CN112510112B - 一种高致密性氧化层的扩散工艺方法 - Google Patents

一种高致密性氧化层的扩散工艺方法 Download PDF

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CN112510112B
CN112510112B CN202011218485.3A CN202011218485A CN112510112B CN 112510112 B CN112510112 B CN 112510112B CN 202011218485 A CN202011218485 A CN 202011218485A CN 112510112 B CN112510112 B CN 112510112B
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CN112510112A (zh
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王森栋
白翔
蒋万昌
赵晨
戴大洲
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Shanxi Luan Solar Energy Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
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    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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Abstract

本发明涉及太阳能电池生产领域。一种高致密性氧化层的扩散工艺方法，按如下的步骤进行前氧化、第一步沉积、第一步推进、第二步沉积、第二步推进、第三步沉积、第三步推进、后氧化。通过前氧化及多次分布式沉积推进，有效改善PN结深，降低死层，减少复合；通过后氧化，使用低温，高浓度进行沉积，即增加了氧化层厚度，又不会使磷源近一步的扩散进电池片，减少了扩散半成品控制难度。

Description

一种高致密性氧化层的扩散工艺方法
技术领域
本发明涉及太阳能电池生产领域。
背景技术
在晶体硅太阳能电池生产工艺中，扩散是核心工序。在硅片表面形成均匀的高质量的 p-n 结是电池效率提升的关键，也是工艺追求的目标。目前，常规生产的扩散工艺是在管式的扩散炉内，通过液态磷源(或硼源)的挥发，在硅片表面沉积磷原子(或硼原子)，然后进行向硅片体内扩散，制成 p-n 结。为配合无机碱为基础的碱背抛工艺，必须使用高致密性的氧化层来保护PN结，才能达到碱抛刻蚀替代酸抛刻蚀，扩散工艺后氧浓度加大，有效改善氧化层厚度，通过氧化层来保护正面绒面不被刻蚀掉。
发明内容
本发明所要解决的技术问题是：如何形成致密的氧化层，以在后续碱背抛工艺中保护PN结。
本发明所采用的技术方案是：一种高致密性氧化层的扩散工艺方法，按如下的步骤进行
步骤一、前氧化，其中时间200-500s，氮气0-2000sccm,氧气800-1000sccm ，温度700-780℃；
步骤二、第一步沉积，其中时间100-300s，氮气1000-2000sccm,氧气500-800sccm，三氯氧磷400-600sccm，温度700-780℃；
步骤三、第一步推进，其中时间100-300s，氮气1000-2000sccm,氧气700-1000sccm，温度780-850℃；第一步推进，温度在第一步沉积基础上提升70-80℃，氧气流量在第一步沉积基础上提升200 sccm，停止三氯氧磷，其它工艺条件不变。
步骤四、第二步沉积，其中时间100-300s，氮气1000-2000sccm,氧气400-700sccm，三氯氧磷500-700sccm，温度800-820℃；第二步沉积，温度在第一步沉积基础上提升40-100℃，氧气流量在第一步沉积基础上减少100 sccm，三氯氧磷在第一步沉积基础上提升100 sccm，其它工艺条件不变。
步骤五、第二步推进，其中时间100-300s，氮气1000-2000sccm,氧气700-1000sccm，温度820-850℃；第二步推进，停止三氯氧磷，温度在第二步沉积基础上提升30℃，氧气流量在第二步沉积基础上提升300 sccm，其它工艺条件不变。
步骤六、第三步沉积，其中时间100-300s，氮气1000-2000sccm,氧气500-800sccm，三氯氧磷400-600sccm，温度820-850℃；第三步沉积，温度在第二步沉积基础上提升30℃，氧气流量在第二步沉积基础上提升100 sccm，三氯氧磷在第二步沉积基础上减少100sccm，其它工艺条件不变。
步骤七、第三步推进，其中时间100-300s，氮气1000-2000sccm,氧气700-1000sccm，温度820-850℃；第三步推进，停止三氯氧磷，氧气流量在第三步沉积基础上提升200sccm，其它工艺条件不变。
步骤八、后氧化，其中时间500-1000s，氮气0-100sccm,氧气1000-3000sccm ，温度500-700℃。
前氧化分为三步，首先，调整氮气1000-2000sccm，氧气800-1000sccm，温度700-780℃，氧化75-200s，然后，调整氮气0sccm，氧气800-1000sccm，温度780℃，氧化50-100 s，最后，调整氮气1000-2000sccm，氧气800-1000sccm，温度700-780℃，氧化75-200s。使在硅片表面形成一层高致密性氧化层。
后氧化分为三步，首先，调整氮气100sccm,氧气1000-3000sccm ，温度500-700℃，氧化200-400s，然后，调整氮气0sccm,氧气1000-3000sccm ，温度500-700℃，氧化200-400s，最后，调整氮气100sccm,氧气1000-3000sccm ，温度500-700℃，氧化200-400s。
本发明的有益效果是：通过前氧化及多次分布式沉积推进，有效改善PN结深，降低死层，减少复合；通过后氧化，使用低温，高浓度进行沉积，即增加了氧化层厚度，又不会使磷源近一步的扩散进电池片，减少了扩散半成品控制难度。
具体实施方式
一种高致密性氧化层的扩散工艺方法，按如下的步骤进行
步骤一、前氧化，首先，调整氮气1500sccm，氧气850sccm，温度750℃，氧化100s，然后，调整氮气0sccm，氧气1000sccm，温度780℃，氧化50s，最后，调整氮气1500sccm，氧气850sccm，温度750℃，氧化100s。使在硅片表面形成一层高致密性氧化层；
步骤二、第一步沉积，其中时间200s，氮气1500sccm,氧气600sccm ，三氯氧磷500sccm，温度780℃；
步骤三、第一步推进，其中时间200s，氮气1500sccm,氧气800sccm ，温度850℃；步骤四、第二步沉积，其中时间200s，氮气1500sccm,氧气500sccm ，三氯氧磷600sccm，温度820℃；
步骤五、第二步推进，其中时间200s，氮气1500sccm,氧气900sccm ，温度850℃；
步骤六、第三步沉积，其中时间200s，氮气1500sccm,氧气600sccm ，三氯氧磷500sccm，温度850℃；
步骤七、第三步推进，其中时间200s，氮气1500sccm,氧气800sccm ，温度850℃；
步骤八、后氧化，首先，调整氮气100sccm,氧气2500sccm ，温度600℃，氧化300s，然后，调整氮气0sccm,氧气2500sccm ，温度600℃，氧化200s，最后，调整氮气100sccm,氧气2500sccm ，温度600℃，氧化300s。

Claims (1)

1.一种高致密性氧化层的扩散工艺方法，其特征在于：按如下的步骤进行
步骤一、前氧化，首先，调整氮气1000-2000sccm，氧气800-1000sccm，温度700-780℃，氧化75-200s，然后，调整氮气0sccm，氧气800-1000sccm，温度780℃，氧化50-100 s，最后，调整氮气1000-2000sccm，氧气800-1000sccm，温度700-780℃，氧化75-200s，使在硅片表面形成一层高致密性氧化层；
步骤二、第一步沉积，其中时间100-300s，氮气1000-2000sccm,氧气500-800sccm ，三氯氧磷400-600sccm，温度700-780℃；
步骤三、第一步推进，其中时间100-300s，氮气1000-2000sccm,氧气700-1000sccm ，温度780-850℃；
步骤四、第二步沉积，其中时间100-300s，氮气1000-2000sccm,氧气400-700sccm ，三氯氧磷500-700sccm，温度800-820℃；
步骤五、第二步推进，其中时间100-300s，氮气1000-2000sccm,氧气700-1000sccm ，温度820-850℃；
步骤六、第三步沉积，其中时间100-300s，氮气1000-2000sccm,氧气500-800sccm ，三氯氧磷400-600sccm，温度820-850℃；
步骤七、第三步推进，其中时间100-300s，氮气1000-2000sccm,氧气700-1000sccm ，温度820-850℃；
步骤八、后氧化，后氧化分为三步，首先，调整氮气100sccm,氧气1000-3000sccm ，温度500-700℃，氧化200-400s，然后，调整氮气0sccm,氧气1000-3000sccm ，温度500-700℃，氧化200-400s，最后，调整氮气100sccm,氧气1000-3000sccm ，温度500-700℃，氧化200-400s。
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