CN105390474A - High-thermal-conductivity and low-expansion conductive pattern board and preparation method therefor - Google Patents
High-thermal-conductivity and low-expansion conductive pattern board and preparation method therefor Download PDFInfo
- Publication number
- CN105390474A CN105390474A CN201510903214.4A CN201510903214A CN105390474A CN 105390474 A CN105390474 A CN 105390474A CN 201510903214 A CN201510903214 A CN 201510903214A CN 105390474 A CN105390474 A CN 105390474A
- Authority
- CN
- China
- Prior art keywords
- thermal
- conductive pattern
- composite material
- conductivity
- expansibility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000002131 composite material Substances 0.000 claims abstract description 40
- 238000000151 deposition Methods 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 19
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000005516 engineering process Methods 0.000 claims abstract description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 10
- 238000009413 insulation Methods 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 3
- 238000003466 welding Methods 0.000 claims abstract description 3
- 239000010949 copper Substances 0.000 claims description 34
- 229910003460 diamond Inorganic materials 0.000 claims description 34
- 239000010432 diamond Substances 0.000 claims description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 31
- 229910052802 copper Inorganic materials 0.000 claims description 30
- 230000008021 deposition Effects 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 230000007704 transition Effects 0.000 claims description 14
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 12
- 239000004917 carbon fiber Substances 0.000 claims description 12
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 12
- 239000004411 aluminium Substances 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 230000002787 reinforcement Effects 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 238000009715 pressure infiltration Methods 0.000 claims description 6
- 238000003672 processing method Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000000835 fiber Substances 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 229910003465 moissanite Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 238000004663 powder metallurgy Methods 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000005728 strengthening Methods 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 13
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000005240 physical vapour deposition Methods 0.000 abstract 2
- 238000004026 adhesive bonding Methods 0.000 abstract 1
- 238000004100 electronic packaging Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention belongs to the technical field of electronic packaging and particularly relates to a high-thermal-conductivity and low-expansion conductive pattern board and a preparation method therefor. The preparation method comprises: by taking a high-thermal-conductivity and low-expansion composite material as a base material, preparing a high-thermal-conductivity insulation medium layer on single or both surfaces of the base material with a physical or chemical method of welding, gluing, chemical vapor deposition, magnetron sputtering or physical vapor deposition; and finally depositing a conductor circuit pattern layer on the insulation medium layer with a chemical vapor deposition technology, a magnetron sputtering technology, a physical vapor deposition technology or an etching method so as to obtain the lamellar high-thermal-conductivity and low-expansion conductive pattern board. The conductive pattern board has the properties of high breakdown strength, high dielectric constant and the like in addition to high thermal conductivity, low expansion coefficient, high strength and high size stability; and a conductor circuit pattern is directly formed on a substrate, so that a preparation process for the conductor circuit pattern layer is simplified.
Description
Technical field
The invention belongs to technical field of electronic encapsulation, particularly a kind of high-thermal-conductivity low-expansibility conductive pattern plate and preparation method thereof.
Background technology
Along with the develop rapidly of electronics and information industry, the volume size of electronic product is more and more less, and power density is increasing, and solving heat dissipation problem is to one of electronics industry design huge challenge.Metal substrate is with the heat dispersion of its excellence, machining property, capability of electromagnetic shielding, dimensional stability, magnetic force performance and multifunctional performance, in fields such as hybrid integrated circuit, automobile, motorcycle, office automation, high-power electric appliance equipment, power-supply devices, obtain increasing application, be particularly widely used as substrate in LED product.Traditional metal substrate is for base material with metallic plate (aluminium, copper, iron etc.), base material is covered with insulating medium layer and conductive layer (Copper Foil), wherein copper base has higher thermal diffusivity, thermal conductivity is 398W/mK, but also exists that thermal coefficient of expansion is large, weight is large, be difficult to carry out the shortcomings such as the anti-oxidation process of end face.The density of aluminium base is little, and thermal conductivity is 237W/mK, but there is the large problem of thermal coefficient of expansion equally, and made printed circuit board (PCB), on the position being equipped with switch element and power supply, power amplifier element, during work, noise occurs.Iron substrate has the electromagnetic property not available for other metal substrate, and has good stability of the dimension, advantage that price is low, but it exists weight is large, corrosion-resistant, heat-conductive characteristic is poor problem.Traditional metal substrate can not meet the demand of high-power electronic device development, therefore needs to develop to have the more high performance substrates such as thermal conductivity is high, thermal coefficient of expansion is low, lightweight.
Summary of the invention
Not enough for prior art, the invention provides a kind of high-thermal-conductivity low-expansibility conductive pattern plate and preparation method thereof.
A kind of high-thermal-conductivity low-expansibility conductive pattern plate, it take composite material as base material, and the single or double of base material is insulating medium layer, and insulating medium layer surface is conductor circuit layer; Described composite material is the metal-base composites that reinforcement strengthens, and described reinforcement is for strengthening particle and/or fiber; Described insulating medium layer is ceramic material; Described conductor circuit layer is metal material.
In described composite material, the volume fraction of reinforcement is 25% ~ 80%.
In described composite material, reinforcement is one or both in diamond, SiC and carbon fiber, and metal is copper, aluminium or silver.
Described composite material is diamond/copper, carbon fiber/copper, diamond mix SiC Particles/Cu, carbon fiber hybrid SiC Particles/Cu, diamond/aluminum, SiC/ aluminium, diamond mix SiC particle/aluminium, carbon fiber hybrid SiC particle/aluminium, diamond/silver, SiC/ are silver-colored, diamond mixes SiC particle/silver, carbon fiber/Ag or carbon fiber hybrid SiC particle/silver.
Described insulating medium layer is Al
2o
3, BeO, BN, Si
3n
4, SiC or AlN.
The material of described conductor circuit layer adopts copper.
The thickness of described composite material is 0.4 ~ 10mm, and the thickness of insulating medium layer is 1 μm ~ 1.5mm, and the thickness of conductor circuit layer is 1 ~ 500 μm.
Described a kind of high-thermal-conductivity low-expansibility conductive pattern plate, its room temperature thermal conductivity is 350 ~ 600W/mK, and thermal coefficient of expansion is 4 × 10
-6/ K ~ 9 × 10
-6/ K, dielectric constant is 4.5 ~ 9, and dielectric loss Tan δ is 3 × 10
-4~ 5 × 10
-4(1MHz), specific insulation (25 DEG C) is 10
12more than Ω cm, puncture voltage is 3 ~ 10kV.
A preparation method for high-thermal-conductivity low-expansibility conductive pattern plate, comprises the following steps:
1) method of Pressure Infiltration, powder metallurgy or XPS is adopted to prepare composite material base; Generally speaking, the shape of composite sample does not set, and is not limited to any thickness;
2) composite material base roughly ground, refine, rough polishing, essence throw;
3) adopt chemical vapour deposition technique, magnetron sputtering technique or physical gas phase deposition technology depositing Ti, Cr, Mo, Zr, W, V or Nb transition zone on composite material base, thickness is 100nm ~ 1 μm;
4) welding, splicing, chemical vapour deposition (CVD), magnetron sputtering or physical gas phase deposition technology is adopted to prepare insulating medium layer at the single or double of composite material;
5) adopt laser processing method to prepare circuit mask plate, thickness is 0.1 ~ 0.5mm;
6) adopt chemical vapour deposition technique, magnetron sputtering technique, physical gas phase deposition technology or etching method on insulating medium layer, prepare mask conductor circuit layer.
Beneficial effect of the present invention is: the present invention is using high-thermal-conductivity low-expansibility compound material as base material, high heat conductive insulating dielectric layer is prepared at the single or double of base material, finally deposited conductor circuit layer on insulating medium layer, thus obtain stratiform high-thermal-conductivity low-expansibility conductive pattern plate, this conductive pattern plate is except having high heat conduction, low thermal coefficient of expansion, high strength, good dimensional stability, also there is the character such as high breakdown strength, high-k, and on substrate, directly form conductor circuit pattern, simplify the preparation technology of conductor circuit layer.High-thermal-conductivity low-expansibility conductive pattern plate in the present invention solves the problem that existing baseplate material thermal conductivity is low, thermal coefficient of expansion is large, density is large, be applicable to IGBT (insulatedgatebipolartransistor, insulated gate bipolar transistor) substrate or CPV (concentratingphotovoltaic, condensation photovoltaic) solar energy, integrated circuit (IC) substrate, microwave high power device heat-radiating substrate, multi-chip assembling (MCM) substrate etc.
