CN113804726B - Manufacturing method of vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement - Google Patents
Manufacturing method of vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement Download PDFInfo
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- CN113804726B CN113804726B CN202110918191.XA CN202110918191A CN113804726B CN 113804726 B CN113804726 B CN 113804726B CN 202110918191 A CN202110918191 A CN 202110918191A CN 113804726 B CN113804726 B CN 113804726B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/56—Investigating or analyzing materials by the use of thermal means by investigating moisture content
- G01N25/66—Investigating or analyzing materials by the use of thermal means by investigating moisture content by investigating dew-point
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
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- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
- G01K7/186—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer using microstructures
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Abstract
A method for manufacturing a vibration-temperature measurement composite type resonance humidity sensing chip for dew point measurement is used for realizing the identification of the dew point and the measurement of the surface temperature of a quartz wafer, and platinum resistance on the chip is deposited in a non-electrode area of the quartz wafer in a MEMS (micro electro mechanical system) structure, so that the high-precision measurement of the temperature can be realized on the premise of ensuring the high-efficiency oscillation of the quartz wafer, and a core vibration-temperature measurement composite type resonance humidity sensing chip is provided for a resonance dew point sensor (instrument); the invention can realize accurate measurement of the surface temperature of the quartz wafer while guaranteeing the identification of the resonance characteristic or the electric characteristic of the quartz wafer to the dew point, and can realize high-precision measurement of the dew point temperature because the platinum resistor is deposited on the non-electrode area of the quartz wafer through the MEMS technology, thereby avoiding the problem of temperature gradient distribution caused by the rigid contact mode of the platinum resistor and the quartz wafer.
Description
Technical field:
the invention relates to a manufacturing method of a vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement, belonging to the technical field of sensors.
The background technology is as follows:
there are various methods of expressing atmospheric humidity in physics and meteorology, each of which has a respective physical quantity and a unit corresponding thereto. Among the various methods of indicating atmospheric humidity, relative humidity, absolute humidity, dew point temperature, and the like are conventionally used. Among them, the measurement of dew point temperature is internationally known as the most accurate humidity measurement method, and the actual humidity value transmission in all countries around the world is realized through the dew point temperature. The dew point temperature refers to the temperature at which the air cools to saturation without changing the moisture content and the air pressure, and is, in the visual sense, the temperature at which the moisture in the air becomes dew. The water vapor content of the air can be known through the dew point, so the dew point is an index of absolute humidity. The key technology of dew point measurement is the identification of dew point. The main high-precision dew point identification technology at present is a condensation photoelectric method and a crystal oscillation method.
The quartz resonance dew point measuring method mainly combines a quartz wafer with a semiconductor refrigerator, utilizes active temperature control to generate dew on the surface of an electrode of the quartz wafer, and recognizes and measures the dew point through the mass-frequency sensitive characteristic or the resonance circuit characteristic of the quartz wafer. The method has simple structure, and the measurement accuracy can reach and exceed that of the traditional condensation photoelectric method. The resonant dew point measuring method (patent number: ZL 201110412886.7) which has been proposed so far describes that dew is generated on the surface of an electrode of a quartz wafer by utilizing active temperature control, the dew point is recognized by the mass-frequency effect of the quartz wafer and the temperature of a non-electrode area on the surface of the quartz wafer is measured as the dew point temperature by platinum resistance at the same time; a sensitive circuit dew point measuring method (patent No. ZL 201110412385.9) has also been proposed, which describes that dew is generated on the surface of an electrode of a quartz wafer by active temperature control, the dew point is identified by the output characteristics of a driving circuit of the quartz wafer, and the temperature of a non-electrode area on the surface of the quartz wafer is measured as the dew point temperature by platinum resistance.
In the two dew point measuring methods proposed in the above examples, the quartz wafer and the platinum resistor are involved, and serve as a sensing device and a temperature measuring unit, respectively, and the platinum resistor is used for measuring the surface temperature of the quartz wafer in a rigid contact manner, which is not only unable to be highly bonded with the quartz wafer, but also affects the vibration performance of the quartz wafer due to the rigid contact of the platinum resistor, and if the final dew point temperature is measured with high precision, the temperature measuring manner is not satisfied. Therefore, an integrated composite resonance humidity sensing chip with good vibration and temperature measurement functions is a problem to be solved in the dew point measurement sensor (instrument).
The invention comprises the following steps:
the invention aims to provide a manufacturing method of a vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement, which is used for realizing dew point identification and quartz wafer surface temperature measurement, wherein platinum resistance on the chip is deposited in a quartz wafer non-electrode area in a MEMS (micro electro mechanical system) structure, and high-precision measurement of the quartz wafer surface temperature can be realized on the premise of ensuring high-efficiency oscillation of the quartz wafer. Provides a core vibration-temperature measurement composite resonance humidity sensing chip for a resonance dew point sensor (instrument).
