CN106338883A - Optical proximity correction method - Google Patents
Optical proximity correction method Download PDFInfo
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- CN106338883A CN106338883A CN201510418859.9A CN201510418859A CN106338883A CN 106338883 A CN106338883 A CN 106338883A CN 201510418859 A CN201510418859 A CN 201510418859A CN 106338883 A CN106338883 A CN 106338883A
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- contact hole
- rectangle
- bad point
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- hole graph
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Abstract
The invention provides an optical proximity correction method. The optical proximity correction method comprises the following steps: providing a design layout with a dead-pixel contact hole pattern produced due to restriction of mask rule check, wherein for simulated contact holes formed by lithographic projection simulation of the dead-pixel contact hole pattern, the actual sizes of the simulated contact holes in a first axial direction are less than preset sizes; removing mask rule check restriction in designed rules in an area where the dead-pixel contact hole pattern is located; and after removal of the mask rule check restriction in designed rules, redesigning the dead-pixel contact hole pattern until a first contact hole pattern is obtained, wherein for first simulated contact holes formed by lithographic projection simulation of the first contact hole pattern, the actual sizes of the first simulated contact holes in the first axial direction are greater than or equal to the preset sizes. The optical proximity correction method can improve process windows forming contact holes and enhance a yield rate.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, to a kind of optical adjacent correction method.
Background technology
Integrated circuit is from extensive, ultra-large to very extensive development.Corresponding, partly lead
Body manufacturing process achieves significant progress, and the characteristic size of circuit is less and less, already close to or little
Optical wavelength in photoetching process.According to interference of light and diffraction principle, when light irradiates mask plate patterns
During on silicon chip, figure by due to each other optical proximity effect (optical proximity effects,
Ope) deform, thus leading to reduction or even the logical error of circuit performance.Therefore, it is necessary to adopt one
Making up the figure deformation being led to by optical proximity effect, this area designer often adopt a little modification methods
Be practical and lower-cost optical near-correction (optical proximity correction,
Opc) method.
The main process of opc is: according to the design shape of interference of light and diffraction principle and mask plate patterns
Shape, makes modification in advance on original mask plate patterns, so that the figure after exposure is as far as possible accurately
Ensure the reproduction of design shape and size.Some modification methods be by move in advance the side of original figure Lai
The shapes and sizes changing original figure are to carry out optical compensation, such as contact hole graph.Repair through above-mentioned
Positive contact hole graph also needs to check (mask rule check, mrc) by mask rule, to ensure
State figure to realize on mask plate.But, due to the restriction of mask rule inspection, for contact hole
The above-mentioned optical proximity correction of figure produces impact, leads to through the contact hole graph revised on mask plate
After realization, when being then transferred in test silicon wafer, do not reach the fixed pre-set dimension of design, thus final shadow
Ring the performance of whole circuit.
It is, therefore, desirable to provide a kind of method, to solve the above problems.
Content of the invention
The problem that the present invention solves is to provide a kind of optical adjacent correction method, sets for contact hole graph
Meter, improves the yield of contact hole graph, and improves the process window (process making contact hole
window).
For solving the above problems, the present invention provides a kind of optical adjacent correction method, comprising:
There is provided and check restriction to have the design layout of bad point contact hole graph because of mask rule, described bad point
Contact hole graph is carried out in the simulating contact hole that lithographic projection simulation is formed, and described simulating contact hole is first
Actual size in axial direction is less than pre-set dimension；
In described bad point contact hole graph region, remove the described mask rule inspection in design rule
Test restriction；
After described mask rule inspection in removing described design rule limits, to described bad point contact hole
Figure is redesigned, until obtaining the first contact hole graph, is entered according to described first contact hole graph
In the first simulating contact hole that the simulation of row lithographic projection is formed, described first simulating contact hole is described first
Actual size in axial direction is more than or equal to described pre-set dimension.
Optionally, when described first simulating contact hole, in described first axle, actual size upwards is little described pre-
If during size, repeat the process that described bad point contact hole graph is redesigned, until described first
In described first axle, actual size upwards is more than or equal to described pre-set dimension in simulating contact hole.
Optionally, in described design layout, two are mutually located at bad point contact hole pattern described in diagonal position
Shape is in the first rectangle and the second rectangle respectively, described bad point contact hole graph is carried out with redesign and includes:
Described first rectangle and the second rectangle are enlarged processing simultaneously, so that described first rectangle is expanded as
3rd rectangle, makes described second rectangle expand as the 4th rectangle, the area of described second rectangle is more than described
The area of the first rectangle, the area of described 4th rectangle is more than the area of described second rectangle.
