CN113451168A - Dry etching gas control system - Google Patents
Dry etching gas control system Download PDFInfo
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- CN113451168A CN113451168A CN202010291585.2A CN202010291585A CN113451168A CN 113451168 A CN113451168 A CN 113451168A CN 202010291585 A CN202010291585 A CN 202010291585A CN 113451168 A CN113451168 A CN 113451168A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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Abstract
The invention provides a dry etching gas control system which comprises an etching cavity, wherein the etching cavity is a sealed cavity, and a gas splitter disc and a wafer bearing disc are arranged in the etching cavity. The gas distribution plate is positioned at the upper part of the etching cavity; the gas distribution plate is provided with a plurality of gas inlet holes, and the density of the gas inlet holes is gradually reduced from the center to the edge of the gas distribution plate; the wafer bearing plate is positioned at the lower part of the etching cavity and is arranged below the gas distribution plate correspondingly. The distribution condition of etching gas in the etching cavity is controlled through the gas distribution plate, and the gas inlet holes in the gas distribution plate are not uniformly distributed but are gradually sparse from the center to the edge, so that the etching gas entering the etching cavity is more distributed in the center and less distributed around, and under the action of the air pumping system, the etching gas actually contacting the wafer is uniformly distributed, and the etching uniformity of the wafer is improved.
Description
Technical Field
The invention relates to the field of semiconductor preparation equipment and light emitting diode preparation equipment, relates to a dry etching gas control system, and particularly relates to a gas etching system capable of enabling etching gas to be uniformly distributed and improving etching uniformity.
Background
LEDs, i.e., light emitting diodes, emit light by energy released by recombination of electrons and holes, can efficiently convert electrical energy into light energy, have numerous advantages, and are considered as a next generation of novel solid-state light sources that enter the general illumination field.
The wafer material for manufacturing the LED chip comprises an epitaxial structure manufactured through epitaxial growth, wherein the epitaxial structure specifically comprises a first semiconductor layer, a second semiconductor layer and a light-emitting layer. In the process of manufacturing the LED chip, etching a wafer material is an indispensable important step, a specific structure is formed on the first semiconductor layer, the second semiconductor layer and the light-emitting layer through etching, and then electrodes are correspondingly arranged, so that the LED chip is obtained.
Dry etching, i.e., gas etching, is an etching method widely used in the industry. The wafer material is placed in the etching cavity, etching gas is input into the etching cavity, and the wafer material can be etched through the etching gas. However, the prior art has a problem of uneven distribution of etching gas, which may cause different etching degrees of wafer materials at different positions, thereby causing a hidden danger of over-etching or under-etching, and seriously affecting the yield of LED chips.
Disclosure of Invention
The present invention provides a dry etching gas control system, which can ensure uniform contact between the etching gas in the etching chamber and the wafer, thereby improving the etching uniformity.
The technical scheme adopted by the invention for solving the technical problem is as follows:
the utility model provides a dry etching gas control system, includes the etching cavity, the etching cavity is sealed cavity, be provided with in the etching cavity:
the gas distribution plate is positioned at the upper part of the etching cavity; the gas distribution plate is provided with a plurality of gas inlet holes, and the density of the gas inlet holes is gradually reduced from the center to the edge of the gas distribution plate;
the wafer bearing disc is used for bearing a wafer and is positioned in the orthographic projection of the gas distribution disc at the lower part of the etching cavity.
Compared with the prior art, the technical scheme has the beneficial effects that: the distribution condition of etching gas in the etching cavity is controlled through the gas distribution plate, and the gas inlet holes in the gas distribution plate are not uniformly distributed but are gradually sparse from the center to the edge, so that the etching gas entering the etching cavity is more distributed in the center and less distributed around, and under the action of the air pumping system, the etching gas actually contacting the wafer is uniformly distributed, the etching degree is prevented from being different, and the wafer etching uniformity is improved.
Furthermore, a plurality of air exhaust ports are arranged on the etching cavity body, and the air exhaust ports are uniformly distributed on the periphery of the etching cavity body.
The beneficial effect who adopts above-mentioned scheme is: a plurality of extraction openings evenly distributed around the etching cavity, through the simultaneous working of a plurality of extraction openings, form even negative pressure around the etching cavity to inhale etching gas from the center of etching cavity all around, further guarantee that the etching gas of actual contact wafer can evenly distributed.
Further, the plurality of pumping ports comprise three pumping ports, and the three pumping ports comprise a first pumping port, a second pumping port and a third pumping port; the first air exhaust port, the second air exhaust port and the third air exhaust port are uniformly distributed on the peripheral side wall of the etching cavity.
The beneficial effect who adopts above-mentioned scheme is: be provided with the three extraction opening of first extraction opening, second extraction opening and third extraction opening, can realize etching gas and wafer even contact, can not make system architecture too complicated simultaneously, system architecture sets up more rationally.
Further, the horizontal heights of the first pumping hole, the second pumping hole and the third pumping hole are lower than the horizontal height of the wafer bearing disc.
The beneficial effect who adopts above-mentioned scheme is: the first air exhaust port, the second air exhaust port and the third air exhaust port are located below the level of the wafer bearing plate and are matched with the gravity action, so that etching gas can smoothly flow through the wafer, and the etching effect is guaranteed.
Further, the buffer tail cavity is a sealed cavity;
the first air exhaust port, the second air exhaust port and the third air exhaust port are respectively communicated with the buffer tail cavity through air exhaust pipelines, the buffer tail cavity is communicated with an air exhaust device, and the air exhaust device is used for exhausting etching gas in the etching cavity.
The beneficial effect who adopts above-mentioned scheme is: be provided with the buffering tail chamber, and the buffering tail chamber is linked together with first extraction opening, second extraction opening and third extraction opening respectively through the exhaust tube, can effectively prevent etching cavity internal pressure shock through the buffering tail chamber, avoids the particulate matter in the etching cavity to raise.
Further, the air pumping pipeline comprises a first branch pipeline, a second branch pipeline, a third branch pipeline and a main pipeline;
one end of each of the first branch pipeline, the second branch pipeline and the third branch pipeline is respectively communicated with the first air exhaust port, the second air exhaust port and the third air exhaust port, the other end of each of the first branch pipeline, the second branch pipeline and the third branch pipeline is communicated with one end of the main pipeline, and the other end of the main pipeline is communicated with the air exhaust device.
The beneficial effect who adopts above-mentioned scheme is: through first branch road pipeline, second branch road pipeline, third branch road pipeline and main road pipeline respectively with first extraction opening, second extraction opening and third extraction opening switch-on, can make first extraction opening, second extraction opening and third extraction opening form the negative pressure simultaneously, guarantee that etching gas evenly passes through the wafer to the etching gas that mixes the particulate matter in will etching the cavity from a plurality of directions takes out.
Furthermore, an automatic pressure control valve is arranged on the air pumping pipeline and electrically connected with the air pumping device.
The beneficial effect who adopts above-mentioned scheme is: the air outlet is controlled by the automatic pressure control valve, so that the slow change of the pressure of the etching cavity is ensured.
Further, the automatic pressure control valve is arranged on the main pipeline.
The beneficial effect who adopts above-mentioned scheme is: the automatic pressure control valve is arranged on the main pipeline, and the automatic pressure control valve can simultaneously control the first branch pipeline, the second branch pipeline and the third branch pipeline to simultaneously discharge air.
Further, the etching cavity is also internally provided with:
an upper electrode disposed above the gas diverter tray, wherein the upper electrode is configured to ionize a plasma in an etching gas;
and the lower electrode is arranged below the wafer bearing disc, and is used for forming an electric field and guiding plasma in the etching gas through the electric field.
The beneficial effect who adopts above-mentioned scheme is: the upper electrode is used for ionizing plasma in the etching gas, and the electric field formed by the lower electrode plays a role in guiding the plasma in the etching gas, so that the etching gas is guided to the wafer, and the etching gas can be ensured to be effectively contacted with the wafer.
Further, the etching cavity is composed of a top plate, a bottom plate and a side wall, the top plate and the bottom plate are oppositely arranged, the side wall is arranged between the top plate and the bottom plate, and spaces among the top plate, the bottom plate and the side wall form the etching cavity;
the top plate or the side wall is provided with an opening and closing fetching door;
the air exhaust opening is arranged on the side wall or the bottom plate of the etching cavity and is positioned in an area outside the vertical projection of the wafer bearing plate.
The beneficial effect who adopts above-mentioned scheme is: the extraction opening is located in the area outside the vertical projection of the wafer bearing disc, so that the wafer bearing disc can be avoided, the buffering effect of the wafer bearing disc is reduced, negative pressure is effectively formed, and the etching gas mixed with particles can be smoothly guided out of the etching cavity.
Drawings
Fig. 1 is a schematic structural diagram of a dry etching gas control system according to the present invention.
