CN113555462A - 一种双结型Ga2O3器件及其制备方法 - Google Patents

一种双结型Ga2O3器件及其制备方法 Download PDF

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CN113555462A
CN113555462A CN202110759617.1A CN202110759617A CN113555462A CN 113555462 A CN113555462 A CN 113555462A CN 202110759617 A CN202110759617 A CN 202110759617A CN 113555462 A CN113555462 A CN 113555462A
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李京波
王小周
赵艳
李翎
任家呈
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Zhejiang Xinke Semiconductor Co Ltd
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Abstract

本发明公开了一种双结型Ga2O3器件及其制备方法，所述制备方法包括：选取柔性衬底；在柔性衬底的上表面覆盖多层BN薄膜，形成第一BN薄膜层；在第一BN薄膜层上设置Ga2O3衬底并加热，以使Ga2O3衬底与第一BN薄膜层紧密贴合；在Ga2O3衬底上进行离子注入，形成P型Ga2O3层；在P型Ga2O3层上进行离子注入，形成N型Ga2O3层；在N型Ga2O3层的上表面生长ZnSe荧光层；在ZnSe荧光层的上表面涂覆可见光反射层；在可见光反射层的上表面两侧分别刻蚀制作源电极和漏电极；在源电极、漏电极及可见光反射层的上表面覆盖多层BN薄膜，形成第二BN薄膜层。该双结型Ga2O3器件具有优秀的芯片性能，能承受更高的温度和电压，能应用在大电压、大功率的设备与场景中。

Description

一种双结型Ga2O3器件及其制备方法
技术领域
本发明属于微电子技术领域，具体涉及一种双结型Ga2O3器件及其制备方法。
背景技术
双结型晶体管(bipolar junction transistor)可应用于高频以及高功率的应用中。尤其是双结型晶体管可在无线通信系统与移动器件、开关、以及振荡器等的放大器中找到具体的最终用途。双结型晶体管同样也可用于高速逻辑电路。
SiC以其优良的物理化学特性和电学特性成为制造高温、大功率电子器件的一种最有优势的半导体材料，并且具有远大于Si材料的功率器件品质因子。传统的双结型SiC器件由于SiC的载流子迁移率不高以及耐压值有限的原因，无法对传统双结型半导体器件有所突破；而且双结型SiC器件对紫外光探索的探测时间较慢，无法投用于实际的产业中。
发明内容
为了解决现有技术中存在的上述问题，本发明提供了一种双结型Ga2O3器件及其制备方法。本发明要解决的技术问题通过以下技术方案实现：
本发明的一个方面提供了一种双结型Ga2O3器件的制备方法，包括：
S1：选取柔性衬底；
S2：在所述柔性衬底的上表面覆盖多层BN薄膜，形成第一BN薄膜层；
S3：在所述第一BN薄膜层上设置Ga2O3衬底并加热，以使所述Ga2O3衬底与所述第一BN薄膜层紧密贴合；
S4：在所述Ga2O3衬底上进行离子注入，形成P型Ga2O3层；
S5：在所述P型Ga2O3层上进行离子注入，形成N型Ga2O3层，且所述N型Ga2O3层的厚度小于所述P型Ga2O3层的厚度；
S6：在所述N型Ga2O3层的上表面生长ZnSe荧光层；
S7：在所述ZnSe荧光层的上表面涂覆可见光反射层；
