CN113782430A - 去除阻挡层的方法 - Google Patents
去除阻挡层的方法 Download PDFInfo
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- CN113782430A CN113782430A CN202010519561.8A CN202010519561A CN113782430A CN 113782430 A CN113782430 A CN 113782430A CN 202010519561 A CN202010519561 A CN 202010519561A CN 113782430 A CN113782430 A CN 113782430A
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- 238000000034 method Methods 0.000 title claims abstract description 160
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 153
- 239000002184 metal Substances 0.000 claims abstract description 153
- 230000008569 process Effects 0.000 claims abstract description 100
- 238000005530 etching Methods 0.000 claims abstract description 93
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 62
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims abstract description 62
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims abstract description 62
- 230000003647 oxidation Effects 0.000 claims abstract description 54
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- 239000010949 copper Substances 0.000 claims abstract description 39
- 229910052802 copper Inorganic materials 0.000 claims abstract description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 239000002356 single layer Substances 0.000 claims abstract description 27
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 20
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- 238000010586 diagram Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
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- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明揭示了去除硅片上金属互连的阻挡层的方法,去除单层金属钌阻挡层,包括:氧化步骤,使用电化学阳极氧化工艺将单层的金属钌阻挡层氧化成钌氧化物层;氧化层刻蚀步骤,用刻蚀液对钌氧化物层进行刻蚀,去除钌氧化物层。本发明还提出去除硅片上金属互连的阻挡层的方法,用于10nm及以下的工艺节点的结构中,结构包括衬底、介质层、阻挡层和金属层,介质层沉积在衬底上,介质层上形成凹进区,阻挡层沉积在介质层上,金属层沉积在阻挡层上,金属层是铜层,阻挡层是单层金属钌层,该方法包括:减薄步骤,对金属层进行减薄;去除步骤,去除金属层;氧化步骤,对阻挡层进行氧化,氧化步骤使用电化学阳极氧化工艺;氧化层刻蚀步骤,刻蚀氧化后的阻挡层。
Description
技术领域
本发明涉及半导体技术领域,更具体地说,涉及半导体制造工艺领域。
背景技术
随着集成电路(IC)的特征尺寸逐渐缩小到14nm以下,目前开发的重点主要集中在10nm及以下工艺节点的制造技术上。在10nm及以下工艺节点中,在后段(BEOL)互连工艺中,传统的Ta/TaN双层阻挡层结构在铜互连线时会遇到互连线电阻急剧增大、铜种子层沉积不均匀等问题。
为克服这些问题,金属钌(Ruthenium,Ru)以其出色的电化学性能而被选择作为下一代IC制造中铜互连工艺的阻挡层。与Ta和TaN相比Ru具有更低的电阻率,并且与铜有非常好的黏附性。此外,铜可以比较容易地均匀沉积在金属钌层上。
阻挡层位于金属层和介质层之间,在整个制造过程中,部分的阻挡层需要被去除,另一部分的阻挡层会被保留。由于阻挡层通常是被金属层覆盖,在去除阻挡层时,需要先去除金属层,然后再去除阻挡层。研磨工艺和刻蚀工艺是半导体制造工艺中用来去除材料层的主要手段。
化学机械研磨(CMP)是最常用的研磨工艺,CMP被广泛用于去除多余的物质层从而为下一层金属化制造平坦的表面。CMP主要通过机械压力的方式进行材料去除,因此对于材料的化学属性并无特殊要求,CMP可以应用于金属层或者阻挡层的去除,包括对Cu、Ta、TaN、Ru等各种金属的研磨去除。对于金属钌来说,在研磨液中H2O2等氧化剂的氧化作用下,可以生成钌氧化物,然后钌氧化物被研磨去除。由于CMP工艺是基于机械压力,在CMP过程中使用下压力将晶圆压在研磨垫上研磨,晶圆在研磨时承受较大的压力,因此容易造成划伤、金属腐蚀磨损等缺陷,甚至因为应力碎片。在进入到10nm以下的工艺节点时,由于晶圆上的IC结构密度大幅度增加,晶圆承受机械应力的能力也随之下降,CMP的机械压力容易对晶圆和IC结构造成更大的损伤。此外,CMP研磨过程中需要消耗大量的研磨液、研磨垫等耗材,使得工艺的成本较高。
为了解决机械应力的问题,无应力抛光(SFP)技术得到了发展。SFP是一种电解抛光金属的工艺,通过电化学反应可以使金属氧化为金属离子进入到抛光液中,从而达到去除晶圆表面金属的目的。SFP较多地应用于金属铜的抛光,更多地用来去除金属层。SFP工艺主要依靠电化学反应来去除金属层,SFP的优点是工艺过程中没有外力加载在晶圆上,避免了划伤、金属腐蚀磨损等CMP常见缺陷。此外,SFP使用的抛光液可以回收循环利用,这样大大节省了工艺成本。
因为用作阻挡层的材料,比如Ta、TaN、Ru普遍具有较为稳定的化学性质,与大多数的化学制剂的反应较弱,仅与特定的化学制剂有较高的反应速率,因此SFP较少应用于直接去除阻挡层。针对阻挡层的去除,除了CMP之外,多使用化学制剂刻蚀的方式来去除。去除阻挡层最常用的刻蚀剂是HF,HF对于Ta和TaN都具有较好的刻蚀率。
