CN206413253U - A kind of wideband high-power supported chip - Google Patents
A kind of wideband high-power supported chip Download PDFInfo
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- CN206413253U CN206413253U CN201720120435.9U CN201720120435U CN206413253U CN 206413253 U CN206413253 U CN 206413253U CN 201720120435 U CN201720120435 U CN 201720120435U CN 206413253 U CN206413253 U CN 206413253U
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- metal tape
- tape line
- thin film
- wideband high
- resistive layer
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Abstract
The utility model discloses a kind of wideband high-power supported chip, including dielectric substrate (1), the upper surface of described dielectric substrate (1) is provided with the first metal tape line（2）, the second metal tape line（4）With rectangular thin film resistive layer（3）, thin film resistive layer（3）It is arranged at the first metal tape line（2）With the second metal tape line（4）Between, and respectively with the first metal tape line（2）With the second metal tape line（4）Electrical connection；The dielectric substrate（1）Lower surface be provided with metal level, dielectric substrate（1）It is internally provided with connection metal level and the second metal tape line（4）Metallization via（5）.The utility model provides a kind of wideband high-power supported chip, can be on the premise of wideband high-power supported chip matching impedance is fixed, it is ensured that its good tolerance power.
Description
Technical field
The utility model is related to a kind of wideband high-power supported chip.
Background technology
With the development of science and technology with the continuous progress of social scientific and technological level, microwave and millimeter wave circuit is more and more wider
Generally applied in the work of people and the scientific practice of society；For now, microwave and millimeter wave circuit overwhelming majority selection
50 Ω as system reference impedance, therefore multimode system cascade, test measurement process in, be required to the end of each module
During mouthful impedance, connector, the characteristic impedance of test cable are 50 Ω, multiport device, no port is also required to meet 50 Ω
Matched load carrys out absorption signal, it is to avoid in signal reflex telegram in reply road, influences device performance.
Therefore in HIGH-POWERED MICROWAVES product, if the underpower that 50 Ω loads can bear, it is possible to load can be caused
Or damage of product, the normal work to microwave and millimeter wave circuit has a negative impact；But in existing high power load chip, if
Wanting expansion, it bears power, often changes the matching impedance inside supported chip, and then be unfavorable for and microwave and millimeter wave electricity
Other modules in road match.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art that there is provided a kind of wideband high-power supported chip.
The purpose of this utility model is achieved through the following technical solutions：A kind of wideband high-power supported chip, bag
Include dielectric substrate, the upper surface of described dielectric substrate is provided with the first metal tape line, the second metal tape line and rectangular thin
Film resistive layer, thin film resistive layer is arranged between the first metal tape line and the second metal tape line, and respectively with the first metal tape line
With the electrical connection of the second metal tape line；The lower surface of the dielectric substrate is provided with metal level, and dielectric substrate is internally provided with connection
The metallization via of metal level and the second metal tape line.
The aperture on the aperture coordinated with metallization via, the second metal tape line is additionally provided with the second metal tape line
Connected with the metallization via.
Aperture and the metallization via on the second metal tape line are circular port.
Aperture on the second metal tape line is equal with the metallization via diameter.
Described wideband high-power supported chip also includes access interface, and the access interface and the first metal tape line connect
Connect.
There is the first overlapping region, and the first metal tape line and film between the first metal tape line and thin film resistive layer
Resistive layer is realized by the first overlapping region and electrically connected.
There is the second overlapping region, and the second metal tape line and film between the second metal tape line and thin film resistive layer
Resistive layer is realized by the first overlapping region and electrically connected.
The beneficial effects of the utility model are：(1) resistance of film resistor is only relevant with its length-width ratio, with its absolute dimension
Size is unrelated, while the area of film resistor is bigger, the electric current that can be born is bigger, and tolerance power also increases therewith；Therefore pass through
The structure of the application, can be on the premise of wideband high-power supported chip matching impedance be fixed, it is ensured that its good tolerance work(
Rate.
（2）First metal tape line is realized by the first overlapping region with thin film resistive layer and electrically connected；Second metal tape line with
Thin film resistive layer is realized by the first overlapping region and electrically connected；Due to realizing metal tape line and film resistor by way of overlapping
Electrical connection between layer, therefore local shedding can be avoided to produce an influence to supported chip work, improve whole wideband high-power
The reliability of supported chip.
