CN113372006A - Preparation method of hyperfine modified polymer powder and hyperfine modified polymer liquid for grinding wafer - Google Patents
Preparation method of hyperfine modified polymer powder and hyperfine modified polymer liquid for grinding wafer Download PDFInfo
- Publication number
- CN113372006A CN113372006A CN202110768630.3A CN202110768630A CN113372006A CN 113372006 A CN113372006 A CN 113372006A CN 202110768630 A CN202110768630 A CN 202110768630A CN 113372006 A CN113372006 A CN 113372006A
- Authority
- CN
- China
- Prior art keywords
- grinding
- wafer
- polymer powder
- polymerization solution
- preparing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C11/00—Multi-cellular glass ; Porous or hollow glass or glass particles
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
Abstract
A preparation method of hyperfine modified polymer powder and liquid used for grinding a wafer comprises a preparation method of polymer powder and a preparation method of polymer liquid, when the polymer liquid is matched with a special honeycomb grid grinding pad to grind the surface of a semiconductor wafer, the grinding efficiency can be obviously improved while the processing precision is ensured, and diamond monocrystal abrasive particles in the scheme are grinding materials for fine grinding; microscopic pore forming is carried out on the grinding particles through the ceramic pore forming agent, so that pores on the grinding particles are increased, and more and finer diamond abrasive particles can be accommodated in the pores; the glass powder can form a mutually staggered network, so that the grinding toughness can be increased, and the whole block is prevented from being broken; the grinding powder particles prepared by the scheme have more edges and corners, and the grinding effect is greatly enhanced.
Description
Technical Field
The invention relates to the technical field of semiconductor grinding, in particular to a preparation method of hyperfine modified polymer solution for grinding a wafer.
Background
A wafer is a base material for manufacturing a chip, and generally, a wafer manufacturing process can be roughly divided into a process of slicing, edge grinding, lapping, corrosive etching, double-side grinding, double-side polishing, edge polishing, final polishing, and the like.
The cutting process for processing and forming the wafer is only rough cutting, and in order to obtain more accurate size, a grinding process is required, and hot melt adhesive residues, wafer or chip residues, grinding pad particles and the like often influence the grinding effect of the silicon wafer in the grinding process, so that the grinding efficiency is reduced along with the prolonging of time. The grinding particles in the existing grinding fluid have few edges and corners, simple structure and lower grinding efficiency.
Disclosure of Invention
The present invention aims to overcome the above-mentioned shortcomings and provide a technical solution to solve the above-mentioned problems.
A hyperfine modified polymer powder for grinding a wafer is prepared by the following steps, wherein the average particle size of the polymer powder is 15-25 um:
1) preparing a mud-shaped prefabricated material: the raw materials by weight percentage are as follows: 20-40% of diamond single crystal particles, 5-10% of alumina, 10-15% of silicon dioxide, 20-30% of glass powder, 8-10% of 100-mesh ceramic pore-forming agent, 1-2% of thixotropic agent and the balance of water, and uniformly mixing the components to prepare a mud-shaped prefabricated material;
2) baking: baking the prefabricated material prepared in the step one in baking equipment for 1.5-2.5 hours at 70-80 ℃, and then adjusting the temperature to 120 ℃ for baking for 3.5-4.5 hours;
3) and (3) sintering: placing the baked prefabricated material into a sintering furnace, sintering at a high temperature of 650-750 ℃ for 1-2 hours, then preserving heat for 1-2 hours, heating to 750 ℃, sintering for 1-2 hours, and then cooling;
4) and (3) crushing and screening, namely crushing the prefabricated material obtained in the step three, and screening by using a screening machine to obtain the polymer powder particles with the average particle size of 15-25 um.
A preparation method of hyperfine modified polymer liquid for grinding wafers comprises the following raw materials in percentage by weight: the polymer powder with the average particle size of 15-25 um prepared by the steps is prepared by uniformly mixing 2-5% of polymer powder, 90-95% of triethylene glycol, 0.3-0.51% of dispersant, 0.5-1% of suspending agent and the balance of water.
More specifically, the average particle diameter of the polymer powder is 20 μm.
More specifically, the particle diameter of the diamond single crystal particle is D50: 0.2-3 um.
More specifically, the particle size of the ceramic pore-forming agent is 100-300 meshes.
More specifically, the thixotropic agent is magnesium aluminum silicate.
More specifically, the polymerization solution is used for polishing semiconductor wafers.
More specifically, the polymerization solution is used in combination with a honeycomb mesh polishing pad to polish a semiconductor wafer.
