CN114038640B - Ultrahigh frequency radio frequency resistor and production method thereof - Google Patents
Ultrahigh frequency radio frequency resistor and production method thereof Download PDFInfo
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- CN114038640B CN114038640B CN202111110443.2A CN202111110443A CN114038640B CN 114038640 B CN114038640 B CN 114038640B CN 202111110443 A CN202111110443 A CN 202111110443A CN 114038640 B CN114038640 B CN 114038640B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/024—Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being hermetically sealed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/08—Cooling, heating or ventilating arrangements
- H01C1/084—Cooling, heating or ventilating arrangements using self-cooling, e.g. fins, heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/242—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
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Abstract
The invention discloses an ultrahigh frequency radio frequency resistor and a production method thereof, wherein a diamond substrate is used as a substrate material, a heat dissipation substrate is compounded to improve heat dissipation efficiency, and meanwhile, a special packaging material is used to further improve heat dissipation performance of the radio frequency resistor; meanwhile, the production method utilizes liquid nitrogen cooling to control the temperature rise of laser resistance adjustment, laser seamless welding and laser cutting splinter, and prevents the resistance value variation of the resistance layer of the radio frequency resistor.
Description
Technical Field
The invention relates to the field of radio frequency resistors, in particular to an ultrahigh frequency radio frequency resistor and a production method thereof.
Background
The radio frequency resistor is an electronic component which utilizes high-frequency current to form high-frequency electromagnetic waves, and is a key element in the field of microwave communication.
The radio frequency resistor is increased along with the continuous increase of the working frequency, the reflection loss is increased, and the heating is more serious; in the prior art, the common substrate material of the radio frequency resistor is alumina or aluminum nitride, but the unstable effect of correspondingly different frequencies under different temperature rises can occur in the high-power load process due to the insufficient heat conductivity.
In the prior art, in order to solve the problem of insufficient heat conductivity of a substrate material, CN210606834U, a CVD diamond matrix chip resistor, discloses a radio frequency resistor with a diamond substrate as the substrate material. But the production process and the packaging material are not disclosed.
Disclosure of Invention
The invention discloses an ultrahigh frequency radio frequency resistor and a production method thereof, wherein a diamond substrate is used as a substrate material, a heat dissipation substrate is compounded to improve heat dissipation efficiency, and meanwhile, a special packaging material is used to further improve heat dissipation performance of the radio frequency resistor; meanwhile, the production method utilizes liquid nitrogen cooling to control the temperature rise of laser resistance adjustment, laser seamless welding and laser cutting splinter, and prevents the resistance value variation of the resistance layer of the radio frequency resistor.
An ultrahigh frequency radio frequency resistor comprises a heat dissipation substrate 1, a diamond substrate 2, a tantalum nitride resistor layer 3, a packaging layer 4 and a lead-out pin piece 5.
Further, the heat dissipation substrate 1 is a gold-plated copper plate.
The production method of the ultrahigh frequency radio frequency resistor comprises the following steps:
(1) Pressing the tantalum nitride metal foil on the diamond plate with the specified size under the vacuum condition of less than or equal to 10mbar at high temperature;
(2) The diamond plate prepared in the step (1) is subjected to laser cutting to adjust the resistance value according to requirements in a liquid nitrogen cooling environment by a photoetching process, and a split positioning groove is cut;
(3) After the resistance value is adjusted, continuously welding the tantalum nitride resistance layer and the lead-out pin sheet in a laser seamless welding mode in a liquid nitrogen cooling environment;
(4) After the laser seamless welding is finished, packaging by a packaging material under the room temperature condition, and forming a packaging layer after heating and curing;
(5) And (3) after packaging is finished, continuously positioning according to the split positioning groove cut in the step (2) in a liquid nitrogen cooling environment, and cutting again by laser to divide the diamond plate into single ultrahigh frequency radio frequency resistors.
The packaging material is high-temperature insulating sealing silica gel, the composition of the packaging material is double-component organic silicon sealing gel with the mass ratio of Sinwe 9210A:Sinwe 9210B of 10:1, the curing condition is that the packaging material is heated to 100-120 ℃, and the curing time is 6-8 h.
Further, 40-50% of modified filler is added into the packaging material, and the preparation method of the modified filler comprises the following steps:
(1) Dispersing nano silicon carbide with a certain mass and a particle size of 20-50 nm in 95% ethanol with a mass multiple of 5-8 times, adding nano aluminum oxide with a particle size of 20-50 nm with a mass of 2-3 times of the nano silicon carbide, and fully dispersing;
(2) Adding a silane coupling agent DL602 accounting for 2-3% of the mass of the nano silicon carbide, fully stirring until the system becomes thick, then adding organic polyborosilazane IOTA-9120 accounting for 0.3-0.5 times of the mass of the nano silicon carbide, and fully dispersing;
(3) And (3) desolventizing and solidifying the mixed solution prepared in the step (2) at 80-100 ℃ in a spray drying mode in an air atmosphere to prepare the modified filler.
Further, the modified filler is pre-dispersed in the component Sinwe 9210A.
The invention has the advantages that:
1. according to the invention, the diamond substrate is used as a substrate material, the heat dissipation substrate is compounded to improve the heat dissipation efficiency, and meanwhile, the special packaging material is used to further improve the heat dissipation performance of the radio frequency resistor;
2. because the temperature coefficient of tantalum nitride is relatively large, the production method of the invention utilizes liquid nitrogen cooling to control the temperature rise of laser resistance adjustment, laser seamless welding and laser cutting splinter, and prevents the resistance value variation of the resistance layer of the radio frequency resistor;
3. the invention utilizes nano silicon carbide to improve the heat conduction performance of the packaging material, but as the silicon carbide is a semiconductor material, the contact with the tantalum nitride resistor layer easily affects the resistance value and forms interference during high-frequency operation, the nano silicon carbide particles are coupled with nano aluminum oxide, and the surface layer of the coupled particles are sealed by organic polyborosilazane ceramic, so that the nano silicon carbide and the tantalum nitride resistor layer are effectively isolated, and meanwhile, the heat dissipation performance of the packaging layer and the bonding strength with a diamond substrate are greatly improved.
Drawings
FIG. 1 is a top view of an UHF RF resistor of the present invention;
FIG. 2 is a front view of an UHF RF resistor of the present invention;
FIG. 3 is a cross-sectional view of an UHF RF resistor of the present invention;
in the figure, 1-heat-dissipating substrate, 2-diamond substrate, 3-tantalum nitride resistor layer, 4-packaging layer, 5-lead tab
Detailed Description
Example 1
The ultra-high frequency radio frequency resistor comprises a heat dissipation substrate 1, a diamond substrate 2, a tantalum nitride resistor layer 3, a packaging layer 4 and a lead-out pin sheet 5; the heat dissipation substrate 1 is a gold-plated copper plate.
The production method of the ultrahigh frequency radio frequency resistor comprises the following steps:
(1) Pressing the tantalum nitride metal foil directly on the diamond plate with the specified size under the vacuum condition of 1mbar at high temperature;
(2) The diamond plate prepared in the step (1) is subjected to laser cutting to adjust the resistance value according to requirements in a liquid nitrogen cooling environment by a photoetching process, and a split positioning groove is cut;
(3) After the resistance value is adjusted, continuously welding the tantalum nitride resistance layer and the lead-out pin sheet in a laser seamless welding mode in a liquid nitrogen cooling environment;
(4) After the laser seamless welding is finished, packaging by a packaging material under the room temperature condition, and forming a packaging layer after heating and curing;
(5) And (3) after packaging is finished, continuously positioning according to the split positioning groove cut in the step (2) in a liquid nitrogen cooling environment, and cutting again by laser to divide the diamond plate into single ultrahigh frequency radio frequency resistors.
The packaging material is a double-component organic silicon sealant with the composition of Sinwe 9210A:Sinwe 9210B and the mass ratio of 10:1, and a modified filler with the mass of 40% of the double-component organic silicon sealant, wherein the modified filler is pre-dispersed in the component Sinwe 9210A.
