JPH05175001A - High frequency resistor - Google Patents
High frequency resistorInfo
- Publication number
- JPH05175001A JPH05175001A JP3355596A JP35559691A JPH05175001A JP H05175001 A JPH05175001 A JP H05175001A JP 3355596 A JP3355596 A JP 3355596A JP 35559691 A JP35559691 A JP 35559691A JP H05175001 A JPH05175001 A JP H05175001A
- Authority
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- Japan
- Prior art keywords
- resistor
- thin film
- high frequency
- diamond thin
- substrate
- Prior art date
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- Non-Adjustable Resistors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、高周波電力を減衰させ
る減衰器や、終端整合のための終端抵抗器として用いる
際に好適な高周波抵抗器に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an attenuator for attenuating high frequency power and a high frequency resistor suitable for use as a termination resistor for termination matching.
【０００２】[0002]
【従来の技術】最近の無線通信分野では、自動車電話、
ポケットベル、衛星利用の通信方式など音声、画像、デ
−タ通信が急速なテンポで拡大しつつあり、これらの無
線装置は小型化の要請がますます強くなっている。自動
車電話等に使用される周波数は、８００ＭＨZ 帯や１５
００ＭＨZ 帯で数十Ｗから数百Ｗの電力のものがある
が、高周波抵抗器はこのような電力が入力されたとき、
かなり大きな発熱を伴う。従って、この熱を効率よく外
部へ放熱し、長期にわたり抵抗の劣化を生じないものが
必要である。また、高周波抵抗器で終端されるような回
路では、このような周波数帯において電圧定在波比ＶＳ
ＷＲができるだけ１．０に近いものが要求される。2. Description of the Related Art Recently, in the field of wireless communication, car telephones,
With the rapid expansion of voice, image, and data communications such as pagers and satellite-based communication methods, there is an increasing demand for miniaturization of these wireless devices. The frequencies used for car phones are 800 MHz Z band and 15
When there are those several tens W of power hundreds W at 00MH Z band, high-frequency resistor which such power is inputted,
With a fairly large fever. Therefore, it is necessary to efficiently dissipate this heat to the outside and prevent the resistance from deteriorating for a long period of time. In a circuit terminated with a high frequency resistor, the voltage standing wave ratio VS
A WR close to 1.0 is required.
【０００３】更に、抵抗体内部で発生した熱を有効に外
部へ逃がすために、当然熱伝導率の大きな絶縁物が必要
である。この意味では、従来使われているセラミックで
最も安定した物質の部類に入るベリリア磁器（ＢｅＯ）
が２６０Ｗ／ｍ・Ｋと大きな熱伝導率を有するが、更に
携帯送信機等を小型するためには、より放熱性の高い構
造の抵抗器が要請されている。また、上記ＶＳＷＲ等の
周波数特性をよくするには、これらのサブストレ−ト上
に形成された薄膜あるいは厚膜の抵抗体と、対接地間に
生じるキャパシタンス（ストレ−キャパシティ）をでき
るだけ小さくする必要がある。Further, in order to effectively dissipate the heat generated inside the resistor to the outside, an insulator having a large thermal conductivity is naturally required. In this sense, beryllia porcelain (BeO), which is one of the most stable ceramic materials used in the past,
Has a large thermal conductivity of 260 W / m · K, but in order to further miniaturize the portable transmitter and the like, a resistor having a structure with higher heat dissipation is required. Further, in order to improve the frequency characteristics such as VSWR, it is necessary to minimize the capacitance (stray capacity) generated between the thin film or thick film resistor formed on these sub-strats and the ground. There is.
【０００４】ここで、キャパシタンスは一般に次式の様
に表わされるので、材料の比誘電率が小さいものが高い
周波数で良い特性を得られることがわかる。 ＣS ＝８．８５×１０-12 ×（Ｓ・ μ／ｔ）［ｐＦ］ 但し、Ｃｓはキャパシタンス、Ｓは抵抗体の表面積、μ
は比誘電率、ｔは抵抗体と接地との間隔である。実際の
抵抗体は純抵抗でなく、キャパシタンスやインダクタン
スを含むが、周波数が高くなると、これらによってイン
ピ−ダンスが乱されてＶＳＷＲが悪くなるのである。Since the capacitance is generally expressed by the following equation, it can be seen that good characteristics can be obtained at high frequencies even if the material has a small relative dielectric constant. C S = 8.85 × 10 −12 × (S · μ / t) [pF] where Cs is capacitance, S is the surface area of the resistor, μ
Is the relative permittivity and t is the distance between the resistor and ground. An actual resistor does not have a pure resistance but includes a capacitance and an inductance. However, as the frequency becomes higher, the impedance is disturbed by these and the VSWR becomes worse.
【０００５】[0005]
【発明が解決しようとする課題】このように、無線装置
に用いる電子部品の中でも電力回路に使用される高周波
抵抗器は、発熱の問題を解決しようとすると大型化し、
高周波特性を損なうことになるため、小型化が困難であ
り、発熱の問題を解決して小型化できたとしても高信頼
性を得ることが難しかった。また、高周波抵抗器の基板
材料として、従来から用いられるベリリア磁器は、熱伝
導率が良いものの、その有害性のため使用に障害があ
り、ベリリア磁器の代わりにアルミナ磁器（Ａｌ2 Ｏ
3 ）を用いると、熱伝導率が小さいため形状が大きくな
ってしまうという問題があった。本発明の課題は、高周
波抵抗器の基板材料から有害物質を排除するとともに、
単位面積あたりの耐電力密度が高く、小型化された熱的
耐性の高い、高信頼性の高周波抵抗器を得ることであ
る。As described above, among the electronic components used in the wireless device, the high frequency resistor used in the power circuit becomes large in size in order to solve the problem of heat generation,
Since high frequency characteristics are impaired, it is difficult to reduce the size, and even if the problem of heat generation is solved and the size can be reduced, it is difficult to obtain high reliability. Moreover, although beryllia porcelain conventionally used as a substrate material for high-frequency resistors has good thermal conductivity, it has a drawback in its use due to its harmfulness. Instead of beryllia porcelain, alumina porcelain (Al 2 O
When 3 ) is used, there is a problem that the shape becomes large because the thermal conductivity is small. The object of the present invention is to eliminate harmful substances from the substrate material of the high frequency resistor,
It is to obtain a high-reliability high-frequency resistor that has a high power withstanding density per unit area, a small size, and high thermal resistance.
【０００６】[0006]
【課題を解決するための手段】本発明は、セラミック基
板上にダイヤモンドの薄膜を形成し、このダイヤモンド
の薄膜上に抵抗膜を形成することにより放熱性を向上さ
せて、有害物質を用いずに小型化された高信頼性の高周
波抵抗器を実現した。SUMMARY OF THE INVENTION According to the present invention, a diamond thin film is formed on a ceramic substrate, and a resistive film is formed on the diamond thin film to improve heat dissipation and to eliminate harmful substances. We have realized a compact and highly reliable high frequency resistor.
【０００７】[0007]
【作用】ダイヤモンド自体の熱伝導率は、例えば、前記
ベリリア磁器（ＢｅＯ）等と比較するとその３〜８倍ぐ
らいに相当するため、このダイヤモンド薄膜層を使用す
る事により、従来よりさらに小型で、かつ放熱性の高い
高周波抵抗器を得ることができる。The thermal conductivity of diamond itself is equivalent to, for example, 3 to 8 times that of beryllia porcelain (BeO) and the like. In addition, it is possible to obtain a high frequency resistor with high heat dissipation.
【０００８】[0008]
【実施例】図１に、本発明の高周波抵抗器の第１実施例
を示す。図１において、１はセラミックからなる基板で
その基板材料として、たとえば窒化アルミニウム（Ａｌ
Ｎ）が使用されている。この基板１上に、ダイヤモンド
の薄膜２が形成されている。このダイヤモンド薄膜２
は、たとえば気相成長法を用いて形成されており、この
ダイヤモンドの薄膜２上に、薄膜あるいは厚膜の抵抗体
３が形成されている。この抵抗体３で電力が消費される
ことにより、抵抗体３から発生される熱は、ダイヤモン
ドの熱伝導率が極めて大きいため、熱はダイヤモンド薄
膜２上に急速に伝導される。さらにダイヤモンド薄膜２
から基板１表面上に熱が伝わるので、基板１は広い面積
から効率よく熱を吸収することができ、基板１の見掛け
上の熱伝導率が向上し、その放熱性を良好とすることが
できる。1 shows a first embodiment of a high frequency resistor according to the present invention. In FIG. 1, reference numeral 1 is a substrate made of ceramics, and the substrate material is, for example, aluminum nitride (Al
N) are used. A diamond thin film 2 is formed on the substrate 1. This diamond thin film 2
Is formed by using, for example, a vapor phase growth method, and a thin film or thick film resistor 3 is formed on the diamond thin film 2. The electric power consumed by the resistor 3 causes the heat generated from the resistor 3 to have a very high thermal conductivity of diamond, so that the heat is rapidly conducted on the diamond thin film 2. Diamond thin film 2
Since the heat is transferred from the surface of the substrate 1 to the surface of the substrate 1, the substrate 1 can efficiently absorb the heat from a large area, the apparent thermal conductivity of the substrate 1 is improved, and the heat dissipation can be improved. ..
【０００９】図２は、本発明の高周波抵抗器の第２実施
例である。図２において、３は薄膜または厚膜の抵抗
体、２ａは第１のダイヤモンド薄膜、２ｂは第２のダイ
ヤモンド薄膜、２ｃは第３のダイヤモンド薄膜、１ａは
セラミックからなる第１の基板層、１ｂ、１ｃはセラミ
ックからなる第２、第３の基板層である。セラミック体
１ａ，１ｂ，１ｃの各々の上面にダイヤモンド薄膜２
ａ，２ｂ，２ｃをそれぞれ形成したものを、複数枚張り
合せて基板１が構成されている。図２の構成によると、
ダイヤモンド薄膜２、２ａ、２ｂの層が３層になってお
り、熱はこのダイヤモンド薄膜２、２ａ、２ｂで広い面
積に拡散されるためより一層熱の伝達が良好となり、基
板層１ａ，１ｂ、１ｃは効率よく熱を吸収でき、基板１
の見掛け上の熱伝導率を一層向上することができる。FIG. 2 shows a second embodiment of the high frequency resistor according to the present invention. In FIG. 2, 3 is a thin film or thick film resistor, 2a is a first diamond thin film, 2b is a second diamond thin film, 2c is a third diamond thin film, 1a is a first substrate layer made of ceramic, and 1b. Reference numerals 1c are second and third substrate layers made of ceramics. A diamond thin film 2 is formed on the upper surface of each of the ceramic bodies 1a, 1b, 1c.
A plurality of substrates each having a, 2b, and 2c formed thereon are bonded together to form the substrate 1. According to the configuration of FIG.
Since the diamond thin films 2, 2a and 2b have three layers and the heat is diffused in a large area by the diamond thin films 2, 2a and 2b, the heat transfer is further improved, and the substrate layers 1a and 1b, 1c can absorb heat efficiently, and substrate 1
The apparent thermal conductivity of can be further improved.
【００１０】図３は、本発明の高周波抵抗器の第３実施
例である。図３において、基板１１には多数の孔１２が
開けられており、孔１２の内側にはダイヤモンド１２ａ
がコ−ティングされている。更に、基板１１の上面には
ダイヤモンドの薄膜１３が設けられており、この薄膜１
３上には抵抗体１４が設けられている。図３の構成によ
れば、抵抗体１４から発生された熱は、多数の孔１２の
内側に設けたダイヤモンドコ−ティング１２ａを伝わっ
て急速に基板１１に伝達されるので、基板１１は極めて
広い面積から熱を吸収でき、基板１１の見掛け上の熱伝
導率を大きく向上できる。FIG. 3 shows a third embodiment of the high frequency resistor according to the present invention. In FIG. 3, a large number of holes 12 are formed in the substrate 11, and diamonds 12 a are formed inside the holes 12.
Is coated. Further, a diamond thin film 13 is provided on the upper surface of the substrate 11.
A resistor 14 is provided on the surface 3. According to the configuration of FIG. 3, the heat generated from the resistor 14 is rapidly transmitted to the substrate 11 through the diamond coating 12a provided inside the many holes 12, so that the substrate 11 is extremely wide. The heat can be absorbed from the area, and the apparent thermal conductivity of the substrate 11 can be greatly improved.
【００１１】図４は、本発明の高周波抵抗器の第４実施
例である。図４において、基板２１は多数のセラミック
体２１1、〜２１n を張り合せることにより構成されてい
る。このセラミック体２１1 〜２１n の各々は、図５に
示すように薄い板状をしており、板状のセラミック体２
１1 〜２１n の上面にダイヤモンド薄膜２２1 〜２２n
がコ−ティングされている。そして、基板２１は、この
セラミック体２１1 〜２１n が積層された構成となって
いる。さらに、セラミック体２１1 〜２１n からなる基
板２１上には、ダイヤモンドコ−ティング２３が施され
ており、薄膜または厚膜の抵抗体２４が、ダイヤモンド
コ−ティング２３の上に形成されている。図４の構成に
よれば、抵抗体２４から発生された熱はダイヤモンドコ
−ティング２３で表面横方向に急速に伝達され，さらに
ダイヤモンド薄膜２２1 〜２２n基板１中を縦方向に素
早く伝わって、基板１を構成するセラミック体２１1 〜
２１n 全体に熱が伝えられるので、熱は極めて効率よく
基板１に吸収され基板１の見掛け上の熱伝導率がより一
層向上する。FIG. 4 shows a fourth embodiment of the high frequency resistor according to the present invention. 4, the substrate 21 is a large number of ceramic body 21 1 is constituted by combining span the through 21 n. Each of the ceramic bodies 21 1 to 21 n has a thin plate shape as shown in FIG.
1 1 through 21 n top thin diamond film 22 1 through 22 n of
Is coated. The substrate 21 has a structure in which the ceramic bodies 21 1 to 21 n are laminated. Further, a diamond coating 23 is provided on the substrate 21 composed of the ceramic bodies 21 1 to 21 n , and a thin film or thick film resistor 24 is formed on the diamond coating 23. .. According to the structure shown in FIG. 4, the heat generated from the resistor 24 is rapidly transferred in the lateral direction of the surface by the diamond coating 23, and further quickly transferred in the vertical direction in the diamond thin film 22 1 to 22 n substrate 1. , The ceramic body 21 1 constituting the substrate 1 ~
Since heat is transferred to the entire 21 n , the heat is absorbed very efficiently by the substrate 1 and the apparent thermal conductivity of the substrate 1 is further improved.
【００１２】図６に本発明の高周波抵抗器を、筐体に組
み込んだ構成を示す。図６おいて、３１は本発明の高周
波抵抗器であり筐体の下面に固着されている。３２は高
周波抵抗器３１と接栓３４とを接続する接続線、３３は
抵抗器３１からの熱を放散するとともに、抵抗器３１を
遮蔽する金属性の筐体、３４は同軸ケ−ブルを接続する
接栓、３５は筐体から熱を放散するヒ−トシンクであ
る。第６図において、高周波抵抗器３１から発生された
熱は筐体３３を介してヒ−トシンク３５に伝わり、ここ
で放熱されるようになっている。FIG. 6 shows a structure in which the high frequency resistor of the present invention is incorporated in a housing. In FIG. 6, reference numeral 31 is a high frequency resistor of the present invention, which is fixed to the lower surface of the housing. Reference numeral 32 is a connecting wire that connects the high frequency resistor 31 and the plug 34, 33 is a metal housing that dissipates heat from the resistor 31 and shields the resistor 31, and 34 is a coaxial cable. The reference numeral 35 denotes a heat sink that dissipates heat from the housing. In FIG. 6, heat generated from the high frequency resistor 31 is transmitted to the heat sink 35 through the housing 33 and is radiated there.
【００１３】[0013]
【発明の効果】以上説明したように、本発明の高周波抵
抗器は、熱伝導率の極めて優れているダイヤモンド薄膜
を介して、抵抗器から発生する熱を放熱しているため、
抵抗器の基板としてセラミックを用いても基板を薄くす
ることなく放熱を効率よく行えるので、ＶＳＷＲを悪く
することなく高周波抵抗器を小型化することができる。As described above, since the high frequency resistor of the present invention radiates the heat generated from the resistor through the diamond thin film having an extremely excellent thermal conductivity,
Even if ceramic is used as the substrate of the resistor, heat can be efficiently dissipated without thinning the substrate, so that the high frequency resistor can be miniaturized without degrading VSWR.
【図１】本発明の高周波抵抗器の第１実施例の構成を示
す。FIG. 1 shows the configuration of a first embodiment of a high frequency resistor according to the present invention.
【図２】本発明の高周波抵抗器の第２実施例の構成を示
す。FIG. 2 shows the configuration of a second embodiment of the high-frequency resistor according to the present invention.
【図３】本発明の高周波抵抗器の第３実施例の構成を示
す。FIG. 3 shows the configuration of a third embodiment of the high-frequency resistor according to the present invention.
【図４】本発明の高周波抵抗器の第４実施例の構成を示
す。FIG. 4 shows the configuration of a fourth embodiment of the high-frequency resistor according to the present invention.
【図５】第４実施例の基板の１部を示す図である。FIG. 5 is a diagram showing a part of the substrate of the fourth embodiment.
