CN103674357A - Film force-measuring sensor of embedded cutting tool type, and preparation method thereof - Google Patents
Film force-measuring sensor of embedded cutting tool type, and preparation method thereof Download PDFInfo
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- CN103674357A CN103674357A CN201310715719.9A CN201310715719A CN103674357A CN 103674357 A CN103674357 A CN 103674357A CN 201310715719 A CN201310715719 A CN 201310715719A CN 103674357 A CN103674357 A CN 103674357A
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Abstract
The invention relates to a cutting-force measuring technique, particularly to a film force-measuring sensor of an embedded cutting tool type, and a preparation method thereof. The film force-measuring sensor solves the problems of large volume, low measuring accuracy, low sensitivity, complex structure and high manufacturing cost of the existing force measuring instrument. The film force-measuring sensor of the embedded cutting tool type comprises a substrate, a film insulating layer is formed on the upper surface of the substrate, and four film resistor grids and eight film electrodes are formed on the upper surface of the film insulating layer, wherein two film resistor grids are longitudinally distributed on the upper surface of the film insulating layer, and are symmetrical relative to the width center line of the film insulating layer; the other two film resistor bars are transversely distributed on the upper surface of the film insulating layer, and are symmetrical relative to the width center line of the film insulating layer; both ends of each of the four film resistor bars are correspondingly connected with the eight film electrodes. The film force-measuring sensor applies to precise and ultra precise cutting process.
Description
Technical field
The present invention relates to cutting force measurement technology, specifically a kind of thin-film force transducer that embeds cutter formula and preparation method thereof.
Background technology
In precision, Ultra-precision machining process, cutting force is directly reflecting the working condition of cutter.Therefore, cutting force measurement for the control of cutting quality, the predictions of cutter life etc. are all significant.Under prior art condition, cutting force measurement is generally realized by dynamometer.Yet existing dynamometer is many to be comprised of various discrete components, there are the following problems to cause it: one, volume is larger, causes it cannot meet the measurement requirement of microminiaturization.Its two, measuring accuracy and sensitivity are lower, cause it cannot meet high precision, high-resolution measurement requirement.Its three, complex structure, manufacturing cost are higher, cause it cannot meet high reliability, measure requirement cheaply.Based on this, be necessary to invent a kind of brand-new cutting force measurement device, to solve, existing dynamometer volume is large, measuring accuracy and sensitivity is low, complex structure, problem that manufacturing cost is high.
Summary of the invention
In order to solve, existing dynamometer volume is large in the present invention, measuring accuracy and sensitivity is low, complex structure, problem that manufacturing cost is high, and a kind of thin-film force transducer that embeds cutter formula and preparation method thereof is provided.
The present invention adopts following technical scheme to realize: a kind of thin-film force transducer that embeds cutter formula, comprises substrate; The upper surface of substrate is formed with thin dielectric film; The upper surface of thin dielectric film is formed with four sheet resistance grid and eight membrane electrodes; Wherein two sheet resistance grid are all longitudinally distributed in the upper surface of thin dielectric film, and the position of these two sheet resistance grid is symmetrical about the width centreline of thin dielectric film; The equal cross direction profiles of two other sheet resistance grid is in the upper surface of thin dielectric film, and the position of these two sheet resistance grid is symmetrical about the width centreline of thin dielectric film; The two ends of four sheet resistance grid and eight membrane electrodes connect one to one; The upper surface of four sheet resistance grid is formed with thinfilm protective coating; Eight membrane electrodes are all exposed to outside thinfilm protective coating; The upper surface of eight membrane electrodes is respectively connected with a wire.