The curing condition is heating to 120 ℃ and the curing time is 6 hours.
The preparation method of the modified filler comprises the following steps:
(1) Taking a certain mass of nano silicon carbide with the particle size of 50nm, dispersing the nano silicon carbide in 95% ethanol with the mass multiple of 5 times, then adding nano aluminum oxide with the particle size of 50nm with the mass of 3 times of the nano silicon carbide, and fully dispersing;
(2) Adding a silane coupling agent DL602 accounting for 3% of the mass of the nano silicon carbide, fully stirring until a system becomes thick, then adding organic polyborosilazane IOTA-9120 accounting for 0.3 times of the mass of the nano silicon carbide, and fully dispersing;
(3) And (3) desolventizing and solidifying the mixed solution prepared in the step (2) at 80 ℃ in a spray drying mode in an air atmosphere to prepare the modified filler.
Example 2
The ultra-high frequency radio frequency resistor comprises a heat dissipation substrate 1, a diamond substrate 2, a tantalum nitride resistor layer 3, a packaging layer 4 and a lead-out pin sheet 5; the heat dissipation substrate 1 is a gold-plated copper plate.
The production method of the ultrahigh frequency radio frequency resistor comprises the following steps:
(1) Pressing the tantalum nitride metal foil directly on the diamond plate with the specified size under the vacuum condition of 3mbar at high temperature;
(2) The diamond plate prepared in the step (1) is subjected to laser cutting to adjust the resistance value according to requirements in a liquid nitrogen cooling environment by a photoetching process, and a split positioning groove is cut;
(3) After the resistance value is adjusted, continuously welding the tantalum nitride resistance layer and the lead-out pin sheet in a laser seamless welding mode in a liquid nitrogen cooling environment;
(4) After the laser seamless welding is finished, packaging by a packaging material under the room temperature condition, and forming a packaging layer after heating and curing;
(5) And (3) after packaging is finished, continuously positioning according to the split positioning groove cut in the step (2) in a liquid nitrogen cooling environment, and cutting again by laser to divide the diamond plate into single ultrahigh frequency radio frequency resistors.
The packaging material is a double-component organic silicon sealant with the composition of Sinwe 9210A:Sinwe 9210B and the mass ratio of 10:1, and a modified filler with the mass of 45% of the double-component organic silicon sealant, wherein the modified filler is pre-dispersed in the component Sinwe 9210A.
The curing condition is that the temperature is heated to 110 ℃ and the curing time is 8 hours.
The preparation method of the modified filler comprises the following steps:
(1) Dispersing nano silicon carbide with a certain mass and a particle size of 30nm in 95% ethanol with a mass multiple of 6 times, and then adding nano aluminum oxide with a particle size of 30nm with a mass of 2.2 times that of the nano silicon carbide, and fully dispersing;
(2) Adding a silane coupling agent DL602 with the mass of 2.5% of the nano silicon carbide, fully stirring until the system becomes thick, then adding organic polyborosilazane IOTA-9120 with the mass of 0.4 times of the nano silicon carbide, and fully dispersing;
(3) And (3) desolventizing and solidifying the mixed solution prepared in the step (2) at 100 ℃ in a spray drying mode in an air atmosphere to prepare the modified filler.
Example 3
The ultra-high frequency radio frequency resistor comprises a heat dissipation substrate 1, a diamond substrate 2, a tantalum nitride resistor layer 3, a packaging layer 4 and a lead-out pin sheet 5; the heat dissipation substrate 1 is a gold-plated copper plate.
The production method of the ultrahigh frequency radio frequency resistor comprises the following steps:
(1) Pressing the tantalum nitride metal foil directly on the diamond plate with the specified size under the vacuum condition of 10mbar at high temperature;
(2) The diamond plate prepared in the step (1) is subjected to laser cutting to adjust the resistance value according to requirements in a liquid nitrogen cooling environment by a photoetching process, and a split positioning groove is cut;
(3) After the resistance value is adjusted, continuously welding the tantalum nitride resistance layer and the lead-out pin sheet in a laser seamless welding mode in a liquid nitrogen cooling environment;
(4) After the laser seamless welding is finished, packaging by a packaging material under the room temperature condition, and forming a packaging layer after heating and curing;
(5) And (3) after packaging is finished, continuously positioning according to the split positioning groove cut in the step (2) in a liquid nitrogen cooling environment, and cutting again by laser to divide the diamond plate into single ultrahigh frequency radio frequency resistors.
The packaging material is a double-component organic silicon sealant with the composition of Sinwe 9210A:Sinwe 9210B and the mass ratio of 10:1, and a modified filler with the mass of 50% of the double-component organic silicon sealant, wherein the modified filler is pre-dispersed in the component Sinwe 9210A.
The curing condition is heating to 100 ℃ and the curing time is 8 hours.
The preparation method of the modified filler comprises the following steps:
(1) Dispersing nano silicon carbide with the particle size of 20nm in 95% ethanol with the mass multiple of 8 times, adding nano aluminum oxide with the particle size of 20nm with the mass of 2 times of the mass of the nano silicon carbide, and fully dispersing;
(2) Adding a silane coupling agent DL602 accounting for 2% of the mass of the nano silicon carbide, fully stirring until the system becomes thick, then adding organic polyborosilazane IOTA-9120 accounting for 0.5 times of the mass of the nano silicon carbide, and fully dispersing;
(3) And (3) desolventizing and solidifying the mixed solution prepared in the step (2) at 100 ℃ in a spray drying mode in an air atmosphere to prepare the modified filler.
Comparative example 1
A radio frequency resistor is not compounded with a heat dissipation substrate, and the rest of the production method is the same as in the embodiment 2.
Comparative example 2
A radio frequency resistor, the encapsulation material is free of modified filler, and the rest of the production method is the same as in the example 2.
Comparative example 3
A radio frequency resistor is prepared from nano silicon carbide as filler and the rest of its production method is the same as in example 2.
Comparative example 4
A radio frequency resistor is prepared by using nano alumina as all the filler and the rest of the production method is the same as in the example 2.
Comparative example 5
A radio frequency resistor is prepared by using KH792 as a silane coupling agent for modified filler, and the rest of the preparation method is the same as in example 2.
Comparative example 6
A radio frequency resistor, wherein the modified filler is not added with organic polyborosilazane, and the rest of the production method is the same as in the example 2.
And (3) performance detection:
according to the production methods of the above examples and comparative examples, the sizes of the diamond substrates used for the radio frequency resistors are unified to be 1.6mm by 0.8mm by 0.38mm, the sizes of the heat dissipation substrates are 3.2mm by 1.0mm, the radio frequency resistors are enabled to continuously operate for 4 hours under the conditions of 50W of power and 30GHz of operating frequency, the temperature and standing wave ratio of the radio frequency resistors during stable operation are tested, and the test results are shown in Table 1;
the radio frequency resistors produced in the above examples and comparative examples continuously increase the operating frequency in a stable operating state, the cut-off frequency of the radio frequency resistor is tested, and the test results are shown in table 1;
the packaging materials used in the examples and comparative examples were tested for peel strength, thermal conductivity and elongation at break from the diamond substrate, and 5 groups of the average values were tested; and the test is carried out again after the continuous operation is carried out for 72 hours under the conditions of 50W of power and 30GHz of operating frequency, and the test results are shown in Table 2.
TABLE 1
TABLE 2
As can be seen from the table, the diamond substrate is used as the substrate material, and the composite heat dissipation substrate can further improve the heat dissipation performance of the radio frequency resistor; the modified filler can effectively improve the heat conduction performance of the packaging material, and can prevent silicon carbide from affecting the electrical performance of the ultrahigh frequency radio frequency resistor; and the modified filler is beneficial to improving the performance stability of the packaging material, and can effectively relieve the aging speed of the packaging material.