FIG. 2 is a schematic diagram of an etching chamber in a dry etching gas control system according to the present invention.
Fig. 3 is a schematic structural diagram of a gas distribution plate in a dry etching gas control system according to the present invention.
FIG. 4 is a schematic diagram of the distribution of pumping holes in a dry etching gas control system according to the present invention.
Fig. 5 is a schematic distribution diagram of a pumping line in a dry etching gas control system according to the present invention.
In the figures, the list of components represented by the various reference numbers is as follows:
the gas distribution plate 101, the gas inlet 102, the wafer bearing plate 103, the pumping hole 104, the pumping pipeline 105, the upper electrode 106 and the lower electrode 107;
a first pumping hole 1041, a second pumping hole 1042 and a third pumping hole 1043;
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or assembly referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, and the two components can be communicated with each other. When an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When a component is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
A gas distribution plate 101 is typically disposed within the etching chamber 1, and the gas distribution plate 101 is used to introduce an etching gas into the etching chamber 1. In order to make the distribution of the etching gas uniform, the prior art generally distributes the plurality of gas inlet holes 102 on the gas distribution plate 101 uniformly. If the solution in the prior art is adopted, the etching gas entering the etching chamber 1 through the uniformly distributed gas inlet holes 102 is indeed uniformly distributed above the inside of the etching chamber 1, however, it is known that the solution is difficult to realize uniform contact between the etching gas and the wafer on the contrary by analyzing the movement process of the etching gas.
When etching gas enters the etching cavity 1 through the gas distribution plate 101 uniformly distributed with the plurality of gas inlet holes 102, the etching gas is indeed uniformly distributed above the etching cavity 1; if the etching gas is only subjected to gravity, it can be uniformly distributed on the surface of the wafer when it is sunk to the wafer. In the application process, the air extractor is needed to extract the particles generated by etching together with the gas in the cavity, so that the etching gas can be under the action of air extraction negative pressure under the action of gravity, and at the moment, the etching gas can be under the action of downward and outward forces, so that the etching gas at the edge position of the wafer can be directly extracted, and the etching gas at the center position of the wafer can be extracted after passing through the edge position of the wafer. It is envisioned that the distribution of the etching gas actually contacting the wafer during this process is not uniform, but rather the shorter the contact time with the etching gas the less the amount of contact with the etching gas the more centrally located. This results in different etching levels of the wafer material at different locations, under-etching at the center of the wafer due to a small amount of contact, and over-etching at the edge of the wafer due to a large amount of contact. The etching degree of the LED chips in the same batch is inconsistent, and the yield of the LED chips is seriously influenced. The invention aims to improve the structure of the existing gas etching system, and can ensure that etching gas in an etching cavity 1 is uniformly contacted with a wafer, thereby improving the etching uniformity.
As shown in fig. 1, fig. 2 and fig. 3, in order to achieve the above effects, the present invention provides a dry etching gas control system, which mainly includes an etching chamber 1, where the etching chamber 1 is a sealed chamber.
A gas distribution plate 101 and a wafer bearing plate 103 are arranged in the etching chamber 1. The gas distribution plate 101 is positioned at the upper part of the etching cavity 1; the wafer bearing disc 103 is used for bearing a wafer, the wafer bearing disc 103 is located in the orthographic projection of the gas distribution plate 101 at the lower part of the etching chamber 1, and the wafer bearing disc 103 is located in the orthographic projection of the gas distribution plate 101 at the lower part of the etching chamber 1. The gas distribution plate 101 is provided with a plurality of gas inlet holes 102, unlike the prior art, in the present invention, the gas inlet holes 102 on the gas distribution plate 101 are not uniformly distributed, and as shown in fig. 3, the density of the gas inlet holes 102 is gradually decreased from the center to the edge of the gas distribution plate 101. I.e. near the center of the gas distributor 101, the gas inlet holes 102 are relatively dense; the air inlet holes 102 are sparse near the edge of the gas splitter plate 101; that is to say the density of the inlet holes 102 near the centre of the gas diverter disc 101 is greater than the density of the inlet holes 102 near the edge of the gas diverter disc 101.
It will be appreciated that the greater the density, the greater the number of inlet holes 102.
Alternatively, the inlet holes 102 may be irregularly arranged on the gas distributor plate 101.