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the invention relates to a manufacturing method of a vibration-temperature measurement composite type resonance humidity sensing chip for dew point measurement, which is shown in figure 1. The method comprises the following specific steps:
step one: on the thickness-sheared circular quartz wafer, circular silver or gold electrodes are respectively plated on the central areas of the upper surface and the lower surface by utilizing an evaporation process, and the electrode on each surface is plated with an electrode epitaxial area for leading wires. The external driving circuit makes the quartz wafer resonate through the piezoelectric effect of the quartz wafer by contacting with the electrode epitaxial region.
Step two: and depositing a platinum resistor on a non-electrode area of the quartz wafer through an MEMS (micro electro mechanical system) process, respectively depositing a lead plate at two ends of the platinum resistor for connecting an external temperature measuring circuit, and coating a layer of insulating material on the surface of the platinum resistor to avoid short circuit between the platinum resistor and the quartz electrode area due to condensation of water on the surface when measuring a dew point.
The invention has the advantages and effects that:
the method for manufacturing the vibration-temperature measurement composite type resonance humidity sensing chip for dew point measurement can be used as a composite type resonance humidity sensing chip with vibration and temperature measurement functions in a resonance type dew point measurement method (patent number: ZL 201110412886.7) and a sensitive circuit type dew point measurement method (patent number: ZL 201110412385.9), the chip functions provided by the invention can ensure the identification of the dew point by utilizing the resonance characteristics or the electrical characteristics of a quartz wafer, and meanwhile, the accurate measurement of the surface temperature of the chip can be realized, and the problem that the vibration characteristics and the temperature gradient distribution are influenced due to the rigid contact mode of the platinum resistor and the quartz wafer is avoided because the platinum resistor is deposited in a non-electrode area of the quartz wafer through an MEMS (micro electro mechanical system) process, so that the high-precision measurement of the dew point temperature can be realized. The invention can provide an integrated, convenient and fast replaceable core humidity sensing chip for the industrialization of the resonance dew point measuring instrument.
Drawings
FIG. 1 is a schematic diagram of a vibration-temperature measurement composite resonant humidity sensing chip for dew point measurement;
fig. 2 is a vibration-temperature measurement composite resonant humidity sensing chip design for dew point measurement.
Detailed Description
The invention is further illustrated by the following examples. The following examples are merely illustrative of the present invention and should not be construed as limiting the invention.
Examples:
referring to fig. 2, the invention relates to a method for manufacturing a vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement. The method comprises the following specific steps:
step one: selecting a circular quartz wafer with a diameter of 8.6mm and a thickness shear of 0.416 mm; evaporating silver electrodes with the diameter of 5.2mm and the thickness of 200nm on two sides respectively by taking the circle center of a quartz wafer as the circle center, so that the resonance frequency is 4MHz; and respectively evaporating a silver layer with the length of 1.7mm, the width of 2mm and the thickness of 200nm on the right non-electrode area on the upper surface and the left non-electrode area on the lower surface of the quartz wafer to serve as an electrode epitaxial area of the electrode lead.
Step two: the design of the platinum resistor takes the resistance strain effect of platinum metal as the working principle, the corresponding relation between the resistance value of the platinum resistor and the size thereof is shown as the formula 1,
in the formula (1), R is the resistance value of the platinum resistor, ρ is the resistivity of the platinum resistor, l is the length of the platinum resistor, and S is the sectional area of the platinum resistor.
Due toThe resistivity of the platinum resistor changes with temperature, and therefore it is necessary to first determine the temperature value of the platinum resistor when sizing the platinum resistor. The platinum resistance was set to be PT100 platinum resistance, its resistance value was 100deg.C, and its resistivity was 9.8X10 -8 Ω·m。
The temperature coefficient of the platinum resistor is one of the key parameters for measuring the performance of the platinum resistor, and the thickness of the platinum resistor is one of the key factors for influencing the temperature coefficient of the platinum resistor, so that the thickness of the platinum resistor is studied first when the design of the platinum resistor parameters is carried out. The temperature coefficient of platinum resistance as a function of its thickness is shown in equation (2),
alpha in formula (2) f Temperature coefficient (ppm/. Degree. C.) in the state of a material film; alpha 0 Temperature coefficient (ppm/. Degree. C.) in the material body type state; lambda is the electron mean free path (μm); d is the thickness (μm) of the platinum resistor.
Theoretically, when d > 10λ, the surface scattering of the platinum resistance surface has no effect on its resistivity, but the test results show that the temperature coefficient in the thin film state after d > 90λ is independent of its thickness d. The electron mean free path of platinum at room temperature is 10nm, so that the thickness of platinum resistor must be strictly controlled to be more than 0.9 μm to ensure the consistency of the platinum resistor surface temperature coefficient. The thickness of the platinum resistor was defined as 2 μm in the platinum resistor design to eliminate the influence of the thickness deviation of the platinum resistor on the temperature coefficient. When the platinum resistance thickness is 2 μm, and the length of the platinum resistance is defined as 1cm, the width of the platinum resistance can be found to be 4.9 μm from the formula (1). Thus, the resulting platinum resistance design dimensions were: the thickness was 2 μm, the length was 1cm, and the width was 4.9. Mu.m.
