, since the detailed analysis is not performed in step S4 for extracting the inconsistent portion, the calculation amount in step S4 is reduced.

  The correction pattern generated by the method according to the above embodiment and its modification is stored in the correction pattern storage area 18 (FIG. 1) as pattern data. The processing device 10 outputs the pattern data of the correction pattern from the output device 13.

  An exposure mask can be prepared based on the pattern data of the correction pattern. Note that a correction based on a simulation-based method may be further performed on a part of the correction pattern.

  FIG. 13 shows a schematic view of an exposure apparatus using a mask. For example, an ArF excimer laser is used as the light source 51. The laser beam emitted from the light source 51 enters the mask 54 via the fly-eye lens 52 and the aperture stop 53. A mask pattern 55 is formed on the mask 54 based on the correction pattern generated by the method according to the above embodiment. The mask pattern 55 is projected onto the surface of the semiconductor wafer 57 by the projection lens 56.

  Although the correction target pattern 30 (FIG. 3) includes eight element patterns 31 in the above embodiment, the number of element patterns 31 included in the correction target pattern 30 is not limited to eight. Nine or more element patterns may be included, or seven or less. However, when the number of element patterns 31 is small, the ratio occupied by the front line portion 35 shown in FIG. 7 is high, so that the effect of matching with the template pattern is reduced. If the number of element patterns 31 is too large, the probability that the template pattern and the correction target pattern match will be low. The number of element patterns 31 is preferably optimized based on the pattern arrangement of the semiconductor integrated circuit to be manufactured.

  Although the present invention has been described with reference to the embodiments, the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications, improvements, combinations, and the like can be made.

  In addition to the above examples, the following additional notes are disclosed.

(Appendix 1)
A template storage area in which a template pattern including a plurality of element patterns and a correction pattern of the template pattern are stored;
A rule-based optical proximity effect correction table storing a correction amount when performing pattern correction by the rule-based optical proximity effect correction method;
A correction target pattern storage area in which a correction target pattern including a plurality of element patterns is stored;
A processing device,
The processor is
The template pattern stored in the template storage area is compared with the correction target pattern stored in the correction target pattern storage area, and a matching part of both patterns is extracted as a matching part. The unmatched part is extracted as a non-matching part,
Of the correction target pattern, due to the mismatched portion, extract the portion that is affected by the correction amount when applying the rule-based optical proximity correction neck method as a correction required portion,
Performing the first correction based on the correction pattern stored in the template storage area for the portions other than the correction required portion of the matching portion of the correction target pattern,
The mask pattern production apparatus which performs 2nd correction | amendment based on the said rule base optical proximity effect correction table with respect to the said correction required part and the said mismatch part of the said correction | amendment object pattern.

(Appendix 2)
The processor is
Supplementary Note 1 When performing the first correction, correction is performed on a portion other than the front portion, which is a portion that is closed to the correction target pattern and to which the rule-based optical proximity correction method cannot be applied, among the matching portions. The mask pattern production apparatus described in 1.

(Appendix 3)
The processor is
When a line segment connecting adjacent vertices of each element pattern of the template pattern completely matches a line segment connecting adjacent vertices of the element pattern of the correction target pattern, the matched line segment is The mask pattern manufacturing apparatus according to appendix 1 or 2, which is extracted as a matching portion.

(Appendix 4)
The processor is
When the line segment connecting the adjacent vertices of the element pattern of the template pattern partially matches the line segment connecting the adjacent vertices of the element pattern of the correction target pattern, 4. The mask pattern manufacturing apparatus according to claim 1, wherein a matching part is extracted as the matching part, and a part that does not match among the element patterns of the correction target pattern is extracted as the mismatching part.

(Appendix 5)
The processor is
The mask pattern manufacturing apparatus according to any one of supplementary notes 1 to 4, wherein a correction pattern of the correction target pattern is generated and output based on a result of the first correction and the second correction.

