CN112164733A - 一种太阳能电池扩散深结制备方法 - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 13
- 239000011574 phosphorus Substances 0.000 claims abstract description 13
- 230000008021 deposition Effects 0.000 claims abstract description 11
- 239000012535 impurity Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 125000004437 phosphorous atom Chemical group 0.000 claims abstract description 5
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 4
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- 230000000295 complement effect Effects 0.000 claims abstract description 3
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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Abstract
本发明涉及太阳能电池生产领域。一种太阳能电池扩散深结制备方法，步骤一、制备一层SiO2层；步骤二、通过两次沉积在硅片表面制备恒定杂质磷源；步骤三、将磷原子推进至硅片内，形成PN结；步骤四、进行补扩散；步骤五、制备后氧化层；步骤六、在硅片表面再次沉积杂质磷源。步骤一前制备减反射绒面。本发明的有益效果是：在不改变整体方阻及工艺时间的情况下，有效增加PN结深和结区磷浓度差，提高电池片Uoc及FF，从而提高电池转换效率。
Description
技术领域
本发明涉及太阳能电池生产领域。
背景技术
扩散工艺是指通过高温扩散炉在P型硅片内掺杂磷原子形成PN结。目前扩散工艺主要为浅结工艺，优点为短波相应好，可以提高电池短路电流，缺点是做成组件后会有一部分电流损失，组件CTM值较低。随着原材料硅片工艺的不断进步，硅片少子寿命越来越好，提高电池短路电流已不在是难题。因此需要通过优化扩散工艺，提高PN结深度及结区浓度差，以提高电池Uoc及FF，从而提高电池转换效率。
发明内容
本发明所要解决的技术问题是：如何通过优化扩散工艺，提高PN结深度及结区浓度差。
本发明所采用的技术方案是：一种太阳能电池扩散深结制备方法，扩散制节步骤按照如下的步骤进行
步骤一、制备一层SiO2层；
步骤二、通过两次沉积在硅片表面制备恒定杂质磷源；
步骤三、将磷原子推进至硅片内，形成PN结；
步骤四、进行补扩散；
步骤五、制备后氧化层；
步骤六、在硅片表面再次沉积杂质磷源。
步骤一前制备减反射绒面。
步骤一中的工艺参数为：氧气流量600-1000sccm，氮气流量400-1000sccm，时间180-300s,压力100-150mbar,反应温度780-790℃。
步骤二中的工艺参数为：第1次沉积，小氮流量700-1000sccm，氮气流量600-1000sccm，氧气流量400-600sccm，时间180-250s，压力100-150mbar，反应温度780-790℃；第2次沉积温度为790-800℃，其余条件和第1此沉积一样。
步骤三中的工艺参数为：温度850-870℃，氮气流量1500-2000sccm，压力100-150mbar，时间900-1100s。
步骤四中的工艺参数为：降温至815-825℃进行补扩，小氮流量700-1000sccm，氮气流量600-1000sccm，氧气流量400-600sccm，时间60-120s,压力100-150mbar。
步骤五中的工艺参数为：氧气流量600-1000sccm，氮气流量400-1000sccm，时间400-500s，压力100-150mbar，反应温度790-800℃。
步骤六中的工艺参数为：小氮流量700-1000sccm，氮气流量600-1000sccm，氧气流量400-600sccm，时间300-400s,压力100-150mbar，反应温度790-800℃。
本发明的有益效果是：在不改变整体方阻及工艺时间的情况下，有效增加PN结深和结区磷浓度差，提高电池片Uoc及FF，从而提高电池转换效率。本发明PN结深度为0.26-0.3um，结区磷表面浓度差为1.6*1020-1.8*1020/cm3，方阻为130-150 Ohm。
具体实施方式
使用清洗制绒工艺，去除硅片损伤层，制备减反射绒面。
使用扩散炉在硅片表面制备一层SiO2层，氧气流量600sccm，氮气流量700sccm，时间300s,压力100mbar,反应温度780℃。
在硅片表面沉积恒定杂质磷源，第1次沉积：小氮流量800sccm，氮气流量600sccm，氧气流量500sccm，时间200s,压力100mbar，反应温度790℃；第2次沉积温度为800℃，其余条件和第1次沉积一样。备注:小氮为PClO3携带气体。
将反应生产的磷原子推进至硅片内，形成PN结。温度865℃，氮气流量1500sccm，压力100mbar，时间1000s。
降温至820℃并补扩，小氮流量700sccm，氮气流量600sccm，氧气流量500sccm，时间120s,压力100mbar。
制备后氧化层，氧气流量1000sccm，氮气流量6000sccm，时间400s,压力100mbar,反应温度790℃。
在硅片表面再次沉积杂质磷源，小氮流量700sccm，氮气流量600sccm，氧气流量500sccm，时间400s,压力100mbar，反应温度790℃。再次沉积杂质磷源起到聚杂降低结区磷表面浓度差，同时增加深度PN结深度。
Claims (8)
1.一种太阳能电池扩散深结制备方法，其特征在于：扩散制节步骤按照如下的步骤进行
步骤一、制备一层SiO2层；
步骤二、通过两次沉积在硅片表面制备恒定杂质磷源；
步骤三、将磷原子推进至硅片内，形成PN结；
步骤四、进行补扩散；
步骤五、制备后氧化层；
步骤六、在硅片表面再次沉积杂质磷源。
2.根据权利要求1所述的一种太阳能电池扩散深结制备方法，其特征在于：步骤一前制备减反射绒面。
3.根据权利要求2所述的一种太阳能电池扩散深结制备方法，其特征在于：步骤一中的工艺参数为：氧气流量600-1000sccm，氮气流量400-1000sccm，时间180-300s,压力100-150mbar,反应温度780-790℃。
4.根据权利要求3所述的一种太阳能电池扩散深结制备方法，其特征在于：步骤二中的工艺参数为：第1次沉积，小氮流量700-1000sccm，氮气流量600-1000sccm，氧气流量400-600sccm，时间180-250s，压力100-150mbar，反应温度780-790℃；第2次沉积温度为790-800℃，其余条件和第1此沉积一样。
5.根据权利要求4所述的一种太阳能电池扩散深结制备方法，其特征在于：步骤三中的工艺参数为：温度850-870℃，氮气流量1500-2000sccm，压力100-150mbar，时间900-1100s。
6.根据权利要求5所述的一种太阳能电池扩散深结制备方法，其特征在于：步骤四中的工艺参数为：降温至815-825℃进行补扩，小氮流量700-1000sccm，氮气流量600-1000sccm，氧气流量400-600sccm，时间60-120s,压力100-150mbar。
7.根据权利要求6所述的一种太阳能电池扩散深结制备方法，其特征在于：步骤五中的工艺参数为：氧气流量600-1000sccm，氮气流量400-1000sccm，时间400-500s，压力100-150mbar，反应温度790-800℃。
8.根据权利要求7所述的一种太阳能电池扩散深结制备方法，其特征在于：步骤六中的工艺参数为：小氮流量700-1000sccm，氮气流量600-1000sccm，氧气流量400-600sccm，时间300-400s,压力100-150mbar，反应温度790-800℃。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113257954A (zh) * | 2021-04-20 | 2021-08-13 | 山西潞安太阳能科技有限责任公司 | 一种解决碱抛se-perc电池el不良的方法 |
| CN114497283A (zh) * | 2022-02-07 | 2022-05-13 | 通威太阳能（安徽）有限公司 | 一种用于硅片的扩散方法及光伏硅片 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113257954A (zh) * | 2021-04-20 | 2021-08-13 | 山西潞安太阳能科技有限责任公司 | 一种解决碱抛se-perc电池el不良的方法 |
| CN114497283A (zh) * | 2022-02-07 | 2022-05-13 | 通威太阳能（安徽）有限公司 | 一种用于硅片的扩散方法及光伏硅片 |
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