CN104132745B - Micro-nano scale platinum resistor temperature sensor capable of fast measuring temperature - Google Patents
Micro-nano scale platinum resistor temperature sensor capable of fast measuring temperature Download PDFInfo
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- CN104132745B CN104132745B CN201410403064.6A CN201410403064A CN104132745B CN 104132745 B CN104132745 B CN 104132745B CN 201410403064 A CN201410403064 A CN 201410403064A CN 104132745 B CN104132745 B CN 104132745B
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- temperature
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- film resistor
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Abstract
The invention discloses a micro-nano scale platinum resistor temperature sensor capable of fast measuring the temperature. The micro-nano scale platinum resistor comprises a power source, an accurate resistor and a temperature sensing part. The temperature sensing part is fixed to a fixing part, the fixing part is a substrate slice with a middle hole, and the temperature sensing part comprises a plurality of temperature sensing platinum thin-film resistor blocks which are bent and connected through connecting pieces, the connecting pieces are partly fixed to the edge of the middle hole of the substrate slice, and the platinum thin-film resistor blocks and the connecting pieces are connected in series to form a ring shape to be hung into the middle hole. The head and the tail of the ring-shaped temperature sensing part form a circuit with the power source and the accurate resistor through a wire. According to the micro-nano scale platinum resistor temperature sensor, the fluid temperature can be measured rapidly along with the changes of the temperature of a platinum resistor in the temperature sensing part in the circuit.
Description
Technical field
The present invention relates to temperature sensor, more particularly to a kind of micro/nano level platinum resistance temperature sensor of quick temperature measurement.
Background technology
Temperature sensor is for measurement temperature and temperature sensor change makes it be converted into the instrument of output signal, extensively should
For departments such as industry, agricultural, business.
At present, it is one because response speed relatively can not in time react slowly the change of dut temperature in temperature sensor field
Big defect, main cause is that sensor internal temperature sensing medium temperature transfer speed is too slow, and particularly outside dut temperature is by sense
Warm medium be delivered to center sensor distance it is longer when.And traditional thermal resistance temperature sensor is due to temperature element and measured object
Body wants good thermo-contact, carries out conduction of heat and heat convection and reaches thermal balance, and show value when reaching thermal balance is quilt
Survey the temperature value of object.This thermometry precision is higher, it is possible to measure the Temperature Distribution of interior of articles.But for temperature change
Very fast place, existing temperature sensor cannot meet at aspects such as thermometric response time, precision.Therefore with micro- electricity
The development of sub- technology, automatic test technology, temperature survey more tends to miniaturization, automatization, rapid.
Thermistor Temperature Measurement is to change this characteristic based on the resistance value variation with temperature of metallic conductor to enter trip temperature
Measurement, therefore need to only measure the change in resistance of temperature-sensitive thermal resistance, so that it may know corresponding temperature value.Using more thermal resistance material
Including copper, platinum, nickel and dilval, because high purity platinum and its alloy have higher temperature-coefficient of electrical resistance, high temperature resistant, corrosion resistant
Erosion, the characteristic such as temperature-measuring range is big and the strength of materials is high, and it is widely used in field of temperature measurement.
What the temperature-sensing element of traditional platinum resistance temperature sensor was usually turned to thicker platinum filament, and temperature-sensing element
Skeleton or substrate frequently with ceramics, glass, Muscovitum etc., platinum filament is processed again with skeleton or substrate through complicated technique.
Because the volume of temperature sensing part and skeleton or substrate is all than larger, thus whole sensor has larger thermal capacity.This is caused
The time constant of traditional resistance temperature measurement sensor can not all reach very little, thus limit this kind of sensor and lead in quick temperature measurement
Application in domain.
The content of the invention
The goal of the invention of the present invention, is as temperature-sensitive unit using micro/nano level platinum (Pt) film resistor of hanging arrangement
Part, the temperature-sensing element small volume of the design, lightweight, thermal capacity is little, with minimum time constant, can realize quick temperature measurement.
