CN114038640A - Ultrahigh frequency radio frequency resistor and production method thereof - Google Patents
Ultrahigh frequency radio frequency resistor and production method thereof Download PDFInfo
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- CN114038640A CN114038640A CN202111110443.2A CN202111110443A CN114038640A CN 114038640 A CN114038640 A CN 114038640A CN 202111110443 A CN202111110443 A CN 202111110443A CN 114038640 A CN114038640 A CN 114038640A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/024—Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being hermetically sealed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/08—Cooling, heating or ventilating arrangements
- H01C1/084—Cooling, heating or ventilating arrangements using self-cooling, e.g. fins, heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/242—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
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- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses an ultrahigh frequency radio frequency resistor and a production method thereof, wherein a diamond substrate is used as a substrate material, a heat dissipation substrate is compounded to improve the heat dissipation efficiency, and meanwhile, the heat dissipation performance of the radio frequency resistor is further improved by using a special packaging material; meanwhile, the production method utilizes liquid nitrogen cooling to control the temperature rise of laser resistance adjustment, laser seamless welding and laser cutting splinting, and prevents the resistance value of the resistance layer of the radio frequency resistor from varying.
Description
Technical Field
The invention relates to the field of radio frequency resistors, in particular to an ultrahigh frequency radio frequency resistor and a production method thereof.
Background
The radio frequency resistor is an electronic component which utilizes high-frequency current to form high-frequency electromagnetic waves, and is a key element in the field of microwave communication.
Along with the continuous improvement of the working frequency, the radio frequency resistor has larger and larger reflection loss and more serious heating; in the prior art, the general substrate material of the radio frequency resistor is aluminum oxide or aluminum nitride, but due to insufficient thermal conductivity, unstable effects of correspondingly different frequencies under different temperature rises can occur in the process of high-power load.
In the prior art, in order to solve the problem of insufficient thermal conductivity of a substrate material, CN210606834U "a CVD diamond matrix chip resistor" discloses a radio frequency resistor using a diamond substrate as a substrate material. But the production process and the packaging material are not disclosed.
Disclosure of Invention
The invention discloses an ultrahigh frequency radio frequency resistor and a production method thereof, wherein a diamond substrate is used as a substrate material, a heat dissipation substrate is compounded to improve the heat dissipation efficiency, and meanwhile, the heat dissipation performance of the radio frequency resistor is further improved by using a special packaging material; meanwhile, the production method utilizes liquid nitrogen cooling to control the temperature rise of laser resistance adjustment, laser seamless welding and laser cutting splinting, and prevents the resistance value of the resistance layer of the radio frequency resistor from varying.
The ultrahigh frequency radio frequency resistor comprises a heat dissipation substrate 1, a diamond substrate 2, a tantalum nitride resistance layer 3, a packaging layer 4 and a lead-out pin piece 5.
Further, the heat dissipation substrate 1 is a gold-plated copper plate.
The production method of the ultrahigh frequency radio frequency resistor comprises the following steps:
(1) pressing tantalum nitride metal foil on a diamond plate with specified dimension and specification under the vacuum condition of less than or equal to 10mbar at high temperature;
(2) adjusting the resistance value of the diamond plate prepared in the step (1) by laser cutting in a photoetching process in a liquid nitrogen cooling environment according to requirements, and cutting a lobe positioning groove;
(3) after the resistance value is adjusted, continuously welding the tantalum nitride resistance layer and the lead-out pin piece in a laser seamless welding mode in a liquid nitrogen cooling environment;
(4) after the laser seamless welding is finished, packaging with a packaging material at room temperature, and heating and curing to form a packaging layer;
(5) and (4) after the encapsulation is finished, continuing to position according to the splinter positioning grooves cut in the step (2) in a liquid nitrogen cooling environment, performing laser cutting again, and cutting the diamond plate into single ultrahigh frequency radio frequency resistors.
The packaging material is high-temperature insulating sealing silica gel, and the packaging material is a two-component organic silicon sealant with the mass ratio of Sinwe 9210A to Sinwe 9210B being 10:1, and the curing condition is that the temperature is heated to 100-120 ℃, and the curing time is 6-8 h.