Optionally, described expansion processes and is extended to a summit of described 3rd rectangle just with the described 4th
One summit of rectangle overlaps.
Optionally, described expansion processes an angle being extended to described 3rd rectangle and described 4th rectangle
One angle overlaps.
Optionally, the Breadth Maximum of described 3rd rectangle and described 4th rectangle intersection is
5nm～10nm.
Optionally, in described design layout, described bad point contact hole graph is all rectangular, and position
In same a line or same row；Described bad point contact hole graph is carried out redesign and include: by setting
Bridging part by be located at link together with the described bad point contact hole graph of a line or same row, with shape
Become described first contact hole graph.
Optionally, described bridging part is connected to the centre position of described rectangular edges.
Optionally, the width of bridging part is 5nm～10nm.
Optionally, described pre-set dimension is more than or equal to critical size.
Compared with prior art, technical scheme has the advantage that
In technical scheme, first provide and check restriction to have bad point contact hole pattern because of mask rule
The design layout of shape, and confirm described bad point contact hole graph carry out lithographic projection simulation formed simulation connect
In contact hole, in first axle, actual size upwards is less than pre-set dimension in described simulating contact hole；Then, so
Afterwards, in described bad point contact hole graph region, remove the described mask rule inspection in design rule
Test restriction；Afterwards, after the described mask rule inspection in removing described design rule limits, to described
Bad point contact hole graph is redesigned, until obtaining the first contact hole graph, connects according to described first
Contact hole figure carries out in the first simulating contact hole that lithographic projection simulation is formed, described first simulating contact hole
It is more than or equal to described pre-set dimension in described first axle actual size upwards.By methods described, can
Make to be originally used for bad point contact hole graph to become normal first contact hole graph, thus improving contact hole graph
Yield, and improve make contact hole process window (process window).
Brief description
Fig. 1 is the design layout schematic diagram with bad point contact hole graph that the embodiment of the present invention is provided；
Fig. 2 is that the design layout to Fig. 1 is enlarged the design layout schematic diagram after processing；
Fig. 3 is that the design layout with bad point contact hole graph that another embodiment of the present invention is provided is illustrated
Figure；
Fig. 4 is that the design layout to Fig. 3 is enlarged the design layout schematic diagram after processing；
Fig. 5 is partial structurtes enlarged diagram in design layout shown in Fig. 4；
Fig. 6 is that the design layout with bad point contact hole graph that another embodiment of the present invention is provided is illustrated
Figure；
Fig. 7 is that the design layout to Fig. 6 is enlarged the design layout schematic diagram after processing；
Fig. 8 is partial structurtes enlarged diagram in design layout shown in Fig. 7.
Specific embodiment
As described in background, in existing optical adjacent correction method, there is mask rule inspection
Limit, after leading to contact hole graph to be realized on mask plate, do not reach when being then transferred in test silicon wafer
Design fixed pre-set dimension, finally affect the performance of whole circuit.However, mask rule inspection limits
If all release (release) without removing the restriction of mask rule inspection, also circuit can be caused
Harmful effect.
For this reason, the present invention provides a kind of new optical adjacent correction method, and confirm: described bad point contact
Hole pattern carries out in the simulating contact hole that lithographic projection simulation is formed, and described simulating contact hole is first axially
On actual size be less than pre-set dimension；Then, in described bad point contact hole graph region, go
The described mask rule inspection fallen in design rule limits；Afterwards, the institute in removing described design rule
Stating after mask rule inspection limits, described bad point contact hole graph being redesigned, until obtaining the
One contact hole graph, carries out, according to described first contact hole graph, the first simulation that lithographic projection simulation is formed
In contact hole, described first simulating contact hole is more than or equal to described in described first axle actual size upwards
Pre-set dimension.By methods described, can make to be originally used for bad point contact hole graph to become normal first and connect
Contact hole figure, thus improving the yield of contact hole graph, and improves the process window making contact hole.
Understandable for enabling the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings
The specific embodiment of the present invention is described in detail.
The embodiment of the present invention provides a kind of optical adjacent correction method, including step 1 to step 3.
Step 1: provide and check restriction to have the design layout of bad point contact hole graph because of mask rule, such as
Shown in Fig. 1.
In the present embodiment, described design layout is used for being subsequently formed corresponding light shield (or claiming lay photoetching mask plate).