The invention has the beneficial effects that: when the grinding fluid is used for grinding a semiconductor wafer, the surface of a product is ground by matching with a special honeycomb grinding pad, the grinding efficiency can be obviously improved while the processing precision is ensured, and the diamond monocrystal abrasive particles in the scheme are fine grinding materials; microscopic pore forming is carried out on the grinding particles through a 100-300-mesh ceramic pore forming agent, so that pores on the grinding particles are increased, and more and finer diamond abrasive particles can be accommodated in the pores; the glass powder can form a mutually staggered network, so that the grinding toughness can be increased, the whole block is prevented from being broken, and the agglomeration of particles is enhanced; the surface edges and corners in the grinding powder particles prepared by the scheme are increased, the sharpness is improved, the grinding effect and the grinding efficiency are greatly enhanced, the characteristic of high grinding efficiency of large particles is kept, and the advantage of high grinding fineness of small particles is also kept.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 is an enlarged view of a polymer powder particle under an electronic display micromirror;
FIG. 2 is an enlarged view of a single polymer powder particle under an electron microscope;
FIG. 3 is a schematic diagram of a polishing process;
fig. 4 is a schematic front view of a honeycomb grid polishing pad.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-2, in the first embodiment, first, polymer powder particles are prepared: a method comprising the steps of: 1) preparing a mud-shaped prefabricated material: the components by weight percentage are as follows: 20% of diamond single crystal particles, 10% of aluminum oxide, 15% of silicon dioxide, 35% of glass powder, 10% of 100-mesh ceramic pore-forming agent, 2% of thixotropic agent and 8% of water, and uniformly mixing the components to prepare a mud-shaped prefabricated material; 2) baking: baking the prefabricated material prepared in the first step in baking equipment for 1.5-2.5 hours at 80 ℃, then adjusting the temperature to 120 ℃, baking for 3.5-4.5 hours, and 3) sintering: placing the baked prefabricated material into a sintering furnace, sintering for 1 hour at a high temperature of 650-750 ℃, then preserving heat for 1 hour, heating to 750 ℃, sintering for 1 hour, and then cooling; 4) and (3) crushing and screening, namely crushing the prefabricated material prepared in the step, and screening by using a screening machine to obtain the polymer powder particles with the average particle size of 15-25 um.
Secondly, preparing a polymerization solution: the polymerization solution comprises the following components in percentage by weight, wherein the average particle size of the polymerization solution prepared by the steps is 15-25 um, and the polymerization solution is prepared by uniformly mixing 2% of polymer powder particles, 95% of triethylene glycol, 0.5% of dispersing agent, 0.5% of suspending agent and 2% of water.
Example two, first, polymeric powder particles were prepared: a method comprising the steps of: 1) preparing a mud-shaped prefabricated material: the components by weight percentage are as follows: 30% of diamond single crystal particles, 7.5% of alumina, 12.5% of silicon dioxide, 30% of glass powder, 9% of 100-mesh ceramic pore-forming agent, 1% of thixotropic agent and 10% of water, and uniformly mixing the components to prepare a mud-shaped prefabricated material; 2) baking: baking the prefabricated material prepared in the first step in baking equipment for 1.5-2.5 hours at 80 ℃, then adjusting the temperature to 120 ℃, baking for 3.5-4.5 hours, and 3) sintering: placing the baked prefabricated material into a sintering furnace, sintering for 2 hours at a high temperature of 650-750 ℃, then preserving heat for 2 hours, heating to 750 ℃, sintering for 1 hour, and then cooling; 4) and (3) crushing and screening, namely crushing the prefabricated material prepared in the step, and screening by using a screening machine to obtain the polymer powder particles with the average particle size of 15-25 um.
Secondly, preparing a polymerization solution: the polymerization solution comprises the following components in percentage by weight, wherein the average particle size of the polymerization solution prepared by the steps is 15-25 um, and the polymerization solution is prepared by uniformly mixing 3% of polymer powder particles, 93% of triethylene glycol, 0.4% of dispersing agent, 0.8% of suspending agent and 2.8% of water.
Example three, first a polymeric powder particle was prepared: a method comprising the steps of: 1) preparing a mud-shaped prefabricated material: the components by weight percentage are as follows: 40% of diamond single crystal particles, 5% of alumina, 10% of silicon dioxide, 20% of glass powder, 8% of 100-mesh ceramic pore-forming agent, 1% of thixotropic agent and 16% of water, and uniformly mixing the components to prepare a mud-shaped prefabricated material; 2) baking: baking the prefabricated material prepared in the first step in baking equipment for 1.5-2.5 hours at 80 ℃, then adjusting the temperature to 120 ℃, baking for 3.5-4.5 hours, and 3) sintering: placing the baked prefabricated material into a sintering furnace, sintering for 1 hour at a high temperature of 650-750 ℃, then preserving heat for 2 hours, heating to 750 ℃, sintering for 2 hours, and then cooling; 4) and (3) crushing and screening, namely crushing the prefabricated material prepared in the step, and screening by using a screening machine to obtain the polymer powder particles with the average particle size of 15-25 um.
Secondly, preparing a polymerization solution: the polymerization solution comprises the following components, by weight, 5% of polymer powder particles with the average particle size of 15-25 um prepared in the steps, 90% of triethylene glycol, 0.3% of a dispersing agent, 1% of a suspending agent and 3.7% of water, and is prepared by uniformly mixing the components.
Referring to fig. 3-4, a semiconductor wafer 20 is polished on a polishing machine using a polishing solution (polymer solution) according to the first, second, and third embodiments and a honeycomb grid polishing pad 10 (mainly made of PET), wherein in fig. 3, the semiconductor wafer 20 is placed between an upper honeycomb grid polishing pad 10 and a lower honeycomb grid polishing pad 10, the upper honeycomb grid polishing pad 10 and the lower honeycomb grid polishing pad 10 are respectively disposed on an upper turntable 22 and a lower turntable 21 of the polishing machine, the polishing solution is pumped into a conduit 100 by a pump and finally flows between the polishing pads, so that the honeycomb grid polishing pad 10 grinds the surface of the semiconductor wafer 20 in cooperation with the polishing solution, and during the polishing process, initial polymer powder polishing large particles with an average particle size of 20um are continuously squeezed and broken during the polishing process to form new and relatively fine diamond single crystal abrasive particles with a particle size of 0.2-3um, and the wafer surface is polished again finely, compared with the existing grinding fluid, the grinding efficiency of the polymer fluid not only retains the characteristic of high grinding efficiency of large particles, but also retains the advantage of high grinding fineness of small particles, so that the grinding efficiency and the grinding removal rate are greatly improved, and the grinding quality and precision are further improved.
| Example 1 | Example 2 | Example 3 | |
| Removal rate of grinding | 1um/min | 1.2um/min | 1.1um/min |
| Polishing time | 600min | 600min | 600min |
| Product yield | 99.5％ | 99.5％ | 99.5％ |
As can be seen from the data in Table 1, the grinding polymerization liquid can remarkably improve the processing efficiency under the condition of ensuring that the roughness, the flatness and the yield of the processed product are the same as the grinding performance obtained by the conventional grinding process, the speed of the polishing removal rate can reach 1 um/min, and compared with the conventional removal rate of 0.7 um/min and the product yield of 80%, the efficiency of the processed product and the processing yield are greatly improved, so that the grinding polymerization liquid has remarkable economic benefit; the observation that diamond single crystal particles in the grinding fluid are amplified by an electron microscope shows that, as shown in fig. 2, the surfaces of the polymer powder grinding particles obviously have more holes, more and smaller diamond abrasive particles are contained in the holes, and the edges and corners of the surfaces of the grinding particles are increased, so that the grinding efficiency is improved.
Although the present invention has been described with reference to the above preferred embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (8)
1. A hyperfine modified polymer powder for grinding a wafer, wherein the average particle size of the polymer powder is 15-25 um, and the hyperfine modified polymer powder is prepared by the following steps:
1) preparing a mud-shaped prefabricated material: the raw materials by weight percentage are as follows: 20-40% of diamond single crystal particles, 5-10% of alumina, 10-15% of silicon dioxide, 20-30% of glass powder, 1% of ceramic pore-forming agent 8-10%, 1-2% of thixotropic agent and the balance of water, and uniformly mixing the components to prepare a mud-shaped prefabricated material;
2) baking: baking the prefabricated material prepared in the step one in baking equipment for 1.5-2.5 hours at 70-80 ℃, and then adjusting the temperature to 120 ℃ for baking for 3.5-4.5 hours;
3) and (3) sintering: placing the baked prefabricated material into a sintering furnace, sintering at a high temperature of 650-750 ℃ for 1-2 hours, then preserving heat for 1-2 hours, heating to 750 ℃, sintering for 1-2 hours, and then cooling;
4) and (3) crushing and screening, namely crushing the prefabricated material obtained in the step three, and screening by using a screening machine to obtain the polymer powder particles with the average particle size of 15-25 um.
2. The method according to claim 1, wherein the method further comprises the steps of: the polymerization liquid comprises the following raw materials in percentage by weight: the polymer powder is prepared by uniformly mixing 2-5% of the polymer powder in claim 1, 90-95% of triethylene glycol, 0.3-0.51% of a dispersant, 0.5-1% of a suspending agent and the balance of water.
