CN113228317A - 发光二极管及其制造方法、发光二极管模组、显示设备 - Google Patents

发光二极管及其制造方法、发光二极管模组、显示设备 Download PDF

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Publication number
CN113228317A
CN113228317A CN201980004132.2A CN201980004132A CN113228317A CN 113228317 A CN113228317 A CN 113228317A CN 201980004132 A CN201980004132 A CN 201980004132A CN 113228317 A CN113228317 A CN 113228317A
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emitting diode
substrate
light
light emitting
micro light
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CN113228317B (zh
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洪温振
汪楷伦
许时渊
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

本发明提供了一种发光二极管的制造方法，所述方法包括：提供间隔形成于基板的若干微型发光二极管单元；将治具罩在所述基板上使所述若干微型发光二极管单元的发光部罩在所述治具和所述基板之间；向所述治具内侧注入熔融状阻光材料，且所述阻光材料填充于每一微型发光二极管单元的侧面与所述治具之间；将所述阻光材料固化以在所述微型发光二极管单元的侧面形成阻光层；以及在所述阻光材料固化后，取下所述治具。此外，本发明还提供一种发光二极管的制作方法、发光二极管模组、以及显示设备。微型发光二极管单元发光部的侧面包裹一层阻光层，可以减小相邻的红绿蓝三色发光二极管之间发光的颜色的相互影响，从而提升微型发光二极管显示屏的对比度以及显示效果。

Description

PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN201980004132.2A 2019-12-03 2019-12-03 发光二极管及其制造方法、发光二极管模组、显示设备 Active CN113228317B (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103258921A (zh) * 2012-02-21 2013-08-21 展晶科技(深圳)有限公司 发光二极管封装方法
CN104916763A (zh) * 2015-05-29 2015-09-16 广州市鸿利光电股份有限公司 一种芯片级封装led的封装方法
CN107331680A (zh) * 2017-07-05 2017-11-07 上海天马微电子有限公司 一种显示面板及其制造方法、显示装置
CN109830496A (zh) * 2018-11-16 2019-05-31 吴裕朝 发光模块封装制程
CN109844948A (zh) * 2017-10-12 2019-06-04 株式会社流明斯 显示器用发光二极管模块组件

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105006511A (zh) * 2015-07-29 2015-10-28 广州市鸿利光电股份有限公司 一种led封装方法
CN107768397B (zh) * 2017-10-20 2020-08-04 深圳市华星光电技术有限公司 器件阵列基板及其制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103258921A (zh) * 2012-02-21 2013-08-21 展晶科技(深圳)有限公司 发光二极管封装方法
CN104916763A (zh) * 2015-05-29 2015-09-16 广州市鸿利光电股份有限公司 一种芯片级封装led的封装方法
CN107331680A (zh) * 2017-07-05 2017-11-07 上海天马微电子有限公司 一种显示面板及其制造方法、显示装置
CN109844948A (zh) * 2017-10-12 2019-06-04 株式会社流明斯 显示器用发光二极管模块组件
CN109830496A (zh) * 2018-11-16 2019-05-31 吴裕朝 发光模块封装制程

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CN113228317B (zh) 2023-08-29
US20210376202A1 (en) 2021-12-02

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