CN114001639A - Four-strain-gap four-resistance-gate type thin film strain sensor and preparation method thereof - Google Patents
Four-strain-gap four-resistance-gate type thin film strain sensor and preparation method thereof Download PDFInfo
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- CN114001639A CN114001639A CN202111373603.2A CN202111373603A CN114001639A CN 114001639 A CN114001639 A CN 114001639A CN 202111373603 A CN202111373603 A CN 202111373603A CN 114001639 A CN114001639 A CN 114001639A
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- 239000010409 thin film Substances 0.000 title claims abstract description 52
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000010408 film Substances 0.000 claims abstract description 93
- 229910052751 metal Inorganic materials 0.000 claims abstract description 62
- 239000002184 metal Substances 0.000 claims abstract description 62
- 229910018487 Ni—Cr Inorganic materials 0.000 claims abstract description 33
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 230000007704 transition Effects 0.000 claims abstract description 27
- 230000000149 penetrating effect Effects 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 22
- 239000002131 composite material Substances 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000010963 304 stainless steel Substances 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 claims 4
- 238000005520 cutting process Methods 0.000 abstract description 12
- 238000005259 measurement Methods 0.000 abstract description 9
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 238000003754 machining Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 11
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
- G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
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- General Physics & Mathematics (AREA)
- Measurement Of Force In General (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
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Abstract
The invention relates to a thin film strain sensor, in particular to a four-strain-gap four-resistance-gate thin film strain sensor and a preparation method thereof. The invention solves the problems of small strain and low sensitivity and linearity when the existing thin film strain sensor is applied to a low-strain or micro-strain measurement environment. A four-strain-gap four-resistance-grid type thin-film strain sensor comprises an H-shaped metal substrate, a rectangular transition film layer, a rectangular insulating film layer and four nickel-chromium thin-film resistance grids; the rectangular transition film layer is deposited in the middle of the upper surface of the H-shaped metal substrate; the rectangular insulating film layer is deposited on the upper surface of the rectangular transition film layer, and four strain gaps which are distributed in a cross shape are arranged on the surface of the rectangular insulating film layer in a penetrating mode; the head ends of the four strain gaps are closed; the tail ends of the four strain gaps penetrate through the middles of the four end faces of the rectangular insulating film layer in a one-to-one correspondence mode. The invention is suitable for measuring the cutting force in cutting machining.
Description
Technical Field
The invention relates to a thin film strain sensor, in particular to a four-strain-gap four-resistance-gate thin film strain sensor and a preparation method thereof.
Background
Currently, among many types of strain sensors, a thin film strain sensor is widely used for measuring a cutting force in a cutting process because of its advantages of small size, simple reading circuit, low price, and the like. However, under the prior art, due to the limitation of the sensitive structure of the thin film strain sensor, when the thin film strain sensor is applied to a low-strain or micro-strain measurement environment, the problems of small strain and low sensitivity and linearity exist, and therefore the accuracy and reliability of the cutting force measurement are affected. Therefore, a four-strain-gap four-resistance-gate thin film strain sensor and a preparation method thereof are needed to be invented to solve the problems of small strain, low sensitivity and low linearity when the existing thin film strain sensor is applied to a low-strain or micro-strain measurement environment.
Disclosure of Invention
The invention provides a four-strain-gap four-resistance-gate type thin film strain sensor and a preparation method thereof, aiming at solving the problems of small strain and low sensitivity and linearity when the existing thin film strain sensor is applied to a low-strain or micro-strain measurement environment.
The invention is realized by adopting the following technical scheme:
a four-strain-gap four-resistance-grid type thin-film strain sensor comprises an H-shaped metal substrate, a rectangular transition film layer, a rectangular insulating film layer and four nickel-chromium thin-film resistance grids; the rectangular transition film layer is deposited in the middle of the upper surface of the H-shaped metal substrate; the rectangular insulating film layer is deposited on the upper surface of the rectangular transition film layer, and four strain gaps which are distributed in a cross shape are arranged on the surface of the rectangular insulating film layer in a penetrating mode; the head ends of the four strain gaps are closed; the tail ends of the four strain gaps penetrate through the middles of the four end faces of the rectangular insulating film layer in a one-to-one correspondence manner; four nickel-chromium thin film resistance grids are deposited on the upper surface of the rectangular insulating film layer and are distributed in a cross shape; the four nickel-chromium thin film resistance grids are located above the four strain gaps in a one-to-one correspondence mode, and the four nickel-chromium thin film resistance grids are connected together through a lead to form a Wheatstone bridge circuit.
