CN1130601C - 通过反常色散改变折射率的底面抗反射涂层 - Google Patents
通过反常色散改变折射率的底面抗反射涂层 Download PDFInfo
- Publication number
- CN1130601C CN1130601C CN97192868A CN97192868A CN1130601C CN 1130601 C CN1130601 C CN 1130601C CN 97192868 A CN97192868 A CN 97192868A CN 97192868 A CN97192868 A CN 97192868A CN 1130601 C CN1130601 C CN 1130601C
- Authority
- CN
- China
- Prior art keywords
- refractive index
- reflective film
- photoresist film
- film
- real part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1300996P | 1996-03-07 | 1996-03-07 | |
US60/013,009 | 1996-03-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1213437A CN1213437A (zh) | 1999-04-07 |
CN1130601C true CN1130601C (zh) | 2003-12-10 |
Family
ID=21757845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN97192868A Expired - Lifetime CN1130601C (zh) | 1996-03-07 | 1997-03-06 | 通过反常色散改变折射率的底面抗反射涂层 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6042992A (zh) |
EP (1) | EP0885407B1 (zh) |
JP (2) | JP3877776B2 (zh) |
KR (1) | KR100500499B1 (zh) |
CN (1) | CN1130601C (zh) |
DE (1) | DE69706288T2 (zh) |
TW (1) | TW394850B (zh) |
WO (1) | WO1997033201A1 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5733714A (en) * | 1996-09-30 | 1998-03-31 | Clariant Finance (Bvi) Limited | Antireflective coating for photoresist compositions |
US6274295B1 (en) * | 1997-03-06 | 2001-08-14 | Clariant Finance (Bvi) Limited | Light-absorbing antireflective layers with improved performance due to refractive index optimization |
US5981145A (en) * | 1997-04-30 | 1999-11-09 | Clariant Finance (Bvi) Limited | Light absorbing polymers |
US5994430A (en) * | 1997-04-30 | 1999-11-30 | Clariant Finance Bvi) Limited | Antireflective coating compositions for photoresist compositions and use thereof |
EP1016930A1 (en) * | 1998-12-28 | 2000-07-05 | Infineon Technologies North America Corp. | Bottom antireflective layer operating in destructive interference and absorption modes |
US6599682B2 (en) * | 2000-04-26 | 2003-07-29 | Tokyo Ohka Kogyo Co., Ltd. | Method for forming a finely patterned photoresist layer |
US7070914B2 (en) * | 2002-01-09 | 2006-07-04 | Az Electronic Materials Usa Corp. | Process for producing an image using a first minimum bottom antireflective coating composition |
US7009750B1 (en) | 2002-10-25 | 2006-03-07 | Eclipse Energy Systems, Inc. | Apparatus and methods for modulating refractive index |
EP1868036B1 (en) * | 2006-06-14 | 2010-09-22 | Eastman Kodak Company | Method for processing of photopolymer printing plates with overcoat |
US7416834B2 (en) * | 2006-09-27 | 2008-08-26 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US8221965B2 (en) * | 2008-07-08 | 2012-07-17 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US8329387B2 (en) * | 2008-07-08 | 2012-12-11 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US20100092894A1 (en) * | 2008-10-14 | 2010-04-15 | Weihong Liu | Bottom Antireflective Coating Compositions |
US8507192B2 (en) * | 2010-02-18 | 2013-08-13 | Az Electronic Materials Usa Corp. | Antireflective compositions and methods of using same |
US9170494B2 (en) | 2012-06-19 | 2015-10-27 | Az Electronic Materials (Luxembourg) S.A.R.L. | Antireflective compositions and methods of using same |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5851515A (ja) * | 1981-09-22 | 1983-03-26 | Fujitsu Ltd | レジスト膜の露光方法 |
DE3211400A1 (de) * | 1982-03-27 | 1983-09-29 | Basf Ag, 6700 Ludwigshafen | Polymere mit mesogenen gruppen und farbstoffresten in den seitenketten |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
US5207952A (en) * | 1986-10-10 | 1993-05-04 | University Of Southern Mississippi | Side chain liquid crystalline polymers as nonlinear optical materials |
JPS63202915A (ja) * | 1987-02-19 | 1988-08-22 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
DE3817012A1 (de) * | 1988-05-19 | 1989-11-30 | Basf Ag | Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern |
DE69125634T2 (de) * | 1990-01-30 | 1998-01-02 | Wako Pure Chem Ind Ltd | Chemisch verstärktes Photolack-Material |
FR2668158B1 (fr) * | 1990-10-22 | 1994-05-06 | Thomson Csf | Polymere reticulable pour applications en optique non lineaire. |
SG43691A1 (en) * | 1991-06-28 | 1997-11-14 | Ibm | Top antireflective coating films |
US5472827A (en) * | 1991-12-30 | 1995-12-05 | Sony Corporation | Method of forming a resist pattern using an anti-reflective layer |