Embodiment
Below in conjunction with embodiment, the present invention will be further described.It is emphasized that following explanation is only exemplary, instead of in order to limit the scope of the invention and apply.
Embodiment 1
1) adopt pressure infiltration method to prepare diamond/copper composite material base, the volume fraction of diamond particles is 60%, and heating-up temperature is 1200 DEG C, and temperature retention time is 10min, and applying pressure is 10MPa, is processed into the cuboid of 30mm × 40mm × 3mm;
2) diamond/copper composite material base roughly ground, refine, rough polishing, essence throw;
3) adopt magnetron sputtering technique depositing Ti transition zone on diamond/copper composite material base, voltage is 350V, and electric current is 100mA, and deposition pressure is 1.0Pa, and deposition rate is 2 dusts/second, and transition region thickness is 100nm;
4) magnetron sputtering technique depositing Al N insulating medium layer on the diamond/copper composite material base that deposited Ti transition zone is adopted, voltage is 350V, and electric current is 100mA, and deposition pressure is 1.0Pa, deposition rate is 2 dusts/second, and the thickness of insulating medium layer is 3 μm;
5) adopt laser processing to prepare circuit mask plate, circuit mask plate thickness is 0.2mm;
6) adopt magnetron sputtering technique on AlN insulating medium layer, prepare mask copper circuit layer, voltage is 350V, and electric current is 100mA, and deposition pressure is 1.0Pa, and deposition rate is 2 dusts/second, and copper circuit figure layer thickness is 1 μm.
The high-thermal-conductivity low-expansibility conductive pattern plate prepared, its room temperature thermal conductivity is 530W/mK, thermal coefficient of expansion is 6.4 × 10
-6/ K, dielectric constant are 8.5, dielectric loss Tan δ is 5 × 10
-4(1MHz), specific insulation (25 DEG C)>=10
12Ω cm, puncture voltage is 3kV.
Embodiment 2
1) adopt pressure infiltration method to prepare diamond/copper composite material base, the volume fraction of diamond particles is 65%, and heating-up temperature is 1200 DEG C, and temperature retention time is 10min, and applying pressure is 10MPa, is processed into the cuboid of 40mm × 50mm × 3mm;
2) diamond/copper composite material base roughly ground, refine, rough polishing, essence throw;
3) adopt magnetron sputtering technique depositing Ti transition zone on diamond/copper composite material base, voltage is 350V, and electric current is 100mA, and deposition pressure is 1.0Pa, and deposition rate is 2 dusts/second, and transition region thickness is 200nm;
4) magnetron sputtering technique depositing Al N insulating medium layer on the diamond/copper composite material base that deposited Ti transition zone is adopted, voltage is 350V, and electric current is 100mA, and deposition pressure is 1.0Pa, deposition rate is 2 dusts/second, and the thickness of insulating medium layer is 4 μm;
5) adopt laser processing method to prepare circuit mask plate, circuit mask plate thickness is 0.1mm;
6) adopt magnetically controlled sputter method on AlN insulating medium layer, prepare mask copper circuit layer, copper circuit figure layer thickness is 1.5 μm.
The high-thermal-conductivity low-expansibility conductive pattern plate prepared, its room temperature thermal conductivity is 505W/mK, thermal coefficient of expansion is 6.8 × 10
-6/ K, dielectric constant are 8.8, dielectric loss Tan δ is 4.8 × 10
-4(1MHz), specific insulation (25 DEG C)>=10
12Ω cm, puncture voltage is 3.6kV.
