CN220106476U

CN220106476U - Vacuum cavity for dry etching product

Info

Publication number: CN220106476U
Application number: CN202321038481.6U
Authority: CN
Inventors: 廖晋廷; 蒋源峰; 郭明苍
Original assignee: Advanced Semiconductor Engineering Inc
Current assignee: Advanced Semiconductor Engineering Inc
Priority date: 2023-05-04
Filing date: 2023-05-04
Publication date: 2023-11-28
Anticipated expiration: 2033-05-04

Abstract

The utility model provides a vacuum cavity for dry etching a product, which comprises the following steps: a mask, the mask comprising: an evacuation zone disposed away from a corner of the product and configured to evacuate the vacuum cavity; and a non-pumping region having a first portion disposed adjacent a corner of the product relative to the pumping region and configured not to evacuate the vacuum chamber. The vacuum cavity provided by the utility model improves the uniformity of dry etching of the product.

Description

Vacuum cavity for dry etching product

Technical Field

Embodiments of the present utility model relate to vacuum chambers, and more particularly, to a vacuum chamber for dry etching a product.

Background

One of the major problems of the panel-level fan-out packaging technology is substrate warpage, because warpage occurs in the production process of the panel-level fan-out semiconductor device product, the warpage is generally temporarily restrained by using a vacuum adsorption method, but unlike other processes using a vacuum adsorption method, in a vacuum (Descum) process of plasma ashing, a vacuum environment cannot use a vacuum adsorption method any more, so that a clamp is commonly used to avoid the problems of uneven plasma distribution and arc discharge damage (arcing) caused by substrate warpage, and thus the warpage is temporarily restrained by pressing down the clamp.

However, in the existing vacuum chamber, which has a vent hole around the periphery thereof, in order to control the air pressure of the vent hole, see fig. 1A to 1C, a mask 10 having about 6 to 7 through holes 11 is generally designed on a side wall 1s of the vacuum chamber 1, i.e., a pump path opening of a vacuum pump for evacuating, and a sectional area of a single through hole 11, i.e., a sectional area in a section along a vertical center line A-A and a horizontal center line a '-a' of the corresponding through hole 11, see fig. 1B, is about 1000mm ² -1300mm ² Such as about 1200mm ² . The large area of the single through hole 11 makes the elasticity lower in the control of the surrounding air pressure, the influence range of adjusting the single hole is large, the adverse local uniformity control is not good, and referring to fig. 1B and 1C, in the vacuum cavity 1, when etching the product 13, the clamp 12 is usually used for the product 13 arranged on the bottom 1d of the vacuum cavity 1, when using the clamp 12, the clamp forms a concave-convex structure R (the clamp 12 is convex, the product 13 is concave) on the surface of the flat product 13, compared with the corners T1-T4, T12-T17 and T21-T71 of the concave-convex structure R belong to the tips, the accumulated charges are easy to be obvious, and therefore, the four corners T1, T2, T3 and T4 are easy to attract the plasma to gather, so that the etching rate beside the clamp 12 is high, and the etching amount is high, and the etching rate of the surface of the product 13 is uneven. At present, the problem is not effectively improved.

Disclosure of Invention

In order to solve the above-mentioned related art problems, the present utility model achieves control of the etching rate of dry etching by adjusting the plasma density of a specific region (such as a corner) to solve the problem of non-uniformity of the etching rate caused by plasma accumulation at the specific region.

The utility model provides a vacuum cavity for dry etching a product, which comprises the following steps: a mask, the mask comprising: an evacuation zone disposed away from a corner of the product and configured to evacuate the vacuum cavity; and a non-pumping region having a first portion disposed adjacent a corner of the product relative to the pumping region and configured not to evacuate the vacuum chamber.

In some embodiments, the pumping region has a plurality of through holes.

In some embodiments, the plurality of vias is arranged in a non-matrix manner.

In some embodiments, the non-pumping region has a plurality of through holes that are occluded.

In some embodiments, the vacuum chamber further comprises: and a variable member for changing the areas of the pumping region and the non-pumping region by blocking the through holes in the pumping region or opening the through holes in the non-pumping region.

In some embodiments, the vacuum chamber further comprises: a control configured to control the variable to switch between the occlusion and the opening.

In some embodiments, the change in area of the vented zone and the non-vented zone is complementary.