3. The method for preparing the ultra-fine modified polymerization solution for the wafer as set forth in claim 1, wherein: the average particle diameter of the polymer powder was 20 μm.
4. The method for preparing the ultra-fine modified polymerization solution for the wafer as set forth in claim 1, wherein: the grain size of the diamond single crystal grains is D50: 0.2-3 um.
5. The method for preparing the ultra-fine modified polymerization solution for the wafer as set forth in claim 1, wherein: the ceramic pore-forming agent has a particle size of 100-300 meshes.
6. The method for preparing the ultra-fine modified polymerization solution for the wafer as set forth in claim 1, wherein: the thixotropic agent is magnesium aluminum silicate.
7. The method for preparing the ultra-fine modified polymerization solution for the wafer as set forth in claim 1, wherein: the polymerization solution is used for grinding semiconductor wafers.
8. The method for preparing the ultra-fine modified polymerization solution for the wafer as set forth in claim 1, wherein: and the polymerization solution is matched with a honeycomb grid grinding pad to grind the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110768630.3A CN113372006A (en) | 2021-07-07 | 2021-07-07 | Preparation method of hyperfine modified polymer powder and hyperfine modified polymer liquid for grinding wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110768630.3A CN113372006A (en) | 2021-07-07 | 2021-07-07 | Preparation method of hyperfine modified polymer powder and hyperfine modified polymer liquid for grinding wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113372006A true CN113372006A (en) | 2021-09-10 |
Family
ID=77581382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110768630.3A Pending CN113372006A (en) | 2021-07-07 | 2021-07-07 | Preparation method of hyperfine modified polymer powder and hyperfine modified polymer liquid for grinding wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113372006A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190185636A1 (en) * | 2016-05-20 | 2019-06-20 | 3M Innovative Properties Company | Pore inducer and porous abrasive form made using the same |
| CN110587498A (en) * | 2019-08-23 | 2019-12-20 | 河南富莱格超硬材料有限公司 | Method for preparing superhard small grinding head |
-
2021
- 2021-07-07 CN CN202110768630.3A patent/CN113372006A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190185636A1 (en) * | 2016-05-20 | 2019-06-20 | 3M Innovative Properties Company | Pore inducer and porous abrasive form made using the same |
| CN110587498A (en) * | 2019-08-23 | 2019-12-20 | 河南富莱格超硬材料有限公司 | Method for preparing superhard small grinding head |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6755729B2 (en) | Porous abrasive tool and method for making the same | |
| CN104592898B (en) | Efficiently sapphire lapping liquid and preparation method thereof | |
| TWI228066B (en) | Abrasive cloth dresser and method for dressing an abrasive cloth with the same | |
| JP4456691B2 (en) | Conditioner manufacturing method | |
| CN102119071B (en) | High porosity vitrified superabrasive products and method of preparation | |
| CN1666844A (en) | Dresser for polishing cloth and method for producing the same | |
| CN104114322B (en) | Method for polishing both surfaces of wafer | |
| CN106392908A (en) | Diamond grinding wheel with ceramic binders and production method thereof | |
| WO2009091140A2 (en) | Conditioner for chemical mechanical planarization pad | |
| CN112659003B (en) | Self-sharpening superhard material grinding wheel and preparation method thereof | |
| CN103909465A (en) | Method for grinding and polishing large-size sapphire substrate slice | |
| CN111548737A (en) | Diamond grinding fluid and preparation method thereof | |
| CN108587567A (en) | A kind of abrasive suitable for the soft crisp wafer grinding polishing of cadmium-zinc-teiluride | |
| CN111100599A (en) | Superhard aggregate abrasive with high micro-crushing characteristic and preparation method thereof | |
| CN113211334A (en) | Self-sharpening resin binder diamond grinding wheel and preparation method thereof | |
| CN113372006A (en) | Preparation method of hyperfine modified polymer powder and hyperfine modified polymer liquid for grinding wafer | |
| CN112658974A (en) | YAG wafer grinding method | |
| JP6085723B1 (en) | Abrasive material and method for producing abrasive material | |
| WO2017119342A1 (en) | Polishing material | |
| CN110105055A (en) | The production method that thin film circuit polishes substrate with beryllium oxide ceramics | |
| TWM500653U (en) | Polishing system and polishing pad set | |
| JP2002127017A (en) | Dresser for polishing cloth and its manufacture | |
| CN108381409B (en) | Superhard resin grinding wheel for thinning gallium arsenide wafer and preparation method thereof | |
| CN111136589B (en) | Preparation method of abrasive grain boundary bonding and fixing grinding tool | |
| CN102990529A (en) | Two-sided repairing disc of chemical-mechanical polishing pad |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |