CN111508829B - 一种能够匹配se+碱抛的单晶硅电池片扩散提效工艺 - Google Patents
一种能够匹配se+碱抛的单晶硅电池片扩散提效工艺 Download PDFInfo
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Abstract
本发明涉及一种能够匹配SE+碱抛的单晶硅电池片扩散提效工艺，属于太阳能电池技术领域。本发明可以将太阳能电池片扩散后的方阻由125‑130/sq，提升至140‑150Ω/sq，具体结果根据使用的扩散炉会有所不同,开压提升2毫伏，效率提升0.1%以上。可匹配选择性发射极（SE）+碱抛，实现规模化量产。
Description
技术领域
本发明涉及一种能够匹配SE+碱抛的单晶硅电池片扩散提效工艺，属于太阳能电池技术领域。
背景技术
目前市场中的太阳能电池片普遍采用的是较低方阻（80-90Ω）的工艺。这种工艺的电池片适用于常规组件生产。于此同时,申请人也开展了选择性发射极（SE）+碱抛匹配太阳能电池片的大规模生产，在常规电池片的基础上，应用了选择性发射极技术的电池片的效率可以提升0.3%左右、这种技术的设计初衷是减少磷的扩散浓度，以此降低少子复合速率，降低补源步温度，减少间隙式掺杂的发生、同时增PSG层中储备P的含量，再采用激光掺杂的方法，构造浓掺杂区域，用以降低与金属栅线接触的电阻。而降低磷掺杂量，最直接的影响就是需要提高电池片的方阻。现有太阳能电池片的方阻显然不能与选择性发射极（SE）+碱抛匹配。
发明内容
本发明的目的是针对现有技术存在的缺陷，提出一种能够匹配SE+碱抛的单晶硅电池片扩散提效工艺，可规模化，低成本的量产用于更高的高方阻（140-150Ω）匹配激光SE+碱抛的太阳能电池片。
本发明通过以下技术方案解决技术问题：一种能够匹配SE+碱抛的单晶硅电池片扩散提效工艺，包括以下步骤：
第一步、将待扩散的硅片置于扩散炉中，升温至775-795℃；
第二步、待温度稳定后，将炉内各温区的温度升至790-795℃，同时通入475-525sccm 大N2,855-945sccm O2和475-525sccm的小N2，时间为285-315s；
第三步、继续将炉内各温区的温度控制在790-805℃，同时通入475-525sccm 大N2,617-683sccm O2和665-735sccm携带POCl3的小N2，时间为171-189s；
第四步、待温度稳定后，将炉内各温区的温度升至800-815℃，通入475-525sccm大N2,617-683sccm O2和665-735sccm携带POCl3的小N2，时间为171-189s；
第五步、继续将炉内各温区的温度升至870-885℃，同时通入1330-1470sccm 大N2和475-525sccm的小N2，时间为456-504s；
第六步、待温度稳定后，将炉内各温区的稳定至870-885℃，同时通入1805-1995sccm 大N2，时间为570-630s；
第七步、将炉内各温区的温度降至810-815℃，同时通入1330-1470sccm 大N2和475-525sccm的小N2，时间为798-882s；
第八步、继续将炉内各温区的温度控制在810-815℃，同时通入380-420sccm 大N2, 665-735sccm O2和665-735sccm携带POCl3的小N2，时间为171-189s；
第九步、将炉内各温区的温度降至780-795℃，同时通入1330-1470sccm 大N2和475-525sccm的小N2，时间为342-378s；
第十步、继续将炉内各温区的温度控制在780-795℃，同时通入475-525sccm 大N2, 475-525sccm O2和1140-1260sccm携带POCl3的小N2，时间为456-504s；
第十一步、将炉内各温区的温度降至780℃，同时通入950-1050sccm 大N2,2375-2625sccm的O2，时间为171-189s；
第十二步、继续降温，回压，取出硅片。
以上方法基于的原理是：在管式扩散炉中，磷源由氮气从一头带入。由于磷会先沉积在预先制备的氧化层中，先接触到磷的电池片可以沉积更多的磷，因此在这个过程中管内会形成浓度梯度。为了消除这种影响，需要降低沉积时的温度，以此减少反应前区磷在氧化层中的沉积，同时增加前氧工艺步骤，使得更多的磷能够被氮气带入到反应后区。同时PN结的物理性质同时受推结时间和推结温度的影响。同步降低补源步温度，减少间隙式掺杂的发生、同时增PSG层中储备P的含量，再采用激光掺杂的方法，构造浓掺杂区域，用以降低与金属栅线接触的电阻。
本发明的有益效果：可以将太阳能电池片扩散后的方阻由125-130/sq，提升至140-150Ω/sq，具体结果根据使用的扩散炉会有所不同,开压提升2毫伏，效率提升0.1%以上。可匹配选择性发射极（SE）+碱抛，实现规模化量产。
具体实施方式
实施例1
一种单晶硅选择性发射极太阳能电池片扩散工艺，具体的制备方
法如下步骤：
1.将待扩散的硅片放于扩散炉中，升温至790℃；
2.待温度稳定后，将炉内各温区的温度升至790℃，同时通入500sccm 大N2,900sccm O2和500sccm的小N2（暂不通磷源），时间为300s；
3.继续将炉内各温区的温度控制在790℃，同时通入500sccm 大N2,650sccm O2和700sccm携带POCl3的小N2，时间为180s；
4.温度稳定后，将炉内各温区的温度升至800℃，通入500sccm 大N2,650sccm O2和700sccm携带POCl3的小N2，时间为180s；
5.继续将炉内各温区的温度升至870℃，同时通入1400sccm 大N2和500sccm的小N2（暂不通磷源），时间为480s；
6.温度稳定后，将炉内各温区的稳定至870℃，同时通入1900sccm 大N2，时间为600s；
7.将炉内各温区的温度降至810℃，同时通入1400sccm 大N2和500sccm的小N2（暂不通磷源），时间为840s；