Brief description of the drawings
Fig. 1 is dimensional structure diagram of the present utility model；
Fig. 2 is top view of the present utility model；
Fig. 3 is the connection diagram of thin film resistive layer and the first metal tape line and the second metal tape line；
Fig. 4 is one embodiment middle width strip high power load chip port standing wave simulation curve schematic diagram of the application；
In figure, 1- dielectric substrates, 2- the first metal tape lines, 3- thin film resistive layers, 4- the second metal tape lines, 5- metallized
Hole, 6- apertures, the overlapping regions of 7- first, the overlapping regions of 8- second.
Embodiment
The technical solution of the utility model, but protection domain of the present utility model are described in further detail below in conjunction with the accompanying drawings
It is not limited to as described below.
As shown in Figure 1 and 2, a kind of wideband high-power supported chip, including dielectric substrate 1, described dielectric substrate 1 it is upper
Surface is provided with the first metal tape line 2, the second metal tape line 4 and rectangular thin film resistive layer 3, and thin film resistive layer 3 is arranged at
Between first metal tape line 2 and the second metal tape line 4, and electrically connected respectively with the first metal tape line 2 and the second metal tape line 4；
The lower surface of the dielectric substrate 1 is provided with metal level（Conductive metal layer, such as copper, and metal level overwrite media substrate 1
Whole lower surface）, dielectric substrate 1 be internally provided with connection metal level and the second metal tape line 4 metallization via 5.
It is additionally provided with the second metal tape line 4 on the aperture 6 coordinated with metallization via 5, the second metal tape line 4
Aperture 6 is connected with the metallization via 5.
Aperture 6 and the metallization via 5 on the second metal tape line 4 are circular port.
Aperture 6 on the second metal tape line 4 is equal with the metallization diameter of via 5.
Described wideband high-power supported chip also includes access interface, and the access interface connects with the first metal tape line 2
Connect.
As shown in figure 3, there is the first overlapping region 7 between the first metal tape line 2 and thin film resistive layer 3, and first
Metal tape line 2 is realized by the first overlapping region 7 with thin film resistive layer 3 and electrically connected.
There is the second overlapping region 8 between the second metal tape line 4 and thin film resistive layer 3, and the second metal tape line 2 with
Thin film resistive layer 3 is realized by the first overlapping region 7 and electrically connected.
In embodiments herein, dielectric substrate 1 is by AlN（Aluminium nitride）Medium is made, the first metal tape line 2 and second
Metal tape line 4 can be attached to the upper surface of dielectric substrate 1 by the way of high temperature evaporation, it would however also be possible to employ the side of high temperature sputtering
Formula is attached to the upper surface of dielectric substrate 1；Thin film resistive layer can use the alloy pulps such as NiCr to be coated in the upper of dielectric substrate 1
Surface, and there is overlapping region with the first metal tape line 2 and the second metal tape line 4；（In certain embodiments, thin film resistive layer
Can also be attached to the upper surface of dielectric substrate 1 by the way of evaporation, and with the first metal tape line 2 and the second metal tape line 4
There is overlapping region）；Due to the presence of overlapping region, local shedding can be avoided to produce an influence to supported chip work, carried
The reliability of high whole wideband high-power supported chip.
In normal work, the metal level ground connection of the lower surface of dielectric substrate 1, the first metal tape line 2 is connected by access interface
Required target location is connected to, electric current passes sequentially through the first metal tape line 2, thin film resistive layer 3, the second metal tape line 4, metallization
Via 5 flows into the ground metal layer of the lower surface of dielectric substrate 1；
It is known that the power P of resistance R consumption is with its square being directly proportional by current effective value I, i.e. P=I2R.For example
50 Ω resistance are 0.5A electric currents by virtual value, and its power consumed is 50*0.52=12.5W, if being 0.4A by virtual value
Electric current, its power consumed is 50*0.42=8W；
And resistance R=Rs* of film resistor（L/W）, Rs is sheet resistance, for same thin film resistive layer, and it is fixation
Value, therefore film resistor resistance is only relevant with its length-width ratio (L/W), it is unrelated with its absolute dimension size, and the area of film resistor
Bigger, the electric current that can be born is bigger, and tolerance power also increases therewith；So, the structure based on the application, we only need to
Ensure that the length-width ratio of thin film resistive layer 3 is fixed, you can ensure that the resistance of film resistor is fixed, and then cause wideband high-power load core
The matching impedance of piece is fixed；
Different sizes are designed for film resistor according to different situations simultaneously, you can so that high power load chip is resistance to
Met and required by power.
