CN109065432A - A kind of dry etching equipment - Google Patents
A kind of dry etching equipment Download PDFInfo
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- CN109065432A CN109065432A CN201810877126.5A CN201810877126A CN109065432A CN 109065432 A CN109065432 A CN 109065432A CN 201810877126 A CN201810877126 A CN 201810877126A CN 109065432 A CN109065432 A CN 109065432A
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- marginal zone
- gas
- dry etching
- etching equipment
- wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
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- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of dry etching equipment, comprising: gas supply part, the gas supply part are located in the top electrode of the dry etching equipment, are arranged in parallel with wafer, and the lower surface area of the gas supply part is not less than the upper surface area of the wafer；The gas supply part from-inner-to-outer successively includes center, surrounds the middle area of the center and surround the marginal zone of the middle area, wherein the marginal zone is divided at least two edges area gas compartment, and the marginal zone gas compartment runs through the marginal zone；By adjusting the reaction gas in each region of gas supply part, make the wafer that there is uniform etch rate.
Description
Technical field
The invention belongs to field of semiconductor devices, are related to a kind of dry etching equipment.
Background technique
Etching (etching) is the technology by materials'use chemical reaction or physical shock effect and removal, in fact, narrow
Reason and good sense solution is exactly photoetching corrosion, first passes through photoetching for photoresist and carries out photolithographic exposure processing, is then realized otherwise rotten
Erosion processing is to remove the required part removed.Usual lithographic technique can be divided into wet etching (wet etching) and dry method is carved
(dry etching) two classes are lost, it is in semiconductor fabrication process, microelectronics manufacture and micro/nano level manufacturing process
A kind of considerable step is the main technique of graphical (pattern) processing being associated with photoetching.
Plasma etching is one of the most common type form in dry etching, and principle is: will be exposed to the gas of electronics regions
Body forms plasma, when plasma passes through electric field acceleration, can discharge enough energy, promote plasma and material surface
It reacts.Currently, the plasma etching in dry etching is due to that can make circuitous pattern become more in semicon industry
Finely, therefore more and more extensive use is obtained.
Plasma etching equipment generally includes: reaction chamber, a pair of parallel plate electrode being made of top electrode and lower electrode,
The top electrode includes gas compartment, for providing reaction gas to reaction chamber.As plasma etching industrial step 1 are as follows: by wafer
It is sent into reaction chamber, reaction gas is passed through in reaction chamber from gas compartment, applies high frequency voltage on parallel plate electrode, between electrode
High-frequency electric field is formed, under the action of high-frequency electric field, reaction gas forms plasma, and plasma occurs anti-in crystal column surface
It answers, wafer is performed etching.In etching process, reaction gas is usually passed through above wafer on one side, while under wafer
Fang Jinhang pumping, to exclude the volatile byproducts that reaction generates.
In existing dry etching equipment, the intake method of General reactions gas is to enter reaction chamber from the top of reaction chamber
Center and edge, be only capable of the distribution of rough regulation reaction gas, cannot the distribution to reaction gas accurately adjusted,
And in existing Lam board, as shown in Figure 1, usually containing a protrusion cantilever in the lower section of electrostatic chuck (ESC) 100
200, the distributing homogeneity of the reaction gas of the fringe region of wafer 300, leads to wafer 300 when this cantilever 200 will affect pumping
Fringe region etch rate it is different, etching and other crystalline substances so as to cause the fringe region of the wafer 300 near cantilever 200
The etching state of the fringe region of circle 300 has difference, generates etching exceptions area 301 in the fringe region of wafer 300, leads to crystalline substance
The etch rate of the fringe region of circle 300 is different, and the fringe region etching of wafer 300 is uneven, influences the wafer of subsequent preparation
300 quality.
Based on the above, a kind of dry etching equipment is provided, for accurately adjusting the distribution of reaction gas, is improved brilliant
The uniformity of the reaction gas of round fringe region, so that the etch rate of the fringe region of wafer is generally in identical, the side of wafer
Edge region etch is uniform, improves the quality of the wafer of subsequent preparation, it has also become this field urgent problem to be solved.
Summary of the invention
In view of the foregoing deficiencies of prior art, it the purpose of the present invention is to provide a kind of dry etching equipment, is used for
The distribution for being only capable of rough regulation reaction gas in the prior art is solved, cannot accurately adjust the distribution of reaction gas, and
In existing Lam board, due to the protrusion cantilever contained below ESC, the reaction gas of the fringe region of wafer when causing to be evacuated
Body is unevenly distributed, and causes the etch rate of the fringe region of wafer different, and the etching of the fringe region of wafer is uneven, influences
The problem of wafer quality of subsequent preparation.
