CN113984253A - Preparation method of resistance strain gate sensor - Google Patents
Preparation method of resistance strain gate sensor Download PDFInfo
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- CN113984253A CN113984253A CN202111236613.1A CN202111236613A CN113984253A CN 113984253 A CN113984253 A CN 113984253A CN 202111236613 A CN202111236613 A CN 202111236613A CN 113984253 A CN113984253 A CN 113984253A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 79
- 239000002184 metal Substances 0.000 claims abstract description 79
- 238000011065 in-situ storage Methods 0.000 claims abstract description 15
- 230000002195 synergetic effect Effects 0.000 claims abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 26
- 229910045601 alloy Inorganic materials 0.000 claims description 22
- 239000000956 alloy Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 17
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000004806 packaging method and process Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910000570 Cupronickel Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 5
- 229920000098 polyolefin Polymers 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 4
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010959 steel Substances 0.000 claims description 4
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910000639 Spring steel Inorganic materials 0.000 claims description 3
- 229910001315 Tool steel Inorganic materials 0.000 claims description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 238000007750 plasma spraying Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 229920002689 polyvinyl acetate Polymers 0.000 claims description 3
- 239000011118 polyvinyl acetate Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims 1
- 229920002635 polyurethane Polymers 0.000 claims 1
- 238000002203 pretreatment Methods 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000032683 aging Effects 0.000 abstract description 3
- 229920000297 Rayon Polymers 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 229920001971 elastomer Polymers 0.000 abstract description 2
- 239000000806 elastomer Substances 0.000 abstract description 2
- 230000035882 stress Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000012544 monitoring process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910000746 Structural steel Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
- G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
The invention discloses a preparation method of a resistance strain gate sensor, which is used for preparing a high-precision resistance strain gate sensor and comprises the following steps of S1: performing a first treatment on the surface of the metal base layer to realize in-situ preparation of an insulating layer covering the metal base layer, and performing step S2: and performing second treatment on the surface of one side of the insulating layer, which is far away from the metal base layer, to realize in-situ preparation of the metal sensitive grid on the insulating layer, wherein the metal sensitive grid is linked with the deformation of the metal base layer, so that the metal sensitive grid generates synergistic deformation along with the deformation of the metal base layer. The invention discloses a preparation method of a resistance strain grating sensor, which is used for overcoming the defects of poor cooperative deformation of a sensitive grating and an elastomer, deformation and aging of viscose, difficulty in pasting on workpieces with complicated structural shapes and small sizes and the like of the conventional sensor with a bonding layer structure.
Description
Technical Field
The invention belongs to the technical field of strain sensors, and particularly relates to a preparation method of a resistance strain gate sensor.
Background
Large building structures, infrastructure and mechanical equipment can be damaged to different degrees due to various factors such as nature, human factors and aging in the using process, and the damage is accumulated continuously to cause failure and serious disaster accidents. Therefore, the stress state of the facility structures in the actual use process needs to be monitored in real time. The rapid development of the internet of things provides a good opportunity for acquiring real-time state information of important infrastructure. The monitoring system based on the internet of things technology mainly depends on sensing equipment to transmit and exchange information, dynamic data of a target facility are collected in real time through various sensors, and sensing data are converged and transmitted to a monitoring cloud platform through a wireless multi-level network to be analyzed and processed, so that real-time monitoring and early warning of the safety condition of the facility are achieved. Therefore, the reasonable design of the structure of the sensor and the effective collection of necessary structural stress information become the premise for the health and safety monitoring of the target facility.
