CN113923866A - Machining method for improving blockage of PTFE circuit board through hole - Google Patents
Machining method for improving blockage of PTFE circuit board through hole Download PDFInfo
- Publication number
- CN113923866A CN113923866A CN202110992833.0A CN202110992833A CN113923866A CN 113923866 A CN113923866 A CN 113923866A CN 202110992833 A CN202110992833 A CN 202110992833A CN 113923866 A CN113923866 A CN 113923866A
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- copper
- hole
- double
- ptfe
- circuit board
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Links
- 229920001343 polytetrafluoroethylene Polymers 0.000 title claims abstract description 57
- 239000004810 polytetrafluoroethylene Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims description 9
- 238000003754 machining Methods 0.000 title claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052802 copper Inorganic materials 0.000 claims abstract description 60
- 239000010949 copper Substances 0.000 claims abstract description 60
- 238000005553 drilling Methods 0.000 claims abstract description 40
- 230000008021 deposition Effects 0.000 claims abstract description 39
- 238000003672 processing method Methods 0.000 claims abstract description 20
- 238000005520 cutting process Methods 0.000 claims abstract description 11
- 238000007599 discharging Methods 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 6
- 238000001556 precipitation Methods 0.000 claims description 4
- 239000004744 fabric Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 34
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- -1 polytetrafluoroethylene Polymers 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 3
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 206010028980 Neoplasm Diseases 0.000 description 1
- 241001074085 Scophthalmus aquosus Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0047—Drilling of holes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
The invention discloses a processing method for improving the blockage of a through hole of a PTFE (polytetrafluoroethylene) circuit board, belonging to the technical field of PTFE circuit board manufacturing, and the processing method for improving the blockage of the through hole of the PTFE circuit board comprises the following steps: cutting the double-sided copper-clad plate, wherein the middle layer of the double-sided copper-clad plate is a PTFE plate layer; selecting a first drill, and drilling the double-sided copper-clad plate for the first time to obtain a via hole; firstly, carrying out plasma degumming on the double-sided copper-clad plate by using a plasma degumming machine, and then carrying out primary copper deposition on the double-sided copper-clad plate to enable a copper layer to be attached to the hole wall of the via hole; selecting a second drill bit with the diameter being 0.05mm smaller than that of the first drill bit, performing secondary drilling on the via hole, and discharging the copper nodules generated by the first copper deposition; firstly, plasma degumming is carried out on the double-sided copper-clad plate by using a plasma degumming machine, and then secondary copper deposition is carried out on the double-sided copper-clad plate. The burr that downthehole production fully stretches when making first drilling through the first copper deposition, and the burr that rethread secondary drilling will stretch out cuts off the discharge, avoids the jam of PTFE circuit board conducting hole.
Description
Technical Field
The invention relates to the technical field of PTFE circuit board manufacturing, in particular to a processing method for improving blockage of a through hole of a PTFE circuit board.
Background
With the continuous development of communication technology, the signal transmission rate is faster and faster, and the dielectric constant of the substrate material is required to be small and the dielectric loss is required to be low for the PCBs such as radars and antennas, so that more and more PCBs are manufactured by selecting PTFE as a raw material.
In the PTFE circuit board production process, because PTFE is thermoplastic material, the surplus glue of brill dirt and remaining PTFE appears easily in the in-process hole inner wall of drilling, PTFE's chemical stability is very high simultaneously, and the effect of removing glue of conventional chemistry degumming method to PTFE circuit board conducting hole is very little, and the surplus glue of PTFE of conducting hole department can form the hole copper tumour after the heavy copper and block up the conducting hole.
Disclosure of Invention
The invention aims to solve at least one technical problem in the prior art, and therefore the invention provides a processing method for improving the via hole blockage of a PTFE circuit board, which can avoid the via hole blockage caused by residual PTFE glue.
The processing method for improving the blockage of the through hole of the PTFE circuit board comprises the following steps:
cutting: cutting the double-sided copper-clad plate, wherein the middle layer of the double-sided copper-clad plate is a PTFE plate layer;
drilling for the first time: selecting a first drill, and drilling the double-sided copper-clad plate for the first time to obtain a via hole;
copper deposition for the first time: firstly, carrying out plasma degumming on the double-sided copper-clad plate by using a plasma degumming machine, and then carrying out primary copper deposition on the double-sided copper-clad plate to enable a copper layer to be attached to the hole wall of the via hole;
and (3) drilling for the second time: selecting a second drill bit with the diameter being 0.05mm smaller than that of the first drill bit, performing secondary drilling on the via hole, and discharging the copper nodules generated by the first copper deposition;
and (3) copper precipitation for the second time: firstly, plasma degumming is carried out on the double-sided copper-clad plate by using a plasma degumming machine, and then secondary copper deposition is carried out on the double-sided copper-clad plate.