In order to achieve the above objects and other related objects, the present invention provides a kind of dry etching equipment, comprising: gas supply
Portion, the gas supply part are located in the top electrode of the dry etching equipment, are arranged in parallel with wafer, the gas supply part
Lower surface area be not less than the wafer upper surface area；The gas supply part from-inner-to-outer successively include center,
It surrounds the middle area of the center and surrounds the marginal zone of the middle area, wherein the marginal zone is divided at least two
Marginal zone gas compartment, the marginal zone gas compartment run through the marginal zone；By adjusting in each region of gas supply part
Reaction gas makes the wafer have uniform etch rate.
Preferably, the pattern of the marginal zone includes annular, and the pattern of the marginal zone gas compartment includes sector.
Preferably, the range of the width ratio of the width of the marginal zone and the gas supply part is 1/8~1/4.
Preferably, the middle area and the marginal zone width having the same.
Preferably, the center and middle area respectively include multiple gas compartments.
Preferably, the marginal zone includes N number of marginal zone gas compartment, wherein 3≤N≤15.
Preferably, the type of the reaction gas includes oxygen, carbon tetrafluoride, perfluoroethane, perfluoropropane, octafluoro ring fourth
One or more of alkane, hexachlorobutadiene, octafluoro cyclopentene, Nitrogen trifluoride and the formed group of argon gas.
Preferably, the method for adjusting the reaction gas includes the type to the reaction gas, concentration, flow, speed
And one of the adjusting in direction or combination.
Preferably, in the different marginal zone gas compartments, the type of the reaction gas is same or different.
Preferably, marginal zone described in the marginal zone gas compartment equal part.
Preferably, the dry etching equipment further includes and the top electrode lower electrode disposed in parallel, the lower electrode
It further include cantilever, the cantilever is located at the lower section of the marginal zone gas compartment.
Preferably, in the different marginal zone gas compartments, the type of the reaction gas is different, is located on the cantilever
The reaction gas in the marginal zone gas compartment of side is greater than the adjacent marginal zone to the etch rate of the wafer
The etch rate of the reaction gas in gas compartment to the wafer.
Preferably, in the different marginal zone gas compartments, the type of the reaction gas is identical, is located on the cantilever
The flow of the reaction gas in the marginal zone gas compartment of side is greater than described in the adjacent marginal zone gas compartment
The range of the flow of reaction gas is 0.1~2sccm.
Preferably, the dry etching equipment includes plasma etch apparatus.
As described above, dry etching equipment of the invention, has the advantages that the distribution by marginal zone gas compartment
And the reaction gas in each marginal zone gas compartment of adjusting, make the fringe region of wafer that there is uniform etch rate, so that pumping
When, the reaction gas of the fringe region of wafer is evenly distributed, and the etch rate of the fringe region of wafer is generally in identical, raising wafer
Fringe region etching homogeneity；It is located at the reaction gas of center, middle area and marginal zone by adjusting, so that wafer
It is in equal etch rate that surface, which has generally, to improve the quality of the wafer of preparation.
Detailed description of the invention
Fig. 1 is shown as the structural schematic diagram after the completion of crystal column surface etching in the prior art.
Fig. 2 is shown as the structural schematic diagram of dry etching equipment in the present invention.
Fig. 3 is shown as the operating path signal of crystal round fringes region reaction gas when reaction chamber is evacuated in the present invention
Figure.
Fig. 4 is shown as the structural schematic diagram of gas supply part in the present invention.
Component label instructions
100,110 electrostatic chuck
200,210 cantilever
300,310 wafer
301 etching exceptions areas
410 gas supply parts
411 centers
412 middle areas
413 marginal zones
510 vacuum pumps
610 operating paths
710 marginal zone gas compartments
Specific embodiment
Embodiments of the present invention are illustrated by particular specific embodiment below, those skilled in the art can be by this explanation
Content disclosed by book is understood other advantages and efficacy of the present invention easily.
