TWI704546B - 顯示裝置及其製造方法 - Google Patents
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Abstract
一種顯示裝置包含基板、複數個發光件、膠體、光學膜及液晶面板。發光件位於基板的表面上,且發光件之間具有複數個間隙。膠體位於基板的表面上的間隙中,且圍繞發光件。光學膜位於膠體與發光件上方。液晶面板位於光學膜上方。
Description
本案是有關於一種顯示裝置及一種顯示裝置的製造方法。
在顯示裝置的領域中,次毫米發光二極體(Mini LED)可作為液晶螢幕的背光源。為了增加顯示裝置的亮度,可採用直下式光源取代側入式光源。次毫米發光二極體中的發光二極體晶片可藉由螢光粉來轉換其發光波長。舉例來說,藍光發光二極體晶片可藉由黃色螢光粉將藍光與黃光混合成白光。此種結合發光二極體晶片與螢光粉的模組結構之封裝方式可分為晶片直接封裝(Chip on board, COB)與晶片尺寸封裝(Chip size package, CSP)兩種。
減小顯示裝置中的混光距離雖然有助於薄化顯示裝置,但是,由於混光距離越小,液晶面板對應其下方發光二極體晶片的位置則具有較高的亮度,因此易造成顯示面板亮度不均勻的狀況發生。
本揭露之一技術態樣為一種顯示裝置。
根據本揭露一實施方式,一種顯示裝置包含基板、複數個發光件、膠體、光學膜及液晶面板。發光件位於基板的表面上,且發光件之間具有複數個間隙。膠體位於基板的表面上的間隙中,且圍繞發光件。光學膜位於膠體與發光件上方。液晶面板位於光學膜上方。
在本揭露一實施方式中,光學膜與發光件之間具有介於0mm至1mm範圍中的混光距離。
在本揭露一實施方式中,顯示裝置更包含軟性電路板。軟性電路板位於基板上且電性連接發光件。
在本揭露一實施方式中,發光件包含發光晶片以及覆蓋發光晶片的波長轉換層。
在本揭露一實施方式中,波長轉換層延伸至發光晶片的側壁,且位於發光晶片與膠體之間。
在本揭露一實施方式中,膠體包含複數個光學粒子及光學膠,其中光學粒子的材質包含矽或環氧樹脂且粒徑在5μm至10μm的範圍中,且重量百分濃度在25%至30%的範圍中,而光學膠的材質包含矽或聚甲基丙烯酸甲酯。
本揭露之一技術態樣為一種顯示裝置的製造方法。
根據本揭露一實施方式,一種顯示裝置的製造方法包含下列步驟。將複數個光學粒子與光學膠混合,以形成膠體;塗佈膠體於在基板的表面上的複數個發光件之間的複數個間隙中,使得膠體圍繞發光件;設置光學膜於膠體與發光件上方;設置液晶面板於光學膜上方。
在本揭露一實施方式中,更包含封裝複數個發光晶片與複數個波長轉換層,以形成發光件;並將發光件接合至軟性電路板。
在本揭露一實施方式中,光學粒子的材質包含矽或環氧樹脂,且光學膠的材質包含矽或聚甲基丙烯酸甲酯。
在本揭露一實施方式中,光學粒子的粒徑在5μm至10μm的範圍中,且重量百分濃度在25%至30%的範圍中。
在本揭露上述實施方式中,由於先將包含矽或環氧樹脂等材質的光學粒子與包含矽或聚甲基丙烯酸甲酯的光學膠在合適的比例下均勻混和,以形成具有光擴散功能的膠體。隨後,在基板的表面上塗佈包含光學粒子的膠體,且使膠體充分填充於發光件之間的間隙中,使得發光件之間無法發光的區域,可藉由填充的膠體而將各個發光件的光源反射出來,而形成連續的發光區域,以達到光擴散的功能。因此當混光距離減小時,仍不會導致因發光晶片的發光範圍所對應至液晶面板的區域亮度較高所產生的液晶面板亮度不均勻之狀況發生。如此一來,當混光距離減小至介於0mm至1mm的範圍中時,仍可保持液晶面板的亮度均勻性,以順利達成薄化顯示裝置的目的。