但当阻挡层的材料变成金属钌Ru时,情况出现了改变,因为金属钌Ru的化学性质非常稳定,其与常用的SFP电解液(磷酸)和HF的反应速率都很低。试验数据表明:
金属钌Ru在质量分数30%~70%的磷酸作为电解液,施加的电流为5A条件下,60s周期内的去除量为3.2埃。
金属钌Ru在质量分数为0.01%~0.4%的HF作为刻蚀剂的条件下,60s周期内的去除量为2.6埃。
无论是SFP电解液还是HF,对于金属钌Ru的刻蚀速率都过低,无法满足工艺要求。如果重新开发适合于Ru的刻蚀剂,研发到量产的周期过长,短期内无法满足需求,因此,从工艺的角度入手来改善Ru的去除效率是较为实际的选择。
发明内容
本发明提出一种针对金属钌阻挡层的去除方法。
根据本发明的一实施例,提出一种去除硅片上金属互连的阻挡层的方法,用于10nm及以下的工艺节点,用于去除沉积在介质层和铜层之间的单层金属钌阻挡层,该方法包括:
氧化步骤,将单层的金属钌阻挡层氧化成钌氧化物层,所述氧化步骤使用电化学阳极氧化工艺对金属钌阻挡层进行氧化;
氧化层刻蚀步骤,用刻蚀液对钌氧化物层进行刻蚀,去除钌氧化物层。
在一个实施例中,电化学阳极氧化工艺通过阴极喷头从硅片中心到边缘进行电化学阳极氧化,或者从硅片边缘到中心进行电化学阳极氧化,电化学阳极氧化工艺中使用的电解液为质量分数30%~70%的磷酸,施加的电流为0A~5A。
在一个实施例中,氧化层刻蚀步骤中使用的刻蚀液是质量分数为0.01%~1wt%的HF,刻蚀液对于钌氧化物层和介质层的刻蚀速率比大于0.62:1。
根据本发明的一实施例,提出一种去除硅片上金属互连的阻挡层的方法,用于10nm及以下的工艺节点的结构中,所述结构包括衬底、介质层、阻挡层和金属层,介质层沉积在衬底上,介质层上形成凹进区,阻挡层沉积在介质层上,金属层沉积在阻挡层上,其中金属层是铜层,阻挡层是单层金属钌层,该方法包括:
减薄步骤,对金属层进行减薄,去除大部分的金属层并在阻挡层的表面留下连续的金属层;
去除步骤,去除非凹进区上的金属层以暴露出阻挡层,凹进区上的金属层保留预留厚度;
氧化步骤,将非凹进区上单层的金属钌阻挡层氧化成钌氧化物层,同时去除凹进区上保留的金属层,所述氧化步骤使用电化学阳极氧化工艺;
氧化层刻蚀步骤,用刻蚀液对非凹进区上的钌氧化物层进行刻蚀,去除钌氧化物层,使得凹进区和非凹进区经刻蚀后具有平坦的表面。
在一个实施例中,减薄步骤中,阻挡层的表面留下连续的金属层的厚度为500-1000埃,其中凹进区上的金属层的厚度大于非凹进区上的金属层。
在一个实施例中,电化学阳极氧化工艺通过阴极喷头从硅片中心到边缘进行电化学阳极氧化,或者从硅片边缘到中心进行电化学阳极氧化,电化学阳极氧化工艺中使用的电解液为质量分数30%~70%的磷酸,施加的电流为0A~5A。
在一个实施例中,电化学阳极氧化工艺中使用的电解液在对金属钌阻挡层进行氧化的同时对铜层进行去除,其中:
(对金属钌的氧化速率/对铜的去除速率)=(金属钌阻挡层的厚度/凹进区上铜层的预留厚度)。
在一个实施例中,氧化层刻蚀步骤中使用的刻蚀液是质量分数为0.01%~1wt%的HF,刻蚀液对于钌氧化物层和介质层的刻蚀速率比大于0.62:1。
根据本发明的一实施例,提出一种去除硅片上金属互连的阻挡层的方法,用于10nm及以下的工艺节点的结构中,所述结构包括衬底、介质层、阻挡层和金属层,介质层沉积在衬底上,介质层上形成凹进区,阻挡层沉积在介质层上,金属层沉积在阻挡层上,其中金属层是铜层,阻挡层是单层金属钌层,该方法包括:
采用CMP对金属层进行减薄直到2000埃以下的厚度并保持金属层连续;
采用电化学阳极氧化工艺去除非凹进区上的金属层并将非凹进区上单层的金属钌阻挡层氧化成钌氧化物层;
用刻蚀液对非凹进区上的钌氧化物层进行刻蚀,去除钌氧化物层,使得凹进区和非凹进区经刻蚀后具有平坦的表面。
根据本发明的一实施例,提出一种去除硅片上金属互连的阻挡层的方法,用于10nm及以下的工艺节点的结构中,所述结构包括衬底、介质层、阻挡层和金属层,介质层沉积在衬底上,介质层上形成凹进区,阻挡层沉积在介质层上,金属层沉积在阻挡层上,其中金属层是铜层,阻挡层是单层金属钌层,该方法包括:
采用CMP将非凹进区上的金属层全部去除直至裸露出阻挡层;
采用电化学阳极氧化工艺将非凹进区上单层的金属钌阻挡层氧化成钌氧化物层;
用刻蚀液对非凹进区上的钌氧化物层进行刻蚀,去除钌氧化物层,使得凹进区和非凹进区经刻蚀后具有平坦的表面。
本发明的去除阻挡层的方法采用先氧化再刻蚀的方式,有效解决了金属钌去除效率低的问题。氧化后的钌氧化物与HF的反应速度能够满足工艺要求。并且,通过调节HF的浓度,能够调节阻挡层和介质层的去除选择比。本发明利用电化学阳极氧化,例如SFP工艺实现对于金属钌的氧化,使得整体的工艺具备较高的效率和较低的成本。
附图说明
图1揭示了根据本发明的一实施例的去除硅片上金属互连的阻挡层的方法的流程图。
图2揭示了图1所示的实施例中针对金属钌的去除效果。
图3a和图3b揭示了图1所示的实施例的实施前后的比对图。
图4揭示了根据本发明的另一实施例的去除硅片上金属互连的阻挡层的方法的流程图。
图5a、5b、5c和5d揭示了图4所示的实施例的实施过程。
图6a揭示了通过阴极喷头从硅片中心到边缘进行电化学阳极氧化的示意图。
图6b揭示了通过阴极喷头从硅片边缘到中心进行电化学阳极氧化的示意图。
具体实施方式
首先参考图1所示,图1揭示了根据本发明的一实施例的去除硅片上金属互连的阻挡层的方法的流程图。图1所示的去除硅片上金属互连的阻挡层的方法可以认为是实验室的验证方法,以验证对于金属钌层的去除性能。该去除阻挡层的方法用于10nm及以下的工艺节点,用于去除沉积在介质层和铜层之间的单层金属钌阻挡层,该方法包括:
S101、氧化步骤。在氧化步骤中将单层的金属钌阻挡层氧化成钌氧化物层。氧化步骤使用电化学阳极氧化工艺对金属钌阻挡层进行氧化。在一个实施例中,电化学阳极氧化工艺通过阴极喷头从硅片中心到边缘进行电化学阳极氧化,或者从硅片边缘到中心进行电化学阳极氧化。图6a和图6b揭示了进行电化学阳极氧化的过程的示意图。其中图6a是通过阴极喷头从硅片中心到边缘进行电化学阳极氧化的示意图,图6b是通过阴极喷头从硅片边缘到中心进行电化学阳极氧化的示意图。采用不同的工艺方向从效果上来说并没有区别,可以根据配合的工艺和其他的实际需求来选择具体的工艺方向。在一个实施例中,氧化步骤中所采用的电化学阳极氧化工艺是SFP,电化学阳极氧化工艺(SFP)中使用的电解液为质量分数30%~70%的磷酸,施加的电流为0A~5A。
S102、氧化层刻蚀步骤。在氧化层刻蚀步骤中用刻蚀液对钌氧化物层进行刻蚀,去除钌氧化物层。在一个实施例中,氧化层刻蚀步骤中使用的刻蚀液是质量分数为0.01%~1wt%的HF,刻蚀液对于钌氧化物层和介质层的刻蚀速率比大于0.62:1。
在该去除阻挡层的方法的一个具体示例中,氧化步骤使用SFP电化学工艺实现,电解液是质量分数(wt%)30%~70%的磷酸,施加的电流为5A,持续时间60s。该示例的氧化层刻蚀步骤中使用的刻蚀液是质量分数(wt%)为0.3%的HF,刻蚀时间为60s。晶圆表面的金属钌层的初始厚度为2000埃。在经过SFP电化学工艺的氧化作用将金属钌氧化为钌氧化物后,HF对钌氧化物的刻蚀速率较高。经过60s的氧化步骤和60s的刻蚀步骤后,去除量为1393.7埃。该去除效率可以满足实际工艺的去除速率要求。
