CN209249223U - A kind of high-power diamond resistance - Google Patents
A kind of high-power diamond resistance Download PDFInfo
- Publication number
- CN209249223U CN209249223U CN201822252827.8U CN201822252827U CN209249223U CN 209249223 U CN209249223 U CN 209249223U CN 201822252827 U CN201822252827 U CN 201822252827U CN 209249223 U CN209249223 U CN 209249223U
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- resistance
- cvd diamond
- diamond substrate
- power
- utility
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Abstract
The utility model discloses a kind of high-power diamond resistance, the diamond resistance includes a cvd diamond substrate, the back side of the cvd diamond substrate is equipped with roasting layer gold, and the positive two sides of the cvd diamond substrate are equipped with electrode, and the positive intermediate position of the cvd diamond substrate is equipped with resistive film.The utility model resistance value meets 100 ± 0.5 Ω, is able to bear the requirement of 20W-150W power application, and small in size, and resistance accuracy is high, reproducible, can be widely applied to the apparatus fields such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
Description
Technical field
The utility model relates to resistance, and in particular to a kind of high-power diamond resistance.
Background technique
Resistance is one for circuit balancing or the device of absorption radio frequency or microwave power.Small size electricity in the prior art
The frequency and power of resistance are accordingly rare for 10 watts or more power and high frequency, and resistance value is unable to satisfy 100 ± 0.5 Ω, is able to bear
The requirement of 20W-150W power application.
Utility model content
The utility model to solve the above-mentioned problems, to provide a kind of high-power diamond resistance.
In order to achieve the above objectives, the technical solution of the utility model is as follows:
A kind of high-power diamond resistance, the diamond resistance include a cvd diamond substrate, the cvd diamond substrate
The back side is equipped with roasting layer gold, and the positive two sides of the cvd diamond substrate are equipped with electrode, the positive centre of the cvd diamond substrate
Position is equipped with resistive film.
In a preferred embodiment of the utility model, the input terminal of the resistive film and the resistance value of output end are all
100±0.5Ω。
3 in a preferred embodiment of the utility model, and the resistive film is symmetrical structure, and the electricity with two sides respectively
Pole connection
The beneficial effects of the utility model are:
The utility model resistance value meets 100 ± 0.5 Ω, is able to bear the requirement of 20W-150W power application, and small in size,
Resistance accuracy is high, reproducible, can be widely applied to the apparatus fields such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor
Under, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is the schematic diagram of internal structure of the utility model；
Fig. 2 is the top view of the utility model.
Specific embodiment
In order to be easy to understand the technical means, creative features, achievement of purpose, and effectiveness of the utility model, under
Face combines and is specifically illustrating, and the utility model is further described.
Referring to Fig. 1 and Fig. 2, high-power diamond resistance provided by the utility model a comprising cvd diamond substrate 100.
Cvd diamond substrate 100 is convenient for power absorption for installing electrode and resistance, and its good heat dissipation effect.
It is equipped with roasting layer gold 200 at the back side of cvd diamond substrate 100, roasting layer gold 200 is easy for the direct of cvd diamond substrate 100
Installation, cvd diamond substrate 100 can be directly weldingly fixed on corresponding mounting platform by roasting layer gold 200, and installation both facilitated, surely
It is qualitative and good.
It is equipped with electrode 300 in the positive two sides of cvd diamond substrate 100, and in the positive centre of cvd diamond substrate 100
Position is equipped with resistive film 400.
Resistive film 400 is symmetrical structure, and is connect respectively with the electrode 300 of two sides, so as to form resistance.
Electrode 300 is used to signal passing to cvd diamond substrate 100, specifically can be in diamond in order to improve efficiency of transmission
Card slot is arranged in 100 two sides of substrate, and electrode 300 is embedded in card slot.
Resistive film 400 is specifically to pass through the direct high-frequency sputtering of thin-film technique in Buddha's warrior attendant by tantalum nitride for absorbing power
It is formed on ground mass plate 100, the resistance value of input terminal and output end can all reach 100 ± 0.5 Ω.
For resistive film 400 when absorbing power, the heat of generation can be directly delivered to corresponding peace by cvd diamond substrate 100
It radiates on assembling platform.
Several heat dissipation channels 110, these 110 one end of heat dissipation channel and resistance can be equipped with inside cvd diamond substrate 100
Film 400 connects, and the other end is connect with roasting layer gold 200, and the heat on cvd diamond substrate 100 can also pass through these heat dissipation channels 110
It is quickly transmitted to roasting layer gold 200, is then transmitted on corresponding mounting platform and is distributed again.
In addition, can be equipped with a heat-conducting layer between cvd diamond substrate 100 and roasting layer gold 200, heat-conducting layer is for improving gold
Heat transfer efficiency between hard rock substrate 100 and roasting layer gold 200, to further increase radiating efficiency.
Heat-conducting layer is specifically made of copper material.
The basic principles and main features of the present invention and the advantages of the present invention have been shown and described above.Current row
The technical staff of industry is described in above embodiments and description it should be appreciated that the present utility model is not limited to the above embodiments
Only illustrate the principles of the present invention, on the premise of not departing from the spirit and scope of the utility model, the utility model is also
It will have various changes and improvements, these various changes and improvements fall within the scope of the claimed invention.The utility model
Claimed range is defined by the appending claims and its equivalent thereof.
Claims (3)
1. a kind of high-power diamond resistance, which is characterized in that the diamond resistance includes a cvd diamond substrate, the Buddha's warrior attendant
The back side of ground mass plate is equipped with roasting layer gold, and the positive two sides of the cvd diamond substrate are equipped with electrode, and the cvd diamond substrate is just
The intermediate position in face is equipped with resistive film.
2. a kind of high-power diamond resistance according to claim 1, which is characterized in that the input terminal of the resistive film and
The resistance value of output end is all 100 ± 0.5 Ω.
3. a kind of high-power diamond resistance according to claim 1, which is characterized in that the resistive film is symmetrical junction
Structure, and connect respectively with the electrode of two sides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822252827.8U CN209249223U (en) | 2018-12-29 | 2018-12-29 | A kind of high-power diamond resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822252827.8U CN209249223U (en) | 2018-12-29 | 2018-12-29 | A kind of high-power diamond resistance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209249223U true CN209249223U (en) | 2019-08-13 |
Family
ID=67535550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822252827.8U Active CN209249223U (en) | 2018-12-29 | 2018-12-29 | A kind of high-power diamond resistance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209249223U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114038640A (en) * | 2021-09-18 | 2022-02-11 | 盛雷城精密电阻（江西）有限公司 | Ultrahigh frequency radio frequency resistor and production method thereof |
-
2018
- 2018-12-29 CN CN201822252827.8U patent/CN209249223U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114038640A (en) * | 2021-09-18 | 2022-02-11 | 盛雷城精密电阻（江西）有限公司 | Ultrahigh frequency radio frequency resistor and production method thereof |
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