CN1139819A - 一种电介质，其制造方法，和半导体器件 - Google Patents

一种电介质，其制造方法，和半导体器件 Download PDF

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Publication number
CN1139819A
CN1139819A CN96102557A CN96102557A CN1139819A CN 1139819 A CN1139819 A CN 1139819A CN 96102557 A CN96102557 A CN 96102557A CN 96102557 A CN96102557 A CN 96102557A CN 1139819 A CN1139819 A CN 1139819A
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CN
China
Prior art keywords
film
dielectric
sif
sih
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN96102557A
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English (en)
Chinese (zh)
Inventor
福田琢也
金井史幸
加藤圣隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN1139819A publication Critical patent/CN1139819A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10P14/6336—
    • H10P14/6682—
    • H10P14/6686—
    • H10W20/071—
    • H10W20/48—
    • H10W70/69—
    • H10P14/69215—
    • H10P14/6922—
    • H10P14/6924—

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
CN96102557A 1995-02-28 1996-02-27 一种电介质，其制造方法，和半导体器件 Pending CN1139819A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3968795 1995-02-28
JP39687/95 1995-02-28

Publications (1)

Publication Number Publication Date
CN1139819A true CN1139819A (zh) 1997-01-08

Family

ID=12559985

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96102557A Pending CN1139819A (zh) 1995-02-28 1996-02-27 一种电介质，其制造方法，和半导体器件

Country Status (5)

Country Link
EP (1) EP0730298A3 (cg-RX-API-DMAC10.html)
KR (1) KR960032507A (cg-RX-API-DMAC10.html)
CN (1) CN1139819A (cg-RX-API-DMAC10.html)
SG (1) SG44710A1 (cg-RX-API-DMAC10.html)
TW (1) TW302525B (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113892153A (zh) * 2019-07-09 2022-01-04 株式会社村田制作所 薄膜电容器以及薄膜电容器用薄膜
CN114394597A (zh) * 2022-01-24 2022-04-26 贵州理工学院 一种利用四氟化硅为原料制备硅薄膜的方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3178375B2 (ja) * 1997-06-03 2001-06-18 日本電気株式会社 絶縁膜の形成方法
US5869149A (en) * 1997-06-30 1999-02-09 Lam Research Corporation Method for preparing nitrogen surface treated fluorine doped silicon dioxide films
US6440550B1 (en) 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6717181B2 (en) 2001-02-22 2004-04-06 Semiconductor Energy Laboratory Co., Ltd. Luminescent device having thin film transistor
US6780499B2 (en) * 2001-05-03 2004-08-24 International Business Machines Corporation Ordered two-phase dielectric film, and semiconductor device containing the same
US6716770B2 (en) * 2001-05-23 2004-04-06 Air Products And Chemicals, Inc. Low dielectric constant material and method of processing by CVD
US7074489B2 (en) 2001-05-23 2006-07-11 Air Products And Chemicals, Inc. Low dielectric constant material and method of processing by CVD
EP1271643A1 (en) 2001-06-22 2003-01-02 Infineon Technologies AG A method of forming a bitline and a bitline contact and a dynamic memory cell
CN102668096B (zh) 2009-10-30 2015-04-29 株式会社半导体能源研究所 半导体装置及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2699695B2 (ja) * 1991-06-07 1998-01-19 日本電気株式会社 化学気相成長法
EP0562625B1 (en) * 1992-03-27 1997-06-04 Matsushita Electric Industrial Co., Ltd. A semiconductor device and process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113892153A (zh) * 2019-07-09 2022-01-04 株式会社村田制作所 薄膜电容器以及薄膜电容器用薄膜
CN114394597A (zh) * 2022-01-24 2022-04-26 贵州理工学院 一种利用四氟化硅为原料制备硅薄膜的方法

Also Published As

Publication number Publication date
EP0730298A3 (en) 1998-04-15
SG44710A1 (en) 1997-12-19
EP0730298A2 (en) 1996-09-04
TW302525B (cg-RX-API-DMAC10.html) 1997-04-11
KR960032507A (ko) 1996-09-17

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