Further, 40-50% by mass of modified filler is added into the packaging material, and the preparation method of the modified filler comprises the following steps:
(1) taking nano silicon carbide with a certain mass and a particle size of 20 nm-50 nm, dispersing the nano silicon carbide in 95% ethanol with a mass multiple of 5-8 times, adding nano aluminum oxide with a particle size of 20 nm-50 nm and a mass multiple of 2-3 times of the nano silicon carbide, and fully dispersing;
(2) adding a silane coupling agent DL602 with the mass of 2-3% of the nano silicon carbide, fully stirring until the system becomes thick, then adding organic polyborosilazane IOTA-9120 with the mass of 0.3-0.5 times of the nano silicon carbide, and fully dispersing;
(3) and (3) desolventizing and curing the mixed solution prepared in the step (2) at 80-100 ℃ in a spray drying manner in an air atmosphere to prepare the modified filler.
Further, the modified filler is pre-dispersed in component Sinwe 9210A.
The invention has the advantages that:
1. the diamond substrate is used as a substrate material, the heat dissipation efficiency is improved by compounding the heat dissipation substrate, and the heat dissipation performance of the radio frequency resistor is further improved by using a special packaging material;
2. because the temperature coefficient of the tantalum nitride is larger, the production method of the invention utilizes liquid nitrogen cooling to control the temperature rise of laser resistance adjustment, laser seamless welding and laser cutting splinters, and prevents the resistance value variation of the resistance layer of the radio frequency resistor;
3. according to the invention, the heat-conducting property of the packaging material is improved by using the nano silicon carbide, but as the silicon carbide is a semiconductor material and is in contact with the tantalum nitride resistance layer, the resistance value is easily influenced and interference is formed during high-frequency work, the nano silicon carbide and the tantalum nitride resistance layer are effectively isolated through 2 layers of sealing (the surfaces of nano silicon carbide particles coupled with nano alumina and coupled particles are sealed by organic poly boron-silicon nitrogen alkane in a ceramic manner), and meanwhile, the heat-radiating property of the packaging layer and the bonding strength of the packaging layer and the diamond substrate are greatly improved.
Drawings
FIG. 1 is a top view of an UHF RF resistor according to the present invention;
FIG. 2 is a front view of the UHF RF resistor of the present invention;
FIG. 3 is a cross-sectional view of the UHF RF resistor of the present invention;
in the figure, 1-heat dissipation substrate, 2-diamond substrate, 3-tantalum nitride resistance layer, 4-packaging layer and 5-pin piece
Detailed Description
Example 1
An ultrahigh frequency radio frequency resistor comprises a heat dissipation substrate 1, a diamond substrate 2, a tantalum nitride resistance layer 3, a packaging layer 4 and a lead-out pin 5; the heat dissipation substrate 1 is a gold-plated copper plate.
The production method of the ultrahigh frequency radio frequency resistor comprises the following steps:
(1) pressing tantalum nitride metal foil on a diamond plate with specified dimension and specification under the vacuum condition of 1mbar at high temperature;
(2) adjusting the resistance value of the diamond plate prepared in the step (1) by laser cutting in a photoetching process in a liquid nitrogen cooling environment according to requirements, and cutting a lobe positioning groove;
(3) after the resistance value is adjusted, continuously welding the tantalum nitride resistance layer and the lead-out pin piece in a laser seamless welding mode in a liquid nitrogen cooling environment;
(4) after the laser seamless welding is finished, packaging with a packaging material at room temperature, and heating and curing to form a packaging layer;
(5) and (4) after the encapsulation is finished, continuing to position according to the splinter positioning grooves cut in the step (2) in a liquid nitrogen cooling environment, performing laser cutting again, and cutting the diamond plate into single ultrahigh frequency radio frequency resistors.
The packaging material comprises a two-component organosilicon sealant with the mass ratio of Sinwe 9210A to Sinwe 9210B being 10:1, and a modified filler accounting for 40% of the mass of the two-component organosilicon sealant, wherein the modified filler is pre-dispersed in the component Sinwe 9210A.
The curing conditions were heating to 120 ℃ for 6 h.
The preparation method of the modified filler comprises the following steps:
(1) taking nano silicon carbide with the particle size of 50nm according to a certain mass, dispersing the nano silicon carbide in 95% ethanol with the mass multiple of 5 times, then adding nano aluminum oxide with the particle size of 50nm, wherein the mass of the nano aluminum oxide is 3 times that of the nano silicon carbide, and fully dispersing;
(2) adding a silane coupling agent DL602 with the mass of 3% of the nano silicon carbide, fully stirring until the system becomes thick, then adding organic polyborosilazane IOTA-9120 with the mass of 0.3 time of the nano silicon carbide, and fully dispersing;
(3) and (3) desolventizing and curing the mixed solution prepared in the step (2) at 80 ℃ in an air atmosphere in a spray drying mode to prepare the modified filler.