结合图2、图3a和图3b,揭示了该去除阻挡层的方法的另一个具体示例,在该具体示例中,通过控制电流或电压以及运动速率的方式优化SFP氧化参数,以得到不同的去除厚度和去除率形貌。其中的一个实施例为:施加的电流范围为0A~5A,在晶圆运动的不同位置其电流为给定的不同值;晶圆在不同位置以给定的运动速度运动,该实施例中运动速度范围为2.01-4.0mm/s。使用该方式对整片表面覆盖有金属钌Ru层的晶圆进行处理,然后使用0.1wt%的HF溶液刻蚀20s并进行后清洗。测量Ru层的去除量,其结果如图2所示。参考图2,Ru层去除量的整体轮廓比较平坦,经计算该条件下的平均去除量为183.4埃,均匀度(NU)为5.99%,达到工艺要求。图2中,横坐标R表示距离晶圆圆心的位置,单位为mm,纵坐标Ra表示测量的去除厚度,单位为埃。对晶圆的指定位置进行切片SEM分析,比如对半径90mm处进行切片SEM分析,可以看到钌层表面平坦光滑,计算其去除量为183埃。图3a和图3b分别揭示了实施氧化及刻蚀工艺之前的切片SEM分析照片以及之后的切片SEM分析照片。需要说明的是,由于切片工艺要求,图3a和图3b所示的照片并不是来自于同一片晶圆。但晶圆结构具有高度的一致性,即使是不同的晶圆,作为比对的依据依旧具有很高的参考意义。参考图3a所示,在工艺实施前,Ru层基准面的位置在226nm处。参考图3b所示,在工艺实施后,Ru层基准面的位置在207.7nm处,由此计算得到Ru层的去除量为183埃。
此外,在保证HF能将经由SFP电化学工艺氧化的钌氧化物层完全去除的条件下,Ru层的平均去除量与SFP的工艺时间的关系如下:
Ra(Ru)=3.1732t-28.6(埃)
式中:Ra(Ru)为Ru层的去除量;t为SFP工艺时间。
此处的Ru层的去除量是指:金属Ru层在经过SFP工艺氧化后在经过HF刻蚀而去除的金属Ru层。金属Ru层的厚度是以原始的(未经过SFP工艺)之前的金属Ru层为准进行计算。该公式中考虑得都是工艺前后金属Ru层的厚度,并不是工艺过程中钌氧化物层的厚度。
在一个实施例中,可以通过调节HF的浓度,即HF的质量分数(wt%)来调节对钌氧化物层及介质层SiO2的去除选择比:在相同的SFP氧化方式以及HF刻蚀时间的情况下,将HF浓度分别选择1wt%和0.1wt%,分别对金属Ru及介质层SiO2进行SFP氧化+HF处理,计算刻蚀量以及选择比。
经计算:1wt%的HF时,钌氧化物层(此处称为RuO)和SiO2的刻蚀选择比R(RuO)/R(SiO2)=0.62:1;0.1wt%的HF时,钌氧化物层和SiO2的刻蚀选择比R(RuO)/R(SiO2)=18.42:1。
在保证经SFP氧化的Ru被完全刻蚀掉的情况下,适当降低HF浓度可以提高对钌氧化物层和SiO2的刻蚀选择比。经实验测试,HF浓度≤0.4wt%时两者选择比可以达到5:1以上。因此,在一个实施例中,HF的浓度范围可以选择在0.01%~1wt%之间,以使得钌氧化物层和介质层的刻蚀速率比大于0.62:1。在另一个实施例中,HF的浓度范围可以选择在0.01wt%~0.4wt%之间,以使得钌氧化物层和介质层的刻蚀速率比大于5:1。
此外,通过实验得到,在刻蚀时间一定的情况下,HF对SiO2的刻蚀量符合以下公式:
Ra(SiO2)=16171*C(HF)+17.343(埃)
其中C是指HF的浓度(质量分数)。
参考图4所示,图4揭示了根据本发明的另一实施例的去除硅片上金属互连的阻挡层的方法的流程图。图4所示的去除硅片上金属互连的阻挡层的方法可以认为是能用于量产的现场实施工艺方法。图5a、5b、5c和5d揭示了图4所示的实施例的实施过程。该去除硅片上金属互连的阻挡层的方法用于10nm及以下的工艺节点的结构中,图5a揭示了该去除阻挡层的方法所使用的结构。该结构包括衬底501、介质层502、阻挡层503和金属层504。介质层502沉积在衬底501上,介质层上形成凹进区505,凹进区505是孔或者槽。阻挡层503沉积在介质层502上,金属层504沉积在阻挡层503上。其中金属层是铜Cu层,阻挡层是单层金属钌Ru层。该去除阻挡层的方法包括:
S401、减薄步骤,对金属层进行减薄,去除大部分的金属层并在阻挡层503的表面留下连续的金属层504。在一个实施例中,减薄步骤中,阻挡层503的表面留下连续的金属层504的厚度为500-1000埃,其中凹进区上的金属层的厚度大于非凹进区上的金属层。减薄步骤可以采用CMP工艺,也可以采用SPF工艺。经过减薄步骤之后的结构如图5b所示,在凹进区上保留较厚的金属层,而在非凹进区上仅保留较薄的金属层。
S402、去除步骤,去除非凹进区上的金属层以暴露出阻挡层,凹进区上的金属层保留预留厚度。去除步骤中将去除非凹进区上的所有的金属层,但是会在凹进区上保留一定厚度的金属层。保留金属层的目的是在下一步的氧化步骤中,继续使用SFP工艺,SFP工艺在对金属钌进行氧化的同时会对铜层进行刻蚀,为了避免在氧化步骤中凹进区的金属层出现过度刻蚀的情况,需要在凹进区上保留一定厚度的金属层。去除步骤通常是使用SFP工艺进行。
S403、氧化步骤,将非凹进区上单层的金属钌阻挡层氧化成钌氧化物层,同时去除凹进区上保留的金属层。氧化步骤采用电化学阳极氧化工艺来将金属钌阻挡层氧化成钌氧化物层。在一个实施例中,电化学阳极氧化工艺通过阴极喷头从硅片中心到边缘进行电化学阳极氧化,或者从硅片边缘到中心进行电化学阳极氧化。图6a和图6b揭示了进行电化学阳极氧化的过程的示意图。其中图6a是通过阴极喷头从硅片中心到边缘进行电化学阳极氧化的示意图,图6b是通过阴极喷头从硅片边缘到中心进行电化学阳极氧化的示意图。采用不同的工艺方向从效果上来说并没有区别,可以根据配合的工艺和其他的实际需求来选择具体的工艺方向。在一个实施例中,氧化步骤中所采用的电化学阳极氧化工艺是SFP,电化学阳极氧化工艺(SFP)中使用的电解液为质量分数30%~70%的磷酸,施加的电流为0A~5A。氧化步骤采用的SFP的参数与去除步骤中采用的SFP的参数有所不同。去除步骤中主要考虑对于铜层的有效刻蚀,而氧化步骤需要同时考虑对金属钌的氧化以及对于金属铜的刻蚀。在氧化步骤的SFP电化学工艺中使用的电解液在对金属钌阻挡层进行氧化的同时对铜层进行去除,其中:
(对金属钌的氧化速率/对铜的去除速率)=(金属钌阻挡层的厚度/凹进区上铜层的预留厚度)。
在一个实施例中,SFP电解液是质量分数(wt%)30%~70%的磷酸,施加的电流为5A,持续时间60s的条件下,对金属层Cu的抛光量是1052.6埃。计算得到同等的SFP电化学处理条件下,Ru氧化量与Cu抛光量的比值约为0.17:1。与之对应,步骤S402中凹进区上铜层的预留厚度与阻挡层Ru的厚度之比为1:0.17。经过氧化步骤之后的结构如图5c所示,非凹进区上的铜层被去除,凹进区505内保留有铜层504。非凹进区上的金属钌层被氧化为钌氧化物层506。凹进区505的侧壁上继续保留有金属钌层503。