Fig. 1, in described design layout, corresponding display has been made in corresponding active area 101 position.Generally,
In described design layout, contact hole graph designs in the position corresponding to active area 101.Need explanation
It is that active area 101 and contact hole graph are typically fabricated in different light shields, but by them in Fig. 1
It is shown in same plane.
In described design layout, described design layout includes multiple Subresolution scattering strips to Fig. 1
(scattering bar) figure 102, and multiple bad point contact hole graph, to two therein in Fig. 1
Bad point contact hole graph is labeled, respectively bad point contact hole graph 1031 and bad point contact hole graph
1032.It should be noted that Subresolution scattering strip figure 102 and contact hole graph are produced on same light
In cover, for strengthening the resolution of contact hole graph.
In the present embodiment, bad point contact hole graph 1031 and the equal rectangle of bad point contact hole graph 1032, point
Wei not the first rectangle and the second rectangle.
In the present embodiment, bad point contact hole graph 1031 and bad point contact hole graph 1032 are for two mutually
Positioned at the figure of diagonal position, it is located at the figure of diagonal position in other words each other for two.
Bad point contact hole graph 1031 and bad point contact hole graph 1032 are two and are mutually located at diagonal position
Figure refer to, they have an angle relatively, form a kind of " angle is diagonal " position relationship.That is,
If they are placed in the ranks array that two row two arrange, they are not located at same a line, are not located at yet
Same row, and it is in adjacent lines, and it is located at adjacent column, particular location relation refers to shown in Fig. 1.
As shown in figure 1, in the present embodiment, first confiring that the Crack cause of above-mentioned bad point contact hole graph is:
Carry out in the simulating contact hole that lithographic projection simulation is formed according to described bad point contact hole graph, described simulation
In first axle, actual size upwards is less than pre-set dimension to contact hole.
In the present embodiment, described first is axially the horizontal of plane shown in Fig. 1 in the present embodiment.Other
In embodiment, described first can also be axially other directions.Specifically, bad point contact hole graph 1031
Carry out the simulating contact hole 1041 that lithographic projection simulation is formed.Simulating contact hole 1041 is in first axle upwards
Actual size is transverse width w1.Bad point contact hole graph 1032 carries out the mould that lithographic projection simulation is formed
Intend contact hole 1042.In first axle, actual size upwards is transverse width w2 in simulating contact hole 1042.
Bad point contact hole graph 1031 and bad point contact hole graph 1032 Crack cause are transverse width w1 and horizontal stroke
It is less than pre-set dimension to width w2, and pre-set dimension is usually and can finally be existed using respective design domain
The minimum required size of normal contact hole graph is formed on wafer.On the other hand, described pre-set dimension is more than
Critical size equal to corresponding technique.
It should be noted that although simulating contact hole 1041 and simulating contact hole 1042 show in FIG,
But they are the same with active area 101, it is not necessary being in described design layout.
The reason analyze bad point contact hole graph further understands, in existing method, design layout is being entered
During row design, need to carry out mask rule inspection that is to say, that corresponding design layout is advised by mask
Then inspection limits.Particularly contact hole graph, limits due to there is mask rule inspection, therefore, they
Size in certain axial direction is always unable to reach pre-set dimension.
Step 2: in described bad point contact hole graph region, remove the described mask in design rule
Rule inspection limits.
In the present embodiment, according to determined by described bad point contact hole graph, judge specifically to need to remove
The region that described mask rule inspection limits, and in other region, still retain described mask rule inspection
Restriction.
For example in Fig. 1, due to only having two bad point contact hole graph, respectively bad point contact hole graph 1031
With bad point contact hole graph 1032, therefore it may only be necessary to can be by bad point contact hole graph 1031 and bad point
In the minimum rectangular area (not shown) that contact hole graph 1032 is surrounded, remove described mask rule inspection
Limit, and the restriction of described mask rule inspection then need not be removed in other region.Certainly, implement other
It is also possible to suitable expansion removes the region that described mask rule inspection limits in example, for example described region is expanded
Greatly to the maximum allowable region not affecting other graphic designs.
It should be noted that in other embodiments, when only bad point contact hole graph 1031 or only bad point
During contact hole graph 1032, it would however also be possible to employ with remove described mask in the range of the present embodiment same area
The restriction of rule inspection, thus to making corresponding bad point contact hole graph be redesigned, formation meets
The design layout requiring.
