CN114023635A - 一种提效降本的太阳能电池硼扩散方法 - Google Patents
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 37
- 238000009792 diffusion process Methods 0.000 title claims abstract description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 5
- 238000000137 annealing Methods 0.000 claims description 11
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- 239000012535 impurity Substances 0.000 claims description 9
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- 239000012299 nitrogen atmosphere Substances 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
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- 238000004140 cleaning Methods 0.000 claims description 2
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- 238000007599 discharging Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 238000011065 in-situ storage Methods 0.000 claims description 2
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- 229910052760 oxygen Inorganic materials 0.000 claims description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000012423 maintenance Methods 0.000 abstract description 3
- 230000004913 activation Effects 0.000 abstract description 2
- 238000009835 boiling Methods 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract description 2
- 239000002344 surface layer Substances 0.000 abstract description 2
- 239000007795 chemical reaction product Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 4
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 3
- 229910000085 borane Inorganic materials 0.000 description 3
- 150000001638 boron Chemical class 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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Abstract
本发明涉及一种提效降本的太阳能电池硼扩散方法，兼顾提升效率同时，改善管式硼扩散维护成本偏高的问题，具体包括：步骤一：N型硅片正面生长硼掺杂非晶硅；步骤二：非晶硅高温晶化并完成硼掺杂；本发明提高晶硅表层掺硼激活率改善效率，同时避开了常规管式硼扩散预沉积过程中，由于反应产物B2O3的沸点在1600℃以上，反应产物B与始终处于液态的B2O3，扩散过程中对石英器件的腐蚀严重，扩散结束后在恒温区外快速冷却凝固，易造成尾管堵塞，引起扩散机台石英炉门与石英炉管的粘连，造成维护成本高的问题。
Description
技术领域
本发明属于太阳能电池技术领域，具体涉及一种提效降本的太阳能电池硼扩散方法。
背景技术
目前P型晶硅电池占据晶硅电池市场的绝对份额。然而，不断追求效率提升和成本降低是光伏行业永恒的主题。N型单晶硅较常规的P型单晶硅具有少子寿命高、光致衰减小等优点，具有更大的效率提升空间，同时，N型单晶组件具有弱光响应好、温度系数低等优点。因此，N型单晶系统具有发电量高和可靠性高的双重优势。
硼扩散是N型电池核心工序。与磷扩散相比硼原子在硅中扩散速率要低，所以要达到预期的掺杂浓度及深度，硼扩散工艺温度更高、时间更长，在硅浅表层更易出现“死层”现象，制约着掺硼激活率，直接影响效率表现。再者在硼扩散工艺过程中由于直接作用在硅片的B2O3硅沸点达到1860℃，而扩散工艺温度一般在900℃～1000℃之间，B2O3在工艺过程中以液态的形式与太阳能电池片接触，导致太阳能电池片的工艺结果均匀性较差。另一方面，由于副产物BSG(硼硅玻璃)的存在，致使石英件存在粘黏现象，导致硼扩散设备存在维护周期短、成本高等问题严重制约着N型电池发展。
发明内容
本发明的目的在于提供一种提效降本的太阳能电池硼扩散方法，以解决上述背景技术中提出的问题。
为解决上述技术问题，本发明提供的技术方案为：一种提效降本的太阳能电池硼扩散方法，具体包括以下步骤：