Embodiment 3
1) adopt pressure infiltration method to prepare diamond/aluminum composite material base, the volume fraction of diamond particles is 60%, and heating-up temperature is 920 DEG C, and temperature retention time is 15min, and applying pressure is 10MPa, is processed into the cuboid of 35mm × 45mm × 3mm;
2) diamond/aluminum composite material base roughly ground, refine, rough polishing, essence throw;
3) adopt magnetron sputtering technique depositing Ti transition zone on diamond/aluminum composite material base, voltage is 350V, and electric current is 100mA, and deposition pressure is 1.0Pa, and deposition rate is 2 dusts/second, and transition region thickness is 150nm;
4) magnetron sputtering technique is adopted to deposit BN insulating medium layer on the diamond/aluminum composite material base that deposited Ti transition zone, voltage is 350V, and electric current is 100mA, and deposition pressure is 1.0Pa, deposition rate is 2 dusts/second, and the thickness of insulating medium layer is 3 μm;
5) adopt laser processing method to prepare circuit mask plate, circuit mask plate thickness is 0.1mm;
6) adopt magnetron sputtering technique on AlN insulating medium layer, prepare mask copper circuit layer, voltage is 350V, and electric current is 100mA, and deposition pressure is 1.0Pa, and deposition rate is 2 dusts/second, and copper circuit figure layer thickness is 1.5 μm.
The high-thermal-conductivity low-expansibility conductive pattern plate prepared, its room temperature thermal conductivity is 375W/mK, thermal coefficient of expansion is 8.4 × 10
-6/ K, dielectric constant are 4.5, dielectric loss Tan δ is 5 × 10
-4(1MHz), specific insulation (25 DEG C)>=10
12Ω cm, puncture voltage is 4kV.
Embodiment 4
1) adopt Pressure Infiltration method to prepare diamond/copper composite material base, the volume fraction of diamond particles is 60%, and heating-up temperature is 1200 DEG C, and temperature retention time is 10min, and applying pressure is 10MPa, is processed into the cuboid of 40mm × 50mm × 3mm;
2) diamond/copper composite sample roughly ground, refine, rough polishing, essence throw;
3) adopt magnetron sputtering technique depositing Ti transition zone on diamond/copper composite sample, voltage is 350V, and electric current is 100mA, and deposition pressure is 1.0Pa, and deposition rate is 2 dusts/second, and transition region thickness is 250nm;
4) magnetron sputtering technique is adopted to replace depositing Al N insulating medium layer and BN insulating medium layer on the diamond/copper composite sample that deposited Ti transition zone, voltage is 350V, electric current is 100mA, deposition pressure is 1.0Pa, deposition rate is 2 dusts/second, and the gross thickness of insulating medium layer is 10 μm;
5) adopt laser processing method to prepare circuit mask plate, circuit mask plate thickness is 0.3mm;
6) adopt magnetron sputtering technique on AlN insulating medium layer, prepare mask copper circuit layer, voltage is 350V, and electric current is 100mA, and deposition pressure is 1.0Pa, and deposition rate is 2 dusts/second, and copper circuit figure layer thickness is 1 μm.
The high-thermal-conductivity low-expansibility conductive pattern plate prepared, its room temperature thermal conductivity is 508W/mK, thermal coefficient of expansion is 6.1 × 10
-6/ K, dielectric constant are 6.0, dielectric loss Tan δ is 3 × 10
-4(1MHz), specific insulation (25 DEG C)>=10
12Ω cm, puncture voltage is 10kV.
Claims (9)
1. a high-thermal-conductivity low-expansibility conductive pattern plate, is characterized in that, it take composite material as base material, and the single or double of base material is insulating medium layer, and insulating medium layer surface is conductor circuit layer; Described composite material is the metal-base composites that reinforcement strengthens, and described reinforcement is for strengthening particle and/or fiber; Described insulating medium layer is ceramic material; Described conductor circuit layer is metal material.
2. a kind of high-thermal-conductivity low-expansibility conductive pattern plate according to claim 1, it is characterized in that, in described composite material, the volume fraction of reinforcement is 25% ~ 80%.
3. a kind of high-thermal-conductivity low-expansibility conductive pattern plate according to claim 1 or 2, is characterized in that, in described composite material, reinforcement is one or both in diamond, SiC and carbon fiber, and metal is copper, aluminium or silver.