In the dry etching gas control system of the present invention, when the etching gas enters the etching chamber 1 through the gas distribution plate 101, which is distributed gradually sparsely from the center to the edge of the gas inlet hole 102, the distribution state of the etching gas is more dense closer to the center at the upper part of the inside of the etching chamber 1. Under the action of gravity, the etching gas moves downwards; under the action of the negative pressure of the air suction, the etching gas moves outwards. A considerable part of the etching gas originally positioned in the center firstly passes through the center of the wafer and then passes through the edge of the wafer under the action of two forces; the etching gas originally located at the edge only passes through the edge of the wafer. Therefore, the etching gas is formed more densely closer to the center above the inside of the etching chamber 1, and a certain balance can be achieved. The distribution condition of etching gas in the etching cavity 1 is controlled through the gas distribution plate 101, and the gas inlet holes 102 in the gas distribution plate 101 are not uniformly distributed but are gradually sparse from the center to the edge, so that the etching gas entering the etching cavity 1 is more distributed in the center and less distributed around, and under the action of an air exhaust system, the etching gas actually contacting the wafer is uniformly distributed, the etching degree is prevented from being different, and the wafer etching uniformity is improved.
Preferably, the etching chamber 1 is further provided with a plurality of pumping holes 104, and the plurality of pumping holes 104 are uniformly distributed around the etching chamber 1.
If only one pumping hole 104 is provided, the pumping device can only generate negative pressure in one direction, which results in that all etching gas can only come out through the only pumping hole 104, and at this time, the wafer close to the pumping hole 104 will be contacted with a large amount of etching gas, and the wafer far from the pumping hole 104 will be contacted with a small amount of etching gas. According to the invention, the plurality of pumping holes 104 are arranged in the etching cavity 1, and the plurality of pumping holes 104 are uniformly distributed around the etching cavity 1, so that uniform negative pressure is formed around the etching cavity 1 by simultaneously working the plurality of pumping holes 104, thereby sucking etching gas from the center to the periphery of the etching cavity 1 and ensuring that the etching gas actually contacting with a wafer can be uniformly distributed.
Theoretically, on one hand, the more pumping holes 104 are provided, the more uniformly the etching gas can contact the wafer; on the other hand, however, the more the pumping holes 104 are provided, the more complicated the structure of the dry etching gas control system becomes.
As shown in fig. 4, more preferably, three pumping holes 104 are further disposed in the etching chamber 1, which are respectively a first pumping hole 1041, a second pumping hole 1042 and a third pumping hole 1043; the first pumping holes 1041, the second pumping holes 1042 and the third pumping holes 1043 are uniformly distributed on the peripheral side wall of the etching chamber 1. The cross section of the etching chamber 1 is circular, and the first pumping hole 1041, the second pumping hole 1042 and the third pumping hole 1043 are uniformly distributed on the peripheral side wall of the etching chamber 1, that is, the arc line between the first pumping hole 1041, the second pumping hole 1042 and the third pumping hole 1043 is 120 °. The invention is provided with three pumping holes 104, namely the first pumping hole 1041, the second pumping hole 1042 and the third pumping hole 1043, so that the etching gas can be uniformly contacted with the wafer, and meanwhile, the system structure is not too complex and is more reasonable.
It should be noted that the above is merely provided as a preferred embodiment, and the number and arrangement of the pumping ports 104 are not limited only. In the implementation of the technical solution of the present invention, the number and the arrangement of the pumping holes 104 may be adjusted according to actual situations, for example, two, four, five, six or more pumping holes are provided, and the relative position between the pumping holes 104 may also be flexibly adjusted as long as the etching gas can uniformly contact with the wafer.
As shown in fig. 4, the first pumping port 1041, the second pumping port 1042 and the third pumping port 1043 preferably have a lower level than the level of the wafer carrier 103. If a plurality of pumping ports 104 are simply uniformly distributed, and the pumping ports 104 are located above the wafer carrier plate 103, the etching gas is guided to move upward and cannot uniformly flow across the entire wafer. According to the invention, the pumping hole 104 is arranged at a position lower than the wafer bearing disc 103, and the etching gas can smoothly flow through the whole wafer by matching the action of gravity, so that the etching effect is ensured.
As shown in fig. 1, a dry etching gas control system includes a buffer tail cavity 2 in addition to the etching cavity 1, and the buffer tail cavity 2 is a sealed cavity. Specifically, the first pumping hole 1041, the second pumping hole 1042 and the third pumping hole 1043 are respectively communicated with the buffer tail cavity 2 through a pumping pipeline 105, the buffer tail cavity 2 is communicated with a pumping device, and the pumping device is configured to pump out the etching gas in the etching cavity 1.