S404、氧化层刻蚀步骤,用刻蚀液对非凹进区上的钌氧化物层进行刻蚀,去除钌氧化物层,使得凹进区和非凹进区经刻蚀后具有平坦的表面。在一个实施例中,氧化层刻蚀步骤中使用的刻蚀液是质量分数为0.01%~1wt%的HF,刻蚀液对于钌氧化物层和介质层的刻蚀速率比大于0.62:1。如前面所描述的,适当降低HF浓度可以提高对钌氧化物层和SiO2的刻蚀选择比,因此在另一个实施例中,HF的浓度范围可以选择在0.01wt%~0.4wt%之间,以使得钌氧化物层和介质层的刻蚀速率比大于5:1。经过氧化层刻蚀步骤之后的结构如图5d所示,非凹进区上的钌氧化物层被去除,凹进区505内保留有铜层504,凹进区505的侧壁上继续保留有金属钌层503作为单层阻挡层。凹进区和非凹进区经刻蚀后具有平坦的表面。
下面再介绍本发明的一实施例,也是去除硅片上金属互连的阻挡层的方法的一个具体实现过程,用于10nm及以下的工艺节点的结构中,所述结构包括衬底、介质层、阻挡层和金属层,介质层沉积在衬底上,介质层上形成凹进区,阻挡层沉积在介质层上,金属层沉积在阻挡层上,其中金属层是铜层,阻挡层是单层金属钌层。该方法与前述的方法具有相同的基本想法,但在部分工艺细节上有所不同,该方法包括:
采用CMP对金属层进行减薄直到2000埃以下的厚度并保持金属层连续。该方法在采用CMP对金属层减薄时会保留相对更多的金属层,约为2000埃。
采用电化学阳极氧化工艺去除非凹进区上的金属层并将非凹进区上单层的金属钌阻挡层氧化成钌氧化物层。该方法相当于使用电化学阳极氧化工艺来完成去除步骤和氧化步骤。
用刻蚀液对非凹进区上的钌氧化物层进行刻蚀,去除钌氧化物层,使得凹进区和非凹进区经刻蚀后具有平坦的表面。该步骤与前述的方法中的氧化层刻蚀步骤相同。
下面再介绍本发明的一实施例,也是去除硅片上金属互连的阻挡层的方法的一个具体实现过程,用于10nm及以下的工艺节点的结构中,所述结构包括衬底、介质层、阻挡层和金属层,介质层沉积在衬底上,介质层上形成凹进区,阻挡层沉积在介质层上,金属层沉积在阻挡层上,其中金属层是铜层,阻挡层是单层金属钌层。该方法与前述的方法具有相同的基本想法,但在部分工艺细节上有所不同,该方法包括:
采用CMP将非凹进区上的金属层全部去除直至裸露出阻挡层。该方法中,直接采用CMP去除全部的金属层。相当于减薄步骤和去除步骤合并由CMP完成。
采用电化学阳极氧化工艺将非凹进区上单层的金属钌阻挡层氧化成钌氧化物层。相当于由电化学阳极氧化工艺来完成氧化步骤。
用刻蚀液对非凹进区上的钌氧化物层进行刻蚀,去除钌氧化物层,使得凹进区和非凹进区经刻蚀后具有平坦的表面。该步骤与前述的方法中的氧化层刻蚀步骤相同。
本发明的去除阻挡层的方法采用先氧化再刻蚀的方式,有效解决了金属钌去除效率低的问题。氧化后的钌氧化物与HF的反应速度能够满足工艺要求。并且,通过调节HF的浓度,能够调节阻挡层和介质层的去除选择比。本发明利用电化学阳极氧化,例如SFP工艺实现对于金属钌的氧化,使得整体的工艺具备较高的效率和较低的成本。
还需要注意的是,以上所列举的实施例仅为本发明的具体实施例。显然本发明不局限于以上实施例,随之做出的类似变化或变形是本领域技术人员能从本发明公开的内容直接得出或者很容易便联想到的,均应属于本发明的保护范围。上述实施例是提供给熟悉本领域内的人员来实现或使用本发明的,熟悉本领域的人员可在不脱离本发明的发明思想的情况下,对上述实施例做出种种修改或变化,因而本发明的保护范围并不被上述实施例所限,而应该是符合权利要求书提到的创新性特征的最大范围。
Claims (10)
1.一种去除硅片上金属互连的阻挡层的方法,其特征在于,用于10nm及以下的工艺节点,用于去除沉积在介质层和铜层之间的单层金属钌阻挡层,该方法包括:
氧化步骤,将单层的金属钌阻挡层氧化成钌氧化物层,所述氧化步骤使用电化学阳极氧化工艺对金属钌阻挡层进行氧化;
氧化层刻蚀步骤,用刻蚀液对钌氧化物层进行刻蚀,去除钌氧化物层。
