CN114050194A - 一种柔性砷化镓太阳电池支撑衬底及粘接工艺 - Google Patents

一种柔性砷化镓太阳电池支撑衬底及粘接工艺 Download PDF

Info

Publication number
CN114050194A
CN114050194A CN202111293702.XA CN202111293702A CN114050194A CN 114050194 A CN114050194 A CN 114050194A CN 202111293702 A CN202111293702 A CN 202111293702A CN 114050194 A CN114050194 A CN 114050194A
Authority
CN
China
Prior art keywords
flexible
wafer
support substrate
layer
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111293702.XA
Other languages
English (en)
Inventor
李晓东
铁剑锐
许军
杜永超
孙希鹏
王鑫
梁存宝
肖志斌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin Hengdian Space Power Source Co ltd
CETC 18 Research Institute
Original Assignee
Tianjin Hengdian Space Power Source Co ltd
CETC 18 Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianjin Hengdian Space Power Source Co ltd, CETC 18 Research Institute filed Critical Tianjin Hengdian Space Power Source Co ltd
Priority to CN202111293702.XA priority Critical patent/CN114050194A/zh
Publication of CN114050194A publication Critical patent/CN114050194A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明公开了一种柔性砷化镓太阳电池支撑衬底及粘接工艺，属于太阳电池技术领域，其特征在于，至少包括：双面胶带和刚性支撑衬底；其中：所述双面胶带位于柔性电池晶圆和刚性支撑衬底之间；所述双面胶带包括：胶带基体层；具有UV失粘或者热失粘特性的第一胶层，所述第一胶层位于柔性电池晶圆和胶带基体层之间；不具有UV失粘或者热失粘特性的第二胶层，所述第二胶层位于胶带基体层和刚性支撑衬底之间。通过采用上述技术方案，本发明无需键合工艺，采用双面胶带粘接刚性支撑衬底的方法，可以实现批量化粘接刚性支撑衬底。