S8：在所述可见光反射层的上表面两侧分别刻蚀制作源电极和漏电极，使得所述源电极和所述漏电极的下表面均与所述Ga2O3衬底的上表面接触；
S9：在所述源电极、所述漏电极及所述可见光反射层的上表面覆盖多层BN薄膜，形成第二BN薄膜层。
在本发明的一个实施例中，所述柔性衬底为厚度1-2mm的PET柔性衬底，所述Ga2O3衬底的厚度为150-200μm。
在本发明的一个实施例中，在步骤S3中，加热温度为150-200℃。
在本发明的一个实施例中，所述P型Ga2O3层的掺杂元素为B或N元素，掺杂浓度为1×1022-3×1022cm-3，厚度为5-10μm。
在本发明的一个实施例中，所述N型Ga2O3层的掺杂元素为P元素，掺杂浓度为1×1023-4×1023cm-3，厚度为2-5μm。
在本发明的一个实施例中，所述ZnSe荧光层的厚度为60-100nm，所述可见光反射层的材料为Ag，厚度为10-15μm。
在本发明的一个实施例中，所述第一BN薄膜层和所述第二BN薄膜层分别包括5至10层BN薄膜，总厚度为5-10nm。
本发明的另一方面提供了一种双结型Ga2O3器件，包括柔性衬底、第一BN薄膜层、Ga2O3衬底、P型Ga2O3层、N型Ga2O3层、ZnSe荧光层、可见光反射层、源电极、漏电极及第二BN薄膜层，其中，
所述柔性衬底、所述第一BN薄膜层、所述Ga2O3衬底、所述P型Ga2O3层、所述N型Ga2O3层、所述ZnSe荧光层和所述可见光反射层自下而上依次设置；
所述源电极和所述漏电极分别位于所述P型Ga2O3层、所述N型Ga2O3层、所述ZnSe荧光层和所述可见光反射层形成的层叠结构的两侧，并且所述源电极和所述漏电极的下表面均与所述Ga2O3衬底的上表面接触；
所述第二BN薄膜层设置在所述源电极、所述漏电极及所述可见光反射层的上表面。
在本发明的一个实施例中，所述P型Ga2O3层的掺杂元素为B或N元素，掺杂浓度为1×1022-3×1022cm-3；所述N型Ga2O3层的掺杂元素为P元素，掺杂浓度为1×1023-4×1023cm-3。
在本发明的一个实施例中，所述第一BN薄膜层和所述第二BN薄膜层分别包括5-10层BN薄膜，厚度为5-10nm。
与现有技术相比，本发明的有益效果在于：
1、本发明的双结型Ga2O3器件包括Ga2O3衬底，Ga2O3具有宽的带隙且更耐高压，其独特的物理性质使其更加稳定以及耐高温；在光学上，Ga2O3对紫外光的响应非常快且有着超高的响应系数，因此制备的双结型Ga2O3器件具有优秀的芯片性能，能承受更高的温度和电压，能应用在大电压、大功率的设备与场景中。
2、本发明的双结型Ga2O3器件，具有PET柔性衬底，使器件能作为压电可穿戴传感器，其双PN结能有效提高其内部的极化电荷数目，受到应变后其极化率有所提高，增强了本质的压电性能，因此器件的压光电性也能有大幅度的提高，提高了其作为压电传感器的性能。
3、该双结型Ga2O3器件在器件的顶部及PET衬底的上方均覆盖了薄层的BN薄膜，BN薄膜与器件会产生电子沟道，从而提高了迁移率，因此会提高器件的稳定性以及电学特性。
以下将结合附图及实施例对本发明做进一步详细说明。
附图说明
图1是本发明实施例提供的一种双结型Ga2O3器件的制备方法流程图；
图2a至图2g是本发明实施例提供的一种双结型Ga2O3器件的制备过程示意图。
附图标记说明：
1-柔性衬底；2-第一BN薄膜层；3-Ga2O3衬底；4-P型Ga2O3层；5-ZnSe荧光层；6-可见光反射层；7-源电极；8-漏电极；9-漏电极；10-第二BN薄膜层。
具体实施方式
为了进一步阐述本发明为达成预定发明目的所采取的技术手段及功效，以下结合附图及具体实施方式，对依据本发明提出的一种双结型Ga2O3器件及其制备方法进行详细说明。