The structure of the platinum resistor was primarily designed based on the size of the platinum resistor obtained as described above, and as shown in fig. 2, the shape of the platinum resistor was designed as a wire-wound structure in which the height of the wire was 0.8mm and the interval between the wires was 0.2mm. The spacing of the windings in the platinum resistor structure design shown in fig. 2 is much greater than the width of the windings, and reliable operation of the element can be ensured in experiments.
After the structure and the size design of the platinum resistor are completed, the platinum resistor is deposited and prepared in a non-electrode area of a quartz wafer by utilizing a MESM process, a piece of lead plates with the length of 1mm, the width of 0.8mm and the thickness of 2 mu m are respectively deposited at two ends of the platinum resistor and used for being connected with an external temperature measuring circuit, and finally insulating materials such as liquid polyurethane and the like are coated on the prepared platinum resistor structure so as to achieve the protection and insulation effects on the platinum resistor.
The foregoing is a further detailed description of the invention in connection with specific embodiments, and it is not intended that the invention be limited to such description. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (3)
1. A manufacturing method of a vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement is characterized by comprising the following steps of:
plating round silver or gold electrodes on the central areas of the upper surface and the lower surface of a round quartz wafer with shear thickness respectively by utilizing an evaporation process, wherein the electrodes on each surface are plated with an electrode epitaxial area for leading wires, and an external driving circuit is contacted with the electrode epitaxial area to enable the quartz wafer to resonate through the piezoelectric effect of the quartz wafer;
depositing a platinum resistor on a non-electrode area of a quartz wafer through an MEMS (micro electro mechanical system) process, respectively depositing a lead plate at two ends of the platinum resistor for connecting an external temperature measuring circuit, and coating a layer of insulating material on the surface of the platinum resistor to avoid short circuit between the platinum resistor and the quartz electrode area due to condensation of water on the surface when measuring a dew point;
the sizing process of the platinum resistor comprises the following steps:
the design of the platinum resistor takes the resistance strain effect of platinum metal as the working principle, and the corresponding relation between the resistance value of the platinum resistor and the size of the platinum resistor is as follows:
wherein R is the resistance of the platinum resistor, ρ is the resistivity of the platinum resistor, l is the length of the platinum resistor, and S is the sectional area of the platinum resistor;
determining a temperature value of the platinum resistor;
determining the thickness of the platinum resistor, and the function relation between the temperature coefficient of the platinum resistor and the thickness of the platinum resistor
Wherein alpha is f Is the temperature coefficient of the material film state; alpha 0 Is the temperature coefficient of the material in the body type state; lambda is the electron mean free path; d is the thickness of the platinum resistor.
2. The method for manufacturing the vibration-temperature measurement composite type resonance humidity sensing chip for dew point measurement according to claim 1, wherein the vibration-temperature measurement composite type resonance humidity sensing chip has a resonance electric signal output function and a temperature output function.
3. The method for manufacturing the vibration-temperature measurement composite type resonance humidity sensing chip for dew point measurement according to claim 1, wherein the vibration-temperature measurement composite type resonance humidity sensing chip has a dew point identification function and a dew point temperature measurement function.
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| CN104132745A (en) * | 2014-08-15 | 2014-11-05 | 武汉工程大学 | Micro-nano scale platinum resistor temperature sensor capable of fast measuring temperature |
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| JP2007225509A (en) * | 2006-02-24 | 2007-09-06 | Toppan Printing Co Ltd | Dew point recorder |
| CN102520015B (en) * | 2011-12-12 | 2013-07-31 | 北京航空航天大学 | Sensitive circuit type dew point measuring method |
| CN103601147A (en) * | 2013-11-12 | 2014-02-26 | 广州中国科学院先进技术研究所 | Preparation method of contact type four-electrode salinity sensor based on micro electro mechanical systems (MEMS) technology |
| CN103592341A (en) * | 2013-11-12 | 2014-02-19 | 广州中国科学院先进技术研究所 | Contact type four-electrode salinity sensor based on MEMS (micro electro mechanical systems) technology and detection method of salinity sensor |
| CN106770460B (en) * | 2016-12-20 | 2019-05-21 | 北京航空航天大学 | A kind of dew point sensor device based on double refrigeration sensitive faces |
| CN109211342B (en) * | 2018-09-05 | 2020-03-20 | 四方光电股份有限公司 | Airflow flowmeter, MEMS silicon-based temperature-sensitive chip and preparation method thereof |
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