CN113614935A - 微型led紫外辐射源及其制造方法 - Google Patents

微型led紫外辐射源及其制造方法 Download PDF

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Publication number
CN113614935A
CN113614935A CN201980094444.7A CN201980094444A CN113614935A CN 113614935 A CN113614935 A CN 113614935A CN 201980094444 A CN201980094444 A CN 201980094444A CN 113614935 A CN113614935 A CN 113614935A
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CN
China
Prior art keywords
layer
micro
led
light
radiation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980094444.7A
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English (en)
Chinese (zh)
Inventor
岸本克彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sakai Display Products Corp
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Sakai Display Products Corp
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Filing date
Publication date
Application filed by Sakai Display Products Corp filed Critical Sakai Display Products Corp
Publication of CN113614935A publication Critical patent/CN113614935A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Led Devices (AREA)
CN201980094444.7A 2019-03-22 2019-03-22 微型led紫外辐射源及其制造方法 Pending CN113614935A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/012154 WO2020194388A1 (ja) 2019-03-22 2019-03-22 マイクロｌｅｄ紫外放射源及びその製造方法

Publications (1)

Publication Number Publication Date
CN113614935A true CN113614935A (zh) 2021-11-05

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ID=72610387

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980094444.7A Pending CN113614935A (zh) 2019-03-22 2019-03-22 微型led紫外辐射源及其制造方法

Country Status (4)

Country Link
US (1) US20220165925A1 (https=)
JP (1) JPWO2020194388A1 (https=)
CN (1) CN113614935A (https=)
WO (1) WO2020194388A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3105879B1 (fr) * 2019-12-26 2023-11-03 Thales Sa Afficheur à microLEDs à émission au travers de la matrice active
TW202512546A (zh) * 2020-12-28 2025-03-16 大陸商上海顯耀顯示科技有限公司 微發光二極體結構及包括該結構之微發光二極體晶片
TWI811810B (zh) * 2021-10-13 2023-08-11 錼創顯示科技股份有限公司 微型發光二極體顯示面板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104854696A (zh) * 2012-12-14 2015-08-19 欧司朗光电半导体有限公司 显示设备和用于制造显示设备的方法
JP2015174026A (ja) * 2014-03-14 2015-10-05 日機装株式会社 光照射装置
CN108292696A (zh) * 2015-11-10 2018-07-17 欧司朗光电半导体有限公司 光电子半导体组件和用于制造光电子半导体组件的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007305621A (ja) * 2006-05-08 2007-11-22 New Paradigm Technology Inc 発光構造物
JP2011198997A (ja) * 2010-03-19 2011-10-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP5533695B2 (ja) * 2011-01-26 2014-06-25 豊田合成株式会社 半導体チップの製造方法および半導体チップの実装方法
JP6550768B2 (ja) * 2015-01-30 2019-07-31 日亜化学工業株式会社 発光装置の製造方法
JP6380590B2 (ja) * 2016-06-30 2018-08-29 日亜化学工業株式会社 Ｌｅｄモジュール
TWI646651B (zh) * 2017-01-26 2019-01-01 宏碁股份有限公司 發光二極體顯示器及其製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104854696A (zh) * 2012-12-14 2015-08-19 欧司朗光电半导体有限公司 显示设备和用于制造显示设备的方法
JP2015174026A (ja) * 2014-03-14 2015-10-05 日機装株式会社 光照射装置
CN108292696A (zh) * 2015-11-10 2018-07-17 欧司朗光电半导体有限公司 光电子半导体组件和用于制造光电子半导体组件的方法

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Publication number Publication date
US20220165925A1 (en) 2022-05-26
WO2020194388A1 (ja) 2020-10-01
JPWO2020194388A1 (https=) 2020-10-01

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Application publication date: 20211105