有关本发明的前述及其他技术内容、特点及功效，在以下配合附图的具体实施方式详细说明中即可清楚地呈现。通过具体实施方式的说明，可对本发明为达成预定目的所采取的技术手段及功效进行更加深入且具体地了解，然而所附附图仅是提供参考与说明之用，并非用来对本发明的技术方案加以限制。
应当说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的物品或者设备中还存在另外的相同要素。
实施例一
请参见图1，图1是本发明实施例提供的一种双结型Ga2O3器件的制备方法流程图。该双结型Ga2O3器件的制备方法包括：
S1：选取柔性衬底。
该柔性衬底为厚度1-2mm，长度2-3cm，宽度2-3cm的PET(Polyethyleneterephthalate，涤纶树脂)柔性衬底。柔性衬底选取该厚度能确保在受到应变时，应变能精准地施加在器件上。
S2：在柔性衬底的上表面覆盖多层BN薄膜，形成第一BN薄膜层。
具体地，利用转移平台将5-10层、总厚度为5-10nm，大小为80-120μm左右的正方形BN薄膜转移放置到上述PET柔性衬底上表面中央处。BN薄膜在5-10层对器件的整体厚度不造成影响，又能有效提高其电子迁移率。
S3：在第一BN薄膜层上设置Ga2O3衬底并加热，以使Ga2O3衬底与第一BN薄膜层紧密贴合。
具体地，利用转移平台将外延生长的150-200μm厚的Ga2O3衬底转移至第一BN薄膜层上并在150-200℃温度条件下进行加热，使得Ga2O3衬底与BN薄膜紧密贴合。
S4：使用全自动离子注入机在Ga2O3衬底上进行掺杂元素离子注入，形成P型Ga2O3层。
所形成的P型Ga2O3层的掺杂元素为B或N元素，掺杂浓度为1×1022-3×1022cm-3，厚度为5-10μm。
S5：使用全自动离子注入机在P型Ga2O3层上进行掺杂元素离子注入，形成N型Ga2O3层，且N型Ga2O3层的厚度小于P型Ga2O3层的厚度。
具体地，N型Ga2O3层的掺杂元素为P元素，掺杂浓度为1×1023-4×1023cm-3，厚度为2-5μm。
S6：在N型Ga2O3层的上上表面利用单温区管式炉在700℃下生长ZnSe荧光层，所述ZnSe荧光层的厚度为60-100nm。
S7：在ZnSe荧光层的上表面利用金属蒸镀仪以10nm/s的速度涂覆可见光反射层，可见光反射层的材料为Ag，厚度为10-15μm。
S8：在可见光反射层的上表面两侧分别刻蚀制作源电极和漏电极，使得源电极和漏电极的下表面均与Ga2O3衬底的上表面接触；
具体地，通过光刻使器件分出刻蚀区和非刻蚀区，利用刻蚀工艺在可见光反射层的上表面两侧进行刻蚀，形成源电极凹槽和漏电极凹槽，再通过金属蒸镀仪分别制作源电极和漏电极，其电极材料为金，厚度为20-25μm，且源电极和漏电极的下表面均与Ga2O3衬底的上表面接触。
S9：在源电极、漏电极及可见光反射层的上表面覆盖多层BN薄膜，形成第二BN薄膜层。
具体地，利用转移平台将厚度为5-10层、总厚度为5-10nm，大小为80-120μm左右的正方形BN薄膜转移放置到整个器件的上表面，以覆盖源电极、漏电极及可见光反射层的上表面。
本实施例的双结型Ga2O3器件包括Ga2O3衬底，Ga2O3具有宽的带隙且更耐高压，其独特的物理性质使其更加稳定以及耐高温；在光学上，Ga2O3对紫外光的响应非常快且有着超高的响应系数，因此制备的双结型Ga2O3器件具有优秀的芯片性能，能承受更高的温度和电压，能应用在大电压、大功率的设备与场景中。
实施例二
在实施例一的基础上，本实施例详细描述了一种双结型Ga2O3器件的制备方法。请参见图2a至图2g，图2a至图2g是本发明实施例提供的一种双结型Ga2O3器件的制备过程示意图。本实施例的制备方法包括：
步骤1：选取柔性衬底1，该柔性衬底为厚度2mm，长度3cm，宽度3cm的PET柔性衬底。