Please see Fig. 2 to Fig. 4.It should be clear that this specification structure depicted in this specification institute accompanying drawings, ratio, size etc., only to
Cooperate the revealed content of specification, so that those skilled in the art understands and reads, being not intended to limit the invention can be real
The qualifications applied, therefore do not have technical essential meaning, the tune of the modification of any structure, the change of proportionate relationship or size
It is whole, in the case where not influencing the effect of present invention can be generated and the purpose that can reach, it should all still fall in disclosed skill
Art content obtains in the range of capable of covering.Meanwhile in this specification it is cited as "upper", "lower", "left", "right", " centre " and
The term of " one " etc. is merely convenient to being illustrated for narration, rather than to limit the scope of the invention, relativeness
It is altered or modified, under the content of no substantial changes in technology, when being also considered as the enforceable scope of the present invention.
As shown in Fig. 2, the present invention provides a kind of dry etching equipment, the dry etching equipment includes plasma etching
Equipment.Bottom in the dry etching equipment is equipped with roughly the same for loading wafer 310, having with the wafer 310
The electrostatic chuck 110 of pattern, the wafer 310 include central area, intermediate region and fringe region, the central area, in
Between the area ratio range of region and fringe region be 6:1:1~2:1:1.The bottom of the dry etching equipment is equipped with pumping dress
It sets, such as vacuum pump 510.The top of the electrostatic chuck 110 be equipped with the electrostatic chuck 110 top electrode disposed in parallel,
The top electrode includes gas supply part 410, for reaction chamber provide reaction gas, the gas supply part 410 with it is described
Wafer 310 is arranged in parallel and is located at the surface of the wafer 310, and the lower surface area of the gas supply part 410 is not less than
The upper surface area of the wafer 310.The gas supply part 410 is distributed with multizone, and from-inner-to-outer successively includes center
Area 411, the middle area 412 for surrounding the center 411 and the marginal zone 413 for surrounding the middle area 412, wherein the side
Edge area 413 is divided at least two edges area gas compartment 710, and the marginal zone gas compartment 710 runs through the marginal zone 413；It is logical
Overregulate the marginal zone gas in the center 411, middle area 412 and the marginal zone 413 in the gas supply part 410
Reaction gas in body room 710 makes the wafer 310 have uniform etch rate.
As an example, the dry etching equipment further includes the edge ring that the conductive materials such as silicon are formed, the edge ring
The fringe region of the wafer 310 is surrounded, the upper surface of the edge ring is higher than the upper surface of the wafer 310.With conduction
Property the edge ring to improve 310 surface of wafer the reaction gas be distributed uniformity, thus improve described in
The surface etch uniformity of wafer 310.
Specifically, the wafer 310 being put into the reaction chamber is adsorbed by the electrostatic chuck 110, thus fixed
The position of the wafer 310；In etching process, from the gas supply part 410 in the top electrode to the wafer 310
Top is passed through the reaction gas, and the lower electrode positioned at the reaction chamber lower part provides high frequency voltage, and high frequency is formed between electrode
Electric field, by the reaction gas plasma, forms the plasma for etching the wafer 310 under the action of high-frequency electric field,
The wafer 310 is performed etching；It is evacuated simultaneously in the lower section of the wafer 310 by the vacuum pump 510, it is anti-to exclude
The volatile byproducts that should be generated, such as reaction generate the polymer with adhesiveness, the extra reaction gas and from
Daughter etc. forms the operating path 610 of the reaction gas in the reaction chamber.
As an example, the pattern of the marginal zone 413 includes annular, the pattern of the marginal zone gas compartment 710 includes fan
Shape.
Specifically, the pattern of the gas supply part 410 is generally rounded, the pattern of the marginal zone 413 is annular, is located at
The pattern of the marginal zone gas compartment 710 in the marginal zone 413 is sector, can be wrapped inside the marginal zone gas compartment 710
Institute is passed through from the gas vent containing several equally distributed interconnections or independent gas vent, the reaction gas
Reaction chamber is stated, the direction of the reaction gas is adjusted by the gas vent, so that control is located at the wafer 310
The direction of the reaction gas of fringe region.The central area of the projected area of the center 411 and the wafer 310
Projected area be generally in it is equal, the projected area of the middle area 412 and the projected area of the intermediate region of the wafer 310 are generally in
Equal, the projected area of the marginal zone 413 is not less than the projected area of the fringe region of the wafer 310.In another implementation
In example, other patterns are can also be used in the pattern of the pattern of the marginal zone 413 and the marginal zone gas compartment 710, do not make herein
Limitation.
As an example, the range of the width ratio of the width of the marginal zone 413 and the gas supply part 410 be 1/8~
1/4, and the middle area 412 and the marginal zone 413 width having the same.
Specifically, since easily there is the non-uniform phenomenon of etch rate in the fringe region of the wafer 310, when the edge
When the projection of the width in area 413 covers the width of the fringe region of the wafer 310, be conducive to the side for improving the wafer 310
The etch rate in edge region, therefore, in the present embodiment, the width of the width of the marginal zone 413 and the gas supply part 410
Ratio ranges preferably from 1/4, and the middle area 412 and the marginal zone 413 width having the same, therefore, the centre
The range of the width ratio of area 412 and the gas supply part 410 is 1/4, the center 411 and the gas supply part 410
Width ratio range be 1/4.In another embodiment, the edge can also be selected according to the specific size of the wafer 310
The width range in area 413, middle area 412 and center 411, herein with no restriction.
As an example, the center 411 and middle area 412 respectively further comprise multiple gas compartments.
Specifically, the center 411 may include 2~5 center gas compartments, the middle area 412 may also comprise 2~
10 middle area gas compartments are provided different described anti-with increasing the area distribution of the gas supply part 410 convenient for subregion
Gas is answered, consequently facilitating controlling the different zones on the surface of the wafer 310, there is the surface of the wafer 310
Uniform etch rate.In the present embodiment, the pattern of the gas supply part 410 is rounded, the marginal zone 413 and it is described in
Between the pattern in area 412 be annular, and the marginal zone 413 and the middle area 412 width having the same, the center
411 pattern is rounded, and the pattern of the gas compartment 710 is sector, in another embodiment, the gas supply part 410, side
Edge area 413, middle area 412, center 411 and marginal zone gas compartment 710 pattern and its width range can also as needed into
Row selection, the center 411 may also include 2~5 center gas compartments, and the middle area 412 may also include 2~10
A middle area gas compartment, the center gas compartment and middle area gas compartment, also are included in equal part or non-in respective area
One of equal part or combination, pattern, width and the area of the center gas compartment and middle area gas compartment, art technology
Personnel can select according to specific requirements, herein with no restriction.
As an example, the marginal zone 413 includes N number of marginal zone gas compartment 710, wherein 3≤N≤15；The side
Marginal zone 413 described in 710 equal part of edge area gas compartment.
Specifically, by controlling the marginal zone gas compartment 710, it can be to the fringe region of the wafer 310 point
It is not controlled, so that the fringe region of the wafer 310 has uniform etch rate, improves the described of subsequent preparation
The quality of wafer 310.Therefore, the number of the marginal zone gas compartment 710 is more, is more conducive to the edge to the wafer 310
The control of the etch rate in region, but will increase process complexity simultaneously, therefore those skilled in the art can be according to specific requirements
The number of the marginal zone gas compartment 710 and the range of the marginal zone gas compartment 710 are set, herein with no restriction.
As an example, the reaction gas includes oxygen (O2), carbon tetrafluoride (CF4), perfluoroethane (C2F6), perfluor third
Alkane (C3F8), octafluorocyclobutane (C4F8), hexachlorobutadiene (C4F6), octafluoro cyclopentene (C5F8), Nitrogen trifluoride (NF3) and argon gas
(Ar) one or more of formed group.
As an example, the method for adjusting the reaction gas includes the type to the reaction gas, concentration, flow, speed
One of the adjusting in degree and direction or combination.
Specifically, including adjusting to be located at the described anti-of the center 411, the middle area 412 and the marginal zone 413
Answer gas, by adjust the type of the reaction gas in the gas supply part 410 with multizone distribution, concentration,
One of flow, speed and direction or combination, so that it is generally in equal etch rate that the surface of the wafer 310, which has,.
As an example, when in the different marginal zone gas compartments 710, it is described when the type of the reaction gas is identical
One of concentration, flow, speed and direction of reaction gas or combination are different；Or the different marginal zone gas compartment 710
In, the type of the reaction gas is different, different control areas is formed with the fringe region in the wafer 310, thus right
The fringe region of the wafer 310 carries out different control, and the fringe region of the wafer 310 is finally made to reach uniform etching
Rate.
As an example, the dry etching equipment further includes and the top electrode lower electrode disposed in parallel, the lower electricity
Pole further includes cantilever 210, and the cantilever 210 is located at the lower section of the marginal zone gas compartment 710 in the marginal zone 413, and
The projected area of the marginal zone gas compartment 710 is greater than the projected area of the cantilever 210.