A method for preparing a four-strain gap four-resistance gate type thin film strain sensor (the method is used for preparing the four-strain gap four-resistance gate type thin film strain sensor), which is realized by adopting the following steps:
the method comprises the following steps: respectively manufacturing a metal mask A and a metal mask B;
the metal mask A comprises a rectangular plate body A; two strip-shaped positioning bosses A which are symmetrically distributed in the front-back direction are arranged on the edge of the lower surface of the rectangular plate body A in an extending manner; the middle part of the surface of the rectangular plate body A is provided with a rectangular window in a penetrating way; the middle parts of four wall surfaces of the rectangular window are respectively provided with a cantilever beam in an extending way, and the four cantilever beams are distributed in a cross shape;
the metal mask B comprises a rectangular plate body B; two strip-shaped positioning bosses B which are symmetrically distributed in the front-back direction are arranged on the edge of the lower surface of the rectangular plate body B in an extending manner; the middle part of the surface of the rectangular plate body B is provided with four strip-shaped windows which are distributed in a cross shape in a penetrating way;
step two: selecting an H-shaped metal substrate, and cleaning the H-shaped metal substrate;
step three: depositing a rectangular transition film layer in the middle of the upper surface of the H-shaped metal substrate to obtain a double-layer composite structure;
step four: placing a metal mask A above the double-layer composite structure, so that on one hand, two strip-shaped positioning bosses A are respectively embedded in two notches of the H-shaped metal substrate, and on the other hand, the rectangular transition film layer is exposed through the rectangular window;
then, depositing a rectangular insulating film layer on the upper surface of the rectangular transition film layer to obtain a three-layer composite structure; in the deposition process, four strain gaps which are distributed in a cross shape are formed on the surface of the rectangular insulating film layer due to the shielding of the four cantilever beams;
step five: removing the metal mask A from the upper part of the three-layer composite structure to expose the four strain gaps;
step six: placing a metal mask B above the three-layer composite structure, so that two strip-shaped positioning bosses B are respectively embedded in two notches of the H-shaped metal substrate on one hand, and four strain gaps are exposed through four strip-shaped windows in a one-to-one correspondence manner on the other hand;
then, depositing four strip-shaped sacrificial film layers in the four strain gaps in a one-to-one correspondence manner, thereby obtaining a three-layer composite structure with the sacrificial film layers;
step seven: removing the metal mask B from the upper part of the three-layer composite structure with the sacrificial film layers to expose the four strip-shaped sacrificial film layers;
step eight: depositing a nickel-chromium sensitive film layer on the upper surface of the rectangular insulating film layer and the upper surfaces of the four strip-shaped sacrificial film layers, and etching the nickel-chromium sensitive film layer into four nickel-chromium thin film resistor gates by adopting a photoetching process and an ion beam etching process;
step nine: and removing the four strip sacrificial film layers by adopting a wet etching process to prepare the four-strain-gap four-resistance-grid type thin film strain sensor.
When the system works, the Wheatstone bridge circuit is connected with the PC through the signal processing module. The specific working process is as follows: when cutting machining is carried out, cutting force is transmitted to the H-shaped metal substrate, so that the H-shaped metal substrate deforms, the rectangular transition film layer, the rectangular insulating film layer, the four strain gaps and the four nickel-chromium thin-film resistor grids all deform, and the resistance values of the four nickel-chromium thin-film resistor grids all change. At this time, since the resistance values of the four nichrome thin-film resistor grids are all changed, the wheatstone bridge circuit is in an unbalanced state, and the wheatstone bridge circuit outputs a voltage signal accordingly. The voltage signal output by the Wheatstone bridge circuit is processed by the signal processing module and then transmitted to the PC, and the PC can acquire cutting force information in cutting processing in real time according to the received voltage signal.
Based on the process, compared with the existing thin film strain sensor, the four-strain-gap four-resistance-grid type thin film strain sensor disclosed by the invention has the advantages that the stress concentration area is generated in a small area by adopting a brand-new four-strain-gap four-resistance-grid type sensitive structure, so that the strain energy dissipation can be effectively prevented, the strain can be effectively increased when the four-strain-gap four-resistance-grid type thin film strain sensor is applied to a low-strain or micro-strain measurement environment, the sensitivity and the linearity are effectively improved, and the precision and the reliability of cutting force measurement are effectively ensured.
The invention effectively solves the problems of small strain and low sensitivity and linearity when the existing film strain sensor is applied to a low-strain or micro-strain measurement environment, and is suitable for cutting force measurement in cutting processing.
Drawings
Fig. 1 is an exploded view of the structure of the present invention.