Description

一种柔性砷化镓太阳电池支撑衬底及粘接工艺
技术领域
本发明属于太阳电池技术领域，具体涉及一种柔性砷化镓太阳电池支撑衬底及粘接工艺。
背景技术
柔性砷化镓太阳电池具有转换效率高、弯曲性能好的优点，是一种新型高性能太阳电池。近年来，柔性砷化镓太阳电池技术发展非常迅速，并且已经在航天器上进行了应用。
柔性砷化镓太阳电池的电池有源层只有约10微米厚度，有源层附着在柔性衬底上，其电池性能不会因为弯曲而减退。柔性砷化镓太阳电池的衬底有金属衬底、聚酰亚胺衬底、PET衬底等。在柔性太阳电池加工过程中，需要首先将晶圆与柔性衬底连接成为一个整体，之后连接到刚性支撑衬底上，随后的工艺均在包含刚性支撑衬底的晶圆上进行。
在LED等相关微电子工艺中，支撑衬底一般采用键合方式进行，键合工艺难以批量处理晶圆，且处理时间较长，但是在芯片尺寸非常小的微电子工艺中，键合时间平摊到每个芯片上则显得微不足道。然而对于柔性砷化镓太阳电池而言，其尺寸远远大于一般芯片，键合一片晶圆产出的电池数量也远远小于一般芯片的产出，因此键合工艺的引入会对柔性砷化镓太阳电池的产能造成不利影响。
发明内容
本发明为解决公知技术中存在的技术问题，提供一种柔性砷化镓太阳电池支撑衬底及粘接工艺，无需键合工艺，采用双面胶带(包含基材、基材上表面胶层和下表面胶层)粘接刚性支撑衬底的方法，可以实现批量化粘接刚性支撑衬底。
本发明的第一目的是提供一种柔性砷化镓太阳电池支撑衬底，至少包括双面胶带(2)和刚性支撑衬底(6)；其中：
所述双面胶带(2)位于柔性电池晶圆(1)和刚性支撑衬底(6)之间；所述双面胶带(2)包括：
胶带基体层(4)；
具有UV失粘或者热失粘特性的第一胶层(3)，所述第一胶层(3)位于柔性电池晶圆(1)和胶带基体层(4)之间；
不具有UV失粘或者热失粘特性的第二胶层(5)，所述第二胶层(5)位于胶带基体层(4)和刚性支撑衬底(6)之间。
优选地，所述柔性电池晶圆(1)为镀有金属层的晶圆。
优选地，所述第一胶层(3)和第二胶层(5)的胶层厚度均大于10μm。
优选地，所述第一胶层(3)在90℃下保持稳定，且热解温度不高于120℃。
优选地，所述第二胶层(5)在至少120℃下保持稳定。
优选地，所述胶带基体层(4)的基材采用PI材料，基材厚度大于20μm。
优选地，刚性支撑衬底(6)的形状、尺寸与柔性电池晶圆(1)的形状、尺寸相同。
优选地，所述柔性砷化镓太阳电池支撑衬底的粘接工艺均在真空状态下进行.
本发明的第二目的是提供一种柔性砷化镓太阳电池支撑衬底的粘接工艺，包括如下步骤：
S1、晶圆预处理；具体为：
对晶圆进行清洁，然后在晶圆下表面镀20μm的柔性金属层；形成柔性电池晶圆(1)；
S2、在柔性电池晶圆(1)下表面粘接双面胶带；具体为：
在大气环境中，采用滚轮方式，将柔性电池晶圆(1)的金属层面与双面胶带(2)热失粘特性的第一胶层(3)粘接；
S3、粘接刚性支撑衬底(6)；具体为：
将所述S2阶段后的柔性电池晶圆外侧第二胶层(5)与刚性支撑衬底(6)在真空状态下对准、贴合；
S4、柔性电池晶圆(1)的再加工；具体为：
进行腐蚀、光刻加工流程，直至分离电池步骤；
S5、分离电池；具体为：
将所述柔性电池晶圆(1)放置在130℃的热盘上，加热约10min，柔性电池与支撑衬底完全解粘，取下柔性电池，完成电池分离。
优选地，在S3中，真空度为1pa。
本发明的第三目的是提供一种柔性砷化镓太阳电池支撑衬底的粘接工艺，包括如下步骤：
S1、晶圆预处理；具体为：
对晶圆进行清洁，然后在晶圆下表面镀20μm的柔性金属层；形成柔性电池晶圆(1)；
S2、在刚性支撑衬底(6)上表面粘接双面胶带；具体为：
在大气环境下，采用滚轮将双面胶带(2)不具有热失粘特性的第二胶层(5)与刚性支撑衬底(6)粘接；
S3、粘接柔性电池晶圆(1)；具体为：
将S2阶段后的刚性支撑衬底外侧第一胶层(3)与所述柔性电池晶圆(1)与在真空状态下对准、贴合；
S4、柔性电池晶圆(1)的再加工；具体为：
进行腐蚀、光刻加工流程，直至分离电池步骤；
S5、分离电池；具体为：
将所述柔性电池晶圆(1)放置在130℃的热盘上，加热约10min，柔性电池与支撑衬底完全解粘，取下柔性电池，完成电池分离。
优选地，在S3中，真空度为1pa。
本发明具有的优点和积极效果是：
本发明无需键合工艺，采用双面胶带(包含基材、基材上表面胶层和下表面胶层)粘接刚性支撑衬底的方法，可以实现批量化粘接刚性支撑衬底。
附图说明
图1为本发明优选实施例的结构示意图。
其中：1、柔性电池晶圆；2、双面胶带；3、第一胶层；4、胶带基体层；5、第二胶层；6、刚性支撑衬底。
具体实施方式
为能进一步了解本发明的发明内容、特点及功效，兹例举以下实施例，并配合附图详细说明如下：
如图1所示，本发明的技术方案为：
一种柔性砷化镓太阳电池支撑衬底，自上而下依次为：柔性电池晶圆1、双面胶带2、第一胶层3、胶带基体层4、第二胶层5和刚性支撑衬底6；其中：
本发明采用的双面胶带与柔性电池晶圆面粘接的胶层具有UV失粘或者热失粘特性、与刚性支撑衬底面粘接的胶层不具有失粘特性；双面胶带两面均具有保护膜，撕掉保护膜后可以进行粘接；
本发明采用的双面胶带上下表面胶层厚度均大于10μm；
本发明采用的双面胶带基材采用PI材料，基材厚度大于20μm，以提供良好的受压缓冲特性；
本发明采用的双面胶带双面的胶层均可以耐温90℃。
本发明双面胶带如采用UV失粘方式，则刚性支撑衬底和基材应具有UV透过特性。
本发明粘接刚性支撑衬底的方式是：在大气环境下采用滚轮将双面胶带粘接在刚性支撑衬底上，之后在真空环境(约1Pa)下与晶圆进行粘接，粘接完毕后进行适度层压。
也可将双面胶带首先粘接在晶圆上，之后再在真空环境下与刚性支撑衬底粘接。
在上述优选实施例的基础之上：
双面胶带与晶圆、刚性支撑衬底的粘接均在真空环境下进行。
刚性支撑衬底的形状、尺寸与晶圆完全相同。
一种柔性砷化镓太阳电池支撑衬底的粘接工艺，包括：
1、粘接前柔性电池晶圆状态；
晶圆侧镀有约20μm的柔性金属层，晶圆已经进行清洁处理。
2、柔性电池晶圆粘接双面胶带；
在大气状态下采用滚轮方式，将晶圆金属层面与双面胶带热失粘特性的胶面粘接，已知热失粘胶带在130℃温度下加热10min完全失粘。
3.粘接刚性支撑衬底
将粘接双面胶带的晶圆与刚性支撑衬底在真空状态下对准、贴合。真空度为1pa，真空粘接保证胶带粘接时没有气泡。
4.晶圆的继续加工
带有刚性支撑衬底的晶圆继续进行腐蚀、光刻等半导体加工流程，直至分离电池步骤(刚性支撑衬底与柔性单体电池分离)。
5.分离电池
将带有刚性支撑衬底的晶圆放置在130℃的热盘上，加热约10min，柔性电池与支撑衬底完全解粘。取下柔性电池，完成电池分离。
一种柔性砷化镓太阳电池支撑衬底的粘接工艺，包括：
1、粘接前晶圆状态；
晶圆侧镀有约20μm的柔性金属层，晶圆已经进行清洁处理。
2、刚性支撑衬底粘接双面胶带；
在大气状态下采用滚轮方式，将刚性支撑衬底与双面胶带非热失粘特性的胶面粘接，已知热失粘胶带在130℃温度下加热10min完全失粘。
3.粘接晶圆
将粘接双面胶带的刚性支撑衬底与晶圆在真空状态下对准、贴合。真空度为1pa，真空粘接保证胶带粘接时没有气泡。
4.晶圆的继续加工
带有刚性支撑衬底的晶圆继续进行腐蚀、光刻等半导体加工流程，直至分离电池步骤(刚性支撑衬底与柔性单体电池分离)。
5.分离电池
将带有刚性支撑衬底的晶圆放置在130℃的热盘上，加热约10min，柔性电池与支撑衬底完全解粘。取下柔性电池，完成电池分离。
以上所述仅是对本发明的较佳实施例而已，并非对本发明作任何形式上的限制，凡是依据本发明的技术实质对以上实施例所做的任何简单修改，等同变化与修饰，均属于本发明技术方案的范围内。

