CN108389832A - The method of metallic aluminium filling perforation - Google Patents
The method of metallic aluminium filling perforation Download PDFInfo
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- CN108389832A CN108389832A CN201810120404.2A CN201810120404A CN108389832A CN 108389832 A CN108389832 A CN 108389832A CN 201810120404 A CN201810120404 A CN 201810120404A CN 108389832 A CN108389832 A CN 108389832A
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- aluminium
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- filling perforation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of methods of metallic aluminium filling perforation, including step：The semiconductor substrate for being formed with interlayer film is provided, through-hole is formed in interlayer film；The first metallic aluminium seed layer is formed using sputtering technology and according to the process conditions for forming aluminium seed crystal；The second metallic aluminum is formed using sputtering technology and under the second process conditions and by through-hole fill without cavity；The temperature of second process conditions is more than the temperature for the technique for forming aluminium seed crystal, and the radio-frequency power of the second process conditions is less than the radio-frequency power for the technique for forming aluminium seed crystal；Semiconductor substrate is cooled down；Third metallic aluminum is formed using sputtering technology and under third process conditions and is superimposed the total metallic aluminum for forming required thickness；The temperature of third process conditions is equal to the temperature of the technique of the second process conditions, and the radio-frequency power of third process conditions is more than the radio-frequency power of the second process conditions.The present invention can improve the step coverage of metallic aluminium, improve the electric property and reliability of metallic aluminium.
Description
Technical field
The present invention relates to a kind of manufacturing methods of semiconductor integrated circuit, more particularly to a kind of side of metallic aluminium filling perforation
Method.
Background technology
In power discrete device and power integrated circuit, usual power device is needed through high current, so needing thickness
Aluminium technique, metallic aluminium process for filling hole are widely used.
The metallic aluminium deposited with physical vapour deposition (PVD) (PVD) method is compared with tungsten plug, and resistivity is low, and the RC retardation ratio of circuit is small,
And the integrated process of metallic aluminium is simple, and at low cost, metal can be contacted and once be completed with metal interconnection by metallic aluminium, not need class
Quarter or chemical mechanical grinding (CMP) technique are returned like tungsten plug technique, saves equipment and resource.Namely when using tungsten plug technique,
It needs to form tungsten in metal contacts corresponding through-hole, quarter or CMP process is used back to remove the tungsten outside through-hole later
It removes；Metallic aluminum is being formed later, metallic aluminum graphically forms the metal interconnection structure of corresponding metal layer.And use metal
When aluminium process for filling hole, metal, which contacts corresponding through-hole, individually tungsten to be used to fill, but directly aluminium is used to fill, subsequently
Metal interconnect corresponding metal layer and also use aluminium, therefore metal can be contacted and metal interconnection is primary completes.
But the main difficulty of metallic aluminium filling perforation is that step coverage is not high, when metal aluminium film crosses over substrate surface
Step when, ideal situation can be deviateed, film is partially thin or crack and cavity occurs, and step coverage directly affects leading for metal line
Electrically, determine circuit whether efficient operation.The metal layer current loading of top layer is big, and conducting wire heat dissipation capacity is also big, if Step Coverage
Rate is low, then the current density by conducting wire is just high, conducting wire is easy for fusing；Meanwhile step coverage is low, contact resistance can become
Greatly, the delay of circuit and power consumption also can accordingly increase.Moreover, metal cladding thickness is uneven on step, electromigration easily occurs
The cavity of generation.
As shown in Figure 1, being the first pattern photo of the through-hole of the method formation of existing metallic aluminium filling perforation；Interlayer film 101
It is formed in semiconductor substrate such as surface of silicon, is formed by the through-hole 102 across interlayer film 101 in interlayer film 101, is adopted later
With the disposable deposited metal aluminium 103 of PVD, PVD generally use sputtering technologies complete the deposition of metallic aluminium.The through-hole 102 cuts open
Face structure is divided into two parts up and down, and the side of lower part is constant for the opening diameter of vertical structure and the lower part, upper part
Side is arc-shaped and the opening diameter of the upper part becomes larger.The size of through-hole 102,102 bottom of through-hole have been marked in Fig. 1
The width in portion isHighly it isThe height of the upper part of through-hole 102 isThe width of the top of through-hole 102
Degree isWhen metallic aluminium 103 deposits, the interlayer film 101 in the outside of the bottom surface of through-hole 102, side and through-hole 102
Surface growth rate it is different, wherein the growth rate in the side of through-hole 102 is minimum so that step coverage is low；In Fig. 1
It shows, the thickness of the metallic aluminium 103 formed in the bottom surface of through-hole 102 isIn the bottom surface of through-hole 102
The thickness of the metallic aluminium 103 of upper formation isThe metallic aluminium formed on the surface of the interlayer film 101 of the outside of through-hole 102
103 thickness isStep coverage is about 37%.