Specifically, as shown in figure 3, when the vacuum pump 510 is evacuated, due to including in the dry etching equipment
There is the cantilever 210, the cantilever 210 can stop the operation of the reaction gas, so that the fringe region of the wafer 310 goes out
The existing operating path 610, the operating path 610 is asymmetric, therefore causes the etching speed of the fringe region of the wafer 310
Rate is uneven, causes the fringe region of the wafer 310 to etch uneven.Therefore, on the side of the top of the cantilever 210
In edge area 413, setting projected area is greater than the marginal zone gas compartment 710 of the projected area of the cantilever 210, can be to described
Marginal zone gas compartment 710 is individually controlled, to compensate the reaction gas due to caused by the cantilever 210 in the crystalline substance
The problem of fringe region of circle 310 is unevenly distributed.
As an example, as shown in figure 4, the marginal zone 413 is divided into 10 marginal zone gas compartments 710, and it is described
The projected area of marginal zone gas compartment 710 is greater than the projected area of the cantilever 210.
Specifically, the projected area of the cantilever 210 accounts for about the 1/12 of the marginal zone 413, and therefore, in the present embodiment,
The marginal zone 413 is divided into 10 marginal zone gas compartments 710, and the projected area of the marginal zone gas compartment 710 is big
In the projected area of the cantilever 210, in order to compensate the reaction gas due to caused by the cantilever 210 in the crystalline substance
The problem of fringe region of circle 310 is unevenly distributed.
As an example, the type of the reaction gas can be different in the different marginal zone gas compartments 710, it is located at
The reaction gas in the marginal zone gas compartment 710 of 210 top of cantilever is big to the etch rate of the wafer 310
The reaction gas in the adjacent marginal zone gas compartment 710 to the etch rate of the wafer 310, with compensation due to
The reaction gas caused by the cantilever 210 is the problem of the fringe region of the wafer 310 is unevenly distributed.
Specifically, in the different marginal zone gas compartments 710, when the type difference for the reaction gas being passed through,
It can be by increasing such as O in the marginal zone gas compartment 710 being located above the cantilever 2102, it is located at the cantilever to improve
The etch rate of the fringe region of the wafer 310 near 210, it is described anti-due to caused by the cantilever 210 to compensate
Answer gas the problem of the fringe region of the wafer 310 is unevenly distributed, so that the fringe region of the wafer 310 has generally
In equal etch rate.
As an example, the type of the reaction gas can also be identical in the different marginal zone gas compartments 710, it is located at
The flow of the reaction gas in the marginal zone gas compartment 710 of 210 top of cantilever is greater than the adjacent edge
The range of the flow of the reaction gas in area's gas compartment 710 is 0.1~2sccm.
Specifically, when in the different marginal zone gas compartments 710, when the type for the reaction gas being passed through is identical,
Can by adjust one of concentration, flow, speed and direction of the reaction gas in the marginal zone gas compartment 710 or
Combination is unevenly distributed with compensating the reaction gas due to caused by the cantilever 210 in the fringe region of the wafer 310
Even problem, so that it is generally in equal etch rate that the fringe region of the wafer 310, which has,.In the present embodiment, pass through adjusting
The flow of the reaction gas in the marginal zone gas compartment 710, so that being located at the reaction gas of 210 top of cantilever
The 1sccm of flow of the flow of body beyond the reaction gas in the adjacent marginal zone gas compartment 710, compared with other tune
The method for saving the reaction gas convenient for operation, while can reduce cost.In another embodiment, the edge is also adjusted
The concentration of one of concentration, speed and direction of the reaction gas in area's gas compartment 710 or the reaction gas, stream
Amount, speed and the combination in direction, to compensate the reaction gas due to caused by the cantilever 210 in the wafer 310
The problem of fringe region is unevenly distributed, so that it is generally in equal etch rate that the fringe region of the wafer 310, which has, herein
With no restriction.
In conclusion the distribution and each marginal zone gas of adjusting of dry etching equipment of the invention by marginal zone gas compartment
Reaction gas in room makes the fringe region of wafer have uniform etch rate, so that when pumping, the fringe region of wafer
Reaction gas is evenly distributed, the etch rate of the fringe region of wafer be generally in it is identical, the etching for improving the fringe region of wafer is equal
Even property；It is located at the reaction gas of center, middle area and marginal zone by adjusting, so that the surface of wafer has generally in equal
Etch rate, to improve the quality of the wafer of preparation.So the present invention effectively overcomes various shortcoming in the prior art and has
High industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (14)
1. a kind of dry etching equipment, which is characterized in that the dry etching equipment includes:
Gas supply part, the gas supply part are located in the top electrode of the dry etching equipment, are arranged in parallel with wafer, institute
The lower surface area for stating gas supply part is not less than the upper surface area of the wafer；The gas supply part from-inner-to-outer is successively
It including center, surrounds the middle area of the center and surrounds the marginal zone of the middle area, wherein the edge Division
For at least two edges area gas compartment, the marginal zone gas compartment runs through the marginal zone；By adjusting the gas supply part
Reaction gas in each region makes the wafer have uniform etch rate.
