CN113130466A - LED display module and manufacturing method thereof - Google Patents

LED display module and manufacturing method thereof Download PDF

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Publication number
CN113130466A
CN113130466A CN202110324377.2A CN202110324377A CN113130466A CN 113130466 A CN113130466 A CN 113130466A CN 202110324377 A CN202110324377 A CN 202110324377A CN 113130466 A CN113130466 A CN 113130466A
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China
Prior art keywords
substrate
adhesive layer
led
display module
led display
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CN202110324377.2A
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Chinese (zh)
Inventor
张汉春
江忠永
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Hangzhou Multi Color Optoelectronics Co ltd
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Hangzhou Multi Color Optoelectronics Co ltd
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Priority to CN202110324377.2A priority Critical patent/CN113130466A/en
Publication of CN113130466A publication Critical patent/CN113130466A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/005Processes relating to semiconductor body packages relating to encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0058Processes relating to semiconductor body packages relating to optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

The application discloses LED display module assembly includes: a substrate; the LED chips are positioned on the first surface of the substrate and are electrically connected with the substrate; the packaging adhesive layer is positioned on the first surface of the substrate and covers each LED chip; the black optical film is positioned on the packaging adhesive layer; the packaging adhesive layer is white colloid and is used for preventing light crosstalk among the LED chips. The application also discloses a manufacturing method of the LED display module, and the encapsulation glue layer formed by curing after mixing the silicon dioxide and the transparent glue is adopted to prevent the pixel crosstalk, and melanin is not required to be added, so that the pixel crosstalk can be prevented, the brightness of the LED display module can be ensured, and the overall power consumption of the LED display module and the LED display screen is reduced.

Description

LED display module and manufacturing method thereof
Technical Field
The invention relates to the technical field of LEDs, in particular to an LED display module and a manufacturing method thereof.
Background
In recent years, LED (Light-Emitting Diode) displays are moving toward high resolution, which makes the number of pixels per unit area increasing. The conventional smd (surface Mounted devices) LED device adopts a patch method to assemble an LED display screen, so that the current requirement of high resolution display cannot be met. Specifically, as the devices are smaller, the packaging accuracy and difficulty of a single chip are increased, and the corresponding cost is increased; and as the number of patches increases in geometric order of magnitude, the assembly efficiency becomes lower and lower; when the pixel pitch is smaller, especially when the dot pitch is below 800um, the difficulty of the paster process is higher and higher, and the cost of the paster is higher and higher; after the small-spacing SMD device patches are formed into a module, the edge of the module is very easily damaged by extrusion and friction in the installation and transportation processes, so that the maintenance cost of the small-spacing LED display screen is sharply increased.
Therefore, for the LED display screen with fine pitch (P0.8 or less), the development trend is cob (chip On board) integrated package. On one hand, the COB LED display module can be used as an independent display unit and applied to mobile phones, vehicle-mounted display and wearable display equipment; on the other hand, the accessible concatenation COB LED display module assembly obtains the LED display screen, like the LED TV.
The LED display module mainly comprises a PCB substrate, an LED chip, a driving electronic device and a packaging adhesive layer. In order to prevent crosstalk between pixels, a black pigment is generally added to the encapsulation layer. In order to eliminate the color difference between different LED display modules and make the surfaces of the LED display modules more consistent, some manufacturers have used a method of attaching a transparent film or a unidirectional reflective film to the surface of the encapsulation adhesive layer. However, the brightness of the LED chip is reduced by adding the melanin into the packaging adhesive layer, and in order to achieve a required brightness value, the current needs to be increased, which may increase the overall power consumption of the LED display screen; in addition, if the thickness consistency of the packaging adhesive layer is not good, the brightness difference between the LED chips is large, and the display effect of the LED display screen is poor.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide an LED display module and a method for manufacturing the same, which can prevent crosstalk between pixels, and simultaneously ensure consistency of surface topography of the LED display module, thereby finally realizing seamless assembly of the LED display module and ensuring excellent consistency of the surface of the LED display screen.
According to an aspect of the present invention, there is provided an LED display module, including: a substrate; the LED chips are positioned on the first surface of the substrate and are electrically connected with the substrate; the packaging adhesive layer is positioned on the first surface of the substrate and covers each LED chip; the black optical film is positioned on the packaging adhesive layer; the packaging adhesive layer is white colloid and is used for preventing light crosstalk among the LED chips.