Step 3: after the described mask rule inspection in removing described design rule limits, to described bad point
Contact hole graph is redesigned, until obtaining the first contact hole graph, according to described first contact hole
Figure is carried out in the first simulating contact hole that lithographic projection simulation is formed, and described first simulating contact hole is in institute
State first axle actual size upwards and be more than or equal to described pre-set dimension.
Refer to Fig. 2, in the present embodiment, in described design layout, due to bad point contact hole graph 1031
Mutually it is located at diagonal position with bad point contact hole graph 1032, therefore, to bad point contact hole graph 1031
Carry out redesigning with bad point contact hole graph 1032 and include: to described first rectangle and the second rectangle simultaneously
It is enlarged processing, so that described first rectangle expands as the 3rd rectangle, so that described second rectangle is expanded
For the 4th rectangle, the area of described second rectangle is more than the area of described first rectangle, described 4th rectangle
Area be more than described second rectangle area.And the 3rd rectangle corresponds to the first contact hole graph 1033,
4th rectangle corresponds to the first contact hole graph 1034.
In the present embodiment, the summit that described expansion process is extended to described 3rd rectangle is just and described
One summit of the 4th rectangle overlaps.That is, bad point contact hole graph 1031 contacts hole pattern with bad point
Shape 1032 is enlarged processing, and makes bad point contact hole graph 1031 expand as the first contact hole graph 1033,
Bad point contact hole graph 1032 is made to expand as the first contact hole graph 1034.First contact hole graph 1033
Area be more than the area of bad point contact hole graph 1031, the area of the first contact hole graph 1034 is more than
The area of bad point contact hole graph 1032.And, a summit of contact hole graph 1033 is just with the
One summit of one contact hole graph 1034 overlaps.
Please continue to refer to Fig. 2, in the present embodiment, being processed by described expansion makes contact hole graph 1033
After one summit is overlapped with a summit of the first contact hole graph 1034 just, according to the first contact hole pattern
Shape 1033 carries out the first simulating contact hole 1043 that lithographic projection simulation is formed, according to the first contact hole graph
1034 carry out the first simulating contact hole 1044 that lithographic projection simulation is formed, and the first simulating contact hole 1043
It is transverse width w3 in described first axle actual size upwards, the first simulating contact hole 1044 is described
First axle actual size upwards is transverse width w4, and, now transverse width w3 is more than or equal to institute
State pre-set dimension, transverse width w4 is also greater than equal to described pre-set dimension.
This is because, eliminate after the inspection of described mask rule limits it becomes possible to right in above-mentioned specific region
Described bad point contact hole graph is redesigned, now can be to the size of described bad point contact hole graph
Be enlarged, such as in the present embodiment, can make bad point contact hole graph 1031 in Fig. 1 to the left and to
Under expand simultaneously so that the first contact hole graph 1033 area being formed be more than bad point contact hole graph
1031.Likewise, the bad point contact hole graph 1032 in Fig. 1 can be made to expand right and up simultaneously,
So that the first contact hole graph 1034 being formed is more than bad point contact hole graph 1032.And finally make
First simulating contact hole 1043 is more than in described first axle actual size (transverse width w3) upwards etc.
In described pre-set dimension, make the first simulating contact hole 1044 actual size in described first axle upwards (horizontal
To width w4) it is more than or equal to described pre-set dimension, so that whole design layout meets making requiring, carry
Height is subsequently using process window and the yield of the contact hole graph making design layout be formed.
It should be noted that in other embodiments, when described first simulating contact hole is in described first axle
During the little described pre-set dimension of actual size upwards, can repeat described bad point contact hole graph is carried out with weight
Newly-designed process, until finally described first simulating contact hole in described first axle actual size upwards
More than or equal to described pre-set dimension.
Another embodiment of the present invention provides another kind of optical adjacent correction method, including step 1 to step 3,
Incorporated by reference to reference to Fig. 3 and Fig. 4.
Step 1: provide and check restriction to have the design layout of bad point contact hole graph because of mask rule, such as
Shown in Fig. 3.
In the present embodiment, described design layout is used for being subsequently formed corresponding light shield (or claiming lay photoetching mask plate).
Fig. 3, in described design layout, corresponding display has been made in corresponding active area 201 position.Generally,
In described design layout, contact hole graph designs in the position corresponding to active area 201.
In described design layout, described design layout includes multiple Subresolution scattering strip figures 202 to Fig. 3,
And multiple bad point contact hole graph, in Fig. 3, two bad point contact hole graph therein are labeled,
It is respectively bad point contact hole graph 2031 and bad point contact hole graph 2032.