For example, it is necessary to enable 50 Ω film resistors to bear 10W power in one embodiment of the application：
The current density of film resistor is about 1mA/um, i.e., on the sense of current, can bear 1mA's per 1um width
Continuous current；In order to allow 50 Ω film resistors to bear 10W power, it is necessary to the electric current that virtual value is 447mA can be born, then
Its width have to be larger than 447um：Under conditions of the minimum widith of film resistor is ensured, the length-width ratio of film resistor is locked, is led to
Cross the shape and size of optimization film resistor（Correspondingly, the shape and size of the first metal tape line and the second metal tape line are also needed
Accordingly to adjust, be adapted to thin film resistive layer）, you can make the overall impedance of high power load chip in very wide working band
Be stable near 50 Ω, also, the embodiment middle width strip high power load chip port standing wave simulation curve as shown in figure 4,
It can be seen that the chip port disclosure satisfy that standing-wave ratio is less than 1.5 and required.
Claims (7)
1. a kind of wideband high-power supported chip, it is characterised in that：Including dielectric substrate (1), described dielectric substrate (1) it is upper
Surface is provided with the first metal tape line（2）, the second metal tape line（4）With rectangular thin film resistive layer（3）, thin film resistive layer
（3）It is arranged at the first metal tape line（2）With the second metal tape line（4）Between, and respectively with the first metal tape line（2）With the second gold medal
Category band line（4）Electrical connection；The dielectric substrate（1）Lower surface be provided with metal level, dielectric substrate（1）It is internally provided with connection
Metal level and the second metal tape line（4）Metallization via（5）.
2. a kind of wideband high-power supported chip according to claim 1, it is characterised in that：The second metal tape line
（4）On be additionally provided with metallization via（5）The aperture of cooperation（6）, the second metal tape line（4）On aperture（6）With the gold
Categoryization via（5）Connection.
3. a kind of wideband high-power supported chip according to claim 2, it is characterised in that：The second metal tape line
（4）On aperture（6）With the metallization via（5）It is circular port.
4. a kind of wideband high-power supported chip according to claim 3, it is characterised in that：The second metal tape line
（4）On aperture（6）With the metallization via（5）Diameter is equal.
5. a kind of wideband high-power supported chip according to claim 1, it is characterised in that：Described wideband high-power is born
Carrying chip also includes access interface, the access interface and the first metal tape line（2）Connection.
6. a kind of wideband high-power supported chip according to claim 1, it is characterised in that：The first metal tape line
（2）With thin film resistive layer（3）Between exist the first overlapping region（7）, and the first metal tape line（2）With thin film resistive layer（3）It is logical
Cross the first overlapping region（7）Realize electrical connection.
7. a kind of wideband high-power supported chip according to claim 1, it is characterised in that：The second metal tape line
（4）With thin film resistive layer（3）Between exist the second overlapping region（8）, and the second metal tape line（2）With thin film resistive layer（3）It is logical
Cross the first overlapping region（7）Realize electrical connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720120435.9U CN206413253U (en) | 2017-02-09 | 2017-02-09 | A kind of wideband high-power supported chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720120435.9U CN206413253U (en) | 2017-02-09 | 2017-02-09 | A kind of wideband high-power supported chip |
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| Publication Number | Publication Date |
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| CN206413253U true CN206413253U (en) | 2017-08-15 |
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| CN201720120435.9U Active CN206413253U (en) | 2017-02-09 | 2017-02-09 | A kind of wideband high-power supported chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108091625A (en) * | 2017-12-24 | 2018-05-29 | 苏州赛源微电子有限公司 | High power load chip |
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2017
- 2017-02-09 CN CN201720120435.9U patent/CN206413253U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108091625A (en) * | 2017-12-24 | 2018-05-29 | 苏州赛源微电子有限公司 | High power load chip |
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