4. a kind of high-thermal-conductivity low-expansibility conductive pattern plate according to claim 3, it is characterized in that, described composite material is diamond/copper, carbon fiber/copper, diamond mix SiC Particles/Cu, carbon fiber hybrid SiC Particles/Cu, diamond/aluminum, SiC/ aluminium, diamond mix SiC particle/aluminium, carbon fiber hybrid SiC particle/aluminium, diamond/silver, SiC/ are silver-colored, diamond mixes SiC particle/silver, carbon fiber/Ag or carbon fiber hybrid SiC particle/silver.
5. a kind of high-thermal-conductivity low-expansibility conductive pattern plate according to claim 1, it is characterized in that, described insulating medium layer is Al
2o
3, BeO, BN, Si
3n
4, SiC or AlN.
6. a kind of high-thermal-conductivity low-expansibility conductive pattern plate according to claim 1, is characterized in that, the material of described conductor circuit layer adopts copper.
7. a kind of high-thermal-conductivity low-expansibility conductive pattern plate according to claim 1, it is characterized in that, the thickness of described composite material is 0.4 ~ 10mm, and the thickness of insulating medium layer is 1 μm ~ 1.5mm, and the thickness of conductor circuit layer is 1 ~ 500 μm.
8. a kind of high-thermal-conductivity low-expansibility conductive pattern plate according to claim 1, it is characterized in that, its room temperature thermal conductivity is 350 ~ 600W/mK, and thermal coefficient of expansion is 4 × 10
-6/ K ~ 9 × 10
-6/ K, dielectric constant is 4.5 ~ 9, and dielectric loss Tan δ is 3 × 10
-4~ 5 × 10
-4(1MHz), specific insulation (25 DEG C) is 10
12more than Ω cm, puncture voltage is 3 ~ 10kV.
9. a preparation method for high-thermal-conductivity low-expansibility conductive pattern plate, is characterized in that, comprises the following steps:
1) method of Pressure Infiltration, powder metallurgy or XPS is adopted to prepare composite material base;
2) composite material base roughly ground, refine, rough polishing, essence throw;
3) adopt chemical vapour deposition technique, magnetron sputtering technique or physical gas phase deposition technology depositing Ti, Cr, Mo, Zr, W, V or Nb transition zone on composite material base, thickness is 100nm ~ 1 μm;
4) welding, splicing, chemical vapour deposition (CVD), magnetron sputtering or physical gas phase deposition technology is adopted to prepare insulating medium layer at the single or double of composite material;
5) adopt laser processing method to prepare circuit mask plate, thickness is 0.1 ~ 0.5mm;
6) adopt chemical vapour deposition technique, magnetron sputtering technique, physical gas phase deposition technology or etching method on insulating medium layer, prepare mask conductor circuit layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510903214.4A CN105390474A (en) | 2015-12-09 | 2015-12-09 | High-thermal-conductivity and low-expansion conductive pattern board and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510903214.4A CN105390474A (en) | 2015-12-09 | 2015-12-09 | High-thermal-conductivity and low-expansion conductive pattern board and preparation method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105390474A true CN105390474A (en) | 2016-03-09 |
Family
ID=55422588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510903214.4A Pending CN105390474A (en) | 2015-12-09 | 2015-12-09 | High-thermal-conductivity and low-expansion conductive pattern board and preparation method therefor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105390474A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111095674A (en) * | 2017-09-15 | 2020-05-01 | 康普技术有限责任公司 | Method for preparing composite dielectric material |
| CN116695078A (en) * | 2023-06-09 | 2023-09-05 | 深圳市博源碳晶科技有限公司 | Heat-conducting diamond composite material substrate and preparation method and application thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1614770A (en) * | 2003-11-04 | 2005-05-11 | 技嘉科技股份有限公司 | Chip module with high radiating performance and its substrate |
| CN101107707A (en) * | 2005-01-20 | 2008-01-16 | 联合材料公司 | Member for semiconductor device and method for manufacture thereof |
| CN103187131A (en) * | 2011-12-28 | 2013-07-03 | 北京有色金属研究总院 | High heat conductivity insulation composite and preparation method thereof |