It, can be after the top of through-hole 102 formation metallic aluminium 103 closes up if 103 continued growth of metallic aluminium in Fig. 1
Cavity.As shown in Fig. 2, being second of pattern photo of the through-hole of the method formation of existing metallic aluminium filling perforation；Sky is shown in Fig. 2
Hole 104, this is also as caused by step coverage is low.
Invention content
The technical problem to be solved in the present invention is to provide a kind of method of metallic aluminium filling perforation, the step that can improve metallic aluminium covers
Lid rate improves the electric property and reliability of metallic aluminium.
In order to solve the above technical problems, the method for the metallic aluminium filling perforation of the present invention includes the following steps：
Step 1: providing semiconductor substrate, it is formed with interlayer film on the semiconductor substrate, the shape in the interlayer film
At the through-hole having across the interlayer film.
Step 2: forming the first metallic aluminium seed layer, institute using sputtering technology and according to the process conditions for forming aluminium seed crystal
State the first metallic aluminium seed layer directly and the bottom surface of the through-hole and the interlayer film outside side and the through-hole
Surface contacts.
Step 3: the second metallic aluminum is formed using sputtering technology and under the second process conditions, second metallic aluminium
Layer on the surface of the first metallic aluminium seed layer growth and second metallic aluminum thickness meet to the through-hole into
Row is filled without cavity；The temperature of second process conditions is more than the temperature of the technique for forming aluminium seed crystal, second work
The radio-frequency power of skill condition is less than the radio-frequency power of the technique for forming aluminium seed crystal, by reducing by second process conditions
Radio-frequency power come extend metallic aluminium reflux time to increase metallic aluminium heat flow back and make metallic aluminium have the sufficient time will
The through-hole bottom fills up and is unlikely to formation cavity of closing up too early.
Step 4: carrying out cooling to the semiconductor substrate and reducing the grain size of metallic aluminium by the cooling and make
The grain size of the metallic aluminium of follow-up total metallic aluminum is all reduced, and reduces the photoetching after total metallic aluminum is formed and quarter
The difficulty of etching technique.
Step 5: continued growth forms third metallic aluminum using sputtering technology and under third process conditions；Described
The temperature of three process conditions is equal to the temperature of the technique of second process conditions, and the radio-frequency power of the third process conditions is big
In the radio-frequency power of second process conditions, the radio-frequency power by increasing the third process conditions improve sputtering rate from
And reduce the process time；The overlaying structure of total metallic aluminum includes the first metallic aluminium seed layer, second metallic aluminum
With the third metallic aluminum.
A further improvement is that further including step after step 4 and before step 5：
The second metallic aluminium seed layer, second gold medal are formed using sputtering technology and according to the process conditions for forming aluminium seed crystal
Belong to aluminium seed layer to be formed directly on second metallic aluminum, the follow-up third metallic aluminum is formed directly into described second
On metallic aluminium seed layer, the characteristics of small using the crystal grain of the second metallic aluminium seed layer and continuous and good fluidity, improves gold
Belong to the filling perforation performance of aluminium.
A further improvement is that the temperature of the process conditions for forming aluminium seed crystal is 0 DEG C~50 DEG C, radio-frequency power is
10kw~20kw.
A further improvement is that the temperature of the second process conditions described in step 3 is 250 DEG C~420 DEG C, radio-frequency power
For 1kw~10kw.
A further improvement is that the temperature of third process conditions described in step 5 is 250 DEG C~420 DEG C, radio-frequency power
For 10kw~14kw.
A further improvement is that being 1 minute~10 minutes to the time of semiconductor substrate cooling in step 4.
A further improvement is that step 1 is all completed on same metallic aluminium deposition apparatus to step 5, the metal
Aluminium deposition apparatus includes：First metallic aluminium sputtering chamber, cooling chamber and the second metallic aluminium sputtering chamber.
A further improvement is that step 2 and step 3 are all completed in the first metallic aluminium sputtering chamber；Step 4 exists
It is completed in the cooling chamber；The formation process and step 5 of the second metallic aluminium seed layer are in the second metallic aluminium sputtering chamber
Middle completion.