(Appendix 6)
Comparing the template pattern and the correction target pattern, extracting a matching part as a matching part, and extracting a non-matching part as a mismatching part;
Extracting a portion of the correction target pattern that is affected by the correction amount based on the rule-based optical proximity effect correction due to the mismatched portion as a correction required portion;
Performing a first correction based on a correction pattern prepared corresponding to the template pattern for a portion other than the portion to be corrected among the matching portions of the correction target pattern;
Performing the second correction by applying the rule-based optical proximity effect correction method to the correction required portion and the mismatched portion of the correction target pattern;
A mask pattern manufacturing method comprising:

(Appendix 7)
Comparing the template pattern and the correction target pattern, extracting a matching part as a matching part, and extracting a non-matching part as a mismatching part;
Extracting a portion of the correction target pattern that is affected by the correction amount based on the rule-based optical proximity effect correction due to the mismatched portion as a correction required portion;
Performing a first correction based on a correction pattern prepared corresponding to the template pattern for a portion other than the portion to be corrected among the matching portions of the correction target pattern;
Performing a second correction using the rule-based optical proximity correction method on the correction required portion and the mismatched portion of the correction target pattern;
Correcting the correction target pattern based on the results of the first correction and the second correction, and generating a correction pattern;
And a step of producing a mask based on the correction pattern.

DESCRIPTION OF SYMBOLS 10 Processing apparatus 11 Storage apparatus 12 Input apparatus 13 Output apparatus 15 Template storage area 16 Rule base OPC correction table 17 Correction target pattern storage area 18 Correction pattern storage area 19 Program area 20 Template pattern 21, 21A Template pattern element pattern 30 Correction target Pattern 31, 31A Element pattern 32 of correction target pattern Matching portion 33 Unmatching portion 34 Front portion 40, 41, 42 Correction pattern 51 Light source 52 Fly eye lens 53 Aperture stop 54 Mask 55 Mask pattern 56 Projection lens 57 Semiconductor wafer

Claims (5)

A template storage area in which a template pattern including a plurality of element patterns and a correction pattern of the template pattern are stored;
A rule-based optical proximity effect correction table storing a correction amount when performing pattern correction by the rule-based optical proximity effect correction method;
A correction target pattern storage area in which a correction target pattern including a plurality of element patterns is stored;
A processing device,
The processor is
The template pattern stored in the template storage area is compared with the correction target pattern stored in the correction target pattern storage area, and a matching part of both patterns is extracted as a matching part. The unmatched part is extracted as a non-matching part,
Of the correction target pattern, the part affected by the correction amount when applying the rule-based optical proximity effect correction method due to the mismatched part is extracted as a correction required part,
Performing the first correction based on the correction pattern stored in the template storage area for the portions other than the correction required portion of the matching portion of the correction target pattern,
The mask pattern production apparatus which performs 2nd correction | amendment based on the said rule base optical proximity effect correction table with respect to the said correction required part and the said mismatch part of the said correction | amendment object pattern. The processor is
The correction is performed on a portion excluding a front portion, which is a portion that is closed to the correction target pattern and cannot be applied with the rule-based optical proximity effect correction method, in the matching portion when performing the first correction. 2. The mask pattern manufacturing apparatus according to 1. The processor is
When a line segment connecting adjacent vertices of each element pattern of the template pattern completely matches a line segment connecting adjacent vertices of the element pattern of the correction target pattern, the matched line segment is The mask pattern manufacturing apparatus according to claim 1, wherein the mask pattern manufacturing apparatus extracts the matching part. Comparing the template pattern and the correction target pattern, extracting a matching part as a matching part, and extracting a non-matching part as a mismatching part;
Extracting a portion of the correction target pattern that is affected by the correction amount based on the rule-based optical proximity effect correction due to the mismatched portion as a correction required portion;
Performing a first correction based on a correction pattern prepared corresponding to the template pattern for a portion other than the portion to be corrected among the matching portions of the correction target pattern;
Performing the second correction by applying the rule-based optical proximity effect correction method to the correction required portion and the mismatched portion of the correction target pattern;
A mask pattern manufacturing method comprising: Comparing the template pattern and the correction target pattern, extracting a matching part as a matching part, and extracting a non-matching part as a mismatching part;
Extracting a portion of the correction target pattern that is affected by the correction amount based on the rule-based optical proximity effect correction due to the mismatched portion as a correction required portion;
Performing a first correction based on a correction pattern prepared corresponding to the template pattern for a portion other than the portion to be corrected among the matching portions of the correction target pattern;
Performing a second correction using the rule-based optical proximity correction method on the correction required portion and the mismatched portion of the correction target pattern;
Correcting the correction target pattern based on the results of the first correction and the second correction, and generating a correction pattern;
And a step of producing a mask based on the correction pattern.

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