CN108381409B - Superhard resin grinding wheel for thinning gallium arsenide wafer and preparation method thereof - Google Patents
Superhard resin grinding wheel for thinning gallium arsenide wafer and preparation method thereof Download PDFInfo
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- CN108381409B CN108381409B CN201810386837.2A CN201810386837A CN108381409B CN 108381409 B CN108381409 B CN 108381409B CN 201810386837 A CN201810386837 A CN 201810386837A CN 108381409 B CN108381409 B CN 108381409B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/14—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings
- B24D3/18—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings for porous or cellular structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
- B24D3/285—Reaction products obtained from aldehydes or ketones
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
- B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
- B24D3/342—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
- B24D3/346—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties utilised during polishing, or grinding operation
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a superhard resin grinding wheel for thinning a gallium arsenide wafer, which is prepared by mixing a liquid material and a solid material according to the mass ratio of 1: 40-55; wherein the liquid material is prepared by uniformly mixing resin liquid and mixed cresol according to the mass ratio of 1: 1-2; the solid material comprises the following raw materials in parts by volume: 28-40 parts of diamond, 8-15 parts of silicon carbide, 1-4 parts of cobalt oxide, 9-13 parts of ceramic binder, 28-35 parts of phenolic resin and 1-3 parts of calcium oxide; the invention also discloses a preparation method of the superhard resin grinding wheel. The superhard resin grinding wheel for thinning the gallium arsenide wafer, which is prepared by the invention, is sintered by two steps, so that the chip capacity of high porosity (about 40%) is ensured, and the grinding wheel frame has high structural strength and long service life; the grinding wheel meets the requirement of large feeding rate in use, the working efficiency is guaranteed, the service life is not reduced, and meanwhile, the granularity is refined, so that a damage layer is reduced, and the surface quality is improved.
Description
Technical Field
The invention belongs to the technical field of grinding wheels, and particularly relates to a superhard resin grinding wheel for thinning a gallium arsenide wafer and a preparation method thereof.
Background
The gallium arsenide wafer belongs to III-V group compound semiconductor, its chemical formula is GaAs, molecular weight is 144.63, forbidden band width is 1.4 electron volt, and it can be made into semi-insulating high-resistance material whose resistivity is higher than that of silicon and germanium by more than 3 orders of magnitude, and can be used for making integrated circuit substrate, infrared detector and gamma-photon detector, etc. The semiconductor device made of the gallium arsenide wafer has the advantages of good high-temperature, high-frequency and low-temperature performances, low noise, strong radiation resistance and the like. The gallium arsenide wafer is a material having various advantages in semiconductor materials, but due to its special structural form, the gallium arsenide wafer has the same hardness as silicon, but the brittleness is much higher than that of silicon, in the hard and brittle material processing, the material is mainly removed in a fracture mode, and in the ultra-precise processing, the material is mainly removed in a plastic mode, so the preparation of the ultra-fine grinding wheel needs to be designed in combination with the plastic removal mode.
In the preparation process of gallium arsenide wafer circuits and devices, gallium arsenide polished wafers are used as base materials, the surface quality of the polished wafers directly influences the performance and yield of the devices, the depth of an ion implantation layer is usually between 0.1 and 0.5 um, and a damage layer of the polished wafers is also in the surface range, so that the preparation of the gallium arsenide polished wafers with good surface quality and low subsurface damage layer is very important.
At present, the processing technology of gallium arsenide wafers is mainly coarse grinding-fine grinding-polishing, wherein the fine grinding is to remove the surface damage left by the previous coarse grinding, the coarse grinding mainly removes the surface damage, but a larger damage layer is introduced at the same time. If the gallium arsenide wafer rough grinding wheel is a grinding wheel with the granularity of 600 meshes, the damaged layer can be reduced, but the introduction of the grinding wheel with the granularity of 600 meshes cannot perform rough grinding according to the working parameters of the grinding wheel with the granularity of 325 meshes, so that the working efficiency is greatly reduced, and the service life of the grinding wheel is also reduced.