步骤一：采用PECVD的方式在N型硅片上沉积掺杂非晶硅层，考虑到管式硼扩散，硼掺杂非晶硅沉积厚度在100nm-200nm，为使得硼原子均匀分布在膜层中，生长非晶硅层过程同时通入硼源；
步骤二：将步骤一后的硅片进行高温退火并完成硼掺杂：
1)将硅片送入炉管，氮气氛围下升温至900℃-1000℃，N2流量控制在1000-3000sccm；
2)氮气氛围下掺杂非晶硅层进行高温晶化及杂质分布，温度稳定在900℃-1000℃，N2流量控制在1000sccm-3000sccm，时间控制在30min-200min，晶化过程实现硼原子在硅中的原位掺杂，达到替位扩散效果，激活杂质硼原子，多余的硼原子以间隙/替位扩散的方式继续向硅中扩散；
3)氮、氧气氛围下掺杂晶硅层进行杂质再分布，温度稳定在900℃-1000℃，N2流量控制在1000sccm-3000sccm，O2流量控制在1000sccm-3000sccm，时间控制在20min-40min，降低表面杂质浓度同时实现结深要求；
4)氮气氛围下降温退火至800℃并出管，N2流量控制在1000sccm-3000sccm。
作为一种优选方案，所述N型硅片作为衬底材料，通过清洗制绒使硅片表面产生金字塔状表面结构。
作为一种优选方案，所述正面硼掺杂非晶硅厚度在100nm-500nm，掺杂源为BH3。
作为一种优选方案，所述非晶硅高温退火并完成硼掺杂，退火温度在900℃-1000℃，N2流量在1000sccm-3000sccm，O2流量在1000sccm-3000sccm。
本发明优点在于：
1)本发明提出一种新型的硼扩散，用以提高硼扩散质量以及解决硼扩散副产物对于机台备件的损伤降低运营成本。
2)本发明采用先沉积掺硼非晶硅再退火扩散的方式，让硼源沉积在非晶硅中，保证了硅片在硼掺杂过程中，非激活硼的含量较少，可有效减少复合。
3)本发明采用先沉积掺硼非晶硅再退火扩散的方式，不会产生B2O3副产物对于石英件无损伤，可有效降低硼扩运营成本。
具体实施方式
下面用具体实施例说明本发明，并不是对本发明的限制。
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合实施例，对本申请进行描述和说明。应当理解，此处所描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。基于本申请提供的实施例，本领域普通技术人员在没有作出创造性劳动的前提下所获得的所有其他实施例，都属于本申请保护的范围。
实施例
一种提效降本的太阳能电池硼扩散方法，包括以下步骤：
1)将制绒后的片子用PECVD等离子增强化学气相沉积法，恒温450℃，在管压1800mTor下通入SiH4以及BH3沉积非晶硅，通过调整硅烷/硼烷的比例，得到掺杂浓度接近在2E20cm-3，得到监控约在120nm厚的掺杂非晶硅层；
2)将工艺1)后的硅片放入高温退火炉中；
3)升温：持续通入3000sccm的N2下升温到650℃，并保持10min；
4)升温：持续通入3000sccm的N2下升温到950℃；
5)退火：持续通入3000sccm的N2，温度950℃条件下恒温50min，掺杂非晶硅晶化过程中兼备杂质扩散；
6)推进：在950℃的条件下恒温30min并同时通入3000sccm的O2；
7)降温：保持通入3000sccm的N2，降温至800℃。
8)出舟。
对比例
对比例与实施例以表1的形式呈现：
表1
表2
从表2的对比结果来看，本发明的一种提效降本的太阳能电池硼扩散方法，有更优的电性表现，采用先沉积掺硼非晶硅再退火扩散的方式，让硼源沉积在非晶硅中，保证了硅片在硼掺杂过程中，非激活硼的含量较少，可有效减少复合。另外，本发明采用先沉积掺硼非晶硅再退火扩散的方式，不会产生B2O3副产物对于石英件无损伤，可有效降低硼扩运营成本。
以上所述，仅为本发明较佳的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，根据本发明的技术方案及其发明构思加以等同替换或改变，都应涵盖在本发明的保护范围之内。
Claims (4)
1.一种提效降本的太阳能电池硼扩散方法，其特征在于，具体包括以下步骤：
步骤一：采用PECVD的方式在N型硅片上沉积掺杂非晶硅层，考虑到管式硼扩散，硼掺杂非晶硅沉积厚度在100nm-200nm，为使得硼原子均匀分布在膜层中，生长非晶硅层过程同时通入硼源；
步骤二：将步骤一后的硅片进行高温退火并完成硼掺杂：
1)将硅片送入炉管，氮气氛围下升温至900℃-1000℃，N2流量控制在1000-3000sccm；
2)氮气氛围下掺杂非晶硅层进行高温晶化及杂质分布，温度稳定在900℃-1000℃，N2流量控制在1000sccm-3000sccm，时间控制在30min-200min，晶化过程实现硼原子在硅中的原位掺杂，达到替位扩散效果，激活杂质硼原子，多余的硼原子以间隙/替位扩散的方式继续向硅中扩散；
3)氮、氧气氛围下掺杂晶硅层进行杂质再分布，温度稳定在900℃-1000℃，N2流量控制在1000sccm-3000sccm，O2流量控制在1000sccm-3000sccm，时间控制在20min-40min，降低表面杂质浓度同时实现结深要求；
4)氮气氛围下降温退火至800℃并出管，N2流量控制在1000sccm-3000sccm。
2.根据权利要求1所述的一种提效降本的太阳能电池硼扩散方法，其特征在于：所述N型硅片作为衬底材料，通过清洗制绒使硅片表面产生金字塔状表面结构。
3.根据权利要求1所述的一种提效降本的太阳能电池硼扩散方法，其特征在于：所述正面硼掺杂非晶硅厚度在100nm-500nm，掺杂源为BH3。
4.根据权利要求1所述的一种提效降本的太阳能电池硼扩散方法，其特征在于：所述非晶硅高温退火并完成硼掺杂，退火温度在900℃-1000℃，N2流量在1000sccm-3000sccm，O2流量在1000sccm-3000sccm。
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