In some embodiments, the ratio of the area of any single via to the area of the mask is between 0.25% and 5.7% for the plurality of vias of the pumping region and the plurality of vias of the non-pumping region.

In some embodiments, the ratio of the area of any single via to the area of the mask is between 0.5% and 1% for the plurality of vias of the pumping region and the plurality of vias of the non-pumping region.

In some embodiments, a mask is disposed on a sidewall of the vacuum chamber.

In some embodiments, the mask is disposed at a pump path opening of a vacuum pump for evacuating.

In some embodiments, the first portions of the non-extraction regions are disposed on opposite sides of the extraction region, respectively, and the non-extraction regions further comprise second portions disposed above the extraction region.

In some embodiments, the first portion and the second portion of the non-pumping region each have a plurality of through holes that are occluded.

In some embodiments, the pumping region is a plate body having a plurality of through holes, and the non-pumping region is a closed plate body having no through holes.

In some embodiments, the product is a rectangular plate, and the corners are four right angles of the rectangular plate.

In some embodiments, the product is a panel-level fan-out semiconductor device.

In some embodiments, the plurality of through holes in the pumping region and the plurality of through holes in the non-pumping region together form a rectangular array of 2 rows and columns.

In some embodiments, the product is secured at the bottom of the vacuum chamber and the mask is above the top surface of the product.

In some embodiments, the product is secured by a clamp.

In some embodiments, the plurality of through holes in the pumping region and the plurality of through holes in the non-pumping region are uniformly distributed.

In summary, in the vacuum chamber provided by the present utility model, the distribution of the through holes in the pumping area in the mask is adjusted to further control the plasma density, thereby solving the problem of uneven etching product surface rate.

Drawings

The various aspects of the utility model are best understood from the following detailed description when read in connection with the accompanying drawings. It should be noted that the various components are not drawn to scale according to standard practice in the industry. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

Fig. 1A to 1B are a mask and a vacuum chamber according to the prior art.

Fig. 1C shows a perspective view of a vacuum chamber provided with a prior art mask.

Fig. 2-3 are masks according to some embodiments of the utility model.

Fig. 4-5 are vacuum chambers according to some embodiments of the utility model.

Fig. 6 shows a perspective view of a vacuum chamber provided with a mask according to an embodiment of the utility model.

Detailed Description

The following disclosure provides many different embodiments, or examples, for implementing different features of the utility model. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to limit the utility model.

The utility model provides a uniform pumping effect by arranging the mask with a plurality of compact and tiny openings at the pump path opening of the side wall of the dry etching vacuum cavity, thereby achieving uniform plasma distribution and further ensuring uniform etching rate.

Referring specifically to fig. 2-4, there is provided a vacuum chamber 1000 (see fig. 4) for dry etching a product 103 (see fig. 4), and specifically, referring to fig. 2-4, the vacuum chamber 1000 includes a mask 100, the mask 100 comprising: a pumping zone 101A disposed away from corners of the product 103 (such as corners T1', T2', T3', and T4') and configured to pump vacuum from the vacuum chamber 1000; and a non-pumping region 101B having a first portion 101B-1 disposed adjacent to a corner T1'-T4' of the product relative to the pumping region 101A and configured not to evacuate the vacuum chamber 1000. In some embodiments, the pumping area 101A has a plurality of through holes 101At. Further, as can be seen from fig. 4, the plurality of through holes 101At are arranged in a matrix, but the plurality of through holes 101At may be arranged in a non-matrix. In some embodiments, the through holes 101At may be arranged as desired, and may be arranged in any suitable shape. In some embodiments, the non-pumping region 101B has a plurality of through holes 101Bt that are blocked, and as such, as can be seen from fig. 4, the plurality of through holes 101Bt are arranged in a matrix, but the plurality of through holes 101Bt may also be arranged in a non-matrix. In some embodiments, the through holes 101Bt may be arranged as desired, and may be arranged in any suitable shape. In some embodiments, the first portions 101B-1 of the non-pumping region 101B are disposed on opposite sides of the pumping region 101B, respectively, and the non-pumping region 101B further includes a second portion 101B-2 disposed above the pumping region 101B. In some embodiments, as shown in FIGS. 3 and 4, the first portion 101B-1 and the second portion 101B-2 of the non-pumping region 101B each have a plurality of through holes 101Bt that are occluded. In other embodiments, the pumping region 101A is a plate body having a plurality of through holes 101At, and the non-pumping region 101B is a closed plate body without through holes 101Bt. In the present utility model, as shown in fig. 3, the plurality of through holes 101At in the pumping region 101A and the plurality of through holes 101Bt in the non-pumping region 101B together form a rectangular array of 2 rows and columns, and the plurality of through holes 101At in the pumping region 101A and the plurality of through holes 101Bt in the non-pumping region 101B are uniformly distributed.

