CN103474390A - Aluminum metal wire making method - Google Patents
Aluminum metal wire making method Download PDFInfo
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- CN103474390A CN103474390A CN2012101866036A CN201210186603A CN103474390A CN 103474390 A CN103474390 A CN 103474390A CN 2012101866036 A CN2012101866036 A CN 2012101866036A CN 201210186603 A CN201210186603 A CN 201210186603A CN 103474390 A CN103474390 A CN 103474390A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
An aluminum metal wire making method comprises an adhesive layer deposition process, an aluminum metal layer deposition process, an anti-reflection film deposition process, an aluminum metal wire etching process and a dielectric layer deposition process. The adhesive layer deposition process includes the steps of depositing a titanium layer on a substrate through an ionized metal process and applying a direction control electric field on a deposition surface during the deposition process to make deposition directions of crystalline grains in the titanium layer consistent. The dielectric layer deposition process adopts a staged plasma enhancing process. The forming quality of aluminum metal wires is improved by improving the deposition density and direction of the titanium layer and reducing the deposition stress of a dielectric layer.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of manufacture method of aluminum metal line.
Background technology
In integrated circuit (integrated circuit, IC) is manufactured, the inner metallic film that adopts of integrated circuit (IC) chip goes between conduction current, and the metallic film lead-in wire of this conduction current is called interconnection line.Aluminium has the low-resistivity of 2.65u Ω-cm when 20 ° of C, but slightly higher than the resistivity of gold, silver; Yet silver is corrosion easily, and high diffusivity is arranged in silicon and silicon dioxide, limited silver for the integrated circuit manufacture; Gold and silver are than aluminium costliness, and the tack on oxide-film is bad; Aluminium is easy to and the silica reaction, adds the thermosetting aluminium oxide, and this has promoted adhering between silica and aluminium, and aluminium can be deposited on silicon chip easily.Reason based on above, in the manufacture of integrated circuit (IC)-components, uses aluminium as the interconnection line between each device usually.
Fig. 1 forms the method flow diagram of aluminum metal lines in prior art, the cross-sectional view that Fig. 2 to Fig. 3 is the flow process of method shown in Fig. 1, the method of the formation aluminum interconnecting construction of prior art is: with reference to figure 2, S1: adhesive layer depositing operation: on substrate 110, deposition forms adhesive layer 120, its composite construction that is titanium layer, titanium nitride layer or titanium layer and titanium nitride layer; S2: aluminum metal layer depositing operation: on adhesive layer 120, deposition forms aluminium lamination 130; S3: anti-reflective film depositing operation: on aluminium lamination 130, deposition forms anti-reflecting layer 140, and this anti-reflecting layer 140 is also the composite construction of titanium layer, titanium nitride layer or titanium layer and titanium nitride layer.
With reference to figure 3, S4: metal wire etching technics: carry out photoetching on barrier layer, described upper strata 140, form the pattern (not shown) on barrier layer, upper strata 140, carry out afterwards etching technics, remove unnecessary adhesive layer 120, aluminium lamination 130 and anti-reflecting layer 140, form aluminum interconnecting 131.S5: dielectric layer depositing operation: at surface deposition one deck dielectric layer 150, this dielectric layer 150 is silicon oxide layer.
When yet this metal wire manufacture craft is used in 0.18um, 0.13um or less live width technique, can bring following problem, due to the live width of aluminum steel itself and spacing each other more and more less, after causing the dielectric layer deposition, rough phenomenon appears in the aluminum metal line, after photoetching forms metal wire, wherein the crystal grain of metallic aluminium becomes large.The crystal grain of this increase easily causes the deformation of metal wire, makes metal wire resistance abnormal, when serious, can cause the metal connecting line short circuit.
Therefore be necessary existing metal wire manufacture craft is proposed to improve, to overcome weak point of the prior art.
Summary of the invention
In view of this, the present invention proposes a kind of manufacture method of aluminum metal lines, this manufacture method is by settled density and the direction of improving adhesive layer, and the stress while simultaneously reducing the dielectric layer deposition, reach the moulding quality of improving aluminum metal lines.
The manufacture method of a kind of aluminum metal lines proposed according to purpose of the present invention, comprise adhesive layer depositing operation, aluminum metal layer depositing operation, anti-reflective film depositing operation, aluminum metal lines etching technics and dielectric layer depositing operation, described adhesive layer depositing operation comprises with ionized metal technique deposit titanium layer on substrate, and in deposition process, deposition surface is applied to a direction and control electric field, make the deposition direction of titanium layer crystal grain consistent.