| CN103895281A (en) * | 2012-12-24 | 2014-07-02 | 北京有色金属研究总院 | High thermal conductive insulation layered composite material and preparation method thereof |
| CN104733399A (en) * | 2013-12-24 | 2015-06-24 | 北京有色金属研究总院 | Layer-shaped high thermal conductive and insulating base plate and preparation method thereof |
-
2015
- 2015-12-09 CN CN201510903214.4A patent/CN105390474A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1614770A (en) * | 2003-11-04 | 2005-05-11 | 技嘉科技股份有限公司 | Chip module with high radiating performance and its substrate |
| CN101107707A (en) * | 2005-01-20 | 2008-01-16 | 联合材料公司 | Member for semiconductor device and method for manufacture thereof |
| CN103187131A (en) * | 2011-12-28 | 2013-07-03 | 北京有色金属研究总院 | High heat conductivity insulation composite and preparation method thereof |
| CN103895281A (en) * | 2012-12-24 | 2014-07-02 | 北京有色金属研究总院 | High thermal conductive insulation layered composite material and preparation method thereof |
| CN104733399A (en) * | 2013-12-24 | 2015-06-24 | 北京有色金属研究总院 | Layer-shaped high thermal conductive and insulating base plate and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111095674A (en) * | 2017-09-15 | 2020-05-01 | 康普技术有限责任公司 | Method for preparing composite dielectric material |
| CN111095674B (en) * | 2017-09-15 | 2022-02-18 | 康普技术有限责任公司 | Method for preparing composite dielectric material |
| CN116695078A (en) * | 2023-06-09 | 2023-09-05 | 深圳市博源碳晶科技有限公司 | Heat-conducting diamond composite material substrate and preparation method and application thereof |
| CN116695078B (en) * | 2023-06-09 | 2024-02-23 | 深圳市博源碳晶科技有限公司 | Heat-conducting diamond composite material substrate and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100588308C (en) | High heat conductivity ceramic base printed circuit board and method for making the same | |
| CN104733399A (en) | Layer-shaped high thermal conductive and insulating base plate and preparation method thereof | |
| CN103917043B (en) | Patterned multi-insulating-material circuit substrate | |
| CN105304593B (en) | High efficiency and heat radiation substrate for photoelectric device | |
| CN103187131A (en) | High heat conductivity insulation composite and preparation method thereof | |
| CN102917534A (en) | DLC (Diamond like Carbon) thin film coating-based ceramic substrate | |
| CN207869492U (en) | Graphene heat-radiating substrate | |
| CN105390474A (en) | High-thermal-conductivity and low-expansion conductive pattern board and preparation method therefor | |
| JP2018101766A (en) | Heat dissipation plate | |
| CN103118487B (en) | Super-high heat-conductive metal base circuit board and preparation method thereof | |
| CN102820418A (en) | Insulated heat-conducting film-layer material for semiconductor illumination and preparation method of insulated heat-conducting film material | |
| CN108575046A (en) | A kind of high heat conduction composite base material multilayer printed circuit board | |
| CN108640701B (en) | A kind of silicon nitride ceramics radiating fin copper-clad plate and preparation method thereof | |
| CN202918581U (en) | Ceramic substrate based on DLC thin film coating | |
| CN103354699B (en) | Many ceramic layers printed substrate | |
| CN110527964A (en) | A kind of diamond-like carbon composite film and its preparation method and application and a kind of IGBT module heat-radiating substrate | |
| CN103354220B (en) | For the pattern structure substrate of optics and electronic device | |
| CN203167426U (en) | Ultrahigh heat-conducting metal-based circuit board | |
| CN104531026A (en) | Aluminum substrate binder and aluminum substrate using same | |
| CN103855125B (en) | High heat conducting pattern circuit substrate | |
| CN207775101U (en) | Power electronic device AlN ceramic bonded copper base | |
| CN103331968B (en) | High thermal conductive fiberglass cloth base laminate | |
| CN116695079B (en) | Heat-conducting insulating diamond composite material substrate and preparation method and application thereof | |
| CN101777621A (en) | High-heat-conductivity basal plate used for packaging high-power LED and preparation method | |
| CN205058726U (en) | High heat conduction metal matrix composite base plate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160309 |
|
| RJ01 | Rejection of invention patent application after publication |