Disclosure of Invention
Based on the defects of the prior art, the invention aims to provide the superhard resin grinding wheel for thinning the gallium arsenide wafer, which has high porosity, improves the surface quality of the gallium arsenide wafer and reduces a damaged layer on the premise of not reducing the working efficiency and the service life; the invention also provides a preparation method of the superhard resin grinding wheel.
In order to achieve the purpose, the invention adopts the technical scheme that:
a superhard resin grinding wheel for thinning a gallium arsenide wafer is prepared by mixing a liquid material and a solid material according to the mass ratio of 1: 40-55; wherein the liquid material is prepared by uniformly mixing resin liquid and mixed cresol according to the mass ratio of 1: 1-2; the solid material comprises the following raw materials in parts by volume: 28-40 parts of diamond, 8-15 parts of silicon carbide, 1-4 parts of cobalt oxide, 9-13 parts of ceramic binder, 28-35 parts of phenolic resin and 1-3 parts of calcium oxide.
Preferably, the resin liquid is thermosetting phenolic resin, and the viscosity of the resin liquid is 0.5-2 Pa.s.
Preferably, the ceramic binder is a clay-feldspar type binder; the particle size of the ceramic binder is 5-8 μm.
Preferably, the particle size of the diamond is 20-30 μm; the particle size of the silicon carbide is 7-10 mu m; the particle size of the cobalt oxide is 3-7 mu m; the particle size of the calcium oxide is 10-14 μm.
The preparation method of the superhard resin grinding wheel for thinning the gallium arsenide wafer comprises the following steps:
(1) grinding phenolic resin into powder, weighing raw materials of solid materials according to volume parts, and then weighing resin liquid and mixed cresol according to mass ratio;
(2) cleaning diamond with acid, removing impurities, drying, adding cobalt oxide and calcium oxide, mixing, sieving, fully dispersing in acetone, and drying to obtain mixed powder 1; mixing and sieving a ceramic bonding agent and powdery phenolic resin to obtain mixed powder 2; ball milling, mixing and sieving the mixed powder 1 and the mixed powder 2;
(3) dispersing the resin liquid into mixed cresol, then adding the product obtained in the step (2), stirring and mixing the materials uniformly, and then sieving the materials by a sieve of 90-110 meshes to obtain a material to be pressed;
(4) pressing and forming the material to be pressed obtained in the step (3) to obtain a grinding wheel ring;
(5) cutting the grinding wheel ring according to shape requirements, sintering at 600-690 ℃ for 16-19 hours, hardening at 670-700 ℃ for 3-5 hours, and finally processing to obtain the superhard resin grinding wheel.
Preferably, the press forming control of step (4) is: keeping constant temperature and constant pressure for 2-5 minutes under the conditions of pressure of 1.8-2.2 MPa and temperature of 180-200 ℃, keeping the temperature unchanged, pressurizing to 5.8-6.2 MPa, keeping constant temperature and constant pressure for 60-80 minutes, and demolding; when the pressure is increased to 5.8-6.2 MPa, in order to ensure the forming effect of the grinding wheel ring and avoid the danger of die cracking, the air release operation (3 times or 4 times of air release within 2 minutes) is performed firstly so as to discharge the waste gas in the die.
Preferably, the acid washing for impurity removal in the step (2) is to immerse the diamond in acid liquor at the temperature of 80-100 ℃, stir for 20-30 minutes, then carry out solid-liquid separation, wash and dry the solid.
Further, the acid solution is hydrochloric acid with the mass fraction of 4-6%.
The superhard resin grinding wheel is applied to thinning of the gallium arsenide wafer.
The superhard resin grinding wheel for thinning the gallium arsenide wafer, which is prepared by the invention, is sintered by two steps of hot press molding and sintering hardening, so that the chip capacity of high porosity (about 40%) is ensured, and the grinding wheel frame has high structural strength and long service life. The grinding wheel meets the requirement of large feeding rate in use, the working efficiency is guaranteed, the service life is not reduced, and meanwhile, the granularity is refined, so that a damage layer is reduced, and the surface quality is improved.
Drawings
FIG. 1 is a SEM micrograph of fractures of a superhard resin grinding wheel prepared in example 1;
FIG. 2 is a high SEM topography of the fracture of the superhard resin grinding wheel prepared in example 1;
FIG. 3 is an SEM photograph of a GaAs wafer after it has been thinned with the superhard resin grinding wheel of example 1;
FIG. 4 is an atomic force diagram of the surface of a gallium arsenide wafer;
FIG. 5 is a graph showing the comparison of the single-piece wear of the superhard resin grinding wheel (600 mesh) obtained in example 1 and the conventional grinding wheel (325 mesh).
Detailed Description
In order to make the technical purpose, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention are further described with reference to specific examples, which are intended to explain the present invention and are not to be construed as limiting the present invention, and those who do not specify a specific technique or condition in the examples follow the techniques or conditions described in the literature in the art or follow the product specification.
In the following examples, diamond was purchased from the company of Henan Asia Longjin Diamond products GmbH, with a particle size of 20-30 μm, and single crystal; silicon carbide is purchased from white pigeon group Co., Ltd, and has a particle size of 10 μm; cobalt oxide was purchased from Jining HuaKai resin Co., Ltd, and had a particle size of 5 μm; the phenolic resin is purchased from Nantong Sumitomo bakelite Co., Ltd, the model is PR-50590, and the particle size is 22 mu m; calcium oxide was purchased from Tianjin Shufeng ship chemical reagent science and technology ltd, particle size 12 μm; the resin liquid is thermosetting phenolic resin which is purchased from Bima Sail industry Co., Ltd of New county city and has the viscosity of 0.5 Pa.s; the mixed cresol was purchased from Guangzhou river Shunhuachu chemical engineering Co., Ltd and was analytically pure. The ceramic binder is a clay-feldspar binder, is purchased from the Henan Sharp stone group, has the particle size of 13 mu m, is used after being ball-milled for 160-180 hours on a ball mill before being used, and is detected by a Malvern particle size analyzer, and the particle size of the ceramic binder is 5-8 mu m. The acid solution is hydrochloric acid with the mass fraction of 5%. The GaAs chip is provided by Shenzhou crystal technology development Co., Ltd of New county, and has a size of 4 inches; the existing 325 mesh grinding wheel is supplied by Zhengzhou abrasive grinding tool grinding research institute, Inc., and has a model number of 6A 2T/P209 × 22.5 × 158 × 3 × 5.
Example 1
A superhard resin grinding wheel is prepared from a resin liquid, mixed cresol and a solid material according to the mass ratio of 1: 2: 150 (namely the mixture of the resin liquid and the mixed cresol and the solid material are 1: 50); the solid material comprises the following raw materials in parts by volume: 32 parts of diamond, 12 parts of silicon carbide, 2 parts of cobalt oxide, 12 parts of ceramic bond, 35 parts of phenolic resin and 2 parts of calcium oxide.
The preparation method of the superhard resin grinding wheel comprises the following steps:
(1) ball-milling phenolic resin for 168 hours by using a liquid nitrogen ball mill, then screening the phenolic resin by using a 280-mesh screen to obtain powdery phenolic resin, weighing raw materials of solid materials according to volume parts, and then weighing resin liquid and mixed cresol according to mass ratio;
(2) immersing diamond in 80 ℃ acid liquor, stirring for 20 minutes, then carrying out solid-liquid separation, and washing and drying solids; adding cobalt oxide and calcium oxide, mixing, sieving with a 200-mesh sieve for 3 times, immersing in acetone, stirring and ultrasonically treating for 20 minutes, and drying at 120 ℃ to obtain mixed powder 1; mixing the ceramic bond and the powdery phenolic resin, and sieving the mixture for 5 times by a 200-mesh sieve to obtain mixed powder 2;
mixing the mixed powder 1 and the mixed powder 2, and sieving the mixture for 3 times by a 200-mesh sieve to obtain total mixed powder; putting the total mixed powder into a mixing tank of a three-dimensional planetary ball mill, adding corundum ceramic balls (the diameter is 5mm, the adding amount of the corundum ceramic balls is half of the mass of the total mixed powder) into the mixing tank, and carrying out ball milling and mixing for 1 hour at the rotating speed of 50 rpm; then pouring out the materials in the mixing tank, separating out the corundum ceramic balls through a 60-mesh screen, and reserving screen underflow for later use;
(3) uniformly dispersing the resin liquid in mixed cresol, then adding the undersize obtained in the step (2), stirring and mixing the materials until the materials are uniform, and then sieving the materials for 3 times by using a 100-mesh sieve to obtain a material to be pressed;
(4) pressing and forming the material to be pressed obtained in the step (3) to obtain a grinding wheel ring;
the press forming control is as follows: keeping constant temperature and pressure for 3 minutes under the conditions of pressure of 2 MPa and temperature of 190 ℃, keeping the temperature unchanged, pressurizing to 6 MPa, keeping constant temperature and pressure for 60 minutes, and demolding; when the pressure is increased to 6 MPa, in order to ensure the forming effect of the grinding wheel ring and avoid the danger of die cracking, the air is firstly released (3 times of air release within 2 minutes) so as to discharge the waste gas in the die;
(5) cutting the grinding wheel ring according to shape requirements, sintering at 690 ℃ for 16 hours, hardening at 700 ℃ for 3 hours, and finally processing to obtain the super-hard resin grinding wheel; wherein, the cutting and processing can be realized according to the conventional technical means in the field, which is not the innovation of the invention, and thus, the details are not repeated.
