CN113644881B - 用于带内载波聚合的接收器前端架构 - Google Patents

用于带内载波聚合的接收器前端架构

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Publication number
CN113644881B
CN113644881B CN202110939282.1A CN202110939282A CN113644881B CN 113644881 B CN113644881 B CN 113644881B CN 202110939282 A CN202110939282 A CN 202110939282A CN 113644881 B CN113644881 B CN 113644881B
Authority
CN
China
Prior art keywords
signal
transistor
electronic device
signal path
drain terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110939282.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN113644881A (zh
Inventor
G·拉简德兰
G·S·萨霍塔
R·库马
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN113644881A publication Critical patent/CN113644881A/zh
Application granted granted Critical
Publication of CN113644881B publication Critical patent/CN113644881B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L27/00—Modulated-carrier systems
    • H04L27/0002—Modulated-carrier systems analog front ends; means for connecting modulators, demodulators or transceivers to a transmission line
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L5/00—Arrangements affording multiple use of the transmission path
    • H04L5/003—Arrangements for allocating sub-channels of the transmission path
    • H04L5/0042—Intra-user or intra-terminal allocation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/492—A coil being added in the source circuit of a transistor amplifier stage as degenerating element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L5/00—Arrangements affording multiple use of the transmission path
    • H04L5/0001—Arrangements for dividing the transmission path
    • H04L5/0003—Two-dimensional division
    • H04L5/0005—Time-frequency
    • H04L5/0007—Time-frequency the frequencies being orthogonal, e.g. OFDM(A) or DMT
    • H04L5/001—Time-frequency the frequencies being orthogonal, e.g. OFDM(A) or DMT the frequencies being arranged in component carriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
CN202110939282.1A 2014-11-13 2015-09-30 用于带内载波聚合的接收器前端架构 Active CN113644881B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/540,900 2014-11-13
US14/540,900 US9385901B2 (en) 2014-11-13 2014-11-13 Receiver front end architecture for intra band carrier aggregation
PCT/US2015/053286 WO2016076962A1 (en) 2014-11-13 2015-09-30 Receiver front end architecture for intra band carrier aggregation
CN201580061296.0A CN107112957B (zh) 2014-11-13 2015-09-30 用于带内载波聚合的接收器前端架构

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201580061296.0A Division CN107112957B (zh) 2014-11-13 2015-09-30 用于带内载波聚合的接收器前端架构

Publications (2)

Publication Number Publication Date
CN113644881A CN113644881A (zh) 2021-11-12
CN113644881B true CN113644881B (zh) 2026-05-05

Family

ID=54337378

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202110939282.1A Active CN113644881B (zh) 2014-11-13 2015-09-30 用于带内载波聚合的接收器前端架构
CN201580061296.0A Active CN107112957B (zh) 2014-11-13 2015-09-30 用于带内载波聚合的接收器前端架构

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201580061296.0A Active CN107112957B (zh) 2014-11-13 2015-09-30 用于带内载波聚合的接收器前端架构

Country Status (5)

Country Link
US (1) US9385901B2 (enExample)
EP (1) EP3219016B1 (enExample)
JP (1) JP6686016B2 (enExample)
CN (2) CN113644881B (enExample)
WO (1) WO2016076962A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10381991B1 (en) * 2018-02-02 2019-08-13 Psemi Corporation Drain sharing split LNA
US11159191B1 (en) * 2020-09-11 2021-10-26 Apple Inc. Wireless amplifier circuitry for carrier aggregation
US11683062B2 (en) * 2021-08-17 2023-06-20 Qualcomm Incorporated Reconfigurable amplifier
US11539382B1 (en) 2021-10-19 2022-12-27 Psemi Corporation Supporting wideband inputs on RF receivers
US20250211281A1 (en) * 2023-12-21 2025-06-26 Texas Instruments Incorporated Integrated receiver transmitter switch

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103026625A (zh) * 2010-07-28 2013-04-03 高通股份有限公司 Rf隔离开关电路

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9928355D0 (en) 1999-12-01 2000-01-26 Koninkl Philips Electronics Nv Amplifier
US6636119B2 (en) * 2000-12-21 2003-10-21 Koninklijke Philips Electronics N.V. Compact cascode radio frequency CMOS power amplifier
US6725030B2 (en) * 2000-12-28 2004-04-20 Koninklijke Philips Electronics N.V. CMOS radio frequency amplifier with inverter driver
DE10344878B4 (de) 2003-09-26 2014-05-28 Infineon Technologies Ag Differenzverstärkeranordnung mit Stromregelkreis und Verfahren zum Betreiben einer Differenzverstärkeranordnung
US7889007B2 (en) 2005-08-02 2011-02-15 Qualcomm, Incorporated Differential amplifier with active post-distortion linearization
US7902925B2 (en) * 2005-08-02 2011-03-08 Qualcomm, Incorporated Amplifier with active post-distortion linearization
US7420425B2 (en) * 2006-09-28 2008-09-02 Via Technologies, Inc. Power amplifier and method thereof
WO2008102788A1 (ja) * 2007-02-20 2008-08-28 Nagoya Industrial Science Research Institute プログラマブル低雑音増幅装置
US7701289B2 (en) 2007-10-24 2010-04-20 Industrial Technology Research Institute Variable gain amplifier including series-coupled cascode amplifiers
US7696828B2 (en) * 2008-01-04 2010-04-13 Qualcomm, Incorporated Multi-linearity mode LNA having a deboost current path
US7656229B2 (en) * 2008-01-28 2010-02-02 Qualcomm, Incorporated Method and apparatus for reducing intermodulation distortion in an electronic device having an amplifier circuit
US7936220B2 (en) 2008-12-12 2011-05-03 Qualcomm, Incorporated Techniques for improving amplifier linearity
US8031005B2 (en) * 2009-03-23 2011-10-04 Qualcomm, Incorporated Amplifier supporting multiple gain modes
CN102844983B (zh) * 2010-03-02 2015-07-15 马维尔国际贸易有限公司 双载波放大器电路和方法
EP2590351A3 (en) * 2011-11-04 2013-05-22 ST-Ericsson SA Non-contiguous carrier aggregation
US9154356B2 (en) 2012-05-25 2015-10-06 Qualcomm Incorporated Low noise amplifiers for carrier aggregation
US8913976B2 (en) * 2012-10-23 2014-12-16 Qualcomm Incorporated Amplifiers with shunt switches
US8975968B2 (en) * 2013-01-25 2015-03-10 Qualcomm Incorporated Amplifiers with improved isolation
US9106185B2 (en) * 2013-03-11 2015-08-11 Qualcomm Incorporated Amplifiers with inductive degeneration and configurable gain and input matching

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103026625A (zh) * 2010-07-28 2013-04-03 高通股份有限公司 Rf隔离开关电路

Also Published As

Publication number Publication date
JP6686016B2 (ja) 2020-04-22
CN113644881A (zh) 2021-11-12
JP2018501695A (ja) 2018-01-18
US9385901B2 (en) 2016-07-05
CN107112957A (zh) 2017-08-29
EP3219016A1 (en) 2017-09-20
WO2016076962A1 (en) 2016-05-19
CN107112957B (zh) 2021-08-20
US20160142231A1 (en) 2016-05-19
EP3219016B1 (en) 2019-07-10

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