Further, as can be seen in fig. 4, the product 103 is a rectangular plate, and the corners of the product 103 are four right angles T1', T2', T3 'and T4' of the rectangular plate. In some embodiments, the article 103 is a panel-level fan-out semiconductor device. In some embodiments, the mask 100 is made of a ceramic material and a surface anodized metal material (i.e., metal in the metal material is not exposed), teflon, or the like, such as, but not limited to, a surface anodized copper material or a surface anodized iron material, or the like.

In some embodiments, with further reference to fig. 4, the vacuum chamber 1000 further includes a variable piece 104, the variable piece 104 changing the areas of the pumping region 101A and the non-pumping region 101B by either shielding the through hole 101At in the pumping region 101A or opening the through hole 101Bt in the non-pumping region 101B. Specifically, referring to fig. 2 and 3, in fig. 2, the mask 100 is entirely a suction area 101A having a plurality of through holes 101At, and in this case, the area of the suction area 101A is the area of the mask 100. Whereas in fig. 3, the partial suction region 101A is changed to the non-suction region 101B by shielding the through hole 101At in the suction region 101A by the variable member 104, in this case, the area of the suction region 101 is the area of the region surrounded by the tangential lines (the tangential lines C-C, C-D and D-D in fig. 3) of the outermost through hole 101Aot, which are respectively parallel to the vertical center line B-B and the horizontal center line B '-B' of the corresponding through hole 101At, whereas the non-suction region 101B is the area of the mask 100 minus the area of the suction region 101, in this embodiment, the area of the mask 100 is the area of the mask 100 in a section along the vertical center line B-B and the horizontal center line B '-B' of the corresponding through hole 101At/101 Bt. Thus, the area variations of the extraction region 101A and the non-extraction region 101B are complementary, i.e. the amount of decrease in extraction region 101A is the same as the amount of increase in non-extraction region 101B.

In some embodiments, the variable member 104 may be a sheet of metal, such as, but not limited to, a sheet of copper, copper-aluminum alloy, or the like. Further, the vacuum chamber 1000 further includes: a control (not shown) configured to control the variable 104 to switch between the occlusion being open. In some embodiments, the control is a control commonly used in the art, or may be controlled using a butterfly method commonly used in the art. In the present utility model, the control member is only required to control the variable member 104 to switch between the opening of the shutter.

In some embodiments, for the plurality of through holes 101At of the pumping region 101A and the plurality of through holes 101Bt of the non-pumping region 101B, the ratio of the area of any single through hole 101At/101Bt to the area of the mask 100 is between 0.25% and 5.7%, preferably between 0.5% and 1%. In the present embodiment, the area of the single through hole 101At/101Bt is the cross-sectional area in the cross-section along the vertical center line B-B and the horizontal center line B '-B' of the corresponding through hole 101At/101Bt, and the area of the mask 100 is also the area of the mask 100 in the cross-section.

With further reference to fig. 5 and 6, fig. 5 and 6 show perspective views of the vacuum chamber 1000 of the present utility model, and as can be seen from fig. 5 and 6, the mask 100 is disposed on a sidewall 1000s of the vacuum chamber 1000. Specifically, referring to fig. 5, a mask 100 is provided at a pump path opening 105 (shown in phantom) of a vacuum pump for evacuating. In some embodiments, as further shown in fig. 5, the product 103 is fixed at the bottom 1000d of the vacuum chamber 1000, and the mask 100 is above the top surface of the product 103. In some embodiments, the product 103 is secured by the clamp 102 (the clamp 102 is secured at the edge of the product 103). In some embodiments, the vacuum pump is a vacuum pump commonly used in the art, and the non-clamp 102 is also a clamp commonly used in the art, and will not be described in detail herein.

In the present utility model, referring to fig. 5 and 6, at a pump path opening 105 (shown in dotted line) of a vacuum pump for evacuating a vacuum chamber 1000 of dry etching, that is, on a sidewall 1000s of the vacuum chamber 1000, a mask 100 is provided, and the present utility model is achieved by redesigning the size and distribution of through holes 101At/101Bt for the mask 100 to 20 or more (see fig. 2 to 4), the cross-sectional area of any single through hole 101At/101Bt is about 200-400mm ² (such as about 300mm ² ) The mask 100 has a small hole array formed by a plurality of small holes thereon, and the small hole array provides a uniform pumping effect, so that adjacent areas have approximately the same gas molecules.

Specifically, under a certain vacuum condition, in the present utility model, under a vacuum condition having a vacuum degree of 0.15 torr to 0.2 torr, the region near the non-pumping region 101B (in the present utility model, near the corners T1', T2', T3 'and T4') is pumped down by the shielded plurality of through holes 101Bt of the non-pumping region 101B, the gas pressure of the corresponding region is increased, the corresponding plasma density is increased, and the mean free path of plasma ions is decreased to decrease the etching rate of the region. In contrast, the plasma density is still lower in the areas near the unmasked pumping region 101A, thereby making the etch rate uniform on the surface of the product 103. Further, the through holes 101At may be blocked or opened according to the plasma density requirement to achieve a differential plasma density.

Further, in the present utility model, the mask 100 may be provided as a ceramic material, and by locating the through holes 101At of the pumping area 101A on the mask 100, the through holes 101At may be provided on the mask 100 by etching or the like commonly used in the art, and the other areas are closed plate bodies to form the non-pumping area 101B. When the appearance of the products 103 is different, so that the clamps 102 are different and the position of the through hole 101At of the air pumping area 101A cannot be determined, the design of the through hole 101At can be directly controlled by the machine parameters in cooperation with hardware and software, and can be adjusted in real time according to the etching result of the structure of the different products 103, for example, the position of the through hole 101At can be adjusted through corresponding tests (for example, adjusting corresponding control members, or using corresponding programs (rules) known and used in the art), so as to determine the air pumping area 101A and the non-air pumping area 101B.

The effect of the inventive mask and the prior art mask on the etch rate is compared as follows.

Referring to FIG. 1B, in using a mask 10 made of a ceramic material (having 7 through holes 11, the cross-sectional area of a single through hole 11 is about 1200mm ² ) When the panel-level fan-out semiconductor device product 13 is subjected to dry etching, after the power supply of the dry etched vacuum cavity 1 is electrified, the introduced etching gas is excited into plasma, and the clamp 12 protrudes out of the surface of the product 13, so that tips are more obviously formed at the corners T1, T2, T3 and T4, and the plasma is easily collected, thereby improving the etching efficiency. The etching amounts of the respective portions of the product 13 are shown in table 1 below:

TABLE 1 etching amount of various regions of the product 12 shown in FIG. 1B using the existing mask 10

In table 1, min represents a minimum value and Max represents a maximum value.

As can be seen from the above table, for the existing mask 10, the product 12:

the average etching amount Et at the corners T1, T2, T3, and T4 is:

the average etching amount Ec at the central areas C1, C2, C3, C4, C5, C6, C7, C8, C9 is:

the difference in etching amount is:

the overall etch non-uniformity is: (maximum (T3) -minimum (C1))/2-fold average, i.e.

In the above-described global etching unevenness, the average value refers to an arithmetic average value of all regions including: central regions C1, C2, C3, C4, C5, C6, C7, C8, C9; and edge regions T12-T14, T15-T17, T21-T41, T51-T71 and corners T1, T2, T3 and T4 in the edge regions.

Referring to FIG. 4, under the same conditions, using the mask 100 made of a ceramic material of the present utility model (the through holes 101At/101Bt are 40, the cross-sectional area of any single through hole 101At/101Bt is about 300 mm) ² ) When the dry etching is performed, after the power supply of the vacuum cavity 1000 for dry etching is energized, the introduced etching gas is excited into plasma, and although the clamp 102 is protruded from the surface of the product 103, so that the plasma is easily collected at the corners T1', T2', T3 'and T4', the air extraction efficiency at the corners T1', T2', T3 'and T4' is reduced through the shielded through holes 101Bt of the non-air extraction area 101B, the air pressure at the corners T1', T2', T3 'and T4' is increased, the corresponding plasma density is increased, the mean free path of plasma ions is reduced to be insufficient to provide kinetic energy for bombarding the surface of the product 103, and the etching rate at the corners T1', T2', T3 'and T4' is reduced, so that the etching rate of the surface of the product 103 is uniform, and the non-uniformity of etching of the product 103 is reduced. The etching amounts of the respective portions of the product 103 are shown in table 2 below:

TABLE 1 etching amount of various regions of the product 102 shown in FIG. 4 using the existing mask 100

In table 1, min represents a minimum value and Max represents a maximum value.

