CN114026703A - 量子点发光结构及其制作方法、阵列基板和显示装置 - Google Patents

量子点发光结构及其制作方法、阵列基板和显示装置 Download PDF

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CN114026703A
CN114026703A CN202080000717.XA CN202080000717A CN114026703A CN 114026703 A CN114026703 A CN 114026703A CN 202080000717 A CN202080000717 A CN 202080000717A CN 114026703 A CN114026703 A CN 114026703A
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electron transport
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quantum dot
transport layer
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CN114026703B (zh
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李东
陈卓
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BOE Technology Group Co Ltd
Beijing BOE Technology Development Co Ltd
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Beijing BOE Technology Development Co Ltd
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Abstract

一种量子点发光结构(100)及制作方法、阵列基板(200)和显示装置(300)。量子点发光结构(100)包括量子点发光层(110)、电极(140)和位于量子点发光层(110)和电极(140)之间的电子传输层(120);量子点发光结构(100)还包括电子阻挡层(130),位于电子传输层(120)之中。通过在电子传输层(120)中增加电子阻挡层(130),可减少从电极(140)注入电子传输层(120)中的电子,进而可平衡量子点发光层(110)中的载流子浓度,提高量子点发光结构(100)的发光效率。

Description

PCT国内申请,说明书已公开。

Claims (39)

  1. PCT国内申请,权利要求书已公开。
CN202080000717.XA 2020-05-12 2020-05-12 量子点发光结构及其制作方法、阵列基板和显示装置 Active CN114026703B (zh)

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KR20230112196A (ko) * 2022-01-19 2023-07-27 삼성디스플레이 주식회사 양자점 조성물, 이를 이용한 발광 소자 및 상기 발광 소자를 포함한 전자 장치
WO2024044873A1 (zh) * 2022-08-29 2024-03-07 北京京东方技术开发有限公司 发光器件及其制备方法、显示面板、显示装置

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CN107342367A (zh) * 2017-06-28 2017-11-10 深圳市华星光电技术有限公司 量子点电致发光器件及其制作方法

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Publication number Priority date Publication date Assignee Title
US20140158993A1 (en) * 2012-12-12 2014-06-12 Woo-Young So Phosphorescence-sensitizing fluorescence material system
CN103904178A (zh) * 2014-04-11 2014-07-02 浙江大学 量子点发光器件
CN105810848A (zh) * 2016-03-16 2016-07-27 京东方科技集团股份有限公司 一种量子点层的制备方法及含有量子点层的qled显示装置、制备方法
CN105679958A (zh) * 2016-04-20 2016-06-15 京东方科技集团股份有限公司 电致发光器件及其制作方法、显示装置
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US20220123168A1 (en) 2022-04-21
EP4152418A1 (en) 2023-03-22
CN114026703B (zh) 2023-06-16
WO2021226818A1 (zh) 2021-11-18
KR20230009866A (ko) 2023-01-17

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