以下將以圖式揭露本揭露之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本揭露。也就是說,在本揭露部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。
第1圖繪示根據本揭露一實施方式之顯示裝置100的上視圖。第2圖繪示根據本揭露一實施方式之顯示裝置100沿線段2-2的剖面圖。參閱第2圖,顯示裝置100包含基板110、複數個發光件130、膠體140、光學膜150及液晶面板160。發光件130位於基板110的表面111上,且相鄰的發光件130之間具有複數個間隙W。膠體140位於基板110的表面111上的間隙W中,且圍繞發光件130。光學膜150位於發光件130上方。液晶面板160位於光學膜150上方。
在本實施方式中,發光件130為液晶面板160的背光源,例如為直下式光源,發光件130所提供的光線可先後通過光學膜150與液晶面板160。在無膠體140的狀態下,每一個發光件130所發出的光線均可形成一放射狀的發光範圍,並且每一個發光件130所形成的發光範圍與其相鄰的發光件130所形成的發光範圍隨著光線逐漸遠離發光件130而部分重疊。
因此,在無膠體140的狀態下,在接近發光件130處存在著兩種區域,一種為發光範圍無重疊的暗區域,而另一種為發光範圍內的重疊的亮區域,此兩種區域彼此交錯排列。
為了提升顯示裝置100的亮度均勻性與減少發光件130與光學膜150之間的混光距離d,顯示裝置100填充膠體140在基板110表面111上的發光件130之間的間隙W中,使得發光件130之間原本無法發光的區域(即間隙W)可藉由填充的膠體140而將各個發光件130的光線往液晶面板160的方向反射,以形成如第2圖所繪示之連續的發光區域170,進而達到光擴散的功能,並且薄型化顯示裝置100。
在本實施方式中,透過填充膠體140於發光件130之間的間隙W中,並減小混光距離d至介於0mm至1mm的範圍中,可將液晶面板160的亮度均勻性從無填充膠體140的30%提升至填充膠體140後的67%以上。
第3圖繪示第2圖之顯示裝置的局部放大圖。如圖所示,顯示裝置100更包含位於基板110上的軟性電路板120。軟性電路板120電性連接發光件130,以提供線路配置。每一個發光件130均包含了發光晶片132與覆蓋於發光晶片132上的波長轉換層134。在本實施方式中,基板110可為例如SUS304的金屬材質的補強基板,但並不以SUS304為限。在其他實施方式中,基板110可為硬式電路板(PCB)而省略軟性電路板120。
在本實施方式中,發光晶片132可為次毫米發光二極體晶片(Mini LED),例如藍光發光晶片,其尺寸可在100μm至200μm的範圍中,而波長轉換層134可為螢光粉,例如黃色螢光粉,但本揭露不以此為限。發光晶片132可藉由波長轉換層134來轉換其發光波長。於一實施例中,藍光發光晶片所產生的藍光可藉由黃色螢光粉轉換為白光。而本實施方式是以晶片尺寸封裝(Chip size package, CSP)的方式先將發光晶片132與波長轉換層134封裝後才接合至軟性電路板120。基板110、軟性電路板120與發光件130可視為燈板。
此外,發光件130的波長轉換層134還延伸至發光晶片132的側壁131,使得波長轉換層134的一部分位於發光晶片132與膠體140之間。這樣的設計可以使波長轉換層134同時與發光晶片132及膠體140接觸,以確保由發光晶片132之側壁131所發出的光會先經由波長轉換層134轉換波長後,才傳遞至膠體140擴散。舉例來說,從藍光發光晶片132之側壁131發射出的藍光,會先穿過黃色波長轉換層134轉換為白光後,才進入膠體140進行光擴散。在本實施方式中,膠體140的上表面低於發光件130的上表面,但並不用以限制本揭露。
在本實施方式中,膠體140包含複數個光學粒子142與光學膠144,將光學粒子142與光學膠144以合適的比例均勻混和,使得光學粒子142的重量百分濃度在25%至30%的範圍中,如此可讓膠體140具有良好的光擴散的功能。光學粒子142可以為包含矽或環氧樹脂的材質的微小粒子,且其粒徑在5μm至10μm的範圍中。光學膠144的材質可以包含矽或聚甲基丙烯酸甲酯(PMMA),其穿透度可介於95%至99%範圍,但並不用以限制本揭露。在其他實施方式中,光學粒子142與光學膠144的材質可以為具有導光特性的各種物質,可依設計者需求而定。
已敘述過的元件連接關係與功效將不再重複贅述,合先敘明。在以下敘述中,將說明顯示裝置100的製造方法。
第4圖繪示根據本揭露一實施方式之顯示裝置100的製造方法的流程圖。顯示裝置100的製造方法包含下列步驟。
在步驟S1中,將複數個光學粒子142與光學膠144混合,以形成膠體140。
在步驟S2中,塗佈膠體140於在基板110的表面111上的複數個發光件130之間的複數個間隙W中,使得膠體140圍繞發光件130。
在步驟S3中,設置光學膜150於膠體140與發光件130上方。
在步驟S4中,設置液晶面板160於光學膜150上方。在以下敘述中,將進一步說明上述各步驟。
在製作第2圖的顯示裝置100時,可先提供基板110,並在基板110上方設置具有發光件130的軟性電路板
120。在本實施方式中,可使用晶片尺寸封裝(Chip size package,CSP)的方式先將發光晶片132與波長轉換層134封裝後,才接合至軟性電路板120。其中,基板110、軟性電路板120與發光件130可視為燈板。
第5圖與第6圖繪示根據本揭露一實施方式之顯示裝置100的製造方法在特定步驟的示意圖。參閱第5圖,在形成具有基板110、軟性電路板120與發光件130的燈板後,可將光學粒子142與光學膠144攪拌混合使其均勻,以形成膠體140。膠體140中的光學粒子142的重量百分濃度可在25%至30%的範圍中。
在本實施方式中,光學粒子142可以為包含矽或環氧樹脂的材質的微小粒子,且其粒徑在5μm至10μm的範圍中。光學膠144可包含矽或聚甲基丙烯酸甲酯(PMMA)。在本實施方式中,光學膠144的穿透度可介於95%至99%的範圍,但本揭露不以此為限。
參閱第6圖,在形成第5圖的膠體140後,可將膠體140塗佈於在基板110的表面111上的複數個發光件130之間的複數個間隙W中,使得膠體140圍繞發光件130,但不覆蓋發光件130的上表面。經由以上步驟,便可得到第3圖的結構。
設置光學膜150於膠體140與發光件130上方,使得光學膜150與發光件130之間具有如第2圖介於0mm至1mm範圍中的混光距離d。設置液晶面板160於光學膜150上方,以形成第2圖的顯示裝置100。在本實施方式中的顯示裝置100可應用於液晶面板相關之產品,如戶外顯示螢幕、電視、筆記型電腦、桌上顯示器、車用顯示器、穿戴裝置或手機等,但本揭露不以此為限。
由於先將包含矽或環氧樹脂等材質的光學粒子142與包含矽或聚甲基丙烯酸甲酯的光學膠144在合適的比例下均勻混和,因此可形成具有良好光擴散功能的膠體140。隨後,在基板110的表面111上塗佈包含光學粒子142的膠體140,且膠體140填充於發光件130之間的間隙W中,使得發光件130之間無法發光的區域(如間隙W),可藉由填充的膠體140而將各個發光件130的光源反射出來,以形成連續的發光區域170(見第2圖),進而達到光擴散的功能。