Finally: the foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (7)
1. An ultra-high frequency radio frequency resistor, characterized by: the ultrahigh frequency radio frequency resistor comprises a heat dissipation substrate, a diamond substrate, a tantalum nitride resistor layer, a packaging layer and a lead-out pin piece;
the production method of the ultrahigh frequency radio frequency resistor comprises the following steps:
(1) Pressing the tantalum nitride metal foil on the diamond plate with the specified size under the vacuum condition of less than or equal to 10mbar at high temperature;
(2) The diamond plate prepared in the step (1) is subjected to laser cutting to adjust the resistance value according to requirements in a liquid nitrogen cooling environment by a photoetching process, and a split positioning groove is cut;
(3) After the resistance value is adjusted, continuously welding the tantalum nitride resistance layer and the lead-out pin sheet in a laser seamless welding mode in a liquid nitrogen cooling environment;
(4) After the laser seamless welding is finished, packaging by a packaging material under the room temperature condition, and forming a packaging layer after heating and curing;
(5) And (3) after packaging is finished, continuously positioning according to the split positioning groove cut in the step (2) in a liquid nitrogen cooling environment, and cutting again by laser to divide the diamond plate into single ultrahigh frequency radio frequency resistors.
2. The uhf radio frequency resistor of claim 1, wherein: the heat dissipation substrate is a gold-plated red copper plate.
3. The uhf radio frequency resistor of claim 1, wherein: the packaging material is high-temperature insulating sealing silica gel, and the composition of the packaging material is double-component organic silicon sealing gel with the mass ratio of Sinwe 9210A:Sinwe 9210B of 10:1.
4. The uhf radio frequency resistor of claim 3, further comprising: the curing condition of the packaging material is that the packaging material is heated to 100-120 ℃ and the curing time is 6-8 h.
5. The uhf radio frequency resistor of claim 3, further comprising: and 40-50% of modified filler by mass is added into the packaging material.
6. The uhf rf resistor of claim 5, wherein: the preparation method of the modified filler comprises the following steps:
(1) Dispersing nano silicon carbide with a certain mass and a particle size of 20-50 nm in 95% ethanol with a mass multiple of 5-8 times, adding nano aluminum oxide with a particle size of 20-50 nm with a mass of 2-3 times of the nano silicon carbide, and fully dispersing;
(2) Adding a silane coupling agent DL602 accounting for 2-3% of the mass of the nano silicon carbide, fully stirring until the system becomes thick, then adding organic polyborosilazane IOTA-9120 accounting for 0.3-0.5 times of the mass of the nano silicon carbide, and fully dispersing;
(3) And (3) desolventizing and solidifying the mixed solution prepared in the step (2) at 80-100 ℃ in a spray drying mode in an air atmosphere to prepare the modified filler.
7. The uhf rf resistor of claim 5 or 6, wherein: the method is characterized in that: the modified filler is pre-dispersed in the component Sinwe 9210A.
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59218712A (en) * | 1983-05-27 | 1984-12-10 | Toshiba Corp | Protective circuit for superconductive coil |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03131003A (en) * | 1989-10-16 | 1991-06-04 | Kobe Steel Ltd | Diamond thin-film thermistor |
| JPH03283601A (en) * | 1990-03-30 | 1991-12-13 | Kanagawa Pref Gov | Thin diamond film temperature sensor |
| JP3115071B2 (en) * | 1991-12-24 | 2000-12-04 | 東京電波株式会社 | High frequency resistor |
| KR100317569B1 (en) * | 1995-07-13 | 2001-12-24 | 다마호리 다메히코 | Composition for forming ceramic substances and process for producing ceramic substances |
| US5776235A (en) * | 1996-10-04 | 1998-07-07 | Dow Corning Corporation | Thick opaque ceramic coatings |
| DE10220360B4 (en) * | 2002-05-07 | 2006-09-21 | Rosenberger Hochfrequenztechnik Gmbh & Co. Kg | Use of a diamond-based electrical resistance device |
| CN209249223U (en) * | 2018-12-29 | 2019-08-13 | 上海华湘计算机通讯工程有限公司 | A kind of high-power diamond resistance |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59218712A (en) * | 1983-05-27 | 1984-12-10 | Toshiba Corp | Protective circuit for superconductive coil |
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