FIG. 2 is a first schematic structural diagram of a metal mask A according to the present invention.
FIG. 3 is a second schematic structural diagram of a metal mask A according to the present invention.
FIG. 4 is a first schematic structural diagram of a metal mask B according to the present invention.
FIG. 5 is a second schematic structural diagram of a metal mask B according to the present invention.
FIG. 6 is a schematic diagram of step three of the present invention.
FIG. 7 is a diagram illustrating step four of the present invention.
FIG. 8 is a schematic diagram of step five of the present invention.
FIG. 9 is a schematic diagram of step six of the present invention.
FIG. 10 is a schematic diagram of step seven in the present invention.
FIG. 11 is a schematic diagram of step eight of the present invention.
FIG. 12 is a diagram illustrating step nine in the present invention.
In the figure: the method comprises the following steps of 1-H-shaped metal substrate, 2-rectangular transition film layer, 3-rectangular insulating film layer, 4-nickel-chromium thin film resistance grid, 5-strain gap, 601-rectangular plate body A, 602-strip-shaped positioning boss A, 603-rectangular window, 604-cantilever beam, 701-rectangular plate body B, 702-strip-shaped positioning boss B, 703-strip-shaped window and 8-strip-shaped sacrificial film layer.
Detailed Description
A four-strain-gap four-resistance-grid type thin-film strain sensor comprises an H-shaped metal substrate 1, a rectangular transition film layer 2, a rectangular insulating film layer 3 and four nickel-chromium thin-film resistance grids 4; wherein, the rectangular transition film layer 2 is deposited in the middle of the upper surface of the H-shaped metal substrate 1; the rectangular insulating film layer 3 is deposited on the upper surface of the rectangular transition film layer 2, and four strain gaps 5 distributed in a cross shape are formed in the surface of the rectangular insulating film layer 3 in a penetrating mode; the head ends of the four strain gaps 5 are all closed; the tail ends of the four strain gaps 5 penetrate through the middles of the four end faces of the rectangular insulating film layer 3 in a one-to-one correspondence manner; four nickel-chromium thin-film resistance grids 4 are deposited on the upper surface of the rectangular insulating film layer 3, and the four nickel-chromium thin-film resistance grids 4 are distributed in a cross shape; the four nickel-chromium thin film resistance grids 4 are located above the four strain gaps 5 in a one-to-one correspondence mode, and the four nickel-chromium thin film resistance grids 4 are connected together through a lead to form a Wheatstone bridge circuit.
The H-shaped metal substrate 1 is made of 304 stainless steel, copper or aluminum, and the thickness of the H-shaped metal substrate is 0.5 mm-1 mm; the rectangular transition film layer 2 is made of titanium nitride or aluminum oxide, and the thickness of the rectangular transition film layer is 500 nm-800 nm; the rectangular insulating film layer 3 is made of silicon nitride or silicon dioxide, and the thickness of the rectangular insulating film layer is 200 nm-300 nm; the thicknesses of the four nickel-chromium thin film resistor gates 4 are all 800 nm-1000 nm.
Each nickel-chromium thin-film resistance grid 4 comprises twenty-nine long grids and twenty-eight short grids; each long grid is 4mm in length, 0.1mm in width and 55 omega in resistance value; the length of each short gate is 0.4mm, the width is 0.4mm, and the resistance value is 1.375 omega.