The present invention is that the technical scheme adopted up to above-mentioned purpose is：
A kind of micro/nano level platinum resistance temperature sensor of quick temperature measurement, including power supply, precise resistances, and temperature-sensitive are provided
Part；
Temperature sensing part part is fixed in fixed component, and fixed component is the substrate slice of central aperture；
Temperature sensing part includes the thermometric platinum film resistor block of multiple bendings, is connected by connection sheet between platinum film resistor block
Connect, connection sheet part is fixed on the middle bore edges of substrate slice, multiple platinum film resistor blocks and connection sheet connect to form annular outstanding
In interstitial hole；The head and the tail of the temperature sensing part of annular constitute loop by wire with power supply, precise resistances.
In the micro/nano level platinum resistance temperature sensor of quick temperature measurement of the present invention, the platinum film resistor block of bending is
Broken line type.
In the micro/nano level platinum resistance temperature sensor of quick temperature measurement of the present invention, the platinum film resistor block of bending is
Sinusoidal waveform, square wave type or triangular waveform.
In the micro/nano level platinum resistance temperature sensor of quick temperature measurement of the present invention, connection sheet is and thermometric platinum film
The box-shaped platinum film block that resistance bolck is realized using same processing technique.
In the micro/nano level platinum resistance temperature sensor of quick temperature measurement of the present invention, connection sheet and platinum film resistor block
Thickness it is identical.
In the micro/nano level platinum resistance temperature sensor of quick temperature measurement of the present invention, connection sheet and platinum film resistor block
It is and micro-nano graph is formed in silicon chip surface using platinum sputtering and stripping technology.
In the micro/nano level platinum resistance temperature sensor of quick temperature measurement of the present invention, substrate slice can be silicon chip, glass
Piece or potsherd.
In the micro/nano level platinum resistance temperature sensor of quick temperature measurement of the present invention, the shape of interstitial hole can be round
Shape, square or other shapes, the interstitial hole can be through hole or non through hole.
The beneficial effect comprise that：The present invention adopts the other temperature sensing part of microscale-nanoscale, and by temperature sensing part
Annular is designed as, the resistance value for making the temperature-sensitive thin film resistance of series connection accounts for a larger share of total resistance value in loop, and connects
Sheet resistance values very little, it is hereby ensured that temperature sensing part can be timely responded in surveyed variation of ambient temperature, produce significantly electricity
Resistance signal intensity.Such that it is able to quickly measure fluid temperature (F.T.) according to the platinum resistance variation with temperature of temperature sensing part in loop.
The goal of the invention of the present invention, is as temperature-sensitive unit using micro/nano level platinum (Pt) film resistor of hanging arrangement
Part, the temperature-sensing element small volume of the design, lightweight, thermal capacity is little, with minimum time constant, can realize quick temperature measurement.
Description of the drawings
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing：
Fig. 1 is the sensor construction schematic diagram of the embodiment of the present invention；
Fig. 2 is the micro-nano-scale platinum resistance temperature sensing part structural representation of embodiment of the present invention hanging structure design；
Fig. 3 is embodiment of the present invention temperature sensing part and fixed component axonometric chart；
Fig. 4 is the round tube hole structure design schematic perspective view of embodiment of the present invention fixed component；
Fig. 5 is the geometry design diagram of temperature sensitive resister block and connection sheet in embodiment of the present invention temperature sensing part.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only to explain the present invention, not
For limiting the present invention.
The present invention was solved during such as car engine ignition moment or reciprocating compressor periodic movement, it is desirable to surveyed
The temperature survey problem in the place that warm response time is extremely short and alternating temperature is violent, there is provided it is a kind of can quick temperature measurement micro/nano level platinum
The temperature sensor of resistance.
As shown in figure 1, the sensor main will include four structures：Temperature sensing part 1, the fixed component 2, (precision of precise resistances 3
Higher resistance) and power supply 4.The part of temperature sensing part 1 is fixed in fixed component 2, as shown in figure 4, fixed component 2 is centre
The substrate slice of perforate；Temperature sensing part 1 includes the thermometric platinum film resistor block 6 of multiple bendings, leads between thermometric platinum film resistor block 6
Cross connection sheet 5 to connect, the part of connection sheet 5 is fixed on the middle bore edges of substrate slice, multiple thermometric platinum film resistor blocks 6 and company
The series connection of contact pin 5 forms annular and is suspended from interstitial hole, as shown in Figure 3；The head and the tail of the temperature sensing part 1 of annular are by wire 8 and power supply
4th, the composition of precise resistances 3 loop, as shown in Figure 1.
As shown in Fig. 2 in one embodiment of the present of invention, temperature sensing part 1 is by the thermometric platinum film resistor vacantly arranged
Block 6 and connection sheet 5 are constituted.As shown in Figures 3 and 5, the thermometric platinum film resistor block 6 be broken line type, such as square wave type, triangle wave mode,
Sine and cosine wave mode or other broken line shapes.The part of connection sheet 5 is fixed on substrate slice 7, is partly stretched out substrate slice and is formed hanging knot
Structure, the hanging structure of the connection sheet is connected to each hanging series connection platinum film resistor, such each group thermometric platinum film resistor block 6
It is cascaded by connection sheet 5, and surrounds an annular.Platinum film resistor block 6 can be one 100 microns long of resistance bolck Jing
Cross bending to form.
Temperature sensing part 1 is designed as annular, and the purpose of do so is the thermometric platinum of square wave type or other fold-line-shapeds for making series connection
The resistance value of film resistor 6 accounts for a larger share of total resistance value in loop, and connection sheet 5 is Jie Jin square geometric form
Shape, its resistance value very little.The design of this physical dimension and shape may insure temperature sensing part 1 in surveyed variation of ambient temperature
Can timely respond to, produce obvious resistance signal change.Thermometric platinum film resistor block 6 therein for one be bent into square wave type or
The cuboid platinum resistance block of other broken line shapes, cuboid film resistor can be regarded as by many square film resistor series connection
Into.By the resistance formula of objectFor square, the ratio of length L and cross section A is numerically equal to falling for thickness
Number.It follows that the size of the resistance value of square is only relevant with thickness.
Connection sheet 5 is the thickness identical platinum film piece of thickness and thermometric platinum film resistor block 6, and both are to be added using identical
The box-shaped platinum film block that work technique is realized.Using MEMS (Micro Electro Mechanical System, it is micro electronmechanical
System) sputtering and peel off (lift-off) technique complete.The only overhanging portion of connection sheet 5 is contacted with detected fluid environment during thermometric,
Because the resistance value of connection sheet 5 is much smaller than the resistance value of thermometric platinum film resistor block 6, this greatly reduces the resistance of connection sheet 5
Value is to the all-in resistance of temperature sensing part 1 because temperature change causes soon the impact of change in resistance.The design causes temperature-sensitive portion master
Concentrate on thermometric platinum film resistor block 6, it is ensured that temperature sensing part 1 has minimum time constant.
Fixed component 2 is that one piece of surface has the very thin of one layer of silicon oxide to have very much hole between alleviating distention in middle-JIAO (size in hole is large enough to hold survey
Warm platinum film resistor block 6) substrate slice.Connection sheet 5 can adopt the process portion of sputtering to be fixed at the bore edges of substrate slice 7,
Make thermometric platinum film resistor block 6 hanging (as shown in Figure 3), thus, the quality of main temperature-sensitive part thermometric platinum film resistor block 6 with
Thermal capacity is all greatly reduced, and its temperature-sensitive time constant is also greatly reduced.Platinum film resistor block 6 during thermometric in temperature sensing part 1 with
Tested fluid measured directly contact, can occur rapidly itself electricity using thermometric platinum film resistor block 6 with the change of ambient temperature
The change of resistance this feature, realizes quick temperature measurement.
The realization of temperature measurement circuit can by 3 liang of precise resistances, one voltmeter of termination, for reading thermometric during by
Cause the resistance variations of platinum film resistor block 6 in temperature, and then cause the voltage change signal at the two ends of precise resistances 3.
The sensor can adopt MEMS processing technique, and technological design is simple, and reliability is high.Wherein thermometric platinum film resistor block
6 and connection sheet 5 using standard metal sputtering and peel off (lift-off) technique, it is optional as the substrate slice 7 of fixed component
With silicon chip or sheet glass.Silicon chip is selected in one preferred embodiment of the present invention, silicon substrate film can be deposited first one layer of dioxy
SiClx, then using DRIE (Deep reactive ion etch, deep reaction ion etching) technique, etch a through hole.
Or one pit is etched with standard etching process in the one side for having metal, make metal temperature sensing part hanging.
The operation principle of the sensor is：Varied with temperature using the resistivity of platinum and change this ultimate principle, thermometric
When temperature sensing part 1 in the temperature sensor change in the temperature field of thermometric platinum film resistor block 6, temperature causes platinum resistance rate to make electricity
There is corresponding change in resistance, then drive the electric current in loop that respective change occurs, and finally be added in the voltage at the two ends of precise resistances 3
Also change, and then the variable signal read according to voltmeter, represent test environment temperature using corresponding mathematical formulae and cause
The relational expression of the temperature and time during resistance variations.
The example of one micro process of micro/nano level platinum resistance temperature sensor of the quick temperature measurement is：
1) using twin polishing silicon chip.Silicon chip is first cleaned with the cleaning of standard, then using depositing technics in silicon chip
A surface on generate layer of silicon dioxide (SiO2)。
2) silicon dioxide (SiO is being generated2) silicon chip surface, using platinum (Pt) sputter and peel off (lift-off) technique exist
Silicon chip surface forms the micro-nano graph of temperature sensing part and connection sheet.
Using deep reaction ion etching (DRIE) technique of MEMS standards, from the silicon chip surface without platinum film silicon circle is etched
Through-hole structure, the platinum structure sheaf until reaching another surface, finally gives the structure of figure two, three.The mask for wherein corroding
Layer can directly with photoresist or silicon nitride (Si3N4) thin layer.
The sensor of the embodiment of the present invention has the characteristics that：1) sensor is tightly played due to structure, be miniaturized it is higher, therefore
It can be applicable to the fast place of temperature change, such as Aero-Space, car combustion engine, gas turbine, metallurgy, electronics, medicine and oil
The thermometrics such as chemical industry require quick, rapid occasion of conducting heat.2) temperature-sensitive part is designed as the micro/nano level platinum electricity of the hanging arrangement of annular
Resistance, had so both greatly reduced resistance bolck quality and thermal capacity, and quickly carrying out for heat transfer is not interfered with again.3) temperature sensor
It is a kind of to be varied with temperature quickly to measure the sensing of fluid temperature (F.T.) according to platinum resistance in loop with very little time constant
Device.
It should be appreciated that for those of ordinary skills, can according to the above description be improved or be converted,
And all these modifications and variations should all belong to the protection domain of claims of the present invention.
Claims (5)
1. the micro/nano level platinum resistance temperature sensor of a kind of quick temperature measurement, it is characterised in that including power supply, precise resistances, with
And the temperature sensing part of micro/nano level；
Temperature sensing part part is fixed in fixed component, and fixed component is the substrate slice of central aperture；
Temperature sensing part includes the thermometric platinum film resistor block of multiple bendings, is connected by connection sheet between thermometric platinum film resistor block
Connect, connection sheet part is fixed on the middle bore edges of substrate slice, multiple thermometric platinum film resistor blocks and connection sheet connect to form ring
Shape is suspended from interstitial hole；The head and the tail of the temperature sensing part of annular constitute loop by wire with power supply, resistance；
Thermometric platinum film resistor block is the cuboid platinum resistance block for being bent into broken line shape, and connection sheet is and thermometric platinum film resistor
The cuboid platinum film block that block is realized using same processing technique, and thickness is identical.
2. the micro/nano level platinum resistance temperature sensor of quick temperature measurement according to claim 1, it is characterised in that bending
Thermometric platinum film resistor block is sinusoidal waveform, square wave type or triangular waveform.
3. the micro/nano level platinum resistance temperature sensor of quick temperature measurement according to claim 1, it is characterised in that connection sheet
It is with thermometric platinum film resistor block and micro-nano graph is formed in silicon chip surface using platinum sputtering and stripping technology.
4. the micro/nano level platinum resistance temperature sensor of quick temperature measurement according to claim 1, it is characterised in that substrate slice
For silicon chip, sheet glass or potsherd.
5. the micro/nano level platinum resistance temperature sensor of quick temperature measurement according to claim 1, it is characterised in that interstitial hole
It is generally circular in shape or square, and the interstitial hole is through hole or non through hole.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410403064.6A CN104132745B (en) | 2014-08-15 | 2014-08-15 | Micro-nano scale platinum resistor temperature sensor capable of fast measuring temperature |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410403064.6A CN104132745B (en) | 2014-08-15 | 2014-08-15 | Micro-nano scale platinum resistor temperature sensor capable of fast measuring temperature |
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| CN104132745A CN104132745A (en) | 2014-11-05 |
| CN104132745B true CN104132745B (en) | 2017-04-26 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104458191A (en) * | 2014-12-10 | 2015-03-25 | 中国航天空气动力技术研究院 | Miniature thin film platinum resistor heat flux transducer and manufacturing method thereof |
| CN104807554B (en) * | 2015-03-03 | 2019-01-01 | 江苏多维科技有限公司 | A kind of copper thermistor film temperature sensor chip and preparation method thereof |
| CN105444906B (en) * | 2015-11-23 | 2019-04-12 | 惠州学院 | High-sensitivity temperature sensor |
| JP2018066592A (en) * | 2016-10-17 | 2018-04-26 | Koa株式会社 | Platinum temperature sensor element |
| US11371892B2 (en) * | 2019-06-28 | 2022-06-28 | Fluke Corporation | Platinum resistance temperature sensor having floating platinum member |
| CN113804726B (en) * | 2021-08-11 | 2023-06-02 | 北京航空航天大学 | Manufacturing method of vibration-temperature measurement composite resonance humidity sensing chip for dew point measurement |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2530840B2 (en) * | 1987-03-31 | 1996-09-04 | 横河電機株式会社 | Thin film temperature sensor |
| DE19512813C1 (en) * | 1995-04-05 | 1996-06-20 | Sensotherm Temperatursensorik | Process for the production of components |
| TW375744B (en) * | 1996-12-10 | 1999-12-01 | Heraeus Electro Nite Int | Resistor having at least two coupled contact springs arranged on a ceramic base and process for the same |
| DE10219011B4 (en) * | 2002-04-27 | 2004-07-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Temperature sensor for an application in parting lines |
| CN1821733A (en) * | 2006-03-31 | 2006-08-23 | 上海电机成套联合有限公司 | Platinium heat resistor of 8-shape laying wire |
| JP2011053132A (en) * | 2009-09-03 | 2011-03-17 | Yamatake Corp | Temperature sensor of thin-film resistance |
| CN202403827U (en) * | 2011-12-23 | 2012-08-29 | 重庆市伟岸测器制造股份有限公司 | Temperature sensor |
| CN204043813U (en) * | 2014-08-15 | 2014-12-24 | 武汉工程大学 | The temperature sensor that response time is short |
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