JP2791525B2 (ja) * | 1992-04-16 | 1998-08-27 | 三菱電機株式会社 | 反射防止膜の選定方法およびその方法により選定された反射防止膜 |
US5294680A (en) * | 1992-07-24 | 1994-03-15 | International Business Machines Corporation | Polymeric dyes for antireflective coatings |
JP2829555B2 (ja) * | 1992-08-20 | 1998-11-25 | 三菱電機株式会社 | 微細レジストパターンの形成方法 |
DE4232394A1 (de) * | 1992-09-26 | 1994-03-31 | Basf Ag | Copolymerisate mit nichtlinear optischen Eigenschaften und deren Verwendung |
JP3727335B2 (ja) * | 1992-11-25 | 2005-12-14 | Azエレクトロニックマテリアルズ株式会社 | フォトレジスト用底部反射防止塗料における金属イオンの低減 |
US5656128A (en) * | 1993-03-26 | 1997-08-12 | Fujitsu Limited | Reduction of reflection by amorphous carbon |
FR2709755B1 (fr) * | 1993-09-06 | 1995-11-17 | France Telecom | Matériau polymère réticulable, utilisable en optique non linéaire, et son procédé d'obtention. |
EP0723677B1 (en) * | 1993-10-12 | 2000-03-22 | Clariant Finance (BVI) Limited | Top anti-reflective coating films |
JP3334304B2 (ja) * | 1993-11-30 | 2002-10-15 | ソニー株式会社 | 半導体装置の製造方法 |
KR100366910B1 (ko) * | 1994-04-05 | 2003-03-04 | 소니 가부시끼 가이샤 | 반도체장치의제조방법 |
JP3248353B2 (ja) * | 1994-06-29 | 2002-01-21 | ソニー株式会社 | 反射防止膜の設計方法 |
US5525457A (en) * | 1994-12-09 | 1996-06-11 | Japan Synthetic Rubber Co., Ltd. | Reflection preventing film and process for forming resist pattern using the same |
CN1091264C (zh) * | 1996-03-07 | 2002-09-18 | 克拉里安装国际有限公司 | 由于折射率最优化得到的具有改进了性能的光吸收防反射涂层 |
US5652297A (en) * | 1996-08-16 | 1997-07-29 | Hoechst Celanese Corporation | Aqueous antireflective coatings for photoresist compositions |
US5652317A (en) * | 1996-08-16 | 1997-07-29 | Hoechst Celanese Corporation | Antireflective coatings for photoresist compositions |
-
1997
- 1997-03-06 EP EP97915003A patent/EP0885407B1/en not_active Expired - Lifetime
- 1997-03-06 WO PCT/US1997/003835 patent/WO1997033201A1/en active IP Right Grant
- 1997-03-06 KR KR10-1998-0706195A patent/KR100500499B1/ko not_active IP Right Cessation
- 1997-03-06 DE DE69706288T patent/DE69706288T2/de not_active Expired - Lifetime
- 1997-03-06 JP JP53200997A patent/JP3877776B2/ja not_active Expired - Fee Related
- 1997-03-06 CN CN97192868A patent/CN1130601C/zh not_active Expired - Lifetime
- 1997-03-06 US US08/811,806 patent/US6042992A/en not_active Expired - Lifetime
- 1997-03-06 TW TW086102746A patent/TW394850B/zh not_active IP Right Cessation
-
2006
- 2006-05-08 JP JP2006129460A patent/JP4044118B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4044118B2 (ja) | 2008-02-06 |
EP0885407B1 (en) | 2001-08-22 |
JP2000506288A (ja) | 2000-05-23 |
KR19990082462A (ko) | 1999-11-25 |
DE69706288T2 (de) | 2002-05-16 |
CN1213437A (zh) | 1999-04-07 |
JP3877776B2 (ja) | 2007-02-07 |
JP2006287243A (ja) | 2006-10-19 |
EP0885407A1 (en) | 1998-12-23 |
KR100500499B1 (ko) | 2005-12-30 |
US6042992A (en) | 2000-03-28 |
DE69706288D1 (de) | 2001-09-27 |
TW394850B (en) | 2000-06-21 |
WO1997033201A1 (en) | 1997-09-12 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: AZ ELECTRONIC MATERIALS JAPAN Free format text: FORMER OWNER: CLARIANT INTERNATIONAL LTD. Effective date: 20050812 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20050812 Address after: Tokyo, Japan Patentee after: AZ Electronic Materials Japan Co., Ltd. Address before: Swiss Moose Patentee before: Keralyant International Co., Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: AZ ELECTRONIC MATERIALS IP CO., LTD. Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS JAPAN CO., LTD. Effective date: 20120926 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120926 Address after: Tokyo, Japan Patentee after: AZ Electronic Materials IP Co., Ltd. Address before: Tokyo, Japan Patentee before: AZ Electronic Materials Japan Co., Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: MERCK PATENT GMBH Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS IP CO., LTD. Effective date: 20150414 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150414 Address after: Darmstadt Patentee after: Merck Patent GmbH Address before: Tokyo, Japan Patentee before: AZ Electronic Materials IP Co., Ltd. |
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CX01 | Expiry of patent term |
Granted publication date: 20031210 |
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CX01 | Expiry of patent term |