A method for preparing a four-strain gap four-resistance gate type thin film strain sensor (the method is used for preparing the four-strain gap four-resistance gate type thin film strain sensor), which is realized by adopting the following steps:
the method comprises the following steps: respectively manufacturing a metal mask A and a metal mask B;
the metal mask A comprises a rectangular plate body A601; two strip-shaped positioning bosses A602 which are symmetrically distributed in front and back are arranged on the edge of the lower surface of the rectangular plate body A601 in an extending manner; the middle part of the surface of the rectangular plate body A601 is provided with a rectangular window 603 in a penetrating way; the middle parts of four wall surfaces of the rectangular window 603 are respectively provided with a cantilever beam 604 in an extending way, and the four cantilever beams 604 are distributed in a cross shape;
the metal mask B comprises a rectangular plate body B701; two strip-shaped positioning bosses B702 which are symmetrically distributed in the front-back direction are arranged on the edge of the lower surface of the rectangular plate body B701 in an extending manner; the middle part of the surface of the rectangular plate body B701 is provided with four strip-shaped windows 703 which are distributed in a cross shape in a penetrating way;
step two: selecting an H-shaped metal substrate 1, and cleaning the H-shaped metal substrate 1;
step three: depositing a rectangular transition film layer 2 in the middle of the upper surface of an H-shaped metal substrate 1, thereby obtaining a double-layer composite structure;
step four: placing a metal mask A above the double-layer composite structure, on one hand, respectively embedding two strip-shaped positioning bosses A602 in two notches of the H-shaped metal substrate 1, and on the other hand, exposing the rectangular transition film layer 2 through the rectangular window 603;
then, depositing a rectangular insulating film layer 3 on the upper surface of the rectangular transition film layer 2, thereby obtaining a three-layer composite structure; in the deposition process, four strain gaps 5 distributed in a cross shape are formed on the surface of the rectangular insulating film layer 3 due to the shielding of the four cantilever beams 604;
step five: removing the metal mask A from the upper part of the three-layer composite structure to expose the four strain gaps 5;
step six: placing a metal mask B above the three-layer composite structure, so that two strip-shaped positioning bosses B702 are respectively embedded in two notches of the H-shaped metal substrate 1 on one hand, and the four strain gaps 5 are exposed through four strip-shaped windows 703 in a one-to-one correspondence manner on the other hand;
then, four strip-shaped sacrificial film layers 8 are deposited in the four strain gaps 5 in a one-to-one correspondence manner, so that a three-layer composite structure with the sacrificial film layers is obtained;
step seven: removing the metal mask B from the upper part of the three-layer composite structure with the sacrificial film layers to expose the four strip-shaped sacrificial film layers 8;
step eight: depositing a nickel-chromium sensitive film layer on the upper surface of the rectangular insulating film layer 3 and the upper surfaces of the four strip-shaped sacrificial film layers 8, and etching the nickel-chromium sensitive film layer into four nickel-chromium thin film resistor gates 4 by adopting a photoetching process and an ion beam etching process;
step nine: and removing the four strip-shaped sacrificial film layers 8 by adopting a wet etching process, thereby preparing the four-strain-gap four-resistance grid type thin film strain sensor.
The thickness of the metal mask A and the thickness of the metal mask B are both 1 mm-2 mm; the four strip-shaped sacrificial film layers 8 are made of tin, silicon or aluminum, and the thicknesses of the four strip-shaped sacrificial film layers are 200 nm-300 nm; the thickness of the nickel-chromium sensitive film layer is 800 nm-1000 nm.
While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that these are by way of example only, and that the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the spirit and scope of the invention, and these changes and modifications are within the scope of the invention.
Claims (5)
1. A four-strain gap four-resistance grid type thin film strain sensor is characterized in that: the device comprises an H-shaped metal substrate (1), a rectangular transition film layer (2), a rectangular insulating film layer (3) and four nickel-chromium thin film resistance grids (4); the rectangular transition film layer (2) is deposited in the middle of the upper surface of the H-shaped metal substrate (1); the rectangular insulating film layer (3) is deposited on the upper surface of the rectangular transition film layer (2), and four strain gaps (5) distributed in a cross shape are formed in the surface of the rectangular insulating film layer (3) in a penetrating mode; the head ends of the four strain gaps (5) are all closed; the tail ends of the four strain gaps (5) penetrate through the middles of the four end faces of the rectangular insulating film layer (3) in a one-to-one correspondence manner; the four nickel-chromium thin-film resistance grids (4) are deposited on the upper surface of the rectangular insulating film layer (3), and the four nickel-chromium thin-film resistance grids (4) are distributed in a cross shape; the four nickel-chromium thin film resistance grids (4) are located above the four strain gaps (5) in a one-to-one correspondence mode, and the four nickel-chromium thin film resistance grids (4) are connected together through a lead to form a Wheatstone bridge circuit.
2. A four-strain gap four-resistor gate thin film strain sensor as claimed in claim 1, wherein: the H-shaped metal substrate (1) is made of 304 stainless steel, copper or aluminum, and the thickness of the H-shaped metal substrate is 0.5 mm-1 mm; the rectangular transition film layer (2) is made of titanium nitride or aluminum oxide, and the thickness of the rectangular transition film layer is 500-800 nm; the rectangular insulating film layer (3) is made of silicon nitride or silicon dioxide, and the thickness of the rectangular insulating film layer is 200 nm-300 nm; the thicknesses of the four nickel-chromium thin film resistance grids (4) are all 800 nm-1000 nm.
3. A four-strain gap four-resistor gate thin film strain sensor as claimed in claim 1, wherein: each nickel-chromium thin film resistance grid (4) comprises twenty-nine long grids and twenty-eight short grids; each long grid is 4mm in length, 0.1mm in width and 55 omega in resistance value; the length of each short gate is 0.4mm, the width is 0.4mm, and the resistance value is 1.375 omega.