Preferably, the parameter of described ionized metal technique comprises: pressure 10 millitorrs-30 millitorr, 5500 watts to 6500 watts of DC electric powers, argon gas ion gas flow 30sccm-40sccm, temperature 30 degree-100 degree.
Preferably, the direction of an electric field that described direction is controlled electric field is vertical direction, makes described titanium layer crystal grain be the vertical bar shape and arranges.
Preferably, described adhesive layer depositing operation further is included in the technique for preparing titanium nitride on this titanium layer, after ionized metal process deposits titanium layer, utilizes physical gas-phase deposition or chemical vapor deposition method to make described titanium nitride layer on this titanium layer.
Preferably, described aluminum metal layer depositing operation adopts physical gas-phase deposition to make.
Preferably, described anti-reflecting layer depositing operation adopts physical gas-phase deposition to make.
Preferably, described dielectric deposition process adopts plasma Enhancement Method stage by stage, deposition layer of silicon dioxide layer on above-mentioned aluminum metal lines.
Preferably, described plasma Enhancement Method stage by stage comprises: the filling stage of carrying out the dielectric layer deposition with the first plasma frequency-converter power, with relative the first plasma frequency-converter power, the second higher plasma frequency-converter power carries out the covering stage of dielectric layer deposition, described the first plasma frequency-converter power meets dielectric layer when deposition, and the crystal grain that the lateral stress on the aluminum metal lines sidewall is not enough to destroy on this aluminum metal lines is arranged.
Preferably, described the first plasma frequency-converter power is 450 watts-500 watts.
Preferably, described the second plasma frequency-converter power is 600 watts-700 watts.
Above-mentioned manufacture method, by when depositing titanium layer, is used ionized metal technique to coordinate the external control electric field, controls deposition direction and the settled density of titanium crystal grain; By when the dielectric layer deposition, use depositing operation stage by stage to select different deposition plasma frequency-converter powers for the different depositional phases respectively, the stress of dielectric layer in deposition process is reduced to and be not enough to destroy aluminum metal lines, thereby improved the moulding quality of aluminum metal lines.
The accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below will the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 forms the method flow diagram of aluminum metal lines in prior art;
The cross-section structure signal that Fig. 2 to Fig. 3 is the flow process of method shown in Fig. 1;
The aluminum metal lines manufacture method flow chart that Fig. 4 is the embodiment of the present invention.
Embodiment
As described in the background art, in existing aluminum metal lines manufacture craft, easily occur that aluminum metal layer is after etching, occur that aluminium grain becomes deformation large, the mobile aluminum metal lines caused, thereby cause the electrical property of device to go wrong.
Study discovery through the present inventor, the main reason that the problems referred to above occur has two: the first, when the Titanium of deposition of aluminum metal lower layer adhesive layer, the physical vapor deposition (PVD) method that prior art is used, the Titanium crystal grain that deposition obtains by this method, arrange each other more open, and embody randomness on direction, the degree of adhesion of the metallic aluminium crystal grain on so easy reduction upper strata.The second, after the aluminum metal etching during dielectric layer deposition, what prior art was used is plasma-enhanced process, and in order to guarantee the deposition rate of dielectric film, often apply powerful plasma frequency-converter power, in this case, dielectric film when the metal aluminum steel is filled, the easy stress of overheap, thus cause metallic aluminium crystal grain to be extruded distortion.
Therefore, if can increase the arranging density of titanium crystal grain, or reduce the effect of stress of dielectric layer to the metal aluminum steel, or both combine by this, can improve the forming quality of aluminum metal lines.
In view of this, the present invention proposes a kind of manufacture method of aluminum metal lines, this manufacture method is deposited titanium with ionized metal technique, and in deposition process, the ion titanium is applied to a direction control electric field, after titanium metal ions, become the charged particle of non-neutral, externally control under the effect of electric field, titanium ion moves in the same direction, makes the crystal grain formed have more directivity.More specifically, if the vertical direction that external electrical field is depositional plane, titanium crystal grain can become the vertical bar shape to arrange, and so makes the density on depositional plane of titanium crystal grain larger, arranges compacter.Deposit the titanium layer obtained in this mode, during as the adhesive layer of aluminum metal, the arranging of aluminum metal crystal grain that can make to be deposited on this adhesive layer also has more directivity and compacter, thereby greatly improves after this layer of aluminum metal etching the stability that forms aluminum steel.
On the other hand, during dielectric layer deposition, according to the deposit properties of different phase, adjust the plasma frequency-converter power in plasma-enhanced process on aluminum metal lines.Due at the deposition initial stage, it is the filling stage of dielectric layer to groove between aluminum metal lines, the deposition stress of dielectric layer is horizontal extruding to the effect of aluminum metal lines, if, now at the unequal power distribution of certain aluminum metal lines both sides, just easily occur that aluminum metal lines is by the stress compressional deformation.And in the deposition later stage, i.e. the covering stage of dielectric layer to aluminum metal lines, now dielectric layer is almost to the lateral stress of aluminum metal lines, so the deposition in this stage does not impact aluminum metal lines.According to above-mentioned characteristic, the present invention proposes a kind of plasma enhanced process stage by stage, fill the stage at the dielectric of first stage, with lower plasma frequency-converter power, deposited, with uniformity and the minimizing stress that increases deposition; The dielectric of second stage covers the stage, adopts higher plasma frequency-converter power of relative first stage to be deposited, to increase the deposition rate of dielectric layer.Thus, can guarantee the efficiency of dielectric layer deposition, reduce again the impact of stress on aluminum metal lines in the deposition process.In conjunction with above-mentioned titanium deposition process, can make the making quality of aluminum metal lines further promote, substantially stopped the deformation problems of aluminum metal lines.
Below will to technical scheme of the present invention, be clearly and completely described by embodiment.Obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making under the creative work prerequisite the every other embodiment obtained, belong to the scope of protection of the invention.
Refer to Fig. 4, Fig. 4 is the schematic flow sheet of aluminum metal lines manufacture craft in the present embodiment.As shown in the figure, aluminum metal lines manufacture craft of the present invention comprises step:
S11: with ionized metal process deposits titanium, and deposition surface is applied to a direction control electric field on substrate, make the deposition direction of titanium crystal grain consistent.This titanium coating is as the part of adhesive layer or the adhesive layer of follow-up aluminum metal layer.
This ionized metal technique is carried out in a deposition chambers, and described deposition chambers can comprise titanium target plate, electric slurry source, heater, pair of electrodes and for the fixing wafer clamp of wafer.During deposition, adopt argon gas (Ar) ion to accelerate to the titanium target plate, this titanium target plate is arranged at the top for the treatment of deposition substrate, under the electric field that argon gas ion provides at electrode, with enough speed accelerating impact titanium target surfaces, makes the titanium atom of titanium target be shelled out the formation sputter.When titanium atom leaves target plate, titanium atom can be starched gas ionization by electricity, then deposits on substrate surface.Different from traditional ionized metal technique, when titanium ion deposits to substrate surface, be subject to the impact of an external control electric field, titanium ion is carried out to rule by direction of an electric field and arrange.One, preferably in execution mode, this electric field is such as the direction that is the vertical deposition face, and the crystal grain that now titanium ion forms can become the vertical bar shape, and the long axis vertical direction of vertical bar shape is arranged.Thus, it is more tiny that titanium crystal grain seems on depositional plane, thereby this titanium layer gathers and will be increased in the deposition of substrate surface, and the compactedness of titanium intergranule and directivity original physical gas-phase deposite method of comparing, had significantly and improved.
In above-mentioned ionized metal technique, the gas flow of argon gas ion is 20sccm-60sccm in one embodiment, is 30sccm-40sccm in another embodiment.Yet should be appreciated that this argon gas ion also can be set as other gas flow arbitrarily, as long as meet, can sputter enough titanium atoms from the titanium target plate.
In above-mentioned ionized metal technique, the pressure in deposition chambers is not 5 millitorrs-50 millitorr in one embodiment, and in another embodiment, this pressure is 10 millitorrs-30 millitorrs.Yet the pressure that should be appreciated that this deposition chambers also can be set as other arbitrary value, as long as in application-specific, this pressure can make in ionized metal technique substrate surface deposit desired thickness and in fact uniformly titanium layer get final product.
In above-mentioned ionized metal technique, described electricity slurry is once-through type electricity slurry, and the DC electric power of lighting this once-through type electricity slurry is 4000 watts to 7000 watts in one embodiment, and in another embodiment, this DC electric power is 5500 watts to 6500 watts.Yet should be appreciated that this DC electric power can also be set as other arbitrary value, as long as meet, can light abundant electricity slurry.
In above-mentioned ionization technique, the temperature in described deposition chambers is 20 degree-200 degree in one embodiment, can be 30 degree-100 degree in another embodiment.Yet the temperature that should be appreciated that this deposition chambers can also be set as other arbitrary value, as long as under particular demands, this temperature can make in ionized metal technique substrate surface deposit desired thickness and in fact uniformly titanium layer get final product.