Example 2
An ultrahigh frequency radio frequency resistor comprises a heat dissipation substrate 1, a diamond substrate 2, a tantalum nitride resistance layer 3, a packaging layer 4 and a lead-out pin 5; the heat dissipation substrate 1 is a gold-plated copper plate.
The production method of the ultrahigh frequency radio frequency resistor comprises the following steps:
(1) pressing tantalum nitride metal foil on a diamond plate with specified dimension and specification under the vacuum condition of 3mbar at high temperature;
(2) adjusting the resistance value of the diamond plate prepared in the step (1) by laser cutting in a photoetching process in a liquid nitrogen cooling environment according to requirements, and cutting a lobe positioning groove;
(3) after the resistance value is adjusted, continuously welding the tantalum nitride resistance layer and the lead-out pin piece in a laser seamless welding mode in a liquid nitrogen cooling environment;
(4) after the laser seamless welding is finished, packaging with a packaging material at room temperature, and heating and curing to form a packaging layer;
(5) and (4) after the encapsulation is finished, continuing to position according to the splinter positioning grooves cut in the step (2) in a liquid nitrogen cooling environment, performing laser cutting again, and cutting the diamond plate into single ultrahigh frequency radio frequency resistors.
The packaging material comprises a two-component organosilicon sealant with the mass ratio of Sinwe 9210A to Sinwe 9210B being 10:1, and a modified filler accounting for 45% of the mass of the two-component organosilicon sealant, wherein the modified filler is pre-dispersed in the component Sinwe 9210A.
The curing conditions were heating to 110 ℃ and curing time 8 h.
The preparation method of the modified filler comprises the following steps:
(1) taking nano silicon carbide with a certain mass and a particle size of 30nm, dispersing the nano silicon carbide in 95% ethanol with a mass multiple of 6 times, then adding nano aluminum oxide with a particle size of 30nm and a mass multiple of 2.2 times of the nano silicon carbide, and fully dispersing;
(2) adding a silane coupling agent DL602 with the mass of 2.5 percent of the nano silicon carbide, fully stirring until the system becomes thick, then adding organic polyborosilazane IOTA-9120 with the mass of 0.4 time of the nano silicon carbide, and fully dispersing;
(3) and (3) desolventizing and curing the mixed solution prepared in the step (2) at 100 ℃ in an air atmosphere in a spray drying mode to prepare the modified filler.
Example 3
An ultrahigh frequency radio frequency resistor comprises a heat dissipation substrate 1, a diamond substrate 2, a tantalum nitride resistance layer 3, a packaging layer 4 and a lead-out pin 5; the heat dissipation substrate 1 is a gold-plated copper plate.
The production method of the ultrahigh frequency radio frequency resistor comprises the following steps:
(1) pressing tantalum nitride metal foil on a diamond plate with specified dimension and specification under the vacuum condition of 10mbar at high temperature;
(2) adjusting the resistance value of the diamond plate prepared in the step (1) by laser cutting in a photoetching process in a liquid nitrogen cooling environment according to requirements, and cutting a lobe positioning groove;
(3) after the resistance value is adjusted, continuously welding the tantalum nitride resistance layer and the lead-out pin piece in a laser seamless welding mode in a liquid nitrogen cooling environment;
(4) after the laser seamless welding is finished, packaging with a packaging material at room temperature, and heating and curing to form a packaging layer;
(5) and (4) after the encapsulation is finished, continuing to position according to the splinter positioning grooves cut in the step (2) in a liquid nitrogen cooling environment, performing laser cutting again, and cutting the diamond plate into single ultrahigh frequency radio frequency resistors.
The packaging material comprises a two-component organosilicon sealant with the mass ratio of Sinwe 9210A to Sinwe 9210B being 10:1, and a modified filler accounting for 50% of the mass of the two-component organosilicon sealant, wherein the modified filler is pre-dispersed in the component Sinwe 9210A.
The curing conditions were heating to 100 ℃ for 8 h.
The preparation method of the modified filler comprises the following steps:
(1) taking nano silicon carbide with the particle size of 20nm in a certain mass, dispersing the nano silicon carbide in 95% ethanol with the mass multiple of 8 times, then adding nano aluminum oxide with the particle size of 20nm, with the mass of 2 times that of the nano silicon carbide, and fully dispersing;
(2) adding a silane coupling agent DL602 with the mass of 2% of the nano silicon carbide, fully stirring until the system becomes thick, then adding organic polyborosilazane IOTA-9120 with the mass of 0.5 time of the nano silicon carbide, and fully dispersing;
(3) and (3) desolventizing and curing the mixed solution prepared in the step (2) at 100 ℃ in an air atmosphere in a spray drying mode to prepare the modified filler.
Comparative example 1
A radio frequency resistor is not compounded with a heat dissipation substrate, and the other production methods are the same as embodiment 2.
Comparative example 2
A radio frequency resistor, wherein the encapsulation material is not added with a modified filler, and the rest of the production method is the same as that of example 2.
Comparative example 3
The radio frequency resistor has nanometer silicon carbide as stuffing and the same production process as in example 2.
Comparative example 4
The radio frequency resistor has nanometer alumina as stuffing and the same production process as in example 2.
Comparative example 5
The radio frequency resistor is produced by using KH792 as silane coupling agent and through the same process as that of example 2.
Comparative example 6
The radio-frequency resistor is characterized in that the organic polyborosilazane is not added into the modified filler, and the rest of the production method is the same as that of the example 2.
And (3) performance detection:
the radio frequency resistors were produced according to the production methods described in the above examples and comparative examples, the sizes of the diamond substrates used for the radio frequency resistors were unified to 1.6mm by 0.8mm by 0.38mm, and the sizes of the heat dissipation substrates were 3.2mm by 1.0mm, so that the radio frequency resistors were continuously operated for 4 hours under the conditions of the power of 50W and the operating frequency of 30GHz, and the temperature and standing wave ratio at which the radio frequency resistors stably operated were measured, and the test results are shown in table 1;
the radio frequency resistors produced in the above embodiments and comparative examples continuously increase the working frequency in a stable working state, and the cut-off frequency of the radio frequency resistor is tested, and the test results are shown in table 1;
the peel strength, thermal conductivity and elongation at break of the diamond substrate and the encapsulating materials used in the above examples and comparative examples were measured, and 5 sets of average values were measured; and continuously working for 72h under the conditions of 50W of power and 30GHz of working frequency, and then testing the same as the above again, wherein the test results are shown in Table 2.
TABLE 1
TABLE 2
As can be seen from the above table, the diamond substrate is used as the substrate material, and the composite heat dissipation substrate can further improve the heat dissipation performance of the radio frequency resistor; the modified filler can effectively improve the heat-conducting property of the packaging material and can prevent the silicon carbide from influencing the electrical property of the ultrahigh-frequency radio-frequency resistor; and the modified filler is beneficial to improving the performance stability of the packaging material and can effectively relieve the aging speed of the packaging material.
And finally: the above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that are within the spirit and principle of the present invention are intended to be included in the scope of the present invention.
Claims (8)
1. An ultra high frequency radio frequency resistor, comprising: the ultrahigh frequency radio frequency resistor comprises a heat dissipation substrate, a diamond substrate, a tantalum nitride resistance layer, a packaging layer and a lead-out pin sheet.
2. The uhf radio frequency resistor of claim 1, wherein: the heat dissipation substrate is a gold-plated copper plate.
3. The method for producing an uhf radio frequency resistor as claimed in claim 1, wherein: the production method comprises the following steps:
(1) pressing tantalum nitride metal foil on a diamond plate with specified dimension and specification under the vacuum condition of less than or equal to 10mbar at high temperature;
(2) adjusting the resistance value of the diamond plate prepared in the step (1) by laser cutting in a photoetching process in a liquid nitrogen cooling environment according to requirements, and cutting a lobe positioning groove;
(3) after the resistance value is adjusted, continuously welding the tantalum nitride resistance layer and the lead-out pin piece in a laser seamless welding mode in a liquid nitrogen cooling environment;
(4) after the laser seamless welding is finished, packaging with a packaging material at room temperature, and heating and curing to form a packaging layer;
(5) and (4) after the encapsulation is finished, continuing to position according to the splinter positioning grooves cut in the step (2) in a liquid nitrogen cooling environment, performing laser cutting again, and cutting the diamond plate into single ultrahigh frequency radio frequency resistors.