Most of the existing stress-strain sensors are formed by adhering a prefabricated strain gauge on the surface of a workpiece through viscose, such as: CN105424238B (stress strain sensor), its technical solution discloses "bonding between the protective cladding and the working cladding by adhesive";
CN103471733B (a sensor structure for long-term stress measurement of deepwater ocean engineering structure), the technical proposal discloses that a resistance strain gauge is adhered on the temperature compensation plate "
CN206862545U (a stress implementation monitoring system of a support system), the technical scheme thereof discloses that the stress strain gauge is pasted on the outer wall of the experimental section at the position corresponding to the opening door;
therefore, after the monitored component is deformed by stress, the sensitive grid can also be deformed cooperatively, so that the change of a sensitive grid signal (resistance and the like) is caused, and the output voltage or current of the external bridge is influenced. Although the sensor containing the bonding layer structure is widely applied, the sensitive grid is attached to the surface of a workpiece through the adhesive, the adhesive has certain hysteresis in transferring deformation, and the sensitive grid and the substrate cannot achieve good synergistic deformation; in an external environment for a long time, the adhesive is easy to age and creep, and errors can occur in the transmission deformation of the adhesive, so that the measurement is inaccurate; and because of the limitation of the manufacturing method of the sensor, the chip mounting on small workpieces with specific shapes is difficult, and the production efficiency is low.
Therefore, the above problems are further improved.
Disclosure of Invention
The invention mainly aims to provide a preparation method of a resistance strain grating sensor, which is used for overcoming the defects of poor cooperative deformation of a sensitive grating and an elastomer, adhesive deformation aging, difficulty in pasting on workpieces with complex structural shapes and small sizes and the like of the conventional sensor with a bonding layer structure.
In order to achieve the above object, the present invention provides a method for manufacturing a resistive strain gate sensor, which is used for manufacturing a high-precision resistive strain gate sensor, and comprises the following steps:
step S1: performing first treatment on the surface of the metal base layer to realize in-situ preparation of an insulating layer covering the metal base layer (the metal base layer has certain elasticity and can generate micro deformation under the action of force, the insulating layer has high insulating property, the shape and the area of the insulating layer are matched with those of the metal base layer, the thickness of the insulating layer is matched with the surface roughness of the metal base layer, and the insulating layer is as thin as possible and then covers the metal base layer);
step S2: performing second treatment on the surface of one side, far away from the metal base layer, of the insulating layer to realize in-situ preparation of the metal sensitive grid on the insulating layer, wherein the metal sensitive grid is linked with the deformation of the metal base layer, so that the metal sensitive grid generates synergistic deformation along with the deformation of the metal base layer (the metal sensitive grid can have good ductility);
step S3: performing third treatment on the surfaces of the insulating layer and the metal sensitive grid, which are far away from the metal base layer, so as to realize in-situ preparation of the packaging layer on the insulating layer and the metal sensitive grid (the shape, the area and the thickness of the packaging layer are determined according to actual requirements);
step S4: the metal sensitive grid is electrically connected with an external signal amplifying circuit through a welded lead (with low resistivity, the material is metal or alloy with low resistivity, such as copper or copper-nickel alloy), so that the electric signal generated by the metal sensitive grid is transmitted to the corresponding signal amplifying circuit.
As a further preferable mode of the above mode, the first treatment includes magnetron sputtering, electron beam evaporation, and plasma spraying (one of which is a treatment).
As a further preferable technical solution of the above technical solution, the second treatment includes magnetron sputtering, electron beam evaporation, and vacuum thermal evaporation coating (one of which is a treatment).
As a further preferable mode of the above mode, the third process includes vacuum thermal evaporation coating.
As a further preferable mode of the above mode, the metal base layer includes a composite structural steel, a stainless steel, a spring steel, a tool steel, a beryllium bronze, a titanium alloy, and an aluminum alloy (one of the materials).
As a further preferable mode of the above mode, the insulating layer includes aluminum oxide, silicon oxide, chromium oxide, silicon nitride, aluminum nitride, and silicon carbide (one of the materials).
As a further preferable technical solution of the above technical solution, the metal sensitive grid includes (one of) copper, nickel, copper-nickel alloy, chromium-nickel modified alloy, nickel-molybdenum alloy, iron-based alloy, platinum-based alloy, gold-based alloy, and palladium-based alloy.
As a further preferable technical solution of the above technical solution, the encapsulation layer includes Polyurethane (PU), Polyolefin (POE), and polyvinyl acetate (one of them).
As a more preferable embodiment of the above, step S1 is preceded by step S0: and (3) pretreating the surface of the metal base layer to realize in-situ preparation of a nickel coating on the surface of the metal base layer.
As a further preferable embodiment of the above-mentioned embodiment, the pretreatment includes electroplating nickel and electroless nickel plating.