During work, substrate welds is fixed on to the handle of a knife position of cutter, and by wire, four sheet resistance grid and external voltage table is connected and composed to Wheatstone bridge, as shown in Figure 5.Specific works process is as follows: when Tool in Cutting workpiece, the suffered cutting force of cutter causes four sheet resistance grid that deformation all occurs.Now, the deformation quantity of two sheet resistance grid longitudinally distributing and the deformation quantity of two sheet resistance grid of cross direction profiles are unequal, cause Wheatstone bridge to produce output voltage.By external voltage table, measure in real time this output voltage, can calculate in real time according to this output voltage the size of the suffered cutting force of cutter, realize thus cutting force measurement.In this process, the effect of thin dielectric film is to make to realize and insulating between four sheet resistance grid, eight membrane electrodes.The effect of thinfilm protective coating is four sheet resistance grid of protection.Based on said process, compare with existing dynamometer, a kind of thin-film force transducer tool that embeds cutter formula of the present invention has the following advantages: one, a kind of thin-film force transducer that embeds cutter formula of the present invention is by adopting membrane structure, effectively reduce own vol, thereby met the measurement requirement of microminiaturization completely.They are two years old, a kind of thin-film force transducer that embeds cutter formula of the present invention is by adopting four sheet resistance grid and Wheatstone bridge to measure in real time cutting force, effectively improve measuring accuracy and sensitivity, thereby met high precision, high-resolution measurement requirement completely.Its three, a kind of thin-film force transducer that embeds cutter formula of the present invention, by adopting membrane structure, has effectively been simplified self structure, and has been effectively reduced manufacturing cost, thereby has met high reliability completely, measure requirement cheaply.In sum, a kind of thin-film force transducer that embeds cutter formula of the present invention is based on brand new, efficiently solve that existing dynamometer volume is large, measuring accuracy and sensitivity is low, complex structure, problem that manufacturing cost is high, simultaneously it has been realized cutter and has been changed to intelligentized perceptional function by the simple function of cut, has met the various measurement requirements in accurate, Ultra-precision machining process completely.
Further, the material of described substrate is No. 45 steel; The material of described thin dielectric film is Si
3n
4; The material of described four sheet resistance grid is Ni-Cr alloy; The material of described eight membrane electrodes is Ni-Cr alloy; The material of described thinfilm protective coating is Si
3n
4; The material of described eight wires is copper.
Further, described substrate is square substrates, and its length is 15mm, and width is 15mm, and thickness is 1mm; Described thin dielectric film is square film insulation course, and its length is 15mm, and width is 15mm, and thickness is 500-1000nm; Described four sheet resistance grid are rectangle sheet resistance grid, and its length is 2.55mm, and width is 2mm, and thickness is 400nm; Described eight membrane electrodes are square film electrode, and its length is 2mm, and width is 2mm, and thickness is 400nm; Described thinfilm protective coating is square film protective seam, and its thickness is 500-1000nm; The sectional area of described eight wires is 1.0 * 10
-4mm
2.
A kind of preparation method's (the method is for the preparation of a kind of thin-film force transducer that embeds cutter formula of the present invention) who embeds the thin-film force transducer of cutter formula, the method is to adopt following steps to realize:
A. prepare substrate;
B. the upper surface at substrate forms thin dielectric film;
C. the upper surface at thin dielectric film forms film sensitive layer, and forms four sheet resistance grid and eight membrane electrodes at the photomask surface of film sensitive layer;
D. the upper surface at four sheet resistance grid forms thinfilm protective coating, and guarantees that eight membrane electrodes are all exposed to outside thinfilm protective coating;
E. the upper surface at eight membrane electrodes respectively connects a wire.
In described step a, prepare substrate and comprise the following steps: first, choose No. 45 steel as raw material; Then, No. 45 steel are carried out to modified, line cutting, grinding, grinding and polishing, surface treatment successively, No. 45 steel is made into substrate thus.
In described step b, at the upper surface of substrate, form thin dielectric film and comprise the following steps: first, choose purity and be 99% Si
3n
4; Then, by Dual ion beam sputtering deposition technique by Si
3n
4be deposited on the upper surface of substrate, Si
3n
4form thus thin dielectric film.
In described step c, at the upper surface formation film sensitive layer of thin dielectric film, and comprise the following steps at photomask surface four sheet resistance grid of formation and eight membrane electrodes of film sensitive layer: first, choose the Ni-Cr alloy of Ni80/Cr20; Then, by Dual ion beam sputtering deposition technique by Ni-Cr alloy deposition in the upper surface of thin dielectric film, Ni-Cr alloy forms film sensitive layer thus; Finally, by photoetching process, film sensitive layer is carried out to etching, and etching forms four sheet resistance grid and eight membrane electrodes.
In described steps d, at the upper surface of four sheet resistance grid, form thinfilm protective coating and comprise the following steps: first, choose purity and be 99% Si
3n
4; Then, by Dual ion beam sputtering deposition technique by Si
3n
4be deposited on the upper surface of four sheet resistance grid, Si
3n
4form thus thinfilm protective coating.
In described step e, by ultrasonic welding process, at the upper surface of eight membrane electrodes, respectively connect a copper wire.
The present invention is rational in infrastructure, it is ingenious to design, and efficiently solves that existing dynamometer volume is large, measuring accuracy and sensitivity is low, complex structure, problem that manufacturing cost is high, is applicable to precision, Ultra-precision machining.
Accompanying drawing explanation
Fig. 1 is a kind of one-piece construction schematic diagram that embeds the thin-film force transducer of cutter formula of the present invention.
Fig. 2 is a kind of Split type structure schematic diagram that embeds the thin-film force transducer of cutter formula of the present invention.
Fig. 3 is a kind of part-structure schematic diagram that embeds the thin-film force transducer of cutter formula of the present invention.
Fig. 4 is the sheet resistance grid of a kind of thin-film force transducer that embeds cutter formula of the present invention and the structural representation of membrane electrode.
Fig. 5 is the structural representation of the Wheatstone bridge of a kind of thin-film force transducer that embeds cutter formula of the present invention.
Fig. 6 is the preparation method's of a kind of thin-film force transducer that the embeds cutter formula of the present invention schematic diagram of step c.
Fig. 7 is the structural representation of the mask plate in the preparation method of a kind of thin-film force transducer that embeds cutter formula of the present invention.
In figure: 1-substrate, 2-thin dielectric film, 3-sheet resistance grid, 4-membrane electrode, 5-thinfilm protective coating, 6-wire, 7-film sensitive layer, 8-photoresist, 9-mask plate.
Embodiment
Embed a thin-film force transducer for cutter formula, comprise substrate 1; The upper surface of substrate 1 is formed with thin dielectric film 2; The upper surface of thin dielectric film 2 is formed with four sheet resistance grid 3 and eight membrane electrodes 4; Wherein two sheet resistance grid 3 are all longitudinally distributed in the upper surface of thin dielectric film 2, and the position of these two sheet resistance grid 3 is symmetrical about the width centreline of thin dielectric film 2; The equal cross direction profiles of two other sheet resistance grid 3 is in the upper surface of thin dielectric film 2, and the position of these two sheet resistance grid 3 is symmetrical about the width centreline of thin dielectric film 2; The two ends of four sheet resistance grid 3 and eight membrane electrodes 4 connect one to one; The upper surface of four sheet resistance grid 3 is formed with thinfilm protective coating 5; Eight membrane electrodes 4 are all exposed to outside thinfilm protective coating 5; The upper surface of eight membrane electrodes 4 is respectively connected with a wire 6.
The material of described substrate 1 is No. 45 steel; The material of described thin dielectric film 2 is Si
3n
4; The material of described four sheet resistance grid 3 is Ni-Cr alloy; The material of described eight membrane electrodes 4 is Ni-Cr alloy; The material of described thinfilm protective coating 5 is Si
3n
4; The material of described eight wires 6 is copper.
Described substrate 1 is square substrates, and its length is 15mm, and width is 15mm, and thickness is 1mm; Described thin dielectric film 2 is square film insulation course, and its length is 15mm, and width is 15mm, and thickness is 500-1000nm; Described four sheet resistance grid 3 are rectangle sheet resistance grid, and its length is 2.55mm, and width is 2mm, and thickness is 400nm; Described eight membrane electrodes 4 are square film electrode, and its length is 2mm, and width is 2mm, and thickness is 400nm; Described thinfilm protective coating 5 is square film protective seam, and its thickness is 500-1000nm; The sectional area of described eight wires 6 is 1.0 * 10
-4mm
2.
A kind of preparation method's (the method is for the preparation of a kind of thin-film force transducer that embeds cutter formula of the present invention) who embeds the thin-film force transducer of cutter formula, the method is to adopt following steps to realize:
A. prepare substrate 1;
B. the upper surface at substrate 1 forms thin dielectric film 2;
C. the upper surface at thin dielectric film 2 forms film sensitive layer 7, and forms four sheet resistance grid 3 and eight membrane electrodes 4 at the photomask surface of film sensitive layer 7;
D. the upper surface at four sheet resistance grid 3 forms thinfilm protective coating 5, and guarantees that eight membrane electrodes 4 are all exposed to outside thinfilm protective coating 5;
E. the upper surface at eight membrane electrodes 4 respectively connects a wire 6.
In described step a, prepare substrate 1 and comprise the following steps: first, choose No. 45 steel as raw material; Then, No. 45 steel are carried out to modified, line cutting, grinding, grinding and polishing, surface treatment successively, No. 45 steel is made into substrate 1 thus.
In described step b, at the upper surface of substrate 1, form thin dielectric film 2 and comprise the following steps: first, choose purity and be 99% Si
3n
4; Then, by Dual ion beam sputtering deposition technique by Si
3n
4be deposited on the upper surface of substrate 1, Si
3n
4form thus thin dielectric film 2.
In described step c, at the upper surface formation film sensitive layer 7 of thin dielectric film 2, and comprise the following steps at photomask surface four sheet resistance grid 3 of formation and eight membrane electrodes 4 of film sensitive layer 7: first, choose the Ni-Cr alloy of Ni80/Cr20; Then, by Dual ion beam sputtering deposition technique by Ni-Cr alloy deposition in the upper surface of thin dielectric film 2, Ni-Cr alloy forms film sensitive layer 7 thus; Finally, by photoetching process, film sensitive layer 7 is carried out to etching, and etching forms four sheet resistance grid 3 and eight membrane electrodes 4.
In described steps d, at the upper surface of four sheet resistance grid 3, form thinfilm protective coating 5 and comprise the following steps: first, choose purity and be 99% Si
3n
4; Then, by Dual ion beam sputtering deposition technique by Si
3n
4be deposited on the upper surface of four sheet resistance grid 3, Si
3n
4form thus thinfilm protective coating 5.
In described step e, by ultrasonic welding process, at the upper surface of eight membrane electrodes 4, respectively connect a copper wire 6.
During concrete enforcement, as shown in Figure 4, each sheet resistance grid forms by 18 resistor stripes, and the width of each resistor stripe is 0.05mm, and thickness is 400nm, and the interval of adjacent two resistor stripes is 0.05mm.The both sides of each sheet resistance grid are equipped with four semifixed resistor bars, and the width of each semifixed resistor bar is 0.05mm, and thickness is 400nm, by laser, blow the resistance that semifixed resistor bar is capable of regulating sheet resistance grid.Between the two ends of four sheet resistance grid and eight membrane electrodes, by eight contact resistance bars, connect one to one, the length of each contact resistance bar is 0.6mm, and width is 0.05mm, and thickness is 400nm.In described step a, the upper and lower surfaceness of substrate is 100nm.In described step b-d, the concrete technology parameter of Dual ion beam sputtering deposition technique is as follows: working gas is argon gas, and base vacuum degree is 9.0 * 10
-4pa, working pressure is 0.5Pa, and radio-frequency power is 180W, and oxygen argon is than being 1:9, and in sputter cup, pressure is less than 6.65 * 10
-3pa, during sputter, ar pressure is 3.33Pa, and target surface is 50mm to substrate spacing, and sputtering voltage is 420V, and sputtering current is 0.14A, sputtering time is 1 hour.In described step c, the concrete technology parameter of photoetching process is as follows: photoresist is S1813 photoresist, and the spin coating rotating speed of photoresist is 2500r/pm, and the spin coating time of photoresist is 30s, mask plate is silicon mask plate, use wavelength for 360nm, energy density be 5.5mWcm
2ultraviolet ray, the time shutter is 25s, development time is 120s, the post bake time is 30min, the time of removing photoresist is 40min.
Claims (9)
1. a thin-film force transducer that embeds cutter formula, is characterized in that: comprise substrate (1); The upper surface of substrate (1) is formed with thin dielectric film (2); The upper surface of thin dielectric film (2) is formed with four sheet resistance grid (3) and eight membrane electrodes (4); Wherein two sheet resistance grid (3) are all longitudinally distributed in the upper surface of thin dielectric film (2), and the position of these two sheet resistance grid (3) is symmetrical about the width centreline of thin dielectric film (2); The equal cross direction profiles of two other sheet resistance grid (3) is in the upper surface of thin dielectric film (2), and the position of these two sheet resistance grid (3) is symmetrical about the width centreline of thin dielectric film (2); The two ends of four sheet resistance grid (3) and eight membrane electrodes (4) connect one to one; The upper surface of four sheet resistance grid (3) is formed with thinfilm protective coating (5); Eight membrane electrodes (4) are all exposed to outside thinfilm protective coating (5); The upper surface of eight membrane electrodes (4) is respectively connected with a wire (6).
2. a kind of thin-film force transducer that embeds cutter formula according to claim 1, is characterized in that: the material of described substrate (1) is No. 45 steel; The material of described thin dielectric film (2) is Si
3n
4; The material of described four sheet resistance grid (3) is Ni-Cr alloy; The material of described eight membrane electrodes (4) is Ni-Cr alloy; The material of described thinfilm protective coating (5) is Si
3n
4; The material of described eight wires (6) is copper.
3. a kind of thin-film force transducer that embeds cutter formula according to claim 1 and 2, is characterized in that: described substrate (1) is square substrates, and its length is 15mm, and width is 15mm, and thickness is 1mm; Described thin dielectric film (2) is square film insulation course, and its length is 15mm, and width is 15mm, and thickness is 500-1000nm; Described four sheet resistance grid (3) are rectangle sheet resistance grid, and its length is 2.55mm, and width is 2mm, and thickness is 400nm; Described eight membrane electrodes (4) are square film electrode, and its length is 2mm, and width is 2mm, and thickness is 400nm; Described thinfilm protective coating (5) is square film protective seam, and its thickness is 500-1000nm; The sectional area of described eight wires (6) is 1.0 * 10
-4mm
2.
4. embed a preparation method for the thin-film force transducer of cutter formula, the method, for the preparation of a kind of thin-film force transducer that embeds cutter formula as claimed in claim 1, is characterized in that: the method is to adopt following steps to realize:
A. prepare substrate (1);
B. the upper surface at substrate (1) forms thin dielectric film (2);
C. the upper surface at thin dielectric film (2) forms film sensitive layer (7), and forms four sheet resistance grid (3) and eight membrane electrodes (4) at the photomask surface of film sensitive layer (7);
D. the upper surface at four sheet resistance grid (3) forms thinfilm protective coating (5), and guarantees that eight membrane electrodes (4) are all exposed to outside thinfilm protective coating (5);
E. the upper surface at eight membrane electrodes (4) respectively connects a wire (6).
5. a kind of preparation method who embeds the thin-film force transducer of cutter formula according to claim 4, is characterized in that: in described step a, prepare substrate (1) and comprise the following steps: first, choose No. 45 steel as raw material; Then, No. 45 steel are carried out to modified, line cutting, grinding, grinding and polishing, surface treatment successively, No. 45 steel is made into substrate (1) thus.
6. a kind of preparation method who embeds the thin-film force transducer of cutter formula according to claim 4, it is characterized in that: in described step b, at the upper surface of substrate (1), forming thin dielectric film (2) comprises the following steps: first, choose purity and be 99% Si
3n
4; Then, by Dual ion beam sputtering deposition technique by Si
3n
4be deposited on the upper surface of substrate (1), Si
3n
4form thus thin dielectric film (2).
7. a kind of preparation method who embeds the thin-film force transducer of cutter formula according to claim 4, it is characterized in that: in described step c, upper surface at thin dielectric film (2) forms film sensitive layer (7), and comprise the following steps at photomask surface formation four sheet resistance grid (3) and eight membrane electrodes (4) of film sensitive layer (7): first, choose the Ni-Cr alloy of Ni80/Cr20; Then, by Dual ion beam sputtering deposition technique by Ni-Cr alloy deposition in the upper surface of thin dielectric film (2), Ni-Cr alloy forms film sensitive layer (7) thus; Finally, by photoetching process, film sensitive layer (7) is carried out to etching, and etching forms four sheet resistance grid (3) and eight membrane electrodes (4).
8. a kind of preparation method who embeds the thin-film force transducer of cutter formula according to claim 4; it is characterized in that: in described steps d; at the upper surface of four sheet resistance grid (3), forming thinfilm protective coating (5) comprises the following steps: first, choose purity and be 99% Si
3n
4; Then, by Dual ion beam sputtering deposition technique by Si
3n
4be deposited on the upper surface of four sheet resistance grid (3), Si
3n
4form thus thinfilm protective coating (5).
9. a kind of preparation method who embeds the thin-film force transducer of cutter formula according to claim 4, is characterized in that: in described step e, by ultrasonic welding process, at the upper surface of eight membrane electrodes (4), respectively connect a copper wire (6).
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|---|---|---|---|
| CN201310715719.9A CN103674357B (en) | 2013-12-23 | 2013-12-23 | A kind ofly embed thin-film force transducer of cutter formula and preparation method thereof |
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|---|---|---|---|
| CN201310715719.9A CN103674357B (en) | 2013-12-23 | 2013-12-23 | A kind ofly embed thin-film force transducer of cutter formula and preparation method thereof |
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| CN103674357B CN103674357B (en) | 2015-09-02 |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104034476A (en) * | 2014-06-04 | 2014-09-10 | 西北工业大学 | Magnetic resonance testing device of film type force sensor |
| CN108279131A (en) * | 2018-02-13 | 2018-07-13 | 中国汽车工程研究院股份有限公司 | The test method for working condition measurement device and the operating mode of overtaking other vehicles of overtaking other vehicles |
| CN108885165A (en) * | 2016-03-31 | 2018-11-23 | 京瓷株式会社 | Strain gauge |
| CN110788670A (en) * | 2019-09-25 | 2020-02-14 | 北京石墨烯技术研究院有限公司 | Cutter wear monitoring system based on graphene sensor |
| CN112317785A (en) * | 2020-11-02 | 2021-02-05 | 中北大学 | Turning force measuring tool system with insert-insert fastening type sensitive structure |
| CN112317786A (en) * | 2020-11-02 | 2021-02-05 | 中北大学 | Turning force measuring tool system with direct inserting type sensitive structure |
| CN113432772A (en) * | 2021-06-17 | 2021-09-24 | 中北大学 | High-sensitivity thin film sensor for measuring object surface shock wave and manufacturing method thereof |
| CN113798921A (en) * | 2021-10-18 | 2021-12-17 | 电子科技大学 | Milling force measuring instrument based on film strain gauge |
| CN114001639A (en) * | 2021-11-19 | 2022-02-01 | 中北大学 | Four-strain-gap four-resistance-gate type thin film strain sensor and preparation method thereof |
| CN114083005A (en) * | 2021-12-14 | 2022-02-25 | 北京石墨烯技术研究院有限公司 | Turning device |
| CN115876071A (en) * | 2023-03-08 | 2023-03-31 | 中北大学 | Hollowed-out four-resistance-grid type thin film strain sensor and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104034476A (en) * | 2014-06-04 | 2014-09-10 | 西北工业大学 | Magnetic resonance testing device of film type force sensor |
| CN104034476B (en) * | 2014-06-04 | 2015-11-18 | 西北工业大学 | The magnetic resonance proving installation of diaphragm type force snesor |
| CN108885165A (en) * | 2016-03-31 | 2018-11-23 | 京瓷株式会社 | Strain gauge |
| CN108279131A (en) * | 2018-02-13 | 2018-07-13 | 中国汽车工程研究院股份有限公司 | The test method for working condition measurement device and the operating mode of overtaking other vehicles of overtaking other vehicles |
| CN110788670A (en) * | 2019-09-25 | 2020-02-14 | 北京石墨烯技术研究院有限公司 | Cutter wear monitoring system based on graphene sensor |
| CN112317786A (en) * | 2020-11-02 | 2021-02-05 | 中北大学 | Turning force measuring tool system with direct inserting type sensitive structure |
| CN112317785A (en) * | 2020-11-02 | 2021-02-05 | 中北大学 | Turning force measuring tool system with insert-insert fastening type sensitive structure |
| CN112317786B (en) * | 2020-11-02 | 2021-08-27 | 中北大学 | Turning force measuring tool system with direct inserting type sensitive structure |
| CN113432772A (en) * | 2021-06-17 | 2021-09-24 | 中北大学 | High-sensitivity thin film sensor for measuring object surface shock wave and manufacturing method thereof |
| CN113432772B (en) * | 2021-06-17 | 2023-09-08 | 中北大学 | High-sensitivity film sensor for measuring object surface shock wave and manufacturing method thereof |
| CN113798921A (en) * | 2021-10-18 | 2021-12-17 | 电子科技大学 | Milling force measuring instrument based on film strain gauge |
| CN114001639A (en) * | 2021-11-19 | 2022-02-01 | 中北大学 | Four-strain-gap four-resistance-gate type thin film strain sensor and preparation method thereof |
| CN114083005A (en) * | 2021-12-14 | 2022-02-25 | 北京石墨烯技术研究院有限公司 | Turning device |
| CN115876071A (en) * | 2023-03-08 | 2023-03-31 | 中北大学 | Hollowed-out four-resistance-grid type thin film strain sensor and preparation method thereof |
| CN115876071B (en) * | 2023-03-08 | 2023-05-12 | 中北大学 | Hollowed-out four-resistance grid type thin film strain sensor and preparation method thereof |
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