步骤2：利用转移平台将厚度为5层、总厚度为5nm，大小为100μm左右的正方形BN薄膜转移放置到上述PET柔性衬底的中央，形成第一BN薄膜层2，如图2a所示。
步骤3：利用转移平台将外延生长的150厚的Ga2O3衬底3转移至BN薄膜上并进行200℃的加热，使Ga2O3衬底3与第一BN薄膜层2紧密贴合，如图2b所示。
步骤4：在Ga2O3衬底上进行离子注入，形成P型Ga2O3层4，所形成的P型Ga2O3层4的掺杂元素为B或N元素，掺杂浓度为2×1022cm-3，厚度为6μm，如图2c所示。
步骤5：在P型Ga2O3层4上进行离子注入，形成N型Ga2O3层5，N型Ga2O3层5的掺杂元素为P元素，掺杂浓度为1×1023cm-3，厚度为3μm，如图2d所示。
步骤6：在N型Ga2O3层5的上表面生长ZnSe荧光层6，所述ZnSe荧光层6的厚度为80nm。
步骤7：在ZnSe荧光层6的上表面涂覆可见光反射层7，可见光反射层7的材料为Ag，厚度为10μm，如图2e所示。
步骤8：在可见光反射层7的上表面两侧分别刻蚀制作源电极8和漏电极9，使得源电极8和漏电极9的下表面均与Ga2O3衬底3的上表面接触；
具体地，通过光刻和刻蚀工艺在可见光反射层7的上表面两侧分别制作源电极8和漏电极9，其电极材料为金，厚度为20μm，且源电极8和漏电极9的下表面均与Ga2O3衬底3的上表面接触，如图2f所示。
步骤9：利用转移平台将厚度为5层、总厚度为5nm，大小为100μm左右的正方形BN薄膜转移放置到整个器件的上表面，以覆盖源电极8、漏电极9及可见光反射层7的上表面，从而完成该双结型Ga2O3器件的制备，如图2g所示。
本实施例制备的本发明的双结型Ga2O3器件，具有PET柔性衬底，使器件能作为压电可穿戴传感器，其双PN结能有效提高其内部的极化电荷数目，受到应变后其极化率有所提高，增强了本质的压电性能，因此器件的压光电性也能有大幅度的提高，提高了其作为压电传感器的性能。
实施例三
在上述实施例的基础上，本实施例提供了一种双结型Ga2O3器件。如图2g所示，该双结型Ga2O3器件包括柔性衬底1、第一BN薄膜层2、Ga2O3衬底3、P型Ga2O3层4、N型Ga2O3层5、ZnSe荧光层6、可见光反射层7、源电极8、漏电极9及第二BN薄膜层10，其中，柔性衬底1、第一BN薄膜层2、Ga2O3衬底3、P型Ga2O3层4、N型Ga2O3层5、ZnSe荧光层6和可见光反射层7自下而上依次设置；源电极8和漏电极9分别位于P型Ga2O3层4、N型Ga2O3层5、ZnSe荧光层6和可见光反射层7形成的层叠结构的两侧，并且源电极8和漏电极9的下表面均与Ga2O3衬底3的上表面接触；第二BN薄膜层10设置在源电极8、漏电极9及可见光反射层7的上表面。
进一步地，P型Ga2O3层4的掺杂元素为B或N元素，掺杂浓度为1×1022-7×1022cm-3，厚度为5-10μm；N型Ga2O3层5的掺杂元素为P元素，掺杂浓度为1×1023-8×1023cm-3，厚度为2-5μm。
进一步地，该柔性衬底为厚度1-2mm，长度2-3cm，宽度2-3cm的PET(Polyethyleneterephthalate，涤纶树脂)柔性衬底；第一BN薄膜层2和第二BN薄膜层10分别包括5-10层BN薄膜，厚度为5-10nm。
更进一步的，所述ZnSe荧光层的厚度为60-100nm，可见光反射层的材料为Ag，厚度为10-15μm，源电极和漏电极，其电极材料为金，厚度为20-25μm。
本发明实施例的双结型Ga2O3器件，具有PET柔性衬底，使器件能作为压电可穿戴传感器，其双PN结使器件的压光电性能有大幅度的提高，提高了其作为压电传感器的性能。该双结型Ga2O3器件在器件的顶部及PET衬底的上方均覆盖了薄层的BN薄膜，BN薄膜与器件会产生电子沟道，从而提高了迁移率，因此会提高器件的稳定性以及电学特性。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。