In the present embodiment, bad point contact hole graph 2031 and the equal rectangle of bad point contact hole graph 2032, point
Wei not the first rectangle and the second rectangle.
In the present embodiment, bad point contact hole graph 2031 and bad point contact hole graph 2032 are for two mutually
Positioned at the figure of diagonal position, it is located at the figure of diagonal position in other words each other for two.
Bad point contact hole graph 2031 and bad point contact hole graph 2032 are two and are mutually located at diagonal position
Figure refer to, they have an angle relatively, form a kind of " angle is diagonal " position relationship.That is,
If they are placed in the ranks array that two row two arrange, they are not located at same a line, are not located at yet
Same row, and it is in adjacent lines, and it is located at adjacent column, particular location relation refers to shown in Fig. 3.
As shown in figure 3, in the present embodiment, first confiring that the Crack cause of above-mentioned bad point contact hole graph is:
Carry out in the simulating contact hole that lithographic projection simulation is formed according to described bad point contact hole graph, described simulation
In first axle, actual size upwards is less than pre-set dimension to contact hole.
In the present embodiment, described first is axially the horizontal of plane shown in Fig. 3 in the present embodiment.Other
In embodiment, described first can also be axially other directions.Specifically, bad point contact hole graph 2031
Carry out the simulating contact hole 2041 that lithographic projection simulation is formed, simulating contact hole 2041 is in first axle upwards
Actual size is transverse width w5, and bad point contact hole graph 2032 carries out the mould that lithographic projection simulation is formed
Intend contact hole 2042, actual size upwards is transverse width w6 in first axle in simulating contact hole 2042.
Bad point contact hole graph 2031 and bad point contact hole graph 2032 Crack cause are transverse width w5 and horizontal stroke
It is less than pre-set dimension to width w6, and pre-set dimension is usually and can finally be existed using respective design domain
The minimum required size of normal contact hole graph is formed on wafer, described pre-set dimension is more than or equal to corresponding work
The critical size of skill.
It should be noted that although simulating contact hole 2041 and simulating contact hole 2042 show in figure 3,
But they are the same with active area 201, it is not necessary being in described design layout.
The reason analyze bad point contact hole graph further understands, in existing method, design layout is being entered
During row design, need to carry out mask rule inspection that is to say, that corresponding design layout is advised by mask
Then inspection limits.Particularly contact hole graph, limits due to there is mask rule inspection, therefore, they
Size in certain axial direction is always unable to reach pre-set dimension.
Step 2: in described bad point contact hole graph region, remove the described mask in design rule
Rule inspection limits.
In the present embodiment, according to determined by described bad point contact hole graph, judge specifically to need to remove
The region that described mask rule inspection limits, and in other region, still retain described mask rule inspection
Restriction.
For example in Fig. 3, due to only having two bad point contact hole graph, respectively bad point contact hole graph 2031
With bad point contact hole graph 2032, therefore it may only be necessary to can be by bad point contact hole graph 2031 and bad point
In the minimum rectangular area (not shown) that contact hole graph 2032 is surrounded, remove described mask rule inspection
Limit, and the restriction of described mask rule inspection then need not be removed in other region.Certainly, implement other
It is also possible to suitable expansion removes the region that described mask rule inspection limits in example, for example described region is expanded
Greatly to the maximum allowable region not affecting other graphic designs.
It should be noted that in other embodiments, when only bad point contact hole graph 2031 or only bad point
During contact hole graph 2032, it would however also be possible to employ with remove described mask in the range of the present embodiment same area
The restriction of rule inspection, thus to making corresponding bad point contact hole graph be redesigned, formation meets
The design layout requiring.
Step 3: after the described mask rule inspection in removing described design rule limits, to described bad point
Contact hole graph is redesigned, until obtaining the first contact hole graph, according to described first contact hole
Figure is carried out in the first simulating contact hole that lithographic projection simulation is formed, and described first simulating contact hole is in institute
State first axle actual size upwards and be more than or equal to described pre-set dimension.
Refer to Fig. 4, in the present embodiment, in described design layout, due to bad point contact hole graph 2031
Mutually it is located at diagonal position with bad point contact hole graph 2032, therefore, to bad point contact hole graph 2031
Carry out redesigning with bad point contact hole graph 2032 and include: to described first rectangle and the second rectangle simultaneously
It is enlarged processing, so that described first rectangle expands as the 3rd rectangle, so that described second rectangle is expanded
For the 4th rectangle, the area of described second rectangle is more than the area of described first rectangle, described 4th rectangle
Area be more than described second rectangle area.And the 3rd rectangle corresponds to the first contact hole graph 2033,
4th rectangle corresponds to the first contact hole graph 2034.
