CN114026681A - 晶片载置台 - Google Patents

晶片载置台 Download PDF

Info

Publication number
CN114026681A
CN114026681A CN202080047772.4A CN202080047772A CN114026681A CN 114026681 A CN114026681 A CN 114026681A CN 202080047772 A CN202080047772 A CN 202080047772A CN 114026681 A CN114026681 A CN 114026681A
Authority
CN
China
Prior art keywords
power supply
supply terminal
hole
electrostatic chuck
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080047772.4A
Other languages
English (en)
Inventor
相川贤一郎
竹林央史
久野达也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of CN114026681A publication Critical patent/CN114026681A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

晶片载置台具备：静电卡盘，其在陶瓷烧结体中埋设有静电吸附用电极；冷却构件，其粘接于静电卡盘的与晶片载置面相反侧的面上，对静电卡盘进行冷却；供电端子用孔，其在厚度方向上贯通冷却构件；以及供电端子，其从静电卡盘的与晶片载置面相反侧的面与静电吸附用电极接合，并插入于供电端子用孔中。供电端子中的插入于供电端子用孔中的部分的外周面被涂覆有绝缘材料的绝缘薄膜覆盖。

Description

晶片载置台
技术领域
本发明涉及晶片载置台。
背景技术
以往，在半导体晶片的传送、曝光、CVD等成膜工艺、清洗、蚀刻、切割等微细加工中，使用吸附保持晶片的晶片载置台。作为这样的晶片载置台，如专利文献1所示，已知有下述晶片载置台，其具备在陶瓷烧结体中埋设有静电吸附用电极的静电卡盘、对该静电卡盘进行冷却的冷却构件、以及插入到在厚度方向上贯通冷却构件的供电端子用孔并与静电吸附用电极接合的供电端子。静电卡盘和冷却构件经由粘接层粘接。供电端子的外周被绝缘材料包围。在图2中示出这样的晶片载置台的供电端子周边的结构的一例。在供电端子中的插入冷却构件的供电端子用孔中的部分的外周面粘接有由绝缘材料形成的陶瓷套管。即，在使供电端子插通于在上下方向贯通陶瓷套管的供电端子用孔中的状态下，利用粘接层将供电端子固定在该孔内。陶瓷套管通过切削加工等制作，因此需要一定程度的厚度。
现有技术文献
专利文献
专利文献1：日本专利第4034145号公报
发明内容
发明所要解决的课题
但是，如果陶瓷套管较厚，则开设在冷却构件上的供电端子用孔的直径也需要变大，有可能损害晶片载置面、晶片的均热性。即，开设于冷却构件上的供电端子用孔是对于来自等离子体的热输入的散热(图2的箭头)不朝向正下方进行的特异部位，但如果该孔的直径大，则特异部位也变大，因此晶片载置面、晶片的均热性受损。
本发明是为了解决这样的课题而完成的，其主要目的在于提高晶片载置面、晶片的均热性。
用于解决课题的手段
本发明的晶片载置台，具备：
静电卡盘，其在陶瓷烧结体中埋设有静电吸附用电极；
冷却构件，其粘接或接合于所述静电卡盘的与晶片载置面相反侧的面上，对所述静电卡盘进行冷却；
供电端子用孔，其在厚度方向上贯通所述冷却构件；以及，
供电端子，其从所述静电卡盘的与晶片载置面相反侧的面接合于所述静电吸附用电极，且插入于所述供电端子用孔中，
所述供电端子中的插入于所述供电端子用孔中的部分的外周面被涂覆有绝缘材料的绝缘薄膜覆盖。
在该晶片载置台中，供电端子中的插入于供电端子用孔中的部分的外周面被涂覆有绝缘材料的绝缘薄膜覆盖。因此，能够使设置于冷却构件的供电端子用孔的直径与供电端子中被绝缘薄膜覆盖的部分的直径相应地变小。尽管供电端子用孔成为对于来自等离子体的热输入的散热不朝向正下方进行的特异部位，但由于能够减小该供电端子用孔的直径，因此能够缩小特异部位，进而提高晶片载置面、晶片的均热性。
在本发明的晶片载置台中，也可以是，所述绝缘薄膜是气溶胶沉积(AD)膜或喷镀膜。特别是，AD法(包括等离子体AD法)适于高精度地形成微细的陶瓷粒子的薄的膜。另外，AD法由于能够通过冲击固化现象使陶瓷粒子成膜，因此不需要在高温下烧结陶瓷粒子。
在本发明的晶片载置台中，也可以是，所述绝缘薄膜的厚度为10μm以上且200μm以下。这样，能够进一步减小供电端子用孔的直径。
在本发明的晶片载置台中，也可以是，所述绝缘薄膜的外表面与所述供电端子用孔的内表面之间的间隙为1mm以下。这样，能够进一步减小供电端子用孔的直径。
附图说明
图1是本实施方式的晶片载置台的主要部分的纵剖视图。
图2是以往的晶片载置台的主要部分的纵剖视图。
具体实施方式
以下，参照附图对本发明的优选实施方式进行说明。图1是本实施方式的晶片载置台的主要部分的纵剖视图。
如图1所示，晶片载置台具备静电卡盘、冷却构件、供电端子用孔和供电端子。静电卡盘在圆板状的陶瓷烧结体中埋设有静电吸附用电极，若对静电吸附用电极施加电压，则静电吸附载置于静电卡盘的晶片载置面上的晶片(未图示)。冷却构件是在内部具有制冷剂通路(未图示)的金属制的构件，对静电卡盘进行冷却。供电端子用孔在厚度方向上贯通冷却构件。供电端子从静电卡盘的与晶片载置面相反侧的面钎焊接合于静电吸附用电极，并插入于供电端子用孔中。作为供电端子的材质，例如可举出钼、钛、镍等。供电端子中的插入于供电端子用孔中的部分的外周面被涂覆有绝缘材料(例如氧化铝)的绝缘薄膜覆盖。
在以上说明的本实施方式的晶片载置台中，供电端子中的插入于供电端子用孔中的部分的外周面被涂覆有绝缘材料的绝缘薄膜覆盖。因此，能够使设置于冷却构件的供电端子用孔的直径与供电端子中被绝缘薄膜覆盖的部分的直径相应地变小。尽管供电端子用孔成为对于来自等离子体的热输入的散热不朝向正下方进行的特异部位，但由于能够减小该供电端子用孔的直径，因此能够缩小特异部位，进而提高晶片载置面、晶片的均热性。
另外，绝缘薄膜优选为AD膜或喷镀膜，更优选为AD膜。AD法适于高精度地形成微细的陶瓷粒子的薄的膜。另外，AD法由于能够通过冲击固化现象使陶瓷粒子成膜，因此不需要在高温下烧结陶瓷粒子。
进而，绝缘薄膜的厚度优选为10μm以上且200μm以下。另外，绝缘薄膜的外表面与供电端子用孔的内表面的间隙优选为1mm以下。这样，能够进一步减小供电端子用孔的直径。
需要说明的是，静电卡盘中也可以埋设有加热器电极(电阻发热体)，也可以埋设有RF电极。
本申请将2019年6月28日申请的日本专利申请第2019-121490号作为优先权主张的基础，通过引用将其全部内容包含在本说明书中。
产业上的利用可能性
本发明能够用于例如半导体晶片的传送、曝光、CVD等成膜工艺、清洗、蚀刻、切割等微细加工。