The invention has the beneficial effects that: according to the resistance strain gate sensor prepared in situ by adopting the physical vapor deposition technology, because no bonding layer is arranged between the sensitive gate and the metal substrate, the sensitive gate is easier to generate cooperative deformation along with the stress of the substrate, the resistance value of the sensitive gate is changed along with the deformation, and the mechanical signal can be immediately converted into the electric signal. The sensor of the present invention has less strain-free transfer distortion, mechanical hysteresis, and creep.
Drawings
FIG. 1 is a schematic flow chart of a method for manufacturing a resistive strain gate sensor according to the present invention.
FIG. 2 is a graph comparing the performance of a method of making a resistive strain gate sensor according to the present invention.
The reference numerals include: 1. a metal base layer; 2. an insulating layer; 3. a metal sensitive grid; 4. a packaging layer; 5. a wire; 6. an external signal amplifying circuit.
Detailed Description
The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.
In the preferred embodiment of the present invention, those skilled in the art should note that the lead and the external signal amplifying circuit, etc. related to the present invention can be regarded as the prior art.
Preferred embodiments.
The invention discloses a preparation method of a resistance strain gate sensor, which is used for preparing a high-precision resistance strain gate sensor and comprises the following steps:
step S1: performing first treatment on the surface of the metal base layer 1 to realize in-situ preparation of an insulating layer 2 covering the metal base layer 1 (the metal base layer has certain elasticity and can generate micro deformation under the action of force, the insulating layer has high insulating property, the shape and the area of the insulating layer are matched with those of the metal base layer, the thickness of the insulating layer is matched with the surface roughness of the metal base layer, and the insulating layer is as thin as possible and then covers the metal base layer);
step S2: performing second treatment on the surface of one side, far away from the metal base layer 1, of the insulating layer 2 to realize in-situ preparation of the metal sensitive grid 3 on the insulating layer 2, wherein the metal sensitive grid 3 is linked with the deformation of the metal base layer 1, so that the metal sensitive grid 2 generates synergistic deformation along with the deformation of the metal base layer 1 (the metal sensitive grid can have good ductility);
step S3: performing third treatment on the surfaces of the insulating layer 2 and the metal sensitive grid 3, which are far away from the metal base layer 1, to realize in-situ preparation of the packaging layer 4 (the shape, the area and the thickness of the packaging layer are determined according to actual requirements) on the insulating layer 2 and the metal sensitive grid 3;
step S4: the metal sensitive grid 3 is electrically connected with an external signal amplifying circuit 6 through a welded lead 5 (which has low resistivity and is made of metal or alloy with low resistivity, such as copper or copper-nickel alloy), so that the electric signal generated by the metal sensitive grid 3 is transmitted to the corresponding signal amplifying circuit 6.
Specifically, the first treatment includes magnetron sputtering, electron beam evaporation, and plasma spraying (one of which is a technique for performing treatment).
More specifically, the second process includes magnetron sputtering, electron beam evaporation, and vacuum thermal evaporation coating (one of which performs the process).
Further, the third treatment comprises vacuum thermal evaporation coating.
Still further, the metal substrate includes structural alloy steel, stainless steel, spring steel, tool steel, beryllium copper, titanium alloy, and aluminum alloy (one of the materials).
Preferably, the metal base layer is made of any one of the following materials:
1) composite structural steels such as 40 CrNiMoA;
2) stainless steels such as 0Cr17Ni4Cu4 Nb;
3) spring steels, such as 50CrVA, 65 Mn;
4) tool steels such as 9 CrWMn;
5) beryllium bronzes, such as QBe 2;
6) titanium alloys, such as Tc4, Tc 9; and
7) aluminum alloys such as LY 12.
Preferably, the insulating layer comprises aluminum oxide, silicon oxide, chromium oxide, silicon nitride, aluminum nitride, and silicon carbide.
Preferably, the metal sensitive grid comprises copper, nickel, copper-nickel alloy, chromium-nickel modified alloy, nickel-molybdenum alloy, iron-based alloy, platinum-based alloy, gold-based alloy and palladium-based alloy (one of the materials).
