CN113555446A - 一种基于金刚石终端结构的Ga2O3肖特基二极管及制作方法 - Google Patents
一种基于金刚石终端结构的Ga2O3肖特基二极管及制作方法 Download PDFInfo
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- CN113555446A CN113555446A CN202110645737.9A CN202110645737A CN113555446A CN 113555446 A CN113555446 A CN 113555446A CN 202110645737 A CN202110645737 A CN 202110645737A CN 113555446 A CN113555446 A CN 113555446A
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 210
- 239000010432 diamond Substances 0.000 title claims abstract description 210
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000010410 layer Substances 0.000 claims abstract description 232
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 116
- 239000002344 surface layer Substances 0.000 claims abstract description 5
- 238000002161 passivation Methods 0.000 claims description 55
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 9
- 230000005684 electric field Effects 0.000 abstract description 13
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 230000003068 static effect Effects 0.000 abstract description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 241001354791 Baliga Species 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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CN202110645737.9A CN113555446B (zh) | 2021-06-09 | 2021-06-09 | 一种基于金刚石终端结构的Ga2O3肖特基二极管及制作方法 |
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CN202110645737.9A CN113555446B (zh) | 2021-06-09 | 2021-06-09 | 一种基于金刚石终端结构的Ga2O3肖特基二极管及制作方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114525585A (zh) * | 2022-01-05 | 2022-05-24 | 西安电子科技大学 | 采用预铺Ga层在金刚石上外延β-Ga2O3薄膜的制备方法及结构 |
CN115799311A (zh) * | 2023-01-31 | 2023-03-14 | 深圳市威兆半导体股份有限公司 | 高压碳化硅功率器件终端及其制造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09191109A (ja) * | 1995-11-06 | 1997-07-22 | Toshiba Corp | 半導体装置 |
JP2004327824A (ja) * | 2003-04-25 | 2004-11-18 | National Institute Of Advanced Industrial & Technology | 半導体装置 |
JP2005327912A (ja) * | 2004-05-14 | 2005-11-24 | Toshiba Corp | 半導体装置 |
JP2013012568A (ja) * | 2011-06-29 | 2013-01-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
CN106298974A (zh) * | 2015-05-22 | 2017-01-04 | 朱江 | 一种半导体结装置 |
CN109449085A (zh) * | 2018-09-12 | 2019-03-08 | 秦皇岛京河科学技术研究院有限公司 | 一种抗浪涌能力增强型的4H-SiC肖特基二极管及其制备方法 |
CN112186032A (zh) * | 2020-10-20 | 2021-01-05 | 西安电子科技大学 | 一种带场板结构的氧化镓结势垒肖特基二极管 |
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2021
- 2021-06-09 CN CN202110645737.9A patent/CN113555446B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09191109A (ja) * | 1995-11-06 | 1997-07-22 | Toshiba Corp | 半導体装置 |
JP2004327824A (ja) * | 2003-04-25 | 2004-11-18 | National Institute Of Advanced Industrial & Technology | 半導体装置 |
JP2005327912A (ja) * | 2004-05-14 | 2005-11-24 | Toshiba Corp | 半導体装置 |
JP2013012568A (ja) * | 2011-06-29 | 2013-01-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
CN106298974A (zh) * | 2015-05-22 | 2017-01-04 | 朱江 | 一种半导体结装置 |
CN109449085A (zh) * | 2018-09-12 | 2019-03-08 | 秦皇岛京河科学技术研究院有限公司 | 一种抗浪涌能力增强型的4H-SiC肖特基二极管及其制备方法 |
CN112186032A (zh) * | 2020-10-20 | 2021-01-05 | 西安电子科技大学 | 一种带场板结构的氧化镓结势垒肖特基二极管 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114525585A (zh) * | 2022-01-05 | 2022-05-24 | 西安电子科技大学 | 采用预铺Ga层在金刚石上外延β-Ga2O3薄膜的制备方法及结构 |
CN115799311A (zh) * | 2023-01-31 | 2023-03-14 | 深圳市威兆半导体股份有限公司 | 高压碳化硅功率器件终端及其制造方法 |
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Effective date of registration: 20220214 Address after: 311400 room 706, building 23, No. 68 Jiangnan Road, Chunjiang street, Fuyang District, Hangzhou City, Zhejiang Province Applicant after: Zhejiang Xinke Semiconductor Co.,Ltd. Address before: 311421 room 908, building 23, No. 68 Jiangnan Road, Chunjiang street, Fuyang District, Hangzhou City, Zhejiang Province Applicant before: Zhejiang Xinguo Semiconductor Co.,Ltd. |
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Denomination of invention: A Ga2O3Schottky diode based on diamond terminal structure and its fabrication method Granted publication date: 20230811 Pledgee: Bank of Jiangsu Limited by Share Ltd. Hangzhou branch Pledgor: Zhejiang Xinke Semiconductor Co.,Ltd. Registration number: Y2024980027010 |
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