CN113330586A - 深紫外发光元件用反射电极的制造方法、深紫外发光元件的制造方法及深紫外发光元件 - Google Patents

深紫外发光元件用反射电极的制造方法、深紫外发光元件的制造方法及深紫外发光元件 Download PDF

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CN113330586A
CN113330586A CN202080010391.9A CN202080010391A CN113330586A CN 113330586 A CN113330586 A CN 113330586A CN 202080010391 A CN202080010391 A CN 202080010391A CN 113330586 A CN113330586 A CN 113330586A
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composition ratio
ultraviolet light
deep ultraviolet
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渡边康弘
中野雅之
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Dowa Electronics Materials Co Ltd
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Dowa Electronics Materials Co Ltd
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Priority claimed from PCT/JP2020/001761 external-priority patent/WO2020153308A1/ja
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CN202080010391.9A 2019-01-22 2020-01-20 深紫外发光元件用反射电极的制造方法、深紫外发光元件的制造方法及深紫外发光元件 Pending CN113330586A (zh)

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JP2019-008785 2019-01-22
JP2019008785 2019-01-22
JP2020-006377 2020-01-17
JP2020006377A JP6793863B2 (ja) 2019-01-22 2020-01-17 深紫外発光素子用の反射電極の製造方法、深紫外発光素子の製造方法および深紫外発光素子
PCT/JP2020/001761 WO2020153308A1 (ja) 2019-01-22 2020-01-20 深紫外発光素子用の反射電極の製造方法、深紫外発光素子の製造方法および深紫外発光素子

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CN (1) CN113330586A (ja)
TW (1) TWI722784B (ja)

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WO2022091173A1 (ja) * 2020-10-26 2022-05-05 創光科学株式会社 窒化物半導体紫外線発光素子

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* Cited by examiner, † Cited by third party
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JP3631157B2 (ja) * 2001-03-21 2005-03-23 日本電信電話株式会社 紫外発光ダイオード
US7501295B2 (en) * 2006-05-25 2009-03-10 Philips Lumileds Lighting Company, Llc Method of fabricating a reflective electrode for a semiconductor light emitting device
KR101055090B1 (ko) * 2009-03-02 2011-08-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP4940363B1 (ja) * 2011-02-28 2012-05-30 株式会社東芝 半導体発光素子及び半導体発光装置
JP5601281B2 (ja) * 2011-05-30 2014-10-08 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
TWI467807B (zh) * 2011-10-28 2015-01-01 Rgb Consulting Co Ltd 覆晶式之發光二極體
JP6092961B2 (ja) * 2015-07-30 2017-03-08 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP6793815B2 (ja) * 2017-03-27 2020-12-02 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法

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JP6793863B2 (ja) 2020-12-02
JP2020120114A (ja) 2020-08-06
TWI722784B (zh) 2021-03-21
JP2020129697A (ja) 2020-08-27
TW202029523A (zh) 2020-08-01

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