In the present embodiment, described expansion processes an angle being extended to described 3rd rectangle and described 4th square
One angle of shape overlaps.
That is, bad point contact hole graph 2031 and bad point contact hole graph 2032 are enlarged processing,
Make bad point contact hole graph 2031 expand as the first contact hole graph 2033, make bad point contact hole graph 2032
Expand as the first contact hole graph 2034, the area of the first contact hole graph 2033 is more than bad point and contacts hole pattern
The area of shape 2031, the area of the first contact hole graph 2034 is more than the face of bad point contact hole graph 2032
Long-pending, and an angle of a contact hole graph 2033 angle weight with the first contact hole graph 2034 just
Close.
Please continue to refer to Fig. 4, in the present embodiment, being processed by described expansion makes contact hole graph 2033
After one summit is overlapped with a summit of the first contact hole graph 2034 just, according to the first contact hole pattern
Shape 2033 carries out the first simulating contact hole 2043 that lithographic projection simulation is formed, according to the first contact hole graph
2034 carry out the first simulating contact hole 2044 that lithographic projection simulation is formed, and the first simulating contact hole 2043
It is transverse width w7 in described first axle actual size upwards, the first simulating contact hole 2044 is described
First axle actual size upwards is transverse width w8, and, now transverse width w7 is more than or equal to institute
State pre-set dimension, transverse width w8 is also greater than equal to described pre-set dimension.
This is because, eliminate after the inspection of described mask rule limits it becomes possible to right in above-mentioned specific region
Described bad point contact hole graph is redesigned, now can be to the size of described bad point contact hole graph
Be enlarged, such as in the present embodiment, can make bad point contact hole graph 2031 in Fig. 3 to the left and to
Under expand simultaneously so that the first contact hole graph 2033 area being formed be more than bad point contact hole graph
2031.Likewise, the bad point contact hole graph 2032 in Fig. 3 can be made to expand right and up simultaneously,
So that the first contact hole graph 2034 area being formed is more than bad point contact hole graph 2032.And
Make the first simulating contact hole 2043 actual size (transverse width w7) in described first axle upwards big eventually
In equal to described pre-set dimension, make the first simulating contact hole 2044 in described first axle actual size upwards
(transverse width w8) is more than or equal to described pre-set dimension, so that whole design layout meets making requiring,
Improve process window and the yield subsequently using the contact hole graph making design layout be formed.
It should be noted that, although the first contact hole graph 2033 and the first contact hole graph 2034 respectively have
One angle directly overlapped together, but the contact hole being formed according to this two contact hole graph is but not
Can therefore and directly merge, two contact bore edges that they are correspondingly formed can move closer to, only
Have when two angle laps are larger, two contact holes just can be led to merge, and the present embodiment
In, by content shown in Fig. 5, prevent two contact holes from merging.
Refer to Fig. 5, show in Fig. 4, the enlarged diagram of the 3rd rectangle and the 4th rectangle intersection,
The Breadth Maximum of described 3rd rectangle and described 4th rectangle intersection is 5nm～10nm.On the one hand, originally
Embodiment makes the Breadth Maximum w9 of intersection in more than 5nm, thus ensureing the first contact hole graph 2033
Area can be more more than bad point contact hole graph 2031 area expands, thus ensureing the first simulating contact hole
2043 are more than or equal to described pre-set dimension in described first axle actual size (transverse width w7) upwards,
And ensure that the first contact hole graph 2034 area can be more more than bad point contact hole graph 2032 area expands,
Thus ensureing the first simulating contact hole 2044 actual size (transverse width w8) in described first axle upwards
More than or equal to described pre-set dimension；On the other hand, if Breadth Maximum w9 is more than 10nm, the first mould
Intend contact hole 2043 and the first simulating contact hole 2044 easily merges, form a simulating contact
Hole, in order to ensure that the first simulating contact hole 2043 and the first simulating contact hole 2044 remain separate two
Individual contact hole, controls Breadth Maximum w9 in below 10nm.
It should be noted that in other embodiments, when described first simulating contact hole is in described first axle
During the little described pre-set dimension of actual size upwards, can repeat described bad point contact hole graph is carried out with weight
Newly-designed process, until finally described first simulating contact hole in described first axle actual size upwards
More than or equal to described pre-set dimension.
