CN113439334A - 显示基板及其制备方法、显示装置 - Google Patents
显示基板及其制备方法、显示装置 Download PDFInfo
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- CN113439334A CN113439334A CN202080000076.8A CN202080000076A CN113439334A CN 113439334 A CN113439334 A CN 113439334A CN 202080000076 A CN202080000076 A CN 202080000076A CN 113439334 A CN113439334 A CN 113439334A
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- light
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- 239000000758 substrate Substances 0.000 title claims abstract description 355
- 238000002360 preparation method Methods 0.000 title description 4
- 239000000463 material Substances 0.000 claims abstract description 72
- 230000001105 regulatory effect Effects 0.000 claims abstract description 27
- 230000031700 light absorption Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 66
- 239000003292 glue Substances 0.000 claims description 26
- 239000011358 absorbing material Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000010146 3D printing Methods 0.000 claims description 12
- 238000010521 absorption reaction Methods 0.000 claims description 9
- 238000001746 injection moulding Methods 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 238000005507 spraying Methods 0.000 claims description 6
- 238000002310 reflectometry Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 43
- 239000010409 thin film Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- -1 Polyethylene terephthalate Polymers 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Led Device Packages (AREA)
Abstract
一种显示基板,包括:衬底、设置在所述衬底一侧的多个发光器件,以及光线调节层。所述多个发光器件相互间隔设置。所述光线调节层中的至少一部分位于所述多个发光器件之间的间隙内,以使所述多个发光器件中的至少一个发光器件的侧壁被所述光线调节层包围;所述光线调节层的材料包括吸光材料;所述光线调节层被配置为,对射向至所述光线调节层的光线进行吸收。
Description
PCT国内申请,说明书已公开。
Claims (18)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2020/073961 WO2021147064A1 (zh) | 2020-01-23 | 2020-01-23 | 显示基板及其制备方法、显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113439334A true CN113439334A (zh) | 2021-09-24 |
CN113439334B CN113439334B (zh) | 2024-03-26 |
Family
ID=76992720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202080000076.8A Active CN113439334B (zh) | 2020-01-23 | 2020-01-23 | 显示基板及其制备方法、显示装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20220052225A1 (zh) |
EP (1) | EP4095914A4 (zh) |
JP (1) | JP2023519040A (zh) |
KR (1) | KR20220131491A (zh) |
CN (1) | CN113439334B (zh) |
TW (2) | TW202310392A (zh) |
WO (1) | WO2021147064A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024108553A1 (zh) * | 2022-11-25 | 2024-05-30 | 京东方科技集团股份有限公司 | 显示面板以及显示装置 |
Citations (7)
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CN106199771A (zh) * | 2014-12-19 | 2016-12-07 | 财团法人工业技术研究院 | 光学薄膜及显示器装置 |
CN106531770A (zh) * | 2016-12-23 | 2017-03-22 | 京东方科技集团股份有限公司 | 一种有机电致发光显示面板、其制作方法及显示装置 |
CN107359175A (zh) * | 2017-07-25 | 2017-11-17 | 上海天马微电子有限公司 | 微发光二极管显示面板和显示装置 |
US20180102348A1 (en) * | 2016-10-06 | 2018-04-12 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method of producing an optoelectronic component |
CN108682312A (zh) * | 2018-05-12 | 2018-10-19 | 汕头超声显示器技术有限公司 | 一种led阵列装置的制造方法 |
CN109671365A (zh) * | 2019-01-30 | 2019-04-23 | 京东方科技集团股份有限公司 | Micro-LED显示基板及其制作方法、显示装置 |
US20190244938A1 (en) * | 2018-02-06 | 2019-08-08 | Lumens Co., Ltd. | Micro-led display panel |
Family Cites Families (15)
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US6630786B2 (en) * | 2001-03-30 | 2003-10-07 | Candescent Technologies Corporation | Light-emitting device having light-reflective layer formed with, or/and adjacent to, material that enhances device performance |
KR100986518B1 (ko) * | 2008-06-16 | 2010-10-07 | 엘지이노텍 주식회사 | 반도체 발광소자 |
JP5622494B2 (ja) * | 2010-09-09 | 2014-11-12 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
JP6186904B2 (ja) * | 2013-06-05 | 2017-08-30 | 日亜化学工業株式会社 | 発光装置 |
JP6269702B2 (ja) * | 2015-11-30 | 2018-01-31 | 日亜化学工業株式会社 | 発光装置の製造方法 |
CN107994109A (zh) * | 2016-10-27 | 2018-05-04 | 佛山市国星光电股份有限公司 | 一种cob显示模组及其制造方法 |
KR20180086003A (ko) * | 2017-01-20 | 2018-07-30 | 엘지전자 주식회사 | 반도체 발광소자를 이용한 디스플레이 장치 |
WO2019009033A1 (ja) * | 2017-07-03 | 2019-01-10 | シャープ株式会社 | 光源装置及び発光装置 |
GB2566312B (en) * | 2017-09-08 | 2021-12-29 | Barco Nv | Method and system for reducing reflection of ambient light in an emissive display |
KR102650950B1 (ko) * | 2017-09-29 | 2024-03-26 | 서울반도체 주식회사 | 발광 소자 및 그것을 갖는 표시 장치 |
US11410918B2 (en) * | 2017-11-15 | 2022-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making an integrated circuit package including an integrated circuit die soldered to a bond pad of a carrier |
KR102457191B1 (ko) * | 2018-05-16 | 2022-10-20 | (주)포인트엔지니어링 | 마이크로 led 전사 시스템 |
JP6753452B2 (ja) * | 2018-11-30 | 2020-09-09 | 日亜化学工業株式会社 | 発光モジュール |
KR20200070901A (ko) * | 2018-12-10 | 2020-06-18 | 삼성전자주식회사 | 디스플레이 모듈, 이를 포함하는 디스플레이 장치 및 디스플레이 모듈 제조 방법 |
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-
2020
- 2020-01-23 KR KR1020217041908A patent/KR20220131491A/ko not_active Application Discontinuation
- 2020-01-23 CN CN202080000076.8A patent/CN113439334B/zh active Active
- 2020-01-23 JP JP2021576247A patent/JP2023519040A/ja active Pending
- 2020-01-23 EP EP20886175.7A patent/EP4095914A4/en active Pending
- 2020-01-23 US US17/291,829 patent/US20220052225A1/en active Pending
- 2020-01-23 WO PCT/CN2020/073961 patent/WO2021147064A1/zh unknown
- 2020-12-24 TW TW111143338A patent/TW202310392A/zh unknown
- 2020-12-24 TW TW109145940A patent/TWI787693B/zh active
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Publication number | Priority date | Publication date | Assignee | Title |
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CN106199771A (zh) * | 2014-12-19 | 2016-12-07 | 财团法人工业技术研究院 | 光学薄膜及显示器装置 |
US20180102348A1 (en) * | 2016-10-06 | 2018-04-12 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method of producing an optoelectronic component |
CN106531770A (zh) * | 2016-12-23 | 2017-03-22 | 京东方科技集团股份有限公司 | 一种有机电致发光显示面板、其制作方法及显示装置 |
CN107359175A (zh) * | 2017-07-25 | 2017-11-17 | 上海天马微电子有限公司 | 微发光二极管显示面板和显示装置 |
US20190244938A1 (en) * | 2018-02-06 | 2019-08-08 | Lumens Co., Ltd. | Micro-led display panel |
CN108682312A (zh) * | 2018-05-12 | 2018-10-19 | 汕头超声显示器技术有限公司 | 一种led阵列装置的制造方法 |
CN109671365A (zh) * | 2019-01-30 | 2019-04-23 | 京东方科技集团股份有限公司 | Micro-LED显示基板及其制作方法、显示装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024108553A1 (zh) * | 2022-11-25 | 2024-05-30 | 京东方科技集团股份有限公司 | 显示面板以及显示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN113439334B (zh) | 2024-03-26 |
US20220052225A1 (en) | 2022-02-17 |
TW202310392A (zh) | 2023-03-01 |
TWI787693B (zh) | 2022-12-21 |
WO2021147064A1 (zh) | 2021-07-29 |
KR20220131491A (ko) | 2022-09-28 |
EP4095914A4 (en) | 2023-01-25 |
EP4095914A1 (en) | 2022-11-30 |
TW202129949A (zh) | 2021-08-01 |
JP2023519040A (ja) | 2023-05-10 |
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