The processing method for improving the blockage of the through hole of the PTFE circuit board, provided by the embodiment of the invention, has at least the following beneficial effects: the burrs generated in the first drilling hole are fully expanded through the first copper deposition, and the expanded burrs are cut off and discharged through the second drilling hole, so that the blockage of the through hole of the PTFE circuit board is avoided.
According to some embodiments of the invention, the first copper deposition has a copper deposition thickness of 3 to 5 μm.
According to some embodiments of the invention, the second copper deposition has a copper deposition thickness of 25 to 30 μm.
According to some embodiments of the invention, the components of the PTFE sheet layer include PTFE and glass cloth.
According to some embodiments of the invention, the drilling speed of the first drilling is 80-100 kr/min.
According to some embodiments of the invention, the drilling speed of the second drilling is 90-110 kr/min.
According to some embodiments of the invention, the temperature of the plasma degumming is controlled to be 85-95 ℃.
According to some embodiments of the invention, plasma degumming comprises:
and (3) heating: setting parameters of plasma equipment to ensure that the oxygen flow is 1000-1500 cc/min and the nitrogen flow is 300-400 cc/min;
removing glue: setting parameters of plasma equipment, so that the flow rate of oxygen is 1000-2000 cc/min, the flow rate of nitrogen is 200-250 cc/min, and the flow rate of carbon tetrafluoride gas is 180-220 cc/min;
ash removal: setting parameters of plasma equipment to enable the oxygen flow to be 1000-1500 cc/min.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The invention is further described below with reference to the accompanying drawings and examples;
fig. 1 is a flowchart of a processing method for improving via plugging of a PTFE circuit board according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to the present preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, the meaning of a plurality of means is one or more, the meaning of a plurality of means is two or more, and larger, smaller, larger, etc. are understood as excluding the number, and larger, smaller, inner, etc. are understood as including the number. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless otherwise explicitly limited, terms such as arrangement, installation, connection and the like should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.
The processing method for improving the through hole blockage of the PTFE circuit board according to the embodiment of the invention is described with reference to FIG. 1.
As shown in fig. 1, a processing method for improving via plugging of a PTFE circuit board according to an embodiment of the present invention includes: cutting the double-sided copper-clad plate, wherein the middle layer of the double-sided copper-clad plate is a PTFE plate layer; selecting a first drill, and drilling the double-sided copper-clad plate for the first time to obtain a via hole; firstly, carrying out plasma degumming on the double-sided copper-clad plate by using a plasma degumming machine, and then carrying out primary copper deposition on the double-sided copper-clad plate to enable a copper layer to be attached to the hole wall of the via hole; selecting a second drill bit with the diameter being 0.05mm smaller than that of the first drill bit, performing secondary drilling on the via hole, and discharging the copper nodules generated by the first copper deposition; firstly, plasma degumming is carried out on the double-sided copper-clad plate by using a plasma degumming machine, and then secondary copper deposition is carried out on the double-sided copper-clad plate.
Specifically, the PTFE plate layer consists of glass cloth and a PTFE material, the double-sided copper-clad plate is made by covering copper foils on the two sides of the PTFE plate layer and performing hot pressing, firstly, the double-sided copper-clad plate is cut, dry films are pasted on the copper surfaces on the two sides, and a required pattern is etched through exposure and development to obtain a circuit board; selecting a first drill cutter to drill a circuit board for the first time, wherein the rotating speed of the first drill cutter is controlled to be 80-100 kr/min, and a large amount of heat is generated when the drill cutter cuts the PTFE plate layer, so that the PTFE material is heated to form molten adhesive and adheres to the inner wall of the through hole to form burrs; carrying out plasma degumming on the double-sided copper-clad plate by using a plasma degumming machine; carrying out copper deposition on the circuit board, wherein the copper deposition thickness is 3-5 mu m, and fully stretching burrs in the hole by depositing thin copper to form a copper bump; selecting a second drill cutter, wherein the diameter of the second drill cutter is 0.05mm smaller than that of the first drill cutter, drilling the via hole again by using the second drill cutter, controlling the rotating speed of the second drill cutter to be 90-100 kr/min, and cutting off and discharging burrs stretched out from the first copper deposition by secondary drilling; carrying out plasma degumming on the double-sided copper-clad plate by using a plasma degumming machine; and carrying out secondary copper deposition on the circuit board, wherein the copper deposition thickness is 25-30 mu m. Therefore, the processing method for improving the blockage of the through hole of the PTFE circuit board can avoid the problem that the through hole wall is burred and blocked, and improves the stability of signal transmission of the PTFE circuit board.
The processing method for improving the blockage of the through hole of the PTFE circuit board is also suitable for the drilling process of the multilayer PTFE circuit board, and when the multilayer PTFE circuit board is manufactured and the through hole needs to be processed, the through hole can be processed through the steps, so that the blockage of the through hole is avoided.
The following describes a processing method for improving the via plugging of a PTFE circuit board according to an embodiment of the present invention.
Example 1
The invention discloses a processing method for improving blockage of a through hole of a PTFE circuit board, which comprises the following steps:
cutting: and cutting the double-sided copper-clad plate, wherein the middle layer of the double-sided copper-clad plate is a PTFE plate layer.
Drilling for the first time: and selecting a first drill with the diameter of 0.25mm, and drilling the double-sided copper-clad plate for the first time at the drilling speed of 80kr/min to obtain the via hole.
Copper deposition for the first time: firstly, carrying out plasma degumming on the double-sided copper-clad plate by using a plasma degumming machine, controlling the temperature of the plasma degumming at 90 ℃, setting parameters of plasma equipment, and enabling the flow of oxygen to be 1500cc/min and the flow of nitrogen to be 400cc/min to finish heating; setting parameters of plasma equipment, and enabling the oxygen flow to be 2000cc/min, the nitrogen flow to be 250cc/min and the carbon tetrafluoride gas flow to be 220cc/min, so as to finish degumming; setting parameters of plasma equipment to enable the oxygen flow to be 1500cc/min, and finishing ash removal. And then carrying out primary copper deposition on the double-sided copper-clad plate, wherein the copper deposition thickness is 3 mu m, so that the copper layer is attached to the hole wall of the via hole.
And (3) drilling for the second time: selecting a second drill with the drill diameter of 0.20mm, drilling the via hole for the second time at the drilling speed of 90kr/min, and discharging the copper nodules generated by the first copper deposition;
and (3) copper precipitation for the second time: firstly, carrying out plasma degumming on the double-sided copper-clad plate by using a plasma degumming machine, controlling the temperature of the plasma degumming at 90 ℃, setting parameters of plasma equipment, and enabling the flow of oxygen to be 1500cc/min and the flow of nitrogen to be 400cc/min to finish heating; setting parameters of plasma equipment, and enabling the oxygen flow to be 2000cc/min, the nitrogen flow to be 250cc/min and the carbon tetrafluoride gas flow to be 220cc/min, so as to finish degumming; setting parameters of plasma equipment to enable the oxygen flow to be 1500cc/min, and finishing ash removal. And performing secondary copper deposition on the double-sided copper-clad plate, wherein the copper deposition thickness is 25 mu m.
The through hole of the PTFE circuit board is prepared by the method, no nodules are formed in the through hole, and the through hole is prevented from being blocked.
Example 2
The invention discloses a processing method for improving blockage of a through hole of a PTFE circuit board, which comprises the following steps:
cutting: and cutting the double-sided copper-clad plate, wherein the middle layer of the double-sided copper-clad plate is a PTFE plate layer.
Drilling for the first time: and selecting a first drill with the diameter of 0.35mm, and drilling the double-sided copper-clad plate for the first time at the drilling speed of 100kr/min to obtain the via hole.
Copper deposition for the first time: firstly, carrying out plasma degumming on the double-sided copper-clad plate by using a plasma degumming machine, controlling the temperature of the plasma degumming at 95 ℃, setting parameters of plasma equipment, and enabling the oxygen flow to be 1000cc/min and the nitrogen flow to be 300cc/min to finish heating; setting parameters of plasma equipment, and enabling the oxygen flow to be 1000cc/min, the nitrogen flow to be 200cc/min and the carbon tetrafluoride gas flow to be 180cc/min to finish degumming; setting parameters of plasma equipment to enable the oxygen flow to be 1000cc/min, and finishing ash removal. And then carrying out primary copper deposition on the double-sided copper-clad plate, wherein the copper deposition thickness is 5 mu m, so that the copper layer is attached to the hole wall of the via hole.
And (3) drilling for the second time: selecting a second drill with the drill diameter of 0.30mm, drilling the via hole for the second time at the drilling speed of 110kr/min, and discharging the copper nodules generated by the first copper deposition;
and (3) copper precipitation for the second time: firstly, carrying out plasma degumming on the double-sided copper-clad plate by using a plasma degumming machine, controlling the temperature of the plasma degumming at 95 ℃, setting parameters of plasma equipment, and enabling the oxygen flow to be 1000cc/min and the nitrogen flow to be 300cc/min to finish heating; setting parameters of plasma equipment, and enabling the oxygen flow to be 1000cc/min, the nitrogen flow to be 200cc/min and the carbon tetrafluoride gas flow to be 180cc/min to finish degumming; setting parameters of plasma equipment to enable the oxygen flow to be 1000cc/min, and finishing ash removal. And performing secondary copper deposition on the double-sided copper-clad plate, wherein the copper deposition thickness is 30 mu m.