Claims (4)

1.一种晶片载置台，具备：
静电卡盘，其在陶瓷烧结体中埋设有静电吸附用电极；
冷却构件，其粘接或接合于所述静电卡盘的与晶片载置面相反侧的面上，对所述静电卡盘进行冷却；
供电端子用孔，其在厚度方向上贯通所述冷却构件；以及
供电端子，其从所述静电卡盘的与晶片载置面相反侧的面接合于所述静电吸附用电极，且插入于所述供电端子用孔中，
所述供电端子中的插入于所述供电端子用孔中的部分的外周面被涂覆有绝缘材料的绝缘薄膜覆盖。
2.根据权利要求1所述的晶片载置台，所述绝缘薄膜为气溶胶沉积膜或喷镀膜。
3.根据权利要求1或2所述的晶片载置台，所述绝缘薄膜的厚度为10μm以上且200μm以下。
4.根据权利要求1～3中任一项所述的晶片载置台，所述绝缘薄膜的外表面与所述供电端子用孔的内表面之间的间隙为1mm以下。
CN202080047772.4A 2019-06-28 2020-06-10 晶片载置台 Pending CN114026681A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-121490 2019-06-28
JP2019121490 2019-06-28
PCT/JP2020/022832 WO2020261992A1 (ja) 2019-06-28 2020-06-10 ウエハ載置台