雖然本揭露已以實施方式揭露如上,然其並非用以限定本揭露,任何熟習此技藝者,在不脫離本揭露之精神和範圍內,當可作各種之更動與潤飾,因此本揭露之保護範圍當視後附之申請專利範圍所界定者為準。
100:顯示裝置110:基板111:表面120:軟性電路板130:發光件131:側壁132:發光晶片134:波長轉換層140:膠體142:光學粒子144:光學膠150:光學膜160:液晶面板170:發光區域W:間隙d:混光距離S1~S4:步驟
第1圖繪示根據本揭露一實施方式之顯示裝置的上視圖。 第2圖繪示第1圖之顯示裝置沿線段2-2的剖面圖。 第3圖繪示第2圖之顯示裝置的局部放大圖。 第4圖繪示根據本揭露一實施方式之顯示裝置的製造方法的流程圖。 第5圖與第6圖繪示根據本揭露一實施方式之顯示裝置的製造方法在特定步驟的示意圖。
100:顯示裝置
110:基板
111:表面
120:軟性電路板
130:發光件
132:發光晶片
134:波長轉換層
140:膠體
142:光學粒子
144:光學膠
150:光學膜
160:液晶面板
170:發光區域
W:間隙
d:混光距離
Claims (10)
- 一種顯示裝置,包含:一基板;複數個發光件,位於該基板的一表面上,且該些發光件之間具有複數個間隙;一膠體,位於該基板的該表面上的該些間隙中,且圍繞該些發光件,該膠體的一上表面低於每一該些發光件的一上表面,且該膠體包含複數個光學粒子;一光學膜,位於該膠體與該些發光件上方,其中每一該些發光件的該上表面與該光學膜之間不具有該些光學粒子;以及一液晶面板,位於該光學膜上方。
- 如請求項1所述的顯示裝置,其中該光學膜與每一該些發光件之間具有介於0mm至1mm範圍中的混光距離。
- 如請求項1所述的顯示裝置,更包含:一軟性電路板,位於該基板上且電性連接該些發光件。
- 如請求項1所述的顯示裝置,其中每一該些發光件包含:一發光晶片;以及一波長轉換層,覆蓋該發光晶片。
- 如請求項4所述的顯示裝置,其中該波長轉換層延伸至該發光晶片的側壁,且該波長轉換層位於該發光晶片與該膠體之間。
- 如請求項1所述的顯示裝置,其中該些光學粒子的材質包含矽或環氧樹脂且粒徑在5μm至10μm的範圍中,且重量百分濃度在25%至30%的範圍中,且該膠體包含:一光學膠,該光學膠的材質包含矽或聚甲基丙烯酸甲酯。
- 一種顯示裝置的製造方法,包含:將複數個光學粒子與一光學膠混合,以形成一膠體;塗佈該膠體於在一基板的一表面上的複數個發光件之間的複數個間隙中,使得該膠體圍繞該些發光件,且該膠體的一上表面低於每一該些發光件的一上表面;設置一光學膜於該膠體與該些發光件上方,其中每一該些發光件的該上表面與該光學膜之間不具有該些光學粒子;以及設置一液晶面板於該光學膜上方。
- 如請求項7所述的顯示裝置的製造方法,更包含:封裝複數個發光晶片與複數個波長轉換層,以形成該些發光件;以及將該些發光件接合至一軟性電路板。
- 如請求項7所述的顯示裝置的製造方法,其中該些光學粒子的材質包含矽或環氧樹脂,且該光學膠的材質包含矽或聚甲基丙烯酸甲酯。
- 如請求項7所述的顯示裝置的製造方法,其中該些光學粒子的粒徑在5μm至10μm的範圍中,且重量百分濃度在25%至30%的範圍中。
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US10663795B1 (en) | 2020-05-26 |
CN109669297A (zh) | 2019-04-23 |
TW202022838A (zh) | 2020-06-16 |
US20200183228A1 (en) | 2020-06-11 |
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