Example 2
A superhard resin grinding wheel is prepared from a resin liquid, mixed cresol and a solid material according to the mass ratio of 1: 2: 129 (namely the mixture of the resin liquid and the mixed cresol is 1: 43); the solid material comprises the following raw materials in parts by volume: 28 parts of diamond, 14 parts of silicon carbide, 3 parts of cobalt oxide, 13 parts of ceramic bond, 30 parts of phenolic resin and 1 part of calcium oxide.
The preparation method of the superhard resin grinding wheel comprises the following steps:
(1) ball-milling phenolic resin for 168 hours by using a liquid nitrogen ball mill, then screening the phenolic resin by using a 280-mesh screen to obtain powdery phenolic resin, weighing raw materials of solid materials according to volume parts, and then weighing resin liquid and mixed cresol according to mass ratio;
(2) immersing diamond in acid liquor at 90 ℃, stirring for 20 minutes, then carrying out solid-liquid separation, and washing and drying solids; adding cobalt oxide and calcium oxide, mixing, sieving with a 240-mesh sieve for 3 times, immersing in acetone, stirring and ultrasonically treating for 30 minutes, and drying at 120 ℃ to obtain mixed powder 1; mixing the ceramic bond and the powdery phenolic resin, and sieving the mixture for 5 times by a 200-mesh sieve to obtain mixed powder 2;
mixing the mixed powder 1 and the mixed powder 2, and sieving the mixture for 3 times by a 200-mesh sieve to obtain total mixed powder; putting the total mixed powder into a mixing tank of a three-dimensional planetary ball mill, adding corundum ceramic balls (the diameter is 4 mm, the adding amount of the corundum ceramic balls is half of the mass of the total mixed powder) into the mixing tank, and carrying out ball milling and mixing for 1 hour at the rotating speed of 60 rpm; then pouring out the materials in the mixing tank, separating out the corundum ceramic balls through a 80-mesh screen, and reserving screen underflow for later use;
(3) uniformly dispersing the resin liquid in mixed cresol, then adding the undersize obtained in the step (2), quickly stirring and mixing the materials until the materials are uniform, and then sieving the materials for 3 times by using a 100-mesh sieve to obtain a material to be pressed;
(4) pressing and forming the material to be pressed obtained in the step (3) to obtain a grinding wheel ring;
the press forming control is as follows: keeping constant temperature and pressure for 3 minutes under the conditions of pressure of 2 MPa and temperature of 190 ℃, keeping the temperature unchanged, pressurizing to 6 MPa, keeping constant temperature and pressure for 60 minutes, and demolding; when the pressure is increased to 6 MPa, in order to ensure the forming effect of the grinding wheel ring and avoid the danger of die cracking, the air is firstly released (3 times of air release within 2 minutes) so as to discharge the waste gas in the die;
(5) cutting the grinding wheel ring according to shape requirements, sintering at 600 ℃ for 19 hours, hardening at 670 ℃ for 5 hours, and finally processing to obtain the superhard resin grinding wheel.
Characterization and Performance testing
The fracture of the superhard resin grinding wheel prepared in example 1 is characterized by a scanning electron microscope, and the result is shown in fig. 1 and fig. 2. It can be seen from FIGS. 1 and 2 that the grinding wheel has a uniform structure and a high porosity (about 40%).
The superhard resin grinding wheel prepared in example 1 is used for testing the grinding performance of the gallium arsenide wafer, and the test conditions are as follows:
grinding machine: disco DFG 840;
the specification of the grinding wheel is as follows: roughly grinding a shaft to 600 meshes;
rough grinding wheel (superhard resin grinding wheel produced in example 1) size: 600 meshes of 209mm (grinding wheel external diameter) × 22.5mm (grinding wheel total thickness) × 158mm (grinding wheel aperture) × 3.5mm (grinding wheel teeth ring width) × 5mm (grinding wheel teeth height);
grinding sequence: only rough grinding is carried out;
grinding technological parameters are as follows:
the feeding rate is as follows: 4/2/1 μm/s
Rotating speed of the grinding wheel spindle: 1800 rpm;
grinding fluid: deionized water;
removal amount: 150 μm
Carrying disc rotating speed: 150/150/80 rpm
No spark exit speed: 3 rev.
The SEM image of the thinned gaas wafer is shown in fig. 3, where clear grinding lines are seen on the surface of the wafer. The atomic map of the wafer surface after thinning is shown in fig. 4, and it can be seen from fig. 4 that the maximum value of the sum of the peaks and the valleys of the wafer surface is 748.4 nm, which indicates that the depth of the surface pits is not more than 0.8 μm at the maximum, and the removal amount of the fine grinding is 20 μm, which is a method for completely removing the surface damage caused by the rough grinding.
At present, the feed rate of the grinding wheel is 4 μm/s, the single chip removal amount is 150 μm, the time is about 40 seconds, and the quality of the wafer is ensured on the premise of not reducing the working efficiency. The comparison graph of the single-piece loss of the superhard resin grinding wheel prepared in the embodiment 1 of the invention and the 325-mesh grinding wheel shows that, as shown in fig. 5, the loss of each wafer ground by the superhard resin grinding wheel (600-mesh grinding wheel, identified as 600 #) prepared in the embodiment 1 is not much different from the loss of each wafer ground by the existing 325-mesh grinding wheel (identified as 325 #) and the grinding wheel prepared in the invention not only improves the surface quality and the damaged layer of the wafer but also does not reduce the service life of the grinding wheel, so that the manufacturing method of the superhard resin grinding wheel can contribute to the grinding processing of gallium arsenide wafer materials.
After the gallium arsenide wafer is subjected to fine grinding and back thinning, the superhard resin grinding wheel prepared in the embodiment 2 shows the grinding effect and efficiency equivalent to those of the embodiment 1. Therefore, the superhard resin grinding wheel prepared by the method is very suitable for polishing the gallium arsenide wafer, achieves excellent effect and can obtain stable use parameters. Therefore, the superhard resin grinding wheel and the preparation method thereof can make a great contribution to the polishing and processing of brittle materials.
Claims (2)
1. The utility model provides a superhard resin emery wheel is used in attenuate of gallium arsenide wafer which characterized in that: the formula of the grinding wheel comprises a resin liquid, mixed cresol and a solid material according to the mass ratio of 1: 2: 150; the solid material comprises the following raw materials in parts by volume: 32 parts of diamond, 12 parts of silicon carbide, 2 parts of cobalt oxide, 12 parts of ceramic bond, 35 parts of phenolic resin and 2 parts of calcium oxide.
2. The utility model provides a superhard resin emery wheel is used in attenuate of gallium arsenide wafer which characterized in that: the formula of the grinding wheel comprises resin liquid, mixed cresol and solid material according to the mass ratio of 1: 2: 129; the solid material comprises the following raw materials in parts by volume: 28 parts of diamond, 14 parts of silicon carbide, 3 parts of cobalt oxide, 13 parts of ceramic bond, 30 parts of phenolic resin and 1 part of calcium oxide.
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| CN105058249A (en) * | 2015-07-27 | 2015-11-18 | 郑州磨料磨具磨削研究所有限公司 | Resin and rubber combined binding agent grinding wheel for polishing of ceramic materials |
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