Publications (1)

Publication Number Publication Date
CN114026681A true CN114026681A (zh) 2022-02-08

Family

ID=74061068

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080047772.4A Pending CN114026681A (zh) 2019-06-28 2020-06-10 晶片载置台

Country Status (5)

Country Link
US (1) US11948825B2 (zh)
JP (1) JP7214868B2 (zh)
KR (1) KR102632768B1 (zh)
CN (1) CN114026681A (zh)
WO (1) WO2020261992A1 (zh)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07297265A (ja) * 1994-04-26 1995-11-10 Shin Etsu Chem Co Ltd 静電チャック
JP4272373B2 (ja) * 2001-12-11 2009-06-03 太平洋セメント株式会社 静電チャック
JP4034145B2 (ja) 2002-08-09 2008-01-16 住友大阪セメント株式会社 サセプタ装置
JP4346877B2 (ja) 2002-08-29 2009-10-21 東京エレクトロン株式会社 静電吸着装置および処理装置
JP2007258615A (ja) 2006-03-24 2007-10-04 Ngk Insulators Ltd 静電チャック
US20080062609A1 (en) * 2006-08-10 2008-03-13 Shinji Himori Electrostatic chuck device
JP2008160093A (ja) 2006-11-29 2008-07-10 Toto Ltd 静電チャック、静電チャックの製造方法および基板処理装置
JP5604888B2 (ja) * 2009-12-21 2014-10-15 住友大阪セメント株式会社 静電チャックの製造方法
JP6119430B2 (ja) * 2013-05-31 2017-04-26 住友大阪セメント株式会社 静電チャック装置
US10410897B2 (en) * 2014-06-23 2019-09-10 Ngk Spark Plug Co., Ltd. Electrostatic chuck
JP6202111B2 (ja) * 2014-11-20 2017-09-27 住友大阪セメント株式会社 静電チャック装置
JP6108051B1 (ja) * 2015-09-25 2017-04-05 住友大阪セメント株式会社 静電チャック装置
US11107719B2 (en) * 2016-01-12 2021-08-31 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device and method for manufacturing electrostatic chuck device
US10923381B2 (en) * 2016-01-19 2021-02-16 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device
CN111918854B (zh) * 2018-03-30 2023-03-28 住友大阪水泥股份有限公司 陶瓷基体及基座

Also Published As

Publication number Publication date
US11948825B2 (en) 2024-04-02
JP7214868B2 (ja) 2023-01-30
WO2020261992A1 (ja) 2020-12-30
KR102632768B1 (ko) 2024-02-01
US20210398840A1 (en) 2021-12-23
KR20210141641A (ko) 2021-11-23
JPWO2020261992A1 (zh) 2020-12-30

Similar Documents

Publication Publication Date Title
CN110770891B (zh) 静电卡盘及其制法
TWI653706B (zh) 靜電卡盤裝置
JP4881319B2 (ja) 基板を空間的かつ時間的に温度制御するための装置
US10622239B2 (en) Electrostatic chuck device
US11348819B2 (en) Electrostatic chuck device
JP2014236047A (ja) 静電チャック装置
US20180053678A1 (en) Electrostatic chuck device
US11328948B2 (en) Electrostatic chuck device and method of manufacturing electrostatic chuck device
CN114521288B (zh) 用于半导体晶片固持器的热扩散器
US20220259727A1 (en) Substrate heating device, substrate heating method, and method of manufacturing substrate heater
CN114026681A (zh) 晶片载置台
CN111446197B (zh) 静电吸盘和包括其的静电吸盘装置
JP2019169629A (ja) 基板固定装置
KR102363647B1 (ko) 베이스 플레이트 구조체 및 그 제조방법, 기판 고정 장치
US20220030669A1 (en) Ceramic heater with shaft
KR101397132B1 (ko) 정전척의 제조방법
WO2023145839A1 (ja) 吸着基板
JP6882040B2 (ja) 保持装置
CN114026957A (zh) 带轴的陶瓷加热器
CN114709158A (zh) 静电吸盘和基板固定装置
JP2022094466A (ja) 静電チャック装置
CN113748500A (zh) 静电卡盘
KR20100090560A (ko) 전류 억제구조를 구비한 존슨 라벡형 정전척 및 그 제조방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination