CN113804726B - Manufacturing method of vibration-temperature-measuring composite resonant humidity-sensing chip for dew point measurement - Google Patents
Manufacturing method of vibration-temperature-measuring composite resonant humidity-sensing chip for dew point measurement Download PDFInfo
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Abstract
Description
技术领域：Technical field:
本发明涉及用于露点测量的振动-测温复合型谐振感湿芯片的制作方法，属于传感器技术领域。The invention relates to a manufacturing method of a vibration-temperature-measuring composite resonant humidity-sensing chip for dew point measurement, and belongs to the technical field of sensors.
背景技术：Background technique:
大气湿度在物理学和气象学中的表示方法有很多种，每种表示都有各自的物理量和与其相对应的单位。在众多大气湿度的表示方法中，习惯使用的是相对湿度、绝对湿度、露点温度等。其中，露点温度的测量已被国际公认为最精密的湿度测量方法，世界各国实际的湿度量值传递都是通过露点温度来实现的。露点温度是指空气在水汽含量和气压都不改变的条件下，冷却到饱和时的温度，形象地说，就是空气中的水蒸气变为露珠时候的温度。透过露点就可以知道空气中水汽含量，因而露点是一项绝对湿度的指标。露点测量其关键技术在于露点的识别。目前主要的高精度的露点识别技术有冷凝光电法以及晶体振荡法。There are many ways to express atmospheric humidity in physics and meteorology, and each expression has its own physical quantity and its corresponding unit. Among the many expressions of atmospheric humidity, relative humidity, absolute humidity, dew point temperature, etc. are commonly used. Among them, the measurement of dew point temperature has been internationally recognized as the most precise humidity measurement method, and the actual humidity value transmission in various countries in the world is realized through dew point temperature. The dew point temperature refers to the temperature when the air is cooled to saturation under the condition that the water vapor content and air pressure do not change. The water vapor content in the air can be known through the dew point, so the dew point is an indicator of absolute humidity. The key technology of dew point measurement lies in the identification of dew point. At present, the main high-precision dew point identification technologies include condensation photoelectric method and crystal oscillation method.
石英谐振式露点测量方法主要是将石英晶片与半导体制冷器相结合，利用主动控温在石英晶片电极表面产生凝露，通过石英晶片的质量-频率敏感特性或者谐振电路特性进行露点的识别和测量。这种方法结构简单，测量精度可以达到并超过传统的冷凝光电法。目前已经提出的谐振式露点测量方法(专利号：ZL201110412886.7)描述了利用利用主动控温在石英晶片电极表面产生凝露，通过石英晶片的质量-频率效应识别露点并同时通过铂电阻测得石英晶片表面非电极区温度作为露点温度；还提出了一种敏感电路式露点测量方法(专利号：ZL201110412385.9)描述了利用主动控温在石英晶片电极表面产生凝露，通过石英晶片的驱动电路的输出特征来识别露点并同时通过铂电阻测得石英晶片表面非电极区温度作为露点温度。The quartz resonant dew point measurement method is mainly to combine the quartz wafer with a semiconductor refrigerator, use active temperature control to generate condensation on the electrode surface of the quartz wafer, and identify and measure the dew point through the quality-frequency sensitivity characteristics of the quartz wafer or the characteristics of the resonant circuit . This method has a simple structure, and the measurement accuracy can reach and exceed the traditional condensation photoelectric method. The resonant dew point measurement method that has been proposed so far (patent number: ZL201110412886.7) describes the use of active temperature control to generate condensation on the surface of the quartz wafer electrode, and the dew point is identified by the mass-frequency effect of the quartz wafer and measured by a platinum resistance thermometer at the same time. The temperature of the non-electrode area on the surface of the quartz wafer is used as the dew point temperature; a sensitive circuit dew point measurement method is also proposed (patent number: ZL201110412385.9) which describes the use of active temperature control to generate condensation on the surface of the quartz wafer electrode, driven by the quartz wafer The output characteristics of the circuit are used to identify the dew point, and at the same time, the temperature of the non-electrode area on the surface of the quartz wafer is measured by the platinum resistance as the dew point temperature.
上述例子中所提出的两种露点测量方法中都涉及到了石英晶片和铂电阻，分别充当敏感器件和温度测量单元，并且铂电阻测量石英晶片表面温度的方式都是用刚性接触的相贴方式，这种方式不仅铂电阻与石英晶片无法高度贴合，同时铂电阻由于刚性接触石英晶片会对石英晶片的振动性能产生影响，如果想达到最终露点温度的高精度测量，这种测温的方式是满足不了要求的。因此，一种同时具有良好的振动和测温功能的一体式复合型谐振感湿芯片成为了该类露点测量传感器(仪器)中亟需解决的问题。The two dew point measurement methods proposed in the above examples both involve quartz wafers and platinum resistors, which act as sensitive devices and temperature measurement units respectively, and the way platinum resistors measure the surface temperature of quartz wafers is a rigid contact. In this way, the platinum resistance and the quartz wafer cannot be highly bonded, and the platinum resistance will have an impact on the vibration performance of the quartz wafer due to its rigid contact with the quartz wafer. If you want to achieve high-precision measurement of the final dew point temperature, this temperature measurement method is Can not meet the requirements. Therefore, an integrated composite resonant humidity-sensing chip with good vibration and temperature measurement functions has become an urgent problem to be solved in this type of dew point measurement sensor (instrument).
发明内容：Invention content:
本发明的目的是提供用于露点测量的振动-测温复合型谐振感湿芯片的制作方法，用来实现对露点识别和对石英晶片表面温度的测量，该芯片上的铂电阻是以MEMS(“微机电系统”)结构沉积在石英晶片非电极区，在保证石英晶片高效振荡的前提下，同时可以实现石英晶片表面温度的高精度测量。为谐振式露点传感器(仪器)提供了一种核心的振动-测温复合型谐振感湿芯片。The object of the present invention is to provide the manufacture method of the vibration-temperature measurement compound type resonant humidity sensing chip that is used for dew point measurement, is used for realizing dew point recognition and the measurement to quartz wafer surface temperature, and the platinum resistor on this chip is based on MEMS ( The "MEMS") structure is deposited on the non-electrode area of the quartz wafer, which can achieve high-precision measurement of the surface temperature of the quartz wafer under the premise of ensuring the efficient oscillation of the quartz wafer. A core vibration-temperature measurement compound resonant humidity sensing chip is provided for the resonant dew point sensor (instrument).
为实现上述的目的，本发明采用如下的技术方案：To achieve the above-mentioned purpose, the present invention adopts following technical scheme:
本发明用于露点测量的振动-测温复合型谐振感湿芯片的制作方法，如图1所示。具体步骤如下：The manufacturing method of the vibration-temperature-measuring composite resonant humidity-sensing chip used for dew point measurement in the present invention is shown in FIG. 1 . Specific steps are as follows:
步骤一：在厚度切变的圆形石英晶片上，利用蒸镀工艺在上下两个表面中心区分别镀有圆形的银或者金电极，每一面的电极都会镀有用来引线用的电极外延区。外部的驱动电路通过与电极外延区接触使得石英晶片通过自身的压电效应产生谐振。Step 1: On the circular quartz wafer with thickness shear, use the evaporation process to plate circular silver or gold electrodes on the center areas of the upper and lower surfaces respectively, and the electrodes on each side will be plated with an electrode epitaxial area for wiring . The external drive circuit makes the quartz wafer resonate through its own piezoelectric effect through contact with the electrode epitaxial region.
步骤二：将铂电阻通过MEMS工艺沉积在石英晶片的非电极区，铂电阻的两端分别沉积一块引线板用来连接外部测温电路，并在铂电阻表面涂敷一层绝缘材料避免由于测量露点时表面的水分凝露导致铂电阻与石英电极区短路。Step 2: Deposit the platinum resistance on the non-electrode area of the quartz wafer through the MEMS process, deposit a lead plate on both ends of the platinum resistance to connect to the external temperature measurement circuit, and coat a layer of insulating material on the surface of the platinum resistance to avoid the Moisture condensation on the surface at the dew point causes a short circuit between the platinum resistor and the quartz electrode area.
本发明优点及功效：Advantages and effects of the present invention:
本发明提出的用于露点测量的振动-测温复合型谐振感湿芯片的制作方法，在谐振式露点测量方法(专利号：ZL201110412886.7)和敏感电路式露点测量方法(专利号：ZL201110412385.9)中，可以作为一种同时具有振动和测温功能的复合型谐振感湿芯片被使用，本发明所提供的这种芯片功能是即可以保障利用石英晶片谐振特性或电特性对露点的识别，同时又可以实现对其表面温度的准确测量，由于铂电阻通过MEMS工艺沉积在石英晶片非电极区，避免了由于铂电阻与石英晶片的刚性接触方式所带来的影响振动特性以及温度梯度分布的问题，可以实现露点温度的高精度测量。该发明可以为谐振式露点测量仪器的产业化提供一种集成化，便捷化的可更换的核心感湿芯片。The manufacturing method of the vibration-temperature-measuring composite resonant humidity-sensing chip for dew point measurement proposed by the present invention is based on the resonant dew point measurement method (Patent No.: ZL201110412886.7) and the sensitive circuit dew point measurement method (Patent No.: ZL201110412385. In 9), it can be used as a composite resonant humidity-sensing chip with both vibration and temperature measurement functions. The function of this chip provided by the present invention is to ensure the identification of the dew point by using the resonant characteristics or electrical characteristics of the quartz wafer At the same time, accurate measurement of its surface temperature can be realized. Since the platinum resistance is deposited on the non-electrode area of the quartz wafer through the MEMS process, the vibration characteristics and temperature gradient distribution caused by the rigid contact method between the platinum resistance and the quartz wafer are avoided. problem, can achieve high-precision measurement of dew point temperature. The invention can provide an integrated, convenient and replaceable core humidity sensing chip for the industrialization of the resonant dew point measuring instrument.
附图说明Description of drawings
图1是用于露点测量的振动-测温复合型谐振感湿芯片结构示意图；Figure 1 is a schematic structural diagram of a vibration-temperature measurement composite resonant humidity-sensing chip for dew point measurement;
图2是用于露点测量的振动-测温复合型谐振感湿芯片设计方案。Figure 2 is the design scheme of the vibration-temperature measurement composite resonant humidity-sensing chip for dew point measurement.
具体实施方式Detailed ways
下面通过具体实施例对本发明作进一步详细说明。以下实施例仅对本发明进行进一步说明，不应理解为对本发明的限制。The present invention will be described in further detail below through specific examples. The following examples only further illustrate the present invention, and should not be construed as limiting the present invention.
实施例：Example:
见图2,本发明用于露点测量的振动-测温复合型谐振感湿芯片的制作方法。具体步骤如下：See Fig. 2, the manufacturing method of the vibration-temperature measuring composite resonant humidity-sensing chip used for dew point measurement in the present invention. Specific steps are as follows:
步骤一：选取直径为8.6mm、厚度为0.416mm的厚度切变的圆形石英晶片；以石英晶片的圆心为圆心分别在两面蒸镀直径为5.2mm、厚度为200nm的银电极，使得谐振频率为4MHz；分别在石英晶片上表面右侧非电极区和下表面左侧非电极区蒸镀一块长度为1.7mm、宽度为2mm、厚度为200nm的银层作为电极引线的电极外延区。Step 1: Select a circular quartz wafer with a diameter of 8.6mm and a thickness of 0.416mm; take the center of the quartz wafer as the center of the circle and vapor-deposit silver electrodes with a diameter of 5.2mm and a thickness of 200nm on both sides, so that the resonance frequency A silver layer with a length of 1.7mm, a width of 2mm, and a thickness of 200nm was deposited on the non-electrode area on the right side of the upper surface of the quartz wafer and the non-electrode area on the left side of the lower surface of the quartz wafer as the electrode epitaxial area of the electrode lead.
步骤二：铂电阻的设计以铂金属的电阻应变效应为其工作原理，铂电阻的阻值与其尺寸之间的对应关系如式1所示，Step 2: The design of platinum resistance is based on the resistance strain effect of platinum metal as its working principle. The corresponding relationship between the resistance value of platinum resistance and its size is shown in formula 1.
式(1)中R为铂电阻的阻值，ρ为铂电阻的电阻率，l为铂电阻的长度，S为铂电阻的截面积。In the formula (1), R is the resistance value of the platinum resistor, ρ is the resistivity of the platinum resistor, l is the length of the platinum resistor, and S is the cross-sectional area of the platinum resistor.
由于铂电阻的电阻率随温度的变化而变化，因此在进行铂电阻尺寸设计时需要首先确定铂电阻的温度值。设定铂电阻为PT100铂电阻，其在0℃时电阻值为100Ω，电阻率为9.8×10-8Ω·m。Since the resistivity of platinum resistance changes with temperature, it is necessary to first determine the temperature value of platinum resistance when designing the size of platinum resistance. The platinum resistor is set as a PT100 platinum resistor, its resistance value is 100Ω at 0°C, and its resistivity is 9.8×10 -8 Ω·m.
铂电阻的温度系数是衡量铂电阻性能好坏的关键参数之一，而铂电阻的厚度是影响铂电阻温度系数的关键因素之一，因此在进行铂电阻参数的设计时首先对铂电阻的厚度进行了研究。铂电阻温度系数与其厚度之间的函数关系如式(2)所示，The temperature coefficient of platinum resistance is one of the key parameters to measure the performance of platinum resistance, and the thickness of platinum resistance is one of the key factors affecting the temperature coefficient of platinum resistance. Therefore, when designing platinum resistance parameters, the thickness of platinum resistance is first Were studied. The functional relationship between the temperature coefficient of platinum resistance and its thickness is shown in formula (2),
式(2)中αf为材料薄膜状态下的温度系数(ppm/℃)；α0为材料体型状态下的温度系数(ppm/℃)；λ为电子平均自由程(μm)；d为铂电阻的厚度(μm)。In formula (2), α f is the temperature coefficient (ppm/°C) in the state of material film; α 0 is the temperature coefficient (ppm/°C) in the state of material shape; λ is the mean free path of electrons (μm); d is platinum The thickness of the resistor (μm).
理论上当d＞10λ时，铂电阻表面发生的表面散射对其电阻率没有影响，但是试验结果表明d＞90λ以后薄膜状态下的温度系数与其厚度d无关。室温下铂的电子平均自由程为10nm，因此必须严格控制铂电阻的厚度达到0.9μm以上才能保证铂电阻表面温度系数的一致性。在进行铂电阻设计时将铂电阻的厚度定义为2μm，以消除铂电阻厚度偏差对温度系数的影响。当铂电阻厚度为2μm时，定义铂电阻的长度为1cm，则由式(1)可以得出铂电阻的宽度为4.9μm。因此，得到的铂电阻设计尺寸为：厚度为2μm，长度为1cm，宽度为4.9μm。Theoretically, when d>10λ, the surface scattering on the surface of platinum resistance has no effect on its resistivity, but the test results show that after d>90λ, the temperature coefficient in the thin film state has nothing to do with its thickness d. The electron mean free path of platinum at room temperature is 10nm, so the thickness of the platinum resistor must be strictly controlled to be more than 0.9μm to ensure the consistency of the surface temperature coefficient of the platinum resistor. The thickness of the platinum resistance is defined as 2 μm in the design of the platinum resistance to eliminate the influence of the thickness deviation of the platinum resistance on the temperature coefficient. When the thickness of the platinum resistor is 2 μm, the length of the platinum resistor is defined as 1 cm, and the width of the platinum resistor can be obtained from formula (1) to be 4.9 μm. Therefore, the design dimensions of the obtained platinum resistor are: a thickness of 2 μm, a length of 1 cm, and a width of 4.9 μm.
基于上述得到的铂电阻的尺寸对铂电阻的结构进行了初步的设计，如图2所示，铂电阻的形状设计为绕线结构，其中绕线的高度为0.8mm，绕线之间的间距为0.2mm。图2所示的铂电阻结构设计中绕线的间距远大于绕线的宽度，在实验中可以保证元件的可靠工作。Based on the size of the platinum resistance obtained above, the structure of the platinum resistance is initially designed. As shown in Figure 2, the shape of the platinum resistance is designed as a winding structure, where the height of the winding is 0.8mm, and the spacing between the windings is 0.2mm. In the platinum resistor structure design shown in Figure 2, the spacing of the winding wires is much larger than the width of the winding wires, which can ensure the reliable operation of the components in the experiment.
在完成了铂电阻的结构及尺寸设计之后，利用MESM工艺将其沉积制备在石英晶片的非电极区，并在铂电阻的两端分别沉积一块长1mm、宽0.8mm、厚2μm的引线板用来连接外部测温电路，最后将液态的聚氨酯等绝缘材料涂敷在制备完成后的铂电阻结构上，以达到对铂电阻的保护和绝缘作用。After completing the structure and size design of the platinum resistor, use the MESM process to deposit it on the non-electrode area of the quartz wafer, and deposit a lead plate with a length of 1mm, a width of 0.8mm, and a thickness of 2μm on both ends of the platinum resistor. To connect the external temperature measuring circuit, and finally apply liquid polyurethane and other insulating materials on the prepared platinum resistor structure to achieve protection and insulation for the platinum resistor.
以上内容是结合具体的实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。The above content is a further detailed description of the present invention in conjunction with specific embodiments, and it cannot be assumed that the specific implementation of the present invention is limited to these descriptions. For those of ordinary skill in the technical field of the present invention, without departing from the concept of the present invention, some simple deduction or replacement can be made, which should be regarded as belonging to the protection scope of the present invention.
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