In the prior art, an air extractor is generally directly connected to the air extraction opening 104, and the etching gas with particles is directly extracted by the air extractor, however, although the structure is simple, the problem of unstable air pressure exists, and sudden pressure changes easily occur. In order to solve the problem, the buffer tail cavity 2 is provided, and the buffer tail cavity 2 is respectively communicated with the first pumping hole 1041, the second pumping hole 1042 and the third pumping hole 1043 through the pumping pipe 105, so that sudden pressure change in the etching cavity 1 can be effectively prevented through the buffer tail cavity 2, and particulate matters in the etching cavity 1 are prevented from being lifted.
As shown in fig. 5, preferably, the suction line 105 includes a first branch line 1051, a second branch line 1052, a third branch line 1053, and a main line 1054. One end of each of the first branch pipe 1051, the second branch pipe 1052 and the third branch pipe 1053 is respectively communicated with the first pumping hole 1041, the second pumping hole 1042 and the third pumping hole 1043, the other end of each of the first branch pipe 1051, the second branch pipe 1052 and the third branch pipe 1053 is communicated with one end of the main pipe 1054, and the other end of the main pipe 1054 is communicated with a pumping device. Through first branch pipeline 1051, second branch pipeline 1052, third branch pipeline 1053 and main pipeline 1054 respectively with first extraction opening 1041, second extraction opening 1042 and third extraction opening 1043 switch-on, can make first extraction opening 1041, second extraction opening 1042 and third extraction opening 1043 form the negative pressure simultaneously, guarantee that etching gas evenly passes through the wafer to carry over the etching gas that mixes the particulate matter in etching cavity 1 from a plurality of directions.
Preferably, an automatic pressure control valve is disposed on the pumping line 105, and the automatic pressure control valve is electrically connected to the pumping device. The automatic pressure control valve is a device in the prior art, and can be used for adjusting the opening and the working state of an air extractor according to the air pressure of the etching cavity 1 and controlling the air extraction amount and the air extraction speed in the technical scheme. When the air pressure in the etching cavity 1 is higher, the automatic pressure control valve increases the opening, the power of the air pumping device is increased, and the air pumping amount and the air pumping speed are increased; when the air pressure in the etching chamber 1 is small, the automatic pressure control valve reduces the opening, the power of the air pumping device is reduced, and the air pumping amount and the air pumping speed are reduced. The air outlet is controlled by the automatic pressure control valve, so that the slow change of the pressure of the etching cavity 1 is ensured.
The automatic pressure control valve is arranged on the main pipeline. The automatic pressure control valve is arranged on the main pipeline, and the automatic pressure control valve can simultaneously control the first branch pipeline 1051, the second branch pipeline 1052 and the third branch pipeline 1053 to simultaneously discharge air.
As shown in fig. 1 and 2, an upper electrode 106 and a lower electrode 107 are further disposed in the etching chamber 1. The upper electrode 106 is arranged above the gas distribution plate 101; the lower electrode 107 is disposed below the wafer carrier plate 103. Wherein the upper electrode 106 is used for ionizing plasma in the etching gas; the lower electrode 107 is used to form an electric field (e.g., a bias electric field) and to guide plasma in the etching gas by the electric field. The plasma in the etching gas is ionized through the upper electrode 106, and then the plasma in the etching gas is guided through the electric field formed by the lower electrode 107, so that the etching gas is guided to the wafer, and the etching gas can be ensured to be effectively contacted with the wafer.
Preferably, the etching chamber 1 is composed of a top plate, a bottom plate and a side wall, the top plate and the bottom plate are oppositely arranged, the side wall is arranged between the top plate and the bottom plate, and the space between the top plate, the bottom plate and the side wall forms the etching chamber 1; the top plate or the side wall is provided with an opening and closing fetching door; the pumping holes 104 are disposed on the sidewall or the bottom plate of the etching chamber 1, and the pumping holes 104 are located in a region outside the vertical projection of the wafer carrier 103.