2. dry etching equipment according to claim 1, it is characterised in that: the pattern of the marginal zone includes annular, institute
The pattern for stating marginal zone gas compartment includes sector.
3. dry etching equipment according to claim 2, it is characterised in that: the width of the marginal zone and the gas supply
Range to the width ratio in portion is 1/8~1/4.
4. dry etching equipment according to claim 1, it is characterised in that: the middle area and the marginal zone have phase
Same width.
5. dry etching equipment according to claim 1, it is characterised in that: the center and middle area respectively further comprise
Multiple gas compartments.
6. dry etching equipment according to claim 1, it is characterised in that: the marginal zone includes N number of marginal zone
Gas compartment, wherein 3≤N≤15.
7. dry etching equipment according to claim 1, it is characterised in that: the type of the reaction gas include oxygen,
Carbon tetrafluoride, perfluoroethane, perfluoropropane, octafluorocyclobutane, hexachlorobutadiene, octafluoro cyclopentene, Nitrogen trifluoride and argon gas institute
Form one or more of group.
8. dry etching equipment according to claim 1, it is characterised in that: the method for adjusting the reaction gas includes pair
One of type, concentration, flow, speed and the adjusting in direction of the reaction gas or combination.
9. dry etching equipment according to claim 1, it is characterised in that: in the different marginal zone gas compartments, institute
The type for stating reaction gas is same or different.
10. dry etching equipment according to claim 1, it is characterised in that: side described in the marginal zone gas compartment equal part
Edge area.
11. dry etching equipment according to claim 1, it is characterised in that: the dry etching equipment further includes and institute
Top electrode lower electrode disposed in parallel is stated, the lower electrode further includes cantilever, and the cantilever is located at the marginal zone gas compartment
Lower section.
12. dry etching equipment according to claim 11, it is characterised in that: in the different marginal zone gas compartments,
The type of the reaction gas is different, and the reaction gas in the marginal zone gas compartment above the cantilever is to institute
The etch rate for stating wafer is greater than the reaction gas in the adjacent marginal zone gas compartment to the etching speed of the wafer
Rate.
13. dry etching equipment according to claim 11, it is characterised in that: in the different marginal zone gas compartments,
The type of the reaction gas is identical, the stream of the reaction gas in the marginal zone gas compartment above the cantilever
The range that amount is greater than the flow of the reaction gas in the adjacent marginal zone gas compartment is 0.1~2sccm.
14. dry etching equipment according to claim 1, it is characterised in that: the dry etching equipment includes plasma
Body etching apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810877126.5A CN109065432A (en) | 2018-08-03 | 2018-08-03 | A kind of dry etching equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810877126.5A CN109065432A (en) | 2018-08-03 | 2018-08-03 | A kind of dry etching equipment |
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| CN109065432A true CN109065432A (en) | 2018-12-21 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029254A (en) * | 2019-12-26 | 2020-04-17 | 苏州科阳光电科技有限公司 | Dry etching method |
| CN111933547A (en) * | 2020-07-07 | 2020-11-13 | 长江存储科技有限责任公司 | Wafer surface film layer deposition device, deposition method and semiconductor device |
| CN112951696A (en) * | 2019-12-10 | 2021-06-11 | 中微半导体设备(上海)股份有限公司 | Plasma processing equipment, gas baffle plate structure thereof and plasma processing method |
| CN113451168A (en) * | 2020-04-14 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | Dry etching gas control system |
| CN113818005A (en) * | 2020-06-19 | 2021-12-21 | 拓荆科技股份有限公司 | Film preparation equipment and method |
| CN113851402A (en) * | 2021-05-31 | 2021-12-28 | 华灿光电(苏州）有限公司 | Tray for plasma etcher and plasma etcher |
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| CN111933547A (en) * | 2020-07-07 | 2020-11-13 | 长江存储科技有限责任公司 | Wafer surface film layer deposition device, deposition method and semiconductor device |
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| CN113851402A (en) * | 2021-05-31 | 2021-12-28 | 华灿光电(苏州）有限公司 | Tray for plasma etcher and plasma etcher |
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Application publication date: 20181221 |