CN113517219A - Method for preventing metal corrosion after metal etching - Google Patents
Method for preventing metal corrosion after metal etching Download PDFInfo
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- CN113517219A CN113517219A CN202010276306.5A CN202010276306A CN113517219A CN 113517219 A CN113517219 A CN 113517219A CN 202010276306 A CN202010276306 A CN 202010276306A CN 113517219 A CN113517219 A CN 113517219A
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- oxide film
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- 239000002184 metal Substances 0.000 title claims abstract description 90
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000005530 etching Methods 0.000 title claims abstract description 36
- 238000005260 corrosion Methods 0.000 title claims abstract description 17
- 230000007797 corrosion Effects 0.000 title claims abstract description 17
- 239000000460 chlorine Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 21
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000004380 ashing Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910015844 BCl3 Inorganic materials 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a method for preventing metal corrosion after metal etching, which comprises the following steps: providing a substrate, wherein a metal layer is arranged on one side surface of the substrate; etching the metal layer; and forming an oxide film on the metal surface. In the present disclosure, after metal etching, the oxide film formed on the metal surface can block the reaction of water vapor in the atmosphere with the chlorine component remaining on the metal surface and inside the metal surface, thereby preventing the occurrence of metal corrosion after metal etching.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, in particular to a method for preventing metal corrosion after metal etching.
Background
In order to prevent corrosion of metal after metal (e.g., aluminum) etching process in semiconductor manufacturing process, water vapor (H) must be used in a stripping process chamber in the same equipment system2O gas) to remove chlorine (Cl) components on the surface of a metal such as aluminum. However, after the metal etching and wet removal processes, if a problem such as a device failure occurs, the wafer needs to be kept in a factory for a certain period of time (generally 72 hours), and the Cl component remaining on the wafer reacts with water vapor existing in the factory atmosphere, thereby corroding the metal. The problem to be solved by those skilled in the art is how to prevent the Cl component remaining after the metal etching from corroding the metal.
Disclosure of Invention
The present disclosure addresses, at least to some extent, the above-mentioned technical problems in the related art. To this end, the present disclosure proposes a method for preventing metal ion migration, after metal etching, depositing silicon dioxide (SiO) on the metal surface2) A film; the formed oxide film can prevent the reaction of water vapor in the atmosphere and Cl components remained on the surface and in the metal, and prevent the metal corrosion.
In order to achieve the above object, one aspect of the present disclosure provides a method for preventing corrosion of a metal after etching the metal, including:
providing a substrate, wherein a metal layer is arranged on one side surface of the substrate;
etching the metal layer; and
and forming an oxide film on the surface of the metal.
According to another aspect of the present disclosure, there is provided a method for manufacturing a semiconductor device, the method comprising the step of preventing corrosion of a metal after etching the metal as described in any one of the above.
The present disclosure has the following beneficial effects: in order to prevent a wafer from standing by in a factory for a long time (generally 72 hours) after a metal etching process is performed, a metal reacts with water vapor in the factory atmosphere to cause corrosion, and Silane (SiH) is used in a stripping chamber4) Gas and oxygen(O2) Plasma reaction is generated to deposit and form silicon dioxide (SiO) on the surface of the metal2) A film; the formed oxide film can prevent the reaction of water vapor in the atmosphere and Cl components remained on the surface and in the metal, and prevent the metal corrosion.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present disclosure, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 shows a schematic structural view of a substrate and a pre-etched pattern on the substrate according to one embodiment of the present disclosure;
FIG. 2 is a schematic diagram showing the structure of FIG. 1 after etching of a metal layer thereon;
FIG. 3 is a schematic view of the structure of FIG. 2 after ashing and removal of chlorine species from the metal surface;
fig. 4 is a schematic view showing a structure in which an oxide film is formed on the surface of the metal on the structure shown in fig. 3.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
The metallic aluminum is the most commonly used wire material in semiconductor preparation, and has the advantages of low resistance, easy deposition and etching and the like. Aluminum etching typically employs a chlorine-based gas with halide addition, most commonly BCl3. Because the surface of the aluminum is easily oxidized to generate aluminum oxide at normal temperature, the aluminum oxide hinders the normal etching, and BCl3Can reduce the natural oxide layer to ensure the etching, and BCl3And the catalyst is easy to react with oxygen and water, and can absorb water vapor and oxygen in the reaction cavity, thereby reducing the generation rate of the aluminum oxide.
After etching of aluminum, water vapor (H) must be used in the stripping chamber of the same equipment system to prevent corrosion of the aluminum2O gas) to remove chlorine (Cl) components on the surface of the metallic aluminum. However, after the aluminum etching and wet removal processes, if a problem such as a device failure occurs, the wafer needs to stand by in the factory for a certain period of time (generally 72 hours), and the Cl component remaining on the wafer reacts with the water vapor existing in the factory atmosphere, thereby corroding the aluminum metal.
One embodiment of the present disclosure provides a method for preventing metal corrosion after metal etching, including:
a: referring to fig. 1, a substrate 10 is provided, and a metal layer 20 is formed on a surface of the substrate 10 by a Physical Vapor Deposition (PVD) process, a CVD process, or other suitable processes.
A photoresist layer 30 having a pre-etched pattern is formed on a surface of the metal layer 20 facing away from the substrate 10 by using a deposition (e.g., Chemical Vapor Deposition (CVD) process or spin-on coating (spin-on coating) process), a photolithography process, and an etching (e.g., dry etching or wet etching) process.
The base 10 may be, for example, a bulk Silicon substrate, a Silicon-On-Insulator (SOI) substrate, a Germanium-On-Insulator (GOI) substrate, a Silicon Germanium substrate, a group III-V compound semiconductor substrate or an epitaxial thin film substrate obtained by performing Selective Epitaxial Growth (SEG), or may be a dielectric layer material On the substrate, such as Silicon dioxide or other low dielectric constant material, and the like, without being limited thereto.
The material of the metal layer 20 may be aluminum.
b: referring to fig. 2, the metal layer 20 is etched by using the photoresist layer 30 as an etching mask to form a desired pattern of the metal layer 20. After the metal layer 20 is etched, a large amount of chlorine component is present on the metal surface, and the chlorine component easily reacts with water vapor present in the factory atmosphere, thereby corroding the metal.
An ashing process may then be used to remove the remaining photoresist layer 30. A specific ashing process is a plasma reaction with the remaining photoresist layer 30 using oxygen and nitrogen.
Alternatively, after etching the metal layer 20 to expose the substrate 10, the over-etching of the substrate 10 may be continued.
As shown in fig. 3, in some embodiments, after the metal layer 20 is etched, a large amount of chlorine on the metal surface may be removed to reduce the risk of metal corrosion. Specifically, the removing chlorine on the etched metal surface of the metal layer 20 includes: using water vapour (H)2O gas) to form a plasma to remove chlorine from the metal surface.
Wherein the metal may be aluminum.
c: referring to fig. 4, an oxide film 40 is formed on the metal surface by a deposition (e.g., Chemical Vapor Deposition (CVD)) process.
Wherein the removing of the remaining photoresist layer 30, theRemoving chlorine on the metal surface after metal etching and the process for forming the oxide film 40 on the metal surface are carried out in the same stripping chamber; using Silane (SiH)4) Gas and oxygen (O)2) Plasma reaction of (2) to deposit silicon dioxide (SiO) on the metal surface2) A film; the metal may be aluminum (Al).
Specifically, Silane (SiH) is introduced into a stripping chamber installed in an Al etching system4) Gas and oxygen (O)2) After the power is turned on, silicon dioxide (SiO)2) Film deposition onto Al surface to form silicon dioxide (SiO)2) And a film for preventing the Al from being corroded by water vapor in the atmosphere by blocking the reaction of the water vapor with Cl components remained on the surface and in the Al.
According to another aspect of the disclosure, the disclosure provides a method for manufacturing a semiconductor device, which includes a method for preventing metal corrosion after metal etching as described above.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.
Claims (10)
1. A method for preventing metal corrosion after metal etching is characterized by comprising the following steps:
providing a substrate, wherein a metal layer is arranged on one side surface of the substrate;
etching the metal layer; and
and forming an oxide film on the surface of the metal.
2. The method of claim 1, wherein said forming an oxide film on said metal surface comprises: using Silane (SiH)4) Gas and oxygen (O)2) Plasma reaction of (2) to deposit silicon dioxide (SiO) on the metal surface2) And (3) a membrane.
3. The method of claim 1, wherein the metal layer is aluminum.
4. The method as claimed in claim 1, characterized in that a photoresist layer is applied to the surface of the metal layer facing away from the substrate, and a predetermined pattern is etched in the surface of the metal layer by means of a photolithography process.
5. The method of claim 4, wherein the remaining photoresist layer is removed by an ashing process.
6. The method of claim 5, wherein the ashing process is plasma reacted with the remaining photoresist layer using oxygen and nitrogen.
7. The method of claim 5, further comprising the step of removing chlorine (Cl) components of the metal surface after the etching of the metal layer after removing the remaining photoresist layer and before forming an oxide film on the metal surface.
8. The method of claim 7, wherein the removing chlorine from the metal surface after the metal layer is etched comprises: using water vapour (H)2O gas) to form a plasma to remove chlorine from the metal surface.
9. The method according to claim 7, wherein the removing of the remaining photoresist layer, the removing of the chlorine component of the metal surface after the etching of the metal layer, and the forming of the oxide film on the metal surface are performed in the same stripping chamber.
10. A method for manufacturing a semiconductor device, comprising the step of preventing corrosion of a metal after etching the metal according to any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010276306.5A CN113517219A (en) | 2020-04-09 | 2020-04-09 | Method for preventing metal corrosion after metal etching |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010276306.5A CN113517219A (en) | 2020-04-09 | 2020-04-09 | Method for preventing metal corrosion after metal etching |
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| Publication Number | Publication Date |
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| CN113517219A true CN113517219A (en) | 2021-10-19 |
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| CN202010276306.5A Pending CN113517219A (en) | 2020-04-09 | 2020-04-09 | Method for preventing metal corrosion after metal etching |
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|---|---|---|---|---|
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2020
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| KR19980066465A (en) * | 1997-01-24 | 1998-10-15 | 문정환 | Wiring Formation Method of Semiconductor Device |
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