4. The production method according to claim 3, wherein: the packaging material is high-temperature insulating sealing silica gel, and the packaging material is a two-component organosilicon sealant with the mass ratio of Sinwe 9210A to Sinwe 9210B being 10: 1.
5. The production method according to claim 4, wherein: the curing condition of the packaging material is heating to 100-120 ℃, and the curing time is 6-8 h.
6. The production method according to claim 4, wherein: the packaging material is added with 40-50% of modified filler by mass.
7. The production method according to claim 6, wherein: the preparation method of the modified filler comprises the following steps:
(1) taking nano silicon carbide with a certain mass and a particle size of 20 nm-50 nm, dispersing the nano silicon carbide in 95% ethanol with a mass multiple of 5-8 times, adding nano aluminum oxide with a particle size of 20 nm-50 nm and a mass multiple of 2-3 times of the nano silicon carbide, and fully dispersing;
(2) adding a silane coupling agent DL602 with the mass of 2-3% of the nano silicon carbide, fully stirring until the system becomes thick, then adding organic polyborosilazane IOTA-9120 with the mass of 0.3-0.5 times of the nano silicon carbide, and fully dispersing;
(3) and (3) desolventizing and curing the mixed solution prepared in the step (2) at 80-100 ℃ in a spray drying manner in an air atmosphere to prepare the modified filler.
8. The production method according to claim 6 or 7, characterized in that: the modified filler is pre-dispersed in component Sinwe 9210A.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59218712A (en) * | 1983-05-27 | 1984-12-10 | Toshiba Corp | Protective circuit for superconductive coil |
| US5066938A (en) * | 1989-10-16 | 1991-11-19 | Kabushiki Kaisha Kobe Seiko Sho | Diamond film thermistor |
| JPH03283601A (en) * | 1990-03-30 | 1991-12-13 | Kanagawa Pref Gov | Thin diamond film temperature sensor |
| JPH05175001A (en) * | 1991-12-24 | 1993-07-13 | Tokyo Denpa Kk | High frequency resistor |
| KR970706357A (en) * | 1995-07-13 | 1997-11-03 | 다마호리 다메히꼬 | COMPOSITION FOR FORMING CERAMIC SUBSTANCES AND PROCESS FOR PRODUCING CERAMIC SUBSTANCES |
| EP0834489A1 (en) * | 1996-10-04 | 1998-04-08 | Dow Corning Corporation | Thick opaque ceramic coatings |
| US20050224806A1 (en) * | 2002-05-07 | 2005-10-13 | Peter Gluche | Electrically resistant diamond-based component |
| CN209249223U (en) * | 2018-12-29 | 2019-08-13 | 上海华湘计算机通讯工程有限公司 | A kind of high-power diamond resistance |
-
2021
- 2021-09-18 CN CN202111110443.2A patent/CN114038640B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59218712A (en) * | 1983-05-27 | 1984-12-10 | Toshiba Corp | Protective circuit for superconductive coil |
| US5066938A (en) * | 1989-10-16 | 1991-11-19 | Kabushiki Kaisha Kobe Seiko Sho | Diamond film thermistor |
| JPH03283601A (en) * | 1990-03-30 | 1991-12-13 | Kanagawa Pref Gov | Thin diamond film temperature sensor |
| JPH05175001A (en) * | 1991-12-24 | 1993-07-13 | Tokyo Denpa Kk | High frequency resistor |
| KR970706357A (en) * | 1995-07-13 | 1997-11-03 | 다마호리 다메히꼬 | COMPOSITION FOR FORMING CERAMIC SUBSTANCES AND PROCESS FOR PRODUCING CERAMIC SUBSTANCES |
| EP0834489A1 (en) * | 1996-10-04 | 1998-04-08 | Dow Corning Corporation | Thick opaque ceramic coatings |
| US20050224806A1 (en) * | 2002-05-07 | 2005-10-13 | Peter Gluche | Electrically resistant diamond-based component |
| CN209249223U (en) * | 2018-12-29 | 2019-08-13 | 上海华湘计算机通讯工程有限公司 | A kind of high-power diamond resistance |
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