Preferably, the encapsulation layer includes Polyurethane (PU), Polyolefin (POE), and polyvinyl acetate (one of the materials).
Preferably, step S1 is preceded by step S0: the surface of the metal base layer is pretreated to realize the in-situ preparation of the nickel coating on the surface of the metal base layer (the preparation of an insulating layer, a metal sensitive grid and a packaging layer is carried out on the basis of the nickel coating, the left and right sides of the nickel coating are 1, the protection effect on the metal base layer is achieved, 2, the bonding capability of adjacent layers is improved, and 3, the surface is flat and smooth, so that the subsequent film layer is favorably prepared).
Preferably, the pretreatment includes (one of) electroplating nickel and electroless nickel.
Preferably, as shown in fig. 2, the performance of the high-precision resistive strain gauge sensor prepared by the invention is compared with that of a sensor prepared by a traditional strain gauge attaching technology, so that the high-precision resistive strain gauge sensor prepared by the invention has higher precision and smaller creep deformation.
Preferably, the invention also discloses a high-precision resistance strain gate sensor which comprises a metal base layer 1, an insulating layer 2, a metal sensitive gate 3, a packaging layer 4, a lead 5 and an external signal amplifying circuit 6.
It should be noted that the technical features of the lead and the external signal amplifying circuit related to the present invention should be regarded as the prior art, and the specific structure, the operation principle, the control mode and the spatial arrangement mode of the technical features may be selected conventionally in the field, and should not be regarded as the invention point of the present invention, and the present invention is not further specifically described in detail.
It will be apparent to those skilled in the art that modifications and equivalents may be made in the embodiments and/or portions thereof without departing from the spirit and scope of the present invention.
Claims (10)
1. A preparation method of a resistance strain gate sensor is used for preparing a high-precision resistance strain gate sensor and is characterized by comprising the following steps:
step S1: performing first treatment on the surface of the metal base layer to realize in-situ preparation of an insulating layer covering the metal base layer;
step S2: performing second treatment on the surface of one side, far away from the metal base layer, of the insulating layer to realize in-situ preparation of the metal sensitive grid on the insulating layer, wherein the metal sensitive grid is linked with the deformation of the metal base layer, so that the metal sensitive grid generates synergistic deformation along with the deformation of the metal base layer;
step S3: performing third treatment on the surfaces of the insulating layer and the metal sensitive grid, which are far away from the metal base layer, so as to realize in-situ preparation of the packaging layer on the insulating layer and the metal sensitive grid;
step S4: the metal sensitive grid is electrically connected with an external signal amplifying circuit through a welded lead, so that the electric signal generated by the metal sensitive grid is transmitted to the corresponding signal amplifying circuit.
2. The method of claim 1, wherein the first process comprises magnetron sputtering, electron beam evaporation, and plasma spraying.
3. The method of claim 2, wherein the second process comprises magnetron sputtering, electron beam evaporation and vacuum thermal evaporation coating.
4. A method of manufacturing a resistive strain gate sensor according to claim 3, wherein the third process comprises vacuum thermal evaporation coating.
5. A method of making a resistive strain grating sensor according to any of claims 1 to 4, wherein the metal substrate comprises composite steel, stainless steel, spring steel, tool steel, beryllium copper, titanium alloys and aluminium alloys.
6. The method of claim 5, wherein the insulating layer comprises alumina, silica, chromia, silicon nitride, aluminum nitride, and silicon carbide.
7. The method of claim 6, wherein the metal-sensitive grating comprises copper, nickel, copper-nickel alloy, chromium-nickel modified alloy, nickel-molybdenum alloy, iron-based alloy, platinum-based alloy, gold-based alloy, and palladium-based alloy.
8. The method of claim 7, wherein the encapsulation layer comprises polyurethane, polyolefin, and polyvinyl acetate.
9. The method of claim 1, further comprising step S0 before step S1: and (3) pretreating the surface of the metal base layer to realize in-situ preparation of a nickel coating on the surface of the metal base layer.
10. A method of making a resistive strain gate sensor according to claim 9, wherein the pre-treatment comprises electro-and electroless nickel plating.
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