The through hole of the multilayer PTFE circuit is manufactured by the method, no nodules are formed in the through hole, and the through hole is prevented from being blocked.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention.
Claims (8)
1. A processing method for improving the blockage of a through hole of a PTFE circuit board is characterized by comprising the following steps:
cutting: cutting a double-sided copper-clad plate, wherein the middle layer of the double-sided copper-clad plate is a PTFE plate layer;
drilling for the first time: selecting a first drill, and drilling the double-sided copper-clad plate for the first time to obtain a via hole;
copper deposition for the first time: firstly, carrying out plasma degumming on the double-sided copper-clad plate by using a plasma degumming machine, and then carrying out primary copper deposition on the double-sided copper-clad plate to enable a copper layer to be attached to the hole wall of the via hole;
and (3) drilling for the second time: selecting a second drill bit with the diameter being 0.05mm smaller than that of the first drill bit, performing second drilling on the via hole, and discharging the copper nodules generated by the first copper deposition;
and (3) copper precipitation for the second time: firstly, plasma degumming is carried out on the double-sided copper-clad plate by using a plasma degumming machine, and then secondary copper deposition is carried out on the double-sided copper-clad plate.
2. The processing method for improving the blockage of the through hole of the PTFE circuit board as recited in claim 1, wherein the thickness of the first copper deposition is 3-5 μm.
3. The processing method for improving the blockage of the through hole of the PTFE circuit board as recited in claim 1, wherein the thickness of the second copper deposition is 25-30 μm.
4. The processing method for improving the through hole plugging of the PTFE circuit board as claimed in claim 1, wherein the components of the PTFE sheet layer comprise PTFE and glass cloth.
5. The machining method for improving the blockage of the through hole of the PTFE circuit board as recited in claim 1, wherein the drilling speed of the first drilling is 80-100 kr/min.
6. The machining method for improving the blockage of the through hole of the PTFE circuit board as recited in claim 1, wherein the drilling speed of the second drilling is 90-110 kr/min.
7. The processing method for improving the blockage of the through hole of the PTFE circuit board as recited in claim 1, wherein the plasma degumming temperature is controlled to be 85-95 ℃.
8. The processing method for improving the blockage of the through hole of the PTFE circuit board as recited in claim 1, wherein the plasma degumming comprises the following steps:
and (3) heating: setting parameters of the plasma equipment to ensure that the oxygen flow is 1000-1500 cc/min and the nitrogen flow is 300-400 cc/min;
removing glue: setting parameters of the plasma equipment, wherein the flow rate of oxygen is 1000-2000 cc/min, the flow rate of nitrogen is 200-250 cc/min, and the flow rate of carbon tetrafluoride gas is 180-220 cc/min;
ash removal: and setting parameters of the plasma equipment to enable the oxygen flow to be 1000-1500 cc/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110992833.0A CN113923866A (en) | 2021-08-27 | 2021-08-27 | Machining method for improving blockage of PTFE circuit board through hole |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110992833.0A CN113923866A (en) | 2021-08-27 | 2021-08-27 | Machining method for improving blockage of PTFE circuit board through hole |
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| CN113923866A true CN113923866A (en) | 2022-01-11 |
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| CN202110992833.0A Pending CN113923866A (en) | 2021-08-27 | 2021-08-27 | Machining method for improving blockage of PTFE circuit board through hole |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11340604A (en) * | 1998-05-22 | 1999-12-10 | Sumitomo Heavy Ind Ltd | Desmear method of via hole of electronic circuit board and device |
| CN105101678A (en) * | 2014-05-22 | 2015-11-25 | 深南电路有限公司 | Circuit board conducting hole processing method and circuit board |
| CN108541139A (en) * | 2018-03-31 | 2018-09-14 | 深圳市实锐泰科技有限公司 | A kind of PCB via holes production method and PCB |
-
2021
- 2021-08-27 CN CN202110992833.0A patent/CN113923866A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11340604A (en) * | 1998-05-22 | 1999-12-10 | Sumitomo Heavy Ind Ltd | Desmear method of via hole of electronic circuit board and device |
| CN105101678A (en) * | 2014-05-22 | 2015-11-25 | 深南电路有限公司 | Circuit board conducting hole processing method and circuit board |
| CN108541139A (en) * | 2018-03-31 | 2018-09-14 | 深圳市实锐泰科技有限公司 | A kind of PCB via holes production method and PCB |
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Application publication date: 20220111 |