The pumping port 104 is located at a region outside the vertical projection of the wafer susceptor 103, which means that when the pumping port 104 and the wafer susceptor 103 are vertically projected on the base plate, the pumping port 104 is located outside the projection range of the wafer susceptor 103. If the pumping hole 104 is located within the projection range of the wafer carrier 103, the negative pressure formed by the pumping hole 104 will make the etching gas bypass the edge of the wafer, move downward and then enter the pumping hole 104, such gas path will be very tortuous, and the wafer carrier 103 will cause a certain buffer effect. The air extraction opening 104 is located in a region outside the vertical projection of the wafer bearing plate 103, so that the air path is more direct, the wafer bearing plate 103 can be avoided, the buffering effect of the wafer bearing plate 103 is reduced, negative pressure is effectively formed, and the etching gas mixed with particles can be smoothly guided out of the etching cavity 1.
In summary, in the dry etching gas control system provided by the present invention, the gas distribution plate 101 is used to control the distribution of the etching gas in the etching chamber 1, and the gas inlets 102 on the gas distribution plate 101 are not uniformly distributed, but are gradually distributed sparsely from the center to the edge, so that the etching gas entering the etching chamber 1 is distributed more in the center and less in the periphery, and under the action of the gas pumping system, the etching gas actually contacting the wafer is distributed uniformly, thereby avoiding different etching degrees, and further improving the wafer etching uniformity.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. The dry etching gas control system comprises an etching cavity, wherein the etching cavity is a sealed cavity, and is characterized in that:
the gas distribution plate is positioned at the upper part of the etching cavity; the gas distribution plate is provided with a plurality of gas inlet holes, and the density of the gas inlet holes is gradually reduced from the center to the edge of the gas distribution plate;
the wafer bearing disc is used for bearing a wafer and is positioned in the orthographic projection of the gas distribution disc at the lower part of the etching cavity.
2. A dry etching gas control system according to claim 1, wherein: the etching cavity is also provided with a plurality of pumping holes which are uniformly distributed on the periphery of the etching cavity.
3. A dry etching gas control system according to claim 2, wherein: the plurality of pumping holes comprise three pumping holes, and the three pumping holes comprise a first pumping hole, a second pumping hole and a third pumping hole; the first air exhaust port, the second air exhaust port and the third air exhaust port are uniformly distributed on the peripheral side wall of the etching cavity.
4. A dry etching gas control system according to claim 3, wherein: the horizontal heights of the first pumping hole, the second pumping hole and the third pumping hole are lower than the horizontal height of the wafer bearing disc.
5. A dry etching gas control system according to claim 3, wherein: the buffer tail cavity is a sealed cavity;
the first air exhaust port, the second air exhaust port and the third air exhaust port are respectively communicated with the buffer tail cavity through air exhaust pipelines, the buffer tail cavity is communicated with an air exhaust device, and the air exhaust device is used for exhausting etching gas in the etching cavity.
6. A dry etching gas control system according to claim 5, wherein: the air pumping pipeline comprises a first branch pipeline, a second branch pipeline, a third branch pipeline and a main pipeline;
one end of each of the first branch pipeline, the second branch pipeline and the third branch pipeline is respectively communicated with the first air exhaust port, the second air exhaust port and the third air exhaust port, the other end of each of the first branch pipeline, the second branch pipeline and the third branch pipeline is communicated with one end of the main pipeline, and the other end of the main pipeline is communicated with the air exhaust device.
7. A dry etching gas control system according to claim 6, wherein: and the air pumping pipeline is provided with an automatic pressure control valve which is electrically connected with the air pumping device.
8. A dry etching gas control system according to claim 7, wherein: the automatic pressure control valve is arranged on the main pipeline.
9. A dry etching gas control system according to any one of claims 1 to 8, wherein: still be provided with in the etching cavity:
an upper electrode disposed above the gas diverter tray, wherein the upper electrode is configured to ionize a plasma in an etching gas;
and the lower electrode is arranged below the wafer bearing disc, and is used for forming an electric field and guiding plasma in the etching gas through the electric field.
10. A dry etching gas control system according to any one of claims 1 to 8, wherein: the etching cavity consists of a top plate, a bottom plate and a side wall, the top plate and the bottom plate are oppositely arranged, the side wall is arranged between the top plate and the bottom plate, and spaces among the top plate, the bottom plate and the side wall form the etching cavity;
the top plate or the side wall is provided with an opening and closing fetching door;
the air exhaust opening is arranged on the side wall or the bottom plate of the etching cavity and is positioned in an area outside the vertical projection of the wafer bearing plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010291585.2A CN113451168A (en) | 2020-04-14 | 2020-04-14 | Dry etching gas control system |
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| CN202010291585.2A CN113451168A (en) | 2020-04-14 | 2020-04-14 | Dry etching gas control system |
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Citations (15)
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Application publication date: 20210928 |