A further improvement is that the semiconductor substrate is silicon substrate.
A further improvement is that the material of the interlayer film is oxidation film.
A further improvement is that the cross-section structure of the through-hole is divided into two parts up and down, the side of lower part is vertical junction
The structure and opening diameter of the lower part is constant, the side of upper part is arc-shaped and the opening diameter of the upper part gradually becomes
Greatly.
A further improvement is that the thickness of the first metallic aluminium seed layer isSecond metallic aluminium
The thickness of seed layer is
A further improvement is that the opening diameter of the lower part is 1 micron or more.
A further improvement is that the thickness of total metallic aluminum is 1 micron or more.
A further improvement is that the height of the lower part is less than or equal to the half of the upper Partial Height；The interlayer
The thickness of film is less than the opening diameter of the lower part.
The present invention is provided separately by the condition of the formation process to metallic aluminium, first in lower temperature and higher
Sputtering forms the second best in quality first metallic aluminium seed layer under conditions of radio-frequency power, and small in the first metallic aluminium seed layer crystal grain
And continuous, good fluidity, to which the filling perforation performance of metallic aluminium can be substantially improved；Later in higher temperature and lower radio-frequency power
Under the conditions of form the second metallic aluminum, since the radio-frequency power of the formation process of the second metallic aluminum is low, is equivalent to and extends gold
Belong to the time of the reflux of aluminium so that metallic aluminium has enough thermal energy to flow back so that aluminium has the sufficient time to fill out through-hole bottom
Completely it is unlikely to close up too early and forms cavity, so the present invention is mainly to be realized to through-hole without cavity by the second metallic aluminum
Filling, the corresponding metallic aluminium that flows back are all metallic aluminiums grown in the corresponding thermal process of reflux, include in growth
Second metallic aluminum and the first metallic aluminium seed layer before；It is cooled down later to semiconductor substrate, using cooling technique to subtract
The grain size of small metallic aluminium, this can not only be such that metal aluminium grain before cooling reduces, can also make the metallic aluminium being subsequently formed
Crystal grain can be also reduced, and finally the crystal grain of total metallic aluminum can be made relatively small, reduce follow-up photoetching, etching technics work
Skill difficulty.
Due to, the control to the good filling of through-hole and to grain size ensured before, thus it is follow-up use again compared with
High-temperature and higher radio-frequency power form third metallic aluminum and reach the required thickness of total metallic aluminum, higher radio frequency
Power can improve the growth rate of third metallic aluminum, so as to reduce the integrated artistic time.
From the foregoing, it will be observed that each step of the method for the present invention can form an organic whole, it being capable of gold by step 2 and three
Belong to good filling of the aluminium to through-hole, the cooling technique of step 4 but can guarantee the grain size of metallic aluminium, the third gold of step 5
Belong to aluminium layer and then can guarantee the whole process time, can realize and through-hole is filled without cavity, so as to improve the platform of metallic aluminium
Rank coverage rate and the electric property and reliability for improving metallic aluminium；It can reduce the process time again, to reduce cost；It also ensures
The grain size for reducing metallic aluminium, reduces the photoetching of subsequent metal aluminium, the technology difficulty of etching technics.
Description of the drawings
The present invention is described in further detail with specific implementation mode below in conjunction with the accompanying drawings：
Fig. 1 is the first the pattern photo for the through-hole that the method for existing metallic aluminium filling perforation is formed；
Fig. 2 is second of pattern photo of the through-hole that the method for existing metallic aluminium filling perforation is formed；
Fig. 3 is the flow chart of the method for metallic aluminium filling perforation of the embodiment of the present invention；
Fig. 4 is the pattern photo for the through-hole that the method for metallic aluminium filling perforation of the embodiment of the present invention is formed.
Specific implementation mode
As shown in figure 3, being the flow chart of the method for metallic aluminium filling perforation of the embodiment of the present invention；As shown in figure 4, being of the invention real
The method of the pattern photo for the through-hole 22 that the method for applying a metallic aluminium filling perforation is formed, metallic aluminium filling perforation of the embodiment of the present invention includes such as
Lower step：
Step 1: providing semiconductor substrate, it is formed with interlayer film 1 on the semiconductor substrate, in the interlayer film 1
It is formed through the through-hole 2 of the interlayer film 1.
In the embodiment of the present invention, the semiconductor substrate is silicon substrate.