【図６】本発明の高周波抵抗器を筐体に組み込んだ構成
を示す図である。FIG. 6 is a diagram showing a configuration in which the high frequency resistor of the present invention is incorporated in a housing.
１ セラミック基板 ２ ダイヤモンド薄膜 ３ 抵抗体 1 Ceramic substrate 2 Diamond thin film 3 Resistor
Claims (5)
上に形成したダイヤモンド薄膜と、該ダイヤモンド薄膜
の上に形成した抵抗層を備え、前記抵抗層の両端に電極
を設けるとともに、前記セラミック基板を放熱体に接触
した状態で固定したことを特徴とする高周波抵抗器。1. A ceramic substrate, a diamond thin film formed on the ceramic substrate, and a resistance layer formed on the diamond thin film, electrodes are provided at both ends of the resistance layer, and the ceramic substrate is a heat radiator. A high-frequency resistor characterized by being fixed while being in contact with.
ック板を、複数枚張り合せてセラミック基板を構成した
ことを特徴とする請求項１に記載の高周波抵抗器。2. The high frequency resistor according to claim 1, wherein a ceramic substrate is constructed by laminating a plurality of ceramic plates each having a diamond thin film on the upper surface thereof.
上面と、前記孔の内面にダイヤモンドの薄膜を形成し、
セラミック基板を構成したことを特徴とする請求項１に
記載の高周波抵抗器。3. A diamond thin film is formed on the upper surface of a ceramic body provided with a large number of holes vertically and on the inner surface of the holes,
The high frequency resistor according to claim 1, wherein the high frequency resistor comprises a ceramic substrate.
セラミック板を、複数枚張り合せてセラミック基板を構
成し、前記第１のダイヤモンド薄膜と直交するセラミッ
ク基板の一面に第２のダイヤモンド薄膜を設け、第２の
ダイヤモンド薄膜上に抵抗膜を形成することを特徴とす
る請求項１記載の高周波抵抗器。4. A ceramic substrate is formed by laminating a plurality of ceramic plates having a first diamond thin film on one surface thereof, and a second diamond thin film is provided on one surface of the ceramic substrate orthogonal to the first diamond thin film. The high frequency resistor according to claim 1, wherein the high frequency resistor is provided and a resistive film is formed on the second diamond thin film.
構成されていることを特徴とする請求項１に記載の高周
波抵抗器。5. The high frequency resistor according to claim 1, wherein the heat radiator is composed of a heat sink for heat radiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03355596A JP3115071B2 (en) | 1991-12-24 | 1991-12-24 | High frequency resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03355596A JP3115071B2 (en) | 1991-12-24 | 1991-12-24 | High frequency resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05175001A true JPH05175001A (en) | 1993-07-13 |
| JP3115071B2 JP3115071B2 (en) | 2000-12-04 |
Family
ID=18444792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03355596A Expired - Lifetime JP3115071B2 (en) | 1991-12-24 | 1991-12-24 | High frequency resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3115071B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015129161A1 (en) * | 2014-02-27 | 2015-09-03 | パナソニックＩｐマネジメント株式会社 | Chip resistor |
| CN114038640A (en) * | 2021-09-18 | 2022-02-11 | 盛雷城精密电阻（江西）有限公司 | Ultrahigh frequency radio frequency resistor and production method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110233016B (en) * | 2019-05-29 | 2020-11-13 | 北京科技大学 | Method for manufacturing diamond-based thin film resistor element |
-
1991
- 1991-12-24 JP JP03355596A patent/JP3115071B2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015129161A1 (en) * | 2014-02-27 | 2015-09-03 | パナソニックＩｐマネジメント株式会社 | Chip resistor |
| CN105849827A (en) * | 2014-02-27 | 2016-08-10 | 松下知识产权经营株式会社 | Chip resistor |
| US20160343479A1 (en) * | 2014-02-27 | 2016-11-24 | Panasonic Intellectual Property Management Co., Ltd. | Chip resistor |
| JPWO2015129161A1 (en) * | 2014-02-27 | 2017-03-30 | パナソニックＩｐマネジメント株式会社 | Chip resistor |
| US10319501B2 (en) | 2014-02-27 | 2019-06-11 | Panasonic Intellectual Property Management Co., Ltd. | Chip resistor |
| CN114038640A (en) * | 2021-09-18 | 2022-02-11 | 盛雷城精密电阻（江西）有限公司 | Ultrahigh frequency radio frequency resistor and production method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3115071B2 (en) | 2000-12-04 |
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