Preferably, an isolation structure is not additionally arranged between the adjacent LED chips except for the packaging adhesive layer.
Preferably, the encapsulation glue layer is formed by mixing silicon dioxide and transparent glue and then curing.
Preferably, the content of silicon dioxide in the packaging adhesive layer is 5% -80%.
Preferably, the material of the transparent glue comprises at least one of epoxy resin, silicone resin and silica gel.
Preferably, the light transmittance of the packaging adhesive layer is 70% -90%.
Preferably, the thickness of the packaging adhesive layer above the LED chip is 50-300 μm.
Preferably, the LED display module further includes: and the black optical film is positioned on the packaging adhesive layer.
Preferably, the black optical film and the packaging adhesive layer are bonded together through a transparent adhesive.
Preferably, one surface of the black optical film, which is far away from the packaging adhesive layer, is a matte surface or a frosted surface.
Preferably, the thickness of the black optical film is 0.05mm to 0.3 mm.
Preferably, the LED display module further includes: the control chip and the electronic device are positioned on the second surface of the substrate or the first surface of the substrate and are electrically connected with each LED chip through the substrate, wherein the second surface of the substrate is opposite to the first surface.
Preferably, the substrate is a PCB board or a glass board.
Preferably, the LED chip is a flip LED chip, and the color of the LED chip includes one, two or three combinations of red, green and blue.
According to another aspect of the present invention, a method for manufacturing an LED display module is provided, which includes: fixing a plurality of LED chips on a first surface of a substrate, and electrically connecting each LED chip with the substrate; forming a packaging adhesive layer on the first surface of the substrate, wherein the packaging adhesive layer covers each LED chip; forming a black optical film on the packaging adhesive layer; the packaging adhesive layer is white colloid and is used for preventing light crosstalk among the LED chips.
Preferably, an isolation structure is not additionally arranged between the adjacent LED chips except for the packaging adhesive layer.
Preferably, the encapsulation glue layer is formed by mixing silicon dioxide and transparent glue and then curing.
Preferably, the forming of the encapsulation adhesive layer on the first surface of the substrate includes: fixing the substrate fixed with the plurality of LED chips on a jig of injection molding equipment; injecting a mixture of transparent glue water and silicon dioxide into the jig to cover each LED chip, and heating and curing to form white glue; and separating the substrate and the white colloid on the substrate from the jig, and carrying out long curing treatment on the white colloid to form a packaging adhesive layer.
Preferably, the content of silicon dioxide in the packaging adhesive layer is 5% -80%.
Preferably, the heating curing temperature is 100-180 ℃; the temperature of the long curing treatment is 100-180 ℃.
Preferably, the material of the transparent glue comprises at least one of epoxy resin, silicone resin and silica gel.
Preferably, the light transmittance of the packaging adhesive layer is 70% -90%.
Preferably, the manufacturing method further comprises: and carrying out planarization treatment on the surface of the packaging adhesive layer to ensure that the surface of the packaging adhesive layer is flat.
Preferably, the thickness of the packaging adhesive layer above the LED chip is 50-300 μm.
Preferably, the manufacturing method further comprises: and forming a black optical film on the packaging adhesive layer.
Preferably, the step of forming a black optical film on the encapsulation adhesive layer includes: coating a transparent adhesive on the surface of the packaging glue layer after the planarization treatment; placing the black optical film on the adhesive; and curing the adhesive.
Preferably, the step of forming a black optical film on the encapsulation adhesive layer includes: coating a transparent adhesive on the surface of the black optical film; placing the black optical film coated with the adhesive on the surface of the packaging glue layer after the planarization treatment, wherein the surface of the black optical film coated with the adhesive faces the packaging glue layer; and curing the adhesive.
Preferably, the method of curing the adhesive comprises: heat curing, UV curing, and room temperature curing.
Preferably, the manufacturing method further comprises: and performing matte treatment or frosting treatment on the surface of the black optical film.
Preferably, the thickness of the black optical film is 0.05mm to 0.3 mm.
Preferably, the manufacturing method further comprises: and fixing a control chip and an electronic device on the second surface of the substrate or in the substrate, wherein the control chip and the electronic device are electrically connected with each LED chip through the substrate, and the second surface of the substrate is opposite to the first surface.
Preferably, the substrate is a PCB board or a glass board.