Claims (9)

1.一种柔性砷化镓太阳电池支撑衬底，其特征在于，至少包括：双面胶带(2)和刚性支撑衬底(6)；其中：
所述双面胶带(2)位于柔性电池晶圆(1)和刚性支撑衬底(6)之间；所述双面胶带(2)包括：
胶带基体层(4)；
具有UV失粘或者热失粘特性的第一胶层(3)，所述第一胶层(3)位于柔性电池晶圆(1)和胶带基体层(4)之间；
不具有UV失粘或者热失粘特性的第二胶层(5)，所述第二胶层(5)位于胶带基体层(4)和刚性支撑衬底(6)之间。
2.根据权利要求1所述的柔性砷化镓太阳电池支撑衬底，其特征在于，所述柔性电池晶圆(1)为镀有金属层的晶圆。
3.根据权利要求1所述的柔性砷化镓太阳电池支撑衬底，其特征在于，所述第一胶层(3)和第二胶层(5)的胶层厚度均大于10μm。
4.根据权利要求1所述的柔性砷化镓太阳电池支撑衬底，其特征在于，所述第一胶层(3)在90℃下保持稳定，且热解温度不高于120℃。
5.根据权利要求1所述的柔性砷化镓太阳电池支撑衬底，其特征在于，所述第二胶层(5)在至少120℃下保持稳定。
6.根据权利要求1所述的柔性砷化镓太阳电池支撑衬底，其特征在于，刚性支撑衬底(6)的形状、尺寸与柔性电池晶圆(1)的形状、尺寸相同。
7.一种柔性砷化镓太阳电池支撑衬底的粘接工艺，其特征在于，包括如下步骤：
S1、晶圆预处理；具体为：
对晶圆进行清洁，然后在晶圆下表面镀20μm的柔性金属层；形成柔性电池晶圆(1)；
S2、在柔性电池晶圆(1)下表面粘接双面胶带；具体为：
在大气环境中，采用滚轮方式，将柔性电池晶圆(1)的金属层面与双面胶带(2)热失粘特性的第一胶层(3)粘接；
S3、粘接刚性支撑衬底(6)；具体为：
将所述S2阶段后的柔性电池晶圆外侧第二胶层(5)与刚性支撑衬底(6)在真空状态下对准、贴合；
S4、柔性电池晶圆(1)的再加工；具体为：
进行腐蚀、光刻加工流程，直至分离电池步骤；
S5、分离电池；具体为：
将所述柔性电池晶圆(1)放置在130℃的热盘上，加热约10min，柔性电池与支撑衬底完全解粘，取下柔性电池，完成电池分离。
8.一种柔性砷化镓太阳电池支撑衬底的粘接工艺，其特征在于，包括如下步骤：
S1、晶圆预处理；具体为：
对晶圆进行清洁，然后在晶圆下表面镀20μm的柔性金属层；形成柔性电池晶圆(1)；
S2、在刚性支撑衬底(6)上表面粘接双面胶带；具体为：
在大气环境下，采用滚轮将双面胶带(2)不具有热失粘特性的第二胶层(5)与刚性支撑衬底(6)粘接；
S3、粘接柔性电池晶圆(1)；具体为：
将S2阶段后的刚性支撑衬底外侧第一胶层(3)与所述柔性电池晶圆(1)在真空状态下对准、贴合；
S4、柔性电池晶圆(1)的再加工；具体为：
进行腐蚀、光刻加工流程，直至分离电池步骤；
S5、分离电池；具体为：
将所述柔性电池晶圆(1)放置在130℃的热盘上，加热约10min，柔性电池与支撑衬底完全解粘，取下柔性电池，完成电池分离。
9.根据权利要求7或8所述柔性砷化镓太阳电池支撑衬底的粘接工艺，其特征在于，所述柔性砷化镓太阳电池支撑衬底的粘接工艺均在真空状态下进行。
CN202111293702.XA 2021-11-03 2021-11-03 一种柔性砷化镓太阳电池支撑衬底及粘接工艺 Pending CN114050194A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111293702.XA CN114050194A (zh) 2021-11-03 2021-11-03 一种柔性砷化镓太阳电池支撑衬底及粘接工艺

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111293702.XA CN114050194A (zh) 2021-11-03 2021-11-03 一种柔性砷化镓太阳电池支撑衬底及粘接工艺

Publications (1)

Publication Number Publication Date
CN114050194A true CN114050194A (zh) 2022-02-15

Family

ID=80206997

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111293702.XA Pending CN114050194A (zh) 2021-11-03 2021-11-03 一种柔性砷化镓太阳电池支撑衬底及粘接工艺

Country Status (1)

Country Link
CN (1) CN114050194A (zh)

Similar Documents

Publication Publication Date Title
CN108598218B (zh) 一种外延层刚性-柔性衬底无机键合转移方法
CN109494182B (zh) 一种用于半导体集成工艺中超薄半导体晶圆的拿持方法
US20120142139A1 (en) Mounting of solar cells on a flexible substrate
JP2008166794A (ja) フレキシブル膜上に載置された反転メタモルフィックソーラーセル
WO2010051106A2 (en) Methods for attaching flexible substrates to rigid carriers and resulting devices
WO2012057125A1 (ja) 太陽電池モジュールの製造方法
CN108615700A (zh) 一种薄型太阳电池刚性-柔性衬底有机键合转移工艺方法
JP2013125971A (ja) 半導体装置の製造のための複合ウェハ
TWI552205B (zh) 用以形成薄層體之方法與裝置
SG178827A1 (en) Method for bonding of chips on wafers
US11222864B2 (en) Semiconductor wafer processing arrangement employing an adhesive sheet and method for processing a semiconductor wafer
CN111326467A (zh) 一种柔性无机半导体薄膜及其制备方法
CN114050194A (zh) 一种柔性砷化镓太阳电池支撑衬底及粘接工艺
CN102163542A (zh) 薄膜电子元件的单片化方法及由其制造的电子元件搭载粘着性薄片
CN111684579B (zh) 晶片保持台
CN105428215A (zh) 一种基于金属应力层及亲水剂处理的外延片整面剥离方法
CN102064092B (zh) 用于半导体工艺的载体分离方法
US20170287766A1 (en) Gripper for semiconductor devices
CN107644843B (zh) 晶圆堆叠制作方法
JP6937050B2 (ja) フレキシブル太陽電池の製造方法
JP2012015483A (ja) 太陽電池ストリングの製造装置および製造方法、配線材圧着装置および配線材圧着方法
WO2015006382A1 (en) Thin film solar cell lamination stack for high volume manufacturing
JP4245131B2 (ja) 薄膜太陽電池の製造方法
US20230051769A1 (en) Micro component structure and manufacturing method thereof, and transfer method for light-emitting diode chip
CN220710330U (zh) 一种背接触电池模组

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination