CN113195699B - 洗涤剂组成物及利用其的洗涤方法 - Google Patents
洗涤剂组成物及利用其的洗涤方法 Download PDFInfo
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- CN113195699B CN113195699B CN201980084777.1A CN201980084777A CN113195699B CN 113195699 B CN113195699 B CN 113195699B CN 201980084777 A CN201980084777 A CN 201980084777A CN 113195699 B CN113195699 B CN 113195699B
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- acid
- detergent composition
- phosphate
- organic
- wafer
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- 239000000203 mixture Substances 0.000 title claims abstract description 68
- 239000003599 detergent Substances 0.000 title claims abstract description 59
- 238000005406 washing Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000005498 polishing Methods 0.000 claims abstract description 47
- 150000003839 salts Chemical class 0.000 claims abstract description 24
- 239000003945 anionic surfactant Substances 0.000 claims abstract description 21
- 239000002738 chelating agent Substances 0.000 claims abstract description 16
- -1 polyoxyethylene Polymers 0.000 claims description 60
- 230000007547 defect Effects 0.000 claims description 43
- 150000007524 organic acids Chemical class 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000000126 substance Substances 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 230000009467 reduction Effects 0.000 claims description 10
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 8
- 150000008055 alkyl aryl sulfonates Chemical class 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 7
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 6
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 6
- 229910000388 diammonium phosphate Inorganic materials 0.000 claims description 6
- 235000019838 diammonium phosphate Nutrition 0.000 claims description 6
- 235000013922 glutamic acid Nutrition 0.000 claims description 6
- 239000004220 glutamic acid Substances 0.000 claims description 6
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 6
- 229960002796 polystyrene sulfonate Drugs 0.000 claims description 6
- 239000011970 polystyrene sulfonate Substances 0.000 claims description 6
- 150000005215 alkyl ethers Chemical class 0.000 claims description 5
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 claims description 4
- 239000001099 ammonium carbonate Substances 0.000 claims description 4
- YXVFQADLFFNVDS-UHFFFAOYSA-N diammonium citrate Chemical compound [NH4+].[NH4+].[O-]C(=O)CC(O)(C(=O)O)CC([O-])=O YXVFQADLFFNVDS-UHFFFAOYSA-N 0.000 claims description 3
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000005695 Ammonium acetate Substances 0.000 claims description 2
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 claims description 2
- 235000019257 ammonium acetate Nutrition 0.000 claims description 2
- 229940043376 ammonium acetate Drugs 0.000 claims description 2
- 235000012538 ammonium bicarbonate Nutrition 0.000 claims description 2
- 235000012501 ammonium carbonate Nutrition 0.000 claims description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 2
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 6
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims 1
- 239000002002 slurry Substances 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 48
- 239000002253 acid Substances 0.000 description 45
- 229910019142 PO4 Inorganic materials 0.000 description 27
- 239000010408 film Substances 0.000 description 27
- 239000010452 phosphate Substances 0.000 description 27
- 239000002245 particle Substances 0.000 description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 18
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 14
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 13
- KQTIIICEAUMSDG-UHFFFAOYSA-N tricarballylic acid Chemical compound OC(=O)CC(C(O)=O)CC(O)=O KQTIIICEAUMSDG-UHFFFAOYSA-N 0.000 description 12
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 10
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 150000008051 alkyl sulfates Chemical class 0.000 description 8
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- YDSWCNNOKPMOTP-UHFFFAOYSA-N mellitic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(O)=O)=C(C(O)=O)C(C(O)=O)=C1C(O)=O YDSWCNNOKPMOTP-UHFFFAOYSA-N 0.000 description 8
- TXXHDPDFNKHHGW-UHFFFAOYSA-N muconic acid Chemical compound OC(=O)C=CC=CC(O)=O TXXHDPDFNKHHGW-UHFFFAOYSA-N 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 8
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 8
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 7
- 239000000356 contaminant Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 6
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 6
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 6
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 6
- 238000004377 microelectronic Methods 0.000 description 6
- FBUKVWPVBMHYJY-UHFFFAOYSA-N nonanoic acid Chemical compound CCCCCCCCC(O)=O FBUKVWPVBMHYJY-UHFFFAOYSA-N 0.000 description 6
- CMPQUABWPXYYSH-UHFFFAOYSA-N phenyl phosphate Chemical compound OP(O)(=O)OC1=CC=CC=C1 CMPQUABWPXYYSH-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 6
- 229910001868 water Inorganic materials 0.000 description 6
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 5
- 150000008052 alkyl sulfonates Chemical class 0.000 description 5
- 235000010323 ascorbic acid Nutrition 0.000 description 5
- 229960005070 ascorbic acid Drugs 0.000 description 5
- 239000011668 ascorbic acid Substances 0.000 description 5
- XVOUMQNXTGKGMA-OWOJBTEDSA-N (E)-glutaconic acid Chemical compound OC(=O)C\C=C\C(O)=O XVOUMQNXTGKGMA-OWOJBTEDSA-N 0.000 description 4
- ZYCMAPKFLBSECC-UHFFFAOYSA-N 2-cyanoethyl hydrogen carbonate Chemical compound OC(=O)OCCC#N ZYCMAPKFLBSECC-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 4
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-M Lactate Chemical compound CC(O)C([O-])=O JVTAAEKCZFNVCJ-UHFFFAOYSA-M 0.000 description 4
- TXXHDPDFNKHHGW-CCAGOZQPSA-N Muconic acid Natural products OC(=O)\C=C/C=C\C(O)=O TXXHDPDFNKHHGW-CCAGOZQPSA-N 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 4
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 4
- ZRIUUUJAJJNDSS-UHFFFAOYSA-N ammonium phosphates Chemical compound [NH4+].[NH4+].[NH4+].[O-]P([O-])([O-])=O ZRIUUUJAJJNDSS-UHFFFAOYSA-N 0.000 description 4
- 125000005228 aryl sulfonate group Chemical group 0.000 description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 4
- YTFJQDNGSQJFNA-UHFFFAOYSA-N benzyl dihydrogen phosphate Chemical compound OP(O)(=O)OCC1=CC=CC=C1 YTFJQDNGSQJFNA-UHFFFAOYSA-N 0.000 description 4
- BNMJSBUIDQYHIN-UHFFFAOYSA-N butyl dihydrogen phosphate Chemical compound CCCCOP(O)(O)=O BNMJSBUIDQYHIN-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- QLVWOKQMDLQXNN-UHFFFAOYSA-N dibutyl carbonate Chemical compound CCCCOC(=O)OCCCC QLVWOKQMDLQXNN-UHFFFAOYSA-N 0.000 description 4
- SYHPANJAVIEQQL-UHFFFAOYSA-N dicarboxy carbonate Chemical compound OC(=O)OC(=O)OC(O)=O SYHPANJAVIEQQL-UHFFFAOYSA-N 0.000 description 4
- XZMJPSTVHZJNLE-UHFFFAOYSA-N dioctadecyl carbonate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)OCCCCCCCCCCCCCCCCCC XZMJPSTVHZJNLE-UHFFFAOYSA-N 0.000 description 4
- 239000000174 gluconic acid Substances 0.000 description 4
- 235000012208 gluconic acid Nutrition 0.000 description 4
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 4
- ZUVCYFMOHFTGDM-UHFFFAOYSA-N hexadecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCCCCCOP(O)(O)=O ZUVCYFMOHFTGDM-UHFFFAOYSA-N 0.000 description 4
- 229940049920 malate Drugs 0.000 description 4
- YDKYIMZMZFEENX-UHFFFAOYSA-N octadecyl hydrogen carbonate Chemical compound CCCCCCCCCCCCCCCCCCOC(O)=O YDKYIMZMZFEENX-UHFFFAOYSA-N 0.000 description 4
- NVTPMUHPCAUGCB-UHFFFAOYSA-N pentyl dihydrogen phosphate Chemical compound CCCCCOP(O)(O)=O NVTPMUHPCAUGCB-UHFFFAOYSA-N 0.000 description 4
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 4
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 4
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 4
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 4
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 4
- 125000000542 sulfonic acid group Chemical group 0.000 description 4
- SZHOJFHSIKHZHA-UHFFFAOYSA-N tridecanoic acid Chemical compound CCCCCCCCCCCCC(O)=O SZHOJFHSIKHZHA-UHFFFAOYSA-N 0.000 description 4
- 239000004711 α-olefin Substances 0.000 description 4
- 239000005696 Diammonium phosphate Substances 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 3
- 125000005587 carbonate group Chemical group 0.000 description 3
- ZWRCDCXUOBLXKM-UHFFFAOYSA-N carbonic acid;morpholine Chemical compound OC([O-])=O.C1COCC[NH2+]1 ZWRCDCXUOBLXKM-UHFFFAOYSA-N 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- PIZLBWGMERQCOC-UHFFFAOYSA-N dibenzyl carbonate Chemical compound C=1C=CC=CC=1COC(=O)OCC1=CC=CC=C1 PIZLBWGMERQCOC-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- CQDGTJPVBWZJAZ-UHFFFAOYSA-N monoethyl carbonate Chemical compound CCOC(O)=O CQDGTJPVBWZJAZ-UHFFFAOYSA-N 0.000 description 3
- 239000003002 pH adjusting agent Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- SXFBQAMLJMDXOD-UHFFFAOYSA-N (+)-hydrogentartrate bitartrate salt Chemical compound OC(=O)C(O)C(O)C(O)=O.OC(=O)C(O)C(O)C(O)=O SXFBQAMLJMDXOD-UHFFFAOYSA-N 0.000 description 2
- ANFZPRAMCKRXAB-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;pentanedioic acid Chemical compound OC(=O)CCCC(O)=O.OC(=O)[C@@H](N)CCC(O)=O ANFZPRAMCKRXAB-DFWYDOINSA-N 0.000 description 2
- HOZBSSWDEKVXNO-BXRBKJIMSA-N (2s)-2-azanylbutanedioic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O.OC(=O)[C@@H](N)CC(O)=O HOZBSSWDEKVXNO-BXRBKJIMSA-N 0.000 description 2
- 239000001124 (E)-prop-1-ene-1,2,3-tricarboxylic acid Substances 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- STGNLGBPLOVYMA-TZKOHIRVSA-N (z)-but-2-enedioic acid Chemical compound OC(=O)\C=C/C(O)=O.OC(=O)\C=C/C(O)=O STGNLGBPLOVYMA-TZKOHIRVSA-N 0.000 description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-L 2-(carboxymethyl)-2-hydroxysuccinate Chemical compound [O-]C(=O)CC(O)(C(=O)O)CC([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-L 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- MSAHCLIFKYIZKK-UHFFFAOYSA-N 2-[2-[bis(2-phosphonoethyl)amino]ethyl-(2-phosphonoethyl)amino]ethylphosphonic acid Chemical compound OP(O)(=O)CCN(CCP(O)(O)=O)CCN(CCP(O)(O)=O)CCP(O)(O)=O MSAHCLIFKYIZKK-UHFFFAOYSA-N 0.000 description 2
- TWJNQYPJQDRXPH-UHFFFAOYSA-N 2-cyanobenzohydrazide Chemical compound NNC(=O)C1=CC=CC=C1C#N TWJNQYPJQDRXPH-UHFFFAOYSA-N 0.000 description 2
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 2
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 2
- DBNQHUPDRCGHOX-UHFFFAOYSA-N 2-nitrobenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1[N+]([O-])=O.OS(=O)(=O)C1=CC=CC=C1[N+]([O-])=O DBNQHUPDRCGHOX-UHFFFAOYSA-N 0.000 description 2
- HWKRAUXFMLQKLS-UHFFFAOYSA-N 2-oxidanylidenepropanoic acid Chemical compound CC(=O)C(O)=O.CC(=O)C(O)=O HWKRAUXFMLQKLS-UHFFFAOYSA-N 0.000 description 2
- KVZLHPXEUGJPAH-UHFFFAOYSA-N 2-oxidanylpropanoic acid Chemical compound CC(O)C(O)=O.CC(O)C(O)=O KVZLHPXEUGJPAH-UHFFFAOYSA-N 0.000 description 2
- YLTUHDKNZIVIJL-UHFFFAOYSA-N 2-phosphanylbutane-1,2,4-tricarboxylic acid Chemical compound OC(=O)CCC(P)(C(O)=O)CC(O)=O YLTUHDKNZIVIJL-UHFFFAOYSA-N 0.000 description 2
- SZHQPBJEOCHCKM-UHFFFAOYSA-N 2-phosphonobutane-1,2,4-tricarboxylic acid Chemical compound OC(=O)CCC(P(O)(O)=O)(C(O)=O)CC(O)=O SZHQPBJEOCHCKM-UHFFFAOYSA-N 0.000 description 2
- XLGCEXBHTYQZPV-UHFFFAOYSA-N 3-silylpropyl hydrogen carbonate Chemical compound C(COC(=O)O)C[SiH3] XLGCEXBHTYQZPV-UHFFFAOYSA-N 0.000 description 2
- ZBRHXPLCGARSAL-UHFFFAOYSA-N 3-triethoxysilylpropyl hydrogen carbonate Chemical compound CCO[Si](OCC)(OCC)CCCOC(O)=O ZBRHXPLCGARSAL-UHFFFAOYSA-N 0.000 description 2
- BNNMDMGPZUOOOE-UHFFFAOYSA-N 4-methylbenzenesulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1.CC1=CC=C(S(O)(=O)=O)C=C1 BNNMDMGPZUOOOE-UHFFFAOYSA-N 0.000 description 2
- 239000004135 Bone phosphate Substances 0.000 description 2
- SHEAHHRIFDHSRN-UHFFFAOYSA-N C(C(O)C(C(=O)O)CC(=O)O)(=O)O.OC(C(CC(=O)O)C(=O)O)C(=O)O.C(CC(O)(C(=O)O)CC(=O)O)(=O)O.OC(CC(=O)O)(CC(=O)O)C(=O)O Chemical compound C(C(O)C(C(=O)O)CC(=O)O)(=O)O.OC(C(CC(=O)O)C(=O)O)C(=O)O.C(CC(O)(C(=O)O)CC(=O)O)(=O)O.OC(CC(=O)O)(CC(=O)O)C(=O)O SHEAHHRIFDHSRN-UHFFFAOYSA-N 0.000 description 2
- AFSWKAFNXMGNHT-UHFFFAOYSA-N C1(=CC=CC=2C(C3=CC=CC=C3C(C12)=O)=O)S(=O)(=O)O.C1(=CC=CC=2C(C3=CC=CC=C3C(C12)=O)=O)S(=O)(=O)O Chemical compound C1(=CC=CC=2C(C3=CC=CC=C3C(C12)=O)=O)S(=O)(=O)O.C1(=CC=CC=2C(C3=CC=CC=C3C(C12)=O)=O)S(=O)(=O)O AFSWKAFNXMGNHT-UHFFFAOYSA-N 0.000 description 2
- QJSFUOBKBXVTMN-UHFFFAOYSA-N C=C.P(O)(O)=O Chemical compound C=C.P(O)(O)=O QJSFUOBKBXVTMN-UHFFFAOYSA-N 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N Caprylic acid Natural products CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 2
- 239000004471 Glycine Substances 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- 235000021360 Myristic acid Nutrition 0.000 description 2
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- IQNLJIQMOCLZJG-UHFFFAOYSA-N carboxy benzoate Chemical compound OC(=O)OC(=O)C1=CC=CC=C1 IQNLJIQMOCLZJG-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000009920 chelation Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
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- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 description 1
- 229940043276 diisopropanolamine Drugs 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
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- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
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- 239000011259 mixed solution Substances 0.000 description 1
- ZYWUVGFIXPNBDL-UHFFFAOYSA-N n,n-diisopropylaminoethanol Chemical compound CC(C)N(C(C)C)CCO ZYWUVGFIXPNBDL-UHFFFAOYSA-N 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- AGASEWKGZRRANY-UHFFFAOYSA-N triazanium 2-hydroxypropane-1,2,3-tricarboxylate 2-hydroxypropanoic acid Chemical compound C(C(O)C)(=O)O.C(CC(O)(C(=O)[O-])CC(=O)[O-])(=O)[O-].[NH4+].[NH4+].[NH4+] AGASEWKGZRRANY-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- YDQFYRJRIUKWCQ-UHFFFAOYSA-N undecan-2-yl hydrogen carbonate Chemical compound CCCCCCCCCC(C)OC(O)=O YDQFYRJRIUKWCQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/14—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aliphatic hydrocarbons or mono-alcohols
- C11D1/146—Sulfuric acid esters
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/34—Derivatives of acids of phosphorus
- C11D1/345—Phosphates or phosphites
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2093—Esters; Carbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/3409—Alkyl -, alkenyl -, cycloalkyl - or terpene sulfates or sulfonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
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Abstract
本发明涉及一种洗涤剂组成物及利用其的洗涤方法,根据本发明的一个实施方式的抛光浆料组成物包括:包括有机盐的螯合剂、以及阴离子性表面活性剂。
Description
技术领域
本发明涉及一种洗涤剂组成物,尤其涉及一种在对半导体设备用晶片进行化学机械抛光后,在洗涤过程之前的表面处理过程中使用的洗涤剂组成物及利用其的洗涤方法。
背景技术
微电子装置晶片用于形成集成电路。微电子装置晶片包括例如硅的晶片,在晶片内图案化有用于沉积具有绝缘性、导电性或半导电性等特性的不同物质的区域。为了正确执行图案化,应去除为在晶片上形成上述层而使用的过量物质。为制造具有功能性及可靠性的电路,在进入后续处理之前,制备平整或平坦的微电子晶片表面十分关键。由此,需要对微电子装置晶片的特定表面进行去除和/或抛光。
化学机械抛光(Chemical Mechanical Polishing;CMP)是一种抛光过程,用于去除微电子装置晶片表面的任意物质,并利用氧化或螯合化等化学制程与抛光等物理制程对表面进行抛光。在最基本的形态中,CMP将例如抛光剂及活性化合物溶液的浆料涂覆在抛光垫上,该抛光垫通过对微电子装置晶片的表面进行抛光,从而实现去除、平坦化及抛光过程。在集成电路的制造中,CMP浆料应首先能够去除包括与金属不同的其他物质的复合层的薄膜,由此生成高度平坦的表面,用于后续的光刻或图案化、蚀刻及薄膜处理。
一方面,为去除在制造半导体装置的过程中产生的颗粒、金属原子、有机物等污染,并提高装置的可靠性,需要经过洗涤过程。然而,对于在抛光后的洗涤过程中使用的洗涤剂组成物,因碱性水溶液中存在丰富的OH-能够使抛光粒子与晶片表面带电,由此,基于电性斥力容易地去除抛光粒子,但是,问题在于洗涤后无法有效去除晶片表面的金属污染物、有机残渣等杂质。并且,当洗涤剂组成物的pH为8以上时,碱性化合物的蚀刻作用容易导致晶片表面粗糙。因此,需要一种洗涤剂组成物,在最小化表面损伤的同时,有效去除残留粒子、有机污染物及金属污染物。
发明内容
技术问题
本发明的目的在于解决上述问题,提供一种洗涤剂组成物及利用其的洗涤方法,在对半导体设备用晶片进行化学机械抛光后的洗涤制程中,最小化表面损伤的同时,去除缺陷、残留粒子、有机污染物及金属污染物。
然而,本发明要解决的问题并非受限于上述言及的问题,未言及的其他问题将通过下面的记载由本领域普通技术人员所明确理解。
技术手段
根据本发明的一方面,提供一种洗涤剂组成物,包括:包括有机盐的螯合剂;及阴离子性表面活性剂。
根据一个实施方式,所述螯合剂能够包括从由羧基、碳酸基、磷酸基及硫酸基组成的群组中选择的至少一种的有机盐;或它们的铵盐。
根据一个实施方式,包括所述羧基的有机盐,能够包括从由醋酸盐(acetate)、柠檬酸盐(citrate)、柠檬酸氢(hydrogen citrate)、酒石酸盐(tartarate)、草酸盐(oxalate)、乳酸盐(lactate)、苯酸盐(benzonate)、甲酸盐(formate)、邻苯二甲酸酯(phthalate)及苹果酸盐(malate)组成的群组中选择的至少一种。
根据一个实施方式,包括所述碳酸基的有机盐,能够包括从由碳酸盐(carbonate)、重碳酸盐(bicarbonate)、三碳酸盐(tricarboante)、碳酸乙酯(ethylcarbonate)、2-氰乙基碳酸盐(2-cyanoethylcarbonate)、十八烷基碳酸盐(octadecylcarbonate)、二丁基碳酸盐(dibutylcarbonate)、双十八烷基碳酸盐(dioctadecylcarbonate)、甲基癸基碳酸盐(methyldecylcarbonate)、环己亚胺碳酸盐(hexamethylene iminecarbonate)、吗啉碳酸盐(mopholinium morpholinecarbonate)、苄基碳酸盐(benzylcarbonate)、三乙氧基甲硅烷基丙基碳酸盐(triethoxysilylpropylcarbonate)、吡啶重碳酸盐(pyridinium ethylhexylcarbonate)及碳酸氢三乙二铵(triethylene diaminium bicarbonate)组成的群组中选择的至少一种。
根据一个实施方式,包括所述磷酸基的有机盐,能够包括从由磷酸盐(phosphate)、磷酸氢盐(hydrogen phosphate)、磷酸氢二铵(diammonium hydrogenphosphate)、磷酸氢三铵(triammonium hydrogen phosphate)、磷酸单丁酯(monobutylphosphate)、磷酸单戊酯(monoamyl phosphate)、磷酸单壬酯(monononyl phosphate)、磷酸单鲸蜡酯(monocetyl phosphate)、磷酸单苯酯(monophenyl phosphate)及磷酸单苄酯(monobenzyl phosphate)组成的群组中选择的至少一种。
根据一个实施方式,包括所述硫酸基的有机盐,能够包括从由硫酸盐(sulfate)、烷基硫酸盐(alkyl sulfate)、聚氧乙烯芳基醚硫酸盐(polyoxyethylenearylethersulfate)、聚氧化烯烷基硫酸盐(polyoxyalkylene alkylsulfate)及聚氧化烯烷基苯硫酸盐(polyoxyalkylene alkylphenylsulfate)组成的群组中选择的至少一种。
根据一个实施方式,所述有机盐能够是所述洗涤剂组成物中的0.1重量%至10重量%。
根据一个实施方式,还包括:包括有机酸的辅助螯合剂,所述有机酸能够是所述洗涤剂组成物中的0.1重量%至10重量%。
根据一个实施方式,所述有机酸能够包括从由包括羧基的有机酸、包括磺基的有机酸及包括磷酸基的有机酸组成的群组中选择的至少一种。
根据一个实施方式,包括所述羧基的有机酸,能够包括从由苹果酸(malic acid)、丙二酸(malonic acid)、己二酸(adipic acid)、琥珀酸(succinic acid)、酒石酸(tartaric acid)、戊二酸(glutaric acid)、乙醇酸(glycollic acid)、天冬氨酸(aspartic acid)、衣康酸(Itaconic acid)、谷氨酸(glutamic acid)、丙三酸(tricarballylic acid)、庚二酸(pimelic acid)、辛二酸(suberic acid)、癸二酸(sebacic acid)、硬脂酸(stearic acid)、丙酮酸(pyruvic acid)、乙酰乙酸(acetoaceticacid)、乙醛酸(glyoxylic acid)、壬二酸(azelaic acid)、富马酸(fumaric acid)、戊烯二酸(glutaconic acid)、愈伤酸(traumatic acid)、粘康酸(muconic acid)、乌头酸(aconitic acid)、丙羧酸(carballylic acid)、三元酸(tribasic acid)、苯六甲酸(mellitic acid)、异柠檬酸(isocitric acid)、柠檬酸(citric acid)、乳酸(lacticacid)、葡萄糖酸(gluconic acid)、马来酸(maleic acid)、抗坏血酸(ascorbic acid)、亚氨基乙酸(iminoacetic acid)、草酸(oxalic acid)、焦没食子酸(pyrogallic acid)、甲酸(formic acid)、醋酸(acetic acid)、丙酸(propionic acid)、丁酸(butyric acid)、戊酸(valeric acid)、己酸(hexanoic acid)、庚酸(heptanoic acid)、辛酸(caprylic acid)、壬酸(nonanoic acid)、癸酸(decanoic acid)、十一烯酸(undecylenic acid)、月桂酸(lauric acid)、十三酸(tridecylic acid)、肉豆蔻酸(myristic acid)、十五烷酸(pentadecanoic acid)及棕榈酸(palmitic acid)组成的群组中选择的至少一种。
根据一个实施方式,包括所述磺基的有机酸,能够包括从由氨基磺酸(sulfamicacid)、对甲苯磺酸(p-toluenesulfonic acid)、聚苯乙烯磺酸(polystyrenesulfonicacid)、2-萘磺酸(2-naphthalene sulfonic acid)、十二烷基苯磺酸(dodecylbenezenesulfonic acid)、聚乙烯磺酸(polyvinylsulfonate)、蒽醌磺酸(anthraquinonesulfonic acid)、4-羟基苯磺酸(4-hydroxybenzenesulfonic acid)、甲基磺酸(methylsulfonic acid)及硝基苯磺酸(nitrobenzenesulfonic acid)组成的群组中选择的至少一种。
根据一个实施方式,包括所述磷酸基的有机酸,能够包括从由亚乙基膦酸、1-羟基亚乙基-1,1’-二膦酸(HEDPO)、1-羟基亚丙基-1,1’-二膦酸、1-羟基亚丁基-1,1’-二膦酸、乙氨基二(亚甲基膦酸)、十二烷基氨基二(亚甲基膦酸)、2-膦基-丁烷-1,2,4-三羧酸(2-phosphono-butane-1,2,4-tricarboxylic acid,PBTC)、氮基三(亚甲基膦酸)(NTPO)、乙二胺二(亚甲基膦酸)(EDDPO)、1,3-丙二胺二(亚甲基膦酸)、乙二胺四(亚甲基膦酸)(EDTPO)、乙二胺四(亚乙基膦酸)、1,3-丙二胺四(亚甲基膦酸)(PDTMP)、1,2-二氨基丙烷四(亚甲基膦酸)、1,6-六亚甲基二胺四(亚甲基膦酸)、己二胺四(亚甲基膦酸)、二亚乙基三胺五(亚甲基膦酸)(DEPPO)、二亚乙基三胺五(甲基膦酸)、N,N,N',N'-乙二胺四(亚甲基膦酸)、二亚乙基三胺五(亚乙基膦酸)、三亚乙基四胺六(亚甲基膦酸)及三亚乙基四胺六(亚乙基膦酸)组成的群组中选择的至少一种。
根据一个实施方式,所述阴离子性表面活性剂能够包括磺酸基或磷酸基。
根据一个实施方式,所述磺酸基的阴离子性表面活性剂,能够包括从由烷基芳基磺酸盐(alkyl aryl sulfonate)、烷基醚磺酸盐(alkyl ether sulfonate)、烷基磺酸盐(alkyl sulfonate)、芳基磺酸盐(aryl sulfonate)、聚苯乙烯磺酸盐(polystyrenesulfonate)、烷烃磺酸盐(alkanesulfonate)、α-烯烃磺酸盐(α-olefin sulfonate)、十二烷基苯磺酸盐(dodecylbenzenesulfonate)及烷基苯磺酸盐(alkylbenzene sulfonate)组成的群组中选择的至少一种。
根据一个实施方式,包括所述磷酸基的阴离子性表面活性剂,能够包括从由烷基芳基磷酸酯(alkyl aryl phosphate)、烷基醚磷酸酯(alkyl ether phosphate)、芳基醚磷酸酯(aryl ether phosphate)、烷基磷酸酯(alkyl phosphate)、芳基磷酸酯(arylphosphate)及苯磷酸酯(benzene phosphate)组成的群组中选择的至少一种。
根据一个实施形态,所述阴离子性表面活性剂能够是所述洗涤剂组成物中的0.1重量%至10重量%。
根据一个实施方式,所述洗涤剂组成物的pH能够是3至7。
根据一个实施方式,所述洗涤剂组成物用于对包括氮化硅膜、氧化硅膜或两者的半导体设备用晶片表面抛光后进行洗涤。
根据一个实施方式,当使用所述洗涤剂组成物洗涤时,对于氮化硅膜的缺陷减少率为75%以上,对于氧化硅膜的缺陷减少率为50%以上。
根据本发明的另一方面,提供一种洗涤方法,使用根据本发明的一方面的洗涤剂组成物对半导体设备用晶片的化学机械性抛光后,对半导体设备用晶片进行洗涤。
有益效果
根据本发明的一方面的洗涤剂组成物,在半导体设备用晶片的化学机械性抛光后的洗涤制程中,能够充分去除残留抛光粒子及表面缺陷(Defect)。并且,能够充分去除在对半导体晶片进行抛光后残留的有机物、杂质等污染物质。
根据本发明的另一方面的洗涤方法,在对半导体设备用晶片进行化学机械性抛光后的洗涤制程中,能够易于去除残留的抛光粒子及表面缺陷。
具体实施方式
下面将详细说明实施例。然而,能够对下面说明的实施例进行多种变更,本专利申请的权利范围并非受到下述实施例的限制与限定。应当理解,对实施例的全部更改、其等同物乃至其替代物均属于权利要求范围。
实施例中使用的术语仅用于说明特定实施例,并非用于限定实施例。在内容中没有特别说明的情况下,单数表达包括复数含义。在本说明书中,“包括”或者“具有”等术语用于表达存在说明书中所记载的特征、数字、步骤、操作、构成要素、配件或它们的组合,并不排除还具有或附加有一个或以上的其他特征、数字、步骤、操作、构成要素、配件或它们的组合。
在没有其他定义的情况下,包括技术或者科学术语在内的在此使用的全部术语,都具有本领域普通技术人员所理解的通常的含义。通常使用的与词典定义相同的术语,应理解为与相关技术的通常的内容相一致的含义,在本申请中没有明确言及的情况下,不能理想化或解释为过度形式上的含义。
在说明实施例的过程中,当判断对于相关公知技术的具体说明会不必要地混淆实施例时,省略对其详细说明。
下面,将参考实施例对本发明的洗涤剂组成物及利用其的洗涤方法进行具体说明。但本发明并非受限于实施例。
本发明的一方面提供一种洗涤剂组成物,包括:包括有机盐的螯合剂;及阴离子性表面活性剂。
根据本发明的一方面的洗涤剂组成物,在对半导体设备用晶片进行化学机械性抛光之后的洗涤制程中,能够容易地去除残留的抛光粒子及表面缺陷(Defect)。并且,能够充分去除对半导体晶片进行抛光后残留的有机物、杂质等污染物质。
根据一个实施方式,所述螯合剂用于防止金属对半导体设备用晶片造成的污染。通过利用螯合剂,存在于抛光浆料组成物中的金属离子与螯合剂发生反应,由此形成络离子,能够有效防止硅晶片表面的金属污染。例如,所述螯合剂与来自二氧化铈抛光粒子的铈离子发生反应形成络合物,能够容易地去除抛光粒子。
根据一个实施方式,所述螯合剂能够包括从由羧基、碳酸基、磷酸基及硫酸基组成的群组中选择的至少一种有机盐;或者它们的铵盐。所述有机盐能够有效提高去除半导体设备用晶片上的残留的抛光微粒、金属杂质等的效果。
根据一个实施方式,包括所述羧基的有机盐,能够包括从由醋酸盐(acetate)、柠檬酸盐(citrate)、柠檬酸氢(hydrogen citrate)、酒石酸盐(tartarate)、草酸盐(oxalate)、乳酸盐(lactate)、苯酸盐(benzonate)、甲酸盐(formate)、邻苯二甲酸酯(phthalate)及苹果酸盐(malate)组成的群组中选择的至少一种。
根据一个实施方式,包括所述碳酸基有机盐,能够包括从由碳酸盐(carbonate)、重碳酸盐(bicarbonate)、三碳酸盐(tricarboante)、碳酸乙酯(ethylcarbonate)、2-氰乙基碳酸盐(2-cyanoethylcarbonate)、十八烷基碳酸盐(octadecylcarbonate)、二丁基碳酸盐(dibutylcarbonate)、双十八烷基碳酸盐(dioctadecylcarbonate)、甲基癸基碳酸盐(methyldecylcarbonate)、环己亚胺碳酸盐(hexamethylene iminecarbonate)、吗啉碳酸盐(mopholinium morpholinecarbonate)、苄基碳酸盐(benzylcarbonate)、三乙氧基甲硅烷基丙基碳酸盐(triethoxy silylpropylcarbonate)、吡啶重碳酸盐(pyridiniumethylhexylcarbonate)及碳酸氢三乙二铵(triethylene diaminium bicarbonate)组成的群组中选择的至少一种。
根据一个实施方式,包括所述磷酸基的有机盐,能够包括从由磷酸盐(phosphate)、磷酸氢盐(hydrogen phosphate)、磷酸氢二铵(diammonium hydrogenphosphate)、磷酸氢三铵(triammonium hydrogen phosphate)、磷酸单丁酯(monobutylphosphate)、磷酸单戊酯(monoamyl phosphate)、磷酸单壬酯(monononyl phosphate)、磷酸单鲸蜡酯(monocetyl phosphate)、磷酸单苯酯(monophenyl phosphate)及磷酸单苄酯(monobenzyl phosphate)组成的群组中选择的至少一种。
根据一个实施方式,包括所述硫酸基的有机盐,能够包括从由硫酸盐(sulfate)、烷基硫酸盐(alkyl sulfate)、聚氧乙烯芳基醚硫酸盐(polyoxyethylenearylethersulfate)、聚氧化烯烷基硫酸盐(polyoxyalkylene alkylsulfate)及聚氧化烯烷基苯硫酸盐(polyoxyalkylene alkylphenylsulfate)组成的群组中选择的至少一种。
根据一个实施方式,所述铵盐是在所述有机盐中包括1个至3个铵基。
根据一个实施方式,所述有机盐能够是所述洗涤剂组成物中的0.1重量%至10重量%。当所述有机盐在所述洗涤剂组成物中不到0.1重量%时,会降低对抛光粒子进行螯合的功能;当超过10重量%时,过量添加的有机盐残留在晶片表面,会导致发生缺陷(Defect)等问题。
根据一个实施方式,为强化螯合功能,还具有包括有机酸的辅助螯合剂。
根据一个实施方式,所述有机酸具有将洗涤剂组成物保持为缓冲状态,从而确保稳定性能的功能。
根据一个实施方式,所述有机酸能够包括从由包括羧基的有机酸、包括磺基的有机酸及包括磷酸基的有机酸组成的群组中选择的至少一种。
根据一个实施方式,包括所述羧基的有机酸,能够包括从由苹果酸(malic acid)、丙二酸(malonic acid)、己二酸(adipic acid)、琥珀酸(succinic acid)、酒石酸(tartaric acid)、戊二酸(glutaric acid)、乙醇酸(glycollic acid)、天冬氨酸(aspartic acid)、衣康酸(Itaconic acid)、谷氨酸(glutamic acid)、丙三酸(tricarballylic acid)、庚二酸(pimelic acid)、辛二酸(suberic acid)、癸二酸(sebacic acid)、硬脂酸(stearic acid)、丙酮酸(pyruvic acid)、乙酰乙酸(acetoaceticacid)、乙醛酸(glyoxylic acid)、壬二酸(azelaic acid)、富马酸(fumaric acid)、戊烯二酸(glutaconic acid)、愈伤酸(traumatic acid)、粘康酸(muconic acid)、乌头酸(aconitic acid)、丙羧酸(carballylic acid)、三元酸(tribasic acid)、苯六甲酸(mellitic acid)、异柠檬酸(isocitric acid)、柠檬酸(citric acid)、乳酸(lacticacid)、葡萄糖酸(gluconic acid)、马来酸(maleic acid)、抗坏血酸(ascorbic acid)、亚氨基乙酸(iminoacetic acid)、草酸(oxalic acid)、焦没食子酸(pyrogallic acid)、甲酸(formic acid)、醋酸(acetic acid)、丙酸(propionic acid)、丁酸(butyric acid)、戊酸(valeric acid)、己酸(hexanoic acid)、庚酸(heptanoic acid)、辛酸(caprylic acid)、壬酸(nonanoic acid)、癸酸(decanoic acid)、十一烯酸(undecylenic acid)、月桂酸(lauric acid)、十三酸(tridecylic acid)、肉豆蔻酸(myristic acid)、十五烷酸(pentadecanoic acid)及棕榈酸(palmitic acid)组成的群组中选择的至少一种。
根据一个实施方式,包括所述磺基的有机酸,能够包括从由氨基磺酸(sulfamicacid)、对甲苯磺酸(p-toluenesulfonic acid)、聚苯乙烯磺酸(polystyrenesulfonicacid)、2-萘磺酸(2-naphthalene sulfonic acid)、十二烷基苯磺酸(dodecylbenezenesulfonic acid)、聚乙烯磺酸(polyvinylsulfonate)、蒽醌磺酸(anthraquinonesulfonic acid)、4-羟基苯磺酸(4-hydroxybenzenesulfonic acid)、甲基磺酸(methylsulfonic acid)及硝基苯磺酸(nitrobenzenesulfonic acid)组成的群组中选择的至少一种。
根据一个实施方式,包括所述磷酸基的有机酸,能够包括从由亚乙基膦酸、1-羟基亚乙基-1,1’-二膦酸(HEDPO)、1-羟基亚丙基-1,1’-二膦酸、1-羟基亚丁基-1,1’-二膦酸、乙氨基二(亚甲基膦酸)、十二烷基氨基二(亚甲基膦酸)、2-膦基-丁烷-1,2,4-三羧酸(2-phosphono-butane-1,2,4-tricarboxylic acid,PBTC)、氮基三(亚甲基膦酸)(NTPO)、乙二胺二(亚甲基膦酸)(EDDPO)、1,3-丙二胺二(亚甲基膦酸)、乙二胺四(亚甲基膦酸)(EDTPO)、乙二胺四(亚乙基膦酸)、1,3-丙二胺四(亚甲基膦酸)(PDTMP)、1,2-二氨基丙烷四(亚甲基膦酸)、1,6-六亚甲基二胺四(亚甲基膦酸)、己二胺四(亚甲基膦酸)、二亚乙基三胺五(亚甲基膦酸)(DEPPO)、二亚乙基三胺五(甲基膦酸)、N,N,N',N'-乙二胺四(亚甲基膦酸)、二亚乙基三胺五(亚乙基膦酸)、三亚乙基四胺六(亚甲基膦酸)及三亚乙基四胺六(亚乙基膦酸)组成的群组中选择的至少一种。
根据一个实施方式,所述有机酸是所述洗涤剂组成物中的0.1重量%至10重量%。当所述有机酸在所述洗涤剂组成物中不到0.1重量%时,会降低对抛光粒子进行螯合的功能,导致无法实现预期的去除残留抛光粒子的去除效果;当超过10重量%时,过量添加的有机酸残留在晶片表面,导致诱发缺陷(Defect)的问题。
根据一个实施方式,所述阴离子性表面活性剂,通过降低ζ-电位,利用电性附着于颗粒粒子的机制将粒子从基板上去除,并且,能够防止再次附着于基板表面,发挥优秀的洗涤效果。并且,尤其能够改善例如氮化硅膜、氧化硅膜等亲水性膜的洗涤及缺陷。
根据一个实施方式,所述阴离子性表面活性剂能够包括磺酸基或磷酸基。
根据一个实施方式,所述包括磺酸基的阴离子性表面活性剂,能够包括从由烷基芳基磺酸盐(alkyl aryl sulfonate)、烷基醚磺酸盐(alkyl ether sulfonate)、烷基磺酸盐(alkyl sulfonate)、芳基磺酸盐(aryl sulfonate)、聚苯乙烯磺酸盐(polystyrenesulfonate)、烷烃磺酸盐(alkanesulfonate)、α-烯烃磺酸盐(α-olefin sulfonate)、十二烷基苯磺酸盐(dodecylbenzenesulfonate)及烷基苯磺酸盐(alkylbenzene sulfonate)组成的群组中选择的至少一种。
根据一个实施方式,包括所述磷酸基的阴离子性表面活性剂,能够包括从由烷基芳基磷酸酯(alkyl aryl phosphate)、烷基醚磷酸酯(alkyl ether phosphate)、芳基醚磷酸酯(aryl ether phosphate)、烷基磷酸酯(alkyl phosphate)、芳基磷酸酯(arylphosphate)及苯磷酸酯(benzene phosphate)组成的群组中选择的至少一种。
根据一个实施方式,所述阴离子性表面活性剂还能够额外包括环氧乙烷或氧化丙烯。
根据一个实施方式,所述阴离子性表面活性剂是所述洗涤剂组成物中的0.1重量%至10重量%。当所述阴离子性表面活性剂在所述洗涤剂组成物中不到0.1重量%时,由于含量过少而无法充分吸附于颗粒粒子,无法电性去除粒子;当超过10重量%时,由于过量使用不会提高效果,在经济上不是优选方案,并且还可能残留在表面。
根据一个实施方式,所述洗涤剂组成物的pH能够是3至7。包括在所述pH范围内时,当使用所述洗涤剂组成物对完成化学机械性抛光的晶片进行处理时,能够在后续洗涤制程中提供优秀的洗涤效果并降低缺陷。此外,能够充分去除对半导体晶片进行抛光后残留的抛光粒子、有机物、杂质等污染物质。
根据一个实施方式,还能够包括pH调节剂。在本发明中,即使不具有pH调节剂也能够制备pH为3至7的洗涤剂组成物。
根据一个实施方式,所述pH调节剂能够包括烷基胺。
根据一个实施方式,所述pH调节剂能够包括从由单乙醇胺、二乙醇胺、三乙醇胺、单异丙醇胺、二异丙醇胺、三异丙醇胺、二甲基单乙醇胺、乙基二乙醇胺、二乙基单乙醇胺、甲基乙醇胺、乙基乙醇胺、N-氨基-N-丙醇、甲胺、二甲胺、三甲胺、乙胺、二乙胺、三乙胺、乙二胺、单乙醇胺、N-(β氨基乙基)乙醇胺、己二胺、二乙烯三胺、三乙烯四胺、四乙烯五胺、辛胺、十二烷胺、十六烷胺、2-氨基丙醇、2-(甲基苯基氨基)乙醇、2-(乙基苯基氨基)乙醇、2-氨基-1-丁醇、(二异丙基氨基)乙醇、2-二乙基氨基乙醇、4-氨基苯基氨基异丙醇及N-乙基氨基乙醇甲基二乙醇胺组成的群组中选择的至少一种。
根据一个实施方式,所述洗涤剂组成物包括溶剂,所述溶剂能够包括水和/或有机溶剂。洗涤剂组成物中的水起到溶解或分散洗涤剂组成物中的其他成分的作用。优选地,水中应尽量不含有影响其他成分的作用的杂质。具体地,优选使用利用离子交换树脂去除杂质离子后,通过过滤器去除杂质的离子交换水、纯水、超纯水、去离子水或蒸馏水。
根据一个实施方式,所述洗涤剂组成物是对包括氮化硅膜、氧化硅膜或两者的半导体设备用晶片表面抛光后进行洗涤。
根据一个实施方式,将使用现有的氢氟酸及SC1进行洗涤的晶片(氮化硅膜,氧化硅膜)的缺陷程度设置为100%并作为基准,此时,使用所述洗涤剂组成物进行洗涤后,对于氮化硅膜的缺陷水平相比基准为25%以下,对于氧化硅膜的缺陷水平相比基准为50%以下。
以缺陷减少率进行表示时,当以使用氢氟酸及SC1进行洗涤时的缺陷作为基准时,对于氮化硅膜的缺陷的缺陷减少率为75%以上;当以使用氢氟酸及SC1进行洗涤时的缺陷作为基准时,对于氧化硅膜的缺陷的缺陷减少率为50%以上。缺陷减少率作为一种指标,用于显示当使用现有的利用氢氟酸及SC1的洗涤剂组成物进行洗涤时产生的缺陷所减少的程度。所述SC1(Standard Cleaning 1)作为通常使用的洗涤剂,是指氨水、过氧化氢及水的混合洗涤液。
根据一个实施方式,所述残留物质包括从由来源于CMP抛光浆料的粒子、存在于CMP抛光浆料的化学物质、CMP抛光浆料的反应附属物、富碳颗粒、抛光垫粒子、刷子减载粒子、结构粒子的设备材料、金属、金属氧化物及它们的组和构成的群组中选择的物质。
本发明的另一方面提供一种洗涤方法,使用根据本发明的一方面的洗涤剂组成物对半导体设备用晶片进行化学机械性抛光后,对半导体设备用晶片进行洗涤。
根据一个实施方式,在与用于普通晶片的洗涤相同的装置及条件下,能够通过使所述洗涤剂组成物直接接触半导体设备用晶片进行洗涤。
根据一个实施方式,洗涤方法单独使用本发明的洗涤剂组成物,或者,混合本发明的洗涤剂组成物及氢氟酸(1%)进行使用。根据本发明的洗涤方法,相比使用现有的通常使用的氢氟酸及SC1洗涤液进行洗涤制程具有更好的效果。并且,无需进行现有的洗涤制程的最后一道硫酸-过氧化氢混合溶液(SPM,Surfuric Acid Peroxide Mixture)洗涤工序也能够获得优秀的洗涤效果,能够减少洗涤环节,具有经济上的优势。
根据本发明的一方面的洗涤方法,可以在对半导体设备用晶片进行化学机械性抛光后的洗涤制程中,容易地去除残留的抛光粒子及表面缺陷。
下面,参照下列实施例及比较例对本发明进行详细说明。但本发明的技术思想并非限定于此。
测量晶片缺陷(Defect)
利用包括直径为100nm的氧化铈作为抛光粒子的浆料组成物对氧化硅膜晶片及氮化硅膜晶片进行CMP抛光。对于抛光后的氧化硅膜晶片及氮化硅膜晶片,使用1%氢氟酸洗涤5秒,利用根据本发明的洗涤剂组成物,在每分钟1000ml条件下洗涤30秒。
完成洗涤后,利用去离子水(DIW)冲洗并进行干燥,之后,利用缺陷测量装置(KLA-Tencor公司)分别确认氧化硅膜晶片及氮化硅膜晶片的缺陷。
[缺陷评价标准]
将利用1%氢氟酸洗涤5秒后,利用SC1溶液洗涤30秒后分别测量的氮化硅膜晶片及氧化硅膜晶片的缺陷作为基准。
在此,SC1溶液使用氨、过氧化氢混合物(ammonia and hydrogen peroxidemixture;APM)(NH4OH:H2O2:H2O)。
氮化硅膜晶片的缺陷(≥53nm)为13,174个,氧化硅膜晶片的缺陷(≥63nm)为962个。
表1中示出了实施例1至实施例43中利用洗涤剂组成物进行洗涤时的缺陷相比使用氢氟酸(1%)与SC1进行洗涤时的缺陷的比率(%)。
实施例1至实施例43
利用下面表1记载的组成物制备实施例1至实施例43的洗涤剂组成物。
在下面的表1及表2中,对实施例1至实施例43的洗涤剂组成物的具体组成物及浓度进行了整理。下面的表3示出了在表1及表2中用数字表示的有机酸、有机盐及阴离子性表面活性剂的种类。
[表1]
[表2]
[表3]
编号 | 有机酸 | 有机盐 | 阴离子表面活性剂 |
1 | 抗坏血酸 | 醋酸铵 | 烷基芳基磺酸盐 |
2 | 柠檬酸 | 苯酸铵 | 烷基醚磺酸盐 |
3 | 谷氨酸 | 碳酸氢铵 | 烷基磺酸盐 |
4 | HEDPO | 碳酸铵 | 聚氧乙烯烷基芳基磺酸盐 |
5 | 乳酸 | 柠檬酸铵 | 烷基苯磺酸盐 |
6 | 马来酸 | 甲酸铵 | 聚氧乙烯芳基醚磷酸酯 |
7 | EDTPO | 柠檬酸氢铵 | 聚氧乙烯芳基醚硫酸盐 |
8 | 硝酸铵 | 聚苯乙烯磺酸盐 | |
9 | 硫酸铵 | ||
10 | 酒石酸铵 | ||
11 | 磷酸氢二铵 |
参照表1,在使用实施例1至实施例43的洗涤剂组成物进行洗涤时,相比基准,氮化硅膜的缺陷降低至不到25%,氧化硅膜的缺陷降低至不到50%。
本发明使用包括螯合剂及阴离子性表面活性剂的洗涤剂组成物对完成CMP的晶片表面进行洗涤,能够容易地去除CMP后发生的缺陷及残留物质。
综上,对实施例进行了说明,本领域普通技术人员能够基于所述记载进行多种更改与变形。例如,所说明的技术按照与说明的方法不同的顺序执行,和/或所说明的构成要素按照与说明的方法不同的形态进行结合或组合,或者由其他构成要素或者等同物置换或代替,也能得到适当的结果。
由此,其它体现,其它实施例以及权利要求范围的等同物,均属于本发明的权利要求范围。
Claims (7)
1.一种洗涤剂组成物,包括:
包括有机盐的螯合剂;
阴离子性表面活性剂;以及
包括有机酸的辅助螯合剂,
其中,所述螯合剂包括从由醋酸铵、碳酸氢铵、碳酸铵、柠檬酸铵、柠檬酸氢铵、硫酸铵和磷酸氢二铵组成的群组中选择的至少一种有机盐,
其中,所述阴离子性表面活性剂包括烷基芳基磺酸盐、烷基醚磺酸盐、聚氧乙烯烷基芳基磺酸盐或聚苯乙烯磺酸盐,
其中,所述辅助螯合剂包括柠檬酸或者柠檬酸与谷氨酸、1-羟基亚乙基-1,1’-二膦酸(HEDPO)或乙二胺四(亚甲基膦酸)(EDTPO)的组合,
其中,所述洗涤剂组成物的pH是3至7。
2.根据权利要求1所述的洗涤剂组成物,其中,所述有机盐是所述洗涤剂组成物中的0.1重量%至10重量%。
3.根据权利要求1所述的洗涤剂组成物,
其中,所述有机酸是所述洗涤剂组成物中的0.1重量%至10重量%。
4.根据权利要求1所述的洗涤剂组成物,其中,所述阴离子性表面活性剂是所述洗涤剂组成物中的0.1重量%至10重量%。
5.根据权利要求1所述的洗涤剂组成物,其中,所述洗涤剂组成物是对包括氮化硅膜、氧化硅膜或两者的半导体设备用晶片表面抛光后进行洗涤。
6.根据权利要求5所述的洗涤剂组成物,其中,当使用所述洗涤剂组成物进行洗涤时,对于氮化硅膜的缺陷减少率为75%以上,对于氧化硅膜的缺陷减少率为50%以上。
7.一种洗涤方法,包括使用权利要求1所述的洗涤剂组成物对半导体设备用晶片进行化学机械性抛光后,对半导体设备用晶片进行洗涤。
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