S12: adhesive layer be titanium layer in the composite construction of titanium nitride layer, after having deposited titanium layer, also comprise the technique of depositing titanium nitride.This depositing titanium nitride technique can be physical vapor deposition (PVD) in one embodiment, can be chemical vapor deposition (CVD) in another embodiment, can certainly be other depositional mode arbitrarily.It is pointed out that because adhesive layer can be independent titanium layer, so this step S12 is a kind of optional embodiment, rather than necessary.
S21: the aluminum metal depositing operation adopts physical vapour deposition (PVD) on above-mentioned adhesive layer.
S31: the anti-reflecting layer depositing operation adopts physical vapour deposition (PVD) or chemical gaseous phase depositing process to deposit one deck anti-reflecting layer on above-mentioned aluminum metal layer.In a kind of embodiment, this anti-reflecting layer is titanium nitride layer.This anti-reflecting layer can, when aluminum metal layer is carried out to the metal wire etching, avoid being damaged to aluminum metal lines.
S41: aluminum metal lines etching technics: this aluminum metal lines etching technics adopts dry etching method, in one embodiment, and with Cl
2and BCl
3for etching gas, above-mentioned anti-reflecting layer, aluminum metal layer and adhesive layer are carried out to etching, etch the aluminum metal lines of required figure, wherein anti-reflecting layer and the adhesive layer bar after etching is wide should be consistent with aluminum metal lines.
Because above-mentioned step S21, S31, S41 are existing maturation process, and irrelevant with inventive concept of the present invention, just as step necessary in the aluminum metal lines manufacture craft, described, therefore for the detailed process of those steps, do not do concrete expansion.Yet should be understood that; in prior art; there is the multiple manufacture craft that can substitute above-mentioned several steps; under thought prerequisite of the present invention; can be applied in concrete steps of the present invention, so the protection range that the present invention advocates should all be included the method for all applicable those steps.
S51: dielectric layer depositing operation.This dielectric layer depositing operation adopts plasma Enhancement Method stage by stage, deposition layer of silicon dioxide layer on above-mentioned aluminum metal lines.Described plasma Enhancement Method stage by stage refers to, in the filling stage of dielectric layer deposition process, adopts first a relatively low plasma frequency-converter power to be deposited dielectric layer.This first plasma frequency-converter power should meet dielectric layer when deposition, and the crystal grain that the lateral stress on the aluminum metal lines sidewall is not enough to destroy on this aluminum metal lines is arranged.Arrived the covering of dielectric layer deposition process during the stage, can adopt the second plasma frequency-converter power that relative the first plasma frequency-converter power is higher, the deposition rate that this second plasma frequency-converter power should make the deposition rate of dielectric layer compare the filling stage significantly improves, and with this, improves the operating efficiency of whole dielectric layer depositing operation.
In one embodiment, 450 watts-500 watts of described the first plasma frequency-converter powers, described the second plasma frequency-converter power is 600 watts-700 watts, and temperature during deposition is 350 degree-500 degree, and pressure is 5 holders-9 holders.Now dielectric layer is less than 2E8Dynes/cm at the deposition stress in the stage of filling
2, for the aluminum metal lines of 0.18um or 0.13um live width, this stress intensity is within born scope.And the second plasma frequency-converter power is compared with the first plasma frequency-converter power, the dielectric layer deposition velocity significantly improves.
In other embodiments, this first plasma frequency-converter power and the second plasma frequency-converter power can also be set as other arbitrary value, as long as meet the not oppressed distortion of aluminum metal lines under corresponding live width technique.
It should be noted that step S11 and S51, is to have improved the moulding quality of aluminum metal lines with two kinds of different means, when both combine use, can substantially stop the deformation problems that aluminum metal lines easily occurs in manufacturing process.Yet only implement wherein any one means, also can play the raising to the aluminum metal lines quality.
In sum, the present invention proposes a kind of manufacture method of aluminum metal lines, this manufacture method, by when depositing titanium layer, is used ionized metal technique to coordinate the external control electric field, controls deposition direction and the settled density of titanium crystal grain; By when the dielectric layer deposition, use depositing operation stage by stage to select different deposition plasma frequency-converter powers for the different depositional phases respectively, the stress of dielectric layer in deposition process is reduced to and be not enough to destroy aluminum metal lines, thereby improved the moulding quality of aluminum metal lines.
To the above-mentioned explanation of the disclosed embodiments, make professional and technical personnel in the field can realize or use the present invention.Multiple modification to these embodiment will be apparent for those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from the spirit or scope of the present invention, realization in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. the manufacture method of an aluminum metal lines, comprise adhesive layer depositing operation, aluminum metal layer depositing operation, anti-reflective film depositing operation, aluminum metal lines etching technics and dielectric layer depositing operation, it is characterized in that: described adhesive layer depositing operation comprises with ionized metal technique deposit titanium layer on substrate, and in deposition process, deposition surface is applied to a direction and control electric field, make the deposition direction of titanium layer crystal grain consistent.
2. aluminum metal lines manufacture method as claimed in claim 1, it is characterized in that: the parameter of described ionized metal technique comprises: pressure 10 millitorrs-30 millitorr, 5500 watts to 6500 watts of DC electric powers, argon gas ion gas flow 30sccm-40sccm, temperature 30 degree-100 degree.
3. aluminum metal lines manufacture method as claimed in claim 1 is characterized in that: the direction of an electric field that described direction is controlled electric field is vertical direction, makes described titanium layer crystal grain be the vertical bar shape and arranges.
4. aluminum metal lines manufacture method as claimed in claim 1, it is characterized in that: described adhesive layer depositing operation further is included in the technique for preparing titanium nitride on this titanium layer, after ionized metal process deposits titanium layer, utilize physical gas-phase deposition or chemical vapor deposition method to make described titanium nitride layer on this titanium layer.
5. aluminum metal lines manufacture method as claimed in claim 1, is characterized in that: the making of described aluminum metal layer depositing operation employing physical gas-phase deposition.
6. aluminum metal lines manufacture method as claimed in claim 1, is characterized in that: the making of described anti-reflecting layer depositing operation employing physical gas-phase deposition.
7. aluminum metal lines manufacture method as claimed in claim 1, is characterized in that: described dielectric deposition process employing plasma Enhancement Method stage by stage, deposition layer of silicon dioxide layer on above-mentioned aluminum metal lines.
8. aluminum metal lines manufacture method as claimed in claim 7, it is characterized in that: described plasma Enhancement Method stage by stage comprises: the filling stage of carrying out the dielectric layer deposition with the first plasma frequency-converter power, with relative the first plasma frequency-converter power, the second higher plasma frequency-converter power carries out the covering stage of dielectric layer deposition, described the first plasma frequency-converter power meets dielectric layer when deposition, and the crystal grain that the lateral stress on the aluminum metal lines sidewall is not enough to destroy on this aluminum metal lines is arranged.
9. aluminum metal lines manufacture method as claimed in claim 8, it is characterized in that: described the first plasma frequency-converter power is 450 watts-500 watts.
10. aluminum metal lines manufacture method as claimed in claim 8, it is characterized in that: described the second plasma frequency-converter power is 600 watts-700 watts.
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| CN201210186603.6A CN103474390B (en) | 2012-06-07 | 2012-06-07 | A kind of manufacture method of aluminum metal lines |
| PCT/CN2013/076516 WO2013182010A1 (en) | 2012-06-07 | 2013-05-30 | Aluminum metal wire manufacturing method |
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| CN201210186603.6A CN103474390B (en) | 2012-06-07 | 2012-06-07 | A kind of manufacture method of aluminum metal lines |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108389832A (en) * | 2018-02-07 | 2018-08-10 | 上海华虹宏力半导体制造有限公司 | The method of metallic aluminium filling perforation |
| CN110137135A (en) * | 2019-05-30 | 2019-08-16 | 上海华虹宏力半导体制造有限公司 | The method for forming conductive layer |
| CN113517219A (en) * | 2020-04-09 | 2021-10-19 | 中国科学院微电子研究所 | Method for preventing metal corrosion after metal etching |
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| CN1381880A (en) * | 2001-04-13 | 2002-11-27 | 华邦电子股份有限公司 | Outline-control method for etching metal layer |
| CN101335260A (en) * | 2007-06-29 | 2008-12-31 | 上海宏力半导体制造有限公司 | Aluminum interconnecting construction and making method thereof |
| CN101924060A (en) * | 2009-06-11 | 2010-12-22 | 上海华虹Nec电子有限公司 | Method for controlling height of holes in dielectric layers between interconnects |
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| CN108389832A (en) * | 2018-02-07 | 2018-08-10 | 上海华虹宏力半导体制造有限公司 | The method of metallic aluminium filling perforation |
| CN108389832B (en) * | 2018-02-07 | 2020-06-09 | 上海华虹宏力半导体制造有限公司 | Method for filling hole with metallic aluminum |
| CN110137135A (en) * | 2019-05-30 | 2019-08-16 | 上海华虹宏力半导体制造有限公司 | The method for forming conductive layer |
| CN113517219A (en) * | 2020-04-09 | 2021-10-19 | 中国科学院微电子研究所 | Method for preventing metal corrosion after metal etching |
Also Published As
| Publication number | Publication date |
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| WO2013182010A1 (en) | 2013-12-12 |
| CN103474390B (en) | 2015-09-09 |
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