Preferably, the material of the interlayer film 1 is oxidation film.
The cross-section structure of the through-hole 2 is divided into two parts up and down, and the side of lower part is vertical structure and the lower part
Opening diameter it is constant, the side of upper part is arc-shaped and the opening diameter of the upper part becomes larger.
The height of the lower part is less than or equal to the half of the upper Partial Height.
The thickness of the interlayer film 1 is less than the opening diameter of the lower part.The opening diameter of the lower part is 1 micron
More than.
Step 2: the first metallic aluminium seed layer 3a is formed using sputtering technology and according to the process conditions for forming aluminium seed crystal,
The direct bottom surfaces with the through-hole 2 of the first metallic aluminium seed layer 3a and the layer outside side and the through-hole 2
Between film 1 surface contact.
Preferably, it is described formed aluminium seed crystal process conditions temperature be 0 DEG C~50 DEG C, radio-frequency power be 10kw~
20kw.The thickness of the first metallic aluminium seed layer 3a is
Step 3: forming the second metallic aluminum 3b, second metal using sputtering technology and under the second process conditions
Aluminium layer 3b is grown on the surface of the first metallic aluminium seed layer 3a and the thickness of the second metallic aluminum 3b meets to institute
Through-hole 2 is stated fill without cavity；The temperature of second process conditions is more than the temperature of the technique for forming aluminium seed crystal, institute
The radio-frequency power for stating the second process conditions is less than the radio-frequency power of the technique for forming aluminium seed crystal, by reducing by second work
The radio-frequency power of skill condition fills to extend the time of the reflux of metallic aluminium to increase the heat reflux of metallic aluminium and metallic aluminium is made to have
2 bottom of the through-hole is filled up between timesharing and is unlikely to formation cavity of closing up too early.
Preferably, the temperature of second process conditions is 250 DEG C~420 DEG C, and radio-frequency power is 1kw~10kw.
Step 4: carrying out cooling to the semiconductor substrate and reducing the grain size of metallic aluminium by the cooling and make
The grain size of the metallic aluminium of follow-up total metallic aluminum 3 is all reduced, reduce the photoetching after total metallic aluminum 3 is formed and
The difficulty of etching technics.
Preferably, it is 1 minute~10 minutes to the time of semiconductor substrate cooling.
Step 5: continued growth forms third metallic aluminum 3c using sputtering technology and under third process conditions；It is described
The temperature of third process conditions is equal to the temperature of the technique of second process conditions, the radio-frequency power of the third process conditions
More than the radio-frequency power of second process conditions, the radio-frequency power by increasing the third process conditions improves sputtering rate
To reduce the process time；The overlaying structure of total metallic aluminum 3 includes the first metallic aluminium seed layer 3a, second metal
The aluminium layer 3b and third metallic aluminum 3c.
Preferably, the temperature of the third process conditions is 250 DEG C~420 DEG C, and radio-frequency power is 10kw~14kw.It is described
The thickness of total metallic aluminum 3 is 1 micron or more.
Further include step after step 4 and before step 5 in the embodiment of the present invention：
The second metallic aluminium seed layer, second gold medal are formed using sputtering technology and according to the process conditions for forming aluminium seed crystal
Belong to aluminium seed layer to be formed directly on the second metallic aluminum 3b, the follow-up third metallic aluminum 3c is formed directly into described
On second metallic aluminium seed layer, the characteristics of small using the crystal grain of the second metallic aluminium seed layer and continuous and good fluidity, changes
The filling perforation performance of kind metallic aluminium.The thickness of the second metallic aluminium seed layer isDue to second metallic aluminium
Seed layer crystal grain is small and continuous, good fluidity, can further substantially improve the filling perforation performance of metallic aluminium.
In the embodiment of the present invention, step 1 to step 5 is all completed on same metallic aluminium deposition apparatus, the metal
Aluminium deposition apparatus includes：First metallic aluminium sputtering chamber, cooling chamber and the second metallic aluminium sputtering chamber.
Step 2 and step 3 are all completed in the first metallic aluminium sputtering chamber；Step 4 is complete in the cooling chamber
At；The formation process and step 5 of the second metallic aluminium seed layer are completed in the second metallic aluminium sputtering chamber.
The various parameters of a specific through-hole are marked in Fig. 4, the bottom width of the through-hole 2 is 1.29 μm, under described
Partial height isThe height of the upper part isThe thickness for total metallic aluminum 3 that 2 top of the through-hole is formed
Degree is 2.29 μm, and the thickness of total metallic aluminum 3 on 1 surface of the interlayer film outside the through-hole 2 is 1.92 μm.Compare Fig. 4
With Fig. 1 it is found that present invention method realizes the good filling to the through-hole 2, there is higher step coverage,
The corresponding step coverages of Fig. 4 are about 95%.
The embodiment of the present invention is provided separately by the condition of the formation process to metallic aluminium, first in lower temperature and
Sputtering forms the second best in quality first metallic aluminium seed layer 3a under conditions of higher radio-frequency power, and in the first metallic aluminium seed crystal
Layer 3a crystal grain is small and continuous, good fluidity, to substantially improve the filling perforation performance of metallic aluminium；Later in higher temperature and relatively low
Radio-frequency power under the conditions of form the second metallic aluminum 3b, since the radio-frequency power of the formation process of the second metallic aluminum 3b is low,
It is equivalent to the time for the reflux for extending metallic aluminium so that metallic aluminium has enough thermal energy to flow back so that when aluminium has abundant
Between 2 bottom of through-hole is filled up and be unlikely to too early close up formed cavity, so the present invention mainly pass through the second metallic aluminum 3b
It realizes and through-hole 2 is filled without cavity, the corresponding metallic aluminium that flows back is all gold grown in the corresponding thermal process of reflux
Belong to aluminium, includes the second metallic aluminum 3b in growth and the first metallic aluminium seed layer 3a before；It is served as a contrast later to semiconductor
Bottom cools down, and using cooling technique to reduce the grain size of metallic aluminium, this can not only be such that metal aluminium grain before cooling reduces, also
It can make the crystal grain for the metallic aluminium being subsequently formed that can also be reduced, finally the crystal grain of total metallic aluminum 3 can be made relatively small, reduce
Follow-up photoetching, etching technics technology difficulty.
Due to, the control to the good filling of through-hole 2 and to grain size ensured before, thus it is follow-up use again compared with
High-temperature and higher radio-frequency power form third metallic aluminum 3c and reach 3 required thickness of total metallic aluminum, higher
Radio-frequency power can improve the growth rate of third metallic aluminum 3c, so as to reduce the integrated artistic time.
From the foregoing, it will be observed that each step of present invention method can form an organic whole, pass through step 2 and three
Can good filling of the metallic aluminium to through-hole 2, the cooling technique of step 4 but can guarantee the grain size of metallic aluminium, step 5
Third metallic aluminum 3c then can guarantee the whole process time, can realize and be filled without cavity to through-hole 2, so as to improve gold
Belong to the step coverage of aluminium and improves the electric property and reliability of metallic aluminium；It can reduce the process time again, to reduce cost；
Also ensuring reduces the grain size of metallic aluminium, reduces the photoetching of subsequent metal aluminium, the technology difficulty of etching technics.
Above by specific implementation mode, invention is explained in detail, but these are not constituted to the present invention's
Limitation.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these
It should be regarded as protection scope of the present invention.
Claims (15)
1. a kind of method of metallic aluminium filling perforation, which is characterized in that include the following steps：
Step 1: providing semiconductor substrate, it is formed with interlayer film on the semiconductor substrate, is formed in the interlayer film
Across the through-hole of the interlayer film；
Step 2: the first metallic aluminium seed layer is formed using sputtering technology and according to the process conditions for forming aluminium seed crystal, described the
Surface of the one metallic aluminium seed layer directly with the bottom surface and the interlayer film outside side and the through-hole of the through-hole
Contact；
Step 3: forming the second metallic aluminum using sputtering technology and under the second process conditions, second metallic aluminum exists
The thickness of growth and second metallic aluminum meets on the surface of the first metallic aluminium seed layer carries out nothing to the through-hole
Cavity filling；The temperature of second process conditions is more than the temperature of the technique for forming aluminium seed crystal, the second technique item
The radio-frequency power of part is less than the radio-frequency power of the technique for forming aluminium seed crystal, by the radio frequency for reducing by second process conditions
Power flows back to increasing the heat of metallic aluminium extending the time of the reflux of metallic aluminium and metallic aluminium is made to have the sufficient time described
Through-hole bottom fills up and is unlikely to formation cavity of closing up too early；
Step 4: carrying out cooling to the semiconductor substrate and reducing the grain size of metallic aluminium by the cooling and make follow-up
The grain size of the metallic aluminium of total metallic aluminum is all reduced, and reduces the lithography and etching work after total metallic aluminum is formed
The difficulty of skill；
Step 5: continued growth forms third metallic aluminum using sputtering technology and under third process conditions；The third work
The temperature of skill condition is equal to the temperature of the technique of second process conditions, and the radio-frequency power of the third process conditions is more than institute
The radio-frequency power for stating the second process conditions, the radio-frequency power by increasing the third process conditions improve sputtering rate to subtract
Few process time；The overlaying structure of total metallic aluminum includes the first metallic aluminium seed layer, second metallic aluminum and institute
State third metallic aluminum.
2. the method for metallic aluminium filling perforation as described in claim 1, it is characterised in that：After step 4 and before step 5
It further include step：
The second metallic aluminium seed layer, second metallic aluminium are formed using sputtering technology and according to the process conditions for forming aluminium seed crystal
Seed layer is formed directly on second metallic aluminum, and the follow-up third metallic aluminum is formed directly into second metal
On aluminium seed layer, the characteristics of small using the crystal grain of the second metallic aluminium seed layer and continuous and good fluidity, improves metallic aluminium
Filling perforation performance.
3. the method for metallic aluminium filling perforation as claimed in claim 2, it is characterised in that：The process conditions for forming aluminium seed crystal
Temperature is 0 DEG C~50 DEG C, and radio-frequency power is 10kw~20kw.
4. the method for metallic aluminium filling perforation as described in claim 1, it is characterised in that：Second process conditions described in step 3
Temperature is 250 DEG C~420 DEG C, and radio-frequency power is 1kw~10kw.
5. the method for metallic aluminium filling perforation as described in claim 1, it is characterised in that：Third process conditions described in step 5
Temperature is 250 DEG C~420 DEG C, and radio-frequency power is 10kw~14kw.
6. the method for metallic aluminium filling perforation as described in claim 1, it is characterised in that：It is cold to the semiconductor substrate in step 4
But time is 1 minute~10 minutes.
7. the method for metallic aluminium filling perforation as claimed in claim 2, it is characterised in that：Step 1 is to step 5 all in same gold
Belong to and being completed on aluminium deposition apparatus, the metallic aluminium deposition apparatus includes：First metallic aluminium sputtering chamber, cooling chamber and the second metallic aluminium
Sputtering chamber.
8. the method for metallic aluminium filling perforation as claimed in claim 7, it is characterised in that：Step 2 and step 3 are all described first
It is completed in metallic aluminium sputtering chamber；Step 4 is completed in the cooling chamber；The formation process of the second metallic aluminium seed layer and
Step 5 is completed in the second metallic aluminium sputtering chamber.
9. the method for metallic aluminium filling perforation as described in claim 1, it is characterised in that：The semiconductor substrate is silicon substrate.
10. the method for metallic aluminium filling perforation as described in claim 1, it is characterised in that：The material of the interlayer film is oxidation film.
11. the method for metallic aluminium filling perforation as described in claim 1, it is characterised in that：The cross-section structure of the through-hole is divided into
The side of lower two parts, lower part is constant for the opening diameter of vertical structure and the lower part, and the side of upper part is arc-shaped
And the opening diameter of the upper part becomes larger.
12. the method for metallic aluminium filling perforation as claimed in claim 3, it is characterised in that：The thickness of the first metallic aluminium seed layer
Degree isThe thickness of the second metallic aluminium seed layer is
13. the method for metallic aluminium filling perforation as claimed in claim 11, it is characterised in that：The opening diameter of the lower part is 1
Micron or more.
14. the method for the metallic aluminium filling perforation as described in claim 1 or 11, it is characterised in that：The thickness of total metallic aluminum
It is 1 micron or more.
15. the method for metallic aluminium filling perforation as claimed in claim 11, it is characterised in that：The height of the lower part is less than or equal to
The half of the upper Partial Height；The thickness of the interlayer film is less than the opening diameter of the lower part.
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| CN201810120404.2A CN108389832B (en) | 2018-02-07 | 2018-02-07 | Method for filling hole with metallic aluminum |
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| CN201810120404.2A CN108389832B (en) | 2018-02-07 | 2018-02-07 | Method for filling hole with metallic aluminum |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110890318A (en) * | 2018-09-11 | 2020-03-17 | 长鑫存储技术有限公司 | Contact hole filling method and structure and integrated circuit chip |
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| CN108389832B (en) | 2020-06-09 |
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