2.如权利要求1所述的去除硅片上金属互连的阻挡层的方法,其特征在于,所述电化学阳极氧化工艺通过阴极喷头从硅片中心到边缘进行电化学阳极氧化,或者从硅片边缘到中心进行电化学阳极氧化,电化学阳极氧化工艺中使用的电解液为质量分数30%~70%的磷酸,施加的电流为0A~5A。
3.如权利要求1所述的去除硅片上金属互连的阻挡层的方法,其特征在于,所述氧化层刻蚀步骤中使用的刻蚀液是质量分数为0.01%~1wt%的HF,刻蚀液对于钌氧化物层和介质层的刻蚀速率比大于0.62:1。
4.一种去除硅片上金属互连的阻挡层的方法,其特征在于,用于10nm及以下的工艺节点的结构中,所述结构包括衬底、介质层、阻挡层和金属层,介质层沉积在衬底上,介质层上形成凹进区,阻挡层沉积在介质层上,金属层沉积在阻挡层上,其中金属层是铜层,阻挡层是单层金属钌层,该方法包括:
减薄步骤,对金属层进行减薄,去除大部分的金属层并在阻挡层的表面留下连续的金属层;
去除步骤,去除非凹进区上的金属层以暴露出阻挡层,凹进区上的金属层保留预留厚度;
氧化步骤,将非凹进区上单层的金属钌阻挡层氧化成钌氧化物层,同时去除凹进区上保留的金属层,所述氧化步骤使用电化学阳极氧化工艺;
氧化层刻蚀步骤,用刻蚀液对非凹进区上的钌氧化物层进行刻蚀,去除钌氧化物层,使得凹进区和非凹进区经刻蚀后具有平坦的表面。
5.如权利要求4所述的去除硅片上金属互连的阻挡层的方法,其特征在于,减薄步骤中,阻挡层的表面留下连续的金属层的厚度为500-1000埃,其中凹进区上的金属层的厚度大于非凹进区上的金属层。
6.如权利要求4所述的去除硅片上金属互连的阻挡层的方法,其特征在于,所述电化学阳极氧化工艺通过阴极喷头从硅片中心到边缘进行电化学阳极氧化,或者从硅片边缘到中心进行电化学阳极氧化,电化学阳极氧化工艺中使用的电解液为质量分数30%~70%的磷酸,施加的电流为0A~5A。
7.如权利要求6所述的去除硅片上金属互连的阻挡层的方法,其特征在于,电化学阳极氧化工艺中使用的电解液在对金属钌阻挡层进行氧化的同时对铜层进行去除,其中:
(对金属钌的氧化速率/对铜的去除速率)=(金属钌阻挡层的厚度/凹进区上铜层的预留厚度)。
8.如权利要求1所述的去除硅片上金属互连的阻挡层的方法,其特征在于,所述氧化层刻蚀步骤中使用的刻蚀液是质量分数为0.01%~1wt%的HF,刻蚀液对于钌氧化物层和介质层的刻蚀速率比大于0.62:1。
9.一种去除硅片上金属互连的阻挡层的方法,其特征在于,用于10nm及以下的工艺节点的结构中,所述结构包括衬底、介质层、阻挡层和金属层,介质层沉积在衬底上,介质层上形成凹进区,阻挡层沉积在介质层上,金属层沉积在阻挡层上,其中金属层是铜层,阻挡层是单层金属钌层,该方法包括:
采用CMP对金属层进行减薄直到2000埃以下的厚度并保持金属层连续;
采用电化学阳极氧化工艺去除非凹进区上的金属层并将非凹进区上单层的金属钌阻挡层氧化成钌氧化物层;
用刻蚀液对非凹进区上的钌氧化物层进行刻蚀,去除钌氧化物层,使得凹进区和非凹进区经刻蚀后具有平坦的表面。
10.一种去除硅片上金属互连的阻挡层的方法,其特征在于,用于10nm及以下的工艺节点的结构中,所述结构包括衬底、介质层、阻挡层和金属层,介质层沉积在衬底上,介质层上形成凹进区,阻挡层沉积在介质层上,金属层沉积在阻挡层上,其中金属层是铜层,阻挡层是单层金属钌层,该方法包括:
采用CMP将非凹进区上的金属层全部去除直至裸露出阻挡层;
采用电化学阳极氧化工艺将非凹进区上单层的金属钌阻挡层氧化成钌氧化物层;
用刻蚀液对非凹进区上的钌氧化物层进行刻蚀,去除钌氧化物层,使得凹进区和非凹进区经刻蚀后具有平坦的表面。
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