Claims (10)

1.一种双结型Ga2O3器件的制备方法，其特征在于，包括：
S1：选取柔性衬底；
S2：在所述柔性衬底的上表面覆盖多层BN薄膜，形成第一BN薄膜层；
S3：在所述第一BN薄膜层上设置Ga2O3衬底并加热，以使所述Ga2O3衬底与所述第一BN薄膜层紧密贴合；
S4：在所述Ga2O3衬底上进行离子注入，形成P型Ga2O3层；
S5：在所述P型Ga2O3层上进行离子注入，形成N型Ga2O3层，且所述N型Ga2O3层的厚度小于所述P型Ga2O3层的厚度；
S6：在所述N型Ga2O3层的上表面生长ZnSe荧光层；
S7：在所述ZnSe荧光层的上表面涂覆可见光反射层；
S8：在所述可见光反射层的上表面两侧分别刻蚀制作源电极和漏电极，使得所述源电极和所述漏电极的下表面均与所述Ga2O3衬底的上表面接触；
S9：在所述源电极、所述漏电极及所述可见光反射层的上表面覆盖多层BN薄膜，形成第二BN薄膜层。
2.根据权利要求1所述的双结型Ga2O3器件的制备方法，其特征在于，所述柔性衬底为厚度1-2mm的PET柔性衬底，所述Ga2O3衬底的厚度为150-200μm。
3.根据权利要求1所述的双结型Ga2O3器件的制备方法，其特征在于，在步骤S3中，加热温度为150-200℃。
4.根据权利要求1所述的双结型Ga2O3器件的制备方法，其特征在于，所述P型Ga2O3层的掺杂元素为B或N元素，掺杂浓度为1×1022-3×1022cm-3，厚度为5-10μm。
5.根据权利要求4所述的双结型Ga2O3器件的制备方法，其特征在于，所述N型Ga2O3层的掺杂元素为P元素，掺杂浓度为1×1023-4×1023cm-3，厚度为2-5μm。
6.根据权利要求1所述的双结型Ga2O3器件的制备方法，其特征在于，所述ZnSe荧光层的厚度为60-100nm，所述可见光反射层的材料为Ag，厚度为10-15μm。
7.根据权利要求1至6中任一项所述的双结型Ga2O3器件的制备方法，其特征在于，所述第一BN薄膜层和所述第二BN薄膜层分别包括5至10层BN薄膜，总厚度为5-10nm。
8.一种双结型Ga2O3器件，其特征在于，包括柔性衬底(1)、第一BN薄膜层(2)、Ga2O3衬底(3)、P型Ga2O3层(4)、N型Ga2O3层(5)、ZnSe荧光层(6)、可见光反射层(7)、源电极(8)、漏电极(9)及第二BN薄膜层(10)，其中，
所述柔性衬底(1)、所述第一BN薄膜层(2)、所述Ga2O3衬底(3)、所述P型Ga2O3层(4)、所述N型Ga2O3层(5)、所述ZnSe荧光层(6)和所述可见光反射层(7)自下而上依次设置；
所述源电极(8)和所述漏电极(9)分别位于所述P型Ga2O3层(4)、所述N型Ga2O3层(5)、所述ZnSe荧光层(6)和所述可见光反射层(7)形成的层叠结构的两侧，并且所述源电极(8)和所述漏电极(9)的下表面均与所述Ga2O3衬底(3)的上表面接触；
所述第二BN薄膜层(10)设置在所述源电极(8)、所述漏电极(9)及所述可见光反射层(7)的上表面。
9.根据权利要求8所述的双结型Ga2O3器件，其特征在于，所述P型Ga2O3层(4)的掺杂元素为B或N元素，掺杂浓度为1×1022-3×1022cm-3；所述N型Ga2O3层(5)的掺杂元素为P元素，掺杂浓度为1×1023-4×1023cm-3。
10.根据权利要求8或9所述的双结型Ga2O3器件，其特征在于，所述第一BN薄膜层(2)和所述第二BN薄膜层(10)分别包括5-10层BN薄膜，厚度为5-10nm。
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