Preferably, the LED chip is a flip-chip LED chip, and the color of the LED chip includes one, two or three combinations of red, green and blue.
According to the LED display module and the manufacturing method thereof, the encapsulation glue layer formed by mixing and curing the silicon dioxide and the transparent glue is adopted to prevent the pixel crosstalk, and no melanin is added, so that the pixel crosstalk can be prevented, the brightness of the LED display module can be ensured, and the overall power consumption of the LED display module and the LED display screen is reduced. In addition, an isolation structure is not required to be additionally arranged between the adjacent LED chips, and the effect of light cross prevention can be achieved only through the packaging adhesive layer.
Further, the surface of the packaging adhesive layer is subjected to planarization treatment, so that the surface of the packaging adhesive layer is flat, the consistency of the surface appearance of the LED display module is ensured, and the mosaic phenomenon of the LED display module caused by the height difference of the packaging colloid is solved. The thickness of the packaging adhesive layer of the LED display module is thin, and the light transmittance can be improved.
Furthermore, a black optical film is pasted on the packaging adhesive layer, and the surface of the black optical film is subjected to matte treatment or frosted treatment, so that light reflection can be prevented, the wear resistance is high, and scratching is prevented.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings.
FIG. 1 is a schematic structural diagram of an LED display module according to an embodiment of the invention;
fig. 2a to 2d are schematic flow charts illustrating a method for manufacturing an LED display module according to an embodiment of the invention.
Detailed Description
Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by the same or similar reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale.
The present invention may be embodied in various forms, some examples of which are described below.
Fig. 1 shows a schematic structural diagram of an LED display module according to an embodiment of the present invention. As shown in fig. 1, the LED display module 100 includes a substrate 110, a plurality of LED chips 120, a packaging adhesive layer 130, a black optical film 140, and a control chip and an electronic device 150.
The substrate 110 has a first surface and a second surface opposite to each other. The substrate 110 is a PCB board or a glass board.
The plurality of LED chips 120 are uniformly disposed on the first surface of the substrate 110 and electrically connected to the substrate 110. The LED chip 120 is a flip LED chip. The color of the LED chip comprises one, two or three combinations of red, green and blue. The design is designed according to the functional requirements of the actual product, and is not limited herein. Therefore, the LED display module provided by the invention can cover the design of LED display modules for various display screens (single-color, double-color and full-color screens).
The flip-chip LED chip is electrically connected to the substrate 110 through a conductive adhesive layer. Specifically, a conductive adhesive layer is disposed on the substrate 110, and the flip LED chip is disposed on the conductive adhesive layer. The electrode setting of flip-chip LED chip is at the back of going out the plain noodles, promptly the electrode orientation of flip-chip LED chip the base plate 110 sets up, consequently, through set up on the base plate 110 the conductive adhesive layer will the flip-chip LED chip sets up on the conductive adhesive layer, can make electrode on the flip-chip LED chip with base plate 110 electric connection. Further, the conductive paste is, for example, but not limited to, one of silver paste or solder paste.
In another implementation manner of this embodiment, the flip-chip LED chip is electrically connected to the substrate 110 through a eutectic soldering process. The eutectic welding process does not need to adopt other conductive structures, and only needs to directly weld the electrodes of the flip LED chip and the electrodes of the substrate 110 together, so that the use of materials is reduced, and the cost is saved.
The encapsulation adhesive layer 130 is located on the first surface of the substrate 110, and covers each of the LED chips 120, so as to isolate the LED chips 120 from the outside.
In this embodiment, the encapsulation adhesive layer 130 is a white colloid formed by mixing silicon dioxide and transparent glue and then curing. The material of the transparent glue can be, but is not limited to, one or a combination of epoxy resin, silica gel and silicone resin. Wherein, the content of the silicon dioxide is 5 to 80 percent. The light transmittance of the packaging adhesive layer 130 is 70% to 90%.
The content of the silicon dioxide in the packaging adhesive layer 130 is too small to influence light, so that the effect of preventing light crosstalk is not achieved; too large a content of silicon dioxide has a great influence on the properties of the transparent glue.
Specifically, the substrate 110 with the plurality of LED chips 120 fixed thereon is fixed on a jig of the injection molding apparatus, the LED chips 120 face upward, and a film cavity of the injection molding apparatus is closed and evacuated. And injecting a mixture of silicon dioxide and transparent glue into the jig, covering each LED chip 120, heating and curing to form white colloid, wherein the heating and curing temperature is 100-180 ℃, and the curing time is 1-8 min. And separating the substrate 110 and the white colloid on the substrate 110 from the jig, and then putting the substrate into an oven for baking for long curing treatment, wherein the temperature of the long curing treatment is 100-180 ℃, and the long curing time is 60-240 min.
Further, the packaging adhesive layer 130 is planarized, for example, the surface of the packaging adhesive layer 130 is polished, so that the thickness of the packaging adhesive layer 130 on the surface of the LED chip 120 is uniform, and the thickness of the packaging adhesive layer 130 on the surface of the polished LED chip 120 is 50 μm to 300 μm. The thickness of the packaging adhesive layer 130 of the LED display module is thin, so that the light transmittance can be improved.
In the LED package module of the prior art, black pixels are generally added in the package glue layer 130 to prevent crosstalk of pixels, but the brightness of the LED display module is reduced. In the embodiment of the invention, the encapsulation adhesive layer 130 formed by mixing and curing the silicon dioxide and the transparent glue is adopted to prevent the pixel crosstalk without adding melanin, so that the pixel crosstalk can be prevented, the brightness of the LED display module can be ensured, and the overall power consumption of the LED display module and the LED display screen is reduced. In addition, an isolation structure is not required to be additionally arranged between the adjacent LED chips, and light cross-talk prevention can be realized only through the packaging adhesive layer.
The black optical film 140 is located on the packaging adhesive layer 130. The black optical film 140 and the encapsulating adhesive layer 130 are bonded together by a transparent adhesive. The surface of the black optical film 140 away from the encapsulation adhesive layer 130 is a matte surface or a frosted surface. The surface of the black optical film 140 is a matte surface or a frosted surface, which can prevent reflection of light, and has high wear resistance and scratch resistance. The thickness of the black optical film 140 is 0.05 to 0.3 mm.
The control chip and electronics 150 are electrically connected with each of the plurality of LED chips 120 through the substrate 110. In the present embodiment, the control chip and the electronic device 150 are located on the second surface of the substrate 110. In some other embodiments, the control chip and the electronic device 150 may also be located on the first surface (not shown) of the substrate 110.
According to the embodiment of the invention, the LED display module adopts the packaging adhesive layer formed by mixing and curing the silicon dioxide and the transparent glue, so that the brightness of the LED display module can be ensured while pixel crosstalk is prevented; the surface of the packaging adhesive layer is flat, the surface consistency of the LED display module is good, and the mosaic phenomenon of the LED display module caused by the height difference of the packaging adhesive can be solved; and the thickness of the packaging adhesive layer on the LED chip is thinner, and the light transmittance is high.
Furthermore, the surface of the black optical film is a matte surface or a frosted surface, so that light reflection can be prevented, the wear resistance is high, and scratching is prevented.
Fig. 2a, fig. 2b, fig. 2c and fig. 2d are schematic flow charts illustrating a method for manufacturing an LED display module according to an embodiment of the present invention. As shown in the figure, the method for manufacturing the LED display module according to the embodiment of the invention includes the following steps.
Referring to fig. 2a, a plurality of LED chips 120 are flip-chip mounted on a first surface of a substrate 110 and each of the LED chips is electrically connected to the substrate.
Referring to fig. 2b, an encapsulation adhesive layer 130 is formed on the first surface of the substrate 110, and the encapsulation adhesive layer 130 covers each of the LED chips 120. The encapsulation adhesive layer 130 is formed by mixing silicon dioxide and transparent glue and then curing.
Specifically, the substrate 110 fixed with the plurality of LED chips 120 is fixed on a jig of the injection molding equipment, the LED chips 120 face upward, and a film cavity of the injection molding equipment is closed and vacuumized; injecting a mixture of silicon dioxide and transparent glue into the jig to cover each LED chip 120, and heating and curing to form white colloid, wherein the heating and curing temperature is 100-180 ℃, and the curing time is 1-8 min; and separating the substrate 110 and the white colloid on the substrate 110 from the jig, and then putting the substrate 110 and the white colloid into an oven to bake to carry out long curing treatment on the white colloid to form the packaging adhesive layer 130, wherein the temperature of the long curing treatment is 100-180 ℃, and the long curing time is 60-240 min.
In this embodiment, the material of the transparent glue may be, but is not limited to, one or a combination of epoxy resin, silica gel, and silicone resin. Wherein, the content of the silicon dioxide is 5 to 80 percent. The light transmittance of the packaging adhesive layer 130 is 70% to 90%.
Further, before forming the encapsulation glue layer, the method further comprises the following steps: fixing a control chip and an electronic device 150 on a second surface of the substrate 110 or a first surface of the substrate 110, wherein the control chip and the electronic device 150 are electrically connected with each of the LED chips 120 through the substrate 110, and the second surface of the substrate 110 is opposite to the first surface. When the substrate 110 is placed on the jig, the jig has a groove for accommodating the control chip and the electronic device 150, thereby preventing the control chip and the electronic device 150 from being crushed.
Referring to fig. 2c, the surface of the encapsulation adhesive layer 130 is planarized to make the surface of the encapsulation adhesive layer 130 flat.
In this embodiment, the surface of the encapsulation adhesive layer 130 is ground, so as to ensure the consistency of the surface topography of the LED module, and solve the mosaic phenomenon of the LED display module caused by the height difference of the encapsulation adhesive 130. The thickness of the packaging adhesive layer 130 on the LED chip 120 is 50-300 μm, and the thickness of the packaging adhesive layer 130 of the LED display module is thin, so that the light transmittance can be improved.
Referring to fig. 2d, a black optical film 140 is formed on the encapsulation adhesive layer 130.
In the present embodiment, the step of forming the black optical film 140 includes: coating a transparent adhesive on the surface of the packaging adhesive layer 130 after the planarization treatment; placing the black optical film 140 on the adhesive; and curing the adhesive.
In another preferred embodiment, the step of forming the black optical film 140 includes: coating a transparent adhesive on the surface of the black optical film 140; placing the black optical film coated with the adhesive on the surface of the planarized encapsulation adhesive layer 130, wherein the surface of the black optical film coated with the adhesive faces the encapsulation adhesive layer; and curing the adhesive.
Wherein the method of curing the adhesive comprises: heat curing, UV curing, and room temperature curing. Clear adhesives include oca (optical Clear adhesive) optical glues. The curing time is 1-5 min.
Further, before the black optical film 140 is bonded to the encapsulating adhesive layer 130, the surface of the black optical film 140 is matte or frosted, so that reflection of light can be prevented, and the black optical film has high wear resistance and is prevented from scratching.
According to the embodiment of the invention, the pixel crosstalk is prevented by adopting the packaging adhesive layer formed by mixing and curing the silicon dioxide and the transparent glue without adding melanin, so that the pixel crosstalk can be prevented, the brightness of the LED display module can be ensured, and the overall power consumption of the display screen is reduced. And planarizing the surface of the packaging adhesive layer to ensure that the surface of the packaging adhesive layer is flat, so that the consistency of the surface appearance of the LED display module is ensured, and the mosaic phenomenon of the LED display module caused by the height difference of the packaging adhesive is solved.
The LED display module can be used for an LED display screen, and the LED display screen can be an LED display screen using the LED display module, so that pixel crosstalk can be prevented, and the brightness of the LED display module can be ensured, so that the overall power consumption of the LED display module and the LED display screen is reduced; because the surface consistency of the LED display module is good, the LED display screen also has good surface consistency.
While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.

Claims (31)

1. The utility model provides a LED display module assembly which characterized in that includes:
a substrate;
the LED chips are positioned on the first surface of the substrate and are electrically connected with the substrate;
the packaging adhesive layer is positioned on the first surface of the substrate and covers each LED chip;
the black optical film is positioned on the packaging adhesive layer;
the packaging adhesive layer is white colloid and is used for preventing light crosstalk among the LED chips.
2. The LED display module of claim 1, wherein no isolation structures are additionally disposed between adjacent LED chips except for the encapsulant layer.
3. The LED display module of claim 1, wherein the encapsulation adhesive layer is formed by mixing silicon dioxide and transparent glue and then curing.
4. The LED display module of claim 3, wherein the silica content in the encapsulant layer is between 5% and 80%.
5. The LED display module of claim 3, wherein the material of the transparent glue comprises at least one of epoxy, silicone, and silicone.
6. The LED display module of claim 1, wherein the light transmittance of the encapsulant layer is 70-90%.
7. The LED display module of claim 1, wherein the thickness of the encapsulation adhesive layer above the LED chip is 50-300 μm.
8. The LED display module of claim 1, wherein the black optical film and the encapsulant layer are bonded together by a transparent adhesive.