As can be seen from the above table, for the existing mask 100, the product 102:

the average etching amount Et ' at the corners T1', T2', T3', and T4' is:

the average etching amount Ec 'at the central areas C1', C2', C3', C4', C5', C6', C7', C8', C9' is:

the difference in etching amount is:

the overall etch non-uniformity is: (maximum (T4 ') -minimum (C1'))/2-fold average, i.e.

In the above-described global etching unevenness, the average value refers to an arithmetic average value of all regions including: central regions C1', C2', C3', C4', C5', C6', C7', C8', C9'; and edge regions T12'-T14', T15'-T17', T21'-T41', T51'-T71' and corners T1', T2', T3 'and T4' in the edge regions.

In summary, after using the mask 100 of the present utility model, the masked plurality of through holes 101Bt of the non-pumping region 101B are provided for the corners T1', T2', T3 'and T4' with the highest etching rate, so that the average etching amounts of the corners (T1 '-T4') and the central regions (C1-C9) are different from the original onesReduced to->The overall etch non-uniformity was improved from 10.8% to 7.3%.

In summary, by using the vacuum chamber 1000 provided by the present utility model, a uniform pumping effect is provided by redesigning the size and distribution of the through holes 101At/101Bt for the mask 100, and thus the corresponding plasma density is controlled such that the difference between the etching amounts of the corners and the center region of the product 103 is smaller thanAnd the average etching quantity difference is less than 10% of the whole etching non-uniformity, so that the etching uniformity of the product 103 is improved.

In the above scheme, the vacuum condition used is a vacuum condition having a vacuum degree of 0.15 torr-0.2 torr, and under a vacuum condition of about 0.01 torr, the plasma density at the corner can be reduced by increasing the pumping efficiency at the corner (such as T1 '-T4'), and at this time, although the mean free path of the plasma ions is increased, the probability of the plasma particles striking the surface of the product (such as product 103) is reduced, thereby decreasing the etching rate at the corner. This is different from the vacuum condition of 0.15 torr-0.2 torr in that the suction area 101A and the non-suction area 101B of the mask (such as the mask 100) need to be adjusted according to the vacuum.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present utility model. Those skilled in the art will appreciate that they may readily use the present utility model as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the utility model, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the utility model.

Claims

1. A vacuum chamber for dry etching a product, comprising:

a mask, the mask comprising:

an evacuation zone disposed away from a corner of the product and configured to evacuate the vacuum cavity; and

a non-pumping region having a first portion disposed adjacent a corner of the product relative to the pumping region and configured not to evacuate the vacuum chamber.

2. The vacuum chamber for dry etching a product according to claim 1, wherein the pumping area has a plurality of through holes.

3. The vacuum chamber for dry etching a product according to claim 2, wherein the plurality of through holes are arranged in a non-matrix.

4. The vacuum chamber for dry etching a product according to claim 2, wherein the non-pumping area has a plurality of through holes that are blocked.

5. The vacuum chamber for dry etching a product as set forth in claim 4, further comprising:

and a variable member for changing the areas of the pumping region and the non-pumping region by blocking the through holes in the pumping region or opening the through holes in the non-pumping region.

6. The vacuum chamber for dry etching a product as set forth in claim 5, further comprising:

a control configured to control the variable to switch between the occlusion and the opening.

7. The vacuum chamber of claim 5, wherein the areas of the pumping area and the non-pumping area are complementary.

8. The vacuum chamber of claim 4, wherein a ratio of an area of any single via to an area of the mask is between 0.25% and 5.7% for the plurality of vias of the pumping region and the plurality of vias of the non-pumping region.

9. The vacuum chamber of claim 4, wherein a ratio of an area of any single via to an area of the mask is between 0.5% and 1% for the plurality of vias of the pumping region and the plurality of vias of the non-pumping region.

10. The vacuum chamber for dry etching a product according to claim 1, wherein the mask is provided on a sidewall of the vacuum chamber.