Another embodiment of the present invention provides another kind of optical adjacent correction method, including step 1 to step 3,
Incorporated by reference to reference to Fig. 6 to Fig. 8.
Step 1, provides and checks restriction to have the design layout of bad point contact hole graph because of mask rule, institute
State bad point contact hole graph and carry out in the simulating contact hole that lithographic projection simulation is formed, described simulating contact hole
It is less than pre-set dimension in first axle actual size upwards.
In the present embodiment, described design layout is used for being subsequently formed corresponding light shield (or claiming lay photoetching mask plate).
In the present embodiment, described first is axially the longitudinal direction of plane shown in Fig. 6 in the present embodiment.Other
In embodiment, described first can also be axially other directions.
Specifically, refer to Fig. 6, show the design layout with bad point contact hole graph, described design
Domain includes multiple Subresolution scattering strip figures 301, and multiple bad point contact hole graph 303.Additionally,
Also show gate patterns 302 in Fig. 6.It should be noted that gate patterns 302 contact hole pattern with bad point
Shape 303 would generally be produced on different light shields, but Fig. 6 shows them in the same plane.
In described design layout, bad point contact hole graph 303 is in that string is arranged, and, the present embodiment is true
The appearance reason recognizing described bad point contact hole graph 303 is: is entered according to described bad point contact hole graph 303
In the simulating contact hole 304 that the simulation of row lithographic projection is formed, described simulating contact hole 304 is first axially
On actual size be longitudinal height h1, and longitudinal height h1 is less than pre-set dimension.
In summary, in Fig. 6, the height h1 of bad point contact hole graph 303 is less than described pre-set dimension.
Its reason may be referred to previous embodiment corresponding contents.
In the present embodiment, pre-set dimension is usually and adopts respective design domain can finally be formed on wafer
The minimum required size of normal contact hole graph, described pre-set dimension is more than or equal to the crucial chi of corresponding technique
Very little.
Step 2, in bad point contact hole graph 303 region, removes the described mask in design rule
Rule inspection limits.
In the present embodiment, because bad point contact hole graph 303 is string, therefore, it can bad point is contacted
The described mask rule inspection that hole pattern 303 column corresponding region is removed in design rule limits.Certainly,
Other can also not affected on the basis of the figure of same light shield, suitably expand and remove design rule
In the region that limits of described mask rule inspection.
Step 3, after the described mask rule inspection in removing described design rule limits, to described bad point
Contact hole graph 303 is redesigned, until obtaining the first contact hole graph 305, according to described first
Contact hole graph 305 carries out in the first simulating contact hole 306 that lithographic projection simulation is formed, and described first
In described first axle, actual size upwards is more than or equal to described pre-set dimension in simulating contact hole 306.
Refer to Fig. 7, in the present embodiment, in described design layout, due to bad point contact hole graph 303
All rectangular, and it is located at same row, therefore, described bad point contact hole graph 303 is carried out again
Design includes: by arranging bridging part 307 by the described bad point contact hole graph 303 positioned at same row
Link together, to form described first contact hole graph 305.
It should be noted that in other embodiments, bad point contact hole graph be located at during a line it is also possible to
By arrange bridging part by be located at link together with the described bad point contact hole graph of a line.
In the present embodiment, described bridging part 307 is connected to the centre position of described rectangular edges, is connected to
Centre position can farthest make corresponding contact hole, and longitudinally height expands, so that described first mould
Intend contact hole actual size in described first axle upwards and be more than or equal to described pre-set dimension.
The acting as of described bridging part 307: due to there is bridging part 307, described bridging part 307
Two adjacent for column direction bad point contact hole graph 303 are linked together, so, according to being bridged portion
When bad point contact hole graph 303 after dividing 307 to connect is simulated again, the first contact hole 305 of formation
In, the first contact hole 305 can be bigger than the simulating contact hole 304 of script in the size of column direction, i.e. Fig. 7
In longitudinal height h2 can meet contact more than the longitudinal height h1 in Fig. 6, the first contact hole 305
The dimensional requirement in hole.That is, final be used for using the design layout with this bridging part 307
On wafer formed contact hole when, the contact hole of formation can be made to meet dimensional requirement it is known that, methods described
The process window forming contact hole can be improved, and improve the formation yield of contact hole.
Refer to Fig. 8, in the present embodiment, the width w10 of bridging part 307 is controlled to 5nm～10nm.
The functioning as described above of described bridging part 307.Therefore, in order to ensure the longitudinal direction of the first contact hole 305
Height h2 is larger, to meet corresponding dimensional requirement, needs to ensure the width w10 of bridging part 307
In more than 5nm, meanwhile, the contact hole in order to subsequently prevent adjacent merges, and needs to ensure width
W10 is in below 10nm.
It should be noted that in other embodiments, when described first simulating contact hole is in the described first axial direction
On actual size little described pre-set dimension when, repeat described bad point contact hole graph is redesigned
Process, until described first simulating contact hole is more than or equal to institute in described first axle actual size upwards
State pre-set dimension.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, all can make various changes or modifications, therefore the guarantor of the present invention
Shield scope should be defined by claim limited range.
Claims (10)
1. a kind of optical adjacent correction method is it is characterised in that include:
There is provided and check restriction to have the design layout of bad point contact hole graph because of mask rule, described bad point
Contact hole graph is carried out in the simulating contact hole that lithographic projection simulation is formed, and described simulating contact hole is first
Actual size in axial direction is less than pre-set dimension；
In described bad point contact hole graph region, remove the described mask rule inspection in design rule
Test restriction；
After described mask rule inspection in removing described design rule limits, to described bad point contact hole
Figure is redesigned, until obtaining the first contact hole graph, is entered according to described first contact hole graph
In the first simulating contact hole that the simulation of row lithographic projection is formed, described first simulating contact hole is described first
Actual size in axial direction is more than or equal to described pre-set dimension.
2. optical adjacent correction method as claimed in claim 1 connects it is characterised in that working as described first simulation
Contact hole, repeats described bad point is connect during the little described pre-set dimension of actual size upwards in described first axle
The process that contact hole figure is redesigned, until described first simulating contact hole is described first axially
On actual size be more than or equal to described pre-set dimension.
3. optical adjacent correction method as claimed in claim 1 is it is characterised in that in described design layout,
Two are mutually located at bad point contact hole graph described in diagonal position is in the first rectangle and the second rectangle respectively,
Described bad point contact hole graph is carried out redesign and include: be same to described first rectangle and the second rectangle
When be enlarged process so that described first rectangle expands as the 3rd rectangle, make described second rectangle
Expand as the 4th rectangle, the area of described second rectangle is more than the area of described first rectangle, described the
The area of four rectangles is more than the area of described second rectangle.
4. optical adjacent correction method as claimed in claim 3 is it is characterised in that described expansion processes expansion
A summit to described 3rd rectangle is overlapped with a summit of described 4th rectangle just.
5. optical adjacent correction method as claimed in claim 3 is it is characterised in that described expansion processes expansion
An angle to described 3rd rectangle is overlapped with an angle of described 4th rectangle.
6. optical adjacent correction method as claimed in claim 5 is it is characterised in that described 3rd rectangle and institute
The Breadth Maximum stating the 4th rectangle intersection is 5nm～10nm.
7. optical adjacent correction method as claimed in claim 1 is it is characterised in that in described design layout,
Described bad point contact hole graph is all rectangular, and is located at a line or same row；To described bad
Point contact hole graph carries out redesigning and includes: will be located at same a line or same by arranging bridging part
The described bad point contact hole graph of string links together, to form described first contact hole graph.
8. optical adjacent correction method as claimed in claim 7 is it is characterised in that described bridging part connects
Centre position in described rectangular edges.
9. optical adjacent correction method as claimed in claim 7 is it is characterised in that the width of bridging part is
5nm～10nm.
10. optical adjacent correction method as claimed in claim 1 is it is characterised in that described pre-set dimension is more than
Equal to critical size.
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| CN201510418859.9A CN106338883B (en) | 2015-07-16 | 2015-07-16 | Optical proximity correction method |
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| CN110597011A (en) * | 2018-06-13 | 2019-12-20 | 长鑫存储技术有限公司 | Mask auxiliary pattern setting method and mask |
| CN112051707A (en) * | 2020-09-25 | 2020-12-08 | 泉芯集成电路制造(济南)有限公司 | Optical proximity effect correction method and device |
| CN114063384A (en) * | 2022-01-14 | 2022-02-18 | 深圳晶源信息技术有限公司 | Mask pattern correction method |
| CN114815495A (en) * | 2021-01-29 | 2022-07-29 | 中芯国际集成电路制造(上海)有限公司 | Layout correction method and system, mask, equipment and storage medium |
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