8.继续将炉内各温区的温度控制在810℃，同时通入400sccm 大N2,700sccm O2和700sccm携带POCl3的小N2，时间为180s；
9.将炉内各温区的温度降至780℃，同时通入1400sccm 大N2和500sccm的小N2（暂不通磷源），时间为360s；
10. 继续将炉内各温区的温度控制在780℃，同时通入500sccm 大N2,500sccm O2和1200sccm携带POCl3的小N2，时间为480s；
11. 将炉内各温区的温度降至780℃，同时通入1000sccm 大N2,2500sccm的O2，时间为180s；
12. 继续降温，回压，取出硅片。
上述待扩散的硅片为单晶硅片，使用此扩散工艺制造出的选择性发射极电池，重掺方阻为80-90Ω/sq，浅掺方阻为140-145Ω/sq；选择隆基片源（p型硅）电池片作为传统对比组，利用IV测试机:Halm测试机,对本实施例所得硅片和隆基片源（p型硅）电池片进行检测，性能如表1所示，
表1
| Uoc | Isc | Rs | Rsh | FF | Ncell | 备注 | |
| 实施实例1 | 0.6773 | 10.2818 | 0.0023 | 1110 | 80.5276 | 22.2528 | 145方阻 |
| 传统对比组 | 0.6752 | 10.2739 | 0.0024 | 1049 | 80.4140 | 22.1355 | 125方阻 |
由表1可知，工艺优化的高方阻实验组较对比组效率增益0.117%，主要为开压提升2.1毫伏，电流提升8毫安。
除上述实施外，本发明还可以有其他实施方式。凡采用等同替换或等效变换形成的技术方案，均落在本发明要求的保护范围。
Claims (2)
1.一种能够匹配SE+碱抛的单晶硅电池片扩散提效工艺，包括以下步骤：
第一步、将待扩散的硅片置于扩散炉中，升温至775-795℃；
第二步、待温度稳定后，将炉内各温区的温度升至790-795℃，同时通入475-525sccm大N2,855-945sccm O2和475-525sccm的小N2，时间为285-315s；
第三步、继续将炉内各温区的温度控制在790-805℃，同时通入475-525sccm 大N2,617-683sccm O2和665-735sccm携带POCl3的小N2，时间为171-189s；
第四步、待温度稳定后，将炉内各温区的温度升至800-815℃，通入475-525scc大N2,617-683sccm O2和665-735sccm携带POCl3的小N2，时间为171-189s；
第五步、继续将炉内各温区的温度升至870-885℃，同时通入1330-1470sccm 大N2和475-525sccm的小N2，时间为456-504s；
第六步、待温度稳定后，将炉内各温区的稳定至870-885℃，同时通入1805-1995sccm大N2，时间为570-630s；
第七步、将炉内各温区的温度降至810-815℃，同时通入1330-1470sccm 大N2和475-525sccm的小N2，时间为798-882s；
第八步、继续将炉内各温区的温度控制在810-815℃，同时通入380-420sccm 大N2,665-735sccm O2和665-735sccm携带POCl3的小N2，时间为171-189s；
第九步、将炉内各温区的温度降至780-795℃，同时通入1330-1470sccm 大N2和475-525sccm的小N2，时间为342-378s；
第十步、继续将炉内各温区的温度控制在780-795℃，同时通入475-525sccm 大N2,475-525sccm O2和1140-1260sccm携带POCl3的小N2，时间为456-504s；
第十一步、将炉内各温区的温度降至780℃，同时通入950-1050sccm 大N2,2375-2625sccm的O2，时间为171-189s；
第十二步、继续降温，回压，取出硅片。
2.根据权利要求1所述能够匹配SE+碱抛的单晶硅电池片扩散提效工艺，其特征在于：
第一步、将待扩散的硅片置于扩散炉中，升温至790℃；
第二步、待温度稳定后，将炉内各温区的温度升至790-795℃，同时通入500sccm 大N2,900sccm O2和500sccm的小N2，时间为300s；
第三步、继续将炉内各温区的温度控制在790-805℃，同时通入500sccm 大N2,650sccmO2和700sccm携带POCl3的小N2，时间为180s；
第四步、待温度稳定后，将炉内各温区的温度升至800-815℃，通入500sccm 大N2,650sccm O2和700sccm携带POCl3的小N2，时间为180s；
第五步、继续将炉内各温区的温度升至870-885℃，同时通入1400sccm 大N2和500sccm的小N2，时间为480s；
第六步、待温度稳定后，将炉内各温区的稳定至870-885℃，同时通入1900sccm 大N2，时间为600s；
第七步、将炉内各温区的温度降至810-815℃，同时通入1400sccm 大N2和500sccm的小N2，时间为840s；
第八步、继续将炉内各温区的温度控制在810-815℃，同时通入400sccm 大N2,700sccmO2和700sccm携带POCl3的小N2，时间为180s；
第九步、将炉内各温区的温度降至780-795℃，同时通入1400sccm 大N2和500sccm的小N2，时间为360s；
第十步、继续将炉内各温区的温度控制在780-795℃，同时通入500sccm 大N2,500sccmO2和1200sccm携带POCl3的小N2，时间为480s；
第十一步、将炉内各温区的温度降至780℃，同时通入1000sccm 大N2,2500sccm的O2，时间为180s；
第十二步、继续降温，回压，取出硅片。
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