CN113804726A - Manufacturing method of vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement - Google Patents
Manufacturing method of vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement Download PDFInfo
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- CN113804726A CN113804726A CN202110918191.XA CN202110918191A CN113804726A CN 113804726 A CN113804726 A CN 113804726A CN 202110918191 A CN202110918191 A CN 202110918191A CN 113804726 A CN113804726 A CN 113804726A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/56—Investigating or analyzing materials by the use of thermal means by investigating moisture content
- G01N25/66—Investigating or analyzing materials by the use of thermal means by investigating moisture content by investigating dew-point
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H17/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves, not provided for in the preceding groups
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- G—PHYSICS
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- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
- G01K7/186—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer using microstructures
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Abstract
A vibration-temperature measurement compound type resonance humidity sensing chip for dew point measurement is used for realizing the identification of dew points and the measurement of the surface temperature of a quartz wafer, a platinum resistor on the chip is deposited on a non-electrode area of the quartz wafer in an MEMS (micro electro mechanical system) structure, the high-precision measurement of the temperature can be realized on the premise of ensuring the high-efficiency oscillation of the quartz wafer, and a core vibration-temperature measurement compound type resonance humidity sensing chip is provided for a resonance type dew point sensor (instrument); the invention can realize accurate measurement of the surface temperature of the quartz wafer while ensuring the identification of the resonance characteristic or the electrical characteristic of the quartz wafer to the dew point, and because the platinum resistor is deposited on the non-electrode area of the quartz wafer through the MEMS process, the temperature gradient distribution problem caused by the rigid contact mode of the platinum resistor and the quartz wafer is avoided, and the high-precision measurement of the dew point temperature can be realized.
Description
The technical field is as follows:
the invention relates to a manufacturing method of a vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement, and belongs to the technical field of sensors.
Background art:
there are many physical and meteorological representations of atmospheric humidity, each with its own physical quantity and corresponding units. Among the methods of expressing atmospheric humidity, the relative humidity, the absolute humidity, the dew point temperature, and the like are used conventionally. Among them, the measurement of dew point temperature is internationally recognized as the most precise humidity measurement method, and the actual humidity value transmission of all countries in the world is realized by the dew point temperature. The dew point temperature is a temperature at which air is cooled to saturation under the condition that neither the water vapor content nor the air pressure is changed, and is in a form of expression, a temperature at which water vapor in the air turns into dew. The water vapor content of the air can be known through the dew point, which is an indicator of absolute humidity. The key technology for dew point measurement is dew point identification. At present, the main high-precision dew point identification technology comprises a condensation photoelectric method and a crystal oscillation method.
The quartz resonance dew point measuring method mainly combines a quartz wafer with a semiconductor refrigerator, generates condensation on the surface of an electrode of the quartz wafer by utilizing active temperature control, and identifies and measures the dew point through the quality-frequency sensitive characteristic or the resonant circuit characteristic of the quartz wafer. The method has simple structure, and the measurement precision can reach and exceed that of the traditional condensation photoelectric method. The resonance type dew point measuring method (patent No. ZL201110412886.7) that has been proposed so far describes that condensation is generated on the surface of a quartz wafer electrode by using active temperature control, the dew point is identified by the mass-frequency effect of the quartz wafer and the temperature of the non-electrode area of the quartz wafer surface is measured by a platinum resistor at the same time as the dew point temperature; a sensitive circuit type dew point measuring method (patent No. ZL201110412385.9) is also proposed, which describes that condensation is generated on the surface of a quartz wafer electrode by active temperature control, the dew point is identified by the output characteristics of a driving circuit of the quartz wafer, and the temperature of a non-electrode area on the surface of the quartz wafer is measured by a platinum resistor as the dew point temperature.
In the two dew point measuring methods proposed in the above examples, the quartz wafer and the platinum resistor are involved and respectively used as a sensitive device and a temperature measuring unit, and the platinum resistor is used for measuring the surface temperature of the quartz wafer in a rigid contact attachment manner, which not only prevents the platinum resistor from being highly attached to the quartz wafer, but also affects the vibration performance of the quartz wafer due to the rigid contact of the platinum resistor with the quartz wafer, and if the final dew point temperature is measured with high precision, the temperature measuring manner is not satisfactory. Therefore, an integrated composite resonance humidity sensing chip with good vibration and temperature measurement functions becomes a problem to be solved urgently in the dew point measuring sensor (instrument).
The invention content is as follows:
the invention aims to provide a manufacturing method of a vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement, which is used for realizing dew point identification and measurement of the surface temperature of a quartz wafer. A core vibration-temperature measurement composite resonance humidity sensing chip is provided for a resonance dew point sensor (instrument).
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention discloses a method for manufacturing a vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement, which is shown in figure 1. The method comprises the following specific steps:
the method comprises the following steps: on the round quartz crystal wafer with thickness shear, the central areas of the upper and lower surfaces are respectively plated with round silver or gold electrodes by using an evaporation process, and the electrode on each surface is plated with an electrode epitaxial area for leading wires. The external driving circuit makes the quartz wafer generate resonance by the piezoelectric effect of the quartz wafer through contact with the electrode epitaxial region.
Step two: the platinum resistor is deposited on a non-electrode area of a quartz wafer through an MEMS (micro electro mechanical system) process, two ends of the platinum resistor are respectively deposited with a lead plate for connecting an external temperature measuring circuit, and the surface of the platinum resistor is coated with a layer of insulating material to avoid the short circuit between the platinum resistor and the quartz electrode area caused by surface moisture condensation when the dew point is measured.
The invention has the advantages and effects that:
the invention provides a method for manufacturing a vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement, which can be used as a composite resonance humidity sensing chip with vibration and temperature measurement functions in a resonance dew point measurement method (patent number: ZL201110412886.7) and a sensitive circuit dew point measurement method (patent number: ZL 201110412385.9). The invention can provide an integrated, convenient and fast replaceable core humidity sensing chip for industrialization of the resonant dew point measuring instrument.
Drawings
FIG. 1 is a schematic structural diagram of a vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement;
FIG. 2 is a design scheme of a vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement.
Detailed Description
The present invention will be described in further detail with reference to specific examples. The following examples are merely illustrative of the present invention and should not be construed as limiting thereof.
Example (b):
referring to fig. 2, the invention discloses a method for manufacturing a vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement. The method comprises the following specific steps:
the method comprises the following steps: selecting a circular quartz wafer with the diameter of 8.6mm and the thickness of 0.416mm and the thickness shear; respectively evaporating silver electrodes with the diameter of 5.2mm and the thickness of 200nm on two sides by taking the circle center of the quartz wafer as the circle center, so that the resonance frequency is 4 MHz; and respectively evaporating a silver layer with the length of 1.7mm, the width of 2mm and the thickness of 200nm as an electrode epitaxial region of an electrode lead on the right side non-electrode region of the upper surface and the left side non-electrode region of the lower surface of the quartz wafer.
Step two: the design of the platinum resistor takes the resistance strain effect of platinum metal as the working principle, the corresponding relation between the resistance value of the platinum resistor and the size thereof is shown as the formula 1,
in the formula (1), R is the resistance value of the platinum resistor, rho is the resistivity of the platinum resistor, l is the length of the platinum resistor, and S is the sectional area of the platinum resistor.
Since the resistivity of the platinum resistor changes with the change of temperature, the temperature value of the platinum resistor needs to be determined firstly when the platinum resistor is subjected to size design. The platinum resistor was designated as PT100 platinum resistor, which had a resistance value of 100. omega. at 0 ℃ and a resistivity of 9.8X 10-8Ω·m。
The temperature coefficient of the platinum resistor is one of the key parameters for measuring the performance of the platinum resistor, and the thickness of the platinum resistor is one of the key factors for influencing the temperature coefficient of the platinum resistor, so the thickness of the platinum resistor is firstly researched when the platinum resistor parameter is designed. The functional relationship between the temperature coefficient of resistance of platinum and the thickness thereof is shown in formula (2),
in the formula (2) < alpha >, (B)fThe temperature coefficient (ppm/DEG C) of the material in a thin film state; alpha is alpha0The temperature coefficient (ppm/DEG C) of the material in a bulk state; λ is the electron mean free path (μm); d is the thickness (μm) of the platinum resistor.
Theoretically, when d > 10 λ, the surface scattering of the platinum resistor surface has no effect on its resistivity, but experimental results show that the temperature coefficient in the thin film state after d > 90 λ is independent of its thickness d. The electron mean free path of platinum at room temperature is 10nm, so the thickness of the platinum resistor must be strictly controlled to be more than 0.9 μm to ensure the consistency of the surface temperature coefficient of the platinum resistor. The thickness of the platinum resistor was defined as 2 μm when designing the platinum resistor to eliminate the influence of the thickness variation of the platinum resistor on the temperature coefficient. When the thickness of the platinum resistor is 2 μm, the length of the platinum resistor is defined as 1cm, and the width of the platinum resistor is 4.9 μm according to the formula (1). Thus, the resulting platinum resistor design dimensions are: the thickness was 2 μm, the length was 1cm and the width was 4.9. mu.m.
The structure of the platinum resistor was preliminarily designed based on the size of the platinum resistor obtained as described above, and as shown in fig. 2, the platinum resistor was designed in the shape of a winding structure in which the height of the winding was 0.8mm and the interval between the windings was 0.2 mm. The spacing of the windings in the platinum resistor structure design shown in fig. 2 is much larger than the width of the windings, which can ensure reliable operation of the device in experiments.
After the structure and size design of the platinum resistor is finished, the platinum resistor is deposited and prepared on a non-electrode area of a quartz wafer by using an MESM process, lead plates with the length of 1mm, the width of 0.8mm and the thickness of 2 mu m are respectively deposited at two ends of the platinum resistor and used for connecting an external temperature measuring circuit, and finally, insulating materials such as liquid polyurethane and the like are coated on the platinum resistor structure after the preparation, so that the protection and insulation effects on the platinum resistor are achieved.
The foregoing is a more detailed description of the present invention that is presented in conjunction with specific embodiments, and the practice of the invention is not to be considered limited to those descriptions. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (2)
1. A manufacturing method of a vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement is characterized by comprising the following steps of:
the method comprises the following steps: on a round quartz wafer with the thickness shear, round silver or gold electrodes are respectively plated in the central areas of the upper surface and the lower surface by using an evaporation process, an electrode epitaxial area for leading wires is plated on the electrode on each surface, and an external driving circuit makes the quartz wafer generate resonance through the piezoelectric effect of the quartz wafer by contacting with the electrode epitaxial area;
step two: the platinum resistor is deposited on a non-electrode area of a quartz wafer through an MEMS (micro electro mechanical system) process, two ends of the platinum resistor are respectively deposited with a lead plate for connecting an external temperature measuring circuit, and the surface of the platinum resistor is coated with a layer of insulating material to avoid the short circuit between the platinum resistor and the quartz electrode area caused by surface moisture condensation when the dew point is measured.
2. The manufacturing method of the vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement as claimed in claim 1, wherein: the chip can ensure that the resonance characteristic or the electrical characteristic of the quartz wafer is utilized to identify the dew point, and simultaneously, the accurate measurement of the surface temperature of the quartz wafer is realized.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007225509A (en) * | 2006-02-24 | 2007-09-06 | Toppan Printing Co Ltd | Dew point recorder |
| CN102520015A (en) * | 2011-12-12 | 2012-06-27 | 北京航空航天大学 | Sensitive circuit type dew point measuring method |
| CN103592341A (en) * | 2013-11-12 | 2014-02-19 | 广州中国科学院先进技术研究所 | Contact type four-electrode salinity sensor based on MEMS (micro electro mechanical systems) technology and detection method of salinity sensor |
| CN103601147A (en) * | 2013-11-12 | 2014-02-26 | 广州中国科学院先进技术研究所 | Preparation method of contact type four-electrode salinity sensor based on micro electro mechanical systems (MEMS) technology |
| CN106770460A (en) * | 2016-12-20 | 2017-05-31 | 北京航空航天大学 | A kind of dew point sensor device based on double refrigeration sensitive faces |
| CN109211342A (en) * | 2018-09-05 | 2019-01-15 | 武汉四方光电科技有限公司 | A kind of air flow meter, the temperature sensitive chip of MEMS silicon substrate and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104132745B (en) * | 2014-08-15 | 2017-04-26 | 武汉工程大学 | Micro-nano scale platinum resistor temperature sensor capable of fast measuring temperature |
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- 2021-08-11 CN CN202110918191.XA patent/CN113804726B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007225509A (en) * | 2006-02-24 | 2007-09-06 | Toppan Printing Co Ltd | Dew point recorder |
| CN102520015A (en) * | 2011-12-12 | 2012-06-27 | 北京航空航天大学 | Sensitive circuit type dew point measuring method |
| CN103592341A (en) * | 2013-11-12 | 2014-02-19 | 广州中国科学院先进技术研究所 | Contact type four-electrode salinity sensor based on MEMS (micro electro mechanical systems) technology and detection method of salinity sensor |
| CN103601147A (en) * | 2013-11-12 | 2014-02-26 | 广州中国科学院先进技术研究所 | Preparation method of contact type four-electrode salinity sensor based on micro electro mechanical systems (MEMS) technology |
| CN106770460A (en) * | 2016-12-20 | 2017-05-31 | 北京航空航天大学 | A kind of dew point sensor device based on double refrigeration sensitive faces |
| CN109211342A (en) * | 2018-09-05 | 2019-01-15 | 武汉四方光电科技有限公司 | A kind of air flow meter, the temperature sensitive chip of MEMS silicon substrate and preparation method thereof |
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