4. A method of manufacturing a four-strain gap four-resistance gate thin film strain sensor, the method being used to manufacture a four-strain gap four-resistance gate thin film strain sensor according to claim 1, wherein: the method is realized by adopting the following steps:
the method comprises the following steps: respectively manufacturing a metal mask A and a metal mask B;
the metal mask A comprises a rectangular plate body A (601); two strip-shaped positioning bosses A (602) which are symmetrically distributed in the front-back direction are arranged on the edge of the lower surface of the rectangular plate body A (601) in an extending manner; the middle part of the surface of the rectangular plate body A (601) is provided with a rectangular window (603) in a penetrating way; the middle parts of four wall surfaces of the rectangular window (603) are respectively provided with a cantilever beam (604) in an extending way, and the four cantilever beams (604) are distributed in a cross shape;
the metal mask B comprises a rectangular plate body B (701); two strip-shaped positioning bosses B (702) which are symmetrically distributed in the front-back direction are arranged on the edge of the lower surface of the rectangular plate body B (701) in an extending manner; the middle part of the surface of the rectangular plate body B (701) is provided with four strip-shaped windows (703) which are distributed in a cross shape in a penetrating way;
step two: selecting an H-shaped metal substrate (1), and cleaning the H-shaped metal substrate (1);
step three: depositing a rectangular transition film layer (2) in the middle of the upper surface of an H-shaped metal substrate (1), thereby obtaining a double-layer composite structure;
step four: placing a metal mask A above the double-layer composite structure, on one hand, respectively embedding two strip-shaped positioning bosses A (602) in two notches of the H-shaped metal substrate (1), and on the other hand, exposing the rectangular transition film layer (2) through the rectangular window (603);
then, depositing a rectangular insulating film layer (3) on the upper surface of the rectangular transition film layer (2), thereby obtaining a three-layer composite structure; in the deposition process, four strain gaps (5) distributed in a cross shape are formed on the surface of the rectangular insulating film layer (3) due to shielding of the four cantilever beams (604);
step five: removing the metal mask A from the upper part of the three-layer composite structure to expose the four strain gaps (5);
step six: placing a metal mask B above the three-layer composite structure, so that two strip-shaped positioning bosses B (702) are respectively embedded in two openings of the H-shaped metal substrate (1) on one hand, and four strain gaps (5) are exposed through four strip-shaped windows (703) in a one-to-one correspondence manner on the other hand;
then, four strip-shaped sacrificial film layers (8) are deposited in the four strain gaps (5) in a one-to-one correspondence manner, so that a three-layer composite structure with the sacrificial film layers is obtained;
step seven: removing the metal mask B from the upper part of the three-layer composite structure with the sacrificial film layers to expose the four strip-shaped sacrificial film layers (8);
step eight: depositing a nickel-chromium sensitive film layer on the upper surface of the rectangular insulating film layer (3) and the upper surfaces of the four strip-shaped sacrificial film layers (8), and etching the nickel-chromium sensitive film layer into four nickel-chromium thin film resistor gates (4) by adopting a photoetching process and an ion beam etching process;
step nine: and removing the four strip-shaped sacrificial film layers (8) by adopting a wet etching process, thereby preparing the four-strain-gap four-resistance grid type thin film strain sensor.
5. The method for preparing a four-strain gap four-resistance gate type thin film strain sensor according to claim 4, wherein: the thickness of the metal mask A and the thickness of the metal mask B are both 1 mm-2 mm; the four strip-shaped sacrificial film layers (8) are all made of tin, silicon or aluminum, and the thicknesses of the four strip-shaped sacrificial film layers are 200 nm-300 nm; the thickness of the nickel-chromium sensitive film layer is 800 nm-1000 nm.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115876071A (en) * | 2023-03-08 | 2023-03-31 | 中北大学 | Hollowed-out four-resistance-grid type thin film strain sensor and preparation method thereof |
| CN115901037A (en) * | 2022-10-28 | 2023-04-04 | 电子科技大学 | Film strain gauge for cutting force measurement and preparation method thereof |
| CN115945966A (en) * | 2023-03-10 | 2023-04-11 | 中北大学 | Milling force measuring cutter system with inserted elastic beam structure |
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| CN115901037A (en) * | 2022-10-28 | 2023-04-04 | 电子科技大学 | Film strain gauge for cutting force measurement and preparation method thereof |
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| CN115945966B (en) * | 2023-03-10 | 2023-05-12 | 中北大学 | Milling force measuring tool system with embedded elastic beam structure |
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