9. The LED display module of claim 1, wherein a side of the black optical film away from the encapsulant layer is a matte side or a frosted side.
10. The LED display module of claim 1, wherein the thickness of the black optical film is 0.05mm-0.3 mm.
11. The LED display module of claim 1, further comprising:
the control chip and the electronic device are positioned on the second surface of the substrate or the first surface of the substrate and are electrically connected with each LED chip through the substrate, wherein the second surface of the substrate is opposite to the first surface.
12. The LED display module of claim 1, wherein the substrate is a PCB board or a glass board.
13. The LED display module of claim 1, wherein the LED chip is a flip-chip LED chip, and the color of the LED chip comprises one, two or three of red, green and blue.
14. A manufacturing method of an LED display module is characterized by comprising the following steps:
fixing a plurality of LED chips on a first surface of a substrate, and electrically connecting each LED chip with the substrate;
forming a packaging adhesive layer on the first surface of the substrate, wherein the packaging adhesive layer covers each LED chip;
forming a black optical film on the packaging adhesive layer;
the packaging adhesive layer is white colloid and is used for preventing light crosstalk among the LED chips.
15. The manufacturing method of claim 14, wherein no isolation structure is additionally arranged between adjacent LED chips except for the packaging adhesive layer.
16. The method of claim 14, wherein the encapsulation adhesive layer is formed by mixing silicon dioxide and transparent glue and then curing the mixture.
17. The method of claim 16, wherein forming the encapsulation adhesive layer on the first surface of the substrate comprises:
fixing the substrate fixed with the plurality of LED chips on a jig of injection molding equipment;
injecting a mixture of transparent glue water and silicon dioxide into the jig to cover each LED chip, and heating and curing to form white glue;
and separating the substrate and the white colloid on the substrate from the jig, and carrying out long curing treatment on the white colloid to form a packaging adhesive layer.
18. The method according to claim 16, wherein the content of the silicon dioxide in the encapsulating adhesive layer is 5% to 80%.
19. The method of claim 17, wherein the heat curing temperature is 100 ℃ to 180 ℃; the temperature of the long curing treatment is 100-180 ℃.
20. The method of claim 16, wherein the transparent glue is at least one of epoxy, silicone and silicone.
21. The method for manufacturing a light-emitting diode package structure according to claim 14, wherein the light transmittance of the packaging adhesive layer is 70% to 90%.
22. The method of manufacturing according to claim 14, further comprising, before forming the black optical film on the encapsulating adhesive layer:
and carrying out planarization treatment on the surface of the packaging adhesive layer to ensure that the surface of the packaging adhesive layer is flat.
23. The method of claim 14, wherein the thickness of the encapsulant layer over the LED chip is 50 μm to 300 μm.
24. The method of claim 22, wherein the step of forming the black optical film on the encapsulating adhesive layer comprises:
coating a transparent adhesive on the surface of the packaging glue layer after the planarization treatment;
placing the black optical film on the adhesive;
and curing the adhesive.
25. The method of claim 22, wherein the step of forming the black optical film on the encapsulating adhesive layer comprises:
coating a transparent adhesive on the surface of the black optical film;
placing the black optical film coated with the adhesive on the surface of the packaging glue layer after the planarization treatment, wherein the surface of the black optical film coated with the adhesive faces the packaging glue layer;
and curing the adhesive.
26. The method of manufacturing of claim 24 or 25, wherein the method of curing the adhesive comprises: heat curing, UV curing, and room temperature curing.
27. The method of manufacturing according to claim 14, further comprising:
and performing matte treatment or frosting treatment on the surface of the black optical film.
28. The method of claim 14, wherein the thickness of the black optical film is 0.05mm to 0.3 mm.
29. The method of manufacturing according to claim 14, further comprising:
fixing a control chip and an electronic device on the second surface of the substrate or in the substrate, wherein the control chip and the electronic device are electrically connected with each LED chip through the substrate,
wherein the second surface of the substrate is opposite to the first surface.
30. The method of manufacturing of claim 29, wherein the substrate is a PCB board or a glass board.
31. The manufacturing method of claim 14, wherein the LED chip is a flip-chip LED chip, and the color of the LED chip includes one, two or three of red, green and blue.
CN202110324377.2A 2021-03-26 2021-03-26 LED display module and manufacturing method thereof Pending CN113130466A (en)

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